A7 B7 五、發明説明（） 發明領域： 本發明係與一種電路裝置有關，特別是有關於一種應 用於積體電路中之反熔絲（antifuse)裝置，可同時具有對反 熔絲裝置進行程式化及偵測功能的電路。 發明背景： 以目前的積體電路而言，在單一的積體電路晶片上可 包含有數百萬個，甚至是更多個的元件，在如此高的積集 度之下，製程的良率控制是極為重要的考量，任何晶片上 元件的瑕疵或製造時的缺陷，皆會導致晶片功能的受損， 而於品管檢測的過程中將其淘汰，使產品的生產成本增 本。然而，在如此高積集度及密集排列的元件之下，要達 成完全無缺陷的要求，在製程上有其實際的困難。 經濟部中央標準局貝工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 目前用以解決元件缺陷問題的方法之一，即是在晶片 上製作額外的備份元件，以取代有缺陷的元件，藉由應用 備份元件的技術，可大幅提昇產品的良率，也因此被廣為 應用。此一技術的主要應用之一，即是記憶體的元件製程， 在記憶體晶片的設計之中，會在原有的記憶體陣列之外， 增加數排及數列的記憶胞（memory cell)，而在製程完成之 後，會於晶片測試的過程之中進行元件及電路的功能測 試，以檢測出有缺陷的元件，並藉由變更電流路徑的方式， 以備份的元件取代有缺陷的元件。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） A7發明説明（ 經濟部中央梯準局貝工消费合作社印装 在傳 部分的電 換，一般 於晶片上 陷的元件 失效元件 而原本受 復。以具 代同一陣 目前 方式，來 然而，此 度亦欠佳 將其對應 射對準的 則在過高 到其他熔 時而設備 題。 在解 其中較為 可利用電 進行設定 統的晶片設計之中，會使用一種熔絲結構 流通路，以由電流流向的改變來完成元 而言，會形成包含有許多熔絲（fuse)結構的 ’每一熔絲結構有其對應的位址，當檢測 時，即會將對應其位址的熔絲燒斷，使原 的電流改為流向備份排或備份列中的儀份 損的晶片可經過此一燒斷炼絲的修復過程 有兩排及兩列備份元件的陣列而言，則可 列中多達四個的缺陷元件。 最常應用的熔絲設計之一，即是使用雷射 透過晶片上熔絲窗的結構，燒斷所指定的 種使用雷射的方式，是一相當耗時的程序 ，在檢測到有缺陷的元件之後，必須相當 位址的溶絲燒斷’在高密度排列的晶片上 精確度要求極高，其能量亦須有準確的控 或過低的能量下’可能會有熔斷木完全或 絲的問題，且逐一燒斷熔絲的方式，是一 成本較高的過程，而會有效率及可靠度不 來變更 件的替 熔絲區 到有缺 本逯往 元件， 加以修 用以取 能量的 熔絲》 ，可靠 準確的 ，對雷 制，否 是傷害 相當耗 高的問 決此問題的發展上，反炼絲（antifuse)的設.計，是 理想的選擇之一，反熔絲的設計是於晶片上製作 路加以程式化（programming)的反溶絲，也就是可 其通路狀態的反熔絲，藉由將反熔絲設定於通路 用中國國家標準（CMS〉A4規格（2l〇X297公釐） {請先閱讀背面之注意事項再填寫本頁)A7 B7 5. Description of the invention () Field of the invention: The present invention relates to a circuit device, in particular to an antifuse device used in integrated circuits, which can also have a program for the antifuse device. With detection and detection functions. Background of the Invention: In terms of current integrated circuits, a single integrated circuit chip can contain millions or even more components. With such a high degree of integration, the yield of the process Control is an extremely important consideration. Any defect in the components on the wafer or defects in manufacturing will cause damage to the function of the wafer, and it will be eliminated in the process of quality control inspection, which will increase the production cost of the product. However, under such a high degree of accumulation and densely arranged components, there are practical difficulties in the process to achieve the requirement of complete defect-freeness. Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shelley Consumer Cooperative (please read the precautions on the back before filling this page). One of the current methods to solve the problem of component defects is to make additional backup components on the wafer to replace the existing ones. Defective components, by applying the technology of backup components, can greatly improve the yield of products, and are therefore widely used. One of the main applications of this technology is the memory element process. In the design of the memory chip, rows and rows of memory cells will be added to the original memory array. After the manufacturing process is completed, the functional test of components and circuits will be performed during the wafer test to detect defective components, and the defective components will be replaced with backup components by changing the current path. This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X 297 mm) A7 Description of invention However, the original method was replaced. In the same way as the current method of the same array, however, the degree of its corresponding shot alignment is too low, and the equipment problem is too high to other melting time. In the solution, it is more possible to use electricity to set the system. In the design of the chip, a fuse structure flow path will be used to complete the change by the direction of the current flow. In terms of the formation of a fuse structure, each fuse structure has a corresponding bit. When testing, the fuse corresponding to its address will be blown, so that the original current is changed to the backup row or the damaged wafer in the backup row. The repair process of this burned wire can be For an array of two rows and two rows of backup elements, up to four defective elements can be placed in the row. One of the most commonly used fuse designs is the use of a laser to penetrate the fuse window on the chip and blow it out. All The fixed method of using laser is a rather time-consuming process. After the defective component is detected, it must be blown out at a considerable address. 'On high-density arrayed wafers, the accuracy is extremely high. The energy must also be controlled accurately or at too low energy. There may be problems with the fuses being completely or silky, and the way to blow the fuses one by one is a costly process, and there will be inefficiency and reliability. To change the fuse area of the part to the original component that is missing, and repair the fuse to obtain energy, it is reliable and accurate. For the lightning system, whether it is quite expensive to injure the development of this problem, The design of antifuse is one of the ideal choices. The design of antifuse is to make the antisolvent wire programmed on the chip, that is, the antifuse that can be used in its state. , By setting the anti-fuse to the Chinese national standard for access (CMS> A4 specification (21 × 297 mm) {Please read the precautions on the back before filling this page)
A7 —-------- B7 五、發明説明（） 狀態或短路狀態’即可完成所對應位址之元件的替換，而 藉由偵測反溶絲的狀態，即可決定電流的流向是否變更， 達到與原有熔絲結構相同的功能。 相較於須以雷射來進行修復製程的料結冑反溶絲 結構以電路的程式化方式來進行修復的製帛可提供更有 效率及較可靠的替換功能。$而，傳統反溶㈣電路設計 較為複雜’且每一反熔絲需配合使用為數極多的元件形 成應用上的一大限制。目此，目前丞需-種設計更為精簡 的反熔絲應用電路，以滷小撕俅^ ^ M减少所使用的兀件，降低所占用的 積想電路佈局面積。 發明目的及概诚： 本發明的目的為提供一種反熔絲裝置的應用電路。 本發明的另一目的為提供一種反熔絲之程式化及偵測 電路，使用較少的元件數，以增加積體電路的面積效率。 本發明的再一目的為提供一種反熔絲之程式化及偵測 電路’可達成以備份元件來替換缺陷元件的功能，增加積 體電路生產的良率。 經濟部中央標準局負工消費合作社印裝 • - Ϊ— n — - I n u--- I I I I -—訂 (請先閲讀背面之注意事項再填寫本頁) 本發明中反溶絲之程式化及偵測裝置可包含：一反熔 絲、一鎮定電路、一程式化電路及一重設電路；反熔絲可 程式化於一開路狀態及一短路狀態之間；鎖定電路則與電 源相接’並可偵測反熔絲之狀態以產生一輸出訊號；程式 化電路用以程式化反熔絲之狀態；並以一重設電路以重新 本紙張尺度通用中國國家標準（CNS ) Α4规格（2丨0><297公釐） 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（） 設定輸出訊號之狀態。 I式筋蕈說明 第一圖 顯示本發明中反熔絲之程式化及偵測電路 之示意圖。 發明謀細說明： 本發明中揭露一種反熔絲之程式化及偵測電路’可應 用於積體電路之中，以簡化的設計，降低所使用的元件數 目’減少所占用的晶片佈局面積。 參見第一圖所示，為本發明中反熔絲之程式化及偵測 電路1 0的示意圖，反熔絲之程式化及偵測電路1 0可包含： 一反炼絲12、一鎖定電路14、一程式化電路16、及一重設 電路18。 •反熔絲12為一可程式化的元件，藉由施加一指定的程 式化電麼’可變更其導通的狀態，在本實施例中，反熔絲 12可使用一電容式元件，由兩層導體層間夾一介電層來形 成。一般而言，此電容式元件的起始狀態為一開路狀態， 當欲變更其狀態時’可施加一電壓於其兩端，當所施加的 電麼超過一臨界電壓時，即會破壞兩導體層間的介電層， 使其形成一短路狀態。以本例中之電容式元件而言，一曰 其被設定為短路狀態，反熔絲12即永遠保持其短路狀態： 本紙張尺度適用中國國家標準（CNS ) A4规格（210Χ297公釐） (請先閲讀背面之注意事項再填寫本頁)A7 —-------- B7 V. Description of the invention () State or short-circuit state can complete the replacement of the component at the corresponding address, and by detecting the state of the anti-dissolving wire, the current can be determined. Whether the flow direction is changed to achieve the same function as the original fuse structure. Compared with the material-crusted anti-dissolving wire structure that requires laser to repair the process, the circuit-based method of repairing the system can provide more efficient and reliable replacement functions. However, the traditional anti-solvent circuit design is more complicated, and each anti-fuse needs to be used with a large number of components to form a major limitation on the application. For this reason, at present, an anti-fuse application circuit with a more streamlined design is required, which can reduce the number of components and reduce the occupied circuit layout area. Object and Summary of the Invention: The object of the present invention is to provide an application circuit for an anti-fuse device. Another object of the present invention is to provide an anti-fuse programming and detection circuit, which uses a smaller number of components to increase the area efficiency of the integrated circuit. Yet another object of the present invention is to provide an anti-fuse stylization and detection circuit 'which can achieve the function of replacing defective components with backup components and increase the yield of integrated circuit production. Printed by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs •-Ϊ— n —-I n u --- IIII -—Order (Please read the precautions on the back before filling this page) Stylization of anti-dissolving silk in the present invention And the detection device may include: an anti-fuse, a stabilization circuit, a stylized circuit and a reset circuit; the anti-fuse can be programmed between an open circuit state and a short circuit state; the lock circuit is connected to the power supply ' It can detect the status of the anti-fuse to generate an output signal; the programming circuit is used to program the status of the anti-fuse; and a reset circuit is used to reset the paper standard Common Chinese National Standard (CNS) Α4 Specification (2 丨0 > < 297 mm) A7 B7 printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention () Set the status of the output signal. I-type muscle mushroom description The first figure shows a schematic diagram of the anti-fuse programming and detection circuit of the present invention. Detailed description of the invention: In the present invention, it is disclosed that an anti-fuse stylization and detection circuit 'can be applied to an integrated circuit to simplify the design and reduce the number of components used' and reduce the occupied chip layout area. Referring to the first figure, it is a schematic diagram of the anti-fuse stylization and detection circuit 10 in the present invention. The anti-fuse stylization and detection circuit 10 can include: an anti-refining wire 12, a locking circuit 14. A stylized circuit 16, and a reset circuit 18. • The anti-fuse 12 is a programmable element, and the conduction state can be changed by applying a specified programming electric current. In this embodiment, the anti-fuse 12 can use a capacitive element, A layer of conductor is formed between a dielectric layer. Generally speaking, the initial state of this capacitive element is an open circuit state. When it is desired to change its state, 'a voltage can be applied to its two ends. When the applied electricity exceeds a critical voltage, the two conductors will be destroyed. The interlayer dielectric layer forms a short circuit state. In the case of the capacitive element in this example, once it is set to a short-circuit state, the anti-fuse 12 will always maintain its short-circuit state: This paper size applies to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) (please (Read the notes on the back before filling out this page)
A7 B7 經濟部中央標準局貝工消费合作社印製 五、發明説明（ 12之=二給:㈠接，並藉由馈測反炫絲 之狀態以產生一輸出訊號FB’而領定電路u於偵測反 溶絲12之狀態後，只要電源保持續供應 ：： 此狀態鎖$，提供-穩定不變的輪、此见珞將 叉出訊號FB。電濂ν〇於 :例中可應用一電壓源，以提供鎖定電路14操作時所需的 電源，並於程式化反溶絲12的過程之中，提供一將 12設定為短路狀態所需的電位， 隹本例中，電源Vp所提 供的操作電壓約為3.3伏特，而脒应 好而將反熔絲12設定為短路狀 態時所需的程式化的電壓…伏特，操作電愿及程式化 的電壓可視整想電路及反炫絲12設計的不同加以調整，並 不限於本例中所使用之電位。 鎖定電路14可包含-第一電晶體Ma、一第二電晶艎 14b、及一第三電晶體14c，第一電晶體⑷及第二電晶體 ⑷之閉極及没極交互連接’第一電晶艘“a及第二電晶艘 14b之源極並連接於電@ Vp，第一電晶艟143之茨極則與 反熔絲丨2相連，第三電晶趙14c則以其兩球連接於第二電 晶想14b之沒極及一接地端之間，第三電晶想之閉極 舆第一電晶體14a之汲極相連，而連至第三電晶艎的 接地端係透過程式化電路16中的一控制電晶體i6b來提 供。 程式化電路16係用以程式化反熔絲丨2之狀態，以將 其由原來的開路狀態設定為短路狀態，於本例令程式化電 路16可包含一第一電晶體16a以其兩端連接於反熔絲12 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） --------— (請先閲讀背面之注意事項再填寫本頁) " Λ7 B7 五、發明説明（） 的另一端、以及一接地端之間，並有一位址訊號ADD輸入 於第一電晶體16a之閘極’當要替換反熔絲12所對應之位 址的元件時，輸入此位址訊號ADD即可將反熔絲I]設定 為短路狀態。程式化電路16更可包含第二電晶艘16b，以 其閘極與位址訊號add相連’以控制接地端舆鎖定電路14 中第三電晶體14c之一端的連結。 重設電路18則用以重新設定輸出訊號FB,重設電路 可使用一電晶體18a以其兩端連接於輪出訊號fb、以及一 接地端之間，並有一重設訊號RST(reset)輸入於電晶艘l8a 之閘極。當重設訊號RST為高電位時，即可將輪出訊號FB 接地，重新設定輸出訊號FB為低電位。 本發明中反熔絲之程式化及偵測電珞1〇之操作，可説 明如下》在進行程式化時，輸出訊號FB可藉由輪入一重設 訊號RST將其接地，並於電源VP處提供一程式化所需的 電壓，在本例中即為5伏特，由於節點20之電位為低電位， 電晶體1 4a會開啟而使節點22之電位為高電位，電晶體1 4b 即於閘極的高電位下關•閉’而保持節點20之低電位。 經濟部中央標準局貝工消费合作社印— -~请先閱讀背面"浲意事項鼻填爲本頁> 當反熔絲1 2須保持其原來的開路狀態時’即可輸入一 低電位的位址訊號ADD ’而保持反熔絲1 2為開路狀態，而 不做此相對位址的元件替換。而當須進行相對位址的元件 替換時，可輸入一高電位的位址訊號ADD ’而開啟電晶體 16a，使反熔絲12兩端的電位成為約5伏特’將反溶絲12 内的介電層破壞，使其成為短路狀態或導通狀態。 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X297公釐） 五、發明説明（ A 7 B7 一旦反熔絲1 2成為短路狀態時，鎖定電路〗 吟即用 經濟部中央榡準局貝工消費合作社印製 做為一電流限制電路，當反熔絲1 2成為短路狀態時，^以 22成為低電位而開啟電晶體1 4b，使節點2〇成為古 點 位 關閉電晶體1 4a ’因而切斷流過反熔絲12的電流， M防止 電源V p因透過反熔絲12的接地，流過過高的電湓而a % /现rtq使電 位下降’而導致整個電路中其他許多個同時設定 絲，因電位不足而使程式化的過程受到影宰。 在反熔絲12完成程式化後，鎖定電路14則用於站 1¾ jRi] 反熔絲1 2的狀態，並鎖定此一偵測狀態而提供一恆定的輪 出訊號FB，而藉由輸出訊號fb的狀態，電路中即可決定 電流的路徑’而利用反熔絲1 2狀態的設定決定缺陷元件 替換。 在偵測過程時，也就是整個電路在正常的操作狀況 時’電源Vp可提供一電路的操作電歷，例如3.3伏特 而 位址訊號ADD則維持於高電位而使電晶艎1 6a及1 6b維持 開啟，以提供鎖定電路14接地端的連結。當電路開始運作 時’同樣利用重設電路18使輸出訊號FB的起始狀態為低 電位’而使電晶體14a開啟、節點22成為高電位，當反熔 絲12為開路狀態時，節點22保持高電位並使電晶體14b 維持關閉，輸出訊號FB即鎖定在低電位；而當反熔絲12 為短路狀態時’節點22則被接地而成為低電位、並使電晶 體14b開啟，節點20因而成為高電位，輸出訊號FB即鎖 定在高電位，而形成良好的偵測及鎖定的功能》 本紙张尺度適用中國國家標準（CNS ) A4規格（210x297公釐） f請先閲讀背面之注意事項再填寫本頁j .訂 "· Λ7 B7 五、發明説明（） 因此，本發明中反熔絲之程式化及偵測電路1 0以簡化 的電路，可同時提供程式化、電流限制、偵測、及鎖定等 的功能，可減少所使用的元件數及積體電路的面積，增進 其應用價值。 本發明以一較佳實施例說明如上，僅用於藉以幫助了 解本發明之實施，非用以限定本發明之精神，而熟悉此領 域技藝者於領悟本發明之精神後，在不脫離本發明之精神 範圍内，當可作些許更動潤飾及等同之變化替換，其專利 保護範圍當視後附之申請專利範圍及其等同領域而定。 ^^^1 n^i -·»^n. 1^ ^^^1 m m l^i \-J (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印装A7 B7 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (12 = 2 to: ㈠, and by measuring the state of the anti-dazzle wire to generate an output signal FB ', the circuit is obtained at After detecting the state of the anti-dissolving wire 12, as long as the power supply is continuously supplied :: This state is locked $, provided-a stable wheel, and the signal FB will be crossed. See the example below: A voltage source to provide the power required for the lock circuit 14 to operate, and to provide a potential required to set 12 to a short-circuit state during the process of stylizing the anti-solvent wire 12, in this example, the power supply Vp provides The operating voltage is about 3.3 volts, and the anti-fuse 12 should be set to the stylized voltage required when the short-circuit state is set ... volts, the operating voltage and the stylized voltage can be seen in the imaginary circuit and the anti-dazzle wire 12 The difference in design is adjusted and is not limited to the potential used in this example. The lock circuit 14 may include a first transistor Ma, a second transistor b14b, and a third transistor 14c, a first transistor⑷ And second electrode ⑷ closed and non-polar interactive connection The source of crystal ship "a" and the second crystal ship 14b are connected to the electricity @ Vp, the gate electrode of the first electricity crystal 143 is connected to the anti-fuse 丨 2, and the third electricity crystal Zhao 14c uses its two balls Connected between the second electrode of the second transistor 14b and a ground terminal, the closed electrode of the third transistor is connected to the drain of the first transistor 14a, and the ground terminal connected to the third transistor is transmitted through Provided by a control transistor i6b in the stylized circuit 16. The stylized circuit 16 is used to program the state of the anti-fuse 2 to set it from the original open circuit state to the short circuit state. The circuit 16 may include a first transistor 16a connected to the anti-fuse 12 at both ends. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ---------- (Please read first Note on the back, please fill out this page again) " Λ7 B7 V. Between the other end of the description () and a ground terminal, there is an address signal ADD input to the gate of the first transistor 16a when it is to be replaced When the component of the address corresponding to the anti-fuse 12 is entered, input the address signal ADD to set the anti-fuse I] to a short-circuit state. The stylized circuit 16 may further include a second transistor 16b, whose gate is connected to the address signal add 'to control the connection of one terminal of the third transistor 14c in the ground lock circuit 14. The reset circuit 18 is used for To reset the output signal FB, the reset circuit can use a transistor 18a with its two ends connected between the wheel output signal fb and a ground terminal, and a reset signal RST (reset) input to the transistor 18a Gate. When resetting the signal RST to a high potential, the wheel-out signal FB can be grounded, and the output signal FB can be reset to a low potential. The programming of the anti-fuse in the present invention and the operation of the detection circuit 10, It can be explained as follows. "During programming, the output signal FB can be grounded by turning on a reset signal RST, and a stylized voltage is provided at the power supply VP, which is 5 volts in this example. The potential of node 20 is low. Transistor 14a will be turned on and the potential of node 22 will be high. Transistor 14b will be closed / closed at the high potential of the gate to maintain the low potential of node 20. Printed by the Central Bureau of Standards of the Ministry of Economic Affairs, Shellfish Consumer Cooperative—-Please read the back " Impact Matters on this page > when the anti-fuse 1 2 must maintain its original open circuit state, 'you can enter a low potential The address signal ADD 'keeps the anti-fuse 12 open, and does not replace the component at this relative address. When the relative address component replacement is required, a high potential address signal ADD 'can be input to turn on the transistor 16a, so that the potential across the anti-fuse 12 becomes about 5 volts.' The electrical layer is destroyed, making it into a short-circuit state or a conducting state. This paper size applies the Chinese National Standard (CNS) A4 specification (21 × 297 mm) 5. Description of the invention (A 7 B7 Once the anti-fuse 12 is short-circuited, the circuit is locked. Printed by Beigong Consumer Cooperative as a current limiting circuit, when the anti-fuse 12 becomes short-circuited, the transistor 14 is turned on with a low potential of 22, and the node 20 becomes the ancient point closed transistor 1 4a. 'Therefore, the current flowing through the anti-fuse 12 is cut off, and M prevents the power supply V p from passing through the ground of the anti-fuse 12 and flowing too high an electric current while a% / current rtq causes the potential to fall', causing other things in the entire circuit. Many simultaneously set the wires, the stylization process is affected by the lack of potential. After the anti-fuse 12 is programmed, the lock circuit 14 is used for the state of the anti-fuse 12 and the lock is locked. A state of detection is provided to provide a constant revolving signal FB, and by outputting the state of the signal fb, the path of the current can be determined in the circuit, and the setting of the anti-fuse 12 state is used to determine the replacement of defective components. Process, that is, the entire circuit Under normal operating conditions, the power supply Vp can provide a circuit operating calendar, for example, 3.3 volts and the address signal ADD is maintained at a high potential so that the transistors 16a and 16b are kept on to provide a lock for the ground terminal of the circuit 14. When the circuit starts to operate, "the reset state of the output signal FB is also used to reset the initial state of the output signal FB to a low potential", so that the transistor 14a is turned on and the node 22 becomes a high potential. When the anti-fuse 12 is in an open state, the node 22 keeps the high potential and keeps the transistor 14b closed, and the output signal FB is locked at the low potential; when the anti-fuse 12 is short-circuited, the node 22 is grounded to a low potential, and the transistor 14b is turned on, and the node 20 thus becomes a high potential, and the output signal FB is locked at a high potential, forming a good detection and locking function. "This paper size applies to the Chinese National Standard (CNS) A4 specification (210x297 mm) f Please read the note on the back first Please fill in this page j. Order " · Λ7 B7 V. Description of the invention () Therefore, the stylization and detection circuit of the anti-fuse in the present invention is 10 to simplify the circuit, and the process can be provided at the same time. Functions such as protection, current limit, detection, and locking can reduce the number of components used and the area of the integrated circuit, and increase its application value. The present invention is described above with a preferred embodiment, and is only used to help understand The implementation of the present invention is not intended to limit the spirit of the present invention, and those skilled in the art can understand the spirit of the present invention and make minor modifications and equivalent changes without departing from the spirit of the present invention. The scope of patent protection depends on the scope of the attached patent application and its equivalent fields. ^^^ 1 n ^ i-· »^ n. 1 ^ ^^^ 1 mml ^ i \ -J (Please read the (Please fill in this page for attention) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs
1张規JI鶴_挪瞒φ禁丨 if 圖號對照說明： ίο 偵測電路 12 反熔絲 14 鎖定電路 16 程式化電路 1 8 重設電路 20,22 節點 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐）1 piece of JI crane _ concealed phi 丨 if the drawing number is compared with the description: ίο detection circuit 12 anti-fuse 14 lock circuit 16 stylized circuit 1 8 reset circuit 20, 22 nodes This paper standard applies to Chinese national standards (CNS ) A4 size (210X 297mm)