3653twf.doc/006 hi B7 _ 五、發明説明（/ ) ， 本發明是有關於一種晶片淸洗裝置，且特別是有關於 一種在顯影(Develop)製程中，導入空氣或氮氣等氣體，藉 以保護晶片背面（Backside)避免遭到晶片表面之顯影液 (Developer)或淸洗溶液溢流而污染，確保其潔淨度及品質 可以達到後續其他製程之要求。 微影（Photolithography)是整個半導體製程中，最舉足 輕重的步驟之一。凡是與金屬氧化半導體（Metal Oxide Semiconductor, MOS)兀件相關的，如·各層薄膜的圖案 (Pattern)及雜質（Dopants)的區域，都是由微影這個步驟來 決定的。而半導體製程通常是以所需要經過的微影次數， 或是所需要的光罩(Mask)數量，來表τπ：其難易程度。此外， 半導體元件積集度(Integration)之提昇，亦受微影製程發展 之影響。 進行微影製程時，除了做爲半導體元件基底(Substrate) 的晶片(Wafer)之外，所需具備的器材包括光源、光罩、光 阻(Photoresist)以及用來顯影的顯影液等。而微影的基本製 程則是由①光阻覆蓋（Coating);②曝光(Exposure)及③顯影 等三大步驟所構成。首先在晶片的表面覆上一層由感光材 料(Photo-Sensitive Material)所構成之光阻層。再利用光源 及光罩，將光罩上之圖案轉移至光阻層。然後使用顯影液 將光阻層上由光罩所轉移的潛在(Latent)圖案顯現出來。 進行顯影的方式有許多種，但是爲了配合微影製程一 貫式(In-Line)的作業，目前大都採用噴灑/混拌(Spray/Puddle) 的方式進行。這種方式可大致分爲三個階段。首先，將顯 3 (請先閱讀背面之注意事項再填寫本頁) .裝. 、11 線 經濟部中央標準局員工消费合作社印製 本紙浪尺度適用中國國家標隼（CMS ) Λ4規格（210X297公錄） 3653twf.doc/〇〇6 經濟部中央標準局員工消f合作社印製 _________ ]V 五、發明説明（夂） " ，影液噴灑在置於旋轉器（Spinner)上的晶片表面，然後使晶 片在靜止的狀態下進行所謂的混拌顯影（Puddle)。顯影完 成後’以淸洗溶液淸洗(Rmse)晶片表面，再進行旋乾（Spin Dry) ’便完成顯影的程序。 請參照第1圖，其所繪示的是習知一種顯影製程之示 意圖。其次請參照第2圖，其所繪示的是習知〜種顯影機 台晶片淸洗裝置之剖面示意圖。配合第2圖所示顯影機台 晶片淸洗裝置之剖面示意圖，並請參照第1圖之步驟1〇 , 首先提供一晶片200，在經過光阻覆蓋及曝光之後，將其 置於顯影槽的外杯（Outer Cup)210中，經由顯影槽內旋轉 器204的軸心所提供適當的真空度，將晶片200固定於旋 轉器204的卡盤(Chuck)202上。其中內杯206之開口邊緣 與固定於卡盤202上之晶片200形成間隙208。 其次’請參照第1圖之步驟12，將顯影液噴灑於晶片 200表面經曝光之光阻層(未顯示於圖中）上，於晶片2〇〇呈 靜止的狀態下，使顯影液與經曝光之光阻層產生化學反 應，進行混拌顯影。 然後請參照第1圖之步驟14，顯影完成之後，啓動旋 轉器204，藉由卡盤202帶動晶片200旋轉，並以上液體 導管（未顯耶於圖中）導入去離子水（Deionized Water, DI Water)，經由上噴嘴（未顯示於圖中）將去離子水噴灑於晶 片200表面，將晶片200表面之顯影液沖洗乾淨。在淸洗 晶片200表面的同時，經由顯影槽內杯(lnner Cup)206的下 液體導营212之下噴嘴(Nozzle)214，以去離子水沖洗晶片 4 本紙張尺度適用中國國家標隼（CNS)Λ4規格（210x297公浼） (請先閱讀背面之注意事項再填寫本頁) -裝. -9 線 3653twf.doc/〇〇6 Λ7 Η 7 經濟部中央標準局員工消费合作社印裝 五、發明説明（彡） ，200背面，避免晶片200表面之顯影液或去離子水污染晶 片200背面、卡盤202，以及後續進行顯影製程之晶片， 確保晶片背面之潔淨度可達後續其他製程之要求。 請參照第1圖之步驟16，晶片200之表面及背面經去 離子水淸洗之後，繼續以旋轉器204帶動晶片200旋轉進 行旋乾。 在顯影製程中進行混拌顯影時，晶片200是處於靜止 狀態。當噴灑於晶片200表面之顯影液過量，或者晶片200 經過其他製程使晶片200背面之表面張力改變等因素，仍 然會導致顯影液沿著晶片200表面流向晶片200背面，並 流過內杯206與晶片200所形成的間隙(Knife Edge)208， 造成晶片200背面及卡盤202之污染， 因此本發明的主要目的就是在提供一種晶片淸洗裝 置’可於晶片進行混拌顯影、淸洗顯影液或其他製程時， 將氣體導入內杯，使得內杯區域呈現微弱正壓，藉以保護 晶片背面，避免晶片表面之顯影液、淸洗溶液漫流或其他 雜質對晶片背面造成污染。 根據本發明之上述目的，提出一種在顯影槽的內杯上 加裝氣體導管，將氣體導入內杯，使內杯的氣體壓力略大 於外界壓力。因此氣體會從內杯經晶片背面，由間隙向外 逸出，可抑止晶片表面之顯影液或淸洗溶液溢流至晶片背 面，避免污染晶片背面、卡盤，以及後續進行顯影製程之 晶片。 爲讓本發明之上述和其他目的、特徵、和優點能更明 5 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） I ml - - I— I nn - I (請先間讀背面之注意事項再填寫本頁) 訂 線 3653twf.doc/006 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（令） ,顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖示之簡單說明： · 第1圖繪示習知一種顯影製程之示意圖； 第2圖繪示習知一種顯影機台晶片淸洗裝置之剖面示 意圖； 第3圖繪示依照本發明之一較佳氲施例，一種顯影製 程之示意圖；以及 第4圖繪示依照本發明之一較佳實施例，一種顯影機 台晶片淸洗裝置之剖面示意圖。 圖示之標記說明： 1〇~16 :習知顯影製程步驟 30〜36 :應用本發明之顯影製程步驟 200、400 :晶片 202、402 :卡盤 204、404 :旋轉器 206、406 :內杯 .208、408 :間隙 210、410 :外杯 212、412 :下液體導管 214、414 :下噴嘴 416 :氣體導管 實施例 請參照第3圖，其所繪示的是依照本發明一較佳實施 6 -------J—裝------訂--，--„--線 '- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公兹） 3653twf.doc/〇〇6 3653twf.doc/〇〇6 經濟部中央標準局負工消费合作社印製 —"-___________ H*? 五、發明説明（》） '…—… — ，例，一種顯影製程之示意圖。其次請參照第4圖，其所繪 示的疋依照本發明一較佳實施例，一種顯影機台晶片淸洗 裝置之剖面示意圖。 配口第4圖所示顯影機台晶片淸洗裝置之剖面示意 圖，並請參照第3圖之步驟30，首先提供一晶片400，在 經過光阻覆盖及曝光之後’將其置於顯影槽的外杯41 〇中， 經由μ!影槽內旋轉器404的軸心所提供適當的真空度，將 晶片400固定於旋轉器4〇4的卡盤402上。其中內杯406 之開口邊緣與固定於卡盤402上之晶片400形成間隙408。 其次’請參照第3圖之步驟32，將顯影液噴灑於晶片 400表面經曝光之光阻層(未顯示於圖中）上，於晶片4〇〇呈 靜止的狀態下，使顯影液與經曝光之光阻層產生化學反 應，進行混拌顯影。同時經由內杯406上的氣體導管416， 將氣體導入內杯406中，使得在內杯406區域的氣體壓力 略大於外界壓力，所導入之氣體將會經由晶片400的背面， 通過內杯406與晶片400所形成之間隙408向外逸出，其 中導入之氣體包括空氣或氮氣等。 在顯影製程中進行混拌顯影時，晶片400是處於靜止 的狀態。由於內杯406內的氣體壓力略大於外界壓力’因 此氣體會從內杯406經晶片400背面，由間隙408向外逸 出。當噴灑於晶片400表面之顯影液過量，或者晶片400 經過其他製程使晶片400背面之表面張力改變等因素’導 致顯影液沿著晶片400表面溢流時，由於導入內杯406之 氣體會沿著晶片400背面經間隙408向外逸出’因此可抑 7 本紙張尺度ϋ财關緖^ CNS)格（21GX297公沒)~ (請先閱讀背面之注意事項再填寫本頁) .裝- 訂 線· 3653twf.doc/006 Λ7 ΙΓ 五、發明説明（< ) ^""""" s止溢i)iL之通/#液流向晶片400有面’避免顯影液污染晶片 400背面、卡盤’以及後續進行顯影製程之晶片，以確保 晶片背面之潔淨度可達後續其他製程之要求。 然後請參照第3圖之步驟34，顯影完成之後，啓動旋 轉器404，藉由卡盤402帶動晶片400旋轉。並以上液體 導管(未顯示於圖中）導入淸洗溶液，經由上噴嘴（未顯示於 圖中）將淸洗溶液噴灑於晶片400表面，將晶片400表面之 顯影液沖洗乾淨，停止顯影反應機制’其中淸洗溶液包括 去離子水等。在淸洗晶片400表面的同時，經由顯影槽內 杯406的下液體導管412之下噴嘴414，以淸洗溶液沖洗 晶片背面，其中淸洗晶片背面之淸洗溶液包括去灕子水 等。 此外，在淸洗晶片同時，仍然利用氣體導管416，將 氣體導入內杯406，使內杯406內的氣體壓力略大於外界 壓力，因此氣體會從內杯406經晶片400背面，由間隙408 向外逸出，其中導入之氣體包括空氣、氮氣等。由於導入 內杯406之氣體會沿著晶片400背面經間隙408向外逸出， 因此可抑止淸洗顯影液之淸洗溶液溢流至晶片400背面， 避免污染晶片400背面、卡盤，以及後續進行顯影製程之 晶片，以確保晶片背面之潔淨度可達後續其他製程之要 求。 請參照第3圖之步驟36，晶片400表面及背面經淸洗 溶液淸洗之後，繼續以旋轉器404帶動晶片400旋轉進行 旋乾，以完成顯影製程。 8 -------' J — 装------訂--.-----·. τ 線 (讀先間讀背面之注意事項再填寫本貰) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公浼） 396400 3653twf.doc/0063653twf.doc / 006 hi B7 _ 5. Description of the invention (/), the present invention relates to a wafer cleaning device, and in particular to a gas such as air or nitrogen introduced during the development process to protect it The backside of the wafer is prevented from being contaminated by overflow of the developer or cleaning solution on the wafer surface, ensuring that its cleanliness and quality can meet the requirements of other subsequent processes. Photolithography is one of the most important steps in the entire semiconductor process. All areas related to Metal Oxide Semiconductor (MOS) components, such as the pattern and impurities of each layer of film, are determined by this step of lithography. The semiconductor manufacturing process is usually expressed in terms of the number of lithography passes or the number of masks required, as τπ: the degree of difficulty. In addition, the improvement of the integration of semiconductor devices is also affected by the development of the lithography process. During the lithography process, in addition to the wafer as a semiconductor element substrate, the equipment required includes a light source, a photomask, a photoresist, and a developing solution for development. The basic process of lithography is composed of three steps: ①Coating; ②Exposure; and ③Development. First, the surface of the wafer is covered with a photoresist layer composed of a photo-sensitive material. The light source and the mask are used to transfer the pattern on the mask to the photoresist layer. A developing solution is then used to reveal the latent pattern transferred from the photoresist layer by the photomask. There are many ways to perform the development, but in order to cooperate with the lithography process in-line operation, most of them are currently sprayed / mixed (Spray / Puddle). This approach can be roughly divided into three stages. First of all, it will display 3 (please read the precautions on the back before filling this page). The equipment is printed on the paper by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. It is applicable to the Chinese National Standard (CMS) Λ4 specification (210X297). (Record) 3653twf.doc / 〇〇6 printed by the staff of the Central Bureau of Standards, Ministry of Economic Affairs, F. Cooperatives. V. Description of the Invention (夂) ", the film is sprayed on the surface of the wafer placed on the spinner, The wafer is then subjected to a so-called "puddle" development in a stationary state. After the development is completed, the surface of the wafer is rinsed with a rinsing solution, and then spin dried, and the development process is completed. Please refer to FIG. 1, which shows a schematic diagram of a conventional developing process. Secondly, please refer to FIG. 2, which shows a schematic cross-sectional view of a conventional-type developing machine wafer cleaning device. With the schematic cross-sectional view of the wafer cleaning device of the developing machine shown in FIG. 2, and referring to step 10 in FIG. 1, a wafer 200 is first provided. After being covered and exposed by photoresist, it is placed in the developing tank. In the outer cup 210, the wafer 200 is fixed on the chuck 202 of the spinner 204 through a proper vacuum provided by the shaft center of the spinner 204 in the developing tank. The opening edge of the inner cup 206 and the wafer 200 fixed on the chuck 202 form a gap 208. Secondly, please refer to step 12 in FIG. 1, spray the developing solution on the exposed photoresist layer (not shown in the figure) on the surface of the wafer 200, and make the developing solution and the developing solution in a state where the wafer 200 is still. A chemical reaction occurs in the exposed photoresist layer, and it is mixed and developed. Then, please refer to step 14 in Figure 1. After the development is completed, start the spinner 204 to drive the wafer 200 to rotate by the chuck 202, and introduce the deionized water (DIionized Water, DI) from the above liquid conduit (not shown in the figure). Water), spray the deionized water on the surface of the wafer 200 through the upper nozzle (not shown in the figure), and rinse the developing solution on the surface of the wafer 200. While cleaning the surface of the wafer 200, the wafer is rinsed with deionized water through the nozzle 214 under the lower liquid guide 212 of the inner cup 206 of the developing tank 4 The paper size is applicable to the Chinese National Standard (CNS) ) Λ4 specification (210x297 cm) (Please read the notes on the back before filling out this page)-Packing. -9 line 3653twf.doc / 〇〇6 Λ7 Η 7 Printing by Employee Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs Note (i), the back of 200, avoid the developer or deionized water on the surface of wafer 200 from contaminating the back of wafer 200, chuck 202, and subsequent wafers for the development process to ensure that the cleanness of the back of the wafer can meet the requirements of subsequent other processes. Please refer to step 16 in FIG. 1. After the surface and back of the wafer 200 are rinsed with deionized water, the wafer 200 is rotated by the spinner 204 to spin dry. When the mixed development is performed in the development process, the wafer 200 is in a stationary state. When the amount of the developer sprayed on the surface of the wafer 200 is excessive, or the wafer 200 undergoes other processes to change the surface tension of the back surface of the wafer 200, factors such as the developer liquid still flow along the surface of the wafer 200 to the back of the wafer 200, and flow through the inner cup 206 and The gap (Knife Edge) 208 formed by the wafer 200 causes the back surface of the wafer 200 and the chuck 202 to be contaminated. Therefore, the main object of the present invention is to provide a wafer cleaning device that can perform mixing development and cleaning development on the wafer. In other processes, the gas is introduced into the inner cup, so that the inner cup area shows a weak positive pressure, thereby protecting the back surface of the wafer and avoiding the contamination of the back surface of the wafer by the developing solution, cleaning solution, or other impurities on the wafer surface. According to the above object of the present invention, it is proposed to add a gas duct to the inner cup of the developing tank to introduce gas into the inner cup so that the gas pressure of the inner cup is slightly higher than the external pressure. Therefore, the gas will escape from the inner cup through the back of the wafer through the gap, which can prevent the developer or cleaning solution on the wafer surface from overflowing to the back of the wafer, avoiding contamination of the back of the wafer, the chuck, and subsequent wafers for the development process. In order to make the above and other objects, features, and advantages of the present invention clearer 5 the paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) I ml--I— I nn-I (please first Note on the back of the occasional reading, please fill in this page again) Booking line 3653twf.doc / 006 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (order), easy to understand, the following is a preferred embodiment In conjunction with the drawings, the detailed description is as follows: Brief description of the diagram: Figure 1 shows a schematic diagram of a conventional developing process; Figure 2 shows a cross section of a conventional wafer cleaning device of a developing machine. FIG. 3 is a schematic diagram of a developing process according to a preferred embodiment of the present invention, and FIG. 4 is a sectional view of a wafer cleaning device of a developing machine according to a preferred embodiment of the present invention. schematic diagram. Explanation of the marks in the figure: 10 ~ 16: Known development process steps 30 ~ 36: Applying the development process steps 200, 400 of the present invention: Wafer 202, 402: Chuck 204, 404: Rotator 206, 406: Inner cup .208, 408: Clearances 210, 410: Outer cups 212, 412: Lower liquid conduits 214, 414: Lower nozzles 416: Gas conduits. Please refer to Figure 3 for an embodiment. It shows a preferred implementation according to the present invention. 6 ------- J--packing ------ order-, ------ line --- (Please read the precautions on the back before filling this page) This paper size applies to Chinese national standards ( CNS) Λ4 specification (210X297 kilometers) 3653twf.doc / 〇〇6 3653twf.doc / 〇〇6 Printed by the Consumers ’Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs— " -___________ H *? V. Description of the invention (") " … — — —, For example, a schematic diagram of a developing process. Secondly, please refer to FIG. 4, which shows a schematic cross-sectional view of a wafer cleaning device of a developing machine according to a preferred embodiment of the present invention. A schematic cross-sectional view of the wafer cleaning device of the developing machine shown in FIG. 4. Please refer to step 30 in FIG. 3. First, provide a wafer. 400, after photoresist coverage and exposure, 'place it in the outer cup 41 of the developing tank, and fix the wafer 400 to the rotator through the proper vacuum provided by the axis of the rotator 404 in the μ! 40 on the chuck 402. The opening edge of the inner cup 406 and the wafer 400 fixed on the chuck 402 form a gap 408. Secondly, please refer to step 32 in FIG. 3, and spray the developing solution on the surface of the wafer 400. On the exposed photoresist layer (not shown in the figure), the developing solution and the exposed photoresist layer are chemically reacted while the wafer 400 is at a standstill, and mixed and developed. At the same time, it is passed through the inner cup 406 The gas conduit 416 introduces gas into the inner cup 406, so that the gas pressure in the inner cup 406 area is slightly greater than the external pressure, and the introduced gas will pass through the back of the wafer 400 through the gap formed by the inner cup 406 and the wafer 400. 408 escapes outwards, and the gas introduced therein includes air or nitrogen, etc. When mixing and developing in the developing process, the wafer 400 is in a stationary state. Because the gas pressure in the inner cup 406 is slightly greater than the external pressure, the gas will From the inner cup 406 through the back of the wafer 400, it escapes outward from the gap 408. When the developer sprayed on the surface of the wafer 400 is excessive, or the wafer 400 undergoes other processes, the surface tension of the back of the wafer 400 is changed, and other factors cause the developer to move along When the surface of the wafer 400 overflows, the gas introduced into the inner cup 406 will escape along the back side of the wafer 400 through the gap 408 ', so it can suppress 7 paper scales, ϋ 财 关 绪 ^ CNS) (21GX297 public) ~ ( Please read the notes on the back before filling in this page). Binding-Threading · 3653twf.doc / 006 Λ7 ΙΓ V. Description of the Invention (<) ^ " " " " " sstop overflow i) iL Zhitong / # fluid flow wafer 400 has a surface 'to prevent the developer from contaminating the back surface of the wafer 400 and the chuck' and subsequent wafers for the development process to ensure that the cleanness of the back surface of the wafer can meet the requirements of subsequent other processes. Then, please refer to step 34 in FIG. 3, after the development is completed, the spinner 404 is started, and the wafer 400 is rotated by the chuck 402. The above liquid pipe (not shown in the figure) introduces the cleaning solution, sprays the cleaning solution onto the surface of the wafer 400 through the upper nozzle (not shown in the figure), rinses the developing solution on the surface of the wafer 400, and stops the development reaction mechanism. 'Where the rinse solution includes deionized water and the like. While cleaning the surface of the wafer 400, the back surface of the wafer is rinsed with a cleaning solution through a nozzle 414 under the lower liquid pipe 412 of the cup 406 in the developing tank, wherein the cleaning solution for cleaning the back surface of the wafer includes deionized water and the like. In addition, while cleaning the wafer, the gas pipe 416 is still used to introduce the gas into the inner cup 406, so that the gas pressure in the inner cup 406 is slightly greater than the external pressure, so the gas will pass from the inner cup 406 through the back of the wafer 400 to the gap 408. Outgassing, the introduced gases include air, nitrogen, etc. Since the gas introduced into the inner cup 406 escapes out along the back of the wafer 400 through the gap 408, it is possible to prevent the washing solution of the washing developer from overflowing to the back of the wafer 400, avoiding contamination of the back of the wafer 400, the chuck, and subsequent The wafers for the development process are used to ensure that the cleanliness of the back of the wafer can meet the requirements of other subsequent processes. Referring to step 36 in FIG. 3, after the surface and back of the wafer 400 are rinsed with a cleaning solution, the wafer 400 is further rotated by the spinner 404 to spin-dry to complete the developing process. 8 ------- 'J — equipment ------ order --.----- ·. Τ line (read the notes on the back and fill in this note before) 中央 Central Standards Bureau, Ministry of Economic Affairs The paper size printed by the employee consumer cooperative is applicable to the Chinese National Standard (CNS) A4 specification (210X297 cm) 396400 3653twf.doc / 006
Λ7 ]V 五、發明説明（~) ， 由上述本發明之較佳實施例可知，本發明之特徵是在 顯影槽的內杯中加上氣體導管，在顯影製程中導入空氣或 氮氣，用以隔離晶片背面與晶片表面溢流之顯影液或淸洗 溶液。因此應用本發明可以在顯影製程中’避免晶片表面 之顯影液或淸洗溶液溢流造成之污染，並可確保晶片背面 之潔淨度可達後續其他製程之要求。此外，本發明之裝置 亦可以應用於其他製程室(Chamber)中，在進行晶片淸洗步 驟時’避免被含有雜質之淸洗溶液污染晶片，確保晶片之 潔淨度及品質，以利後續製程之進行。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 經濟部中央標準局員工消費合作社印製 9 (請先閱讀背面之注意事項再填寫本页)Λ7] V 5. Description of the invention (~) According to the above-mentioned preferred embodiments of the present invention, it is known that the present invention is characterized in that a gas duct is added to the inner cup of the developing tank, and air or nitrogen is introduced during the developing process for Isolate the developer or cleaning solution overflowing from the back of the wafer from the surface of the wafer. Therefore, the application of the present invention can avoid contamination caused by overflow of the developer or cleaning solution on the wafer surface during the development process, and can ensure that the cleanness of the back surface of the wafer can meet the requirements of subsequent other processes. In addition, the device of the present invention can also be applied in other process chambers. During the wafer cleaning step, the wafer is not contaminated by the cleaning solution containing impurities, and the cleanliness and quality of the wafer are ensured, which is beneficial for subsequent processes. get on. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. Printed by the Employees' Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 9 (Please read the notes on the back before filling this page)
r ί 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210Χ297公浼）r ί The paper size applies to the Chinese National Standard (CNS) Λ4 specification (210 × 297 cm)