Q -/ 五、發明说明（/) 發明領域= 本發明係與一種半導體製程有關，特別是有關於一種 半導體製程中，減少非曝光區光阻溶解之光阻處理方法。 發明背景= 半導體製程技術的快速發展與演變，其目標即在於持 續的增加積體電路元件的積集度，而提昇7件的積集度的 關鍵手段之一，即在於半導體製程圖案化（Patterning)製程 中的微影製程（lithography) 3以目前微影製程發展的狀況而 言，其可著手進行的主要方向包括光阻處理的程序、光阻 材料的選用及開發、曝光源的變換、光罩的研發及各種光 學的對準方法等。 經濟部中央標準局貝工消費合作社印製 (請先閎讀背面之注意事項再填寫本頁〕 -1! 隨著對半導體元件的密度要求日益提高’半導體技術 的發展方向正朝著次微米、甚至是深次微米的目標邁進。 微影製程曝光源使用的曝光源也從g-Hne(波長4360A°)、 i-line(波長 3650A。），逐漸縮小至深紫外線（deep ultra violet ； DUV ;波長2480A。）。同時為解決在如此短的波長 及高密度排列的元件下，產生光學繞射效應所導致的問 題，開發了所謂的相位轉移式光罩（phase shifting mask) ’ 以適用於更小的元件尺寸，且成為目前高積集度微影技術 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210xz97^y~ — ^2 004 3 ^ A， B7 五、發明説明（2 ) 所採用的主要方法之一。 (請先閱讀背面之注意事項再填杇本貢) 通常在相位轉移式光罩，是以形成一具有半透光特性 的相位轉移層或相位轉移區域於光罩上，利用光的干涉效 應來減低繞射效應，以提昇微影製程的解像力。參見第一 圖，一光罩1 〇經曝光源照射，其產生至光阻層上的光強度 分布之理想曲線為如曲線1 2，而繞射效應使得產生至光阻 層上的光強度分布會如曲線14所示，在非圖案區14a產生 一光線入射量，導致微影製程的失效。在使用一相位轉移 式光罩後，其光強度分布會如曲線16所示，提供較佳的圖 案再現性，但是仍會在非圖案區1 6 a產生一較微量的光線 入射量，此微量的光線入射量會於不形成圖案之區域形成 複數個非嗶光區潛像，並於其後的光阻中處理反應，導致 非嗔光區溶解效應（side lobe effect)，而形成如第二圖所 示，完成微影製程後的光阻層圖案，在光阻圖案18之外， 於非圖案區產生一非囌光區溶解18a，使得所需的圖案無法 正確的形成，因此限制了半導體製程所能達到的積集度 (packing density)。 經濟部中央標準局員工消費合作社印製 法光改光 方曝來式 決量，移 解射性轉 的入異位 中線差相 程光比變 ^ 對改 統不是由 傳對或藉 ，其同是 題用不或 問彳的外 的#力另 解，能； 溶阻收應 區光吸效 光的劑的 嗓同制解 非不抑溶 此發解區 對開溶光 針由對嘬 藉，非 是後善 本紙張尺度適用中國國家標準（CNS ) Λ4規格（2)0X297公釐） 一斗 經濟部中央標準局員工消費合作社印繁 Λ 7 Β7五、發明説明（3 ) 罩的設計，來稍微減輕非嘬光區潛像的形成。但是非嗔光 區溶解的現象仍無法完全的消除，而影響微影製程中圖案 定義的解析能力與再現性，使積集度無法提昇。 發明目的及概述： 本發明的目的為提供一種減少非曝光區光阻溶解之方 法。 本發明的另一目的為提供一種減少非曝光區溶解之光 阻處理方法，能減少非曝光區的溶解，以提昇微影製程中 圖案定義的再現性。 本發明的另一目的為提供一種減少非曝光區溶解的光 阻處理方法，以提昇半導體元件的積集度。 減少非曝光區光阻溶解之光阻處理方法，包含首先提 供一半導體基材，半導體基材包含已進行一曝光之一光阻 層形成於半導體基材上方，此光阻層内有複數個非曝光區 潛像，非曝光區潛像係於對光阻層進行曝光時形成。接著 形成一溶解抑制層於光阻層上方，再對半導體基材進行一 曝光後烘烤：之後對光阻層進行一顯影，以形成一圖案化 之光阻，溶解抑制層係用以於進行顯影時，抑制複數個非 _______:__:______Γ T______免 I -5 Λ -I _ _ - (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標辛（CNS ) Λ4規格（210X297公釐）-^ 經濟部中央標準局員工消費合作社印製 B7五、發明説明（+ ) 曝光區潛像之溶解，提昇微影製程中光阻圖案的準確度及 光罩圖案轉移的再現性。 藉由溶解抑制層的形成，會使非曝光區潛像在進行顯 影時形成一抑制溶解的效果，減少非曝光區溶解的效應， 甚至可完全消除，於非曝光區不會有任何圖案遭到溶解的 破壞，而使光罩上的圖案能完整而正確的轉移至光阻層 上，於微影製程後將精確的圖案再現。且由於本發明中的 方法在製程上容易配合、成本亦低、且對量產速度影響極 小，完成微影製程後，光阻層圖案可正確的形成*因此提 昇了半導體製程所能達到的積集度。 圖式簡單說明： 第一圖為一光罩與三種不同曝光強度分布的示意圖。 第二圊為一使用傳統方法下，包含非曝光區溶解之光阻圊 案的示意圖。 第三圖顯示傳統方法中微影製程的流程圖。 第四圖顯示本發明中微影製程的流程圖。 第五圖為一使用本發明中的光阻處理方法下，消除了非曝 光區溶解效應之光阻圖案的示意圖。 發明詳細說明： I - - - - - ----J__- _ . : - .1 . 1-1----- 丁 n _ _ n - -..... .1 I -τ *· • - (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS) Λ4規格（2丨0X297公釐） —ί一 420^43Q-/ V. Description of the invention (/) Field of the invention = The present invention relates to a semiconductor process, and in particular, it relates to a photoresist treatment method for reducing photoresist dissolution in non-exposed areas in a semiconductor process. Background of the Invention = The rapid development and evolution of semiconductor process technology, its goal is to continuously increase the integration degree of integrated circuit components, and one of the key means to increase the integration degree of 7 pieces is to pattern the semiconductor process (Patterning ) Lithography in the process 3 In terms of the current state of the development of lithography, the main directions that it can proceed include the process of photoresist processing, selection and development of photoresist materials, conversion of exposure sources, light R & D of masks and various optical alignment methods. Printed by the Shell Standard Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) -1! As the density requirements for semiconductor devices are increasing, the development of semiconductor technology is moving towards sub-micron, Even the goal of deep sub-micron progress. The exposure source used by the lithography process exposure source is also gradually reduced from g-Hne (wavelength 4360A °), i-line (wavelength 3650A.) To deep ultra violet (DUV; DUV; The wavelength is 2480A.) At the same time, in order to solve the problem caused by the optical diffraction effect under such a short wavelength and high-density arrayed components, a so-called phase shifting mask ("phase shifting mask") has been developed to apply to more Small component size, and it has become the current high-integration lithography technology. The paper size is applicable to the Chinese National Standard (CNS) Λ4 specification (210xz97 ^ y ~ — ^ 2 004 3 ^ A, B7. V. Description of the invention (2) One of the main methods. (Please read the precautions on the back before filling in Ben Gong.) Generally, a phase-shifting mask is used to form a phase-shifting layer or phase-shifting region with semi-transmissive properties. On the photomask, the interference effect of light is used to reduce the diffraction effect to improve the resolution of the lithography process. See the first figure, a photomask 10 is irradiated by an exposure source, and it generates the light intensity distribution on the photoresist layer. The ideal curve is as curve 12, and the diffraction effect causes the light intensity distribution to the photoresist layer to be as shown in curve 14, which generates an incident amount of light in the non-patterned region 14a, resulting in the failure of the lithography process. After using a phase-shifting photomask, its light intensity distribution will be as shown in curve 16 to provide better pattern reproducibility, but it will still produce a relatively small amount of light incident in the non-pattern area 16a. The amount of incident light will form a plurality of latent images in the non-beep area in the non-patterned area, and then process the reaction in the subsequent photoresist, resulting in a side lobe effect in the non-calendar area. As shown, the photoresist layer pattern after the photolithography process is completed, in addition to the photoresist pattern 18, a non-Sodium photodissolved region 18a is generated in the non-patterned area, so that the required pattern cannot be formed correctly, thus limiting the semiconductor process Reach The packing density of the Central Consumers Bureau of the Ministry of Economic Affairs, the Consumer Cooperatives ’printing method, and the light-to-light side are exposed to the amount of exposure. It ’s not by right or borrowing. It ’s the same problem. You can use the external force to solve the problem. It can solve the problem. The dichroic solution is borrowed by the counterparty. The paper size is not applicable to Chinese national standards (CNS) Λ4 specifications (2) 0X297 mm. Yin Duo, Central Consumers Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, India Fan Λ 7 Β7 V. Description of the invention (3) The cover is designed to slightly reduce the formation of latent images in the non-calendar area. However, the phenomenon of dissolution in non-calendar areas cannot be completely eliminated, which affects the resolution and reproducibility of the pattern definition in the lithography process, so that the accumulation degree cannot be improved. Object and Summary of the Invention: The object of the present invention is to provide a method for reducing the dissolution of photoresist in non-exposed areas. Another object of the present invention is to provide a photoresist processing method for reducing the dissolution of non-exposed areas, which can reduce the dissolution of non-exposed areas, so as to improve the reproducibility of pattern definition in the lithography process. Another object of the present invention is to provide a photoresist processing method for reducing dissolution in non-exposed areas, so as to improve the accumulation degree of semiconductor devices. A photoresist processing method for reducing photoresist dissolution in a non-exposed area includes firstly providing a semiconductor substrate, the semiconductor substrate including a photoresist layer that has been subjected to an exposure is formed on the semiconductor substrate, and a plurality of non- The latent image in the exposed area and the latent image in the non-exposed area are formed when the photoresist layer is exposed. Next, a dissolution inhibiting layer is formed over the photoresist layer, and then the semiconductor substrate is subjected to a post-exposure bake: after that, the photoresist layer is developed to form a patterned photoresist, and the dissolution inhibiting layer is used for During development, suppress multiple non -_______: __: ______ Γ T______ free I -5 Λ -I _ _-(Please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard Xin (CNS) Λ4 Specifications (210X297 mm)-^ Printed by the Consumers Cooperative of the Central Standards Bureau, Ministry of Economic Affairs, B7. V. Description of the invention (+) Dissolution of the latent image in the exposure area, which improves the accuracy of the photoresist pattern in the lithography process and the transfer of the mask pattern Reproducibility. With the formation of the dissolution inhibiting layer, the latent image of the non-exposed area can form a dissolution inhibiting effect during development, reduce the effect of dissolution of the non-exposed area, and can even be completely eliminated. There will be no pattern in the non-exposed area. Dissolution and destruction, so that the pattern on the photomask can be completely and correctly transferred to the photoresist layer, and the accurate pattern is reproduced after the lithography process. And because the method of the present invention is easy to coordinate in the manufacturing process, the cost is low, and the impact on the mass production speed is very small, after the lithography process is completed, the photoresist layer pattern can be correctly formed *, thus increasing the product that can be achieved by the semiconductor process Set degree. Brief description of the figure: The first figure is a schematic diagram of a photomask and three different exposure intensity distributions. The second example is a schematic diagram of a photoresist solution including dissolution of non-exposed areas using a conventional method. The third figure shows a flowchart of the lithography process in the conventional method. The fourth figure shows a flowchart of the lithography process in the present invention. The fifth figure is a schematic diagram of a photoresist pattern in which the dissolution effect of the non-exposed area is eliminated by using the photoresist processing method in the present invention. Detailed description of the invention: I--------- J __- _.:-.1. 1-1 ----- 丁 n _ _ n--..... .1 I -τ * · •-(Please read the notes on the back before filling out this page) The paper size applies to the Chinese National Standard (CNS) Λ4 specification (2 丨 0X297 mm) — ί 420 ^ 43
AT Β· 五、發明説明（亡） 本發明改變了光阻曝光後的處理過程，並加入一形成 溶解抑制層的步驟’形成於曝光後的光阻上，溶解抑制層 的形成’可抑制複數個非曝光區潛像於後續的光阻處理過 程中的溶解》藉由本發明中之方法，減低非曝光區溶解的 效應，增加微影製程圖案的正確度，進一步提高積體電路 的積集度。 經濟部中央榡準局員工消費合作社印製 —般而言，微影製程中形成一圖案化之光阻層 大致可包含數個步驟。參見第三圖所示，首先提供 髏基材，基材上可包含一廣至數層須進行圖案定義 案化層’基材經過一光阻塗蓋步驟形成一光阻 圖案化層的上方；接著進行一預烤程序2 〇〇，以加熱 離光阻層中的溶劑，增加光阻層的附著能力；並對 方的光阻層進行一曝光300,利用一光源透過一光罩 阻層’例如使用一深紫外光做為光源，透過一相位 光罩將圖案轉移並曝光，以形成所需圖案之潛像於 上，之後使半導體基材通過一曝光後供烤步驟4〇〇, 供烤4〇〇的功能會因所使用的光阻種類不同而有不 用’將於後文中詳述；最後藉由一顯影程序5〇〇,溶 的光卩且層，例如以一正光阻而言，即是溶去光阻層 光的部分，以形成所需的圖案於光阻層上。 的程序一半導 的未圖 層於未 蒸發驅 基材上 照射光 轉移式 光阻層 曝光後 同的效 解部分 中已曝 -----.----乂-----Γ 訂 J------1^ I : - 墨 - (請先閡讀背面之注意事項再填寫本頁〕 f 本.氏張尺反通用中國圉家標準（CNS ) Λ4規格（210X 297公漦） 一 經濟部中央標隼局員工消費合作社印製 4 2 0 8 4 3 B"五、發明説明（沴） 以目前商業化使用的光阻而言，可依其曝光及溶解反 應特性的不同而分成兩大類，在以下說明甲分別以第一類 光阻及第二類光阻代表之。 第一類光阻即是早期傳統製程中最常使用的光阻，第 一類光阻一般多由高分子或是類似的材質構成，第一類光 阻在曝光時即產生光化學反應，造成其曝光區及非曝光區 中内部分子間鏈結及溶解性的改變。因此對此類光阻而 言，曝光後烘烤400對圖案的影響有限，一般的功能如使 用於消除曝光後光阻層中較小的缺陷，例如用以消除駐波 (standing waves)效應所造成的缺陷等。 第二類光阻的受光及溶解特性與第一類光阻有所不 同，一般而言第二類光阻在受光時產生光化學反應形成潛 像後，於曝光後烘烤4 0 0的過程中始產生如分子間鏈結的 變化，及曝光區與非曝光區溶解性的改變等，因此在光阻 曝光步驟300後及曝光後烘烤400之前的處理，即可藉由 處理程序的不同來進一步改變光阻層上所定義圖案的特 性。第二類光阻的一個例子，即是目前在使用相位轉移式 光罩進行微影製程時，所經常應用的化學放大光阻 (chemically amplified photoresist)。 在不限制本發明的精神下，本實施例中，應用一上述 -- - f[ t ί I I _ _ _ n n __ _ I 丁！^_ ) _ 气 i -9Λ -- _ - I (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29?公釐） 4 )S4 3 ^ 2Cc.; y. ^__ 五、發明説明（7 ) 的化學放大光阻於微影製程中，形成一光阻層於半導體底 材上方，其厚度約為5000埃（八°)至12000埃，並經過預烤 2 0 0後，在曝光步驟3 0 0中以深紫外光為光源，利用一相位 轉移式光罩轉移圖案，曝光後之光阻層包含一曝光區與一 非曝光區，光罩上圖案透光部分之潛像形成於光阻曝光區 内，如第四圊所示之流程圖。如同在發明背景所述，由於 使用一具有半透光特性的光罩，因此曝光時會有複數個非 曝光區潛像，亦同時形成於原本不應有圖案的非曝光區 内。 藉由改變光阻曝光後的處理程序，可進一步改變於光 阻層内影像的特性，參見第四圖，於曝光步驟300後加入 一形成溶解抑制層的步驟3 5 0，形成一溶解抑制層於光阻層 上，溶解抑制層的形成，可具有抑制光阻層中輕微受光產 生潛像的區域，例如第一圖中曲線段1 6a中光強度較弱的 區域，於後續處理程序中被溶解的效應。因此藉由溶解抑 制層的形成，對於不應有圖案的非曝光區中的非曝光區潛 像，形成一抑制分解的效果，而對接受大量曝光的曝光區 圖案不會有任何的抑制效果。溶解抑制層的組成，以本實 施例而言，可使用一去離子水層，一般而言，可使用如嘖 嘴清洗晶圓的方式，喷灑或喷霧一層均勻的去離子水層於 光阻層上方，以形成一去離子水層。在去離子水層形成後， 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公簏） _____·__.__一_______丁______t I -sΟ ---- (請先閱讀背面之注意事項再填寫本頁) 經濟部中央樣準局員工消費合作社印製 β 2 Qq4 3 Α. ρ --- --Β7 五、發明説明（f ) ' 可將此基材視需要靜置數秒至數分鐘不等，以此實施例而 言，靜置0.5秒至30秒即足以達成對非曝光區潛像溶解抑 制的效應。 藉由改變光阻曝光後的處理方法，形成一溶解抑制 層，會使非曝光區潛像在進行曝光後烘烤400後，於顯影 步驟500時達成一抑制溶解的效果，因而減少非曝光溶解 的效應，甚至可將其完全消除，如第五圖所示，於非曝光 區不會有任何圖案遭到溶解的破壞，且對原有的曝光區所 定義的圖案不會有任何的影響，而使光罩上的圊案能完整 而正確的轉移至光阻層上，於微影製程後將精確的圖案再 現。且由於本發明中的方法易於實施，在製程上易於配合 而成本負擔極小，而能確實減少非曝光區溶解的效應，甚 至可進一步將其完全消除，改變傳統積體電路中受到微影 製程限制的設計規則（design rule)，增加積體電路的積集 度0 本紙悵尺度適用中國國家標準（CNS ) Λ4規格（2丨0X297公釐） 一/〇 — -----.----ί-------IT------^ I (請先閲讀背面之注意事項再填寫本頁} . _ 了領神化同 助此精變等 幫悉之之其 以熟明同及 藉而發等圍 於，本中範 用神離藝利 僅精脫技專 ，之不域請 上明在領申 如發，此之 明本後及附 說定神飾後 例限精潤視 施以之動當 實用明更圍 佳非發許範 較，本些護 I 施悟作保 以實領可利 明之於當專 。 發明者，其定 本發藝内，而 本技圍換域 解域範替領 經濟部中央標準局員工消費合作杜印製AT Β · 5. Description of the invention (death) The present invention changes the treatment process after photoresist exposure, and adds a step of forming a dissolution inhibiting layer 'formed on the photoresist after exposure, and the formation of dissolution inhibiting layer' can suppress plural The dissolution of a latent image of a non-exposed area in the subsequent photoresist treatment process "By the method of the present invention, the effect of dissolution of the non-exposed area is reduced, the accuracy of the lithography process pattern is increased, and the integration degree of the integrated circuit is further improved . Printed by the Consumer Cooperative of the Central Government Bureau of the Ministry of Economic Affairs-Generally speaking, forming a patterned photoresist layer in the lithography process can involve several steps. Referring to the third figure, a skeleton substrate is first provided. The substrate may include a wide range of layers to be patterned. The substrate is subjected to a photoresist coating step to form a photoresist patterned layer; Then perform a pre-baking process 2000 to heat the solvent in the photoresist layer to increase the adhesion of the photoresist layer; and perform an exposure of the other photoresist layer 300, and use a light source to pass through a photoresist layer. A deep ultraviolet light is used as a light source, and the pattern is transferred and exposed through a phase mask to form a latent image of a desired pattern thereon, and then the semiconductor substrate is passed through an exposure for baking step 400, for baking 4 The function of 〇〇 will be different depending on the type of photoresist used, which will be described in detail later; finally, by a development program 500, the photoresist layer is dissolved, for example, a positive photoresist, Dissolve the light from the photoresist layer to form the desired pattern on the photoresist layer. The semi-conducting non-layered layer has been exposed in the same solution after exposure to a light transfer photoresist layer on a non-evaporative flooding substrate. ---.---- 乂 ----- Γ Order J ------ 1 ^ I:-Ink-(Please read the precautions on the reverse side before filling out this page) f this. Zhang ruler anti-Chinese Standard (CNS) Λ4 specification (210X 297 male) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 4 2 0 8 4 3 B " V. Description of the Invention (沴) In terms of the photoresist currently used commercially, it can be divided according to its exposure and dissolution reaction characteristics. The two types are described below. The first type is represented by the first type and the second type. The first type is the most commonly used photoresistor in the early traditional processes. The first type is generally high. Made of molecules or similar materials, the first type of photoresist produces a photochemical reaction upon exposure, causing changes in the internal molecular links and solubility in its exposed and non-exposed areas. Therefore, for this type of photoresist, , Post-exposure baking 400 has a limited effect on the pattern. General functions such as use in eliminating photoresist layers after exposure Small defects, such as to eliminate the defects caused by standing waves, etc. The light receiving and dissolving characteristics of the second type of photoresist are different from the first type of photoresist. Generally, the second type of photoresistance is in After receiving light, a photochemical reaction occurs to form a latent image. During the baking process after exposure, such as changes in intermolecular linkages, and changes in the solubility of the exposed and non-exposed areas, etc., it is exposed in photoresist. The processing after step 300 and before exposure to baking 400 can further change the characteristics of the pattern defined on the photoresist layer by different processing procedures. An example of the second type of photoresist is that phase shift is currently used Chemically amplified photoresist is often applied during the photolithography process of the photomask. Without limiting the spirit of the present invention, in this embodiment, one of the above is used--f [t ί II _ _ _ _ nn __ _ I Ding! ^ _) _ Qi i -9Λ-_-I (Please read the precautions on the back before filling this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X29? mm) ) 4) S4 3 ^ 2Cc .; y. ^ __ 5. The chemically amplified photoresist of (7) is stated in the photolithography process to form a photoresist layer over the semiconductor substrate. Its thickness is about 5000 angstroms (eight °) to 12000 angstroms, and after pre-baking 2000, In the exposure step 300, deep ultraviolet light is used as a light source, and a phase transfer mask is used to transfer the pattern. The exposed photoresist layer includes an exposed area and a non-exposed area, and a latent image of the transparent part of the pattern on the mask is formed. In the photoresist exposure area, the flow chart shown in the fourth figure. As described in the background of the invention, since a mask having a translucent property is used, a plurality of latent images of non-exposed areas are formed during exposure, and at the same time, they are formed in non-exposed areas which should not have a pattern. By changing the processing procedure after the photoresist exposure, the characteristics of the image in the photoresist layer can be further changed. See the fourth figure. After the exposure step 300, a step 3 50 for forming a dissolution inhibiting layer is added to form a dissolution inhibiting layer. On the photoresist layer, the formation of the dissolution-inhibiting layer may have a region that suppresses the generation of a latent image by slight light reception in the photoresist layer, for example, the area of weaker light intensity in the curve segment 16a in the first figure is used in subsequent processing procedures. Dissolving effect. Therefore, by dissolving the formation of the suppression layer, a non-exposed region latent image in a non-exposed region where there should be no pattern has an effect of suppressing decomposition, and it has no effect on the pattern of the exposed region which receives a large amount of exposure. For the composition of the dissolution inhibiting layer, in this embodiment, a deionized water layer can be used. In general, a wafer can be cleaned by spraying or spraying a uniform deionized water layer on the light. Over the resist layer to form a deionized water layer. After the deionized water layer is formed, the paper size is applicable to China National Standard (CNS) A4 (210X297). _____ · __.__ 一 _______ 丁 ______t I -s〇 ---- (Please read first Note on the back, please fill out this page) Printed by the Consumer Cooperatives of the Central Bureau of Procurement, Ministry of Economic Affairs β 2 Qq4 3 Α. Ρ --- --B7 V. Description of the invention (f) '' This substrate can be left as it is It ranges from several seconds to several minutes. In this embodiment, it is sufficient to stand for 0.5 to 30 seconds to achieve the effect of suppressing dissolution of the latent image in the non-exposed area. By changing the treatment method after photoresist exposure, a dissolution inhibiting layer is formed, so that the latent image in the non-exposed area can be subjected to post-exposure baking 400 to achieve a dissolution inhibiting effect in the development step 500, thereby reducing non-exposure dissolution. Effect can even be completely eliminated. As shown in the fifth figure, no pattern will be damaged by dissolution in the non-exposed area, and the pattern defined by the original exposed area will not have any effect. The mask on the photomask can be completely and correctly transferred to the photoresist layer, and the accurate pattern can be reproduced after the lithography process. And because the method of the present invention is easy to implement, it is easy to cooperate in the process and the cost burden is minimal, it can indeed reduce the effect of dissolution in the non-exposed area, and it can even be completely eliminated, changing the limitation of the lithography process in the traditional integrated circuit Design rule to increase the integration degree of integrated circuits. 0 The paper scale is applicable to the Chinese National Standard (CNS) Λ4 specification (2 丨 0X297 mm). 1 / 〇— -----.---- ί ------- IT ------ ^ I (Please read the precautions on the back before filling out this page}. _ I have learned the same from the help of this transformation And borrowed hair and so on, this book uses God from the arts to benefit only from the special technical skills, please do not apply to the Ming Ming in the application, such as the postscript and attached to the God after the decoration is limited to the implementation of fine vision When the action is more practical, it is better to send a better fan than to send a fan. This is to protect the actual situation to ensure that the real can be good to the master. The inventor, the book is in the hair, and the skill is to change the domain and solve the domain. Consumption cooperation for the staff of the Central Standards Bureau of the Ministry of Economic Affairs