413857 A7 五、發明説明（) t明領域： 本發明係關於一種底部抗反射層的製程方法，特別是 關於一種利用電漿聚合的技術來形成底部抗反射層的方 法，並且更關於一種利用電漿聚合技術來調整不同η和让 值的底部抗反射層的方法。 發明皆熹： 在超大型積體電路元件的製造的過程中， 小的區間必須植入大量的元件，以及各個元件 關係都必須非常精確，故對光圖案的精確度的 越嚴格。當晶片中的元件量遽增之後，在超大 中的線寬也必須隨之縮小其尺寸。然而，隨著 反射性之半導體材料的使用，例如：複晶矽、 金屬等，這些材料將使得微影成像精確度產生 從下層物質所產生非預期的反射光，將會嚴重 刻的圖刻結果。尤其在波長範圍在紫外線或深 域影響更明顯。這樣結果將限制積體電路製程 經濟部智慧財產局員工消費合作社印製 由於在一微 之間的連結 要求也越來 型積體電路 大量的具有 銘，以及石夕 問題。其中 的干擾光圖 紫外線的區 發展。 所以，一般會利用一抗反射層來克服此一問題。而影 響此抗反射效果的因素主要有：抗氧化層的厚度，以及其 光學性質（opt i ca 1 character )。而其中光學性質更包 含兩個參數：折射率n (reflection index)以及阻光率 k (extinction coefficient)。而抗反射層的厚度、光 學性質則受材料種類 '配方等的影響。 H2S- (請先閱讀背面之注ί項再填寫本買) 本紙張尺度適用中國國家梯準（CNS > A4規格（210X297公釐） 經濟部智慧財產局員工消費合作社印製 413857 A7 A7 _______B7__ 五、發明説明（） 其次，有關抗反射層的種類包含有：無機抗反射層 (Inorganic anti-reflection layer)，例如：氮氧化 矽（SiOxNy)，係一般用於抗深紫外線波長範圍的材料。 其形成方法如：利用通入適當的氣體SiH<、NzO ;並控制其 流迷、沈積速率，再加上利用電漿增強的方式來形成氮氧化矽的抗 反射層。但又關氮氧化矽的抗氧化層其最大的缺點是：在圖刻結束 後不易移除’以及不易形成在有機膜層之上。此外，也有利用有機 底層抗反射層來解決因為光阻材料的反射光線。在西元1992年的 SPIE vol. 1674 的 Optical/Laser Microlithography V 期刊之 中’從第350到361頁，Yurika Suda等人公開一篇論文，標題 為 A New Anti-reflective Layer for Deep UV lithography"。 在這篇論文之中’在次微米與波長248微米的Krp準分子雷射的微 影製程之中，使用一抗反射層（anti_relfective layer, ARL),其 優點包括具有較佳的臨界尺寸（(；1_11;丨(；；31(1丨11161151〇11，（：]),)。在 光阻層之下的a-C:Η抗反射層被發現具有較佳的條件，而且此種抗 反射層為有機材料，能夠與光阻層同時被去除β並且，因為具有高 的曝光與聚焦深度，此種抗反射層常用在單一光阻之準分子 雷射微影製程之中。有機抗反射層具有平坦化的效果，非常適於使 用於微影製程之中’但是對不同厚度的抗反射層，是非常不容易加 以钮刻。 故:種具有可調之光學性質（阻光率k和折射率）的底層抗反 射層材料並且可均勻的形成在半導體基材之上，以及可以使用習 知的乾触刻製程將底層抗反射塗覆材枓從半導體基材或膜廢表面 h «移除’ 7J是光微影技術巾不可或缺的材料及技術。 發明目的及概诚： 本紙張繼用侧家標準-- (請先聞讀背面之注意事項再填寫本頁)413857 A7 V. Description of the Invention (1) Field of the Invention: The present invention relates to a method for manufacturing a bottom anti-reflection layer, in particular, a method for forming a bottom anti-reflection layer using a plasma polymerization technique, and more particularly, to a method using electricity A slurry polymerization technique to adjust the bottom anti-reflection layer with different η and yield values. The inventions are as follows: In the manufacturing process of very large integrated circuit components, a large number of components must be implanted in a small interval, and the relationship between each component must be very accurate, so the accuracy of the light pattern is stricter. When the number of components in the wafer increases, the line width in the oversized must also be reduced accordingly. However, with the use of reflective semiconductor materials, such as polycrystalline silicon, metals, etc., these materials will make lithographic imaging accuracy produce unexpected reflected light from the underlying material, which will severely engrav the results. . Especially in the wavelength range, the influence is more obvious in the ultraviolet or deep regions. As a result, the integrated circuit manufacturing process will be limited to printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. As a result of the connection between one micro-type, the requirements of integrated circuits are increasing, as well as the problems of Shi Xi. One of the disturbing light patterns is the development of the ultraviolet region. Therefore, an anti-reflection layer is generally used to overcome this problem. The factors that affect this anti-reflection effect are: the thickness of the anti-oxidation layer, and its optical properties (opt i ca 1 character). The optical properties include two parameters: the refractive index n (reflection index) and the light resistance k (extinction coefficient). The thickness and optical properties of the anti-reflection layer are affected by the type of material and the formulation. H2S- (Please read the note on the back before filling in this purchase) This paper size is applicable to China National Standard (CNS > A4 size (210X297 mm)) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 413857 A7 _______B7__ 5 2. Description of the invention () Secondly, the types of anti-reflection layer include: inorganic anti-reflection layer (Inorganic anti-reflection layer), such as: silicon oxynitride (SiOxNy), which is generally used for materials in the deep ultraviolet wavelength range. The formation method is as follows: using appropriate gas SiH <,NzO; and controlling its flow rate and deposition rate, and using a plasma enhancement method to form an anti-reflection layer of silicon oxynitride. The biggest disadvantages of the anti-oxidation layer are: it is not easy to remove after the engraving, and it is not easy to form on the organic film layer. In addition, there is also an organic bottom anti-reflection layer to solve the reflected light due to the photoresist material. In 1992, In the Journal of Optical / Laser Microlithography V of SPIE vol. 1674, 'From pages 350 to 361, Yurika Suda et al. Published a paper entitled A New Anti-re flective Layer for Deep UV lithography " In this paper, 'in the sub-micron and 248 micron wavelength Krp excimer laser lithography process, an anti_relfective layer (ARL) is used. Its advantages include Has better critical dimensions ((; 1_11; 丨 (;; 31 (1 丨 11161151〇11, (:]),). The aC: Η anti-reflection layer under the photoresist layer was found to have better conditions Moreover, this anti-reflection layer is an organic material, which can be removed at the same time as the photoresist layer. Because of its high exposure and focus depth, this anti-reflection layer is often used in the excimer laser lithography process of a single photoresist. Medium. The organic anti-reflection layer has a flattening effect and is very suitable for use in lithographic processes. However, anti-reflection layers of different thicknesses are not easy to be engraved. Therefore: a kind of tunable optical properties ( Material of the bottom anti-reflection layer and can be uniformly formed on the semiconductor substrate, and the bottom anti-reflection coating material can be removed from the semiconductor substrate or film by a conventional dry-touch engraving process. Waste surface h «moving Except for ‘7J, which is an indispensable material and technology for photolithography technology towels. Purpose of the invention and sincerity: This paper continues to use the standard of home use-(Please read the precautions on the back before filling this page)
413857 A7 經濟部智慧財產局員工消費合作钍印製 Β7 五、發明說明（) ... , ΐ. 本發明之目的係提每一種底部抗反射層（BARC )的製 程配方；並且利用此配方來生成一具有可調光學性質n、k . 的底部抗反射層。 本發明關於一種在半導體製程中形成一底部抗反射 層的方法，並且更關於一種形成可調光學性質n、k之底 部抗反射層的方法；此外本發明更關於利用電增強聚合的 方式形成一具有可調光學性質n、k之底部抗反射層的方 法。在沈積底部抗反射層的配方中，包含數種有機氣體， 其中更包含至少一種含有溴原子（Br )的氣體，例如：溴 化氫（HBr)、有機溴化烷（CnHaBrbX2n-a-b+2，其中 ngl) 等有機溴化物之氣體。透過此含溴原子之氣體，可以有效 的提此底部抗反射層之高阻光率k以及折射率η ;此外， 改變此含溴原子之氣體的比率可以的到不同質之阻光率k 以及折射率η，而此底部抗反射層並具有一般有機底部抗 反射層之平坦化極易於移除之優點，同時兼顧氮氧化矽材 料之高阻光率k和高折射率η之優點。至於此底部抗反射 層之厚度除了透過調整配方 '流速、沈積速率之外，並可 利用調整電漿輸出功率的大小控制之。 1式簡JI·銳昍: 第1圖為本發明中製成底部抗反層的流程圓。 第2圖為本發明中在半導體基材上形成抗反射層的剖面 圖0 .第4頁 本紙張尺度適用中國國家標準（CNS)A4規格（2ι〇,χ297公釐) (諳先閲讀背¾之生意事項再填寫本頁) ¾—----訂---------線 . 413857 A7 B7 五、發明說明（） 發明詳細説明_· {琦先閱讀背面之注意事項再填寫本頁) 本發明揭露一種在製程反應室或化學氣相沈積反應室之中，在 基材表面形成底部抗反射層的方法。且本發明揭露在製程反應室或 化學氣相沈積反應室之中，沈積底部抗反射層的配方α在配方中的 反應氣體包含數種氣體’如：摘帶氣體（carrier gas)與混合氣體 (mixture gas)’或者單獨使用一種有機画化物（organichalide)。 其中樓帶氣體為氦氣（He)或氮氣（N2);而有機鹵化物則包含由 鹵素原子、碳原子與氫原子所组成之化合物；且其中之南素元素為 氣、氣和ί臭原子。除此之外，在配方中清楚定義在反應宣之中的工 作壓力與施加於反應室的功率》 經濟部智慧財產局員工消費合作社印製 下面將詳述如何形成可調光學性質n、k之底部抗反射層 的方法。第1圖所示為本發明之底部抗反射層至程的流程 圖《本發明至少包含的步驟有：首先，將一基材202至入 製程室中S100;而且在基材202置入製程室後，基材並進 行其它的製程步騍，並至少形成一需要進行光蝕刻的膜 層。接著，通入反應氣體至製程室中S102»然後，一用來 增強製程反應的感應電漿即被啟動S1 04。其中，感應電漿 所提供之功率範圍約在100至1900瓦特之間，以及提供 製程室一功率在〇至500瓦特之間的偏壓。反應氣體在製 程室中透過電漿的增強效應，並在基材上沈積一底部抗反 射層S106。最後，在此底部抗反射層之上並形成一光阻層 S108。這樣的製程步驟在每次的光蝕刻反應中都需要被應 用到。 在半導體基材2 02置入製程室後，反應即在製程室中 第5頁 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 413857 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 反應。第2圖所示為在半導體基材202上形成一可調光學 性質n、k之底部抗反射層的步驟。如第2圖所示：一膜層 204形成在半導體基材202之上，此膜層204將在下列的步驟之中 被綠刻。一抗反射層206沈積在膜層204之上，利用高速旋塗方式， 在抗反射層206之上形成光阻層208 »因為抗反射層206在光阻層 208.之下’此抗反射層206作為光阻層208的底部抗反射層。在光 陴層208上形成圖案的微影製程令，底部抗反射層2〇6會減少從膜 層204與基# 202的反射光線，微影製程將在光阻層208之中形成 圖案’此圖案具有準直的形狀，而且可以有效控制膜層204上之圖 案的絕對尺寸》 在本發明之一較佳實施例中，所使用之反應氣體配方 包有機鹵化物氣體、溴化氩（HBr )或有機溴化合物 (organic bromide )以及攜帶氣體。以溴化氫為例，溴 化氩的氣體注入反應室的流速為1至200 seem之間；而有機卤化 物為CH2F2氣體注入反應室的流速係介於1到200 seem之間。 在本發明之另一較佳實施例之中，所示用之配方具有混合氣 體包含CHF3、CHaF、CMz、CzFe、CzHFs與C而的任意混合氣體，以 及溴化氫。其中溴化氫的氣體注入反應室的流速為1至200 seem 之間；而CHF3氣體注入反應室的流速係介於〇到200 seem之間， CHaF氣體注入反應室的流速係介於〇到200 seem之間，ChF2氣體 注入反應室的流速係介於〇到200 seem之間，CaF6氣體注入反應室 的流速係介於0到200 seem之間，CzHFs氣體注入反應室的流速係 介於0到200 seem之間，CaFb氣體注入反應室的流速係介於0到 200 seem之間。同樣的，在本實施例中有機溴化合物亦可取代其中 的漠化氫。 第6頁 本紙張尺度適用中國國家標準（CNS〉A4規格（21〇 X 297公楚） (諳先閱讀背面之注意事項再填寫本頁) ^----Γ----訂---------線 一^"} · 413857 A7 ____ B7 五、發明說明（） 此外’本發明之實施例中’形成底部抗反射層的配方中，透 過改變主入之溴化氫或有機溴化合物的流速，可以得到具有不同光 學性質n、k的底部抗反射層。溴化氫或有機溴化合物之流速在〇 和200 seem之間變化可以得到折射率n在丨.4和L 9之間，以及 阻光率k在0. 04和0· 5之間。如此透過改變注入之溴化氫和有機 溴化合物的比率可以得到可調光學性質η、之底部抗反射 層。 本發明之可調光學性質n、k底部抗反射層具有類似於氮氧化 矽抗反射層的良好沈積均勻性，而且在圖案定義之後，可以像有機 抗反射層一樣很容易被去除。在波長248nm的光線之下，本發明之 可調光學性質η、k底部抗反射層的反射率n為丨· 4至h 9之間， 在相同的情況之下’複晶石夕材料的反射率為47% ;且其阻光率让值 可以輕易的20.2, _般阻光率之較佳的範圍為最好必須大於 〇. 15 ’故相較一般的需求，本發明可以達到需要。值得注意的是， 可調光學性質n、k底部抗反射層材料在248nm波長的光線下，具 有較低的反射率，所以本發明之可調光學性質n、k底部抗反射層 材料，對於波長為193mn的光線，應該也會具有較低的反射率β 本發明係揭露一種利用電漿增強的方法形成可調光學性質 n'k底部抗反射層的方法，在化學氣相沈積反應室之中.，利用本發 明所揭露的沈積配方’在半導體基材上形成一可調光學性質n、k 底部抗反射層。在本發明之中，更可以使.用附加製程，對已沈積之 可調光學性質η、k底部抗反射層圊案進行後熱處理製程，以加熱 方式對可調光學性質n、k底部抗反射層圖案進行焦化處理，進一 步降低可調光學性質n、k底部抗反射層對光線的反射率，增強抗 第7頁 (清先.閲讀背面之生意事項再填寫本頁) )裝---Γ ---—訂---------線. 經濟部智慧財產局員工消費合作社印製413857 A7 Consumption cooperation with employees of Intellectual Property Bureau, Ministry of Economic Affairs 钍 Printed B7 V. Description of the invention () ..., ΐ. The purpose of the present invention is to provide a process formula for each bottom anti-reflection layer (BARC); and use this formula to A bottom anti-reflection layer with tunable optical properties n, k. The invention relates to a method for forming a bottom anti-reflection layer in a semiconductor process, and more particularly to a method for forming a bottom anti-reflection layer with tunable optical properties n and k. In addition, the present invention relates to forming a Method for bottom anti-reflection layer with adjustable optical properties n, k. The formulation of the anti-reflection layer at the bottom of the deposit contains several organic gases, including at least one gas containing a bromine atom (Br), such as: hydrogen bromide (HBr), organic bromide (CnHaBrbX2n-a-b + 2. Among them, ngl) and other organic bromide gases. Through the bromine atom-containing gas, the high light-resistance k and the refractive index η of the bottom anti-reflection layer can be effectively improved; in addition, changing the ratio of the bromine atom-containing gas can achieve different light-resistance k and The refractive index η, and the bottom anti-reflection layer has the advantage that the planarization of the general organic bottom anti-reflection layer is very easy to remove, and at the same time, the advantages of the high light resistance k and the high refractive index η of the silicon oxynitride material are taken into consideration. As for the thickness of the bottom anti-reflection layer, in addition to adjusting the formula 'flow rate and deposition rate, it can be controlled by adjusting the output power of the plasma. Type JI Jian Rui: Figure 1 shows the circle of the bottom anti-reflective layer in the present invention. Figure 2 is a cross-sectional view of the formation of an anti-reflection layer on a semiconductor substrate in the present invention. Page 4 This paper is sized to the Chinese National Standard (CNS) A4 (2, 297 mm) (谙 Read first back ¾ For business matters, please fill out this page again) ¾ —---- Order --------- line. 413857 A7 B7 V. Description of the invention () Detailed description of the invention _ {Read the notes on the back before filling in This page) discloses a method for forming a bottom anti-reflection layer on a substrate surface in a process reaction chamber or a chemical vapor deposition reaction chamber. In addition, the present invention discloses that in the process reaction chamber or the chemical vapor deposition reaction chamber, the formula α for depositing an anti-reflection layer at the bottom includes several gases in the formula, such as a carrier gas and a mixed gas ( mixture gas) 'or a single organicichalide. The floor gas is helium (He) or nitrogen (N2); and organic halides include compounds consisting of halogen atoms, carbon atoms, and hydrogen atoms; and the southern elements are gas, gas, and odorous atoms. . In addition, the working pressure in the reaction declaration and the power applied to the reaction chamber are clearly defined in the formula. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The following will describe in detail how to form the bottom of the adjustable optical properties n and k. Method of anti-reflection layer. Figure 1 shows the flow chart of the bottom anti-reflection layer of the present invention. "At least the steps of the present invention include: first, a substrate 202 is introduced into the process chamber S100; and the substrate 202 is placed in the process chamber. Then, the substrate is subjected to other process steps, and at least one film layer to be photo-etched is formed. Next, the reaction gas is introduced into the process chamber S102 ». Then, an induction plasma for enhancing the process reaction is activated S104. Among them, the power range provided by the induction plasma is between 100 and 1900 watts, and a bias voltage between 0 and 500 watts is provided in the process chamber. The reaction gas passes through the enhancement effect of the plasma in the process chamber, and a bottom anti-reflection layer S106 is deposited on the substrate. Finally, a photoresist layer S108 is formed on the bottom anti-reflection layer. Such a process step needs to be applied in each photoetching reaction. After the semiconductor substrate 202 was placed in the process room, the response was in the process room. Page 5 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 413857 Employees ’Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Printing A7 B7 V. Description of the invention () Reaction. FIG. 2 shows a step of forming a bottom anti-reflection layer on the semiconductor substrate 202 with adjustable optical properties n and k. As shown in Fig. 2, a film layer 204 is formed on the semiconductor substrate 202, and the film layer 204 will be green-etched in the following steps. An anti-reflection layer 206 is deposited on the film layer 204, and a high-speed spin coating method is used to form a photoresist layer 208 on the anti-reflection layer 206 because the anti-reflection layer 206 is under the photoresist layer 208. 206 serves as a bottom anti-reflection layer of the photoresist layer 208. The lithography process order to form a pattern on the photoresist layer 208, the bottom anti-reflection layer 206 will reduce the reflected light from the film layer 204 and the base # 202, and the lithography process will form a pattern in the photoresist layer 208. The pattern has a collimated shape and can effectively control the absolute size of the pattern on the film layer 204. In a preferred embodiment of the present invention, the reaction gas formulation used includes organic halide gas and argon bromide (HBr). Or organic bromide and carry gas. Taking hydrogen bromide as an example, the flow rate of the argon bromide gas into the reaction chamber is between 1 and 200 seem; and the flow rate of the organic halide as CH2F2 gas into the reaction chamber is between 1 and 200 seem. In another preferred embodiment of the present invention, the formulation shown has any mixed gas including CHF3, CHaF, CMz, CzFe, CzHFs and C, and hydrogen bromide. The flow rate of hydrogen bromide gas into the reaction chamber is between 1 and 200 seem; the flow rate of CHF3 gas into the reaction chamber is between 0 and 200 seem, and the flow rate of CHaF gas into the reaction chamber is between 0 and 200. The flow rate of ChF2 gas into the reaction chamber is between 0 and 200 seem. The flow rate of CaF6 gas into the reaction chamber is between 0 and 200 seem. The flow rate of CzHFs gas into the reaction chamber is between 0 and 200. Between 200 seem, the flow rate of CaFb gas into the reaction chamber is between 0 and 200 seem. Similarly, in this embodiment, the organic bromine compound can also replace the desertified hydrogen. Page 6 This paper size applies to Chinese national standards (CNS> A4 specification (21〇X 297)) (谙 Please read the notes on the back before filling this page) ^ ---- Γ ---- Order --- ------ Line 1 ^ "} · 413857 A7 ____ B7 V. Description of the invention () In addition, in the embodiment of the present invention, the formula of the bottom anti-reflection layer is formed by changing the main hydrogen bromide or The flow rate of the organic bromine compound can obtain bottom anti-reflection layers with different optical properties n, k. The flow rate of hydrogen bromide or organic bromine compound can be changed between 0 and 200 seem to obtain the refractive index n between 1.4 and L 9 And the light-blocking rate k is between 0.04 and 0.5. In this way, by changing the ratio of the injected hydrogen bromide and the organic bromine compound, an adjustable anti-reflection layer η and a bottom anti-reflection layer can be obtained. Adjustable optical properties The anti-reflection layer at the bottom of n and k has good uniformity of deposition similar to that of silicon oxynitride anti-reflection layer. After the pattern is defined, it can be easily removed like an organic anti-reflection layer. Next, the tunable optical properties of the present invention The reflectance n of the layer is between 丨 · 4 and h 9. Under the same conditions, the reflectivity of the polycrystalline stone material is 47%; and its light resistance allows the value to be easily 20.2, _ general light resistance The better range of the ratio is that it must be greater than 0.15 ', so the present invention can meet the requirements compared to general requirements. It is worth noting that the optical properties of the tunable n, k bottom anti-reflection layer material are at 248 nm. Lower, has a lower reflectance, so the tunable optical properties of the n, k bottom anti-reflective layer material of the present invention should also have a lower reflectivity for light with a wavelength of 193mn β. The present invention discloses a method of using electricity The method of slurry enhancement to form an anti-reflection layer with adjustable optical properties at the bottom of n'k, in a chemical vapor deposition reaction chamber, using the deposition formula disclosed in the present invention to form an adjustable optical property on a semiconductor substrate n, k bottom anti-reflection layer. In the present invention, it is possible to use an additional process to perform post-heat treatment on the deposited adjustable optical properties η, k bottom anti-reflection layer, and adjust the heating mode Optical properties The reflective layer pattern is coked to further reduce the optical reflectivity of the anti-reflection layer at the bottom of the adjustable optical properties n and k to enhance the light resistance. Page 7 (clear first. Read the business matters on the back before filling out this page)) --- Γ ----- Order --------- line. 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公 97 VJ X 1ϋ Ζ 4 ί Ν 3 V w I 413857 A7 B7 五^發明說明（ 反射的效果 以上所述僅為本發明之較佳實施例而已，I亦用1限 定本發明之申請專利範圍；凡其它未脫離本發明所揭示之精神下所完成之等效改變或修飾，均應包含在下、+， , ^範圍内。 ’之.申Μ專利 i :{^先閱讀背面之注帝¥項再填寫本頁)97 VJ X 1ϋ Zn 4 Ν 3 V w I 413857 A7 B7 5 ^ Description of the invention (the effect of reflection is only a preferred embodiment of the present invention, I also use 1 to limit the scope of patent application for the present invention; All other equivalent changes or modifications made without departing from the spirit disclosed in the present invention should be included in the following, +,, ^ ranges. '之. 申 Ｍ Patents i: {^ Read the note on the back first. (Fill in this page again)
Jliti — — — — —^1 Ί lt1 I 1 i^· - I I l· I I I I >lll — — — — — . 經濟部智慧財產局員工消費合作社印製 第煩 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Jliti — — — — — ^ 1 Ί lt1 I 1 i ^ ·-II l · IIII > lll — — — — —. Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs This paper standard is applicable to Chinese national standards (CNS ) A4 size (210 X 297 mm)