TW396271B - Scanning evanescent electro-magnetic microscope - Google Patents

Abstract

A novel scanning microscope is describe that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.

Description

Repair M: Repair M: Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention ([1) The protective component extends out of the coaxial cable, otherwise the coaxial cable will be open to the outside. 1 and 2 ′ A new electrical conduction protection assembly 16 is provided at the end of the probe tip 20 extension such that its outer edge is connected to the outer coaxial protective layer 17 and the ring 'or surround' of its inner edge. The probe tip is not electrically shorted to it. The conductive protection component 1 should be appropriately thin, at a level of 1 μm to avoid causing excessive losses. It is actually better to provide a low loss insulator such as sapphire. In essence, the outer protection 1 ^ _ is placed around the end portion 16 of the insulator, but has a hole or hole 22, and the probe can extend out of this hole without having to be electrically shorted to its protective layer. The holes are traditionally round, but they do not have to be round. This hole is smaller than the coaxial cable and a resonator used to generate evanescent waves. Conveniently, the end portion of the insulator forms a plane approaching a straight line perpendicular to the probe portion, as long as the sensitivity of the probe is maintained at an acceptable level and the Q factor is not attenuated, no matter what a tapered surface Part of the distance between the outer protective layer and the probe can be extended. Its Q factor is a figure of merit; it is equal to the ratio of the total energy in the resonator to the energy dissipated from the resonator (EtcHal / Edissipated). The Q 値 factor is a function of the geometry of the cavity, and tapering the interior wall of the cavity may reduce the Q 値 factor (like reducing sensitivity), which is not the case for any specified required measurement. accept. As shown in FIGS. 1 and 2, a sharpened metal tip 20 is a point-like evanescent wave transmitter and a detector implemented in accordance with the present invention, extending a barrier 16 at the end of the cavity 10 The cylindrical hollow or hole 22 is described in more detail below. Sample 80 has been placed properly and the paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297). (Please read the precautions on the back before filling this page)

Printed by A7 B7, Consumer Co-operation of the Central Bureau of Standards, Ministry of Economic Affairs ------ -------- V. Description of the Invention (/) This invention is sponsored by the US Government and is sponsored by the US Energy Agency and the University of California Under the contract No. DEAC03-76SF00098, it is completed by the operation of Lawrence Berkeley Laboratory. The United States Government may have unquestionable rights in this invention. This is serial number 08/717 '321, filed on September 20, 1996 and referred to the continuation of the combined application. Background of the invention The jaw field of the invention Generally speaking, the present invention relates to the detection of a scanning probe hidden micromirror, and more particularly to scanning evanescent near-field microwave and electromagnetic spectroscopy. DESCRIPTION OF RELATED PRIOR ART Scanning probe type microscopes have typically been used to produce a visual image of a sampled material. According to the parameters measured by the probe tip, the image obtained can reflect any of the different electrical or magnetic characteristics of the sample material. For example, its tip may be imaging of electron tunneling, atomic force, coupling or refraction of propagating or evanescent electromagnetic waves, or other parameters. The tip can be used by touching the sample or a short distance above the sample. Scanning probes. A thorough discussion of microscopy was published by R. Wiesendanger and published by Cambridge University in 1994, 'Scanning Probe Microscopy and Spectroscopy: Methods and Applications'. The results of improved scanning probe microscopes (SMPs) are almost Fully focused on improving their resolution and sensitivity. Although it is generally accepted that obtaining quantitative data to combine the details of their images is quite satisfactory.5 Two technical difficulties have hindered the development of such instruments. First of all 'Microscope detection signal' as obtained from SMPs' Normally — 3 (Please read the precautions on the back and write on this page first) The size of the paper used in this edition applies to Chinese national standards (CNS> A4 specifications (210XM7 mm) {A7 B7 : Amendment Supplement V. Invention Description (I i) The height of the resonator is an integer multiple of λ / 4, which is ηλ / 4, where η is an integer. If the resonator is an open resonator, then η Is an even integer; if the resonator is a closed resonator, η is an odd integer. The function of a coaxial cable instead of a resonator The resonator can be used with a standard Axis cable instead. Figure 16 shows an embodiment of the inventive probe tip, in which the probe tip uses a conventional coaxial cable instead of a resonator. An electromagnetic energy source 1 transmits electromagnetic energy to its cable. Coaxial cable There is an outer protective component 52 surrounding the insulator component 44 and the central conductive component 48. The central conductive component extends beyond the end of the coaxial cable, and a sharpened or slightly sharpened tip 60 is attached to it. At the coaxial portion of the cable The end of the barrier is a thin metal end. The barrier 46 is attached to the insulator, and the insulator is placed between the protective layer 52 and the central conductor 48. The thickness of the terminal barrier is the same as that of the conductive terminal barrier 16 at the end of the resonator. Dominated by considerations. The end barrier 46 at the end of the coaxial cable has a hole of sufficient size to allow the center cable 48 to pass through the end barrier 46 so that the center probe can be electrically shorted to its end barrier. Contains a coaxial cable probe. It also has a direct coupler 11 between the end barrier 46 and source 1. Connect the coupler 43_coupled electromagnetic wave from the source to the cable. The electromagnetic wave travels down the cable to the end and is reflected back by the barrier at the end. The interaction between the tip 54 of the probe and the scanned sample The effect is to modify the characteristics of the reflected wave. The reflected wave is connected to a detector 50 through a direct coupler, and 18 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please read the back first) Please pay attention to this page before filling in this page)-Install -------- Order ---------. Consumption Cooperation of Employees of Intellectual Property Bureau of the Ministry of Economic Affairs System A7 ___ B7 5. The invention description (>) is a function of the material's local anatomy and physical characteristics. Separating them requires measuring at least two independent signals. For example, in the use of a scanning tunneling microscope, the tunneling current is a function of both the state density and the tip-to-sample distance. A recently developed scanning near-field optical microscope is capable of measuring optical signals, such as the optical spectrum of luminescence or the optical scale of refraction, in addition to shear; it can also be used to determine the distance between the tip and the sample. Furthermore, in order to obtain quantitative information about the imaging of a substance sample, it is necessary to solve the complex electromagnetic field equations at the tip and the sample area. A review of this work is detailed in Rep. Prog. Phys., Vol. 657, 1996, by C. Girard and A. Dereux. Although numerical methods based on finite element analysis have been used to solve the field distribution around the tip of a near-field optical microscope, their numerical methods include complex calculation procedures, such as solving at a wavelength or smaller scale under actual boundary conditions. The Maxwell equation 'is not practical for routine applications. Because the microscope needs to be operated below a cut-off frequency, it suffers severe attenuation of the waveguide, typically a subtraction of 10 3 to 10 6 (RF Soohoo, _ J. Appl_ Phys. 33: 1276, 1962; EA Ash and G (Nichols, Nature, 237: 510, 1972) 'This issue is difficult to understand with regard to the work done in the past. In hole or tapered waveguide probes, the improvement in the resolution straight line results in a decrease in the sensitivity index. M. Fee, S. Chu, and TW Hansch, improved sensitivity and resolution to the micron level by using a transmission line probe with a reduced cross section (Fee, .M. Et al, Optics Commun, 63: 219 , 1998). In any case, further improvements in resolution are still accompanied by severe attenuation of the transmission line. Unshielded around the tip of the transmission line probe This paper is sized to the Chinese National Standard (CNS) 8-4 specification (2 丨 〇 < 297 mm), (please read the precautions on the back page first) .....- kmmmf order A7 B7: # ι £ {-I 补 T 本 ~ 〇 月 " £ V. Description of the invention (q)

For distance control. To reduce the effect of background brightness, we propose the use of Schwartzchild lenses, which have a dark center region to reduce the background of scattering. In addition, a longitudinal high-frequency vibration can be used to reduce far-field background effects. This high-frequency vibration should only detect the components of the optical signal, and its optical signal changes over a small length scale. This method considers the control of the tip-sample separation of a high-resolution SEMM. The high-resolution of the SEMM extends across a wide range of Z-tip-sample distances of the base combined with the electrical characteristics of the sample. The offset difference is measured to adjust. The location of a vibrating sample, such as placing a piezoelectric component under the sample, will cause the resonant frequency and its harmonics to change. These changes are measured using, for example, self-holding amplifiers. Changes in the resonance frequency will have a sharper distance dependency than the microscope signal and can be used for distance control. For a frequency offset from a slave similar to a power law, a change in f; at the frequency of the cavity's high-frequency vibrations will reversely change the other tip-sample separation factor. It is allowed to measure the sample characteristics and local anatomy at the same time. If the longitudinal high-frequency vibration is smaller than the tip-sample separation degree, the total change of the obtained signal will be small. Frequency offset and harmonic intensity are independent of the dielectric constant and tip-sample distance g, but two independent equations are derived: 引 e, g) (2〇) Qiu Shang = f2 (e, g) dS U (21) 49 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) Loading ·! ------ Order ------- -Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, printed A7 _ B7___________. V. Description of the invention (4) The far-field wave propagation component severely limits the resolution of the microscope 'and especially Ground interference quantitative exercise. There is a high demand for a scanning probe microscope ' that is capable of imaging close-ups below a micron and additionally capable of performing quantitative measurements on the physical properties of the close-up of the image. Invention of the invention The invention includes a near-field scanning evanescent wave microscope 'in which the probe tip of the probe microscope mainly emits an evanescent wave' and the emission of interference propagation waves therein is minimized. The propagating wave has a low resolution and the evanescent wave has a high resolution. This characteristic is extremely difficult for quantitative measurement, of which only the near-field evanescent wave is modularized. A high-resolution image was generated by scanning a sample on the invented microscope using a novel evanescent wave probe. Furthermore, the microscope of the present invention provides a complex impedance 値 'calculated from the measured data, and the complex impedance 値 is related to the image characteristics analyzed. Complex impedance, including dielectric constant, loss tangent function, and conductivity coefficient, can be measured from materials with characteristics ranging from insulators to superconductors. The microscope of the present invention enables quantitative measurement of dielectric characteristics and surface resistance 値 with a resolution lower than micrometers. The electrical characteristics of the sample are measured by tracking the resonance frequency (fr) and quality factor (Q) of a resonant coaxial cavity connected to the tip. An embodiment of the SEMM includes a λ / 4 coaxial resonator that operates at a frequency (fr) that is approximately IGhZ and is connected to a sharp tip, where the sharp tip protrudes from a narrow hole. When the probe tip approaches a sample, the sum Q shifts. The microscope of the present invention can ______5 _

^^ 尺 ^^ Applicable to Chinese national standards (CNS > A4 specifications (21QX297 male H (please read the precautions on the back first # write this page)

5. Description of the invention (Hi) where f ,. is described in the previous equation 5. Bring equation 5 into equation 20, Af = fr-f0. In addition, the denominator f | in Equation 5 is replaced by the heart. Due to the relative size of the number, its result will have a non-negligible effect. Equation 5 solves fV and uses it as Equation 20. Equation 21 is a derivative of g. Equations 20 and 21 are solved at the same time to obtain the dielectric constant, ε, and the gap distance 'g. The description of the exemplifying embodiments and the best mode of the invention are not intended to limit the scope of the invention. Various modifications, structures, and equivalent devices can be used without departing from the true spirit and scope of the attached patent application. [Element Symbol] (Please read the precautions on the back before filling this page) Μ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 10 Microwave cavity 1 2 Loop line input 14 Loop line output 16 Terminal barrier 17 Protection component 18 Center metal conductor 19 Sharpened tip 20 Sharpened metal tip 2 1 Sapphire disc 2 2 Hole 3 0 Generator 3 1 Contact 50 ---- Order ---------------- ------ -— ^ -nn-This paper size is applicable to China National Standard (CNS) A4 (210x297 mm) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (f) The measured sum Q offset is converted into the electrical parameters of its sample. Since the extent of the field distribution is judged by its rather small tip radius, this microscope can have a resolution below micron. For non-conductive samples, the interaction between the probe tip and the sample is determined by the dielectric constant and tangent loss function near the sample. For metallic samples, the interaction depends on the surface resistance of the sample. The inclusion of either a resonator or a probe with a conventional coaxial body is a key feature of the invention's invention. An important and novel feature of the probe tip is a conductive end barrier with a hole. The central conductive component of a coaxial cable or resonator extends out of the hole of the barrier without shorting to the barrier. The key of another characteristic of the microscope of the present invention is to calculate the planned components to convert the change of the measured resonance frequency (or reflected electromagnetic wave) and the change of the measured figure of merit into the quantitative electrical characteristics of the sample parameter. Another important feature of the microscope of the present invention is a method for maintaining a fixed distance between the tip and the sample when a measurement scan of the sample is performed. Brief Description of the Drawings Figure 1 is a schematic diagram of various components 1 including an imaging evanescent near-field microscope system. FIG. 2 is a schematic diagram of various groups including a quantitative evanescent near-field microscope system. — Figure 3 shows an image of a thick sample touching the tip of a probe. . 其 虫 ._, q.n. Series represent the charge distribution at the tip; qn ’series represent non-conductive samples 6 ___---_, τ (Please read the precautions on the back first to write this page)

This paper size applies to China National Standard (CNS) A4 (2 丨 0X297mm) A7 B7

丨 Correction 丨 Supplement I This year, the fifth invention description Coaxial wiring 3 4 Diode 4 0 Detector 4 2 Direct coupler 4 3 Direct coupler 4 4 Insulator assembly 4 6 Metal terminal barrier 4 8 Center conductor 5 0 Data acquisition Unit 5 2 External protective component 5 4 'Probe tip 6 0 Computer 7 0 Image display 8 0 Sample 9 0 Stepping mechanism 10 0 Controller (Please read the precautions on the back before filling this page) -Order i ------- f.rl > / Γ. '· Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 51 This paper size applies to the Chinese National Standard (CNS) A4 specification (2) 0 x 297 mm ) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs.-: A7 B7 V. Description of the invention (f) Polarized utility of the book; and qn '^ qn in the sample department. ____. A.a.a ..... Figure 4 shows an image with a gap structure = the charge m is strictly between the contact probe tip and the thick sample. Nos. Qn, qZ and qn '' have the same meanings as in FIG. Figure 5 is a graph showing the measured and set resonance frequency as a function of distance, and the distance is the distance between the probe tip and the magnesium oxide (Mgp) single crystal sample. Figure 6 shows the distribution of the image charge of the tip-sample structure. The worm sample includes a Lime _ [§1) 二 _ 以 _ and a yaxia second marriage set on the probe on a thick base (ε2). The gap (g) between the tip and its film surface is in it. The symbols qn, qn ', and qn' 'have the same meanings as in FIG. 3. Demonstrates the polarizing effect of non-conductive films that are sensitive to the location. Column "qn" g represents the reaction on the film from the i-based base. It represents the far-distance drawing from the polarized base-...............--........ ............................... response above the tip, and qn ' The "" 'series indicates the polarization effect of non-conductive films caused by qn' '' and so on. This analysis is similar to the three-mirror system in optics. Brow 7 shows the essential spatial resolution of the SEMM, which is a function of the dielectric constant, with the tip radius, R0, as the unit. Figure 8 shows the multiple image charge analysis of the tip-sample interaction between probe tip and conduction II; Yangben. Figure 9 shows the surface magnetic field distribution of the conductive material around the probe. Figure 10 shows the radius distribution of the magnetic field on the surface of the conductive material around the probe for different probe tip radii, a〇. ---- -7 _____ The scale of this paper is applicable to China's national operations (CNs) A4 specification (210X297 mm) J — ---: -------- (Please read the precautions on the back to write this page)

n -1 I 'A7 __ ^ __ B7 ____._ 5. Description of the invention (') Figure 11 shows the data points measured from the SEMM signal (the best calculation curve for the triangle ifi, which is the probe tip and a copper sample The function of 闾 -gap between is calculated using the resonance frequency equation 12. Figure 12 shows the straight material point (triangle) from the SEMM signal i measuring dish and an optimal calculation curve. The function of the scent + gap between the tip of a needle and a copper sample is calculated using the figure of merit equation 19. Figure 13 shows the spatial spectrum of the magnetic field distribution on the surface of five different types of conductive materials. Figure 14 shows the power dissipation in a conductive sample, S, a is the number of faces, where ao is the ratio of the gap distance to the probe tip radius, and Figure 15 shows LiNb03 with a periodic polarization range on the left. Sample " · graphs. The images on the right are the first harmonic images obtained at the same time. Among them, the effects of the sample · probe geometry · graphs have been eliminated. These images are used by Po Ming. Feedback control Zheng component to control the distance from the sample to the tip The result. Figure 16 shows an embodiment of the probe tip of the present invention, the probe tip of which contains a coaxial cable instead of a resonator. Figure Π shows the frequency change for a known metal-is a. This curve is a function of the gap distance. This curve is useful for correcting the diline of the gap regulator. Figure 18 shows the results obtained by imaging the conductive silver portion using SEMM. The silver portion has Different height but fixed conductivity coefficient. 'Figure I9 shows the use of SEMM to make the conductive metal part image ^ (CNS __ 「A4g (210x2 ^^) -------- (Please read the note on the back first Matter τ

It I ^! This page)

1T printed by the China Consumers' Cooperatives of the Ministry of Economic Affairs and the Central Consumer Standards Cooperative Bureau of the Ministry of Economic Affairs and printed by the Consumer ’s Consumers Cooperative Association Λ7 B7 5. The results of the invention (γ) show that the metal parts have different heights and different conductivity coefficients. section. Detailed Description of the Invention_ Part of the present invention is described in the co-examination application No. 08/717 '321 and T. Wei and X.-D Xiang described in Appl. Phys. Lett ·' 68 '3506 (1996) Made at least one embodiment. An image resolution of approximately 100 nm in a non-conductive material has been achieved with a sensitivity of approximately 1.0 (T3). The present invention improves the visual image resolution of a scanning evanescent electromagnetic microscope 'and extends its use to a quantitative microscope detection essential Simultaneous measurement. Its microscope refers to a SEMM and its substitutes, and “SEMM originally refers to a scanning evanescent microwave microscope.” Because its microscope is not limited to the field of microwaves, it refers to “scanning evanescent "Electromagnetic microscopy". Using SEMM, quantitative microscopy can obtain multiple electrical impedances of non-conductive, ferroelectric, and conductive materials at resolutions below micron. The use of SEMM is not limited to the microwave field. More precisely In other words, the electromagnetic frequency of the invented microscope is limited by the electron mobility of the sample measured at the high end (that is, the material's ion body frequency), and by the probe tip resonance hole at the low end. Part of the actual physical size. For a copper sample, the frequency range from infrared to microwave in the electromagnetic spectrum can be used Scanning evanescent microscope. If the resonance is replaced by a coaxial cable with an end barrier connected to a coaxial protective component, the low end of the measurement frequency must be dc. To understand some of the basics of this invention for reviewing the evanescent microscope inspection Property 9 This paper is again applicable to the ten national standards (CNS> Λ4 specification (210 X 297 mm) ί Please read the notes on the back Λ write this page} Γ Order printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economy Λ7 ______________ B7 ___ ^ _ 5. The invention concept (g) is helpful. The evanescent wave in this article refers to the electromagnetic wave represented by the imaginary wave vector, not from the dissipation. In fact, the evanescent electromagnetic wave Is the photon equivalent of the quantum mechanical electron wave in the classical band gap region (within a screen wall). In the far-field description of the electromagnetic wave, a set of orthogonal characteristic functions in Hilbert space is selected to As plane waves, and its wave vector is any real number that satisfies the Helmholtz equation (thus, these plane waves are propagating waves). A broadcast wave (for example, a propagating spherical wave from a point source) can be extended to the superposition of these plane waves. The magnitude of the wave vector is determined entirely by frequency and velocity according to the Maxwell equation, that is, k = 27i ( sp / c) 1/2 = 27ia = (kx2 + ky2 + kz2) 1/2. For propagating waves, kx, 1 ^, and kz are real numbers and must be smaller than k 于 (k = in free space kQ). These waves can only be resolved at the level of λ. In any case, these waves cannot be used for reconstruction, such as a spherical wave, whose wavefront has a radius smaller than the wavelength λ. A set of applicable and complete Hiab The special space should contain several plane waves, and its wave vector is an arbitrary complex number that satisfies Maxwell's equation to establish such a spherical wave. Because imaginary vectors are allowed, the constituent elements (kx, ky, and kz) can be arbitrary 値 and still satisfy the Maxwell equation. Here the horizontal factor kr = (kx2 + ky2) 1/2 "plane waves" larger than k 値 will have a higher horizontal resolution (at the level of 1 / kr). In any case, since they must have an imaginary component kz to satisfy the Maxwell equations, these waves are "ephemeral" and cannot propagate much larger than a wavelength λ. Different evanescent wave microscope inspection methods use different tools to obtain strong evanescent waves and the strong interaction between the evanescent wave and the substance being examined. For example, _10__ with a radius of Γ («λ)

i Paper size applies Chinese National Standard (CNS) Α4 specification (210 × 297 male H (please read the note on the back page first). Clothing. Order printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. A 7 _ B7 I. " —. '.. 5. Description of the invention (7) A metallic spheroid or tip will produce an evanescent wave (to form a spherical wave on the metal surface and meet the boundary conditions), and its wave vector ranges from kr ~ 1 / r and the resolution is up to ~ r. Since the effective tip radius is reduced due to the polarization effect, the interaction between the tip and the sample (with a high and effective dielectric constant) can further increase the high-kr factor and resolution Because these waves attenuate more than a distance of r in free space, their samples must be placed within the r range of the tip to get a strong interaction. It should be noted that since ke = 2Tcae in the conductive material Its 値 is considerably larger than 値 in free space, so these waves need not be evanescent in a conductive material. The invented scanning ephemeral microscope uses an evanescent wave to image its surface at high resolution, and In order to achieve the detailed measurement of the complex electrical impedance quantitative analysis in the image. The invented instrument uses the near-field interaction between the evanescent wave around the tip and the sample to be scanned. Figure 1 shows the invented near-field microscope system, The system uses a novel evanescent probe architecture including a microwave resonator. The resonator is a microwave cavity 10 as shown, which has a generator 30 electrically connected to the cavity 10 for supplying an input signal. Its signal goes through a coaxial connection 32 to a connected loop line input 12 on the cavity. Cavity 10-A connected loop line output 14 is connected to a detector 40 via a second coaxial line 42. The detector 40, in turn Provide the output signal to a data acquisition unit 50 ° The data from the data acquisition unit 50 is then input to a computer 60, which converts its data into a visible image and transmits it to an image display 70 connected to the computer 60. Except Mechanisms other than connected loops or tuned loops can be used to couple energy to and from the resonant cavity 'as detailed —__ · _11 ______ Paper size applies Chinese National Standard (CNS) A4 (210X297 mm) 7 4--rI-^ ----- J!. (Please read the precautions on the back to write this page) Order · Central Bureau of Standards, Ministry of Economic Affairs Printed by Employee Consumer Cooperatives A7 B7 V. Invention Description (10) is described in D. M. Pozar, "Microwave Engineering" "In a Book" (Addison-Wesley, New York, 1990) Structure of the Tip · One of the best-known probe tips contains an open-ended coaxial cable. The coaxial cable includes a center wire surrounded by an insulator and enclosed in an external screen wall. This cutting-edge version produces a near-field evanescent wave and a far-field evanescent wave; the near-field evanescent wave must not propagate more than a few wavelengths (λ) until it is attenuated and a high-resolution measurement is made. Propagating waves are not desirable because they interfere with near-field evanescent waves. In order to minimize the propagation wave 'investigators try to use coaxial cables with small and small diameters' but the result is a large amount of energy loss and a difficult physical architecture is needed to avoid between the protective layer and the problematic centerline Electrical damage. Due to practical limitations in the design of conventional coaxial cable, the inventor developed a structure that sharpened the centerline and extended a distance from the protective layer, or a sharpened tip was mechanically and electrically connected to the centerline. When the hole on the left allows far-field propagating waves to be transmitted to the sample and dominates near-field propagating waves, in order to minimize any electromagnetic field generated between the probe tip and the external protective end, an additional inventive protective component Attach to the bottom edge of the coaxial cable. In addition, the inventor added a resonator directly near or on the tip of the probe, which enables it to generate and detect evanescent waves with better efficiency and sensitivity, although its resonator is for every application It is not necessary. The invented SEMM tip limits the generation of propagating waves so that it can effectively achieve high-resolution evanescent wave measurements. A feature of the tip that was invented to limit the far-field propagation wave is a conductive protection component, which guarantees that the 12 papers are again applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the note on the back first Matters written on this page), 1T

Hr Repair M: Repair M: Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention ([1] The protective component extends out of the coaxial cable, otherwise the coaxial cable will be open to the outside. 1 and 2 ′ A new electrical conduction protection assembly 16 is provided at the end of the probe tip 20 extension such that its outer edge is connected to the outer coaxial protective layer 17 and the ring 'or surround' of its inner edge. The probe tip is not electrically shorted to it. The conductive protection component 1 should be appropriately thin, at a level of 1 μm to avoid causing excessive losses. It is actually better to provide a low loss insulator such as sapphire. In essence, the outer protection 1 ^ _ is placed around the end portion 16 of the insulator, but has a hole or hole 22, and the probe can extend out of this hole without having to be electrically shorted to its protective layer. The holes are traditionally round, but they do not have to be round. This hole is smaller than the coaxial cable and a resonator used to generate evanescent waves. Conveniently, the end portion of the insulator forms a plane approaching a straight line perpendicular to the probe portion, as long as the sensitivity of the probe is maintained at an acceptable level and the Q factor is not attenuated, no matter what a tapered surface Part of the distance between the outer protective layer and the probe can be extended. Its Q factor is a figure of merit; it is equal to the ratio of the total energy in the resonator to the energy dissipated from the resonator (EtcHal / Edissipated). The Q 値 factor is a function of the geometry of the cavity, and tapering the interior wall of the cavity may reduce the Q 値 factor (like reducing sensitivity), which is not the case for any specified required measurement. accept. As shown in FIGS. 1 and 2, a sharpened metal tip 20 is a point-like evanescent wave transmitter and a detector implemented in accordance with the present invention, extending a barrier 16 at the end of the cavity 10 The cylindrical hollow or hole 22 is described in more detail below. Sample 80 has been placed properly and the paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297). (Please read the precautions on the back before filling this page)

Printed by employees of the Central Bureau of Standards of the Ministry of Economic Affairs on consumer cooperation A7 B7 V. Description of the invention (p) Adjacent to the sharpened tip 20. The sample 80 is mounted on a movable target plate or a stepping mechanism 90, and can be moved in the X, or Y or Z axis by an XYZ scanning controller 100. The scanning controller 100 is controlled sequentially by a signal from the computer 60. The microwave generator 30, the detector 40, the data acquisition unit 50, the computer 60, the display 70, the movable target holder 90, and the X-Y-Z scanning controller 100 are all composed of commercially available equipment. For example, the microwave generator 30 can be purchased from a Programed Test Source Company, such as model PTS1000; the detector 40 can be purchased from Pasternack Enterprises, such as model PE800-50; The acquisition unit 50 can be purchased from National Instrument, such as model PC-TI002150; the computer 60 can be composed of any standard programmable computer; the display 70 can be composed of any commercially available fluorescent screen; removable The target plate or stepping mechanism 90 is available from Ealing Company, such as model 61-0303; and the XY scanning controller 100 is available from Ealing Company, such as model 37 -1039. The design principle of a quarter-wavelength cavity, such as cavity 10, can be found in the "Radio Engineering Handbook" by F.E. Terman. The cavity 10 contains a standard quarter or half-wavelength cylindrical microwave cavity resonator. The resonator has a central metal conductor 18, and the central metal conductor 18 has a tapered end 19. Alternatively, a sharpened metal tip or probe 20 is mounted on the tapered tip 19. A non-essential gasket, made of an insulating material such as Teflon, can be used to help maintain the center position of the center conductor 18 to be coaxial with the cavity. ^ 14 — 'This paper size applies to China National Standards (CNS) Λ4 specification (21〇X 297 mm) (Please read the note on the back page first). Binding. Order A7 B7 V. Description of the invention (〇) As shown, the probe tip 20 extends through and protrudes from a hole 22 formed in the end barrier 16. Thickness of the metal probe tip The metal probe tip 20 has a sharpened end, and the diameter thereon can be as thin as about 100 angstroms. The diameter of the sharpened tip of tip 20 will usually change from as small as 100 angstroms (10 nm) to as large as 100 μm, and the preferred range is from about 200 angstroms (20 nm) to about 20 μm . The sharpened metal probe tip 20 may be shaped such that, for example, by chemically etching a portion of a metal wire, the metal wire may have a diameter from about 1 μm to about 0.2 millimeters (mm) before the electrochemical etching. The sharpened metal probe tip 20 can be connected to the tapered tip 19 of the center conductor 18 by welding or any other suitable method; the welding or suitable method will be between the tip 20 and the tapered probe tip 19 Provide a strong mechanical and electrical contact. The diameter of the hole In experiments, the smallest diameter of the hole 22 has been determined as the smallest diameter to maintain a high Q 値 factor and high resonator sensitivity. The hole must be small enough not to emit a propagating wave, which will interfere with the measurement of evanescent waves. In order to maintain a high Q 値, the minimum diameter of the hole 22 should be larger than the thickness of the terminal barrier 16. In other words, the end barrier thickness t divided by the hole diameter d must be less than l (t / d «l) to maintain a high Q 的 factor (or low loss) of the resonator. Conceptually, the terminal barrier should be a 1-2μm thick conductive film (silver or copper) on the low-loss insulation board (~ 1mm thick); the insulation board such as sapphire or L2A103 is used to reduce the thickness t , While keeping its hard course ____15____ ^ Paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) Α7 Β7 V. Description of invention (\ ψ). Degree (mechanical vibration is not required) ° Hole diameter There is also the diameter of the metal probe tip, which passes through and protrudes beyond the hole 22. Therefore, the smallest hole diameter is usually at least about 200 angstroms (20 nm). In any case, if the diameter of the hole 22 is too large, the resolution will decrease. In any case, it has been known that the diameter of the 'hole 22 can be as large as 3 mm while still maintaining a satisfactory resolution. Typically, the diameter of the holes 22 ranges from about 500 angstroms (50 nm) to about 1 mm. Jing vortex # The extension of the metal tip that empties the hole is printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the textbook of the Weeping Matters first), as shown in Figure 1 and 2 The hole 22 'extending through and protruding from the original column is in the end barrier 16 of the resonator 10. Why the probe tip 20 must extend out of the hole in the end barrier 16 of the resonance gas 10 22—The reason for the distance comparable to the diameter of the hole 22 according to the present invention is to reduce the effect of hole size on the resolution. In other words, instead of terminating at the hole 22, as in the conventional technology architecture, The reason that the pointed metal tip 20 extends through and protrudes the hole 22 is to provide more spatial resolution, and its size is preferably determined by the radius of the probe tip 20 rather than by the diameter of the hole 22 Decided. The extension of the probe 20 protruding from the hole 22 is also helpful and convenient for scanning the sample. The length of the portion of the sharpened metal probe tip 20 extending through and protruding from the hole 22 is related to the hole Diameter 22. Warp And the length of the probe tip 20 protruding from the hole 22 ranges from about 1/3 of the diameter of the hole 22 to about 3 times the diameter of the hole 22. A better ratio of the extension length to the diameter of the hole has been known It is about 1. The extension length should be further selected so as not to cause a huge background signal (from the paper size of 16 papers to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)) Consumption cooperation printing A7 Β7 V. The length of the invention (induced by the radiation of the interaction hole), while still generating a strong signal through the tip-sample interaction. The resonator still refers to In the embodiment of FIGS. 1 and 2, the cavity 10, including the protective layer 32 and the end barrier 16, is formed of metal, and the stronger magnetic material is suitably composed of a diamagnetic material, such as copper or silver. So that the modulation magnetic field can be used on the connection of the cavity 10. The diameter (or the diameter of the size change) of the cavity 10 will determine the Q factor of the cavity, and the length of the cavity 10 will be equal to the wavelength (in Total Frequency) divided by 4, which is the cavity length = λ / 4 (a quarter-wavelength cavity). To provide an ideal Q factor, the cavity diameter should be large enough, and the cavity has 10 pairs. The diameter ratio of the center electrode 18 should be about 3.6. The Q 値 of a microwave cavity or resonator can be defined as the figure of merit of the cavity, and it should be kept as high as possible. By adding a resonator The input microwave power and unloaded Q 値 are denoted by Qu to improve the sensitivity of the near-field microwave. The resonator has an optimal coupling, which is to adjust the coupling strength so that the loaded Q 强度 is recorded as Q, is 2/3 of Qu. The volume of the cavity of the resonator is filled with a non-conductive material, and a material with low loss is preferred. The resonance wavelength is directly proportional to the square root of the relative permittivity of the full cavity, which is λ = ε1 / 2 / λ〇. The relative dielectric constant is proportional to the dielectric constant in the vacuum. Therefore, using a dielectric material with a large ε will reduce the resonant frequency of the cavity or reduce the size of the cavity required for a given resonance range. Sample dielectric materials that can be conveniently used to fill the cavity of the resonator include air, galactamate (SrTi03), and sapphire (Α12〇3). _______17__ This paper size applies to Chinese National Standard (CNS) Α4 size (210X29 * 7mm) (Please read the note on the back first to write this page) Acoustic, ιτ A7 B7: Correction Supplement V. Invention Description (I i) Resonance The height of the device is an integer multiple of λ / 4, which is ηλ / 4, where η is an integer. If the resonator is an open resonator, η is an even integer; if the resonator is a closed resonator, η is an odd integer. The function of coaxial lightning cable instead of resonator The resonator can be replaced by a standard coaxial cable. Fig. 16 shows an embodiment of the inventive probe tip, in which the probe tip uses a conventional coaxial cable instead of a resonator. An electromagnetic energy source 1 transmits electromagnetic energy to its cable. The coaxial cable has an outer protective component 52 that surrounds the insulator component 44 and the central conductive component 48. The central conductive component extends beyond the end of the coaxial cable, and a sharpened or finely-sharpened tip 60 is attached to it. At the end of the coaxial portion of the cable, a thin metal end. A barrier 46 is attached to the insulator, and the insulator is placed between the protective layer 52 and the center conductor 48. The thickness of the terminal barrier is governed by the same considerations of the conductive terminal barrier 16 at the end of the resonator. The end barrier 46 at the end of the coaxial cable has a hole of sufficient size to allow the center cable 48 to pass through the end barrier 46 so that the center probe can be electrically shorted to the end barrier. The invented probe includes a coaxial cable, and additionally has a direct coupler 11 between the end barrier 46 and the source 1. The direct coupler 43_couples electromagnetic waves from a source to the cable. The electromagnetic wave travels down the cable to the end and is reflected back by a barrier at the end. The interaction between the tip 54 of the probe and the sample being scanned modifies the characteristics of the reflected wave. The reflected wave is connected to a detector 50 by a direct coupler, and 18 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) -Equipment -------- Order ---------. Intellectual Property Cooperation of the Ministry of Economy Intellectual Property Bureau Staff Printing Du printed by the Central Standards of the Ministry of Economy 扃 Printed by Employee Consumer Cooperatives • A 7 B7 _ V. Invention Note (^) The size and phase of the reflected wave are measured by the detector. The quantitative characteristics of the physical properties of the sample, such as the composite conductivity, dielectric constant, tangent loss function, conductivity, and other electrical parameters are determined using equations designed in SEMM. Non-conducting or ferromagnetic material is measured by a number of Leiqi Yanghang quantitative measurements using a probe tip with protection, and a resonator that reduces or eliminates far-field wave components. Spatial resolution of nm and sensitivity of lx10_3. Furthermore, a quantitative measurement of the complex electrical impedance of a non-conductive material is performed using the analysis performance of the field distribution around the tip of a probe. Therefore, an image of electrical impedance number 建立 is established, which conforms to the resolution and sensitivity of the image, and the measured complex impedance 値 is related to the characteristics seen on the image. Referring again to Fig. 2, the coaxial resonator has a height of? / 4 in one embodiment. A sapphire disc 21 with a central hole is placed on the end plane, and its central hole is only slightly larger than the tip wire. The tip diameter is between about 50 μm and about 100 μm. A metal layer of approximately 1 μm is placed on the outer surface of the sapphire disc to protect the tip from far-field propagation waves. The thickness of the metal coating determined by the skin depth is to avoid the formation of micro-transmission lines, because the micro-transmission lines will have a large amount of loss near the hole. In one embodiment, a sapphire disc is used to reduce vibrations and is connected to the probe tip using an insulating adhesive. In addition, an insulating adhesive with low energy loss can be used to fix the tip wire to the end barrier protection layer so that the tip does not vibrate against the protection layer. In a different embodiment, the entire resonant cavity is filled with a non-transmitting ___ 19_____ scale applicable to China National Building Standard (CNS> Α4 specification (2l0 × 297 mm)): ~. (Please read the notes on the back first β write this page)

--- n I ---- clothing--I 1T —— ^ ---- A7 printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs ^.. _B7 V. Description of the invention ((g) Conductive material, such as SrTi03 According to the resonance wavelength inversely proportional to the square root of the relative dielectric constant of the material filled by the cavity, the height of the resonance cavity is greatly reduced in its example. Consider λ = (<:/; Γ) ε_1 / 2, For SrTi03 with f = lGHZ and ε = 300, λ is about 1.73cm, and the height of the resonator, λ / 4, is only about 0.43cm. The resonance diameter is also greatly reduced. As described in Application Serial No. 08 / 717,321, an image is obtained by placing the tip of the resonator on the sample to be imaged by physical direct contact, and scanning the tip across the surface of the sample. The resonator is on a The frequency is driven, and its frequency is slightly higher or lower than the resonance frequency of the resonator. The change in the measured resonance frequency is obtained by recording the output power below the input frequency (such as measuring the output voltage of the detector). When the tip scans the sample, the resonance frequency of the resonator decreases as much A function of the relative conductivity of different regions. Therefore, for example, a very fine niobium metal wire painted on it, such as silicon dioxide, can be resolved in a space of about 5 μηη (about λ / 100000). In the present invention, in addition to detecting the relative difference in the surface conductivity of the sample, a quantitative measurement of the electrical impedance can also be obtained. This is possible because of the resonance frequency fr and the quality factor. Q varies due to the dielectric constant and the loss tangent function of any material, such as samples placed near the tip of the probe. However, in the past, this interaction was not known enough from the measured or Q changes to obtain quantitative information about the dielectric constant, loss tangent function, or complex electrical reactance. The present invention includes a scanning evanescent wave resonance probe microscope with a calculation component that can be correctly stated in A series of sample surfaces ---- 20___ This paper size is applicable to China National Standard (CNS) 8-4 specifications (210.X29 *; mm) (Please read first Notes on the face β! Write this page) 11¾. The Book of Poetry Economy 'printed by the Central Consumers ’Cooperative Bureau of the Ministry of Consumers A7 .__; ___. — 87 _; _' V. Description of the invention (measured on the position of ip One of the series changes of fr and Q is the complex electrical impedance (such as dielectric constant, loss tangent function, or conductivity coefficient). Its calculation component is to calculate the ε and tangent loss (tan5) at a series of different frequencies by programming. The calculations were obtained from a mathematical model described entirely in a paper entitled "Quantitative Microwave Near-Field Microscopy with Non-Conducting Properties" to present a review of scientific instruments for the inventors.

Scientific Instruments), agree to make it public, and hereby incorporate it for reference 〇 The invented method of using the microscope probe tip is either to directly and securely touch the sample ’or to maintain a small gap between the probe tip and the sample. There are several steps for performing non-conductive sample measurements, described in detail below. In short, the way to measure the loss tangent function of a non-conductive sample and a sample includes, a) 'The reference resonance frequency fQ of the probe is determined by i) placing the probe far enough away from the sample material so that It is not affected by the sample; ii) scan a frequency range; iii) draw a frequency vs. power curve; iv) match a curve to know its maximum frequency, called f0; b) by dividing fQ by two The difference between the frequencies corresponding to the half-power amplitude points is determined; c) The coefficient M is calculated by the equation S = MQ〇2, where S is the power at f0; this paper size applies the Chinese National Standard (CNS) A4 specification (2 〖〇 × 297mm） (Please read the note on the back page first) Order A7 printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs. __________B7, '_; ___ " X. Invention Description (〆) d) Use Samples of known dielectric constant to calibrate the geometric factors A, B, and R in Equations 5 and 6. E) Place a probe tip of a scanning evanescent electromagnetic microscope close to the sample or touch the sample securely; f) The resonance frequency change caused by the approach of the sample near the measurement probe; g) The measurement probe Changes in the figure of merit due to the proximity of the sample; and h) the use of a pair of equations to calculate the dielectric constant and loss tangent function, the equations of which are from the equations 2 and 3 of the stable contact, the probe-sample gap equation 5 And 6 are selected from a group of equations or thin film equations. Alternatively, the frequency versus power curve in the above program can be determined using a Lorentz line pattern suitable for obtaining f0 and Q0. Stable contact measurement of non-conductive materials When using evanescent waves and a tip radius that is considerably smaller than the probe wavelength, electromagnetic waves can be considered semi-static, that is, the wave properties of the field can be ignored. In addition, it is reasonable to believe that the dielectric properties of the sample material near the tip of the microprobe are homogeneous and isotropic. Therefore, ε = ε '+] ε "and ε > > ε., And ε' >> ε", where ε is a complex dielectric constant, ε 'is a real number component of the dielectric constant, and ε "is a dielectric constant Imaginary number component, and ε〇 is the dielectric constant in free space. In addition, μ = μ '+ 〖μ ″ and μ ～ μ〇, where μ is the magnetic permeability of the sample and μ ′ is the magnetic permeability. The real number component, and μ ”is the magnetic permeability coefficient. ___22______ This paper is suitable for size ^ Chinese National Standard (CNS) Α4 size 7 2 丨 0 × 297 mm) (Please read the note on the back-f page)

Binding and ordering — A7 B7 V. Imaginary component of the description of the invention 'and μ〇 is the magnetic permeability in free space. Figure 3 shows a line graph of the measurement pattern. The probe tip 20 securely contacts the surface of a non-conductive material go, while the material 80 has a thickness considerably larger than the radius of the tip. It is best that the tip is five times thicker. For the initial arrangement, because the tip only extended a length of several steps smaller than the wavelength of the protruding cavity, 'the probe tip presents a conductive spheroid modified at the same potential' as in the barrier at the end of the resonator The end point or tip of a center conductor. The non-conductive sample under the tip is polarized by the electric field of the tip, so the electrical behavior at the tip causes the redistribution of the charge on the tip to maintain an equipotential on the surface of the conductive spheroid. The behavior on the tip is presented by an image charge qi 'located in the sample; the charge redistribution of the probe tip is presented by another image charge q2 located on the spherical tip. Repeat this behavior and redistribution yourself, in other words, 'Iteratively until equilibrium is achieved. As shown in Figure 3, three series of image point charges meeting the boundary conditions are formed on the tip and on the surface of the non-conductive sample. In the sample, the peak value of the field distribution can be expressed as a superposition effect established by the point charge qn ”series, and qn” is the effective value of qn in the sample. The expression of the field distribution is: 1 = —q ~ yV AiiitAZziX, a) where b = (s-sG) / (s + S ()) ′ qMnsoRoVo; r. Is the radius of the tip, and ^ and ez are unit vectors along the cylindrical coordinates r and z, respectively. Such a field distribution satisfies Coulomb's law and the conductivity of the probe tip. 23 This paper size applies the Chinese National Standard (CNS) Λ4 specification (210X297 cm).

Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (Please read the precautions on the back, -'0

A7 B7 V. Description of the invention (Boundary conditions on the surface of both the end point of the spheroid and the non-conductive sample. In this mode, most of the electromagnetic energy is in the cavity, and the field distribution in the cavity is not distributed. It is disturbed by the tip-sample interaction. Therefore, it is used in the perturbation theory of the electromagnetic resonance device, in which the frequency is slightly perturbed to know the resonance frequency, or how much the energy stored in the cavity is perturbed, which can be used to calculate [The offset from Q, which is due to a special non-conductive material, as indicated by equations (2) and (3). Μχ .._ »Η-,) φ AMy-b)乂 ^ | (^ 02 Λ-μ, Ηΐ) ^ '= 4--1 +1] (2) ⑶ (Please read the precautions on the back first

Order the China Bureau of the Ministry of Economic Affairs, Consumer Affairs Cooperation, and print out where E0, H0, Ei, and Hi refer to the electric and magnetic fields before and after the disturbance, respectively, and the wavelength is A = 4KS〇RQ (V «) 2 / Et ( ) tal) is a constant determined by the geometry of the tip-resonator combination (for a λ / 4 coaxial resonator Α ~ WRoli ^ R ^ / Ri) / ^), and tan5 = s' / s. V. Is the voltage at the probe tip. First consider the shift of the resonance frequency. Equation (2) shows that the shift of the resonance frequency is proportional to the radius R0 of the probe tip. This is because the electric field near the conductive spheroid is inversely proportional to the radius of the spheroid at a given voltage, and the sum contributed to the signal is the integral of the electric field divided by the sample volume and then squared. The spheroid is the modular approach to the probe tip. Now consider the shift of the quality factor Q. When the spherical probe tip is placed on 24 paper standards, the Chinese National Standard (CNS) A4 specification (210X 297 male splash) A7 B7 V. Description of the invention (>) When the resistivity-losing medium is near, a required applied current is used to assist in re-distributing the charge on the spherical probe tip. Q 値 's offset result table τρί is ~ Bτ (4) and the sum of Q 値 offsets is

(4) (Please read the note on the back page first) The taM is the loss tangent function. Using equations 2, 3, and 4, a quantitative measurement of the local composite dielectric constant of the sample can be obtained, the sample having a thickness that is considerably larger than the radius of the probe tip. The thickness of the sample can be at least twice the thickness of the radius of the probe tip. Preferably, the thickness of the sample is at least five times the thickness of the radius of the probe tip. More preferably, the thickness of the sample is at least ten times the thickness of the radius of the probe tip. The constants A and B are known by calibration of a standard sample, such as sapphire with a known dielectric constant and loss tangent function. Table I lists the relative dielectric constants 1 and loss tangent functions of some materials measured using the invented SEMM. The relative dielectric constant is related to the measurement in vacuum or air. The measurement is calibrated with a single sapphire crystal (ε produced 11.6 and tan5 = 2Xl0.5 sapphire below 10GHZ). These sapphires and the tadpoles described in the table were obtained from T. Konaka, et al. 'J. Supercond 4 283 (1991). The measured 値 is quite in line with 値 25 in the literature. This paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm)-* Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (& gt 4) A7 B7, the difference between 値 in the literature and practicality is that they are the average 値 of a large number of measurements. Table I. The measured dielectric constant of the single crystal and the tangent loss function ε! Tan5 measured tan5 YSZ 30.0 29 1.7 ΧΙΟ-3 1.75 XI O'3 LaGa03 23.3 25 1.5 ΧΙΟ'3 1.8 X10 · 3 CaNdA104 18.2 19.5 1.5X10-3 0.4-2.5 XI0'3 Ti02 86.8 85 3.9 X10'3 4X10'3 BaTiOs 295 300 0.47 0.47 YAIO3 16.8 16 8.2 SrLaA104 18.9 20 LaAL〇3 25.7 24 2.1X10 · 5 MgO 9.5 9.8 1.6 X10 · 5 LiNb03 (X- cut) 32.0 30 • i-— ^ ϋ n (Please read first (Notes on the reverse side are written on this page) It is sometimes better to order the air gap measurement of non-conductive material printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs without touching the probe tip directly to the sample. In such an example, the For the image charge shown in Figure 4, Get the relational formula of the iteration method: a '= \ + a' qn = tnq 1 ten &26; This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) ', -f--v, economy Printed by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry A7 B7 V. Description of the invention (〆) t where a '= g / R〇' and g is the gap distance between the sample and the probe tip. The initial condition of the iterative method is arw + a ^ l + g / Rdi;] tl = 1. Using a kind of perturbation method similar to the above, κ 丨 (5) Λ h α {+ α'Λ △ (Will), =-(5 + tan 今 丨⑹ Figure 5 shows the measured fr as a function of the gap distance for a magnesium oxide (MgO) single crystal (data points are shown in triangles). Figure 5 also shows the best curve using modular equation 5. For MgO In terms of Sr = 9.5, ΙΟ = 12.7μιη, and A = 1.71X10 · 3. Very good agreement between the measurement and the mathematical model used in the microscope of the present invention indicates that the semi-static and spheroidal tips provide approximately The correct measurement is made. It is important to use stable contact to evaluate the air gap effect of the measurement being made. For stable contact measurement a, 'a' is equal to g / R0 'near zero. For air gaps, .1 2η1, η: + — 3η-α and L Λ-/ Μ 2 t-— (1 -—ά) η η 3 27 _; _ This paper size applies Chinese National Standard (CNS ) Α4 specification (2 丨 〇 > < 297 mm> (Please read the precautions on the back of this page 舄 this page) HHV ii 'Order 5. Description of the invention (_ rules A ^. Fr -λΣ ΑΊ B7

b (2-b) W y (Λ + nz Af ·,-—T2-〆) *) e Yuan " 1 It refers to the frequency offset when Jianruian touches the sample steadily, which can be calculated by Equation 2. Equation 7 shows that even if the distance from the tip to the sample remains within 1 nm (for example, a '~ 10_2 for a 100 nm probe radius), since the second term of Equation 6 has a relatively small denominator (1 -b ~ 2ε〇 / ε), such an air gap effect cannot be ignored. For an & = 10, the difference is about 10%; for an ερ35, the difference is about 50%. Thin film quantity One application of the invented SEMM is to measure the dielectric constant of a thin film. It is important to note here that understanding the interaction of many traditionally considered films with the invented microscope is the same as a large sample, which can be done because the tip of the probe tip is sharpened. The penetration depth of the field is calculated using Equation 1 which will be approximately equal to the radius of the probe tip. The image charge module in question is useless. Typically, mathematical analysis, such as analysis of limited components, is necessary for such films. In any case, the contribution of the pedestal is modeled as a response on the tip, using a method of image charge to provide a good approach. Obviously, as the film thickness and dielectric constant increase, the contribution from the pedestal decreases. By using the following equation, a " yes (please read the notes on the back first

28 Applicable to Chinese National Standard (CNS) A4 specifications (2 丨 0X297 mm) as far as possible paper size. 5. Description of the invention (> 1) A7 B7 effect charge instead of the complex image charge induction effect to modularize this contribution. ΐ > 2〇 = (ε2-ε〇) / (ε2 + ε.), bioKsi-SoVh + s.), and ε2 and Si are the dielectric constants of the film and the pedestal respectively; a = d / RQ and d is The thickness of the thin film. In terms of choosing this kind of limitation theory, explain the limitation of infinite thinness and infinite thickness. The constant, 0.18, is determined by a series of corrections, and its value can be further refined. The present invention It is not limited to this particular 値 in the equation. Use a similar processing method as described above to obtain: y1 = ~ ΑΣ Σ KsKK [— ~ z ——--- jrn = lm = 〇LmtlCL / 7 + 1-(- 2 (/ 71 + 1) / 1 ^ Δ (^), = ^ {tan bn-lb ^ [— ~ 1 + 2mna n + \ + 2 (m + \) na] + (Please read the precautions on the back first ^^ Write this page) Factory installed. Order

(A 1ετεχ tan δλ y γ, Δ /. + ^) (^ 2 ^ Z ^ n + l + 2 (m + \) na ~ printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs where b2i = (S2-s 丨) / (ε2 + ει), tan52 and tai ^ are the tangent loss functions of the film and the pedestal. The above two equations can be called Thin Film Equations. Table Π shows the use of the invented SEMM and one at 1GHZ Tradition __29 _____ This paper size applies Chinese National Standard (CNS) A4 (21〇 > < 297mm) '' Central Standard of the Ministry of Economics 扃 Printed by Employee Consumer Cooperatives 5. Description of Invention (>) Cross Fingers The results of measuring the dielectric constant of the thin film by contacting the electrodes. Table Ⅱ Cross-finger electrode thin film measured by the dielectric constants and tangent SEM of various lotus films measured by SEMM and cross-finger lightning technology. εΡ tan5 ερ tan5 SrTi03 292 0.01 297 0.01 Ba〇.5Sr.5Ti〇3 888 0.19 868 0.10 Ba〇.7Sr〇.3Ti〇3 707 0.14 727 0.07 Essential spatial resolution For the microscope, Characterize an important advantage. Evaluate the nature of the microscope invented The resolution is: use Equation 2 to calculate the contribution to (Afr / fr) from a small longitudinal Coulomb, if there is a function about the lateral position (r) of the tip center of a different dielectric constant material. As r increases Its contribution obviously decreases rapidly, especially for large ε 値. The contribution from the internal volume of the radius reaches 50% of the total contribution, and its radius is defined as the essential spatial resolution. In its example, at a moderate 4 ~ 50) The resolution of the evaluation is about two levels smaller than the tip radius, and decreases slightly as εr increases. This is illustrated in Figure 7. Such behavior can be caused by considering a non-conductive sample that is polarized The effective detection charge on the probe tip is reduced to the sample to understand. The higher the dielectric constant, the shorter the effective distance between the charge and the sample. Therefore, with the polarization effect perpendicular to the sample surface, the distribution of the field inside the sample is concentrated In a very small area, and its area is just below the tip of the tip, and the offset from Q is subject to a _ 30 4 i degree ruler

I cm

Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs ..-. A7 B7

'.. r-. I V. Description of the invention (> ”This contribution is dominated by a small area. Experiments on non-conductive materials with a moderate dielectric constant have shown that the resolution of 100 nm can be measured in several It is realized by the tip radius of micrometer. The advantage of near-field microscope is characterized by the ratio of the internal wavelength of the sample to the spatial resolution. For this example, an advantage characteristic of about 4 × 105 is calculated as follows and measured by measurement. Verify ... X〇 = c / f = 30cm λ = λ〇ε · 1/2 = λ〇 / 50 * 1/2 = 30οιη / 7.1 = 4.2οηι The spatial resolution is 100mm, so the advantage is characterized by X / 100mm = 4.2cm / lCr5cm = 4.2X 10.5. Since the electromagnetic wavelength in the material is several (at least 4) levels smaller than the wavelength in free space, samples of electrically conductive materials are not suitable for such resolution analysis. Sensitivity The analysis of the resonance system can be analyzed using a block-type series resonance circuit as shown in Figure 2. The resonance circuit uses an effective capacitor C, inductance L and resistance R (for an ideal quarter-wave resonator and Language).

C "g / ln (Outline 31 (please read the notes on the back Θ to write this page) The size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0X297 mm) A7 A7 Qc __________ B7______ 5. Description of the invention u〇) where 1 «λ / 4 is the effective cavity length, Rs is the surface resistance of the cavity material, R2 and R are the radii of the center and outer conductor, respectively; ε〇 and μ〇 are the capacitance in free space, respectively Coefficient and permeability. The uncoupling (Qu) and coupling (Q.) quality factors of the resonance system are:

, CR rC R + RJp 'where R0 is the internal resistance of the source 値, c〇r = 2nfr = 1 // XC and fr is the resonance frequency, and pcx (h / l> CoSe is the coupling factor (h is equal to Effective coupling length, and Θ is the angle of the coupling loop and the radius). The power transmitted by the source, Po, the power transmitted into the cavity, P, and the energy stored in the cavity, E, is expressed as (Please read the caution page on the back first) 1 V = 1 (7) 2 ρ = τ (-) 2 +

Rjp'1 (R + R0 / p2) 2 P〇Qc PQ.i Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs CQ2c = -CV02 πε ^ λ 81n (Fin / Λ,)値 Voltage. When the signal S detected by the dipole detector is proportional to the square of the voltage of the coupling loop, at the resonance frequency we get: 32 This paper size applies the Chinese National Standard (CNS) Λ4 specification (210 × 297 mm) A 7 B7 V. Description of the invention (77 I) S = M Qc2-(7Α) where M is a constant and is determined by measuring Q 値 from a known material frequency response. At the same time, the output voltage of the phase detector can be expressed as: where 2 = 2 (^ (0) ()-0) ^) / 0 ^, Cog is the source's peripheral frequency * Vn is the noise voltage. Then the output power caused by δω = (ω ()-ο ^) is: p ^ Ps + P ^^ PQ2c (—) 2 ^ pn,

< ^ r I evaluates the sensitivity limited by Johnson noise, as shown in Figure 3, let us consider a well-equipped lossy network below the actual temperature T. The energy flowing to the left and right of the reference plane is equal due to thermal equilibrium: Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back to write this page)

k3TB / N + Pn = k3TB where N = QU / (QU-Qe) is the intervention loss, kB is the Bolzmann constant, and B is the data acquisition bandwidth. The final noise power is

Pn = kaTB ^ ~ ___J3_ This paper size applies to Chinese National Standards (CNS ") A4 specifications (21〇 × 297 mm) A7 B7 __; ____ ~ 5. Description of the invention (〆) Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The sensitivity limited by the Johnson Controls noise is determined by Ps = Pn: δε-L = 4 as PQ. When the maximum 値 Qe = (2/3) Q is reached (the optimal working condition, which can be achieved by adjusting the angle θ of the coupling 5 loop line), the 'minimum detectable (δε / ε) is evaluated as: _ _ί 一 _ Γ ~ ^ JBc ~ {τ) αώι ^ oKfrps.QjniRJR ^ where C is the speed of light in free space. Assuming the vacuum breakdown voltage between the protective coating and the tip wire is VQ = 10V (for an i0mm gap between the tip wire and the protective coating), the estimated sensitivity is approximately 1 X 1 ·· 5 or so 'fr = 1GHZ' T = 300K 'B = 100kHz' Qu = 1700 and R2 / Ri = 5. To obtain such sensitivity, a microwave source with a frequency stability of df / f = lX10 · 8 is required. An analog voltage-controlled oscillator (VCO) used in the system. The stability (10_6) limits the sensitivity to IX 10 · 3. The above equation shows that the sensitivity increases linearly with the tip radius Rg. When the resolution shown in the above increases linearly with the tip radius, from a practical point of view, the conflict between resolution and sensitivity has reached the best and reasonable compromise. Quantitative measurement of the lightning conductivity coefficient of a sample of electrical conductive parts ___________34__ This paper wave scale is applicable to China National Standard (CNS) A4 specification (210X 297 mm)

[JbTB (Please read the notes on the back first

(r page) Order A7 B7 printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. Description of the Invention (0) To point out the concept of classical skin depth of conductive materials (still commonly used in evanescent wave microscopy) to describe evanescent electromagnetic waves. Interaction with conductive materials is no longer valid. The concept of classical skin depth is derived from the interaction between a conductive surface and a propagating plane wave, where the k-vector component (kr, kz) of the propagating plane wave must be less than kQ. When ke »k〇, there is a slight gap between the refracted waves inside conductive materials of different kz, and all physical parameters can be calculated with a uniquely evaluated keko. On the other hand, the k-vector component (kr, kz) of the evanescent surface wave, which is included in the interaction between the evanescent wave and the sample, is multi-evaluated and can be higher than k0. All physical parameters must be calculated for each different k-vector component, and all physical parameters must be integrated. We propose here a detailed calculation of the field structure using conductive materials and the interaction of evanescent electromagnetic waves. It should give a wide range of capabilities for the quantitative application of quantitative evanescent electromagnetic wave microscopy. As long as the wavelength is too large and the size of the interaction region, in principle, the results are suitable for evanescent wave microscopy with frequencies rising to infrared. In addition, since the electric field structure considered here is exactly the same as the electrostatic field structure of various scanning probe microscopes, it should also be able to give a wide range of capabilities to the quantitative microscope using a scanning probe microscope. A microwave coaxial resonator with a high quality factor (Q) has a sharpened metal tip placed on the center conductor. Its tip extends through a hole formed in the thin metal protective tip barrier of the resonator. In view of the fact that the non-propagating evanescent wave is generated at the tip, the design of the tip and the protective layer structure is to make the far-field component of the transmission be 35 paper standards applicable to the Chinese National Standard (CNS) A4 specification (2 丨 〇297mm) (please first Read the notes on the back ^: Write this page) —. Batch III βτ manuscripts, · ιτο Department of Economic Cooperation, Central Bureau of quasi Bureau employee consumption cooperation print: A7 ____ B7________ V. Description of invention " Ψ) The barrier is empty Cavity. This feature is extremely difficult for high-resolution and quantitative analysis. Modular evanescent waves and propagating waves are not mathematically feasible (the latter is leaked from the resonator). Without the invented microscope structure, quantitative microscopy cannot be performed. Compared with the traditional antenna probe (a far-field concept), the probe invented does not emit significant energy (thus providing a very high Q 値 to improve sensitivity) ° Only when the tip is close to the sample, the transient on the tip The evanescent wave interacts with the material. Their interactions cause changes in the frequency and Q 値 of the cavity, resulting in a microscopic examination of electrical impedance. In short, the measurement of the conductivity of an electrically conductive sample involves the following steps: a) Determine a reference resonance frequency f of the probe: i) Place the probe far enough away from the sample material so that it is not affected by the sample Impact; ϋ) scanning a frequency range;

Hi) Draw a frequency vs. power curve; iv) Match a curve to get its maximum frequency, called f0; b) Determine by dividing f0 by the frequency difference 値 corresponding to the half power amplitude point Q〇; c) Calculate the coefficient M ′ by the equation S = MQ〇2, where S is the power at f0; d) Place a probe tip of a scanning evanescent electromagnetic microscope near the sample; e) borrow It is calibrated by measuring and cooperating with the frequency and figure of merit in the equation _________36 ______ Paper size is applicable to China National Standard (CNS) Α4 size (21〇 × 297297t) (Please read the precautions on the back page) Printed by the Consumer Bureau of Standards Bureau. A7 B7__ V. Description of the invention U <) The geometric factors A, B, and R0 in Equations 12 and 19, the frequency and figure of merit are the probe tip and reference samples of known conductivity coefficients Gap distance, a function of g '; f) the change in resonance frequency caused by the approach of the sample near the measuring probe; g) calculate g from Equation 12; h) the approach of the sample due to the approach of the sample The resulting change in figure of merit; and i) Equation 19 is used to calculate the conductivity. When a conductive material is placed near the tip (modulated as a spheroid), it will interact with the tip and cause a redistribution of charge and field. First, the field can be redistributed by treating the material as an ideal conductor with infinite conductivity. According to the semi-static approach (the wavelength is greater than the effective area of the field segment), the surface of the conductive material is a charge mirror, and the tip-sample interaction can be expressed as a multiple image charge process, as shown in Figure 8. Show. The electric field in the tip-sample area can be calculated as the superposition of all charge distributions: (Please read the precautions on the back first

Order • 30 3 ___ ㈣ 1 [/ · 2 + (ζ + α ,, ^) 2] ^ [r1 KHz-anR,) et and the surface electromagnetic field of the conductive material is: aSn 37 The paper wave scale is applicable to Chinese national standards ( CNS) Λ4 size (210X297 mm⑻ (9)

V. Description of the invention (3R〇y W (-2πε〇Μ〇 ”= 1 = 1 [factory 2+ (£ 7 in) 2 production 1 / < ^ (10) where ε〇 and μ〇 are the permittivity in free space And magnetic permeability coefficient 'R〇 is the tip radius, ^ and e / are the unit vectors in the cylindrical coordinates r and z directions, and & 11 ^ and qn are the charge and position of the nth image inside the tip, respectively. 1 +, 1 + flo (11) (Please read the notes on the back first

1 + α〇 + α, 'this page) Printed by the Consumer Cooperatives of the Central Standards Bureau, Ministry of Economic Affairs Initial conditions are ai1 + a〇 and q = 47 ^ GRGV () ′ h is the tip-sample distance, and Vo is the tip voltage. Since Equation 8 satisfies Coulomb's law and boundary martingale conditions, it is therefore the correct and unique solution to this problem. Although we deal with electromagnetic waves here (the E, α ηλ field conforms to Maxwell's equation), the electric field structure solved here is the same as that of various SPM's. The typical field intensity profile obtained from Equation 10 (Figure 9) forms a volcanic appearance. The distribution of the 'radius for different tip-sample distances is described in FIG. The figures indicate that the size of the caster (a measure of the spatial resolution of the microscope) decreases, and the intensity of the field increases with decreasing tip-sample distance. We analyze the system via the equivalent series RLC circuit of a resonator. The tip is represented as a capacitor, C ', whose capacitance is determined by the tip-sample interaction and is connected in parallel to the main capacitor of the resonant circuit. The relative resonance frequency shift is proportional to the change in C '. This change can also be expressed by the 38 paper sizes on the tip that are applicable to the Chinese National Standard (CNS) A4 specifications (210X297 mm) A7 ______, B7-... V. Description of the invention The change in the total charge of U / p can be used to express this change, ie It is the sum of the induced (imaging) charges of all samples: (Please read the precautions on the back first "(12)

'I --- Order if satisfying the condition of good metal is σ »ωε, this result is common to all conductive materials (not subject to conductivity coefficient), where σ and ε are the conductivity coefficient and dielectric of the conductive material, respectively The electric constant, and ω is the circumferential frequency of the microwave (that is, the σ / ωε of Cu at 1GHZ is a level of 109). Figure 11 shows the measured f for Cu as a function of tip-sample distance and the best curve according to Equation 12. The best curve determines A = 2.82X10 · 3 and Ι1 * 8μm (which is consistent with the observation). In order to calculate the energy dissipated inside the conductive material, the second step must consider the approaching effect, and then the refraction of ephemeral electromagnetic waves on the surface of the conductive material, as well as the attenuation behavior inside the material. In the next section, we ’ll first discuss the refraction of evanescent electromagnetic waves on the surface of conductive materials. Then, calculate the attenuation of the wave and the internal dissipation of the conductive material to verify the conductive coefficient obtained from the quantitative measurement of the SEMM signal. The type is: + klu: ζ < 0 (in air)-10 (in conductive material) (13) 39__ (CNS) A4Mi ^ T21〇x 297 ^^^ ~~~~~~-A7 __________ B7 ______ 5. Description of the invention (p) where U is an arbitrary component of electromagnetic waves, and kQ and dagger are (complex) characteristic fluctuation vectors of air and conductive materials, respectively. 1 ^ 2 = ω2εμ (1 + ίσ / ωε) and ′ where μ is the magnetic permeability coefficient of the conductive material. In the range of microwave frequency clOGHzdk ^ / k ^ lMO), even for lightly doped semiconductors (e.g., Si with a dopant level of 10 and a resistivity of 3Qcm), it is still ke2. 2. Due to boundary conditions, when a wave is incident on the surface of a conductive material from the air (either propagating or ephemeral), the lateral component of the wave vector is continuously orthogonal to the contact surface, ie ηΛ is a unit vector perpendicular to the contact surface, and k / represents a refractive wave vector of k0A. When the incident wave is a propagating wave, the vertical component of its wave vector in the air, kOZ (= k0C0S0, where 0 is the angle of incidence), is a real number, and its transverse component, ko ^^ aJ-kJ ^ kosiiie), limited to 値 less than k. Therefore, since k〇r # I ke | is negligible, the internal refraction wave vector of the conductive material of a propagating wave is almost always perpendicular to its surface, that is, kQz =, (kc2-kQr2) Eke. Therefore, the attenuation length is independent of the angle of incidence. From this point of view, it is generally stated that at a frequency that is independent of the angle of incidence (ie, the transverse component of the wave vector), the conductive material has a unique surface impedance 値 (or surface resistance 値), where the angle of incidence is It is the angle of incidence of incident electromagnetic waves in the microwave field. It is based on the fact that the traditional concept of skin depth has been verified. In any case, the situation is completely different from evanescent waves. In this case, the corresponding value can be any 是 equivalent to or even greater than | ke |, and it is no longer ignored. Therefore, the length of the attenuation is determined by k〇r, and must be applied to each of the --- 40_ This paper size applies the Chinese national standard (€) 8 4 specifications (210 '_ > < 297 mm) (Please read first Notes on the back

Order printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. A7 ___ B7 __ V. Description of Invention (V?) The concept of the classical skin depth is no longer valid. Regardless of this fact, any theory of evanescent wave microscopy of conductive materials is flawed. In order to further describe the above analysis in detail, we use the concept of spatial frequency like Fourier optics to expand the surface field Hs (r) into individual lateral components: 昃 & anti⑺exp (maru (14) tip · sample distance The spatial frequency spectrum calculated for different ratios of the tip radius (aQ) is shown in Figure 13. For a certain R0 and aQ, there is obviously a cut-off frequency. It is also clear from the figure that the tip-sample distance The smaller (ie, the smaller the aQ / RQ), the stronger the high spatial frequency. It can also be found in Fig. 13 that the intensity increases so that in the kQr range where the spectrum is high, the decrease of a. In the kGr range, it is relatively slow. In other words, the increase in field strength with decreasing tip-sample distance is mainly concentrated in the high spatial frequency region. The corresponding vertical wave vector component inside the conductive material can be obtained:

Vi-kl =-k'r = kX (15) where 1 ^. 2 and k, the real and imaginary parts representing kez'δ2 = 2σ / (ωμε) is the classical skin depth of metals and semiconductors, or the penetration depth of superconductors. The corresponding electromagnetic field inside the conductive material has a type of _____41___ .. This paper size applies to the Chinese National Standard (CNS) Α4 specification (210X297 mm) (Please read the precautions on the back first ^^ write this page) Write too

, tT-like Α7 Β7 V. Description of the invention (ffc (kQr) = + k0rr) ~ Jc '^ z] (16) ^ AKr) = V x Hc {k0r) / (a-ίωε) (17) Please read first The total power flowing in and out of the back and conductive material can be verified as the intention Jη · Sdkl = IJ Re {^. Χ H'c)} dkl (18) where SA = (l / 2) Re {EAxHA, Poynting vector. The Q 値 shift caused by power dissipation in a conductive material is: Δα (19) Write this page and print it from the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs where B is a constant, which can be the same as Α 値 in Equation 12 Obtained by mode correction. If k0z «l / 3, the above method produces the same results as the classical skin depth method. In any case, if kGr ~ l / δ or k〇r < l / 5, the change of situation will be dramatic. This is illustrated clearly in Figures 13 and 14. Also shown in Fig. 13 are the Q-distance curve measured for Cu and the curve most suitable for using Equation 19. The best fit curve provides the conductivity coefficients of B = 1.52xl0_7 and 6.2xl07S / m (based on the traditional δ «2μιη set 42. The paper size is applicable to China National Standards (CNS) Α4 specifications (2 丨 0 X 297 mm> Economy) Printed by A7 of the Central Bureau of Standards of the Ministry of Labor Cooperatives _ _ B7 V. Description of the Invention (Characteristics of Skin Depth), which is in good agreement with the conductivity of Cu (5.8xl07s / m). A classical set will be used. The best fit curves of skin depth concept are drawn together. The difference is quite large in the small tip-sample distance area. Other electrical parameter quantities using the invented SEMM can be quantitatively measured using the invented SEMM Other electrical parameters, such as capacitance and Coulomb force. The electric field structure solved here is exactly the same as the electrostatic field structure in various SPM's, including SPM's such as scanning capacitance microscope detection. For conductive and non-conductive samples For example, the full expression of the capacitance between the tip and the sample is written as: guang /-n9 [V〇 For conductive materials, when the distance is less than one-tenth of the tip radius, we find that Amount capable of expressing fairly well with the following equation C / = -1.26x70 ^ 0 ^ log ^ .Lll ^ Mo UFarad Coulomb force between the tip and sample) as follows:

Ridge% 2) RF = -'dh =-^^ 〇'il ^ {Newt〇n) These relationships can be used to obtain a variety of SPM, s quantitative microscope detection 〇 _______43 scales applicable to Chinese national standards (CNS> A4 specifications (210X29 ^^-*-„-------- (Please read the notes on the back @write this page first)-Order 'Consumer Cooperation with Employees of the China Prospective Bureau of the Ministry of Economic Affairs and print A7 B7 _. 5. Explanation of the invention (^ >) A distance rule for SEMM The rapid progress of the electronics / optical industry requires the ability to image electrical characteristics at high resolution. We have developed a scanning evanescent wave microscope (SEMM), It can quantitatively measure electrical characteristics and surface resistance with a resolution below micron. We measure the dielectric characteristics of a sample by monitoring the resonant frequency (fr) and quality factor (Q) of a coaxial cavity. The offset corresponds to the dielectric constant of the material (ε), while the offset of Q corresponds to the tangent loss function (tan5). By modularizing the tip into a single pole, and by calculating a series of image charges, we Evaluate local ε and tan5. Since the tip radius determines the range of the field distribution, this Microscopes can have a resolution below micron. For the quantitative characterization of Ke material, it is useful for operation at a known distance. We have operated in a stable contact mode, but this kind of Mode reduces resolution, and stable contact can even damage the tip and sample. Here we describe some different ways to adjust the tip-sample separation and allow non-contact quantitative measurement of high-resolution metal and insulating surfaces The quantitative modularization of the SEMM response has been performed in the case of metals and insulators. The resulting curve has been theoretically appropriate (Figure 11). For the case of good metals, the & resulting offset does not It is determined by the surface resistance 然而. However, the shift of 'Q is a function of the surface resistance 。. Since the frequency shift does not change with the conductivity, it can sense a fixed value by maintaining the degree of separation. Frequency offset to control the degree of tip-sample separation. Through such methods, the local anatomy of the surface can be The quality of the metal is _44_ The paper size applies the Chinese National Standard (CNS) Α · 4 specification (210X 297 mm) (please read the precautions on the back first ^^ write this page) ) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. A7 B7 ____ V. Description of the Invention (4) The conductivity can be imaged at the same time. Metal: For the example of metal, when the frequency offset must be a constant, We can maintain a fixed tip-sample separation by adjusting the tip-sample separation to maintain a fixed frequency fr in the cavity. The ability to perform surface resistive contactless imaging develops a variety of possible applications. One of the interesting aspects of microwave clustering is high τ. The outline of the thin film development results. A quantitative analysis module for non-conductive and metallic tip reactions has been developed. Since SEMM operates in extreme near-field regions with a resolution of approximately λ / 106, we can use a semi-static approach. Local electrical characteristics are achieved by turning the modular tip into a metal sphere. And are evaluated by calculating a series of image charges. Quantification of SEMM reactions Modularization is performed in examples of metals and insulators. Quantitative comparisons of tip response and modular response have been shown as a function of distance and sample characteristics' and have demonstrated accuracy within 5% on samples with widely varying non-conductive and metallic characteristics. For metals, the result is expressed as

Af / f = -AIqn / V〇 > where the sum is from n = 2 to infinity 'and A is a geometric shape factor. qjlj is generated by an iterative relationship: qn = qn-i / (l + a〇 + an.i); and an = l + a〇- [l / (l + a〇 + an.i)] With initial conditions: ael + a. And q 丨 = 4tcS () R〇V (), where a〇 = g / R〇 is _____45___ This paper size is applicable to China National Standard (CNS) A4 size (mm) (Please read the precautions on the back first β write (This page) · *% · Write · Order printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. A7 _ ^ ______; __B7_____ V. Description of the Invention (#) Tip-The degree of sample separation, R0 is the tip radius, and vQ is Tip voltage. For ao < l, this expression slowly converges due to the slow divergence of the image charge from the tip. In any case, the expression Af / f = -1.14Alogi〇 (a〇) is quite suitable for a〇 < 0.1. Since these expressions are not related to the conductivity of good metals, the frequency offset is used as a measurement of distance, and its surface resistance is measured separately. By changing the degree of tip-sample separation above a metal base, the frequency response can be measured. After the cavity calibration used to determine the geometric constant A, the theoretical curve can be matched, and the degree of complete separation can be derived below a given fr. (Figure 17) The design of our microscope is based on a previously constructed SEMM. It can be seen from the calibration curve that a frequency fRF is selected to correspond to the degree of tip-sample separation. To adjust the tip-sample distance 'we use a phase-locked loop in which the contact 31 in Fig. 2 is open. A fixed RF frequency fRF is input into the cavity, and the output of the cavity is mixed with a signal from the reference path. When & reaches fRF, adjust the length of the reference path so that the output of the mixer is zero. The output of the phase detector is supplied to an integrator, which adjusts the tip-sample distance by changing the extension of a piezoelectric actuator (Burleigh PZS-050) to keep the output of the integrator close to zero. For samples showing uniform frequency offset, this corresponds to the degree of separation of the fixed tip and sample. The vibration of the actuator and the relatively low resonance frequency limit its measurement to approximately 30 Hz. Measure Q 値 and simultaneously measure the size of the cavity resonance. Use the calibration curve ___ 46 ------- This paper size applies the Chinese National Standard (CNS) A4 specification (21〇 > < 297 public holiday), (Please read the precautions on the back page first) Order A7 Β7 V. Description of the invention (i). (Fr vs. d) 'Resonance frequencies corresponding to some selected tip-sample separation degrees are selected for use in the cavity. The selected resonance frequency is supplied to the cavity, and the output of the phase detector is used to adjust the supplied voltage to the piezoelectric actuator. The anatomy of the sample was measured by monitoring the vibration of the voltage supplied to the piezoelectric actuator. To demonstrate the ability to separate local anatomy and electrical information, we imaged a set of metal squares with varying heights on a thin metal film (Figure 18). This sample _ was composed of 100 nm, 200 nm, and 400 nm Ag squares placed on a 2.1 μm Ag base, and the Ag base was set on a sapphire base. They are 250 μm one by one and separated by a distance of 60 μm. Partial solution The cross-section image shows the meticulous changes in the height of different squares. The loss image must be uncharacterized β. In order to demonstrate the ability of surface resistivity imaging, we will image a square with a changed resistivity (Figure 19). This sample consists of Mn, Cr, and Zr squares set on Pt at 75nm, and Pt is set on a silicon substrate. The change in the anatomy image corresponds to the height measured by the profilometer. 5 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs ^ J " 丨 (Please read the precautions on the back page). The loss image is clearly visible and corresponds to the change in resistivity. Polarized single crystal: For materials with constant frequency offset (ie, polarized single crystal), the tip-sample distance (d) can be controlled by adjusting its distance to maintain a fixed frequency offset. We have used a phase-sensitive detector to perform a negative feedback loop to force a piezo-actuator (Rayleigh PZS-050) to maintain a fixed fr. For samples showing a uniform frequency offset, this corresponds to a fixed tip-sample separation degree. Local anatomy of the sample ___________ 47 The paper is compliant with the Chinese National Standard (CNS) A4 (210X29 * 7 mm): A7 _ B7 ___ V. Description of the invention (Park) The picture is supplied to the actuator through monitoring The change in voltage is measured. Peer measurement of an additional signal enables imaging of changes in sample characteristics by linking the local anatomy. The change in power delivered corresponds to a change in tangent loss function or surface resistance. By applying an alternating voltage with a frequency between the frequency of the tip-sample negative feedback loop and the bandwidth of the cavity; and by measuring the change in the output of the phase detector, it is also possible to measure. First The dielectric constant (sUk) of each level. (Figure 15) This image was measured with a periodically polarized single crystal LiNb03 wafer. Except for a fixed tilt, the topographic image must be uncharacteristic. With the reversal of polarization in the AC field, nonlinear images are characterized by reversal in phase. Others: The reflection mode near-field optical microscope inspection without holes (NSOM without holes) can also be used for the distance adjustment of a SEMM. The change in material properties at optical frequencies is less than at lower frequencies, making the NSOM without holes suitable for distance adjustment. 'Traditional' near-field optics rely on the geometry of a transmitting or absorbing tapered waveguide. This type of waveguide can either limit or sample light from near a hole, and the size of the hole is smaller than the wavelength of the light. This form of near-field optics requires the assembly of a complex probe. In a holeless NSOM, a sharp, optically conductive tip is placed near the sample and a highly focused spotlight illuminates the tip-sample area. This is in contrast to earlier holeless NSOMs, which illuminated their tips from the bottom. Limit these hole-free NSOMs to optically transmitted samples. Either by size measurement or by measurement of the polarization of scattered light, the scattered light can be used as the degree of tip-sample separation changes --------- 48__ This paper is applicable to S countries Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back first

, 1J-P-0J Printed by the Consumer Co-operation of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7: # ι £ {-I 补 T 本 ~ 〇 月 " £ V. Description of Invention (q)

For distance control. To reduce the effect of background brightness, we propose the use of Schwartzchild lenses, which have a dark center region to reduce the background of scattering. In addition, a longitudinal high-frequency vibration can be used to reduce far-field background effects. This high-frequency vibration should only detect the components of the optical signal, and its optical signal changes over a small length scale. This method considers the control of the tip-sample separation of a high-resolution SEMM. The high-resolution of the SEMM extends across a wide range of Z-tip-sample distances of the base combined with the electrical characteristics of the sample. The offset difference is measured to adjust. The location of a vibrating sample, such as placing a piezoelectric component under the sample, will cause the resonant frequency and its harmonics to change. These changes are measured using, for example, self-holding amplifiers. Changes in the resonance frequency will have a sharper distance dependency than the microscope signal and can be used for distance control. For a frequency offset from a slave similar to a power law, a change in f; at the frequency of the cavity's high-frequency vibrations will reversely change the other tip-sample separation factor. It is allowed to measure the sample characteristics and local anatomy at the same time. If the longitudinal high-frequency vibration is smaller than the tip-sample separation degree, the total change of the obtained signal will be small. Frequency offset and harmonic intensity are independent of the dielectric constant and tip-sample distance g, but two independent equations are derived: 引 e, g) (2〇) Qiu Shang = f2 (e, g) dS U (21) 49 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) Loading ·! ------ Order ------- -Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

5. Description of the invention (Hi) where f ,. is described in the previous equation 5. Bring equation 5 into equation 20, Af = fr-f0. In addition, the denominator f | in Equation 5 is replaced by the heart. Due to the relative size of the number, its result will have a non-negligible effect. Equation 5 solves fV and uses it as Equation 20. Equation 21 is a derivative of g. Equations 20 and 21 are solved at the same time to obtain the dielectric constant, ε, and the gap distance 'g. The description of the exemplifying embodiments and the best mode of the invention are not intended to limit the scope of the invention. Various modifications, structures, and equivalent devices can be used without departing from the true spirit and scope of the attached patent application. [Element Symbol] (Please read the precautions on the back before filling this page) Μ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 10 Microwave cavity 1 2 Loop line input 14 Loop line output 16 Terminal barrier 17 Protective component 18 Center metal conductor 19 Sharpened tip 20 Sharpened metal tip 2 1 Sapphire disc 2 2 Hole 3 0 Generator 3 1 Contact 50 ---- Order ---------------- ------ -— ^ -nn-This paper size applies to China National Standard (CNS) A4 (210x297 mm) A7 B7

丨 Correction 丨 Supplement I This year, the fifth invention description Coaxial wiring 3 4 Diode 4 0 Detector 4 2 Direct coupler 4 3 Direct coupler 4 4 Insulator assembly 4 6 Metal terminal barrier 4 8 Center conductor 5 0 Data acquisition Unit 5 2 External protective component 5 4 'Probe tip 6 0 Computer 7 0 Image display 8 0 Sample 9 0 Stepping mechanism 10 0 Controller (Please read the precautions on the back before filling this page) -Order i ------- f.rl > / Γ. '· Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 51 This paper size applies to China National Standard (CNS) A4 (2) 0 x 297 mm )

Claims (1)

A8 B8 C8 D8 Consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs of the People's Republic of China, printed and applied for patent scope. 丨 Modified a probe for a scanning electromagnetic microscope, including: | Supplement a) a coaxial cable with a central conductive component; b) — an insulating material surrounding the central conductive component; c) an external electrical conductive protection component surrounding the insulating material; d) — an end barrier with a hole, the end barrier is connected to the protection component; .e) A .. It is electrically connected to the worm. The cardiac conductive component _. Sharpened _ tip. _, Its central conductive component is arranged to extend through and protrude through the hole of the terminal barrier. For example, the probe of the scope of patent application, the probe includes a linear coaxial cable. 3.—A kind of scanning electromagnetic wave. The probe of the microscope includes: a) ~~ resonators with a central conductive component; b) — a cavity surrounding the central conductive component; c) — an external Electrically conductive protection group 侔, surrounding the cavity; d) an end barrier with a hole, the end barrier is connected to the protection component; and e) a sharpened tip electrically connected to the central conductive component, The central conductive component is arranged in such a way as to extend through and protrude through the hole of the last barrier. 4, 4 If the probe in the scope of patent application No. 3, further ® includes a second electrically conductive front end barrier, the front end is set at a distance above the end barrier, and the distance between them is between L / 丄Between 1 and 1/4 .λ an integer n times. Good paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) ^^ iiitr --------- line. A8 B8 C8 D8 6. Consumption cooperation between employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, Du printed, and patent application scope. 丨 Modified a probe of a scanning electromagnetic wave microscope, including: | Supplement a)-a coaxial cable with a central conductive component; b)-surround The insulating material of the central conductive component; c) an external electrical conductive protection component surrounding the insulating material; d) an end barrier with a hole, the end barrier is connected to the protection component; .e)-one .. Electrically connected to the worm. Heart conductive component _. Sharpened _ Tip. _, Its central conductive component is arranged to extend through and protrude through the hole in the terminal barrier. For example, the probe of the scope of patent application, the probe includes a linear coaxial cable. 3.—A kind of scanning electromagnetic wave. The probe of the microscope includes: a) ~~ resonators with a central conductive component; b) — a cavity surrounding the central conductive component; c) — an external Electrically conductive protection group 侔, surrounding the cavity; d) an end barrier with a hole, the end barrier is connected to the protection component; and e) a sharpened tip electrically connected to the central conductive component, The central conductive component is arranged in such a way as to extend through and protrude through the hole of the last barrier. 4, 4 If the probe in the scope of patent application No. 3, further ® includes a second electrically conductive front end barrier, the front end is set at a distance above the end barrier, and the distance between them is between L / 丄Between 1 and 1/4 .λ an integer n times. Good paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the notes on the back before filling this page) ^^ iiitr --------- line. Intellectual Property of the Ministry of Economic Affairs A8 B8 C8 D8 printed by the Bureau ’s Consumer Cooperatives 6. Application scope of patents_5. If the probe in the scope of patent application No. 4 is applied, the electrical front end barrier is electrically short-circuited to the center conductor, and the front end of the J chapter wall and the end barrier The distance is η (1/4 λ), where .n is an odd integer. 6. For example, the probe in item 4 of the spread range, in which the front end barrier is not short-circuited to the center, the conductor, and-is η (1/4 λ), where η is an even integer. 7. The ancestral staff please specialize in the probe of the scope 4 in which the protective component is appropriately fixed to the center conductor with an adhesive. 8. The probe as claimed in claim 3, wherein the cavity contains an insulating material. 9. A scanning electromagnetic wave microscope comprising: a) a scanning electromagnetic wave microscope having a hole and a central conductive component. A mirror probe having a hole provided on an electrically conductive terminal barrier, and the center conductive The component includes a sharpened tip that extends past and highlights the end barrier, b) a frequency detector that calculates the initial and final resonance frequencies of a resonator called a frequency offset; and c) a power detector The detector is used to calculate the initial and final ratios of the consumption called Q offset and the electromagnetic energy stored in the resonator. 10. For the microscope of item 9 of the application scope, it further includes a computer tool for calculating the dielectric constant of a non-conductive material. The non-conductive material is placed near the tip of the electrode probe. The constant is a function of the shift of the resonance frequency or the change of the reflected wave, and the reflected wave is caused by the non-conductive material approaching the probe tip. _ 2 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm): '' (Please read the note on the back? Matters before filling out this page) • nnn 1 fli ^ ii Order ----- ^ ---- Printed by A8, B8, C8, D8, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs VI. Patent application scope_5. If the probe in the patent application item 4 is applied, its electrical front end barrier is electrically shorted to the center conductor, And the distance between the front J chapter wall and the end barrier is η (1/4 λ), where .n is an odd integer. 6. For example, the probe in item 4 of the spread range, in which the front end barrier is not short-circuited to the center, the conductor, and-is η (1/4 λ), where η is an even integer. 7. The ancestral staff please specialize in the probe of the scope 4 in which the protective component is appropriately fixed to the center conductor with an adhesive. 8. The probe as claimed in claim 3, wherein the cavity contains an insulating material. 9. A scanning electromagnetic wave microscope comprising: a) a scanning electromagnetic wave microscope having a hole and a central conductive component. A mirror probe having a hole provided on an electrically conductive terminal barrier, and the center conductive The component includes a sharpened tip that extends past and highlights the end barrier, b) a frequency detector that calculates the initial and final resonance frequencies of a resonator called a frequency offset; and c) a power detector The detector is used to calculate the initial and final ratios of the consumption called Q offset and the electromagnetic energy stored in the resonator. 10. For the microscope of item 9 of the application scope, it further includes a computer tool for calculating the dielectric constant of a non-conductive material. The non-conductive material is placed near the tip of the electrode probe. The constant is a function of the shift of the resonance frequency or the change of the reflected wave, and the reflected wave is caused by the non-conductive material approaching the probe tip. _ 2 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm): '' (Please read the note on the back? Matters before filling out this page) • nnn 1 fli ^ ii Order ----- ^ ---- Printed by A8, B8, C8, D8, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs VI. Scope of patent application, 1, 1. 11. If the scope of the scope of patent application is 10, its application is brain-envy. Let's calculate its dielectric constant from Equation 2. ： 12_ If the microscope in item 9 of the patent application scope 'further contains a computer tool for calculating the loss tangent function of a non-conductive material' its non-conductive material is placed near the tip of the electrode probe ' The electric constant is a function of Q 値 's offset and Q Wei's i translation is caused by compliance. The conductive material is close to the probe tip. 13. For the microscope of the scope of application for patent No. 12, in which the brain tool is programmed to calculate the loss tangent function of benzene from Equation 3. 14. The microscope of item 9 in the scope of patent application, wherein the power detector '.... is a diode detector. 15. The microscope according to item 9 of the scope of patent application, wherein the frequency detector includes a phase shifter, a phase detector, and an integrator. 16. The microscope of item 9. in the patent application, wherein the probe has a resonator and the cavity is filled with a non-conductive material. Π. The microscope of item 16 in the scope of patent application, wherein the non-conductive material is sapphire. 18. For the microscope with the scope of patent application No..17, the non-conductive material is SrTi03. 19. For the microscope of item 9 of the scope of patent application, in which the probe tip extends a certain distance from the hole, the distance is between about 1/3 and 3 times the distance through the hole. .20. As for the microscope in the 9th scope of the patent application, the hole in the barrier at the end of the φ resonator is circular, and its diameter is about 1 / 20th of a millimeter. ) A4 size (210 X 297 public love) ---------------------- Order --------- line (Please read the note on the back first Please fill in this page again) Printed by A8, B8, C8, D8, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Scope of patent application, 1, 1 Let's calculate its dielectric constant from Equation 2. ： 12_ If the microscope in item 9 of the patent application scope 'further contains a computer tool for calculating the loss tangent function of a non-conductive material' its non-conductive material is placed near the tip of the electrode probe ' The electric constant is a function of Q 値 's offset and Q Wei's i translation is caused by compliance. The conductive material is close to the probe tip. 13. For the microscope of the scope of application for patent No. 12, in which the brain tool is programmed to calculate the loss tangent function of benzene from Equation 3. 14. The microscope of item 9 in the scope of patent application, wherein the power detector '.... is a diode detector. 15. The microscope according to item 9 of the scope of patent application, wherein the frequency detector includes a phase shifter, a phase detector, and an integrator. 16. The microscope of item 9. in the patent application, wherein the probe has a resonator and the cavity is filled with a non-conductive material. Π. The microscope of item 16 in the scope of patent application, wherein the non-conductive material is sapphire. 18. For the microscope with the scope of patent application No..17, the non-conductive material is SrTi03. 19. For the microscope of item 9 of the scope of patent application, in which the probe tip extends a certain distance from the hole, the distance is between about 1/3 and 3 times the distance through the hole. .20. As for the microscope in the 9th scope of the patent application, the hole in the barrier at the end of the φ resonator is circular, and its diameter is about 1 / 20th of a millimeter. ) A4 size (210 X 297 public love) ---------------------- Order --------- line (Please read the note on the back first Please fill in this page again for details) A8 B8 C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. The scope of patent application is between micron and approximately 3 mm. 21. The microscope of claim 9 in which the frequency generator includes a voltage controlled oscillator. 22. A microscope such as the scope of patent application No. 21, wherein the frequency generator operates in the field of microwaves'. 23. The microscope of item 9 of the patent application, wherein the frequency controller is digital. 24. — A method for measuring the dielectric constant and loss tangent function of a sample, including: j) Determine a reference resonance frequency f of the probe, by .Y). Place the probe far enough away from the sample material , Make it not affected by the sample; vi) scan a frequency cage; vii) draw a curve of frequency versus power; line graph ;, viii) cooperate with a curve to know its maximum frequency, called f〇; 1〇 borrow Q is determined by dividing f0 by the difference between the frequencies corresponding to the two half power amplitude points. .1). Calculate the coefficient M from the equation S = MQQt, where S is the power at f0; nr) Calibrate the geometric factors A, E in equations 5 and 6 by samples of known dielectric constants. B and R〇η) The scanning evanescent electromagnetic wave is displayed: a probe tip of the micromirror is placed near the sample or the sample is stably touched; 〇) the resonance frequency change caused by the approach of the sample near the probe 4 (Please read the precautions on the back before filling this page)-\ = DX% This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) A8 B8 C8 D8 Employee Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Printed 6. Patent application range is between micron and about 3 mm. 21. The microscope of claim 9 in which the frequency generator includes a voltage controlled oscillator. 22. A microscope such as the scope of patent application No. 21, wherein the frequency generator operates in the field of microwaves'. 23. The microscope of item 9 of the patent application, wherein the frequency controller is digital. 24. — A method for measuring the dielectric constant and loss tangent function of a sample, including: j) Determine a reference resonance frequency f of the probe, by .Y). Place the probe far enough away from the sample material , Make it not affected by the sample; vi) scan a frequency cage; vii) draw a curve of frequency versus power; line graph ;, viii) cooperate with a curve to know its maximum frequency, called f〇; 1〇 borrow Q is determined by dividing f0 by the difference between the frequencies corresponding to the two half power amplitude points. .1). Calculate the coefficient M from the equation S = MQQt, where S is the power at f0; nr) Calibrate the geometric factors A, E in equations 5 and 6 by samples of known dielectric constants. B and R〇η) The scanning evanescent electromagnetic wave is displayed: a probe tip of the micromirror is placed near the sample or the sample is stably touched; 〇) the resonance frequency change caused by the approach of the sample near the probe 4 (Please read the notes on the back before filling in this page)-\ = DX% This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 VI. Application scope, P) Change of figure of merit caused by the approach of the sample near the measuring probe: and q) Use a formula to calculate the dielectric constant and loss tangent function. The contact equations 2 and 3, the probe-sample gap equations 5 and 6 are selected from a group of equations or a thin film equation. 25. The method according to item 24 of the patent application scope, wherein one or two Luorenzi line patterns are used to determine the frequency vs. power curve of f0 and Qo. .26.—A method for measuring a conductive sample: the coefficient of conductivity, including: a) determining a reference resonance frequency of the probe f0: i) placing the probe far enough away from the sample material so that it is not affected by Sample impact; i_i). Scan a frequency range; Ui) Draw a frequency vs. power curve; iv) Match a curve to know its maximum frequency, called f0; b) By dividing ..fo .. Take two: lift the car, fe point, and select the frequency and cheap rate to determine the Qg; c.) Calculate by the equation S. = &Quot; MQ_〇.2. Calculate the coefficient. Bin Single 1 is-the rate of work in u quan; d) place a probe tip of a scanning evanescent electromagnetic microscope near the sample, e) borrow the worm. Measure and-cooperate with Pinning and Pinyi. Factor The geometric factors A, B and R0 'of the control car in the formulas 12 and I9. Are frequency and figure of merit probes. The 5-degree scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). ) '~~~' ~~~-:-(Please read the notes on the back before filling this page) -------------. ^ W ------ Γ— ^ --------- Line-Printed by A8, B8, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs C8 D8 VI. Application scope, P) Change of figure of merit caused by the approach of the sample near the measuring probe: and q) Use a formula to calculate the dielectric constant and loss tangent function. The contact equations 2 and 3, the probe-sample gap equations 5 and 6 are selected from a group of equations or a thin film equation. 25. The method according to item 24 of the patent application scope, wherein one or two Luorenzi line patterns are used to determine the frequency vs. power curve of f0 and Qo. .26.—A method for measuring a conductive sample: the coefficient of conductivity, including: a) determining a reference resonance frequency of the probe f0: i) placing the probe far enough away from the sample material so that it is not affected by Sample impact; i_i). Scan a frequency range; Ui) Draw a frequency vs. power curve; iv) Match a curve to know its maximum frequency, called f0; b) By dividing ..fo .. Take two: lift the car, fe point, and select the frequency and cheap rate to determine the Qg; c.) Calculate by the equation S. = &Quot; MQ_〇.2. Calculate the coefficient. Bin Single 1 is-the rate of work in u quan; d) place a probe tip of a scanning evanescent electromagnetic microscope near the sample, e) borrow the worm. Measure and-cooperate with Pinning and Pinyi. Factor The geometric factors A, B and R0 'of the control car in the formulas 12 and I9. Are frequency and figure of merit probes. The 5-degree scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). ) '~~~' ~~~-:-(Please read the notes on the back before filling this page) -------------. ^ W ------ Γ— ^ --------- Line-Printed by A8, B8, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs C8 D8 6. Excessive patent application scope and known conductivity coefficients to participate in the test—a function of one-to-one distance between spots between replicas. F) Near the measuring probe. Due to the sample spot approaching. The change in resonance frequency; g) calculated by Equation 12; h) the change in the figure of merit caused by the approach of the sample near the measuring probe. &Quot;.Movement; and i) use Equation 19 to calculate the conductivity . 27 · —A method of adjusting the distance between the probe tip of a scanning _ evanescent electromagnetic microscope and the conductive sample to be scanned, packing: a) Select a better distance between the tip and the sample, gp; 1 b ) Determine a reference resonance frequency f0 of the probe: i) Place the probe far enough away from the sample material Λ. Make it unaffected by the sample; ^) Scan a frequency range; i, ii) Draw the frequency A graph of power; iv) A curve is used to learn its original rate, called; c) Q is determined by dividing f0. By the frequency difference corresponding to the two half power amplitude point Q $; d) Calibrate the equation by measuring and matching the frequency and figure of merit; the geometric factors A, B, and RQ in 12 and 19 'are the frequency and figure of merit of the gap distance between the probe tip and a reference sample of known conductivity g 之 —a function; 6 (Please read the notes on the back before filling this page) This paper size is applicable to China's National Tombs and Trees (CNS) A4 specification (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. Exhausting patent applications and known conductivity coefficients to participate in — A unitary function of the spot-to-segment distance between replicas; f) near the measuring probe; the change in resonance frequency due to the sample spot approaching; g) to calculate g from equation 12; h ) Change in the figure of merit caused by the proximity of the sample due to the proximity of the measurement probe; and i) Use Equation 19 to calculate the conductivity. 27 · —A method of adjusting the distance between the probe tip of a scanning _ evanescent electromagnetic microscope and the conductive sample to be scanned, packing: a) Select a better distance between the tip and the sample, gp; 1 b ) Determine a reference resonance frequency f0 of the probe: i) Place the probe far enough away from the sample material Λ. Make it unaffected by the sample; ^) Scan a frequency range; i, ii) Draw the frequency A graph of power; iv) A curve is used to learn its original rate, called; c) Q is determined by dividing f0. By the frequency difference corresponding to the two half power amplitude point Q $; d) Calibrate the equation by measuring and matching the frequency and figure of merit; the geometric factors A, B, and RQ in 12 and 19 'are the frequency and figure of merit of the gap distance between the probe tip and a reference sample of known conductivity g 之 —a function; 6 (Please read the notes on the back before filling this page) This paper size is applicable to China National Tossing Tree (CNS) A4 specification (210 X 297 mm) A8 B8 C8 D8 VI. Patent application scope e) Measure the resonance frequency and get the absolute difference between it and the reference frequency, f) It is necessary to recover the gap-gap distance to gp ~ 'and calculate the change in gap_g; g) Electrochemically adjust the distance between the tip of the probe and the beauty of the sample to be scanned. The chick is equal to ... gp ...; .. .... At _1 h), repeat the path to g) at a set time interval until the scanning process is completed. 28. A method for adjusting the distance between the probe tip of a scanning evanescent electromagnetic microscope and a non-conductive sample to be scanned, including: a) selecting a better distance between the tip and the sample, gp; b) Determine a reference resonance frequency f0 of the probe: i) Place the probe far enough away from the sample material of the chick so that it is not affected by the sample. Ii) Draw a frequency range; Draw the frequency versus power Iv) Cooperate with a curve to find its maximum frequency, which is called f0; c) Determine Qo by dividing dagger by two half power amplitude: the frequency corresponding to the point d) by the equation; S = Use MQq2 to calculate the coefficient M, where S is the power at f0; e) use samples with known dielectric constants to calibrate the geometric factors A, B, and RQ in Equations 5 and 6; f) shake samples to change The gap distance g 'between the tip and the sample is where the magnitude of the vibration is slight, such as a slight vibration caused by a piezoelectric component. 7 This paper size applies to the Chinese National Standard (CNS) A4 specification (2,037 mm) (Please Read the notes on the back before filling out this page} -螫.！ Order --------- line · Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 VI. Patent application scope e) Measure the resonance frequency and get the absolute value between it and the reference frequency Rate, f) Need to recover the gap-gap distance to gp ~ 'and calculate the change in gap_g; g) Electrochemically adjust the distance between the tip of the probe and the beauty of the sample to be scanned. The chick is equal to ... gp. ..; ... at _1 h) to repeat the process at a set time interval to g) until the scanning process is completed. 28. A method for adjusting the distance between the probe tip of a scanning evanescent electromagnetic microscope and a non-conductive sample to be scanned, including: a) selecting a better distance between the tip and the sample, gp; b) Determine a reference resonance frequency f0 of the probe: i) Place the probe far enough away from the sample material of the chick so that it is not affected by the sample. Ii) Draw a frequency range; Draw the frequency versus power Iv) Cooperate with a curve to find its maximum frequency, which is called f0; c) Determine Qo by dividing dagger by two half power amplitude: the frequency corresponding to the point d) by the equation; S = Use MQq2 to calculate the coefficient M, where S is the power at f0; e) use samples with known dielectric constants to calibrate the geometric factors A, B, and RQ in Equations 5 and 6; f) shake samples to change The gap distance g 'between the tip and the sample is where the magnitude of the vibration is slight, such as a slight vibration caused by a piezoelectric component. 7 This paper size applies to the Chinese National Standard (CNS) A4 specification (2,037 mm) (Please Read the notes on the back before filling out this page} -螫.！ Order --------- Line · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. The scope of patent application is dynamic, and the frequency of vibration is in the above component C) Within the frequency difference; g) Measure the intensity of the average harmonic of the first harmonic of the resonance frequency; 'h) Solve equations 20 and 21 to get g; i) Need to restore the gap distance to gP, and calculate the change in gap distance J) Electrochemically adjust the distance between the tip of the probe and the sample to be scanned equal to gp; and k) Repeat steps e) to g) at a set time interval period until the scanning procedure is complete. '(Please read the precautions on the back before filling out this page) ----- Order ----- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Online Economics 8 This paper size applies to China National Standard (CNS) A4 (210 X 297 Mm) A8 B8 C8 D8 VI. Patent application range, and the frequency of the vibration is within the frequency difference of the above-mentioned component C); g) the average unfortunately the first harmonic of the resonance frequency is measured; 'h) Solve equations 20 and 21 to obtain g; i) Need to restore the gap distance to gP and calculate the change in gap distance; j) Electrochemically adjust the distance between the tip of the probe and the sample to be scanned equal to gp; And k) Repeat steps e) to g) at a set interval time interval until the scanning procedure is completed. '(Please read the precautions on the back before filling out this page) ----- Order ----- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Online Economy Mm)