B7 五、發明說明（/) 發明領域： 本發明是關於一種半導體積體電路中對準標記 (Photolithography alignment mark)之製作方式’特別是解決 在製作同一晶圓上之電路圖案時，不同層電路圖案使用不 同對準方式曝光機(stepper)進行曝光，其間之圖形叠對問 .... 冊 冊 ··.· .... - — - - _+ —— 題。 發明背景： 在積體電路(1C)的製作中，係利用微影的技術將所設計 之電路佈局(layout)的光罩圖案轉移到半導體晶圓上。由於 電路佈局中有許多不同的層次，如何將每一層次中的圖 案，正確無誤地曝光在所設計的地域。普遍係在曝光時， 藉由對準記號(alignment mark)將不同層之電路圖案對準， 才能將所設計於不同層次的電路連接起來。目前商業化常 使用之重複曝光機(stepper)的對準方式，一共有兩種，如圖 —及圖二所示。 一種是如圖一所示，其主要係在晶圓兩側各放一個對 準標記6 (圖中的十字圖形），如ASML公司即使用此法， 所以以下敘述均簡稱爲ASML法，ASML法的優點是每片晶 圓(wafer)上，僅需對準兩個具對稱之對準標記(Global Photolithographic Alignment Mark)，因對準記號大，在對準 時所產生之對準訊號較強，其對準之準確性高，可節省對 準所費之時間，提高生產線的產能(output)，但其缺點爲： 需針對產品，多做一道第零層(Zero layer)的光罩，每次對準 時需依據第零層光罩之對準記號進行對準，且記號所佔空 2 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 靖先閲讀背面之3.--<w#>項再填寫本頁： ·1111111 1111111 雉濟部智慧財產局貝工消费合作社印製 經濟部智慧財產局員工消费合作社印製 A7 _B7___ 五、發明說明) 間大，如此則將會增加生產成本。另一種則是如圖二所 示，將對準標記8放置在每一晶粒(die)之間的通道上，此種 方法係被日本Nikon公司所採用，因此以下敘述均簡稱爲 Nikon法，Nikon法係在每一層薄膜上晶粒間的通道上形成 對準記琴，Nikon法的優點是不需在晶片上空出特定大小來 放置對準記號，如此可增加晶片可利用之表面&，但相對 的其缺點是：需花費較長的時間量測每個對準標記8區域取 其平均位置來對準[對準記號數目多且對準時所產生之訊號 弱]，如此則會降低了生產線的產能，而且每一層次必須經 .由蝕刻(etching)的過程產生供下一層之對準標記8，否則以 後的層次將無對準標記可供微影過程中對準之用，其次， 由於對準記號很小，故量測不易，易造成對準誤差。 由於半導體之元件之金屬連線的尺寸和操作電壓 (control voltage)持續下降和元件密度持續增加，而金屬連線 的尺寸係由微影步驟所控制，因此，每個半導體廠需不斷 的降低微影製程時之曝光線寬；在改進微影製程中，許多 的製程條件及製程中所需運用的機台和材料也需隨之改 變，因此，半導體廠中的設備無法長期使用，常常面臨著 更換製程設備和條件的問題，如此，使得半導體製程上需 增加設備及人力資源。但事實上，半導體製程中並非每個 半導體元件的尺寸要求皆需悬小線寬耍求，涌常僅有1-2層 之尺寸要求需符合最小線寬要求，而其它層次之線寬要求 並非如此嚴格，若能僅在金屬連線中線寬要求嚴謹處使用 最新的曝光機台進行曝光，而其他之製程持續使用原舊有 _______3_ 本紙張尺度適用中S國家標準（CNS)A4規格（210 X 297公釐） <請先閱讀背面之項再填寫本頁) · ·1 1 H ϋ I* 1^eJI Ml M—w n A7 B7 五、發明說明（令） 之製程條件及機台設備，如此’可大大降低廠中之設備成 本及人力資源。 (請先《讀背面灸注意事項再填寫本頁) 但在使用不同機台上進行微影步驟時，不同機台所使 用之對準方式可能不同，如果無法解決不同機台所使用之 對準方式不同之問題，便無法使舊有曝光機台與最新機台 ................................-------------- ------ -------------------------------------------------------------------------------------.-------------------- __ _ ~ * 經濟邨智慧財產局貝工消费合作社印製 混合使用以降低製程之設備成本及人力資源。例如前段製 程中係使用Nikon對準標記以配合Nikon曝光機之曝光製 程；倘若，在改進或後段製程中，需另使用ASML曝光機之 曝光製程，此時，由於ASML曝光機與Nikon曝光機的對準 方式不同，使用不同曝光機所製造之電路無法連接起來。 因此，在習知技術之半導體製程時，需遷就曝光機之對準 方式而必須使全部之半導體製程皆使用同一種曝光機進行 曝光，如此，影響到半導體製程上之機動性。此外，當半 導體製程中，對於某些已製作部份半導體元件之晶圓，欲 轉接於其他廠商製作接續製程時，由於對準方式不同，而 無法承續，需找尋有相同對準方式的曝光機台之製作廠商 才能有辦法接續製程。本發明可提供新的對準標記設計， 使晶圓不受原曝光機所用之對準標記之限定，可隨製程需 要選擇不同之曝光機使用可減低製程成本，並增加製程之 機動性。 發明之槪述： 4 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐) 五、發明說明（ 本發明之主要目的爲提供一種解決不同對準方式之曝 光機間圖形疊對問題之方法，在同一半導體元件中可容許 使用不同對準方式之曝光機台進行不同層之電路製作。 本發明之另一目的爲提供一種解決不同對準方式之曝 光機間圖形疊對問題之友法，电聆可遮里不同對里標記之 機台來進行電路元件之製作，因此，在增加機台使用機動 性的同時，可減低機台之淘汰率，如此可提供降低生產成 本。 經濟部智慧財產局貝工消费合作社印數 首先，沈積金屬層於含有內連線結構及Nikon對準標記 之基板上，在上述之金屬層上旋塗一光阻，接續，使用光 罩進行曝光以定義出金屬圖案，而上述之光罩上含有Nikon 對準標記與基板上之Nikon對準標記進行對準，如此製作之 金屬圖案才能與基板上之內連線結構相配合，與習知不同 處在於：另加入一光罩於上述之金屬層曝光，在預定金屬 層空出之空間上，定義出ASML對準標記位置，接下來才進 行習知之微影、蝕刻步驟於上述之金屬層中，形成金屬圖 案、Nikon對準標記與ASML對準標記位置，如此，上述基 板上多出的新生異於上述曝光機台之光罩標記圖案，以利 於與上述曝光機台不同之另一曝光機台間應用於同一基板 上。 圖示簡要說明： 圖一爲積體電路ASML法對準標記配置方式之示意圖。 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 五、發明說明（/ ) 圖二爲； 圖。 A7 B7 :路Nikon法對準標記之配置方式之示意 圖三爲本發明第一實施例與第二實施例中對準標記之配 置方式之示意圖。 圖號說明丄___________________________________ ____________________.... ----------------------------- ----------------------------------- 6-對準標記 8挪標記 10-基板 發明詳細說明： 若在製作半導體元件時’其使用對準記號進行每層電 路圖案之對準，但在製程中爲減低製程成本’欲使用不同 曝光機台進行同一元件上不同層之電路製作’而上述之不 同之曝光機台係使用不同之對準方式’本發明即可應用於 此種情況下，令使用Nikon曝光機台所製作之半導體元件， 可繼續使用ASML曝光機台繼續進行電路圖案製作，使半導 體製作能更具機動性。本發明係將利用兩個實施例：第一 實施例一多層金屬連線之製作及第二實施例-完成光電能 量轉換器後之彩色濾光鏡製作；在此兩個實施例中，前段 製程係使用Nikon曝光機台，而後段製程則使用ASML曝光 機台爲例，來闡述本發明之技術手段，在本發明之實施例 僅使用十字符號作爲ASML及Nikon對準標記圖案的示意。 第一實施例 在使曝光機台用Nikon曝光機台進行電路圖案製作後， 若欲轉換ASML曝光機台進行下一層之電路製作，需在最後 6 、 ·\*ί. 111 — — — — ^» — — ·1111111 I I I I I <請先《讀背面之1意事項再填寫本頁)__ -B7 V. Description of the Invention (/) Field of the Invention: The present invention relates to a method of making a photolithography alignment mark in a semiconductor integrated circuit. In particular, it solves the problem of different layers of circuits when making circuit patterns on the same wafer. The pattern is exposed by using different stepper exposure machines, and the graphics are interspersed with each other .... Booklet ···· ...----_ + —— questions. BACKGROUND OF THE INVENTION: In the fabrication of integrated circuits (1C), a lithography technique is used to transfer a mask pattern of a designed circuit layout to a semiconductor wafer. Because there are many different levels in the circuit layout, how to correctly expose the patterns in each level to the designed area. Generally, when the circuit patterns of different layers are aligned by alignment marks during the exposure, the circuits designed at different levels can be connected. At present, there are two kinds of alignment methods for stepper in commercialization, as shown in Figure-and Figure 2. One is as shown in Figure 1. It mainly places an alignment mark 6 (cross pattern in the figure) on both sides of the wafer. This method is used by ASML companies, so the following descriptions are referred to as ASML method and ASML method. The advantage is that on each wafer, only two Global Photolithographic Alignment Marks need to be aligned. Because the alignment mark is large, the alignment signal generated during alignment is strong. The high accuracy of the alignment can save the time and cost of the alignment and increase the output of the production line. However, the disadvantages are as follows: It is necessary to make a zero-layer photomask for the product. Alignment is required on time according to the alignment mark of the zero-level mask, and the space occupied by the mark 2 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) < w # > Please fill in this page again: · 1111111 1111111 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Printed by the Shellfish Consumer Cooperative, Printed by the Ministry of Economic Affairs, the Intellectual Property Bureau, and printed by the Consumer Consumption Cooperative of A7 _B7___ V. Invention Description) Will increase production costs. The other is to place the alignment mark 8 on the channel between each die as shown in Figure 2. This method is adopted by Japan's Nikon Corporation, so the following descriptions are simply referred to as the Nikon method. The Nikon method is to form an alignment note on the channels between the grains on each layer of film. The advantage of the Nikon method is that there is no need to leave a specific size on the wafer to place the alignment mark. This can increase the available surface of the wafer &, However, the relative disadvantage is that it takes a long time to measure the average position of 8 areas of each alignment mark to align [the number of alignment marks is large and the signal generated during alignment is weak], which will reduce The capacity of the production line, and each level must pass. The alignment mark 8 for the next layer is generated by the etching process, otherwise the next level will have no alignment mark for alignment in the lithography process. Second, Because the alignment marks are small, it is not easy to measure, and it is easy to cause alignment errors. As the size and control voltage of the metal wiring of semiconductor components continue to decrease and the component density continues to increase, and the size of the metal wiring is controlled by the lithography step, each semiconductor factory must continuously reduce the micro Exposure line width during the film production process; in improving the lithography process, many process conditions and the equipment and materials used in the process also need to be changed accordingly. Therefore, the equipment in the semiconductor factory cannot be used for a long time and often faces The problem of changing process equipment and conditions, so that the equipment and human resources need to be increased in the semiconductor process. However, in fact, not all semiconductor device size requirements require small line widths in the semiconductor process. Often, the size requirements of only 1-2 layers must meet the minimum line width requirements, while the line width requirements of other levels are not If it is so strict, only the latest exposure machine can be used for exposure where the line width is strictly required in the middle of the metal connection, and other processes continue to use the original old _______3_ This paper standard applies to China National Standard (CNS) A4 specifications ( 210 X 297 mm) < Please read the items on the back before filling this page) · · 1 1 H ϋ I * 1 ^ eJI Ml M—wn A7 B7 V. Process conditions and equipment of the invention description (order) In this way, the equipment cost and human resources in the plant can be greatly reduced. (Please read the “Precautions for Back Moxibustion before filling out this page”) But when performing lithography steps on different machines, the alignment methods used by different machines may be different. If you cannot solve the different alignment methods used by different machines Problems, it is impossible to make the old exposure machine and the latest machine ........-- ----------- ------ --------------------------------- -------------------------------------------------- --.-------------------- __ _ ~ * Economic Village Intellectual Property Bureau Shellfish Consumer Cooperative Co., Ltd. prints and mixes them to reduce process equipment cost and human resources. For example, the Nikon alignment mark is used in the previous process to match the exposure process of the Nikon exposure machine; if the improvement or rear stage process requires the exposure process of the ASML exposure machine, at this time, due to the ASML exposure machine and the Nikon exposure machine The alignment methods are different, and the circuits manufactured by different exposure machines cannot be connected. Therefore, in the conventional semiconductor manufacturing process, the alignment method of the exposure machine needs to be changed and all semiconductor manufacturing processes must be exposed using the same exposure machine. This affects the mobility of the semiconductor manufacturing process. In addition, in the semiconductor manufacturing process, for some wafers that have already been manufactured with some semiconductor components, if they want to transfer to other manufacturers for the manufacturing process, the alignment methods are different and cannot be continued. Only manufacturers of exposure machines can have a way to continue the process. The invention can provide a new alignment mark design, so that the wafer is not limited by the alignment marks used by the original exposure machine, and different exposure machines can be selected according to the process requirements, which can reduce the process cost and increase the maneuverability of the process. Description of the invention: 4 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 5. Description of the invention (The main purpose of the invention is to provide a pattern overlay between exposure machines with different alignment methods. The method of the problem is to allow the use of different alignment methods for the fabrication of circuits of different layers in the same semiconductor device. Another object of the present invention is to provide a method for solving the problem of pattern overlap between exposure devices with different alignment methods. Youfa, electric listening can cover different pairs of marking machines to make circuit components. Therefore, while increasing the mobility of the machine, it can reduce the elimination rate of the machine, which can reduce production costs. Economy First, the Ministry of Intellectual Property Bureau, Shelley Consumer Cooperative Co., Ltd. First, a metal layer is deposited on a substrate containing an interconnect structure and a Nikon alignment mark, and a photoresist is spin-coated on the above metal layer. Then, a photomask is used for exposure to A metal pattern is defined, and the Nikon alignment mark on the mask described above is aligned with the Nikon alignment mark on the substrate. It can be matched with the interconnect structure on the substrate. It is different from the conventional one in that it adds a photomask to the above metal layer for exposure, and defines the position of the ASML alignment mark on the space vacated by the predetermined metal layer. Only then do the conventional lithography and etching steps in the above metal layer to form the metal pattern, the Nikon alignment mark and the ASML alignment mark position. In this way, the extra new life on the substrate is different from the photomask of the exposure machine. Marking pattern, to facilitate the application of another exposure machine different from the above exposure machine on the same substrate. Brief description of the figure: Figure 1 is a schematic diagram of the alignment mark arrangement method of the integrated circuit ASML method. 5 This paper size is applicable Chinese National Standard (CNS) A4 specification (210 X 297 mm) 5. Description of the invention (/) Figure 2 is; Figure A7 B7: Schematic diagram of the arrangement of alignment marks of the Nikon method 3 is the first embodiment of the present invention Schematic diagram of the arrangement of alignment marks in the second embodiment. Figure No. Explanation ___________________________________ ____________________.... ------------------------ ----- ----------- ------------------------ 6-alignment mark 8-shift mark 10-substrate invention detailed description: If it is used in the manufacture of semiconductor components, its alignment is used Mark the circuit pattern alignment of each layer, but in order to reduce the cost of the process, 'I want to use different exposure equipment for different layers of circuit fabrication on the same component', and the above different exposure equipment uses different alignment methods 'The present invention can be applied in such a case, so that the semiconductor elements produced using the Nikon exposure machine can continue to use ASML exposure machine to continue the circuit pattern production, so that the semiconductor production can be more mobile. The present invention will use two embodiments: the first embodiment-the production of a multilayer metal connection and the second embodiment-the production of a color filter after the photoelectric energy converter is completed; in these two embodiments, the previous paragraph The manufacturing process uses a Nikon exposure machine, and the latter process uses an ASML exposure machine as an example to illustrate the technical means of the present invention. In the embodiment of the present invention, only the cross symbol is used as an illustration of the ASML and Nikon alignment mark patterns. In the first embodiment, after the exposure machine is used to make a circuit pattern using a Nikon exposure machine, if the ASML exposure machine is to be used for the next layer of circuit production, it is necessary to use the last 6. »— — · 1111111 IIIII < Please read the first notice on the back before filling out this page) __-
C 經濟部智慧財產局貝工消费合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公* ) 經濟部智慧財產局員工消费合作社印製 A7 ____B7__ 五、發明說明（έ) 一層使用Nikon曝光機台時，在外加一光罩進行ASML的光 罩對準記號製作，使基板10上最上一層金屬層係含有兩種 對準圖案8及6(Nik〇n及ASML)，如圖三所示。因此，基板 i：最上一層金屬層在設計製作時，需空出製作ASML的對準 記號6空凰。_ . ------丽· _________________—— 其詳細情況如下所述，在製作”最後一層”以Nikon曝光 機台定義金屬圖案時，如同習知技術會在基板10上先沈積 一金屬層，接著進行微影步驟藉著光阻定義出金屬圖案， 此時會先旋塗一層光阻，並使用光罩及Nikon曝光機台進行 曝光，將光罩上的圖案「寫入」光阻中，接著與習知技術 中不同在於：爲了下一步需使用光罩及ASML曝光機台進行 曝光之故，在上述之最後一層以Nikon曝光機台定義金屬圖 案時’便留下ASML曝光機台對準之對準記號6之空間，此 面積小於0.35 M m X 0.35 u m，且需對稱存在，以Nikon曝光 機台定義完上述之”最後一層”金屬圖案，不接著進行顯影動 作’多加一道曝光步驟，但此次所使用之光罩圖案上僅有 ASML機台所使用之對準記號6，但由於上述之對準記號6因 不在晶粒間的通道上，因此對準記號6形成於上述金屬層所 預留之空間上，而對準記號6在一晶片上僅需兩個，且此對 準記號6對稱存在，使用僅有對準記號6之光罩曝光後，將 對準記號6「寫入」光阻中，在進行上述之曝光動作時，由 於光阻層下爲金屬層，因光阻厚度介於8000罕10000埃之 間_!_所以無駐波效應(standing wave effect)產生，如此可產 生形狀良好之對準記號6供後續對準。 _________7__ 本紙張尺度適用中國國家標準（cSs)A4規格（210 X 297 ) (請先M讀背面之注意事項再填寫本頁) Γ裝 n 1 emf ϋ^OJ i n tarn i · _____B7__;__- _____B7__;__- 五 發明說明（/ ) 接續才進行與習知技術中相同之步驟：顯影，將軟化 之光阻除去，並利用電漿蝕刻將光阻上之圖案刻畫至金屬 層上，如此，此金屬層上即有所設計之電路圖案、爲製作 最後一層電路圖案的Nikon對準記號8與下一層所使用之 ASML對準記號6 〇 第二實施例 裝 tr. 本發明亦可以第二實施例操作之，圖式中相同的圖號 代表與第一實施例相同之層次。前述之實施例爲本發明應 用於製作半導體元件中金屬層上製作對準記號，於第二實 施例中將以製作完光電能量轉換器區(optoelectro transducer region)後之護層上，製作對準記號以供後續 製作彩色濾光鏡(color filter)時對準之用來闡述本發明之技 術手段。 經濟部智慧財產局貝工消费合作社印製 在半導體製程中，習知製作光電能量轉換器及其他之 金屬連線係使用Nikon法對準方式，而在製作介電層上之彩 色濾光器等元件時係使用ASML機台之曝光機的對準方 式。如上所述，不同方式之對準記號使得製程無法接續， 首先，仍請參閱圖三所示，基板10已製作完光電能量轉換 器之基板10，上述之基板10上已有第一光罩對準標記8，接 續，爲保護上述之光電能量轉換器，因此需旋塗介電層於 所述之光電能量轉換器之上，上述之介電層係爲護層 (passivation)，使用氧化砂膜(silicon-oxide film)或使用電獎 增強化學氣相沈積法(plasma enhance chemical vapor 本紙張尺度適用中國困家標準（CNS)A4規格（210 X 297公釐） A7 _B7__ 五、發明説明（/ ) (請先鬩讀背面之注意事項再填寫本頁) deposition)所形成之氮化砍(PE Nitride)。接著使用光阻以定 義護層，在定義護層時，使用光罩及Nikon曝光機台來進行 曝光，將光罩上的護層圖案「寫入」光阻中，接著與習知 技術中不同在於：爲了下一步需使用光罩及ASML曝光機台 進行曝光之故，在上述之以Mkonm*«舎定義護屨圓案 時，需預留/SML曝光機台對準之對準記號6之空間，此厘 積小於0.35amX0.35脑，且需對稱存在，以Nikon曝光機 台定義完上述之護層圖案後，不接著進行顯影動作，多加 一道光罩曝光步驟，但此次所使用之光罩圖案上僅有ASML 機台所使用之對準記號6，將對準記號6「寫入」已有護層 圖案之光阻中之預留的對準記號6之空間。 接續才進行與習知技術中相同之步驟：顯影，將軟化 之光阻除去，並利用電漿飽刻將光阻上之圖案刻畫至護層 上’如此，此護層上即有所設計之護層圖案、爲製作護層 圖案的Nikon對準記號8與下一層所使用之ASML對準記號 6 〇 經濟部智慧財產局貝工消费合作社印製 本發明中在谁行不同曝光機台間夕對進標記之製作 前’對於不同曝光機台間之位移(shit)量，會專先使用一椁 擬試片(monitor wafer)作爲位移誤差之校TF，宑淮行對 記之製作時會將此位移量倂入考慮。 由本發明的第一與第二實施例中，可知本發明所提出 對準記號之形成具有下列之優點： 1.本發明可連結製程中，先以Ni+kcn對準記號作爲曝光 對準後’接著使用ASML對準記號作爲曝光對準，使 $紙張尺度適用中國國家揉準（CNS ) A4规格（210X297公釐） ' 五、發明説明（7 ) A7 B7 半導體元件製作能更具機動性，使機台使用更具機動 性。 2. 本發明所提供之ASML對準標記製作，可在任何半導 體元件之上(導電層及絕緣層上)實施，並只需多加一 魅罩職技麗，即可達到本發明之目的。—――——.. 3. 在不需改變習知製程中所使用的任何光罩設計下，僅 需多加一道含有對ASML準標記圖案之光罩，便可達 到本發明之目的。 以上所述係利用較佳實施例詳細說明本發明，而非限 制本發明之範圍，而且熟知半導體技藝的人士皆能明瞭， 適當而作些微的改變及調整，仍將不失本發明之要義所 在，亦不脫離本發明之精神和範圍。 (請先閲讀背面之 注意事項再填寫本頁) 經濟部智慧財產局員工消费合作社印製 jnC Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public *). Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, A7. ____B7__ 5. Description of the invention (Handled) When using a Nikon exposure machine for one layer, an ASML mask alignment mark is made on a mask, so that the uppermost metal layer on the substrate 10 contains two alignment patterns 8 and 6 (NikON and ASML), such as As shown in Figure 3. Therefore, the substrate i: when the top metal layer is designed and manufactured, the alignment mark 6 of the ASML should be vacated. _. ------ Li · _________________—— The details are as follows. When making the "last layer" to define a metal pattern with a Nikon exposure machine, a metal layer is first deposited on the substrate 10 as in conventional techniques. Then, the lithography step is used to define the metal pattern by the photoresist. At this time, a layer of photoresist is spin-coated, and the photomask and Nikon exposure machine are used for exposure. The pattern on the photomask is "written" into the photoresist. Then, it is different from the conventional technology in that in order to use a photomask and an ASML exposure machine for the next step, the ASML exposure machine pair is left when the metal pattern is defined by the Nikon exposure machine in the last layer above. Aligned to the space of mark 6, this area is less than 0.35 M m X 0.35 um, and it needs to exist symmetrically. Use the Nikon exposure machine to define the "last layer" metal pattern described above, and then do not perform the development action. Add an exposure step. However, the mask pattern used this time is only the alignment mark 6 used by the ASML machine. However, since the above-mentioned alignment mark 6 is not on the channel between the grains, the alignment mark 6 is formed on the above. On the space reserved by the metal layer, only two alignment marks 6 are needed on a wafer, and the alignment marks 6 exist symmetrically. After exposure using a mask with only the alignment marks 6, the alignment marks 6 will be exposed. In the "write" photoresistor, during the above-mentioned exposure operation, since the photoresist layer is a metal layer, the thickness of the photoresist is between 8000 and 10,000 Angstroms! So there is no standing wave effect. It is generated, so that a well-shaped alignment mark 6 can be generated for subsequent alignment. _________7__ This paper size applies Chinese National Standard (cSs) A4 specification (210 X 297) (Please read the notes on the back before filling this page) Γ 装 n 1 emf ϋ ^ OJ in tarn i · _____ B7 __; __- __B7__; __- Description of the five inventions (/) Only the same steps as in the conventional technology are carried out: development, removing the softened photoresist, and using plasma etching to trace the pattern on the photoresist to the metal layer. There is a circuit pattern designed on the layer, the Nikon alignment mark 8 for making the last layer circuit pattern and the ASML alignment mark 6 used in the next layer 〇 The second embodiment is equipped with tr. The present invention can also be operated in the second embodiment In other words, the same reference numerals in the drawings represent the same levels as in the first embodiment. The foregoing embodiment is used for making alignment marks on a metal layer in a semiconductor device. In the second embodiment, alignment is performed on a protective layer after the optoelectro transducer region is fabricated. The marks are used for explaining the technical means of the present invention when the color filters are subsequently aligned. The Intellectual Property Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative Co., Ltd. is printed in the semiconductor process. It is known to use the Nikon method to align the photoelectric energy converter and other metal connections, and color filters on the dielectric layer. The components are aligned with an exposure machine using an ASML machine. As mentioned above, the alignment marks in different ways make the process uncontinuable. First of all, please also refer to FIG. 3, the substrate 10 has finished the substrate 10 of the photoelectric energy converter, and the above substrate 10 has the first photomask pair. Quasi-marker 8, continued. In order to protect the above-mentioned photoelectric energy converter, a dielectric layer must be spin-coated on the above-mentioned photoelectric energy converter. The above-mentioned dielectric layer is a passivation and an oxide sand film is used. (silicon-oxide film) or the use of plasma enhanced chemical vapor deposition method (plasma enhance chemical vapor) This paper size is applicable to China Standards for Household Standards (CNS) A4 (210 X 297 mm) A7 _B7__ V. Description of the invention (/) (Please read the precautions on the reverse side before filling out this page) PE Nitride formed by deposition). Then use photoresist to define the protective layer. When defining the protective layer, use a photomask and Nikon exposure machine to perform exposure, and "write" the protective layer pattern on the photomask into the photoresist, which is different from the conventional technology. The reason is: in order to use a photomask and an ASML exposure machine for the next step, in order to define the protection circle with Mkonm * «舎, it is necessary to reserve the / SML exposure machine alignment mark 6 Space, this convolution is less than 0.35amX0.35 brain, and it needs to exist symmetrically. After the above protective layer pattern is defined with a Nikon exposure machine, the developing operation is not continued and an additional mask exposure step is added, but this time the The mask pattern has only the alignment mark 6 used by the ASML machine, and the alignment mark 6 "writes" the space reserved for the alignment mark 6 in the photoresist of the existing protective layer pattern. Then proceed with the same steps as in the conventional technology: develop, remove the softened photoresist, and use the plasma to saturate the pattern on the photoresist onto the protective layer. So, there is a design on this protective layer Protective layer pattern, Nikon alignment mark 8 for making the protective layer pattern, and ASML alignment mark 6 used for the next layer. 〇 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, who has different exposure machines in the present invention. Before the production of the alignment mark, for the amount of shift (shit) between different exposure machines, a monitor wafer will be used as the calibration TF of the displacement error. This amount of displacement is taken into account. From the first and second embodiments of the present invention, it can be known that the formation of the alignment mark proposed by the present invention has the following advantages: 1. In the connection process of the present invention, the Ni + kcn alignment mark is used as the exposure alignment first. Then use the ASML alignment mark as the exposure alignment, so that the $ paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). 5. Description of the invention (7) A7 B7 Semiconductor device manufacturing can be more mobile, so that Machine use is more mobile. 2. The ASML alignment mark provided by the present invention can be implemented on any semiconductor element (on the conductive layer and the insulating layer), and only needs to add a charm mask to achieve the purpose of the present invention. ————— .. 3. Without changing any reticle design used in the conventional manufacturing process, it is only necessary to add a reticle containing ASML quasi-marking pattern to achieve the purpose of the present invention. The above is a detailed description of the present invention using preferred embodiments, rather than limiting the scope of the present invention, and those skilled in the art of semiconductors will understand that appropriate changes and adjustments will still be made without departing from the spirit of the present invention. Without departing from the spirit and scope of the invention. (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs jn
— 1 J—·---- .^-^1 n —.1 一— —I — - - n n ^ I n n n ^ 1 n n I I n I I I IBH nn 本纸張尺度逍用中國國家橾準（CNS ) A4规格（210X297公釐〉— 1 J — · ----. ^-^ 1 n —.1— —I —--nn ^ I nnn ^ 1 nn II n III IBH nn This paper is based on China National Standards (CNS) A4 specification (210X297 mm>