4029twf.doc/006 A7 4029twf.doc/006 A7 經濟部中夾標淨局負工消费合作社印^ 五、發明説明（/ ) 本發明是有關於一種使半導體元件的表片平坦的裝置 與方法，且特別是有關於一種化學機械硏磨的裝置與方 法。 半導體製程技術中，表面平坦化是處理高密度微影的 一項重要技術，因沒有高低落差的平坦表面才能避免曝光 散射，而達成精密的圖案轉移（pattern transfer);爲了 使多重金屬內連線的製作較容易進行，且經轉移的導線圖 案較爲精確，因此如何使晶圓（wafer)高低起伏的表面加 以平坦化是非常重要的。此外，晶圓平坦化是影響對準系 統對準之準確度的主要因素，假若晶圓平坦化做不好，那 麼不僅對準系統無法準確地使光罩（mask)對準晶圓，更會 造成製程中的錯誤機會增加。 在平坦化的過程中，化學機械硏磨法是唯一能提供大 型半導體積體電路（Very Large Semiconductor Integration，VLSI)，甚至超大型半導體積體電路 (Ultra-LSI，ULSI)製程以達到全面性平坦化（Global P1 an a r 1 z a t i on)的一種技術。 CMP主要就是利用類似”磨刀”這種機械式硏磨的原 理，配合適當的化學助劑（reagent )，來把晶片表面高低 起伏不一的輪廓，一倂加以”磨平”的一種平坦化技術。在 化學機械硏磨製程中所使用的硏漿（Slurry)通常包括化學 活性組成（Chemically Active Component)比如酸或驗， 和機械活性（Mechanically Active)比如呈膠體狀 (colloidal)的砂土（silica)，或呈分散狀（dispersed)的 3 ---------3^------1T-------.^ *J . ("先間讀背而之注意事4#填寫本頁) 本紙張尺度適用中國國家標準（CNS ) Λ4规格（210X 297公犮） 4029twf .d〇c/006 A7 B7 五、發明説明（之） 銘土（alumina)之硏磨劑（Abrasive)。晶片的表面硏磨就 是利用欲去除的材質與硏漿中的化學活性組成反應，進一 步利用硏漿中硏磨性極高的硏磨劑進行機械性的硏磨。 請參照第1圖，其繪示爲一種傳統的化學機械硏磨裝 置之剖面圖。傳統的化學機械硏磨裝置包括有可旋轉的硏 磨台12，在硏磨台12上有一硏磨墊（Polishing Pad)14。 利用晶片承載器（Wafer Carrier)16負載晶片18，使晶片 18的表面朝下，將晶片18上欲被硏磨的一側與硏磨墊14 接觸，並利用一輸送管20將硏漿22輸入於硏磨墊14上， 接著旋轉硏磨台12以進行化學機械硏磨，將晶片18表面 凸出之沉積層一步一步除去。 傳統的化學機械硏磨製程分爲兩個階段，第一個階段 使用硬的硏磨墊進行硏磨，藉以增加晶圓的平坦度。第二 階段用軟的硏磨墊以及較小的壓力進行，藉以增加晶圓表 面的均勻度，此二階段分別在兩個硏磨台上進行。 進行化學機械硏磨的製程時，第一階段與第二階段的 硏磨所用的硏漿性質並不相同，兩種硏漿接觸時也容易因 爲反應產生不預期的顆粒，而污染晶片表面以及化學機械 硏磨裝置。所以，當晶片要由第一硏磨台移到第二硏磨台 進行第二階段的硏磨前，必須等到第一硏磨台與晶片承載 器停止轉動，對晶片進行一道淸潔的步驟，藉以去除殘留 在晶片表面的微粒，以及避免硏漿交錯污染的情形發生， 再將負載晶片的晶片承載器移到第二硏磨台上進行第二階 段的化學機械硏磨。淸潔步驟包括擦洗（Scrubbing)、旋 4 本紙張尺度適用中國國家標準（匸化）/\4規枯（210'乂297公始） ---------装------ΪΤ------m ("先閱讀背面之注意事彳#填寫本頁) 經濟部中央標準局员工消贽合作社印製 4〇29twf.doc/006 A7 五、發明説明（>) 轉（Rinsing)與旋乾（Spin-Drying)，這些無疑會增加整個 化學機械硏磨所需的時間，因而降低產能。 另外，由第一階段轉換到第二階段的硏磨時，殘留在 晶片表面的硏漿因與空氣接觸而變乾，使淸洗步驟更難進 行，不僅造成後續製程之不便，更會明顯降低晶片的良率 有鑑於此，本發明的主要目的就是在提供一種化學機 械硏磨的裝置與方法’在進行化學機械硏磨的製程時，不 必轉換硏磨台，也無須進行淸洗的步驟，更不用擔心硏漿 交錯污染的情形發生。 根據本發明的上述及其他目的，提出一種化學機械硏 磨的裝置，包括有一個可旋轉的硏磨台，在硏磨台上有一 硏磨墊’一晶片承載器用以負載晶片，並利用輸送管將硏 發輸入於硏磨墊上。硏磨墊分爲內環與外環兩部分，分別 由不同的材質組成，具有不同的硬度，內環的直徑較佳爲 2〇英吋，外環的外緣直徑較佳爲36英吋。 根據本發明的上述及其他目的，提出一種化學機械硏 磨的方法，利用晶片承載益負載晶片，使晶片的表面朝下， 施加一特定壓力，將晶片上欲被硏磨的一側與硏磨墊接 觸，硏磨墊係放置在一會旋轉的硏磨台上，硏磨墊分爲內 環與外環兩部分，兩者的硬度並不相同。利用第一輸送管 將第一硏漿輸入到硏磨墊的中心上，進行第一階段的硏 磨，以使晶片的表面平坦’此時晶片位於硏磨墊外環與內 環其中硬度較高的部分’硏磨時硏漿會因爲離心力而均勻 的塗佈在硏磨墊的表面。完成第一階段的硏磨後’利用第 5 本紙浪尺度適用中國國家標準（CNS ) Λ4規枱（2i〇X297公$ ) 封先閱#背雨之;i意^ν;ί 再填ί"本頁) 裝 線 經消部中央標準局貝工消费合作社印絜4029twf.doc / 006 A7 4029twf.doc / 006 A7 Printed by the Ministry of Economic Affairs of the Bureau of Standards and Consumers Cooperatives ^ V. Description of the Invention (/) The present invention relates to a device and method for flattening the surface of a semiconductor element. In particular, it relates to a device and method for chemical mechanical honing. In semiconductor process technology, surface planarization is an important technology for processing high-density lithography. Because there is no flat surface with high and low dropouts to avoid exposure scattering, a precise pattern transfer is achieved. It is easier to make a wafer, and the transferred wire pattern is more accurate. Therefore, how to flatten the surface of the wafer is very important. In addition, wafer planarization is the main factor that affects the alignment accuracy of the alignment system. If the wafer planarization is not done well, not only the alignment system cannot accurately align the mask with the wafer, but also Increased chance of errors in the process. In the process of planarization, the chemical mechanical honing method is the only method that can provide a Very Large Semiconductor Integration (VLSI), or even an Ultra-LSI (ULSI) process to achieve comprehensive flatness. (Global P1 an ar 1 zati on) a technology. CMP mainly uses the principle of mechanical honing similar to "sharpening" and cooperates with appropriate chemical agents (reagent) to flatten the unevenness of the surface of the wafer. technology. Slurry used in the chemical mechanical honing process usually includes chemically active components such as acid or test, and mechanically active such as colloidal sand. , Or dispersed 3 --------- 3 ^ ------ 1T -------. ^ * J. (&Quot; read it first and pay attention to it事 4 # Fill in this page) This paper size is applicable to Chinese National Standards (CNS) Λ4 specifications (210X 297 g) 4029twf .doc / 006 A7 B7 V. Description of the invention (of) Honing agent for alumina (Abrasive). The surface honing of the wafer is to use the material to be removed to react with the chemically active composition in the paste, and further use a honing agent in the paste to perform mechanical honing. Please refer to FIG. 1, which is a cross-sectional view of a conventional chemical mechanical honing device. The conventional chemical mechanical honing device includes a rotatable honing table 12, and a honing pad 14 is provided on the honing table 12. A wafer carrier 16 is used to load the wafer 18 so that the surface of the wafer 18 faces downward, and the side to be honed on the wafer 18 is brought into contact with the honing pad 14, and the slurry 22 is input by a conveying pipe 20 On the honing pad 14, the honing table 12 is rotated to perform chemical mechanical honing, and the protruding deposited layer on the surface of the wafer 18 is removed step by step. The traditional chemical mechanical honing process is divided into two stages. The first stage uses a hard honing pad for honing to increase wafer flatness. The second stage is performed with a soft honing pad and less pressure to increase the uniformity of the wafer surface. These two stages are performed on two honing tables respectively. In the process of chemical mechanical honing, the properties of the honing paste used in the first and second stage honing are not the same. When the two kinds of honing paste are in contact, it is easy to produce unexpected particles due to the reaction, which contaminates the wafer surface and chemically. Mechanical honing device. Therefore, when the wafer is to be moved from the first honing table to the second honing table for the second-stage honing, it is necessary to wait until the first honing table and the wafer carrier stop rotating, and perform a honing step on the wafer. In order to remove the particles remaining on the surface of the wafer and avoid the contamination of the paste, the wafer carrier carrying the wafer is moved to the second honing table for the second stage of chemical mechanical honing. The cleaning steps include scrubbing and spinning. The paper size is applicable to the Chinese national standard (匸 化) / \ 4 gauge (210 '乂 297). --------- Installation ----- -ΪΤ ------ m (" Read the notes on the back first # Fill in this page) Printed by the Employees' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 4〇29twf.doc / 006 A7 V. Description of the invention (> ) Rinsing and Spin-Drying, these will undoubtedly increase the time required for the entire chemical mechanical honing, thereby reducing production capacity. In addition, when converting from the first stage to the second stage of honing, the paste remaining on the wafer surface becomes dry due to contact with air, making the honing step more difficult, which not only causes inconvenience to subsequent processes, but also significantly reduces it. In view of the wafer yield, the main purpose of the present invention is to provide a chemical mechanical honing device and method. In the process of chemical mechanical honing, it is not necessary to change the honing table and the honing step. Not to worry about staggered contamination. According to the above and other objects of the present invention, a chemical mechanical honing apparatus is provided, which includes a rotatable honing table, and a honing pad is provided on the honing table. A wafer carrier is used to load wafers, and a transfer tube is used. Put the hair on the honing pad. The honing pad is divided into an inner ring and an outer ring, each of which is composed of different materials and has different hardness. The diameter of the inner ring is preferably 20 inches, and the diameter of the outer edge of the outer ring is preferably 36 inches. According to the above and other objects of the present invention, a method for chemical mechanical honing is proposed. The wafer is loaded with a load-bearing wafer, the surface of the wafer is facing downward, and a specific pressure is applied to honing the side to be honed on the wafer and honing. The pads are in contact with each other. The honing pad is placed on a rotating honing table. The honing pad is divided into an inner ring and an outer ring. The hardness of the two is not the same. The first honing slurry is input to the center of the honing pad by the first conveying pipe, and the first stage of honing is performed to make the surface of the wafer flat. At this time, the wafer is located on the outer ring and the inner ring of the honing pad, which has a higher hardness. Part of the 'Honing slurry will be evenly coated on the surface of the honing pad due to centrifugal force during honing. After completing the first stage of honing, the 5th paper scale is applied to the Chinese National Standard (CNS) Λ4 gauge (2i〇X297) $ 封 先 读 # 背 雨 之; i 意 ^ ν; ί Fill in " (This page) Sealed by the Shell Consumer Cooperative of the Central Standards Bureau of the Ministry of Consumer Affairs