410422 489ltwf.doc/008 A7 B7 五、發明説明（丨） 本發明是有關於一種半導體積體電路的製造方法，且 特別是有關於一種淺溝渠隔離（shallow trench isolation; STI) 的後退(pull-back)製程。 習知的淺溝渠隔離的製造流程爲在基底上依序形成墊 .氧化層和氮化矽罩幕層。然後進行微影步驟，定義出欲形 成溝渠的區域，再依序以乾蝕刻法來飩刻氮化矽層、墊氧 化層和基底，在基底中形成溝渠。而溝渠所圍繞著的區域 爲主動區，供後續製程在此形成各種主動元件之用。 接著在溝渠的表面以熱氧化法形成襯氧化層，再以化 學氣相沈積法沈積氧化矽於溝渠之中以及氮化矽罩幕層之 上。然後進行化學機械硏磨法，將高於氮化矽罩幕層之氧 化矽層去除掉，以形成溝渠中之淺溝渠隔離。最後再使用 熱磷酸溶液來蝕刻氮化矽罩幕層，以及使用HF溶液來蝕 刻墊氧化層。 但是在半導體深次微米製程中，主動區之間的間隔必 須縮小，因此可供形成淺溝渠隔離的面積也跟著縮小。此 趨勢造成淺溝渠隔離的溝塡(gap filling)效果越來越差’常 會在沈積氧化矽過程中，使溝渠中的氧化矽插塞產生空洞 (void)或裂痕（seam)等結構缺陷。所以發展出後退製程’以 使溝渠的開口加大，以利沈積氧化矽於其中。 第ΙΑ ~ 1B圖爲習知一種淺溝渠隔離之後退製程的流 程剖面圖。在第1A圖中，在基底1〇〇上依序形成墊氧化 層110和氮化矽層120。然後利用微影蝕刻製程’在基底 100中形成溝渠140，其開口寬度爲m。 3 本紙張尺度適.用中國國家標準（CNS ) A4规格（210X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 钎_ 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 410420 4891lwf,〇c/〇OS A7 B7 五、發明説明（v) 在第1B圖中，進行後退步驟，亦即使用熱磷酸，利 用其等向蝕刻步驟，使溝渠140開口處的氮化矽層120往 開口周圍後退η的距離，約爲200埃，使溝渠140的開口 寬度增爲m+2n。 第2A - 2B圖爲習知另一種淺溝渠隔離之後退製程的 流程剖面圖。在第2A圖中，在基底100上依序形成墊氧 化層110、氮化矽層12〇與氧化矽層130。然後利用微影 蝕刻製程，在基底100中形成溝渠140,其開口寬度爲m。 在第2B圖中，進行後退步驟，亦即使用HF之甘油 (glycerol)溶液或次乙基乙二醇（ethylene glycol ; EG)溶液 來一起蝕刻氮化矽層12〇與氧化矽層130,利用其等向蝕 刻步驟’使溝渠140開口處的氮化矽層12〇與氧化矽層13〇 往開口周圍後退η的距離，約爲200埃，使溝渠140的開 口寬度增爲m+2n。 本發明提供另一種淺溝渠隔離後退製程，包括依序形 成墊層與罩幕層於基底上，然後對罩幕層與墊層進行第一 蝕刻步驟’此第一蝕刻步驟對罩幕層之等向蝕刻力大於對 墊層之等向蝕刻力。對暴露出之墊層與基底進行第二触刻 步驟’以形成一溝渠於基底中。接著對罩幕層進行等向性 之第三蝕刻步驟。 上述製程中，墊層可爲氮化矽層，而罩幕層可爲氧化 矽層。如此第一蝕刻步驟可用反應性離子蝕刻法，蝕刻氣 體的成分可使用CF4、CHF3、02與Ar，流量分別約爲30一 50 seem、30 ~ 50 seem、5 _ 10 seem 與 1〇〇 一 150 seem 4 本紙張尺度適用中國國家標準T"CNS) A4規格（210x297公釐） (請先閱讀背面之注意事項再填寫本頁)410422 489ltwf.doc / 008 A7 B7 V. INTRODUCTION TO THE INVENTION (丨) The present invention relates to a method for manufacturing a semiconductor integrated circuit, and in particular, to a shallow trench isolation (STI) pull-back back) process. The conventional manufacturing process of shallow trench isolation is to sequentially form a pad, an oxide layer, and a silicon nitride mask layer on the substrate. Then, a lithography step is performed to define the area where the trench is to be formed, and then the silicon nitride layer, the pad oxide layer, and the substrate are sequentially etched by dry etching to form a trench in the substrate. The area surrounded by the trench is the active area for subsequent processes to form various active components. Then, a liner oxide layer is formed on the surface of the trench by thermal oxidation, and then silicon oxide is deposited in the trench and on the silicon nitride mask layer by chemical vapor deposition. Then a chemical mechanical honing method is performed to remove the silicon oxide layer higher than the silicon nitride mask layer to form a shallow trench isolation in the trench. Finally, a hot phosphoric acid solution is used to etch the silicon nitride mask layer, and an HF solution is used to etch the pad oxide layer. However, in the semiconductor sub-micron process, the interval between active regions must be reduced, so the area available for forming shallow trench isolation is also reduced. This trend has caused the gap filling effect of shallow trench isolation to become worse and worse. Often, during the deposition of silicon oxide, the silicon oxide plugs in the trench produce structural defects such as voids or seams. Therefore, a receding process was developed to increase the opening of the trench to facilitate the deposition of silicon oxide in it. Figures IA ~ 1B are process cross-sectional views of a conventional process for the isolation of shallow trenches. In FIG. 1A, a pad oxide layer 110 and a silicon nitride layer 120 are sequentially formed on a substrate 100. Then, a trench 140 is formed in the substrate 100 by using a photolithography etching process', and the opening width is m. 3 This paper is of suitable size. Use Chinese National Standard (CNS) A4 size (210X 297 mm) (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Bureau 410420 4891lwf, 〇c / 〇OS A7 B7 V. Description of the invention (v) In Figure 1B, the backward step is performed, that is, the use of hot phosphoric acid and the isotropic etching step are used to open the trench 140. The distance η of the silicon nitride layer 120 to the periphery of the opening is about 200 angstroms, so that the opening width of the trench 140 is increased to m + 2n. Figures 2A-2B are cross-sectional views of the process of retreating after the isolation of another shallow trench. In FIG. 2A, a pad oxide layer 110, a silicon nitride layer 120, and a silicon oxide layer 130 are sequentially formed on a substrate 100. Then, a photolithography etching process is used to form a trench 140 in the substrate 100 with an opening width of m. In FIG. 2B, a backward step is performed, that is, using a glycerol solution or an ethylene glycol (EG) solution of HF to etch the silicon nitride layer 12 and the silicon oxide layer 130 together, using In the isotropic etching step, the distance between the silicon nitride layer 120 and the silicon oxide layer 13 at the opening of the trench 140 receded n by about 200 angstroms, which is about 200 Angstroms, so that the opening width of the trench 140 is increased to m + 2n. The invention provides another shallow trench isolation and receding process, which includes sequentially forming a cushion layer and a mask layer on a substrate, and then performing a first etching step on the mask layer and the cushion layer. The etching force is greater than the isotropic etching force on the pad. A second contacting step is performed on the exposed pad layer and the substrate to form a trench in the substrate. Then, a third isotropic etching step is performed on the mask layer. In the above process, the cushion layer may be a silicon nitride layer, and the mask layer may be a silicon oxide layer. In this way, the reactive etching method can be used for the first etching step, and the composition of the etching gas can be CF4, CHF3, 02, and Ar, and the flow rates are about 30 to 50 seem, 30 to 50 seem, 5 _10 seem, and 100 to 150. seem 4 This paper size is applicable to China National Standard T " CNS) A4 size (210x297 mm) (Please read the precautions on the back before filling this page)
410422 Δ 7 4891 t\vf.doc/008 Β7 五、發明説明（〗） (請先閏讀背面之注意事項再填寫本頁) 壓力約爲50 - 100 mtorr，且其RF功率約爲500 - 1000瓦。 而第二蝕刻步驟可使用反應性離子蝕刻法，其蝕刻氣體可 使用Cl2、HBr與He/02，其流量分別約爲20 - 50 seem、 80 - 150 seem 與 20 - 50 semm，壓力約爲 30 - 50 mtorr， 其中He/02之比例約爲7: 3，以及其RF功率約爲3 00 - 600 瓦。第三蝕刻步驟則可使用HF溶液。 依據本發明的方法，其特點爲利用第一蝕刻步驟形成 具有「後退」形狀的罩幕層，再以此爲罩幕，對墊層與基 底進行乾蝕刻，形成具有「後退」形狀的墊層以及基底中 的溝渠。最後再對罩幕層進行第三次蝕刻步驟，形成再一 次「後退」形狀的罩幕層，使溝渠的開口呈階梯狀擴大， _以利後續溝塡步驟的進行。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細 說明如下： 圖式之簡單說明： 第ΙΑ - 1B圖爲習知一種淺溝渠隔離之後退製程的流 程剖面圖； 經濟部智慧財產局員工消費合作社印製 第2A - 2B圖爲習知另一種淺溝渠隔離之後退製程的 流程剖面圖；以及 第3A - 3D圖是依照本發明較佳實施例的一種淺溝渠 隔離之後退製程的流程剖面圖。 圖式之標記說明： 100、300 :基底 5 本紙張尺度適用_^_國國^準（€：?^)六4規格（21{^<297公釐) 410422 4S9 ltwf.doc/008 -- 五、發明説明（k ) 110、310 :墊氧化層 120 :氮化矽層 130 :氧化矽層 140 :溝渠 320 :墊層 330 :罩幕層 340 :抗反射層 350 :光阻層 360 :開口 370 :溝渠 a、b、c、d、e、m、n:寬度 實施例 請參照第3A - 3D圖，其繪示依照本發明較佳實施例 的一種淺溝渠隔離之後退製程的流程剖面圖。 請參照第3A圖，在基底300上依序形成墊氧化層310、 墊層320、罩幕層330與抗反射層340於基底上，然後形 成光阻層於抗反射層340上，經過微影的步驟形成圖案化 的光阻層350。 其中墊層32〇的材質例如可爲氮化矽，其形成方法例 如可爲Si2H2Cl2和NH3爲氣源的低壓化學氣相沈積法(Low Pressure Chemical Vapor Deposition ; LPCVD) ’ 在溫度 700 -800 °C下來沈積之。而罩幕層330的材質例如可爲氧化矽，； 其形成方法可爲以Si(OC2H5)4爲氣源的LPCVD，在溫度 650 - 750 °C下來沈積之。抗反射層340的材質例如可爲 6 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ297公釐） (%先閲讀背面之注意事項再填寫本耳j 經濟部智慧財產局員工消費合作社印製 、-*410422 Δ 7 4891 t \ vf.doc / 008 Β7 V. Description of the invention (〗) (Please read the notes on the back before filling this page) The pressure is about 50-100 mtorr, and its RF power is about 500-1000 watt. The second etching step can use reactive ion etching. The etching gas can be Cl2, HBr, and He / 02. The flow rates are about 20-50 seem, 80-150 seem and 20-50 semm, and the pressure is about 30. -50 mtorr, where the He / 02 ratio is approximately 7: 3, and its RF power is approximately 3 00-600 watts. The third etching step may use an HF solution. The method according to the present invention is characterized in that a mask layer having a "backward" shape is formed by using the first etching step, and the mask layer and the substrate are dry-etched to form a cushion layer having the "backward" shape by using the mask as a mask. And trenches in the base. Finally, a third etching step is performed on the mask layer to form another "backward" shape mask layer, so that the opening of the trench is enlarged in a step shape to facilitate the subsequent trenching step. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the preferred embodiments are described below in detail with the accompanying drawings as follows: Brief description of the drawings: IAA-1B The picture is a cross-sectional view of the process of the withdrawal process after the isolation of a shallow trench; the print of the consumer co-operative society of the Intellectual Property Bureau of the Ministry of Economic Affairs printed 2A-2B is a cross-sectional view of the process of the withdrawal process after the isolation of another shallow trench; -The 3D diagram is a cross-sectional view of a process for retreating a shallow trench after isolation according to a preferred embodiment of the present invention. Explanation of drawing marks: 100, 300: Base 5 This paper size is applicable _ ^ _ Country ^ standard (€:? ^) Six 4 specifications (21 {^ < 297 mm) 410422 4S9 ltwf.doc / 008- -V. Description of the invention (k) 110, 310: pad oxide layer 120: silicon nitride layer 130: silicon oxide layer 140: trench 320: pad layer 330: mask layer 340: anti-reflection layer 350: photoresist layer 360: Opening 370: trenches a, b, c, d, e, m, n: width. For an example, please refer to FIGS. 3A-3D, which shows a cross-section of the process after the shallow trench isolation process according to the preferred embodiment of the present invention Illustration. Referring to FIG. 3A, a pad oxide layer 310, a pad layer 320, a mask layer 330, and an anti-reflection layer 340 are sequentially formed on the substrate 300 on the substrate 300, and then a photoresist layer is formed on the anti-reflection layer 340 and subjected to lithography The step of forming a patterned photoresist layer 350. The material of the cushion layer 32 may be, for example, silicon nitride, and the formation method thereof may be, for example, a Low Pressure Chemical Vapor Deposition (LPCVD) method in which Si2H2Cl2 and NH3 are used as gas sources. At a temperature of 700 -800 ° C Down to deposit it. The material of the cover layer 330 may be, for example, silicon oxide; the formation method thereof may be LPCVD using Si (OC2H5) 4 as a gas source and deposited at a temperature of 650-750 ° C. The material of the anti-reflection layer 340 can be, for example, 6 paper sizes. Applicable to China National Standard (CNS) A4 specifications (210 × 297 mm) (%) Please read the precautions on the back before filling in this document. ,-*
410422 489lt\vf.doc/008 A7 B7 五、發明説明（ir) 有機材料。 請參照第3B圖’以光阻層350爲罩幕，對抗反射層 340、罩幕層330、墊層320與墊氧化層310進行蝕刻，形 成開口 360。此蝕刻步驟所用的蝕刻法較佳爲對抗反射層 340與罩幕層330之側向蝕刻力（lateral etch)大於對墊層 320之側向蝕刻力。若使用反應性離子蝕刻法(reactive i〇n etch ; RIE) ’其所使用的蝕刻氣體和抗反射層34〇與罩幕 層330的反應性要大於和墊層320的反應^生。 以抗反射層340的材質爲有機材料，罩幕層330的材 質爲氧化矽以及墊層32〇的材質爲氮化矽來說，RIE的飽 刻氣體例如可爲CF4、CHF3、02與Ar，其流量分別約爲3〇__ 50 seem、30 - 50 seem、5 - 10 seem 與 100 - 150 seem , 壓力約爲50 - 100 mtorr’而其RF功率約爲500 - 1000瓦。 因爲此蝕刻氣體的配方使氧化矽的罩幕層330容易被 而形成揮發性的氣體，而其中的氧氣又會氧化有機材料的 抗反射層340，所以此蝕刻氣體對於氧化矽罩幕層33()和 有機材料的抗反射層340之間的反應性較大，會有側向貪虫 刻發生。對於氮化矽的墊層32〇 ’-則~主-要是以非等向性的 垂直蝕刻爲主。所以開口 360在塾層.32_0處的開口寬度a 小於在罩幕層330的的開口寬度b。 請參照第3C圖，對暴露出之墊層320與基底3〇〇進 行鈾刻，以形成溝渠37〇於基底300中，其寬度爲〇，而 其上方開口 36〇之寬度爲d。此蝕刻步驟例如可用反應个生 離子蝕刻法，以非等向性之垂直蝕刻爲主。 7 本紙張尺度適ϋ國國家榡準（CNS ) A4規格（2丨0X297^^1 --- ----.-IL---@裝 I- (請先閲讀背面之注意事頃再填寫本頁)410422 489lt \ vf.doc / 008 A7 B7 V. Description of the Invention (ir) Organic materials. Referring to FIG. 3B ', the photoresist layer 350 is used as a mask, and the anti-reflection layer 340, the mask layer 330, the cushion layer 320, and the pad oxide layer 310 are etched to form an opening 360. The etching method used in this etching step is preferably that the lateral etch force of the anti-reflection layer 340 and the mask layer 330 is greater than the lateral etch force of the pad layer 320. If a reactive ion etching method (reactive ion etch; RIE) is used, the etching gas and the anti-reflection layer 34 used therein are more reactive with the mask layer 330 than with the cushion layer 320. Taking the material of the anti-reflection layer 340 as an organic material, the material of the cover layer 330 as silicon oxide, and the material of the cushion layer 32 as silicon nitride, the saturated gas of RIE can be, for example, CF4, CHF3, 02, and Ar. Its flow is about 3〇__50 seem, 30-50 seem, 5-10 seem and 100-150 seem, the pressure is about 50-100 mtorr 'and its RF power is about 500-1000 watts. Because the formula of the etching gas makes the silicon oxide mask layer 330 easy to be formed into a volatile gas, and the oxygen in it will oxidize the anti-reflective layer 340 of the organic material, the silicon oxide mask layer 33 ( ) And the anti-reflection layer 340 of the organic material have a large reactivity, and a lateral greedy engraving may occur. For the silicon nitride pad layer 32′-then ~ mainly, it is mainly anisotropic vertical etching. Therefore, the opening width a of the opening 360 at the pier layer .32_0 is smaller than the opening width b of the cover layer 330. Referring to FIG. 3C, the exposed pad layer 320 and the substrate 300 are etched with uranium to form a trench 37 in the substrate 300, the width of which is 0, and the width of the opening 36o above it is d. In this etching step, for example, a reactive ion etching method can be used, and anisotropic vertical etching is mainly used. 7 This paper is compliant with the national standard (CNS) A4 specification (2 丨 0X297 ^^ 1 --- ----.- IL --- @ 装 I- (Please read the notes on the back before filling (This page)
1T 經濟部智慧財產局員工消費合作社印製 410422 五、發明説明（£ ) 若墊層320的材質爲氮化矽，基底300的材質爲矽， 則所用之反應性離子蝕刻法的蝕刻氣體可用Cl2、HBr與 (請先閲讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs of the Ministry of Economic Affairs of the People's Republic of China 410422 V. Description of the invention (£) If the material of the cushion layer 320 is silicon nitride and the material of the substrate 300 is silicon, the etching gas used for reactive ion etching can be Cl2. , HBr and (Please read the precautions on the back before filling this page)
He/〇2 ’ 流量分別約爲 20 - 50 seem、80 - 150 seem 與 20 - 50 semm，壓力約爲30 - 50 mtorr。其中He/02之比例約 爲7 : 3，而RF功率約爲300 _ 600瓦。在此蝕刻氣體的 配方中，沒有含氟氣體，所以墊氧化層310在此蝕刻過程 丨“ 中幾乎沒有損傷。 請參照第3D圖，去除光阻層350與抗反射層340， 因爲二者皆爲有機材料，去除的方法例如可先用氧電漿將 其一起灰化（ash)，再用濕式淸潔法將灰化後的殘餘物淸 除。 經濟部智慧財產局員工消費合作社印製 接著對罩幕層33〇以及墊氧化層310進行等向性之蝕 刻步驟’使罩幕層330再更進一步「後退」，而暴露出之 墊氧化層310也被去除之。若罩幕層330的材質爲氧化矽， 墊氧化層310的材質亦爲氧化砍，則此蝕刻可使用HF溶 液之濕式蝕刻法來進行之。如此所形成的開口 360，其寬 度在墊層32〇處仍爲d ’在罩幕層33〇處之寬度爲e，而 溝渠37〇的寬度爲c。如此一來形成之溝渠37〇(開口 36〇) 寬度爲由下往上遞增之階梯形狀(c<(i<e)，以利後續要在溝 渠370中塡入絕緣材料，例如氧化矽，來形成淺溝渠隔離。 其中d和c的差異可做到約500埃左右。 在上述之實施例中’因爲考慮盡量不要換機台之故， 所以光阻層350和抗反射層34〇 —直留到蝕刻出溝渠370 之後才去除。光阻層350和抗反射層340若在蝕刻出開口 8 本紙張尺度適用巾關家辟（CNS ) A峨格（210X297公釐)~' 410422 A7 4S91twf'd〇C/〇〇S__B7__ 五、發明説明（〇 ) 360之後，將其立即去除亦可，對製程結果並無影響，只 是增加換機台的次數而已。 由上述本發明較佳實施例可知，本發明的特點爲利用 第一蝕刻步驟形成具有「後退」形狀的罩幕層，再以此爲 .罩幕，對墊層與基底進行乾蝕刻，形成具賓「後退」形狀 昀笔層以及基底中的溝渠。最後再里罩蟇層進行第三次鈾 刻步驟，形成再一次「後退」形狀的罩幕層，使溝渠的開 口呈階梯狀擴大，以利後續溝塡步驟的進行。因此應用本 發明可在蝕刻出溝渠時’不需要再以酸蝕刻方式，即可同 時造成氮化矽後退之效應。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍內，當可作各種之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者爲準。 (請先閲讀背面之注意事項再填寫本頁) 丨α裝. 訂 經濟部智慧財產局員工消費合作社印製 9 本紙張尺度逋用中國國家標準（CNS ) Α4規格（21 ΟΧ29?公釐）He / 〇2 ′ flow is about 20-50 seem, 80-150 seem and 20-50 semm, respectively, and the pressure is about 30-50 mtorr. The He / 02 ratio is about 7: 3, and the RF power is about 300_600 watts. In the formula of this etching gas, there is no fluorine-containing gas, so the pad oxide layer 310 has almost no damage during the etching process. Please refer to FIG. 3D, and remove the photoresist layer 350 and the anti-reflection layer 340, because both are For organic materials, the removal method can be, for example, ashing with an oxygen plasma first, and then removing the ashing residue with a wet cleaning method. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Then, an isotropic etching step is performed on the mask layer 33 and the pad oxide layer 310, so that the mask layer 330 is further "retreated", and the exposed pad oxide layer 310 is also removed. If the material of the cover layer 330 is silicon oxide, and the material of the pad oxide layer 310 is also oxidized, this etching can be performed by a wet etching method using an HF solution. The width of the opening 360 thus formed is still d 'at the cushion layer 32o, and the width of the trench 33o is c, while the width of the trench 37o is c. The trench 37 (opening 36) formed in this way has a stepped shape (c < (i < e)) increasing in width from bottom to top, in order to inject an insulating material, such as silicon oxide, into the trench 370 in the future. A shallow trench isolation is formed. The difference between d and c can be about 500 angstroms. In the above embodiment, 'because it is considered not to change the machine as much as possible, the photoresist layer 350 and the anti-reflection layer 34 are left directly. It is not removed until the trench 370 is etched. If the photoresist layer 350 and the anti-reflection layer 340 are etched, the paper size is suitable for paper towels (CNS) A Ege (210X297 mm) ~ '410422 A7 4S91twf'd 〇C / 〇〇S__B7__ 5. Description of the invention (〇) After 360, it can be removed immediately, it has no effect on the process results, but only increases the number of machine changes. According to the foregoing preferred embodiment of the present invention, it can be seen that The invention is characterized in that a mask layer having a "backward" shape is formed by using the first etching step, and the mask layer is used to dry-etch the cushion layer and the substrate to form a "backward" shape pen layer and the substrate. Ditch. Finally, the lining layer is covered for the third The second uranium engraving step forms a mask layer in the shape of "backward" once again, so that the opening of the trench is enlarged stepwise to facilitate the subsequent trenching step. Therefore, when the trench is etched by using the present invention, it is not necessary to The acid etching method can simultaneously cause the effect of silicon nitride receding. Although the present invention has been disclosed as above with the preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art will not depart from the spirit and scope of the present invention. Within the scope, various modifications and retouching can be made, so the protection scope of the present invention shall be determined by the scope of the attached patent application. (Please read the precautions on the back before filling this page) 丨 α binding. Order Printed by the Intellectual Property Bureau's Consumer Cooperatives of the Ministry of Economic Affairs 9 This paper uses Chinese National Standard (CNS) Α4 size (21 〇 × 29? Mm)