TW407291B - The simulation of the post-exposure bake process of the chemically amplified resist - Google Patents

Abstract

A method of the simulated post-exposure bake process of the chemically amplified resists, wherein said chemically amplified resist has the photoacids and the protected unit cell, and said method at least comprises the following steps: firstly, input the initial parameter of the bake process after the exposure, to display the temperature-time process of the bake process after said exposure. Next, input reaction constant and diffusion coefficient to display said chemically amplified resists, wherein said reaction constant is a function of temperature, and said diffusion coefficient is the function of the protected unit cell concentration. Then, calculate the protected unit cell concentration of said chemically amplified resists, wherein said calculation procedure uses an implicit scheme; and, calculate the photoacids material concentration of said chemically amplified resists, wherein said calculation procedure uses the above-mentioned implicit scheme and said diffusion coefficient.

Description

407291 a7 ΙΓ 5. Description of the invention Field of the invention: The present invention relates to a photoresist baking process for a semiconductor process, especially in the lithography process of deep sub-micron devices. Chemically amplified resists Simulation of Post-Exposure Bake Process. Background of the Invention: With the development of semiconductor processes to very large scale integrated circuits (VLSI), in order to meet the requirements of high integration of integrated circuits, the size of the formed components has been reduced to deep sub-micron components. Therefore, the photoresist material used in the lithography process for manufacturing extremely fine patterns has a different operating principle than the traditional technology. In general, in order to reduce the power of light sources with deep ultra-violet (DUV) wavelengths, the industry has developed photoresist materials that use the principle of chemical amplification effects, so-called chemically amplified resists (Chemically amplified resists, CAR). 4 Printed by a staff member of the Central Bureau of Standards, Ministry of Economic Affairs. When the above chemically multiplied photoresist film is exposed to deep ultraviolet light, the pattern on the photomask will be transferred to the photoresist material and form a latent image. After the exposure process is performed, the photoresist film can be subjected to a baking process under a high temperature environment to drive the protective polymers (Protection Polymers) in the photoresist material to react with the photoacids (ph0acids). This process is generally called the post-exposure baking process (P〇st_ 2 This paper size applies to the Chinese national standard (['~,) 6 4 specifications (21〇 / 29 "? 公 牦)) Bureau Consumer Consumption Cooperative Innu Λ 7 ---- ζ ---- 5. Description of Invention ()

Exposure Bake,? EB). Generally speaking, during the post-exposure baking process (PEB) for positive chemically amplified resists, the protective polymer located in the photoresist material will have a catalytic reaction with the photoacid substance. ) While decreasing. Therefore, after the post-exposure baking process is completed, the photoresist material located in the exposed area will lose the protective effect of the polymer and will have a larger etch rate compared to other unexposed areas. That is, after the post-exposure baking process is completed, the exposed portion of the photoresist film will be soluble and can be easily removed by the developing solution. A baking process performed in a high-temperature environment often has two different mechanisms. One is to protect the reaction between the polymer and the photoacid material; the other is the diffusion effect of the photoacid material. Please refer to U.S. Patent 5J17,612, or see L. Capodieci, A. Krasnoperova, F. Cerrina, C. Lyons, C. Spence, and K. Early,

Novel post-exposure bake simulator: first results, " J. Vac. Sci. Technol., Vol. B13, no. 6, pp. 2963-2967, 1995. Among them, the post-exposure baking model (PEB model) proposed in this document includes the above two mechanisms. However, in this document, the above-mentioned reaction mechanism and diffusion mechanism both use fixed reaction constants and diffusion coefficients to establish their post-exposure baking models. However, since the reaction constants can meet 3 paper scales, the Chinese National Standard (CNS) A4 specification (210X297) is available (reading and reading back, 6 of 1; 5 items are filled in this buttercup) ir 涑 economy The Ministry of Standards and Technology Bureau of the People's Republic of China only prints consumer cooperatives. ４０ 柳 1 a 1Γ 5. Description of the invention () Arrhenius relations (Arrhenius relations), the rate of this reaction will have a great correlation with the temperature in the process. And for the post-exposure baking process, its temperature-time history will often produce different results with the configuration of the bake apparatus. Therefore, the above-mentioned reaction constant can be regarded as a variable that takes time as a lame. Furthermore, the diffusion coefficient of the photoacid material has a great correlation with the temperature and the protection-site concentration. Therefore, when building a model of the main post-exposure baking process, the temperature factor and the protection unit cell concentration factor should be added to the reaction constant and diffusion coefficient, and the temperature-time history of the baking machine should be considered. OBJECTS AND SUMMARY OF THE INVENTION The object of the present invention is to provide a method for simulating a chemical multiplication type photoresistor and its post-exposure baking process (PEB). Another object of the present invention is to provide a model that simulates a chemical multiplication type photoresist and its post-exposure baking process (PEB). The model provided by the present invention to simulate the chemical multiplication type photoresistor and its post-exposure baking process can be established using the following steps: (a) the reaction mechanism of the protective polymer and the photoacid material, and the photo paper size Applicable to China National Standard (CNS) Λ4 specification (2 丨 0X297) 筇 --------- install -------- order j ------- line (; ι. · 'Ίι 先I read it; the other way around; '1 read? The item is filled in too much 1).. Λ: W: Printed by the Central Standards and Wheat Bureau of the Ministry of Economic Affairs and printed by the Consumers Cooperative 407291 5. Description of the invention () The nature of the diffusion mechanism Post-exposure baking process > 1+ jsign <, in its model, is displayed with a set of differential equations including reaction and diffusion, and (Reaction-diffusior equation) forces; (b) Protecting polymers and light Spot after acid substance + cylinder * < Reaction constant is shown by Arrhenius expression. (C) Use the reaction constant shown by Arnis equation to establish the photoacid substance loss mechanism; (d) Display the diffusion coefficient It is the product of the temperature factor part and the cell concentration part of the protection unit. The temperature factor part can also be The Ernes equation is expressed; the cell concentration factor part of the protection unit can be expressed by an exponential function; (e) The exponential function is used to represent the temperature-time history of the process, and the heating and cooling states of the baking machine are displayed in a solid display. f) The reaction constant and diffusion coefficient of the above post-exposure baking process model also include a time factor. As for the numerical method provided by the present invention to simulate the chemical multiplication type photoresistor and its post-exposure baking process, the following steps are shown: (g) Dividing the area where the photoresistive material is simulated into a plurality of grids with the same size (H) Distinguish the process time into multiple equal time periods, where the size of each time period can be determined by the accuracy required for the simulation; (i) Calculate the cell concentration of the protection unit for the next period, where the calculation procedure is Use the cell concentration of the protection unit and the concentration of the photoacid substance in the current period and the next period to perform calculations. The paper scale is applicable to the Chinese National Standard (CNS) Λ4 Regulations (2 丨 0X297). f)

V. Description of the invention 407391 ⑴ Calculate the concentration of photoacid material along the-direction and the intermediary segment, where the intermediary period is located between the current period and the next period. Calculate the photoacid material tear along the second direction, of which the second The direction is perpendicular to the first direction; ⑴Repeat steps ⑴ to (k) 'until the obtained photoacid material concentration meets the conditions of the description; (m) progress to the next period and repeat steps ⑻ to ⑴ until the baking By the end of the manufacturing process, the drawings are simply explained: The above-mentioned content and the many advantages of this invention will be explained by the following detailed description combined with the attached drawings. Among them, the first picture is the temperature and time history of the baking machine. To show the post-exposure baking process of the present invention; the first figure is a flow chart of a calculation method, which shows a flowchart of a calculation method for establishing a post-exposure baking process model according to the present invention; and the third picture is a cross-sectional view of a photoresist material Shows that the area where the simulation is performed on the photoresist section is divided into a plurality of mesh grids according to the present invention. Detailed description of the invention: (-first read the results and then the '-H matters and then fill in ^ reverse

, 1T Quanquan Ministry of Economic Affairs, Central Bureau of Standards, Employees' Consumer Cooperatives, Printing Concentration Generally speaking, chemically amplified photoresist (chemical amplified resists) has four main components, which are Photo-Acid generators, pag}, protective polymer (pr〇tecti〇n This paper size applies to the Chinese National Standard (CNS) A4i ^ i ~ (17〇x 297.i > ^) 5. Description of the invention () polymers), resin (resins), And solvent (solvei ^ -S). From the viewpoint of process simulation, the manufacture of photoacids (PAG) and protective polymers play a major role in the model of the post-exposure baking process (PEB). Under irradiation, the above-mentioned photoacid substance (PAG) will be decomposed into photoacids and by-products. The photoacid substance will then react with the reaction site that protects the polymer , And produce other acidic materials in high temperature environment. For positive photoresist, the reaction that occurs will reduce the protective polymer, so the resin in the photoresist material will no longer be protected by the protective polymer. Therefore The reaction can also be called a deprotection reaction, and the protective polymer can also be regarded as an inhibitor, and the reaction unit of the inhibitor is also called a protection-site. ). Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs' As the author's temperature rises, the diffusion effect of the photoacid material will become more significant. Therefore, the diffusion effect of the photoacid material should also be included in the baking process after exposure ( PEB) model. Among the photoresist materials, the photoacid material must diffuse to an appropriate position in order to interact with the protective polymer and its reaction unit spores. During the diffusion process, the photoacid material can be regarded as a sink. (Trapped) in the protective polymer, and from the viewpoint of the process model, the loss of the photoacid material is visible. Therefore, for a model of the post-exposure baking process, the deprotection reaction, photoacid Matter diffusion effect, 7 CNS) Λ4 ^ (210X29 ^ 7 407291 A < B7 V. Description of the invention (and the mechanism of loss of photoacid substance * k Du Shi丄 $ should be included. From this, the following reaction-diffusion equations can be obtained. The mechanism of reaction and diffusion in the process is described as follows: ΘΜ ~ di 5H ~ dt '

-k〇MH: V (DHVH) + La (1) (2), and the photoacid member can be expressed by the following formula

La = —kaH2 (3) where M and 代表 respectively represent the cell concentration of the protection unit and the photoacid concentration, and both can be expressed as a function of time ⑴ and space (χ) as shown in Equation (1). The deprotection reaction can be described using the first-order reaction of the roll of the protection unit and the concentration of the photoacid material (first_〇rder reacti0). As for the equation (2), the concentration of the photoacid material includes a diffusion coefficient DH and A function of the photoacid material loss mechanism. The photoacid material loss mechanism can be described using a second-order reaction of the photoacid material concentration, as shown in equation (3). | Install ------ Order ------: Fruits (please read '" Matter's Note " Matters before filling this page),. In the preferred embodiment of the present invention, the effects of the heating process and the cooling process of the baking machine can be incorporated into the post-exposure baking process model. By using the temperature-time history of the baking machine , Can obtain deprotection reaction constant (kD), photoacid substance loss constant (ka) And diffusion coefficient (dh), of which the above three can be expressed as a function of time. From this, it can be realized that the paper size is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0X 297 cm) 40 ^ 291 5. Description of the invention The best embodiment provided by Benjiming. It should be noted that the above-mentioned constants, coefficients, and temperature variables can be described by Arrhenius expressions. In equations (1) and (3 The reaction constant in) can be shown as: kD = kD (T) = Ad exp (-ED / kT) (4) and ka = ka (T) = Aa exp (-Ea / kT) (5) where AD and Aa Divided into representative exponential constants, and the ED and 3 are activation energies, as k is Boltzmann constant »and T represents the process temperature. As for equation (2) The diffusion coefficient in can be expressed as a function of temperature and cell concentration of the protection unit:

Dh = Dh (M, Mo, T) = Doexp ⑹ (please read the note first " matter 洱 fill in the wooden page. Packing-order printed by the employee consumer cooperative of the Central Bureau of Standards, Didi Bureau

Where x = 1-M / MC (7) and this paper size applies the Chinese National Standard (CNS) Λ4 specification (210X297) 筇 5. Description of the invention 407291 Λ 7 Β7 D〇 ~ D〇 (T) = A〇exp ( -E〇 / kT) (8) wherein the diffusion coefficient DH includes a temperature factor portion and a concentration factor portion. The temperature factor part is the D shown in equation (6). And the concentration factor part is the exponential part in equation (6). As for M. Represents the initial concentration of the protection unit cell, and A. With E. They respectively represent the diffusion coefficient DHt, the pre-exponential constant of the temperature factor part, and the activation energy of the photoacid material. α and β represent model parameters of the diffusion coefficient θ {1 and its concentration factor. Please refer to the first figure, which shows the process temperature range of the baking machine. The process temperature distribution is approximately an exponential function of time. The temperature-time history of the process includes a heating state from the start of baking to the baking time tb, and a cooling state from the baking time tb to the end time tf. The choice of the termination time% is to confirm that the temperature T (tf) of the process is close to room temperature. Therefore, the temperature model can be expressed by the following equation: T = T (t) | AT (l-e't / Th) + To △ re + H) ~ + T〇if 0 < t < tb if tk < t (9 ) --------- Λ ------ Order -----.--- 涑 (Visit and read the back of the book:; 5- " Matters and then fill out this page).》 经 " Central Standard " -Printed by the Bureau ’s Consumer Cooperatives ^ where AT = Tf-T〇 and ΔΤ '= Τί'-Το 10 This paper size applies to the Chinese National Standard (CNS) Λ4 specification (210 × 297 meters) (10) (11) 407291 Λ — __________ ΙΓ _ 5. Description of the invention () where 'and Tf respectively represent room temperature and baking temperature, and' and \ represent the time constants of the heating and cooling states, respectively, and the baking time is expressed by ". To confirm The temperature at time tb is a continuous temperature, and T / can be expressed by the following formula: T'f = AT (le-, k / ^) + T0 (12) Based on the above-mentioned process model formed according to the present invention, it will protect Adding the diffusion coefficient of the unit cell concentration factor (as shown in equation (6)) can make the simulation of the baking process after exposure to the chemical multiplication type photoresist more realistic. Then please refer to the second figure, which is shown as using The flow chart of the simulation calculation of the above post-exposure baking process model. As for the third figure, the photoresistive cross-section is shown as the area simulated on the photoresistive cross-section according to the present invention. The light is shown in the third figure. The resistor is located in the area formed by the solid line segments 200, 210, 22Q, and 230. The solid line segments 200 and "ο represent the upper surface of the photoresist in contact with air, and the phase between the photoresist and the substrate, respectively. Touch the surface below. Therefore, the χ-axis 24o extends horizontally along the surface of the substrate; and the Υ-axis 2 50 extends upwardly along the thickness of the photoresist film. As for the entire simulation area 20 shown in the figure, it is divided into a plurality of smoke-like lattices of two W 相 dimensions.垌 Among them, the boundary condition of the simulation area 20 can be obtained by using a central difference method to obtain the righteousness. ★ Dan Ying like solution. For example, the concentration of the photoacid substance at the boundary 230 is the first-order micro-eight-blade J, which is not 11 This paper size is applicable to the Chinese national standard (CNS) Λ4 is present (210X 297 public power) • t 先 读 # Note on the back Matter #fill in this buttercup. Ordered by the Central Standards Bureau of the Ministry of Economic Affairs and Industry, printed by the Cooperative Consumer Cooperative 407291. Printed by the Consumer Standards of the Central Bureau of Standards, Employees of the Ministry of Economic Affairs ^ AT B7 V. Description of the invention () The following formula dx (0 7) 2Δχ (13) where j = 0 to N ′ and 厶 is the size of the grid in the x-axis direction. Therefore, in order to obtain the boundary condition of the simulation area 20, the mesh grid located in the simulation area 20 must extend to the square area surrounded by the dotted lines 260, 270, 280, and 290, as shown in the third figure. For the reaction equations and diffusion equations in equations (1) to (3), the iterative alternating direction implicit method (IADI) can be used for calculation. The calculation flow chart is shown in Figure 2. The detailed description of the calculation process is as follows. First proceed to step 100, input parameters to simulate the temperature-time history of the baking machine. The parameters entered include room temperature D0 and baking temperature Tf, baking time tb, and time constants, and, as shown in equations (9) ~ (12). The process then proceeds to step 110, where the physical parameters of the chemically multiplied photoresist are entered. The physical parameters include pre-exponential constants, A and A 'activation energies E0, 0 and Ea, and parameters such as the equation (4 D (8 D_ a and β-parameters). Home materials-_ (Please read first. Note on the back and then fill in the water page) (Packing — J ---- Media 407291 V. Description of the invention Perform step 1 2 0 to divide the process time and get multiple time periods "Each of these periods At Ξ tn + i-, its size, can be controlled by (read first read the back and note the f item 穹 fill in the text) to make each grid in the second graph & (n〇 dai p〇ints) to determine the relative error average 値. Go to step 130 'use the above-mentioned inclusive scheme) to calculate the protection cell concentration of the next period n + l (that is, time t + At). In terms of i, j), the protection cell concentration of n + 1 in the next period can be calculated by using the protection cell concentration in the current period n at the square (i, j) and the protection cell n + 1 in the next period. It is therefore necessary to use the iteration method in order to infer the concentration in the next period. Make ",, after" to proceed to step 140, the concentration of the photoacid substance located in the X-axis direction and the time interval is an intermediate time period n + l / 2 (that is, time t + At / 2). An implicit method can be used. scheme) to calculate it. The tenth is to calculate the photoacid substance concentration Η at the square (1, j) 'and the time period is n + 1/2. The following two items of data (a), ( b). The data (a) is the photoacid substance concentration in the three adjacent squares (i, j-1), (i, j) and (i, j + q), and the time is the current time period; as for Data (b) are the diffusion coefficients DH of the current period and ten periods respectively. Because for the next period, the cell concentration M (n + 1) of the protection unit has been calculated in step 130, so the time is the intermediate period. The diffusion coefficient DH (n + l / 2) can be calculated by using the protection unit cell roll M (n + l / 2), where the protection unit cell excitability M (n + l / 2) is the current The average concentration of the concentration M (n) during the period and the concentration M (n + 1) of the next period. 13 This paper size is applicable to the Chinese National Cotton Standard (CNS) Λ4 specification (210X 29? Male) Α7 Β7 V. Description of the invention ( ) (please First read the reverse: "i" and fill in the items again, and then go to step 150, use an implicit method (Implicit scheme) to calculate along the γ-axis direction, and the time is the next period n + i (ie t + At) concentration of photoacid substance. For the concentration of photoacid substance in the square (i, j) and the time is n + 1 in the next period, it can be added by the following resources: (d) Calculation. The data (c) is the concentration of the photoacid substance in the three adjacent squares (i_i, "), (U) and (i + i,"), and the time is the intermediate period n + i / 2; and the data is The diffusion coefficient DH (η + 1/2) where time is the ten-second period, and the diffusion coefficient DH (n + 1) where time is the next period. The diffusion coefficient in which the time is an intermediate period can be calculated by using the above-mentioned average unit cell protection (M + n). As shown by the dashed box 160 in the second figure, by combining steps 140 and 150, the concentration of the photoacid substance in the next period n + 1 can be calculated, that is, + (η + 1). -Printed by the Central Ministry of Economic Affairs of the Ministry of Economic Affairs, Shellfish Consumer Cooperative. For the next period, steps 130 to 150 constitute a central difference method. Step 170 is then performed to check whether the above results meet the convergence condition. If the calculated results do not satisfy the convergence conditions, the calculated difference between the cell concentration of the protection unit and the concentration of the photoacid substance is used to perform the central difference method until the obtained answer satisfies the convergence conditions. The calculation sequence then advances from the current period to the next period and continues. When the calculated result for the next period meets the convergence conditions, 14 paper sizes are applied to the Chinese National Standard (CNS) Λ4 specification (21〇ί ^ 97_ 公 ^) 5. Description of the invention () Step 1 80, check the Calculate whether the program satisfies the conclusion of the baking process. If the calculation program has reached the end condition of the baking process, then = simulation of the baking process after the exposure. Otherwise, proceed to Lulu 丨 〇 Continue to perform calculation procedures for a period of time, that is, control the calculation process to return to 2 times 120 to calculate the next new period. 'The simulation method provided by the present invention (such as the calculation flowchart shown in the second figure) has many advantages: @ (1) In the entire post-exposure baking process simulation, for each individual time period and intermediary time period, In other words, all the reaction constants (] ^ and let ”and the photoacid material diffusion coefficient (DH) can be obtained by calculation. Therefore, a post-exposure baking (p EB) simulation including temperature-time history will be obtained. · 5 (2) In the simulation of the entire post-exposure baking process, for each square, the diffusion coefficient (Dh) of the photoacid material can be obtained through a calculation program. This makes the post-exposure baking process The simulation has a photoacid material diffusion coefficient (Dj.) Based on the protection unit cell concentration as a factor. (3) According to the calculation process provided by the present invention, the protection unit cell concentration in the next period will be calculated before the photoacid concentration. Therefore, The obtained concentration of the protection unit cell can be used in the subsequent calculation of the concentration of the photoacid material. The diffusion coefficient is the coefficient of the diffusion equation of the photoacid material. The above method can be used to accelerate the The calculation procedure has reached a convergence condition. Although printed by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs, the present invention is illustrated above with a better example, but it is not intended to limit the spirit and the inventive entity of the present invention, only to this embodiment. Those skilled in the art should make modifications within the scope and spirit of the present invention that are to be included in the following patent application parks. 15 This paper size is applicable to China Cathay Standard (CNS> Λ4 specification (2.0 × 2W) species of bamboo>

Claims (1)

A8 B8 C8 D8 Patent Application Scope 1 · A method for post-exposure baking process (p EB) of a Moven chemical multiplier photoresist, wherein the chemical multiplier photoresist has a photoacid substance and a protective unit cell, and the method is at least It includes the following steps: Enter the initial parameters of the post-exposure baking process to display the temperature-time history of the post-exposure baking process; enter the reaction constant and diffusion coefficient to display the chemical multiplicative photoresist, where the reaction constant is Function of temperature, and the diffusion coefficient is a function of temperature and cell concentration of the protection unit; calculating the cell concentration of the protection unit of the chemical multiplication type photoresist, wherein the calculation program uses an Implicit scheme; and calculating the chemical multiplication The photoacid substance concentration of the photoresist, wherein the calculation program uses the above-mentioned inclusion method and the diffusion coefficient. 2. The method according to item 1 of the patent application range, wherein the above-mentioned post-exposure baking process includes a heating state and a cooling state, and the heating state and the cooling state can be expressed by an exponential function. --------- Install ------ Order (please read the notes on the back before filling this page) Li Zhuanqing • -'kou Shenru 3 The number of passes refers to the baking and baking: within. The number of rooms includes the regular and private items in the private room. After baking, the baking time is medium and medium. The baking is done in the middle time. The baked items are printed by the central government's #Associate Bureau employee consumer cooperative. For the demonstration, please use the “Shenshulili” system to expand the scale: The same as the number of steps, the following steps should be repeated as shown in the following example: 6 Anti-inclusion, inclusive, and more to explain the obstacles in the previous step, the optical paper size applies Chinese national standards ( CNS) A4 specification (210X297 mm) 401391 Shao C8 _ D8 6. The scope of the patent application shows that the temperature constant of the reaction constant and diffusion coefficient is Arrhenius expressions; and that the expansion coefficient shows its protection Part of the unit cell concentration factor is exponential expressions ° 5. The method according to item 4 of the patent application range, wherein the above-mentioned reaction constants include pre-exponential constants and activation energy; and the diffusion coefficient Contains model parameters of the cell concentration factor portion of its protection unit. 6. The method according to item 1 of the patent application range, wherein the above-mentioned post-exposure baking process can be divided into a plurality of periods, wherein the intervals of each period are equal ', and the step of calculating the cell concentration of the protection unit and calculating the concentration of the photoacid substance can In each period. 7 · The method according to item 6 of the scope of patent application, wherein the step of calculating the cell concentration of the protection unit further includes the following steps: (a) Calculate the interval of each of the above periods, where the interval of each period is based on the set error. Decision; printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions for the poor side and fill out this page) (b) calculate the cell concentration of the protection unit for the next period, where the calculation program uses the trapezoidal method ). 8_ If the method of the scope of patent application No.7, the above steps of calculating the concentration of photoacid substances further include the following steps: 17 This paper size is applicable to China National Standard (CNS) A4 spot (2H) >: 297 mm ) Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 407 29 j- a8 B8 C8 D8 VI. Patent application scope (c) Calculate the concentration of the photoacid substance along the first direction and the time is the intermediary period, where The intermediary period is located between the current period and the next period; (d) Calculate the concentration of the photoacid substance along the second direction and the time is the above-mentioned next period, wherein the second direction is perpendicular to the first direction; ( e) Repeat the steps (b and (d) until the concentration of the photoacid substance in the next period satisfies the convergence conditions. 9) If the method of item 8 of the scope of patent application, further includes the step of adding a period and repeat Cover the above steps (a) ~ (e) until the post-exposure baking process ends. 1 0. The method of item 7 in the scope of patent application, wherein in the above step (b), the protection in the next period Unit cell concentration The mass concentration and the cell concentration of the protection unit in the current period and the next period are expressed as follows: 1 1. The method according to item 9 of the scope of patent application, wherein the photoacid substance concentration in steps (C) and (d) It can be obtained by calculation using the diffusion coefficient, and the diffusion coefficient is a function of the cell concentration of the protection unit; and the cell concentration of the protection unit calculated in the above step (b) can be used for the above-mentioned intermediate period and the next period In the calculation program: 1 2 · —A device to simulate the chemical multiplication type photoresistor's post-exposure baking process (PEB), the device contains at least: In ml n ^ i II In -1---I 1 i ·士--I-HI I \ Jm 1-1-1 ^ in, va · ν (Please read the precautions on the back before filling this page). 18 This paper's dimensions apply to Chinese National Standard (CNS) A4 specifications (210X297 (Mm) 407291 ab, cd Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 6. The first device in the scope of patent application, used to select the initial parameters of the post-exposure baking process to display the post-exposure baking process Temperature-time history; second device, back In the first device, it is used to determine the reaction constant and the diffusion coefficient to display the chemical multiplicative photoresist, wherein the above-mentioned determination procedure is performed by using the temperature-time history, and the reaction constant is a function of temperature, and The diffusion coefficient is a function of the temperature and the concentration of the protection unit cell; a third device, in response to the second device, is used to calculate the protection unit cell concentration of the chemically multiplied photoresist, wherein the calculation program uses the Implicit scheme ) And the cell roll of the protection unit; and a fourth device, in response to the third device, for calculating the photoacid substance concentration of the chemically multiplicative photoresist, wherein the calculation program uses the inclusion method and the diffusion coefficient. 13. The device according to item 12 of the scope of patent application, wherein the above-mentioned post-exposure baking process includes a heating state and a cooling state, and the heating state and the cooling state can be expressed by an exponential function. 14 · The device according to item 13 of the scope of patent application, wherein the initial parameters of the above-mentioned post-exposure baking process include room temperature, baking temperature, baking time, and the time constant of the exponential function. 15. The device according to item 12 of the patent application range, wherein the above-mentioned reaction constants and diffusion coefficients and their temperature factors can be expressed by Arrhenius expressions. 19 This paper size applies to China's national standard (CNS> A4 size (210X297mm) I order ^ (Read the notes on the back of the poem before filling out this page) 407291 Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A8 B8 C8 D8. The scope of patent application 16. For the device of the scope of patent application No. 12, in which the part of the diffusion coefficient and the cell concentration factor of its protection unit can be expressed using the exponential function. The device in which the above-mentioned concentration of the photoacid substance can be calculated using the diffusion coefficient. 18. For the device in the scope of claim 12 of the patent application, the above-mentioned post-exposure baking process can be divided into a plurality of periods, and the protection unit cell The concentration and the concentration of the photoacid substance can be calculated in each period of time. 1 9. For the device in the 18th scope of the patent application, wherein the cell concentration of the protection unit calculated in the third device is in the fourth device. Can be used to calculate the concentration of the photoacid substance. 20. For the device in the scope of patent application No. 18, the trapezoid method (trapezoi) dal method) for calculation. 2 1. If the device of the scope of application for patent No. 20, wherein the concentration of the photoacid substance in the first direction and the time is the intermediary period, can be obtained through a calculation program, wherein the intermediary period is the current The time slot is in the middle of the next time slot. —Installation ------ Order ------ line (#, 'Notes on the back of the fund before filling out this page) * 20 This paper is sufficient for China National Standard (CNS) A4 now (210X297 mm) 407291 C8 D8 VI. Patent application scope 22. For the device of patent application scope item 21, where the photoacid substance concentration in the second direction and the time is the next period It can be obtained through the calculation program, wherein the second direction is perpendicular to the first direction. 23. For a device in the scope of patent application No. 22, wherein the device further includes a fifth device, in response to the fourth device, for determining time In order to determine whether the concentration of the photoacid substance in the next period satisfies the convergence condition, when the concentration of the photoacid substance does not converge, the third device will respond to the fifth device and calculate the cell concentration of the protection unit again. The device of item 22, wherein the third device calculates the time as the protection unit cell concentration of the next period, and can be expressed using the photoacid substance concentration and the protection unit cell concentration of the current period and the next period. (* Please read first: read the precautions on the back before filling out this page) Packing --———— D,-° Printed by the Central Bureau of Standards, Ministry of Economic Affairs, Industrial and Consumer Cooperatives 21 This paper size applies to China's national standard (CNS ) A4 size (210X297 mm)