經濟部智慧財產局員工消費合作社印製 416102 A7 ____B7____ 五、發明說明（b 本發明是有關於一種半導體晶圓識別記號之刻印裝 置，其在半導體晶圓製造過程内，由雷射光刻印識別記 號在一晶圓表面上，以在元件製程中控制半導體晶圓的 品質，以及刻印識別記號的方法。 為了識別用在元件製程中的半導體晶圓的種類，文 子或條碼等在半導體晶圓製造步驟中利用雷射光刻印在 一半導體晶圓表面上。因此，由在元件製程中讀取識別 記號，用在各種元件製程中的半導體晶圓可被確認。 為了使識別δ己號在元件製程中可被正確地讀取，識 別記號必須被刻印至一定規格的深度，例如7〇 ± 2〇μιη。 在半導體晶圓製造步驟中完成的深度必須一定。在鏡面 研磨步驟後刻印識別記號的話，刻印屑會導致顆粒的產 生。因此，需在姓刻或研磨步驟前進行刻印。 然而當在研磨晶圓上刻印識別記號時，用在後續蝕 刻步驟中的蝕刻液會在刻印識別記號產生的到傷中產生 /亏點。又當在容許誤差大的研磨步驟前刻印識別記號時， 難以確認在鏡面研磨加工中識別記號深度的一定。不只 這不能符合在元件製程中所需的規格，有時識別記號本 身完全消失。 據此，如解決上述問題的方法，為了確定在研磨後 晶圓厚度一定，根據其量測厚度，晶圓薄片被分成複數 群。對每一群而言，考慮研磨的容許誤差，識別記號被 刻印至一深度。根據這方法，從識別記號刻印的刮痕在 研磨後在洗淨中被移除’且因此沒有污點由後續蝕刻所 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚） τ I 11 --------I------線 {請先閱讀背面之注意事項再填寫本頁) 4161^ Α7 Β7 經濟部中失標準局貝工消費合作社印装 416102 五、發明説明（2 導致。 然而根據其厚度將晶圓分類，不僅增加製程步驟， 也難以根據其切>{步驟進行晶圓切片。又當晶圓分類時， 分類數有限制。當在切片過程中厚度差異很大時，難以 符合在元件製程中所需的規格。 又用在習知厚度分類方法的量測厚i實際是在研磨 階段’且因此靠近晶圓a片中央部份的厚度被量測。當 在最後步射’在晶圓切4 t央部份的厚度和在刻印位 置的厚度差距大時’有刻印深度不一致的問題產生。 有鑑於上述的缺點，本發明的目的是提供一種在研 磨前在晶圓薄片上刻印識別記號之裝置和方法，該晶圓 薄片依據切片順序製造，且在鏡面研磨後識別記號之深 度一定 據此，本發明的半導體晶圓刻印識別記號之裝置包 括一支持半導體晶圓底面的回轉桌（turntabIe)，以在水平 方向上轉動半導體晶圓；一厚度量測裝置，以在半導體 周邊的任何位置上量測厚度；一雷射頭，以由雷射光在 半導體晶圓上刻印識別記號。雷射頭由厚度量測裝置的 量測深度所控制，且因此刻印深度可被控制。 又刻印半導體晶圓識別記號之方法是一由雷射光在 半導體晶圓薄片上刻印識別記號的方法。在晶圓薄片上 的計畫刻印或任何在刻印位置附近的位置上的厚度首先 被量測。且然後一識別記號被刻印在晶圓薄片上，其深 度為計畫刻印厚度加上半導體晶圓的最後處理步肆的六 (諳先聞讀背面之注項再填寫本頁}Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 416102 A7 ____B7____ V. Description of the Invention (b The present invention relates to a marking device for semiconductor wafer identification marks. During the semiconductor wafer manufacturing process, the identification marks are printed by laser lithography. A method for controlling the quality of a semiconductor wafer and marking an identification mark on the surface of a wafer in order to identify the type of the semiconductor wafer used in the component process. Laser lithography is used to print on the surface of a semiconductor wafer. Therefore, by reading the identification mark in the element process, the semiconductor wafer used in various element processes can be confirmed. In order to identify the δ number can be used in the element process. Correctly read, the identification mark must be engraved to a certain depth, such as 70 ± 20 μm. The depth to be completed in the semiconductor wafer manufacturing step must be constant. If the identification mark is engraved after the mirror polishing step, the scoring will be Causes the generation of particles. Therefore, it is necessary to carry out marking before the last name engraving or grinding step. However When the identification mark is engraved on the polished wafer, the etchant used in the subsequent etching step will generate / defect in the damage caused by the identification mark. When the identification mark is engraved before the grinding step with a large tolerance, it is difficult Confirm that the depth of the identification mark is constant during the mirror polishing process. Not only does this fail to meet the specifications required in the component manufacturing process, sometimes the identification mark itself completely disappears. Based on this, if the method to solve the above problem is to determine the wafer after polishing The thickness is constant. According to the measured thickness, the wafer sheet is divided into a plurality of groups. For each group, considering the tolerance of grinding, the identification mark is etched to a depth. According to this method, the scratches from the identification mark are polished. It was removed after washing 'and therefore there were no stains by subsequent etching. 4 The paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 cm) τ I 11 -------- I- ----- Line {Please read the notes on the back before filling this page) 4161 ^ Α7 Β7 Printed by the Shellfish Consumer Cooperative of the Bureau of Standards and Loss of the Ministry of Economic Affairs 416102 V. Description of the invention (2 caused. Ran Sorting wafers according to their thickness not only increases the number of process steps, but also makes it difficult to slice wafers according to their cutting> steps. When wafers are sorted, the number of classifications is limited. When the thickness varies greatly during the slicing process It is difficult to meet the required specifications in the component manufacturing process. The thickness i, which is also used in the conventional thickness classification method, is actually in the grinding stage, and therefore the thickness near the central part of the wafer a is measured. When at the end In step shot, when the thickness difference between the central portion of the wafer and the thickness at the marking position is large, there is a problem of inconsistent marking depth. In view of the above disadvantages, the object of the present invention is to provide a Apparatus and method for marking identification marks on circular wafers. The wafer wafers are manufactured according to the slicing sequence, and the depth of the identification marks after mirror polishing must be based on this. The device for marking identification marks on a semiconductor wafer of the present invention includes a semiconductor wafer Turntab Ie on the bottom to turn the semiconductor wafer horizontally; a thickness measuring device to measure at any position around the semiconductor Degree; a laser head, the light imprinting identification symbol on a semiconductor wafer by a laser. The laser head is controlled by the measuring depth of the thickness measuring device, and thus the marking depth can be controlled. The method of marking the semiconductor wafer identification mark is a method of engraving the identification mark on the semiconductor wafer sheet by laser light. The thickness of the plan marking on the wafer sheet or any position near the marking position is first measured. And then an identification mark is engraved on the wafer sheet, the depth of which is the planned engraving thickness plus the final processing step of the semiconductor wafer. (谙 First read the note on the back, then fill out this page}
本紙張尺度適用中囷國家標隼（CNS ) A4規格（2丨0X297公釐） 經濟部中央標準局貝工消费合作社印11 416102 A7 ____ B7 五、發明説明（3 ) 許誤差深廑。 根據本發明的半導體晶圓刻印識別記號的方法，刻 印過程包括量測被刻印識別記號的晶圓薄片的周邊的厚 度，從量測厚度計算半導體晶圓至最後處理步驟的容許 誤差深度，且刻印識別記號一深度，該深度為計晝深度 加上容許誤差厚度。 本發明可由後續的詳述與有附圖的例子，更能完全 了解。 圖示之簡 第夺凝’由本發明刻印方法製造的半導體晶圓的放 大斷面及 第本發明刻印裝置的簡圖。 首先’說明刻印裝置的較佳實施例。 參考第2a圖，刻印裝置包括一支持晶圓薄片2底 面的回轉桌5’可在水平方向上回轉；一厚度量測裝置3, 以在晶圓薄片2周邊的任何位置上量測厚度；以及一雷 射頭4’以由雷射光在晶„片2上刻印識別記號。雷 射頭4由厚度量測裝置3的量測深度所控制且因此刻 印深度可被控制》 根據刻印裝置，從一鑄塊切斷的晶圓薄片2在固轉 桌5上承载，且回轉直到刻印位置u在厚度量測裝置3 之下。以此方法，刻印位置n的厚度可得到。 I ---— — III* 篆— - ϋ— II 丁 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標率（〇”5)厶4規格（2丨0乂297公髮} 416102 A7 ---------... B7__ 五、發明說明（4) 參考第2b圖’晶圓薄片2被回轉直到刻印位置[j 在刻印裝置（未顯示）的雷射頭4之下。 其次’說明刻印方法的較佳實施例。 參考第la圖’當在刻印位置η由厚度量測裝置量 測的厚度為Τι ’在鏡面研磨後的厚度是T2，且在鏡面加 工後的取代值L被算出《又當由元件製程所需的最終加 工刻印深度D〗規格已被輸入刻印裝置，由加入取代值 Τ'3 ’在晶圓薄片2上被刻印識別記號的刻印深度可得 到。 參考第lb圖’由對被刻印識別記號的晶圓薄片2 上進行鏡面加工，取代值乙已被移除的半導體晶圓可得 到，且因此識別記號的最終刻印深度Di保持一定。 當本發明如以上構成，在鏡面研磨半導體晶圓的識 別記號的深度可保持一定’且因此符合元件製程的規格。 又並不需要將根據他們的厚度將晶圓分類，且因此 加工步驟數可減少且效率增加。因此晶圓可依據切片順 序製造。 -----------A--------訂---------線 -S靖先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐）The size of this paper applies to the Chinese National Standard (CNS) A4 (2 丨 0X297 mm). Printed by the Bayer Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 11 416102 A7 ____ B7 5. Description of the invention (3) The tolerances are deep. According to the method for marking an identification mark on a semiconductor wafer according to the present invention, the marking process includes measuring the thickness of the periphery of the wafer sheet on which the identification mark is marked, calculating the allowable error depth of the semiconductor wafer to the final processing step from the measured thickness, and marking. The identification mark is a depth, which is the depth of day count plus the allowable error thickness. The present invention can be more fully understood from the following detailed description and examples with drawings. Schematic diagram of a schematic diagram of an enlarged cross section of a semiconductor wafer manufactured by the marking method of the present invention and a marking device of the present invention. First, a preferred embodiment of the marking device will be described. Referring to FIG. 2a, the engraving device includes a rotary table 5 'supporting the bottom surface of the wafer sheet 2 so that it can be rotated in a horizontal direction; a thickness measuring device 3 for measuring the thickness at any position around the wafer sheet 2; and A laser head 4 'is engraved with an identification mark on the wafer 2 by laser light. The laser head 4 is controlled by the measuring depth of the thickness measuring device 3 and therefore the marking depth can be controlled. "According to the marking device, The wafer sheet 2 cut by the ingot is carried on the fixed table 5 and rotated until the marking position u is below the thickness measuring device 3. In this way, the thickness of the marking position n can be obtained. I ------ III * 篆 —-ϋ— II D (Please read the notes on the back before filling in this page) This paper size is applicable to China's national standard rate (〇 ”5) 规格 4 specifications (2 丨 0 乂 297)} 416102 A7- --------... B7__ 5. Description of the invention (4) Refer to FIG. 2b 'wafer sheet 2 is rotated until the marking position [j is under the laser head 4 of the marking device (not shown). Next, 'the preferred embodiment of the marking method is described. Refer to FIG. 1a' when the thickness measurement device is used at the marking position η The measured thickness is T ′. The thickness after mirror polishing is T2, and the replacement value L after mirror processing is calculated. “The final processing marking depth D required by the component manufacturing process.” The specifications have been entered into the marking device. Substitute value T'3 'can be obtained with the marking depth of the identification mark on the wafer sheet 2. Refer to Figure lb' for mirror processing of the wafer sheet 2 with the identification mark, and the replacement value B has been removed. The semiconductor wafer can be obtained, and therefore the final marking depth Di of the identification mark is kept constant. When the present invention is structured as described above, the depth of the identification mark of the semiconductor wafer polished on the mirror surface can be kept constant ', and thus meets the specifications of the element manufacturing process. There is no need to classify wafers according to their thickness, and therefore the number of processing steps can be reduced and the efficiency can be increased. Therefore, wafers can be manufactured according to the slicing order. ----------- A ----- --- Order --------- Line-S Jing first read the notes on the back before filling out this page) Printed on the paper by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper applies Chinese National Standard (CNS) A4 specifications (210 x 297 male %)