經濟部中央樣準局员工消費合作社印裝 A7 ___B7_ 五、發明説明（l ) 坊斯镅》 本發明係有鼷矽晶圃之處理液、及製造晶園處理液之 方法，尤其是有鬮防止矽晶匾表面由於微粒子引起的污染 之矽晶圚處理液及其製造方法。 背暑坊》 於由矽單晶而成之半導艚基板（晶園wafer)上形成LSI 之半導Η積«霣路裝置之製造步驟，將基板表面之氧化膜 (Si〇2)製成布嬢_案（Patterning)又於熱處理步驟去除基 板表面形成的自然氧化膜之際，進行採用氨氟酸（HF)水溶 液的溉式触刻處理Uet etching)。此外Si〇2表面之蝕刻 處理係以氫氟酸（HF)水溶液或經級衝的氳氟酸水溶液（HF-NH4F-H2〇)進行處理。又SilU之触刻處理係酸（H3P〇4) 水溶液進行處理。又Si表面之蝕刻處理係以氳氟酸（HF)-硝酸（HN03)水溶液或氫氟酸（HF)-硝酸（HN03)-醱酸（ CH3C00H)水溶液進行處理。此外於形成配線步驟等，於去 除基板之表面上附蕃的金靨之際，進行氫氟酸（HF)水溶液 、氳氟酸（HF)-ift氧化氫（H2〇2)水溶液、或塩酸（HC1)-過 氣化氫（H2〇2)水溶液之濕式洗淨處理。於此等之瀰式洗淨 處理、為防止異物附著於上述去除氧化膜或金羼等之後之 活性基板之表面上，則需努力於使鍤刻液或洙淨液循環通 濾等保持胜刻液或洙淨液之澝淨度。 近來嫌著積»霣路之微细化，雎然上述蝕刻液或洗淨 液被要求更高的清淨度，然而由於晶圓製程之增加或晶圖 之大口《化，被帶入處理權内之異物反而有增加的趨努。 本紙&尺度適用中國國家標準（CNS ) A4規格（2I0X297公釐) J 38600 (請先閱讀背面之注意事項再填寫本頁)Printed by A7 _B7_ in the Consumer Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (l) Fangshuang This invention relates to a processing solution for silicon crystal gardens, and a method for manufacturing a crystal garden processing solution, especially to prevent it. Silicon crystal osmium treatment liquid contaminated by particles on the surface of silicon crystal plaque and its manufacturing method. "Summer House" On the semiconductor semiconductor substrate (crystal wafer) made of silicon single crystal (semiconductor wafer) to form a semiconducting semiconductor «conductor device manufacturing steps, the substrate surface of the oxide film (Si〇2) is made In the case of patterning, when the natural oxide film formed on the surface of the substrate is removed in the heat treatment step, a wet etching process (Uet etching) using an aqueous solution of ammonium fluoride (HF) is performed. In addition, the etching treatment of the surface of SiO2 is treated with an aqueous solution of hydrofluoric acid (HF) or an aqueous solution of hydrofluoric acid (HF-NH4F-H2〇). In addition, SilU's touch-treatment acid (H3P04) aqueous solution was used for treatment. The etching treatment of the Si surface is treated with a hydrofluoric acid (HF) -nitric acid (HN03) aqueous solution or a hydrofluoric acid (HF) -nitric acid (HN03) -phosphonic acid (CH3C00H) aqueous solution. In addition, in the step of forming a wiring, etc., when removing the gold worms attached to the surface of the substrate, an aqueous solution of hydrofluoric acid (HF), an aqueous solution of hydrofluoric acid (HF) -ift hydrogen oxide (H2O2), or an aqueous solution of arsenic acid ( HC1)-Wet cleaning treatment of hydrogenated hydrogen (H2O2) aqueous solution. In such a micro-cleaning treatment, in order to prevent foreign matter from adhering to the surface of the active substrate after the above-mentioned removal of the oxide film or gold tincture, it is necessary to work hard to keep the etching liquid or the sanitation liquid circulating through filtration, etc. The purity of the liquid or liquid. Recently, it has been suspected that the miniaturization of the product is difficult. The above-mentioned etching solution or cleaning solution is required to have a higher degree of cleanliness. However, due to the increase in the wafer process or the large mouth of the crystal map, it has been brought into the processing right. Instead, foreign objects tend to increase. This paper & size applies Chinese National Standard (CNS) A4 specification (2I0X297 mm) J 38600 (Please read the precautions on the back before filling this page)
A7 B7 經濟部中央標準局員工消费合作社印製 五、發明説明（ 2 ) | 因 此 » 至 百 前 為 止 雖 已 開 發 有 於 上 述 處 理 液 等 之 内 添 1 1- 加 界 面 活 性 m 的 技 術 > 但 不 論 任 何 方 法 t 即 使 令 界 面 活 性 • 1, m 高 濃 度 之 HF !或Η 2〇 2 % HH〇3、 CHsCOOH NH 4F > HC 1、 HaPO 4 及 般 式 [(Ri )(R2 )(R3 )(R4 )M] + OH- (R 1 9 R2 » R 3 t 請 先 閲 1 1 1 R4 示各自有羥基亦可的磺數1 6之烷基）表 示 的 氬 氧 化 銨 讀 背 1 1 I 溶 解 至 溶 解 度 為 止 % 稀 釋 或 輿 其 他 蕖 品 混 合 時 9 則 有 界 面 之 注 素 1 1 活 性 劑 變 稀 薄 而 未 能 得 到 降 低 粒 子 附 著 之 效 果 的 問 匾 存 在 項 再 1 1 0 此 外 f 即 使 於 稀 釋 或 與 其 他 藥 品 混 合 時 添 加 界 面 活 性 劑 填 % 本 Γ丨 之 情 形 9 不 僅 费 神 ， 且 為 獲 得 足 夠 的 降 低 粒 子 附 著 之 效 果 頁 1 1 » 有 必 要 大 ft 添 加 界 面 活 性 劑 f Μ 致 生 成 所 謂 起 泡 剌 烈 的 1 1 間 m 0 1 1 本 發 明 人 等 由 此 種 觀 黏 > 曾 提 出 申 謫 藕 由 已 添 加 陰 鑼 訂 子 % 界 面 活 性 m 或 非 離 子 系 界 面 活 性 m 於 低 濃 度 之 氫 氟 酸 1 1 1 I 等 而 成 的 處 理 液 予 以 處 理 以 防 止 矽 晶 圚 表 面 由 於 微 粒 子 引 起 的 污 染 之 方 法 (日本特開平6 - 417705* ) » 惟 仍 有 保 存 及 1 1 搬 理 敗 率 低 劣 的 問 嫌 存 在 〇 此 外 t 於 該 曰 本 特 開 平 6- 1 41770 虢 記 載 的 界 面 活 性 麵 是 否 能 高 m 度 的 溶 解 於 高 濃 度 1 :丨 之 氩 氟 酸 内 則 不 甚 明 瞭 0 1 本 發 明 之 百 的 係 於 洙 淨 處 理 或 胜 刻 處 理 晶 圆 表 面 時 9 I 提 供 使 特 定 的 界 面 活 性 m 包 含 於 高濃度之HF或H2 〇2 ΗΗ03 1 1 I > CH3C00H , HH4F、 HC 1 HaPO 4 及 — 般 式 [(Ri )(R2) (R3 ) 1 1 (R 4 ) N] + 0H - (R 1、 R 2 N R 3、 R 4示各自有羥基亦可的磺數1 1 1 6之烷基）表 示 的 氫 氧 化 銨 不 致 形 成 起 泡 間 思 Λ 溶 解 性 優 1 異 、 保 管 及 搬 運 效 率 高 且 使 用 即 使 稀 釋 或 低 灞 度 時 亦 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 38600 A7 B7 經濟部中央標準局貝工消費合作社印製 五、發明説明（ 3 ) 可 防 止 晶 圓 表 面 由 於 微 粒 子 引 起 的污 染 之 作用優 越的晶圃 1 卜 之 處 理 液 〇 1 本 發 明 之 另 — 巨 的 係 提 供 於 洗淨 處 理 或触刻 處理晶圓 表 面 時 9 在 防 止 晶 躕 表 面 由 於 微 粒子 引 起 的污染 之作用方 請 先 5A 1 1 1 面 優 越 的 晶 圓 之 處 m 液 0 讀 背 面 1 1 a. 明 7 椹 示 1 1 畫 | 本 發 明 係 有 Η 於 20 60簠 鼉 96氧 氟 酸 (HF)内 ,溶解 ψ 項 再 1 I Cn Η2 η + 1 Ph (S0 3M)OPh (S〇3 M) (Ph示伸苯基、 η示5〜20、Μ示 填 窝 本 頁 ( 水 I S 或 塩 )、 C nH 2 η ♦ 1 PhO (CH2CH2 0).S〇3 M (Ph 示伸苯基、η 1 1 示 5〜20, 示 0 〜2(Κ Μ示氫或塩）及C nH 2 η -1〇 (CH2CH2O)- 1 1 S〇3M (η示 5, -2(K 1 示 0〜2(Κ Η示氫或塩 )之至少- -種使成 1 | 0 . 1 〜ΙΟΟΟρρ· 9 餘 ft 為 水 (合計100璽 董 % )而成之晶圖處 訂 . 理 液 9 及 於 此 處 理 液 内 加 入 水 H2〇2 > HH〇3\ CH3C00H > 1 1 1 NH4F 等 而 成 低 m 度 晶 圓 處 理 液 之 製造 方 法 0 L 1 1 又 9 本 發 明 係 有 Η 於 HF H2 0 2、 HN〇3 、CH3C00H、 1 1 HH4F HC K Η 3 P 0 4及式 [(Ri )(R2 )(R3 )(R4 )Η]+0Η _ ( R 1、R 2 1 Λ R3 R4 示 各 白 有 羥 基 亦 可 的 碳 數1， -6之 垸基） 表示的氫_ 1 :丨 氧 化 被 之 至 少 一 種 內 溶 解 C η Η2 η + iPh0 (CH2CH2O) · SOsH (Ph 丨 示 伸 苯 基 、 η 示 5〜20、 示 0〜20、Μ示氫或塩）表示的界 '1 | 面 活 性 劑 之 至 少 一 種 使 成 〇. 01 ΙΟΟΟρρ Β ，餘為 為水（合 1 1 I 計 1〇〇簠 i ;)而成之 晶 圃 處 理 液 0 1 1 於 本 發 明 可 得 添 加 有 上 述 特定 界 面 活性麵 之氟化氬 1 1 水 溶 液 (HF- Hz 0) 、 氫 氟 酸 氧 化 氫水 溶 液 (HF-H2 O2-H2O) 1 、 氩 m 酸 硝 酸 水 溶 液 (HF- ΗΝ〇3 -H 2 0 ) 氫 氟酸硝 酸釅酸水 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 3 38 600 經濟部中央標準局負工消費合作社印製 A7 B7 五、發明説明（4 ) 溶液（HF-HNO3-CH3COOH-H2O)、埋缓衡的氩氟酸水溶液（ HF-NH4F-H20)、塩酸過氧化氳水溶液（HCI-H2O2-H2O)、璘 酸水溶液（H3PO4-H2O)、氫氧化按邊氣化氫水溶液（[(RO U2)(R3)(R4)H]+OH--H2〇2-H2〇)等之洗淨及蝕刻處理液。 於本發明，可得使含有特定的界面活性劑之高潇度之 氫氟酸水溶液（HF-H20)糸之晶園處理液，於該晶圆處理液 内加人水，H2O2、HN〇3、CHaCOOH.、NIUF等製備而得上述 各種晶圓處理液之情形亦可得相同效果。 於本發明，由使含有上述界面活性劑之氲氟酸水溶液 而成的晶圃處理液，其氫氟酸濃度M20〜50簠量％為宜， 界面活性莆漘度M0.1〜IOOOpp·之範麵為宜。 於此等晶圓處理液內加人水、H20 2、HH〇3、CH3C00H 、NH4F等製備各種晶圓處理液時，其中氬氟酸水溶液（HF-H2〇)以氢氟酸濃度為0.1〜5重量％較宜。氢氟酸遇氧化氩 水溶液（HF-H2O2-H2O) Μ氫氟酸濃度為0.1〜10重量 Η2〇2溻度為0.01〜30簠量*較宜。氩氟酸硝酸水溶液（HF-HH〇3-H2〇)M氩氟酸濃度為0.1〜50重量》, ΗΗ03禳度以 0.1〜70重1«較宜。氫氟酸硝酸醱酸水溶液（1^-1^〇3-CH3C00H-H20)W氫氟酸濃度為0.1〜50重董《：、003濃度 為0.1〜70重量X、CHaCOOH灞度為0.1〜50重躉％較宜。 經嫒衡的氫氟酸水溶液（HF-NH4F-H2〇)M氫氟酸瀆度為0 . 1 〜10重量％、NH4F溻度為1〜40重量％較宜。塩酸通氧化 氩水溶液（HCl-H2〇2-H2〇)K塩酸濺度為0.1〜36重量κ、 Η2〇2濃度為0.1〜30重1 %較宜。磷酸水溶液（Η3ΡΟ4-Η2Ο) (請先閱讀背面之注意事項再填寫本頁) 訂 本紙張尺度適用中國國家標準（CNS ) A<t規格（210Χ297公釐） 4 38600 經濟部中央標準局負工消费合作社印製 A7 B7 五、發明説明（5 ) 以磷酸瀟度1〜90重量*較宜。第4级銨塩過氣化籯水溶液 ([(Rl) U2) (R3) (R4)H]H-H2〇2-H2〇]M 氳氧化銨濃度為 0.01〜10蕹量H2O2濃度為0.01〜30重量*較宜。 本發明所用的氲氣化銨係Μ式[(Ri)(R2)U3UR4)H + ] OH-Ui, R2, Ha, IU示各自有羥基亦可的«數1〜6之烷基 )表示的氬氧化銨。至於烷基可列舉計有甲基、乙基、丙 基、丁基、己基等。具鱺的化合物可列舉計有[H0CH2CH2N (CH3)3]+〇H_(膽 tt), [(CH3)4N]+0H_, [(C2H5)4N]+0H-等 ΟA7 B7 Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (2) | Therefore »Although the technology of adding 1 1- interfacial activity m to the above-mentioned treatment fluid has been developed up to a hundred years ago, but Regardless of the method, even if the interfacial activity is made up to 1.m, high concentration of HF! Or Η202% HH03, CHsCOOH NH 4F > HC 1, HaPO 4 and the general formula [(Ri) (R2) (R3) (R4) M] + OH- (R 1 9 R2 »R 3 t Please read 1 1 1 R4 shows ammonium argon oxide represented by 1 and 1 sulphur number and also sulphur number 16) Read back 1 1 I dissolve Up to solubility% When diluted or mixed with other counterfeit products, 9 there are interface injections. 1 1 The active agent becomes thinner and the effect of reducing the particle adhesion is not obtained. 1 1 0 In addition, f Adding surfactants when mixing other medicines, %% of this case is not only laborious, but also to reduce the particle adhesion sufficiently Effect Page 1 1 »It is necessary to add a large ft of surfactant f Μ to generate so-called blistering fierce 1 1 m 0 1 1 The inventor and others have suggested from this observation > Yin Gong Zi% Interfacial activity m or non-ionic interfacial activity m A treatment solution made of a low concentration of hydrofluoric acid 1 1 1 I, etc. is treated to prevent the contamination of the surface of silicon crystals by fine particles (Japanese special method) Kaiping 6-417705 *) »However, there are still doubts about the preservation and the poor removal rate of 1 1 removal. In addition, whether the surface active surface described in this Japanese Patent Publication No. 6- 1 41770 高 can be dissolved at a high degree of m High-concentration 1: It is not clear in the argon fluoride acid. 0 One hundred of the present invention is applied to the surface treatment of wafers or etched wafers. 9 I provides the specific interface activity m contained in high-concentration HF or H2 〇2 ΗΗ03 1 1 I > CH3C00H, HH4F, HC 1 HaPO 4 and — general formula [(Ri) (R2) (R3) 1 1 (R 4) N] + 0H-(R 1, R 2 NR 3, R 4 shows each has its own Hydroxyl is also an alkyl group with a sulfon number of 1 1 1 6). It does not form blistering. It has excellent solubility. 1 It has high storage and handling efficiency. It is used even when diluted or at low levels. Paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 38600 A7 B7 Printed by Shelley Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (3) It can prevent the surface of the wafer from being polluted by particles. The crystal garden with excellent function 1 Buzhi treatment solution 〇1 Another aspect of the present invention is provided by the giant system when cleaning or touching the wafer surface 9 In order to prevent the contamination of the surface of the crystal wafer due to particles, please first 5A 1 1 1 Wafer with superior surface m Liquid 0 Read back 1 1 a. Ming 7 椹 1 1 Drawing | The present invention has Η in 20 60 簠 鼍 96 hydrofluoric acid (HF), dissolves ψ term and then 1 I Cn Η2 η + 1 Ph (S0 3M) OPh (S〇3 M) (Ph shows phenylene , Η shows 5 ~ 20, M shows the filling page (water IS or 塩), C nH 2 η ♦ 1 PhO (CH2CH2 0). S〇3 M (Ph shows phenyl, η 1 1 shows 5 ~ 20 , Showing 0 ~ 2 (K M shows hydrogen or hydrazone) and C nH 2 η -10 (CH2CH2O)-1 1 S〇3M (η shows 5, -2 (K 1 shows 0 ~ 2 (K 示 shows hydrogen or塩) at least-a kind of crystal map made of 1 | 0.1 ~ ΙΟΟΟρρ · 9 more than ft is water (total of 100% of the total crystals). Adding water H2 to the treatment liquid 9 2 > HH〇3 \ CH3C00H > 1 1 1 NH4F and other low m degree wafer processing liquid manufacturing method 0 L 1 1 and 9 The present invention is based on HF H2 0 2, HN〇3, CH3C00H, 1 1 HH4F HC K Η 3 P 0 4 and formula [(Ri) (R2) (R3) (R4) Η] + 0Η _ (R 1, R 2 1 Λ R3 R4) shows the number of carbons that can have hydroxyl groups in each white 1, -6 fluorenyl) hydrogen _ 1: 丨 oxidized by at least one of the dissolved C η Η 2 01 + at least one kind of surfactant represented by η + iPh0 (CH2CH2O) · SOsH (Ph 丨 shows phenylene, η shows 5 to 20, 0 to 20, M shows hydrogen or fluorene) ΙΟΟΟρρρ Β, the rest is water (total 1 1 I counted as 100 簠 i;) crystal garden treatment solution 0 1 1 In the present invention, an argon fluoride 1 1 aqueous solution (the above-mentioned specific interface active surface) can be obtained ( HF-Hz 0), hydrofluoric acid hydrogen oxide aqueous solution (HF-H2 O2-H2O) 1, argon m acid nitric acid aqueous solution (HF- ΗΝ〇3 -H 2 0) hydrofluoric acid nitrate acid water 1 1 paper size Applicable to China National Standard (CNS) A4 specification (210X297 mm) 3 38 600 Printed by A7 B7 of the Consumers' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (4) Solution (HF-HNO3-CH3COOH-H2O), buried buffer Aqueous argon fluoride acid solution (HF-NH4F-H20), osmic acid osmium peroxide aqueous solution (HCI-H2O2-H2O), osmic acid aqueous solution (H3PO4-H2O), hydrogenated hydrogenated hydrogenated aqueous solution ([(RO U2) (R3) (R4) H] + OH--H20-H2〇) and other cleaning and etching treatment liquid. In the present invention, a crystal garden treatment solution containing a high-aqueous hydrofluoric acid solution (HF-H20) containing a specific surfactant can be obtained, and water, H2O2, HNO3, and CHaCOOH are added to the wafer processing solution. The same effect can also be obtained in the case of the above-mentioned various wafer processing liquids prepared by. In the present invention, the hydroponic acid concentration of the hydroponic acid aqueous solution containing the above-mentioned surfactant in the hydrofluoric acid aqueous solution is preferably 20 to 50% by volume, and the interfacial activity degree is M0.1 to 1000pp. Fan Fan is appropriate. When various wafer processing liquids are prepared by adding human water, H20 2, HH03, CH3C00H, NH4F, etc. to these wafer processing liquids, the hydrofluoric acid aqueous solution (HF-H2〇) has a hydrofluoric acid concentration of 0.1 to 5 wt% is preferred. Hydrofluoric acid meets the argon oxide aqueous solution (HF-H2O2-H2O). The concentration of hydrofluoric acid is 0.1 ~ 10 weight, and the degree of 203 is 0.01 ~ 30. Argon-fluoric acid nitric acid aqueous solution (HF-HH03-H2O) M argon-fluoric acid concentration is 0.1 to 50% by weight, and ΗΗ03 ° is preferably 0.1 to 70% by weight. Hydrofluoric acid nitric acid aqueous solution (1 ^ -1 ^ 〇3-CH3C00H-H20) W Hydrofluoric acid concentration of 0.1 ~ 50 wt. Dong :, 003 concentration of 0.1 ~ 70 wt. X, CHaCOOH degree of 0.1 ~ 50 Weight 宜% is more appropriate. The balanced hydrofluoric acid aqueous solution (HF-NH4F-H2〇) M hydrofluoric acid degree is preferably 0.1 to 10% by weight, and the NH4F degree is preferably 1 to 40% by weight. Pyrene oxide oxidation Argon aqueous solution (HCl-H2 02-H2〇) K spontaneous acid splash is preferably 0.1 to 36 weight κ, and the concentration of fluorene 202 is 0.1 to 30 weight 1%. Phosphoric acid aqueous solution (Η3ΡΟ4-Η2Ο) (Please read the notes on the back before filling this page) The size of the paper is applicable to the Chinese National Standard (CNS) A < t specification (210 × 297 mm) 4 38600 Off-line consumption by the Central Standards Bureau of the Ministry of Economic Affairs Cooperatives printed A7 B7 V. Description of the invention (5) It is more suitable to use phosphoric acid with a weight of 1 ~ 90 *. Level 4 ammonium osmium pergassed rhenium aqueous solution ([(Rl) U2) (R3) (R4) H] H-H2〇2-H2〇] M 氲 Ammonium oxide concentration is 0.01 ~ 10 蕹 Amount H2O2 concentration is 0.01 ~ 30 weight * is more suitable. The tritium ammonium gaseous system used in the present invention is represented by the formula [(Ri) (R2) U3UR4) H +] OH-Ui, R2, Ha, IU represents an alkyl group of 1 to 6 each having a hydroxyl group) Argon oxide. Examples of the alkyl group include methyl, ethyl, propyl, butyl, and hexyl. Examples of compounds with fluorene include [H0CH2CH2N (CH3) 3] + 〇H_ (biliary tt), [(CH3) 4N] + 0H_, [(C2H5) 4N] + 0H-, etc. 〇
至於本發明所用之界面活性Μ式CnH2n+1Ph( S〇3M)OPh(S〇3M)(Ph示伸苯基，η示5〜20, Μ示氳或塩）、 CnH2rt+iPhO(CH2CH2〇)^S〇3M(Ph示伸苯基，η示 5〜20、示 0 〜2 0、Μ 示氫或壇）及 C " Η 2 η + 1 0 ( C Η 2 C Η 2 0 ) S 0 3 Μ ( η 示 5 〜2 0 、示0〜20、Μ示氩或塩）表示的界面活性_為宜。在此塩 可列舉計有納、鉀等之_金颺塩、銨鹽、第一、第二或第 三胺«等）。至於R可舉出有CH3KH2、 （CH3)2NH、 （CH3)3N 等〇 具臞例可列舉計有Ci2H2sPh(S〇3H)OPh(S〇3H)、 Ci2H2S〇(CH2CH2〇)2S〇3H、CaHi9l>hO(CHiCH2〇)4S〇3H、 Ci2H2S〇(CH2CH2〇)4S〇3Na、C9Ht9l>hO(C；H2CH2〇)6S〇3H 及此 等之金屬《、銨埴、第一、第二或第三肢塩等，界面活性 蘭濃度任一者均為0.01〜IOOOpp·,尤W0.01〜1〇〇ρρ·之 範_為宜。 瞀豳费明而摟的*住形艚 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） 386 00 (請先閎讀背面之注$項再填寫本頁) 訂 A7 __B7_ 五、發明説明（6 ) 以下舉出實腌例及比較例予Μ說明。 竇）fcMI〜hh»例1〜5 將附有自然氧化膜之4英吋矽晶圖浸人添加有粒徑約 0.6«·之聚苯乙烯乳膠標準粒子於0.5¾ HF水溶液中使微 粒子數成為10s個/·1 ,進一步添加表1所示之各種界面活 性劑而調配成的處理液之中10分鐘。其後Μ超純水濟洗並 予乾燥後，使用雷射表面檢査装*(甲立霣子工程公司翳 造LS-5000)澜定附著於矽晶圃表面上之微粒子數，结果示 於表1。表1之附著粒子數係對各2片矽晶圆予Μ處理，Μ 2片之平均值記載之。 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 6 38600As for the interface activity used in the present invention, the formula M is CnH2n + 1Ph (SO3M) OPh (SO3M) (Ph represents phenyl, η represents 5-20, and M represents 氲 or 塩), CnH2rt + iPhO (CH2CH2) ^ S〇3M (Ph shows phenyl, η shows 5 ~ 20, 0 ~ 20, M shows hydrogen or altar) and C " Η 2 η + 1 0 (C Η 2 C Η 2 0) S 0 The interfacial activity represented by 3M (η is 5 to 20, 0 to 20, and M is argon or krypton) is preferred. Here, we can list _Jinyang_, ammonium salts, first, second or third amines etc. which include sodium, potassium, etc.). Examples of R include CH3KH2, (CH3) 2NH, and (CH3) 3N. Examples include Ci2H2sPh (S〇3H) OPh (S〇3H), Ci2H2S〇 (CH2CH2〇) 2S〇3H, CaHi9l > hO (CHiCH2〇) 4S〇3H, Ci2H2S〇 (CH2CH2〇) 4S〇3Na, C9Ht9l > hO (C; H2CH2〇) 6S〇3H and these metals ", ammonium hafnium, first, second or third For limb salamander, etc., the concentration of the interface active blue is 0.01 to 1000 pp ·, especially W 0.01 to 100 ρρ ·.瞀 豳 Fei Minger's * Ling-shaped paper This paper size is applicable to the Chinese National Standard (CNS) A4 size (210X297mm) 386 00 (Please read the note $ on the back before filling this page) Order A7 __B7_ 5 Explanation of the invention (6) The following will describe examples of pickling and comparative examples. (Sinus) fcMI ~ hh »Examples 1 ~ 5 A 4-inch silicon crystal with a natural oxide film was immersed in the polystyrene latex standard particles with a particle size of about 0.6« · in 0.5¾ HF aqueous solution so that the number of particles became 10s / · 1, and further added various surface active agents shown in Table 1 to the prepared treatment liquid for 10 minutes. After that, the ultra-pure water was washed and dried, and the number of particles attached to the surface of the silicon crystal garden was determined by using a laser surface inspection device * (Kosumi Riko Engineering Co., Ltd. made LS-5000). The results are shown in the table. 1. The number of attached particles in Table 1 is M-treated on each of the two silicon wafers, and the average value of M 2 wafers is recorded. (Please read the precautions on the back before filling out this page) Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs This paper is sized for China National Standards (CNS) Α4 (210X297 mm) 6 38600
A B 五、發明説明（7 ) 表1 經濟部中央樣準局員工消費合作社印製 界面活性繭 0.5*HF 50»HF 濃度 附蓍粒子數 消泡性 灞度 溶解性 (ρρ·) (fi/wafer) (ρρ·) 1 Ci2H2sPh(S〇3H)OPh(S〇3H) 0.1 120 〇 10 0 2 同上 1 180 0 100 〇 實 m 3 同上 2 180 〇 200 0 例 4 C9Hi9PhO(CH2CH2〇)4S〇3Ha 1 110 〇 100 〇 5 CaHisPhO(CH2CH2O)6SO3HH4 1 230 〇 100 〇 1 未添加 0 6000 — 0 一 2 Ci2H25PhS〇3Ha 1 1300 〇 100 〇 比 較 3 同上 200 72 X 20000 X 例 4 Ci2H25〇S〇3Na 1 4000 〇 100 〇 5 Cl2H25N(CH2CH2〇H)2 1 6000 〇 100 〇 (請先閱讀背面之注意事項再填寫本頁) 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 7 38 600 A7 B7_ 五、發明説明（8 ) 奮撫俐β〜g舟Hhgfflfi〜9 將附有自然氧化膜之4英吋矽晶圔S入添加有粒徑約 0.6« 之聚笨乙烯乳膠標準粒子於稀氫飆酸過氧化氪水溶 液[0(0.5¾ )-H2〇2(l〇x )-H2〇]中使微粒子數成為105個 /1,進一步添加表2所示之各種界面活性劑而調合成的處 理液之中10分鏟。其後以超純水淸洗並予乾燥後，使用雷 射表面檢査装置（LS-5000)测定附.著於矽晶圆表面上之微 粒子數，结果示於表2。表2之附著粒子數係對各工片矽晶 園予Μ處理，M2片之平均值記載之。 (請先閲讀背面之注意事項再填寫本頁) 裝. 訂 經濟部中央標準局貝工消费合作社印製 38600 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） A7B7 五、發明説明（9 ) 表2 經濟部中央標準局員工消費合作社印裝 界面活性Μ HF (0.5 «) -H2O2 (10 ac) -H2O 50*HF m度 附著粒子數 消泡性 灌度 溶解性 (ΡΡ·) (思/vafer) (ρρ·) 寶旛例 6 Ci2H2ePh(S〇3H)OPh(S〇3H) 0.5 840 〇 50 〇 7 同上 1 660 〇 100 〇 8 CsH19Ph0(CH2CH2O)4S0sNa 1 950 0 100 0 9 CeHisphO(CH2CH2O)6SO3HH4 1 800 0 100 〇 比較例 6 未添加 0 4000 — 0 一 7 Ci2H2sPhS〇3Na 1 1900 0 100 .〇 8 Ci2H25〇S〇3Ka 1 4500 〇 100 0 9 Cl2H2SN(CH2CH2〇H)2 1 >10000 〇 100 0 (請先閲讀背面之注意事項再填寫本莧) 本紙張尺度適用中國國家樣準（CNS ) A4規格（210X297公釐） 38600 A7 B7 五、發明説明（1 〇 ) 奮嫌俐10〜11¾ hh<»相Mfl〜13 將附有自然氧化膜之4英吋矽晶圄浸入添加有粒徑 0.6m 之聚苯乙烯乳膠欏準粒子於氫氟酸硝酸水溶液[( 1劣）-Η N 0 3 ( 5 * ) - Η 2 0 ]中使微粒子數成為1 0 5涸/ 1 ,進 步添加表3所示之各種界面活性《而調配成的處理液之 10分鏞。其後以超純水淸洗並予乾嫌後，使用笛射表面 査装置（LS-5000 )测定附著於矽晶圓表面上之撖粒子數 结果示於表3。表3之附著粒子數係對各2片矽晶圆予Μ 理，以2Η之平均值記«之。 表3 界面活性_ HF(l«)-HH〇3(5*)-H2〇 50¾ HF 潇度 附著粒子數 消泡性 濃度 溶解性 (ρρβ) (個/wafer) (PP 丨） 實施例 10 Ci2H25Ph(S〇3H)OPh(S〇3H) 1 2800 Ο 100 〇 11 C9Hi9PhO(CH2CH2〇)4S〇3Na 1 1900 〇 100 〇 比較例 10 未添加 0 7800 — 0 一 11 Ci2H25PhS〇3Na 1 8900 0 100 0 12 Ci2H25〇S〇3Na 1 6600 〇 100 〇 13 Cl2H2sH(CH2CH2〇H)2 1 6400 〇 100 〇 本紙張尺度通用中國國家標準（CNS ) Λ4規格（210Χ297公釐） 38 600 約F 一中檢，處 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 10 經濟部中央橾準局員工消費合作社印製 Μ Β7 五、發明説明（11 ) 啻MR俐12〜14¾ hh»例14〜17 將附有自然氣化膜之4英时矽晶園浸入添加有粒徑 0.6/U 之聚笨乙烯乳膠禰準粒子於經鑀衡的氲氟酸水溶 [HF(6?« )-NH4F(30« )-H2〇]中使微粒子數成為 105 個 / ·1 進一步添加表4所示之各種界面活性麇而調配成的《理 之中10分鐘。其後Μ超純水清洗並予乾嫌後使用雷射表 檢査装置（LS-500 0 )測定附著於矽晶圓表面上之激粒子 ，结果示於表4。表4之附著粒子數係對各2片矽晶圓予 處理，以2片之平均值記載之。 表4 界面活性_ HF(6s〇-HH4F(30»〇-H2〇 50*HF m度 附著粒子數 消泡性 壤度 溶解性 (ρρ·) (傾/wafer) (ρρ·) 實施例 12 Ci2H25Ph(S〇3H)OPh(S〇3H) 1 1300 〇 8.3 0 13 同上 10 1100 〇 83 〇 14 CsHιθΡΗΟ(CH2CH2O)4S〇3Ka 10 600 〇 83 0 比較例 14 未添加 0 4000 — 0 — 15 Ci2H25PhS〇3Na 1 3900 0 8.3 〇 16 Ci2H25〇S〇3Na 1 4200 〇 8.3 〇 17 Cl2H25N(CH2CH2〇H)2 1 5800 〇 8.3 〇 11 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X 297公釐） 38600 d' n I n I i I I 1. .-衣— I (請先閲讀背面之注意事項再填寫本頁) 訂 A7 B7 五、發明説明（12 ) 宭_ί俐1 R » fch »例1 8〜2 1 將附有自然氧化臑之4英吋矽晶圖浸入添加有粒徑 0.6 之聚苯乙烯乳膠擁準粒子於埴酸通氧化蠹水溶液 HC1(36« )=H2〇2(3〇x ): H2〇 = l:l:6(容量比）]中使微粒 数成為105傾/·1 ，進一步添加表5所示之各種界面活性 而諝合成的處理液之中10分鐘，其後Μ超纯水澝洗，Μ 0 . 5 % HF去除自然氧化贓，再Μ超纯水淸洗並予乾嫌後， 使用雷射表面檢査装置（LS- 5000 )测定附蕃於矽晶圃表 上之微粒子數，结果示於表5。表5之附著粒子數係對各 次矽晶圚予Κ處理，以2片之平均值記載之。 表5 的 子晒 面 2 經濟部智慧財產局員工消費合作社印製 界面活性劑 HC1 (36¾ ) ：H2〇2(30« ) ：H2〇 =1:1:6(容量比） 濃度 (ΡΡ·) 附著粒子數 (fi/vafer) 消泡性 實旆例 15 Ci2H25Ph(S〇3H)OPh(S〇3H) 1 710 0 比較例 18 未添加 0 4100 一 19 Ci2H25PhS〇3Na 1 8900 0 20 C i2H25〇S〇3Ha 1 >10000 ο 21 Cl2H2SH(CH2CH2〇H)2 1 >10000 0 本紙張尺度適用中國國家樣準（CNS ) Μ規格（210X297公釐） /1,. (請先閱讀背面之注意Ϋ項再填寫本頁 -裝· ,1Τ « 1^1 In In 12 38600 __B7_ 五、發明説明（13 ) 謇撫 fch»M?.2〜25 (請先閲讀背面之注意事項再填寫本頁) 將附有膜厚1〇〇η·之Si3N4膜之5英吋矽晶圆浸人加熱 至150t之添加有粒徑約0.6/ζ·之聚苯乙烯乳膠檷準粒子 於85重量*11釙〇4溶液中使微粒子數成為105個/·1 ,進一 步添加表6所示之各種界面活性繭而調合成的處理液之中 10分鐘。其後Μ超纯水淸洗並予乾煉後，使用雷射表面檢 査装置（LS- 5000 )测定附著於矽晶圓表面上之激粒子數， 结果示於表6。表6之附著粒子數係對各2片矽晶圓予以處 理，以2片之平均值記戰之。 表6 界面活性蘭 85¾ H3P〇4(l5〇r ) 濃度 附著粒子數 消泡性 (ρρ·) (個/wafer) 實施例 16 Ci2H2sPh(S〇3H)OPh(S〇3H) 1 3200 〇 比較例 22 未添加 0 8000 — 23 Ci2H2sPhS〇3Na 1 >10000 〇 24 C i2H25〇S〇3Na 1 >10000 〇 25 Cl2H25N(CH2CH2〇H)2 1 >10000 〇 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 經濟部智慧財產局員工消費合作社印製 13 3 860 0AB V. Description of the invention (7) Table 1 Printed interface active cocoon 0.5 * HF 50 »HF concentration by the Consumer Cooperatives of the Central Bureau of Standards, Ministry of Economic Affairs, concentration, number of particles, defoaming property, solubility (ρρ ·) (fi / wafer ) (ρρ ·) 1 Ci2H2sPh (S〇3H) OPh (S〇3H) 0.1 120 〇 10 0 2 Ibid 1 180 0 100 〇 Real m 3 Ibid 2 180 〇 200 0 Example 4 C9Hi9PhO (CH2CH2〇) 4S〇3Ha 1 110 〇100 〇5 CaHisPhO (CH2CH2O) 6SO3HH4 1 230 〇100 〇1 Unadded 0 6000 — 0 2 Ci2H25PhS〇3Ha 1 1300 〇100 〇Compare 3 Same as above 200 72 X 20000 X Example 4 Ci2H25〇S〇3Na 1 4000 〇 100 〇5 Cl2H25N (CH2CH2〇H) 2 1 6000 〇100 〇 (Please read the notes on the back before filling this page) The size of the paper is applicable to China National Standard (CNS) A4 (210X297 mm) 7 38 600 A7 B7_ V. Description of the invention (8) Fen Fu Li β ~ g boat Hhgfflfi ~ 9 Put 4 inch silicon crystals with natural oxide film into the polystyrene latex standard particles with a particle diameter of about 0.6 «in dilute hydrogen Aqueous acid osmium peroxide solution [0 (0.5¾) -H2〇2 ( l0x) -H2O] to make the number of fine particles 105 to / 1, and further added various surfactants shown in Table 2 to prepare a treatment solution prepared by 10 minutes. After washing with ultrapure water and drying, the number of micro particles attached to the surface of the silicon wafer was measured using a laser surface inspection device (LS-5000). The results are shown in Table 2. The number of attached particles in Table 2 is M-processed on each silicon wafer, and the average value of M2 wafers is recorded. (Please read the precautions on the back before filling in this page) Binding. Ordered by the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Bayer Consumer Cooperative, 38600 This paper size applies to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) A7B7 V. Description of the invention (9) Table 2 Printed interface activity of employees' cooperatives in the Central Standards Bureau of the Ministry of Economic Affairs HF (0.5 «) -H2O2 (10 ac) -H2O 50 * HF m degree attached particles number defoaming potency solubility (PP ·) (Think / vafer) (ρρ ·) Breguet Example 6 Ci2H2ePh (S〇3H) OPh (S〇3H) 0.5 840 〇50 〇7 Ibid 1 660 〇100 〇8 CsH19Ph0 (CH2CH2O) 4S0sNa 1 950 0 100 0 9 CeHisphO (CH2CH2O) 6SO3HH4 1 800 0 100 〇 Comparative Example 6 Not added 0 4000 — 0-7 Ci2H2sPhS〇3Na 1 1900 0 100 .〇8 Ci2H25〇S〇3Ka 1 4500 〇100 0 9 Cl2H2SN (CH2CH2〇H) 2 1 > 10000 〇100 0 (Please read the notes on the back before filling in this card) This paper size is applicable to China National Standard (CNS) A4 specification (210X297mm) 38600 A7 B7 V. Description of invention (1 〇) 10 ~ 11¾ hh < »phase Mfl ~ 13 4 inch silicon with natural oxide film Crystal 圄 was immersed in polystyrene latex 椤 quasi-particles with a particle diameter of 0.6 m added to a hydrofluoric acid nitric acid aqueous solution ((1 inferior)-Η N 0 3 (5 *)-Η 2 0] to make the number of particles 1 0 5涸 / 1, progressively add various interface activities shown in Table 3 (10 points of the prepared treatment solution). After washing with ultrapure water and drying it, the number of tritium particles adhering to the surface of the silicon wafer was measured using a flute surface inspection device (LS-5000). The results are shown in Table 3. The number of adhered particles in Table 3 is calculated for each of the two silicon wafers, and the average value of 2Η is used as «. Table 3 Interfacial activity_ HF (l «)-HH〇3 (5 *)-H2〇50¾ HF Number of attached particles Defoaming concentration Solubility (ρρβ) (a / wafer) (PP 丨) Example 10 Ci2H25Ph (S〇3H) OPh (S〇3H) 1 2800 〇 100 〇11 C9Hi9PhO (CH2CH2〇) 4S〇3Na 1 1900 〇100 〇 Comparative Example 10 Not added 0 7800 — 0-11 Ci2H25PhS〇3Na 1 8900 0 100 0 12 Ci2H25〇S〇3Na 1 6600 〇100 〇13 Cl2H2sH (CH2CH2〇H) 2 1 6400 〇100 〇 This paper size is the general Chinese National Standard (CNS) Λ4 specification (210 × 297 mm) 38 600 Approx. Please read the notes on the back before filling in this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 10 Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economics Β7 V. Description of the Invention (11) 啻 MR 12 ~ 14¾ hh »Examples 14 ~ 17 A 4-inch silicon crystal garden with a natural gasification film was immersed in a polystyrene emulsion latex with a particle size of 0.6 / U. The quasi-particles were dissolved in a balanced solution of hydrofluoric acid [HF (6?« ) -NH4F (30 «) -H2〇] so that the number of particles is 105 particles / · 1 Further various interface activities shown in Table 4 are added. The prepared "10 minutes." Thereafter, the ultra-pure water was washed and dried, and the laser particle inspection device (LS-500 0) was used to measure the excited particles attached to the surface of the silicon wafer. The results are shown in Table 4. The number of attached particles in Table 4 is pre-treated for each of the two silicon wafers, and is recorded as the average of the two silicon wafers. Table 4 Interfacial activity_HF (6s〇-HH4F (30 »〇-H2050 * HF m degree attached particle number Defoaming soil solubility (ρρ ·) (tilt / wafer) (ρρ ·) Example 12 Ci2H25Ph (S〇3H) OPh (S〇3H) 1 1300 〇8.3 0 13 Ibid. 10 1100 〇83 〇14 CsHθθ (Η2 (CH2CH2O) 4S〇3Ka 10 600 〇83 0 Comparative Example 14 No addition 0 4000 — 0 — 15 Ci2H25PhS〇3Na 1 3900 0 8.3 〇16 Ci2H25〇S〇3Na 1 4200 〇8.3 〇17 Cl2H25N (CH2CH2〇H) 2 1 5800 〇8.3 〇11 This paper size applies to Chinese National Standard (CNS) Λ4 size (210X 297 mm) 38600 d 'n I n I i II 1. .- 衣 — I (Please read the precautions on the back before filling this page) Order A7 B7 V. Description of the invention (12) 宭 _ί 莉 1 R »fch» Example 1 8 ~ 2 1 Immerse a 4-inch silicon crystal pattern with natural hafnium oxide into a polystyrene latex quasi-particles with a particle size of 0.6 in an aqueous solution of hafnium oxide HC1 (36 «) = H2〇2 (3〇x) : H2〇 = l: 1: 6 (capacity ratio)] so that the number of particles is 105 p / l, and various interface activities shown in Table 5 are further added to synthesize the treatment solution for 10 minutes, and thereafter Rinse with Μ ultrapure water, remove 0.5% HF from natural oxides, rinse with ume ultrapure water and dry it, and then use a laser surface inspection device (LS-5000) to measure the surface attached to the silicon crystal garden. The results of the number of fine particles are shown in Table 5. The number of attached particles in Table 5 is based on the silicon treatment of each time, and the average value of 2 pieces is recorded. Consumer co-operative printed surface active agent HC1 (36¾): H2〇2 (30 «): H2〇 = 1: 1: 6 (capacity ratio) Concentration (PP ·) Number of attached particles (fi / vafer) Defoaming properties Example 15 Ci2H25Ph (S〇3H) OPh (S〇3H) 1 710 0 Comparative Example 18 Not added 0 4100-19 Ci2H25PhS〇3Na 1 8900 0 20 C i2H25〇S〇3Ha 1 > 10000 ο 21 Cl2H2SH (CH2CH2〇H ) 2 1 > 10000 0 This paper size applies to China National Standards (CNS) M specifications (210X297mm) / 1 ,. (Please read the note on the back before filling out this page-Pack ·, 1T «1 ^ 1 In In 12 38600 __B7_ V. Description of the invention (13) 謇 stroke fch »M ?. 2 ~ 25 (Please read the precautions on the back before filling in this page) Si3N4 with a film thickness of 100 ％ A 5 inch silicon wafer was immersed and heated to 150t, and a polystyrene latex with a particle size of about 0.6 / ζ · was added to the quasi-particles in a solution of 85 weight * 11 钋 04 to make the number of particles to 105 / · 1, Various interface-active cocoons shown in Table 6 were further added to prepare the treated solution for 10 minutes. Thereafter, the ultra-pure water was rinsed and dried, and the number of laser particles attached to the surface of the silicon wafer was measured using a laser surface inspection device (LS-5000). The results are shown in Table 6. The number of attached particles in Table 6 is processed for each of the two silicon wafers, and the average value of the two silicon wafers is recorded. Table 6 Interfacial active blue 85¾ H3PO4 (15〇r) Concentration Number of attached particles Defoaming property (ρρ ·) (a / wafer) Example 16 Ci2H2sPh (S〇3H) OPh (S〇3H) 1 3200 〇 Comparative example 22 Not added 0 8000 — 23 Ci2H2sPhS〇3Na 1 > 10000 〇24 C i2H25〇S〇3Na 1 > 10000 〇25 Cl2H25N (CH2CH2〇H) 2 1 > 10000 〇 This paper size applies Chinese National Standard (CNS) Α4 size (210X297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 13 3 860 0
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五ί意日4^5月〜22』比較例26〜2Q (請先閱讀背面之注意事項再填寫本頁) 將巳去除自然氧化膜之4英时矽晶圓及附有热氧化臃 之4英时晶圃浸入添加有粒徑約〇.6ιζ·之聚苯乙烯乳謬檷 準粒子於鵬钱邊氧化氩水溶液（[HDCH2CH2H (CH3)3 + ]0H-( 0.1* >-Η2〇2(2κ )-H2〇](60 〜70t!)中使微粒子數成為 1〇5 俪/ ·1,進一步添加表7所示之各種界面活性劑而調合成的 處理液中1〇分鐘。其後Μ超纯水淸洗並予乾嫌後使用雷射 表面檢査装置（LS- 5000 )澜定附著於矽晶圃表面上之微粒 子数，结果示於表7。表7之附蓍粒子數係各3片晶圆予以 處理，Κ3片之平均值Ε載之。 表7 經濟部智慧財產局員工消費合作社印製"Five Italian Days 4 ^ May ~ 22" Comparative Example 26 ~ 2Q (Please read the precautions on the back before filling in this page) The 4 inch silicon wafer with natural oxide film removed and the 4 with thermal oxide Yingshijingpu was immersed in a polystyrene emulsion quasi-particles with a particle size of about 0.6 μm. Yu Pengqian edge argon oxide aqueous solution ([HDCH2CH2H (CH3) 3 +] 0H- (0.1 * > -Η2〇2 (2κ) -H2〇] (60 ~ 70t!) To adjust the number of fine particles to 105 俪 / · 1, and further add various surfactants shown in Table 7 to prepare a treated solution for 10 minutes. The number of fine particles attached to the surface of the silicon crystal garden was determined using a laser surface inspection device (LS-5000) after washing and drying with Μ ultrapure water. The results are shown in Table 7. The numbers of attached particles in Table 7 are each Three wafers were processed, and the average value of κ3 is listed in Table 7. Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs
界面活性繭 濃度 (ppa) 晶圖表面 附著粒子數 (傾/wafer) 濟泡性 17 Ci2H25Ph (S〇3H)OPh(S〇3H) 1 矽 100 〇 18 Ci2H2sPh(S〇3H)OPh(S〇3H) 5 矽 35 0 實 19 Ci2H2sPh(S〇3H)OPh (SOsH) 10 砂 7 0 施 20 Ci2H2sPh(S〇3H)0Ph(S03H) 1 熱氧化膜 0 〇 例 21 Ci2H25Ph(S〇3H)OPh(S〇3H) 5 熱氧化膜 0 〇 22 Ci2H25Ph(S〇3H)OPh(S〇3H) 10 热氧化膜 0 0 26 未添加 0 矽 210 一 比 27 未添加 0 热氧化膜 29 一 較 28 Cl2H2SH(CH2CH2〇H)2 300 矽 6900 X 例 29 Cl2H2sH(CH2CH2〇H)2 300 熱氣化膜 2000 X 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） 14 38600 A7 B7 五、發明説明“） 塞瀵h夕泡丨用儒倌 化的度及圆著產 细效濃管晶附高 微有高保止面提 之時於 、防表可 件形含異可HI故 元情包優亦晶 ， β 之劑性時 ，少 導理性解度又減 半處活溶濃 。而 於刻面 、低越液 應蝕界题成優理 對或的問釋用處 係淨定泡稀作之 ，洙特起使染明 液行使成即污發 理進係形時的本 處式 ，致用起用 圖湄液不使引使 晶以理亦且子於 之 ，處 ， 、粒由 明化之内离微數 發«明酸率於子 本積發氟效由粒 高本氫蓮面微 。 、 。之搬表的率 ^n- nn n^i HI I «1^— I*,cr^ —^n nt i I^n 1^1 ^ J. \ 为 、va /\ (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 15 38600Interfacial active cocoon concentration (ppa) Number of particles attached to the surface of the crystal (tilt / wafer) Foaming property 17 Ci2H25Ph (S〇3H) OPh (S〇3H) 1 Silicon 100 〇18 Ci2H2sPh (S〇3H) OPh (S〇3H ) 5 Silicon 35 0 Solid 19 Ci2H2sPh (S〇3H) OPh (SOsH) 10 Sand 7 0 Application 20 Ci2H2sPh (S〇3H) 0Ph (S03H) 1 Thermal oxide film 0 〇 Example 21 Ci2H25Ph (S〇3H) OPh (S 〇3H) 5 Thermal oxidation film 0 〇22 Ci2H25Ph (S〇3H) OPh (S〇3H) 10 Thermal oxidation film 0 0 26 Not added 0 Silicon 210 One to 27 Not added 0 Thermal oxide film 29 One 28 Cl2H2SH (CH2CH2 〇H) 2 300 Silicon 6900 X Example 29 Cl2H2sH (CH2CH2〇H) 2 300 Thermal vaporization film 2000 X This paper is applicable to China National Standard (CNS) A4 (210X297 mm) 14 38600 A7 B7 V. Description of the invention " ） 瀵 夕 xi bubble 丨 use the degree of Confucianism and round production to produce fine-effect thick tube crystals attached to the high micro-surface with high security, when the surface can be different from the shape can be different, HI, so it is good and good. When the dosage of β is less, the solution with less conductance is reduced by half and the concentration of active solution is reduced by half. However, the interpretation of the problem of solving the problem in the facet and low-evaporation erosive world is called net-diffusion dilute. Cause to dye The liquid form is the local formula when the hair is put into the system, and the use of the liquid is not to cause the crystal and the child to be in it. The acid rate in the child's accumulated fluoride effect is slightly higher than that of the hydroponic noodles.... ^ N- nn n ^ i HI I «1 ^ — I *, cr ^ — ^ n nt i I ^ n 1 ^ 1 ^ J. \ Wei, va / \ (Please read the notes on the back before filling in this page) Printed on the paper by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, China Paper Standard Applicable to China National Standard (CNS) Α4 Specification (210X297 mm) ) 15 38600