415029 at B7 五、發明説明（） 發明領域： 本發明係有關於一種介電層蝕刻製程，且更特別的 是，有關於一種利用預先之金屬濺鍍使介電層蝕刻製程穩 定的方法。 C- 發明背景： 在半導體工業中，當積體電路的積集度增加，元件縮 小，則元件便無法提供足夠的面積來製作元件之間的電性 連接，或稱作内連線（interconnect)»因此兩層以上的金 屬層設計，是必需採取的方式。較複雜的元件，例如執行 邏輯運算的微處理器，更需要多層的金屬層，方能完成各 個元件之間的連接。 早期的多重金屬化製程中，由於層數不多，且製程之 線寬比較寬鬆，因此金屬化製程較容易，介電層之平坦化 要求也較不嚴格《然而，當元件愈趨細密，就必需配合新 的製程技術方能達到要求。多重金屬化製程令，有所謂接 觸窗（contact)和介層窗（via)之製程技術。一般之接觸窗 係用來直接接觸金屬層導線和電晶體之元件的各極（如閘 極之矽化鈦（TiSi2)，源極/汲極之摻雜矽等），而介層窗 則是用來連絡上下不同金屬層之用》當接觸窗插塞 (contact plug)和介層窗插塞完成之後，貝j以LPCVD法沉 積鎢之金屬而形成鎢插塞和以例如濺鍍之方法而沉積高 本紙張尺度適用中國國家揉率（CNS > Α4坑格（210χ297公釐） (請先閎讀背面之注意事項再填寫本頁) ί -訂 經濟部智慧財產局員工消費合作社印製 415029 a7 ___B7 五、發明説明（） 溫銘等方式來回填到接觸窗/介層洞之中。 (請先閲讀背面之注意事項再填寫本頁} 而為了製作多重金屬化製程，介電層的平垣化製程也 是重要的步驟之—。在做為接觸窗之用的第一層金屬層尚 未進行前，可將以CVD法所沉積之介電層，如BPsg層， 以熱流法在85{rc到95(rc之高溫下加以平坦化，但若是 .以鋁為主的金屬層沉積之後，後續的絕緣用介電層就必需 以例如旋塗式玻璃（Spin On Glass，SOG)或化學機械研磨 法（Chemical Mechanical P〇Hshing，CMP)法來執行局部 性或全面性的平坦化製程，以方便後續的多重金屬化製 程。 經濟部智慧財產局員工消費合作社印製 在介電層如接觸窗和介層窗之蝕刻中，大都利用含有 氟化碳的電漿進行乾式蝕刻，例如最早期的四氟化碳 (CF<) ’或現在的C2h ’ C«Fe等等。由於矽原子（Si )和氣 原子（F )可形成具揮發性的四氟化矽（s丨F<)，因此氟化唉 極適合作為二氧化矽的介電層蝕刻電漿。而在氟.化碳電毁 中加入適量的氧氣’則可導致電漿内的氟原子數增加，進 而增加二氧化矽之蝕刻速率》但若加入氩，則使氟原子之 濃度減低而降低二氧化矽之蝕刻速率β因而，氟/碳之比 值’對電漿之蝕刻有決定性的影響，同時也代表了蝕刻反 應（由電漿内的氟原子主導）和高分子反應（由電漿内的碟 原子主導）此兩種反應機構並行的電漿蝕刻。而氟/碳之比 值’即可由上述之氧氣和氫氣之調配而有所變化。 在接觸窗之触刻中，如前面所述的，例如和閘極的 矽化金屬接觸點，通常會以矽化鎢或矽化鈦作為蝕刻中止 3 本纸張尺度適用中國國家標準（CNS > Α4规格（210X297公釐） 415029 Α7 _ Β7 五、發明説明（） 層，或者在介層窗之蝕刻中，由於是在不同金屬層之間進 行介層敍刻’因此經常要蝕刻氮化鈦（TiN)抗反射層（或阻 障層）’或以氮化鈦層作為蝕刻中止層β由於矽化鈦或氮 化欽層含有金屬鈦，因而在蝕刻此類金屬層時，反應製程 中將使得金屬由於電漿蚀刻而賤鍵到反應室中並沉積擴 - 散到反應室的配件上，造成反應室配件的污染。 C* 現在常用的蚀刻反應器為一種稱作感應耦合式高密 度電衆（HDP )的蝕刻反應器’例如一種稱作感應式電漿源 (Inductive Plasma Source, IPS)之介電層蝕刻反應器。 第一圏中所示即為此類反應器之簡圖β此範例係取自美商 應用材料公司（Applied Materials, Inc. of Santa Clara, California, U.S.A.)所製造之反應器。 於此圖中’除了相關的元件之外，其它的元件均予以 簡化處理=結構中’由半導體所組成之矽頂板丨丨〇係加以 接地’且選擇適當之阻抗和厚度以便將感應線圈1〇〇所產 生的軸向RF磁場傳到反應室中而將反應氣體解離。而晶 圓130則放置於陰極基座上並施以適當的偏壓功率 圍繞於晶圓130旁邊的矽環120由加熱器陣列（未顯示於 圖中）控制其溫度β矽環120和矽頂板110都具有從反應 室中的氟碳化合物或氟原子基底的電漿中抓取氟原子的 作用》因而這些配件也具有控制氟/碳之比值的作用，同 時可進而控制反應室之姓刻速率》 然而，當接觸窗/介層窗之姓刻製程中’由於梦化欽 或氮化鈦層所釋放之金屬鈦污染了矽頂板110或砂環120 本纸張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） m· —1 —An tut n (請先閲讀背面之注意事項再填寫本頁) -、ΤΓ 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消费合作社印製 415029 at B7 五、發明説明（） 等配件時，則擴散到此配件中的鈦將影響其抓取氟原子的 功用。再者，由於矽頂板110的作用除了傳遞RF磁場以 解離反應性氣體形成電漿之外，當電漿產生時，此矽頂板 1 1 0又可做為電性上接地的迴路*以便讓製程順利的進 行，因而矽頂板1 1 0之污染將影響其阻抗值，使得製程條 : 件產生變化。 此類的製程變化可能會產生許多不可預期的影響。例 如，在接觸窗/介層窗插塞中的底部產生聚合物層之沉 積，或者無法順利的敍刻到蚀刻中止層（e t c h s t ο p)，或 者使得底層的選擇比產生變化...等缺點。 以往在遭遇到此類問題時，工程師總嘗試用各種不同 的製程參數改變來解決，但皆無法得到穩定的製程結果。 因此極需要有一種製程方法，能修正此蝕刻製程中金屬材 料污染反應器配件所引發的製程漂移現象，以便得到具信 賴度的蝕刻製程。 發明目的及概述： 鑒於上述之發明背景中，傳統的感應式電漿源 (Inductive Plasma Source, IPS)之介電層叙刻反應器， 由於在接觸窗（con tac t)製程中，蝕刻到矽化鈦（T i S i 2) 之蝕刻中止層時會將鈦金屬以電漿蝕刻而揮發出來，或者 在介層窗（v i a )製程時蝕刻到氮化鈦（T i Μ )之蝕刻中止層 本紙張尺度適用中國國家標準（CNS } Μ规格（210Χ297公釐） -^^1 I i tr _~— ^^1 .1- - t— .本 ^^^1 - - - - (請先閱讀背面之注意事項再填寫本頁) 415029 A7 B7 五、發明説明（） 或將氮化鈦移除時也會產生鈦金屬，此類電漿蝕刻製程而 揮發出來的鈦金屬將污染反應器中的配件，使得RF電磨 之耦合效率偏低，或改變製程之電性迴路參數，致使製程 條件偏移而無法完成蚀刻，或產生聚合物累積無法去除， 蝕刻選擇比變化等等問題。 為了徹底解決上述之金屬污染問題所帶來的不良副 作用’因此本發明所揭露的係為一種先行利用具有發化鈦 及/或氮化鈦鍍層的晶圓進行電漿蝕刻，使反應器中的鈦 金屬含量飽和’在確認鈦金屬含量飽和之後，才進行後續 的製程。利用本發明所提供的製程，則概述如下： (1 )先以具有矽化鈦和/或氮化鈦鍍層或圖案化之石夕 化鈦和/或氮化鈦鍍層的晶圓放置於反應器中進行濺錄， 此時的製程條件，則可為進行接觸窗/介層窗飫刻製程時 所提供的製程條件，例如提供GF*之反應氣體，並加上 適量的C0和氬氣（Ar)來進行。 (2 )移除具有矽化鈦和/或氮化鈦鍍層之晶圓，放入空 白的矽晶圊（bare wafer)，再進行蝕刻後的處理製程 (Post Etching Treatment, PET)，由於鈦金屬會擴散到 反應器的配件中，為了讓反應器之各種參數都到達穩定狀 態’並將相關弱鍵結的鈦金屬化合物去除，因而執行此步 驟。同時經由此步驟，可將鈦金屬層沉積於空白的晶圓之 上。 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） t— ί - - _ :1 m· n nn l·— (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局R工消费合作社印製 415029 A7 B7 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁) 而触刻後的處理製程（PET)，主要為去除光阻或殘餘 之聚合物的乾式钱刻程序，如果使用的氣體為氧氣，則利 用RF能量的激發，可產生充滿各種氧粒子的電漿，再藉 由反應性離子钱刻而將聚合物剝離。 (3)接著將此含有鈦金屬鍍層的空白晶圓取出，利用χ 光營光反射儀（TXRF)來測試其中的鈦金屬含量。 接著重複執行步驟（1)-(3) ’再利用X光繞射儀執行 測試’如果鈦金屬含量穩定而不再增加，則代表其已趨於 飽和狀態；但若金屬含量持續增加時，則可重複執行步驟 (1)-(3)，使反應器中之金屬含量達到飽和為止。 當上述之條件完成之後，則可接著進行後續之接觸窗 /介層窗的蝕刻製裎而完成本發明。 由於傳統之接觸窗/介層窗之蝕刻製程令，經常因為 鈦金屬之濺鍍解離而污染反應器配件，且並無較有效的方 法來解決此問題’本發明以相反的角度思考，先讓姑金屬 之含量飽和’再來進行後續的製程，因而免除了製程不穩 定的困擾。 經濟部智慧財產局員工消費合作社印製 同時本發明之製程條件處理，可在反應室更換碎元素 所製成的配件，或進行溼式清潔之後進行，以便重新調整 反應室之狀況。 而經由反應室中金屬濃度的飽和，反應室之製程參數 也因而變得穩定，如此則避免了先前所述之聚合物沉積於 本紙張尺度適用中國國家標準（CNS ) Μ規格（210X 297公釐） 415029 Α7 ________Β7_____ 五、發明説明（） 插塞底部或不確定之姓刻中止，而蝕刻底層的選擇比也會 趨於穩定’製程的重複性和產能穩定性將有明顯的改善。 (請先閲讀背面之注意事項再填寫本頁) 圓式簡單說明：415029 at B7 V. Description of the Invention () Field of the Invention The present invention relates to a dielectric layer etching process, and more particularly, to a method for stabilizing a dielectric layer etching process by using prior metal sputtering. C- Background of the Invention: In the semiconductor industry, when the integration degree of integrated circuits increases and the components shrink, the components cannot provide enough area to make electrical connections between the components, or interconnects. »Therefore, the design of two or more metal layers is a must. More complex components, such as microprocessors that perform logic operations, require multiple layers of metal to complete the connections between the various components. In the early multiple metallization processes, because the number of layers was not large, and the line width of the process was relatively loose, the metallization process was easier, and the planarization requirements of the dielectric layer were less stringent. However, as components become more dense, the Must meet the new process technology to meet the requirements. Multiple metallization process orders include so-called contact and via process technologies. The general contact window is used to directly contact the metal layer wires and the electrodes of the transistor components (such as titanium silicon silicide (TiSi2) at the gate, doped silicon at the source / drain, etc.), while the interlayer window is used To contact the upper and lower layers of different metals. "After the contact window plug and the via window plug are completed, the tungsten metal is deposited by LPCVD to form a tungsten plug and deposited by, for example, sputtering. High paper size applies to China's national kneading rate (CNS > Α4 pits (210 x 297 mm) (please read the notes on the back before filling out this page) ί-Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 415029 a7 ___B7 5. Description of the invention () Wen Ming and other methods are filled into the contact window / interlayer hole. (Please read the precautions on the back before filling in this page} And in order to make multiple metallization processes, the dielectric layer is leveled. The manufacturing process is also an important step. Before the first metal layer used as a contact window has been performed, a dielectric layer such as a BPsg layer deposited by a CVD method can be used at a temperature of 85 {rc to 95 (The rc is flattened at high temperatures, but if it is. After the aluminum-based metal layer is deposited, subsequent dielectric layers for insulation must be performed locally, such as by Spin On Glass (SOG) or Chemical Mechanical Polishing (CMP). Or a comprehensive flattening process to facilitate subsequent multiple metallization processes. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the dielectric layers such as contact windows and dielectric window etches. The slurry is dry-etched, such as the earliest carbon tetrafluoride (CF <) 'or the current C2h' C «Fe, etc., because silicon atoms (Si) and gas atoms (F) can form volatile silicon tetrafluoride (S 丨 F <), so hafnium fluoride is very suitable as a silicon dioxide dielectric layer etching plasma. Adding an appropriate amount of oxygen in the fluorinated carbon destruction can cause the number of fluorine atoms in the plasma to increase And further increase the etching rate of silicon dioxide ", but if argon is added, it will reduce the concentration of fluorine atoms and reduce the etching rate of silicon dioxide β. Therefore, the ratio of fluorine / carbon has a decisive influence on the plasma etching, and Also represents Etching reaction (dominated by fluorine atoms in the plasma) and polymer reaction (dominated by disk atoms in the plasma) are two types of plasma etching in parallel. The fluorine / carbon ratio can be determined by the above-mentioned oxygen and The allocation of hydrogen varies. In the engraving of the contact window, as described above, for example, the contact point with the silicided metal of the gate is usually stopped by tungsten silicide or titanium silicide. 3 This paper is applicable to China National Standard (CNS > A4 specification (210X297 mm) 415029 Α7 _ B7 V. Description of the invention () layer, or in the etching of the interlayer window, because the interlayer is etched between different metal layers, so often To etch a titanium nitride (TiN) anti-reflection layer (or barrier layer) 'or use a titanium nitride layer as an etch stop layer β Since titanium silicide or a nitride layer contains metallic titanium, when etching such a metal layer, During the reaction process, the metal will bond to the reaction chamber due to plasma etching and deposit and spread to the accessories of the reaction chamber, causing contamination of the reaction chamber accessories. C * An etching reactor commonly used today is an etching reactor called an inductively coupled high-density electric transistor (HDP), such as a dielectric layer etching reactor called an inductive plasma source (IPS) . A schematic diagram of such a reactor is shown in the first section. This example is taken from a reactor manufactured by Applied Materials, Inc. of Santa Clara, California, U.S.A. In this figure, 'except for the related components, other components are simplified. In the structure,' the silicon top plate composed of semiconductors is grounded ', and the appropriate impedance and thickness are selected in order to connect the induction coil 1〇 The axial RF magnetic field generated is transmitted to the reaction chamber to dissociate the reaction gas. The wafer 130 is placed on the cathode base and the appropriate bias power is applied to surround the silicon ring 120 next to the wafer 130. The heater array (not shown) controls the temperature of the silicon ring 120 and the silicon top plate. 110 has the function of capturing fluorine atoms from the fluorocarbon compound or the fluorine atom-based plasma in the reaction chamber. Therefore, these accessories also have the function of controlling the fluorine / carbon ratio, and at the same time can control the engraving rate of the reaction chamber. 》 However, during the engraving process of the contact window / interlayer window, the silicon top plate 110 or the sand ring 120 was contaminated by the metal titanium released by Meng Huaqin or the titanium nitride layer. The paper size is subject to the Chinese National Standard (CNS) Α4 specifications (210X297 mm) m · —1 —An tut n (Please read the notes on the back before filling out this page)-、 ΤΓ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs When making accessories such as 415029 at B7 5. Description of the invention (), titanium diffused into this accessory will affect its function of capturing fluorine atoms. Moreover, in addition to transmitting the RF magnetic field to dissociate the reactive gas to form a plasma, the silicon top plate 110 can also be used as a circuit for electrically grounding when the plasma is generated. The progress is smooth, so the pollution of the silicon top plate 110 will affect its impedance value, which will cause the process conditions to change. Such process changes can have many unexpected effects. For example, the polymer layer is deposited on the bottom of the contact window / via window plug, or it cannot be smoothly etched to the etch stop layer, or the selection ratio of the bottom layer is changed ... . In the past, when encountering such problems, engineers always tried to solve them with various process parameter changes, but they could not obtain stable process results. Therefore, there is a great need for a process method that can correct the process drift caused by metal materials contaminating the reactor parts in this etching process in order to obtain a reliable etching process. Object and summary of the invention: In view of the above-mentioned background of the invention, the conventional inductive plasma source (IPS) dielectric layer lithography reactor is etched to silicidation during the con tac t process. The titanium (T i S i 2) etch stop layer will vaporize titanium metal by plasma etching, or etch to the titanium nitride (T i M) etch stop layer during the via process. Paper size applies to Chinese national standard (CNS) Μ specification (210 × 297 mm)-^^ 1 I i tr _ ~ — ^^ 1 .1--t—. 本 ^^^ 1----(Please read the back first Please pay attention to this page, please fill in this page) 415029 A7 B7 V. Description of the invention () Titanium metal will also be produced when titanium nitride is removed. The titanium metal volatilized from this plasma etching process will pollute the accessories in the reactor. This makes the coupling efficiency of the RF electric mill low, or changes the electrical circuit parameters of the process, causing the process conditions to shift and fail to complete the etching, or the accumulation of polymer cannot be removed, and the etching selection ratio changes. Adverse effects of metal pollution The action 'therefore disclosed by the present invention is a plasma etching using wafers with titanium oxide and / or titanium nitride coating to saturate the titanium metal content in the reactor'. After confirming that the titanium metal content is saturated, Only subsequent processes are performed. Using the process provided by the present invention, it is summarized as follows: (1) First, crystals with titanium silicide and / or titanium nitride coating or patterned titanium oxide and / or titanium nitride coating are first used. The circle is placed in the reactor for sputtering, and the process conditions at this time can be the process conditions provided during the contact window / interlayer window engraving process, such as providing a reaction gas of GF *, and adding an appropriate amount of C0 And argon (Ar). (2) Remove the wafer with titanium silicide and / or titanium nitride coating, put in a blank silicon wafer, and perform the post-etching process (Post Etching). Treatment (PET), because titanium metal will diffuse into the reactor's accessories, in order to allow the various parameters of the reactor to reach a stable state 'and to remove the relevant weakly bonded titanium metal compounds, this step is performed at the same time through this step ,can The titanium metal layer is deposited on the blank wafer. The paper size is applicable to China National Standard (CNS) A4 (210X297 mm) t— ί--_: 1 m · n nn l · — (Please read first Note on the back then fill in this page) Order printed by the Ministry of Economic Affairs Intellectual Property Bureau R Industrial Consumer Cooperative Co., Ltd. 415029 A7 B7 V. Invention Description () (Please read the notes on the back before filling out this page) The processing process after engraving (PET), mainly a dry money engraving process to remove photoresist or residual polymer. If the gas used is oxygen, then RF energy can be used to generate a plasma filled with various oxygen particles, and then reactive ions are used. Money cuts the polymer off. (3) Next, take out the blank wafer containing the titanium metal plating layer, and test the titanium metal content by using a x-ray optical reflectometer (TXRF). Then repeat steps (1)-(3) 'Re-use the X-ray diffractometer to perform the test'. If the titanium metal content is stable without increasing, it means that it has become saturated; but if the metal content continues to increase, then Steps (1)-(3) can be repeatedly performed until the metal content in the reactor reaches saturation. After the above conditions are completed, the subsequent etching of the contact window / interlayer window may be performed to complete the present invention. Due to the traditional etching process of contact window / interlayer window, the reactor parts are often contaminated due to the sputtering dissociation of titanium metal, and there is no effective method to solve this problem. The content of the metal is saturated, and then the subsequent process is performed, thereby eliminating the problem of unstable process. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs At the same time, the process conditions of the present invention can be processed in the reaction chamber by replacing the parts made of broken elements or after wet cleaning in order to readjust the condition of the reaction chamber. And through the saturation of the metal concentration in the reaction chamber, the process parameters of the reaction chamber have become stable. This avoids the previously mentioned polymer deposition on this paper. The Chinese National Standard (CNS) M specification (210X 297 mm) is applicable. ) 415029 Α7 ________ Β7 _____ 5. Description of the invention () The bottom of the plug or the indeterminate surname is engraved, and the selection ratio of the etching bottom will also stabilize. The repeatability of the process and the stability of production capacity will be significantly improved. (Please read the notes on the back before filling this page)
C 本發明的較佳實施例將於往後之說明文字中輔以下列 圖形做更詳細的闡述： 第一圖為感應式電漿源介電層蝕刻反應器的截面視 圃， 第二圖為依照本發明使反應器中之鈦金屬飽和化之图 不，及 第二圖為多重金属化製程中形成接觸窗/介層窗之電 晶體元件的截面視圖。 發明詳細說明： 經濟部智惡財產局員工消费合作杜印製 由於電漿反應中反應室内的矽或氡化物配件對反應製 程有程度不一的影響，為了要得到具重複性及信賴度的製 程條件’在反應時保持這些配件的潔淨度是很重要的課 題。然而’在介電層之蝕刻中’例如在蝕刻形成接觸窗 (contact)時’會以矽化鈦（TiSi〇做為蝕刻中止層；或者 在形成介層窗（via)時，會以氮化鈦（ΤίΝ)做為蝕刻中止層 或必需將氮化鈦層移除。當矽化鈦或氮化鈦曝露於電漿中 本纸張逍用巾國圏家揉牟（公4 ) ---- Α7 Β7 415029 五、發明説明（） 時將揮發至反應室中而污染配件，進而產生製裡的不確定 性。 為了解決此製程的問題’本發明先行濺链矽化鈦和/威 氮化鈦薄膜，讓反應室中的製程條件趨於穩定，之後再進 C 行介電層蝕刻製程。由於本發明之步驟已將鈇金屬擴散刻 配件中的情形考慮到整個製程中，因而實際進行介電層蝕 刻時’不再因為独刻中止層内所含的鈦金屬揮發到反應室 中而影響製程。至於本發明之詳細說明則如下所述： 現在常用的介電層蝕刻反應器為一種稱作感應耦合 式南在’度電衆（inductivily coupled high-density plasma, HDP)的蝕刻反應器，此類反應器提供了選擇比和 製程的彈性以滿足不同的需求。例如一種稱作感應式電漿 源（Inductive Plasma Source, IPS)之介電層蚀刻反應器 即可調整和控制電漿密度及離子能量，以增強乾式蝕刻的 非等向性、選擇比、姓刻速度等。此類介電層蝕刻反應器 則如第一圖中所示β 於第一圖中所示的感應式電漿源蝕刻反應器中，矽頂 板110和矽環120為反應器中影響製程條件的主要配件 之一。因為矽頂板110具接地端而可造成電性之迴路，其 阻抗值之大小可影響接地性和電性耦合，而有溫度控制的 碎環1 2 0則可影響蝕刻的速率。為了要降低此類矽化物或 氧化构反應室配件的影響，在愈趨精密的半導體製程中， 本纸張尺度逋用中國國家樣準（CNS ) A4規格（210X297公釐） ^1- ^ίι J- - n^i— H ^^^1 ^1 广锖先閱读背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消费合作社印製 415029 A7 £7_ 五、發明説明（） 各種製程條件都必需小心考慮。 首先’利用矽化鈦和/或氮化鈦濺鍍製程來進行金屬層 之蝕刻。於第一圖中晶圓1 3 0之位置上，放入只有矽化鈦 和/或氮化欽鍵層之晶圓（blank wafer)，或是圖案化之梦 化鈦和/或氮化鈦鍍層之晶圓亦可。利用電漿裏所產生的離 子對晶片表面薄膜進行轟擊蝕刻，或藉由離子與薄膜間的 化學反應將曝露在電漿中的矽化鈦和/或氮化鈦薄膜，反應 成揮發性的生成物。 於此步驟中，可利用原本蝕刻接觸窗/介層窗插塞之蝕 刻製程為之。例如’利用約10 sccm到約18 seem之C<F* 氣趙’形成氣化破電敦來進行轴刻’並加上約1 〇 s C C10之 CO和約420 seem之Ar參與反應*同時加上i〇〇〇Watt左 右之RF供應電壓，及i5〇〇Watt左右之偏壓功率。 由於欽金屬會擴散到反應室的石夕材配件中，因此經過 適當的時間之後’即可停止此步驟，而進行蝕刻後之處理 (Post Etching Treatment，PET)步驟。 於此步驟中’先將該矽化鈦和/或氮化鈦之晶圓取出， 放入只有發材之空白晶圓（bar e wa f er )，再進行上述之轴 刻後之處理步驟。一般於介電層蝕刻時，當完成主蝕刻步 驟之後，都會執行類似之步驟，以便將蝕刻完成之後的光 阻層剝離，或將殘餘之聚合物加以去除。而常用的去除光 阻乾式蝕刻程序，則使用氧氣產生的電漿，以反應性蝕刻 本纸張尺度迫用中國國家標準（CNS ) A4規格（210χ297公釐） ------------"------訂------i (請先閲讀背面之注意事項再填寫本頁) 415029 Α7 Β7 i、發明説明（) 技術形成CO’ C〇2和ΗζΟ等氣趙（光阻和聚合物皆為碳氣化 合物），再藉由電续反應器的真空系統加以柚離。 而本發明之蝕刻後處理步驟，則另有一目的β由於妖 金屬會和矽材所組成之元件反應，進而擴散到石夕材中，影 響半導想麥材之阻抗特性。但是在第一個步驟之$夕化欽及/ c 或氮化欽的濺鍵程序裏’揮發性之級金屬可能未完全和石夕 起反應，或者反應後鍵結並不完全，因此利用此處理步驟， 可以製程氣體t的氧離子將較弱的鍵結去除。 當經歷此蝕刻後處理步驟之後，原來反應室中的金屑 鈦將擴散到空白矽晶圓中’形成較穩定的鍵結狀態，通常 亦稱此步棘為暖機步规（conditioning)。 接著將此片含有鈦金屬的空白晶圓取出，利用X光螢 光反射儀（Total X-ray Reflected Fluorescent, TXRF) 來檢查鈦金屬的含量> 如第二圖中所示的圖形中，橫座標為時間，縱座標則 為鈦金屬的濃度。當利用上述的矽化鈦和/或氮化鈦之晶園 執行濺鍍，再進行蝕刻後處理的暖機程序，然後以X光繞 射儀檢查鈦金屬之含量後，可以得到鈦金屬之濃度β接著 重複上述的步驟，再測試鈦金屬的含量，即可得出第二圖 所示之曲線。當重複上述的循環步驟，得到逐漸增加的濃 度值時，表示鈦金屬在反應室中的濃度尚未飽和，如此則 必需重複此循環步驟。一直到鈦金屬濃度趨於穩定不再增 本紙張尺度適用中國國家標準（CNS ) Α4规格（210X297公釐） 知-- (請先閲讀背面之注意事項再填寫本頁) -'• 經濟部智慧財產局員工消費合作社印製 415029 Α7 Β7 五、發明説明（） 加之後，表示其含量已達飽和肽能，即π μ ,,, < f狀態，則可停止此循環步驟， 進行實際的蝕刻製程。 參閱第三圖，此®中所示即為M〇s電晶體之多層金屬 化的截面視圓。於此圄中的電晶體閉極、源（汲）極均已形 成於底材300之上，接著利用上述已經過處理的IPS介電 層蝕刻反應器進行金屬化製程。圖中在以例如BPSG之介電 層形成於電晶艎之上且平坦化之後，則接著於閘極之上蝕 刻接觸窗插塞310且在源極（汲極）之上形成插塞32〇，再 填入鎢插塞或高溫銘等材料β然後，鋁合金之類的金屬層 330及第二層介電層形成之後，再蝕刻形成介層窗插塞 340。之後，以相同的方法重複的進行介電層的平坦化，插 塞和内連線的製程等步驟而完成本發明。 上述之接觸窗/介層窗插塞之蝕刻製裎中，於主要的飪 刻之前先行濺鍍矽化鈦和/或氮化鈦層使得反應器之製程 條件穩定化。此些步驟雖然增加了製程的複雜性，但是經 過這些步驟之後，反應器中已具有飽和的金屬，因而其中 的矽材質配件如矽頂板和矽環中的阻抗變化也趲於穩定， 不再受制於製程中金屬污染所引發的後續問題，製程的漂 移現象得到相當程度的改善^於製程中也不再有殘留的聚 合物，同時不可靠的蝕刻中止也不再發生，蝕刻底層之選 擇比更趨於穩定。諸如此類的製程改善，不但改善了製程 的重複性，更可增加產能。 泰紙張尺渡遑用中國國家揉準（CNS ) Α4规格（210X297公釐） (請先閱讀背面之注意^項再填寫本頁) -IV. 訂 經濟部智慧財產局員工消黄合作社印製C The preferred embodiment of the present invention will be described in more detail in the following explanatory text with the following figures: The first picture is a cross-sectional view of an inductive plasma source dielectric layer etching reactor, and the second picture is A diagram of saturating titanium metal in a reactor according to the present invention, and a second diagram is a cross-sectional view of a transistor element forming a contact window / via window in a multiple metallization process. Detailed description of the invention: Consumption cooperation between employees of the Intellectual Property Office of the Ministry of Economic Affairs and Du Duan Printing. As the silicon or hafnium accessories in the reaction chamber in the plasma reaction have varying degrees of influence on the reaction process, in order to obtain a repeatable and reliable process Conditions' maintaining the cleanliness of these components during the reaction is an important issue. However, in the "etching of the dielectric layer", for example, when a contact window is formed by etching, titanium silicide (TiSi0) is used as an etching stop layer; or when a via is formed, titanium nitride is used. (ΤίΝ) is used as an etching stop layer or the titanium nitride layer must be removed. When titanium silicide or titanium nitride is exposed to the plasma, this paper is used for towels. (National 4) ---- Α7 Β7 415029 5. In the description of the invention (), it will volatilize into the reaction chamber and contaminate the parts, which will cause uncertainty in the manufacturing process. In order to solve the problem of this process, 'The present invention firstly sputters chain titanium silicide and / titanium nitride films, The process conditions in the reaction chamber are stabilized, and then the dielectric layer etching process is performed in C. Since the steps in the present invention have taken the situation in the rhenium metal diffusion engraving parts into the entire process, the dielectric layer etching is actually performed Shi 'no longer affects the process because the titanium metal contained in the stop layer is volatilized into the reaction chamber. The detailed description of the present invention is as follows: The commonly used dielectric layer etching reactor is a type called inductive coupling Shi Nan in 'Dian Dian Zhong inductivily coupled high-density plasma (HDP) etching reactor, this type of reactor provides the flexibility of selection ratio and process to meet different needs. For example, a medium called Inductive Plasma Source (IPS) The electric layer etching reactor can adjust and control the plasma density and ion energy to enhance the anisotropy, selection ratio, and engraving speed of dry etching. Such a dielectric layer etching reactor is as shown in the first figure Shown β In the induction plasma source etching reactor shown in the first figure, the silicon top plate 110 and the silicon ring 120 are one of the main accessories affecting the process conditions in the reactor. The silicon top plate 110 can be caused by the grounding terminal. For electrical circuits, the size of the impedance can affect the grounding and electrical coupling, and the temperature-controlled broken ring 1 2 0 can affect the etching rate. In order to reduce the silicide or oxidation reaction chamber accessories Impact, in the increasingly sophisticated semiconductor manufacturing process, this paper uses China National Standard (CNS) A4 (210X297 mm) ^ 1- ^ ίι J--n ^ i— H ^^^ 1 ^ 1 Hiroyuki read the note on the back first Matters then fill out this page) Order Ministry of Economic Affairs Intellectual Property Office employees consumer cooperatives print Ministry of Economic Affairs Intellectual Property Office employees consumer cooperatives printed 415029 A7 £ 7_ V. invention is described in () various process conditions are required careful consideration. First, the metal layer is etched using a titanium silicide and / or titanium nitride sputtering process. At the position of wafer 130 in the first figure, put a blank wafer with only titanium silicide and / or nitride bond layer, or patterned dream titanium and / or titanium nitride coating. Wafers are also available. Use the ions generated in the plasma to bombard the film on the wafer surface, or use the chemical reaction between the ions and the film to expose the titanium silicide and / or titanium nitride film in the plasma to react into volatile products. . In this step, an etching process that originally etches the contact window / via window plug can be used. For example, 'Using about 10 sccm to about 18 seem of C < F * Qi Zhao' to form gasification and breaking electricity for shaft cutting ', and add about 10 s C C10 CO and about 420 seem Ar to participate in the reaction * simultaneously Add the RF supply voltage of about 10,000 Watt and the bias power of about 5,000 Watt. Since Chin metal will diffuse into the stone material parts of the reaction chamber, after an appropriate time, this step can be stopped and a Post Etching Treatment (PET) step can be performed. In this step ', the titanium silicide and / or titanium nitride wafer is taken out first, and a blank wafer (bar e wafer) containing only hair material is placed, and then the above-mentioned processing steps after the shaft incision are performed. Generally, when the dielectric layer is etched, after the main etching step is completed, a similar step is performed to peel off the photoresist layer after the etching is completed or to remove the residual polymer. The commonly used photoresist dry etching process uses a plasma generated by oxygen to etch the paper size reactively using the Chinese National Standard (CNS) A4 specification (210 x 297 mm) --------- --- " ------ Order ------ i (Please read the notes on the back before filling this page) 415029 Α7 Β7 i 、 Invention () Technology forms CO 'C〇2 and ΗζΟ Wait for gas Zhao (photoresist and polymer are both carbon gas compounds), and then remove it by vacuum system of electric continuous reactor. In the post-etching process of the present invention, β has another purpose. Because the demon metal reacts with the element composed of silicon material, and then diffuses into the stone material, it affects the impedance characteristics of the semiconducting wheat. However, in the spattering procedure of the first step of the oxidized and / c or nitrided cyanide bonds, the 'volatile metals may not completely react with Shi Xi, or the bonding is not complete after the reaction, so use this treatment In the step, the weak ions can be removed by the oxygen ions of the process gas t. After going through this etching post-processing step, the original gold scrap titanium in the reaction chamber will diffuse into the blank silicon wafer 'to form a more stable bonding state. This step is also commonly referred to as the conditioning step. Then take out this blank wafer containing titanium metal, and use an X-ray fluorescent reflectometer (Total X-ray Reflected Fluorescent, TXRF) to check the titanium content > As shown in the second figure, the horizontal The coordinates are time, and the ordinate is the concentration of titanium. When the above-mentioned titanium silicide and / or titanium nitride crystal garden is used to perform sputtering, and then perform a warm-up program for post-etching treatment, and then check the content of titanium with an X-ray diffractometer, the titanium concentration β can be obtained. Then repeat the above steps, and then test the titanium content, you can get the curve shown in the second figure. When the above-mentioned cycle step is repeated and a gradually increasing concentration value is obtained, it means that the concentration of titanium metal in the reaction chamber has not been saturated, so it is necessary to repeat this cycle step. Until the concentration of titanium metal stabilizes, the paper size will no longer increase. The paper size applies the Chinese National Standard (CNS) Α4 specification (210X297 mm). Know-(Please read the precautions on the back before filling this page)-'• Ministry of Economy Wisdom Printed by the Consumer Affairs Cooperative of the Property Bureau 415029 Α7 Β7 5. After the description of the invention (), it indicates that its content has reached the saturated peptide energy, that is, π μ ,,, < f state, you can stop this cycle step and perform the actual etching Process. Referring to the third figure, the cross-section view of the multilayer metallization of the Mos transistor is shown in this ®. The transistor's closed and source (drain) electrodes have been formed on the substrate 300, and then the metallization process is performed by using the above-mentioned processed IPS dielectric layer etching reactor. In the figure, after a dielectric layer such as BPSG is formed on the transistor and planarized, the contact window plug 310 is then etched over the gate electrode and a plug 32 is formed over the source (drain). Then, a material β such as a tungsten plug or a high temperature inscription is filled. Then, after a metal layer 330 such as an aluminum alloy and a second dielectric layer are formed, an interlayer window plug 340 is formed by etching. After that, the steps of planarizing the dielectric layer, the process of the plug and the interconnection are repeated by the same method to complete the present invention. In the above-mentioned etching process of the contact window / interstitial window plug, the titanium silicide and / or titanium nitride layer is sputtered before the main cooking to stabilize the process conditions of the reactor. Although these steps increase the complexity of the process, after these steps, the reactor already has a saturated metal, so the impedance changes in the silicon accessories such as the silicon top plate and the silicon ring are also stable and are no longer controlled In the subsequent problems caused by metal contamination during the process, the drift phenomenon of the process has been improved to a considerable degree. There is no longer any residual polymer in the process, and unreliable etching stops no longer occur. becoming steady. Process improvements such as these not only improve process repeatability, but also increase production capacity. Thai paper ruler is used in China National Standard (CNS) Α4 size (210X297 mm) (Please read the note on the back ^ before filling out this page) -IV. Order Printed by the Yellow Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs