417192 A7 B7 五、發明說明（1 ) 發明的技術領域本發明是關於利用在半導體或液晶等薄膜元件的製造上 的乾式蝕刻方法及裝置。先前技術 Μ前，多晶砂（polycrystalline silicon)或紹合金的 乾式蝕刻裝置是使用構件，該構件含有多量氧的石英或鋁 的陽捶氧化膜（耐酸鋁，aUraite)或氧化鋁陶瓷（AU03 ，Μ充當触刻室（etching chaaiber)壁面的材 料*因此種乾式蝕刻裝置比較便宜，較容易獲得高純度產 物*電氣特性安定。 下文中針對先前的乾式蝕刻裝置加以說明，圖4顯示模 式的先前的感應结合型乾式蝕刻裝置的一範例，此乾式蝕 刻裝置在蝕刻室21的上方處設置有石英製的電磁界導人窗 22，另外在罨磁界導人窗22之上方處配置著線圈23(c〇ii) 此種線圈23處*高頻電源24經由阻抗整合電路25連接至 線圈23。另外，蝕刻室21的下方設置著電極30*電極30上 閲 讀 背 & 之 注 意 事 項再， f 本 頁 裝 訂 線 經濟部智慧財產局員工消費合作社印製 刻 蝕 至 接 Μί- 遵 2 3 路 雷 合 整 〇 抗件 阻元 經邊 3 周 源板 電基 頻是 高29 ， 號 28符 板。 基方 著下 置的 配室 钃 氣 應 反 內 2 室 刻 蝕 ΟΪ統 η 系 S 氣 5 华 a 0 ffl ( 用 6 ί 2 藉 器， 制21 控室 虽刻 流蝕 過入 通専 2 内 口21 給室 供刻 自蝕 ， 持 Γ}保 16地 01當 tr適 電 生 產 以 上 3 2 圈 線 在 施 壓 電 頻 高 將 中 構 结 。 的 壓上 氣以 的 板 基 將 能 而 基 由 自 興 子 雛 著 射 入。 上掉 面刻 表蝕 的物 28刻 板蝕 基被 , 的 34上 漿28 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 _B7_ 五、發明說明（2 ) 發明欲解決的問題 在本文中*使用上述结構的乾式蝕刻裝置，當利用蝕刻 法進行去除蝕刻掉多晶矽或鋁合金時，電磁界導入窗22的 石英也被蝕刻掉，矽與氣就混入於電漿34中*另外•當蝕 刻室21的側壁或基板周邊元件29也被蝕刻，氧混人電漿34 中，就因為此種氧，基板28上的抗蝕劑（resist)被蝕刻， 而造成問題，此外，已被蝕刻的多晶矽的圖菜（pattern) 側壁處，附著著主成分是氣的保護膜•造成圖案的尺寸加 大的問題。 鑑於上逑問題*本發明的目的是提供一種乾式蝕刻方法及 裝置，此方法及裝置能減低自蝕刻室構成元件來的所放出 在電漿中氧的數量*抑制抗蝕劑的被蝕刻量，計剷圖案側 壁保護膜能薄膜化*能實現較為更高精密度的蝕刻性能。 解決問題所用的手段 本發明的乾式蝕刻方法是蝕刻室中與電漿接觴的元件的 一部分或全部是採用氧的組成比下的材質轉變製成 •利用排氣糸統將蝕刻室内壓力減壓，同時將反懕氣體導 入，當電漿產生手段開始動作，經由電磁界導入窗，導入 電磁界，反應氣體被電漿化，去除該配置在蝕刻室中的基 板的被蝕刻膜。 尚且，本發明的乾式蝕刻装置具備有蝕刻室與導入手段 與電漿產生手段；蝕刻室利用排氣糸統能減低壓力，且蝕 刻室中與電漿接觸的元件的一部分或全部是採用氧的組成 比50¾以下的材質製成；在蝕刻室内，導入手段將反應氣 表紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 先 閱 讀 背 之 注 意 事 項 Sc = I裝 頁 訂 經濟部智慧財產局員Η消費合作社印製 -5 五、發明說明（3 A7 B7 體導入，Μ去除在蝕刻室中配置的基板的被蝕刻膜。 依據本發明的結構，利用含氧元素的含童少的材科構成 與電漿接觸元件的一部分或全部，能減低氧元素混入電獎 中的氧混入量*抑制抗蝕劑的蝕刻量，以策剷圖案側壁保 護膜的薄膜化，實現較高精密度的蝕刻性能。 特別是，蝕刻室的雷磁界専人窗的内面上氧也減少，當 氧的組成比是使招50¾¾下的紂質，混人電漿中.的氧溫入 量減低，效果更大。 此外，氧的組成比50¾ Μ下的材質是氮化矽膜，或矽， 或碳化矽，或碳，或氮化鋁*或聚醯亞胺，或聚醢胺，是 氧的含有量極少的材料：電漿中氧含量減低，獲得較大效 果，電氣絕緣性良好。 此外，被蝕刻膜是矽或多晶矽，或聚醢亞胺*或鋁，或 鋁合金，或鈦|或鈦合金，或鎢。伴隨著電漿中氧含量變 小，蝕刻性能更顯著地改菩，發揮更大的效果 圈面的簡單說明 --- Ί--4· I---I I > I I---— 1 訂-- ----- (請先閲讀背面之注意事項再本頁) 經濟部智慧財產局員工消費合作社印製 圖1是本發明的乾式蝕刻裝置的第1的實施形態的概略结 構圖。 圖2是本發明的乾式蝕刻裝置的第2的實施形態的概略結 構圖。 圖3是本發明的乾式蝕刻裝置的第3的實腌肜態的概略結 構圖。 蹰4是Μ前例的乾式蝕刻裝置的概略結構圖。 元件編虢之說明 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 6 4 1 7 Ί 9 A7 B7 五、發明說明（4 經濟部智慧財產局員工消費合作社印製 1 蝕 刻 室 2 電 磁 界 導 人 窗 (氮 化 矽製 3 線 圈 4 高 頻 雷 源 5 整 合 電 路 6 流 量 控 制 器 7 氣 體 供 給 j—t 8 基 板 9 基 板 周 邊 元 件 10 電 極 11 高 頻 電 源 12 蝥 合 電 路 1 3 排 氣 糸 統 14 電 磁 界 導 入 窗 (石 英 製） 15 蓋 件 (氮化矽製 ) 16 微 波 導 入 窗 (氣 化 B 製） 17 磁 控 管 18 導 波 管 19 電 磁 石 21 蝕 刻 室 22 電 磁 界 導 人 窗 23 線 圈 24 高 頻 電 源 25 阻 抗 整 合 電 路 1, 1---ί -裝 -------訂---------線 (請先閱讀背面之注意事項再"^寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（21〇χ 297公釐） 7 41 7 1 92 A7 _B7五、發明說明（5 ) 26 流 量 控 制 器 27 供 給 P 28 基 板 29 基 板 周 邊 元 件 30 電 極 31 高 頻 電 源 32 胆 抗 整 A. 电 路 33 排 氣 系 統 34 電 漿 發明 的實砲形態 (請先閱讀背面之注意事項再^v寫本頁) 經濟部智慧財產局員工消費合作社印製 下文中*參閲圖1至圖3說明本發明的乾式蝕刻裝置的實 施形態。 第1實施形態 圖1中顯示本實施形態的乾式蝕刻裝置，其具傅有感應 結合型的電漿源。fel中，在蝕刻室1的上方設置有電磁界 導入留2>另外在電磁界導入窗2i上方配置著線圈3。經由 阻抗蝥合電路5將高頻電源3連接至此線圏3，又，在蝕刻 室1的下方設置有電極10配置有基板8，經由阻抗整合雷路 12將高頻電源11連接。符號9是電極10上的基板周邊元件 。在蝕刻室1内*反應氣體通過流量控制器6而自供給口 7 導入蝕刻室1，藉用排氣系統13，能適切地保持該蝕刻室1 内的壓力。 在本實施形態中，為了抑制氣供給至雷漿中之量，電磁 界導入窗2是由氮化矽構成，另外，與電漿接觸的基板周 又度適用中國國家標準（CNS)A4規格(210 X 297公釐) ~ 8 - A7 _B7_ 五、發明說明（6 ) 邊元件9的材質是氮化矽。 如此，因電磁界専入窗2及與電漿接觸的元件9的材質是 氮化矽，故能斷絕氧供給至電漿中。 在表1中，用先前的石英構成的電磁界導入窗，與用本 實施例中的％化矽構成的電磁界導入窗兩者使用情況比較 下，測定出多晶矽的蝕刻比例（etching rate)與抗蝕劑選 擇比的结果。 I 1 !f1--II -------I---^------- {請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 表1中可清楚明瞭，用氮化矽構成的電磁界導人窗2之情 況時·多晶矽的蝕刻比例沒有多大的變化*而抗蝕劑選擇 比則能提高至約2倍。 第2實施形態 圖2顯示本霣施形態，電磁界導人窗14本體與K前例相 同是探用石英製成者，與此電漿接觸的蝕刻室1中*用氮 化矽的蓋件15覆蓋著接觸面。本實施形態中能抑制氧供給 至電漿中的量。 表 1 誘電板 氮化矽製 石英製 (本發明） (先前例） 多晶矽 蝕刻比例 190 200 (n a / n i η ) 多晶矽 抗蝕劑選擇比 5.6 2 . 8 -9 - ‘紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 417192 A7 B7 五、發明說明（7 經濟部智慧財產局員工消費合作社印製 第3實施形態 本實施形態中，在蝕刻室1中導人微波（micfowave)，產 生電漿，使本發明適用於ECR乾式蝕刻裝置。 在圈3中*利用磁控管（magnetron)17產生的微波通過一 導波管18*而引導至蝕刻室1的上方，經由微波導入窗16 ，而導入蝕刻室1中構成。符號19是配設在蝕刻室1的上方 外周處的電磁石。在本實施形態中•激波導入窗16是吊氣 化矽構成，Μ抑制氳供給至電漿中；另外，與電漿接觸的 基板周邊元件9的材質是用氮化矽構成。 如此*微波導入窗16及與電漿接觸的元件9的材質是氮 化矽，能阻絕氧供給至電漿中。 尚且，在Μ上各個實腌形態中已說明*電磁界導人窗2 及與電漿接觸的基板周邊元件9是用氮化矽構成，希望蝕 刻室1的内壁面全體是皆用氮化矽構成的蓋件。另外，構 成蝕刻室1内的大部分元件是氮化矽，故能完全斯絕氧的 供給。 另外，在上文的說明中，係用多晶矽被蝕刻的情況下加 Μ說明，然矽*聚醢亞胺、鋁、鋁合金、钛、钛合金，鋳 亦能獲得同樣的效果。 另外*在上文說明中顧示用氮化矽構成之例子，然矽、 碳化矽、碳、氮化鋁、聚醯亞胺、聚醯胺等材科不含有氧 ，故亦能獲得同樣的效果。但是，就癬命或材料的性質而 言，氮化矽最適當。 此外，本發明亦適用在電漿化學蒸氣沈積裝置中，電漿 I I J i I —Ί I I I I I i -----I---^ ---------I — y/i. (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS>A4規格（210 X 297公釐） 10 經濟部智慧財產局員工消費合作社印製 i a 1 y J ζ： il 丨 ： '二 A7 _B7_五、發明說明（8 ) 化學蒸氣沈積裝置在基板（已載置在真空容器内）上形成薄 膜，即，與上述實胞形態同樣，在構成真空容器的元件之 中 > 與電漿接觸的元件的材質是氮化矽，故能斷絕氧供給 至電漿中，亦能防止氧混入的薄膜污染。 發明效果 上文中，按照本發明的乾式蝕刻方法與裝置，使用氣含 量少的材料構成與電漿接觸元件的一部分或全部•能減低 绲入電漿中的氧混入量，抑制抗蝕劑的被蝕掉虽，能規劃 圖案側壁保護膜的薄膜化，能實現更高精密度的蝕刻性能。 更特別的，蝕刻室的電磁界導入窗是相對於以前大多用 石英等構成，藉用氣的組成比是50¾以下的材質=混入至 電漿中的氧混入量減低效果更大。 此外，氧的組成比50¾以下的材質是氮化矽，或矽，或 碳化矽》或碳，或氮化鋁，或聚醢亞胺、或聚醸胲，是氧 的含有童極少的材料，電漿中氣含量減低 > 獲得較大效果 ，電氣絕緣性良好。 此外，被蝕刻膜是矽或多晶矽，或聚醯亞胺，或鋁，或 鋁合金，或钛*或鈦合金*或鎢。伴随著電漿中氧含量變 小，蝕刻性能更顯著地改善*發揮更大的效果。 (請先閱讀背面之注意事項再填寫本頁) .裝 -------訂 -------線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） —11 -417192 A7 B7 V. Description of the Invention (1) Technical Field of the Invention The present invention relates to a dry etching method and apparatus for manufacturing thin film elements such as semiconductors and liquid crystals. Prior to the prior art, polycrystalline silicon or dry alloy dry etching devices used components that contained a large amount of oxygen-containing quartz or aluminum impregnated oxide film (acid-resistant aluminum, aUraite) or alumina ceramics (AU03, Μ acts as the material of the wall of the etching chaaiber * Therefore, this type of dry etching device is cheaper, and it is easier to obtain high-purity products. * The electrical characteristics are stable. The following describes the previous dry etching device. Figure 4 shows the previous mode of the mode. An example of an inductive coupling type dry etching device. This dry etching device is provided with an electromagnetic lead window 22 made of quartz above the etching chamber 21, and a coil 23 (c 〇ii) The high-frequency power source 24 at the coil 23 is connected to the coil 23 via the impedance integration circuit 25. In addition, an electrode 30 is provided below the etching chamber 21 * Notes on the reading back & Binding line Printed and etched by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to the MIL- Zun 23 Road Lightning Assembly 0 Resistor resistance Yuan Jingbian 3 weeks source The electric fundamental frequency is 29, 28, and the base plate should be etched against the inner chamber. The system should be etched in the inner 2 chambers, and the S gas should be 5 Hua a 0 ffl (using 6 ί 2 borrower, system 21 Although the control room is etched through the inlet 2 and the inner port 21 is used for etching and self-etching, it holds Γ} 16 and 01 when tr Shidian produces more than 3 2 coils of wire in the high frequency application. The upper base of the board will be able to be injected by the self-promoting child. The top-etched surface etched 28 etched etched quilt, 34 sizing 28 4 This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) A7 _B7_ V. Description of the invention (2) The problem to be solved by the invention in this article * Using the dry etching device with the above structure, when the polycrystalline silicon or aluminum alloy is removed by etching, the electromagnetic boundary is introduced The quartz of the window 22 is also etched away, and silicon and gas are mixed into the plasma 34 * In addition, when the sidewall of the etching chamber 21 or the substrate peripheral elements 29 are also etched, and oxygen is mixed into the plasma 34, it is because of this oxygen , The resist on the substrate 28 is etched, and In addition, the pattern side wall of the polysilicon that has been etched has a protective film whose main component is gas. This increases the size of the pattern. In view of the above problem, the object of the present invention is to provide a Dry etching method and device, this method and device can reduce the amount of oxygen released in the plasma from the constituent elements of the etching chamber * suppress the amount of resist being etched, and reduce the thickness of the protective film on the side wall of the shovel pattern * can be realized Higher precision etching performance. Means for solving the problem The dry etching method of the present invention is that a part or all of the elements connected to the plasma in the etching chamber are made of a material with a composition ratio of oxygen. The pressure in the etching chamber is reduced by the exhaust system. At the same time, the reverse gas is introduced. When the plasma generation means starts to operate, the electromagnetic boundary is introduced through the electromagnetic boundary introduction window, and the reaction gas is plasmatized to remove the etched film of the substrate disposed in the etching chamber. Moreover, the dry etching device of the present invention includes an etching chamber, an introduction means, and a plasma generation means; the etching chamber can reduce the pressure by using an exhaust gas system, and part or all of the elements in contact with the plasma in the etching chamber use oxygen. Made of materials with a composition ratio of 50¾ or less; In the etching room, the introduction method will adapt the paper size of the reaction gas table to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). Printed by a member of the Ministry of Intellectual Property Bureau and printed by a consumer cooperative. 5. V. Description of the invention (3 A7 B7 body introduction, M removes the etched film of the substrate arranged in the etching chamber. According to the structure of the present invention, the oxygen-containing element is used to contain less children. A part of the material composition and the plasma contact element can reduce the amount of oxygen mixed in the oxygen element in the electricity award. * The amount of resist etching is suppressed to reduce the thickness of the protective film on the sidewall of the pattern. Precision etching performance. In particular, the oxygen on the inner surface of the window of the magnetic field of the etching room is also reduced. When the composition ratio of oxygen is 50 ¾¾, it is mixed in the plasma. The effect of lower oxygen temperature is greater. In addition, the material composition of oxygen at 50¾ M is silicon nitride film, or silicon, or silicon carbide, or carbon, or aluminum nitride *, or polyimide, or polymer. Ammonium is a material with very low oxygen content: the oxygen content in the plasma is reduced to obtain a large effect and the electrical insulation is good. In addition, the etched film is silicon or polycrystalline silicon, or polyimide * or aluminum, or aluminum Alloy, or titanium | or titanium alloy, or tungsten. With the decrease of the oxygen content in the plasma, the etching performance is more significantly changed, and a simple explanation of the circle effect is exerted --- Ί--4 · I- --II > I I ----- 1 order ------- (Please read the precautions on the back before this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Figure 1 is the dry etching of the present invention FIG. 2 is a schematic configuration diagram of a first embodiment of the apparatus. FIG. 2 is a schematic configuration diagram of a second embodiment of the dry etching apparatus of the present invention. FIG. 3 is a third embodiment of the dry etching apparatus of the present invention. Schematic structure diagram. Figure 4 is a schematic structure diagram of the dry etching apparatus of the previous example. Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) 6 4 1 7 Ί 9 A7 B7 V. Description of the invention (4 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 Etching Room 2 Electromagnetic Guide Window (Silicon nitride 3 Coil 4 High frequency lightning source 5 Integrated circuit 6 Flow controller 7 Gas supply j-t 8 Substrate 9 Substrate peripheral element 10 Electrode 11 High frequency power supply 12 Coupled circuit 1 3 Exhaust system 14 Electromagnetic field Lead-in window (made of quartz) 15 Cover (made of silicon nitride) 16 Microwave lead-in window (made of gasification B) 17 Magnetron 18 Waveguide tube 19 Magnet 21 Etching chamber 22 Electromagnetic guide window 23 Coil 24 High-frequency power supply 25 Impedance integration circuit 1, 1 --- ί -install ------- order --------- line (please read the precautions on the back before writing this page) Dimensions of this paper Applicable to China National Standard (CNS) A4 specification (21〇χ 297 mm) 7 41 7 1 92 A7 _B7 V. Invention Ming (5) 26 Flow controller 27 Supply P 28 Substrate 29 Substrate peripheral components 30 Electrode 31 High-frequency power supply 32 Amplification resistance A. Circuit 33 Exhaust system 34 Plasma invented by plasma (Please read the precautions on the back first ^ V write this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs * Hereinafter, an embodiment of the dry etching apparatus of the present invention will be described with reference to FIGS. 1 to 3. First Embodiment Fig. 1 shows a dry etching apparatus according to this embodiment, which has an induction-coupled plasma source. In fel, an electromagnetic boundary introduction stay 2 is provided above the etching chamber 1 and a coil 3 is disposed above the electromagnetic boundary introduction window 2i. A high-frequency power source 3 is connected to this line 3 via an impedance coupling circuit 5, and an electrode 10 and a substrate 8 are arranged below the etching chamber 1, and a high-frequency power source 11 is connected via an impedance integration lightning circuit 12. Reference numeral 9 denotes a substrate peripheral element on the electrode 10. In the etching chamber 1, the reaction gas is introduced into the etching chamber 1 from the supply port 7 through the flow controller 6. The exhaust system 13 can appropriately maintain the pressure in the etching chamber 1. In this embodiment, in order to suppress the amount of gas supplied to the lightning plasma, the electromagnetic field introduction window 2 is made of silicon nitride, and the substrate contacting the plasma is applied to the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) ~ 8-A7 _B7_ 5. Description of the invention (6) The material of the side element 9 is silicon nitride. In this way, since the material of the electromagnetic field penetration window 2 and the element 9 in contact with the plasma is silicon nitride, it is possible to cut off the supply of oxygen to the plasma. In Table 1, compared with the use of the electromagnetic boundary introduction window composed of the previous quartz and the electromagnetic boundary introduction window composed of the siliconized silicon in this example, the etching rate of polycrystalline silicon was measured and Results of resist selection ratio. I 1! F1--II ------- I --- ^ ------- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs It can be clearly seen in 1 that in the case of the electromagnetic guide window 2 made of silicon nitride, the etching ratio of polycrystalline silicon does not change much, and the resist selection ratio can be increased to about 2 times. Second Embodiment FIG. 2 shows this embodiment. The main body of the electromagnetic guide window 14 is made of quartz as in the previous example. In the etching chamber 1 in contact with the plasma, a silicon nitride cover 15 is used. Covered with contact surfaces. In this embodiment, the amount of oxygen supplied to the plasma can be suppressed. Table 1 Inductive plate made of silicon nitride and quartz (the present invention) (previous example) polycrystalline silicon etching ratio 190 200 (na / ni η) polycrystalline silicon resist selection ratio 5.6 2. 8 -9-'The paper size applies Chinese national standards ( CNS) A4 specification (210 X 297 mm) 417192 A7 B7 V. Description of the invention (7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Third Embodiment In this embodiment, a microwave (micfowave) is conducted in the etching chamber 1 The plasma is generated, so that the present invention is suitable for the ECR dry etching device. In the circle 3, the microwave generated by the magnetron 17 is guided to a position above the etching chamber 1 through a waveguide 18 *, and is introduced through the microwave. The window 16 is configured to be introduced into the etching chamber 1. The symbol 19 is an electromagnet disposed above the outer periphery of the etching chamber 1. In the present embodiment, the shock introduction window 16 is composed of suspended silicon gas, and M suppresses the supply of tritium to In addition, the material of the substrate peripheral element 9 in contact with the plasma is made of silicon nitride. In this way, the material of the microwave introduction window 16 and the element 9 in contact with the plasma is silicon nitride, which can prevent the supply of oxygen to In plasma Moreover, it has been explained in each solid pickled form on M * that the electromagnetic window 2 and the peripheral element 9 of the substrate in contact with the plasma are made of silicon nitride. It is desirable that the entire inner wall surface of the etching chamber 1 is made of silicon nitride. In addition, since most of the elements in the etching chamber 1 are made of silicon nitride, it can completely supply oxygen. In addition, in the above description, the description is given when the polycrystalline silicon is etched. However, silicon * polyfluorene, aluminum, aluminum alloy, titanium, titanium alloy, and rhenium can also achieve the same effect. In addition, * the examples above are described with silicon nitride in the description above, but silicon, silicon carbide, Materials such as carbon, aluminum nitride, polyimide, and polyimide do not contain oxygen, so the same effect can be obtained. However, silicon nitride is most suitable in terms of life and material properties. In addition, the present invention The invention is also applicable in plasma chemical vapor deposition equipment, plasma IIJ i I —Ί IIIII i ----- I --- ^ --------- I — y / i. (Please read first Note on the back, please fill in this page again) This paper size applies to Chinese national standard (CNS > A4 specification (210 X 297 mm) 10 Printed by IA 1 y J ζ: il 丨: 'Two A7 _B7_ V. Description of the invention (8) The chemical vapor deposition device forms a thin film on the substrate (which has been placed in a vacuum container), ie In the same manner as the above-mentioned cell form, among the elements constituting the vacuum container> the material in contact with the plasma is silicon nitride, so it can cut off the supply of oxygen to the plasma and prevent the thin film from being mixed with oxygen. ADVANTAGEOUS EFFECTS OF THE INVENTION In the foregoing, according to the dry etching method and apparatus of the present invention, a part or all of a plasma contacting element is formed using a material having a small gas content Although it is possible to reduce the thickness of the pattern side wall protective film, it is possible to achieve higher precision etching performance. More specifically, the electromagnetic field introduction window of the etching chamber is made of quartz or the like, and the composition ratio of the borrowed gas is 50 ¾ or less. Material = The amount of oxygen mixed into the plasma is more effective. In addition, the material with an oxygen composition ratio of 50¾ or less is silicon nitride, or silicon, or silicon carbide, or carbon, or aluminum nitride, or polyimide, or polyfluorene. It is a material that contains very little oxygen. Reduction of gas content in the plasma > Great effect is obtained and electrical insulation is good. In addition, the etched film is silicon or polycrystalline silicon, or polyimide, or aluminum, or an aluminum alloy, or titanium * or a titanium alloy *, or tungsten. As the oxygen content in the plasma decreases, the etching performance improves significantly * and a greater effect is achieved. (Please read the precautions on the back before filling out this page). ------------ Order ------- The size of the thread paper is applicable to China National Standard (CNS) A4 (210 X 297 mm) —11-