TW379379B - A method to avoid dishing in shallow trench isolation - Google Patents

Abstract

The invention relates to a method of filling the shallow trench isolation having the filling material undergo CMP, without dishing on the surface. Therefore, an additional layer is placed between the defined trench masking material and the trench stuffing material, the transitory layer has the characteristics of a removal speed (under chemical and mechanical polishing) larger than that of the coating and stuffing material. The other important improvement of the invention deals with the easier end point detection due to the significant difference between the removal speeds of the masking layer and the transitory layer.

Description

^^ 370 ^^ 370 Λ7 B7 V. Description of the invention ΐΤΤ " ~~~~-Background of the invention (1) Field of invention: Especially the general field of mechanical polishing (CMP) process, a dish-shaped recess is formed during insulation) The problem. A part of the f sequence of the element ′ will be necessary for each different active local silicon edge ^. Probably the most widely used method is to convert to the phase LQ = S) 'where the selected area on the semiconductor surface is added, and the original f is oxide and semiconducting =: fog', and finally: plus: Extend to the surface of the substrate. ’Yu * developed a shallow trench insulation division). Relative to this type of insulation technology, there is-severe U (ΐ / iTgf. Mechanical research and correction 'the surface of the trench filled will produce dish-shaped depressions. We will explain it with reference to Figure 1a, which is the center of a silicon-based economic ministry. Printed by the Standard Bureau Shellfish Consumer Cooperative ^ _ Minus Layer 2 is covered with Nitrided Dream Layer 3. The post-quasi lithography technology has been patterned and has been placed on the side, secret 1 ^ slot 5 (through the opposite side of the ship) As—fresh; one is completely covered with a layer of insulating material such as silicon oxide 4. The more filling material is removed by chemical mechanical polishing method, and the removal rate (usually chemical mechanical polishing method) of 4 is significantly higher than Removal rate of the trench-like hood material 3. In order to meet the subsequent processing requirements, "..., except for all the layers 4 (except those filling the trench 5), the result is as shown in the figure:? 4ίί 5 becomes-concave called Dish-shaped dish (dishmg), because most of the systems are removed, the device is provided to detect A7 A7 during the chemical mechanical polishing process. 5 Description of invention (2) _ '" Layer 3' This is very important 'in order to ensure that when layer 4 is completely After removal, layer 3 is not removed. To achieve this, a real removal rate of layer 4 relative to layer 3 is required In practice, it is necessary to make the removal rate 3 of layer 4 fast to achieve this necessary difference. Therefore, there are different requirements for the relative removal rate of layer 3 and $ 2, which makes it difficult to remove only ^ Yuanke It does not exceed, while avoiding dishing effect. Μ .5 ^ Many methods have been provided in the main technology to deal with this kind of problem, for example, ^ i (l = US Patent No. 5,540,811 in July) illustrates a The square arm is provided with a material-containing area on the convex (protruded) surface area of the fast-grinding material for protection. Buike et al. (No. 5,356,513, October 10, 1994)) alternately stack hard layers and A soft layer, at least a hard structure, is removed from the high point soft material and then quickly removed during grinding when the hard material is removed, while it is still on the side of the low point i, so it forms-a flat surface It is used for the planarization of the surface of the through hole of the filling crane, because tungsten is very hard, and there is no problem of dishing. The US patent No. 5,516,729 for the month of 1981 is waiting for people : Loyalty 1 is protected by the cap material. These s pole work series of sub-grooves' invention summary Object to provide a trench - kind of effect as discussed shallow (Read Notes on the back and then fill the page) installed in the pilot circuit -

, 1T line --- & Printed sv Paper Standards (CNS) 71 ^-(210X29?) By the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. Bureau ’s Consumer Cooperatives printed the Mouthpiece! Ϊ́ dish-shaped depression _ =. In addition to the two masking materials and groove filling materials for the Er'erxi groove (the advantage of the removal rate of chemical machinery research special county is ί point) ΐ and filling material. Another] the removal of f between the more frustrated 'because of the fresh layer and transition layer method, including "formed and filled by the previous technology-the square of the groove =! Kai: dead dish Dishing effect. The layers filled with Γ are filled to prepare trenches formed before the trenches are formed and filled in accordance with the present invention. Trenches. ', A filled and planarized Dish-shaped depression (SSiSilSS). Special county description-the method of removing, in this book == ^ 1 :; 2 is the shape of the groove edge described above. Therefore, it should be noted that other materials (We will use the + XuanLi can be used without departing from the spirit and scope of the present invention. We show an integrated circuit in the manufacturing process, but the knife is not intended. The silicon substrate 1 contains-a thin thermal oxide 2 of 9; has been coated with a layer of silicon nitride 3, the thickness is about αι and 0.2 The micron ratio characteristic is a hard material, and the removal rate of the material is low during chemical mechanical grinding. In this example, the gasified stone is the preferred type 4 because it has other properties that make it suitable for IC manufacturing, but the present invention This "size ^^^^^ 7 ^ 47 --- Please read the precautions for re-zeroing the zero side before filling the binding line

V. Description of the invention (4 ·) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. If 2 = hard materials such as boron nitride, it is still not effective. The formation-cover 3 will be _ified and _ different. The main point is that in the invention introduced by the second invention and this convention, r2; r heavy r: and called the back rib in layer 3 ί ^ ΐίί -sifr carved to form a groove The slot mask 'fills the head with the dagger / plus material 4 / usually the removal rate when the machine is filled with u2ifS5 is about the removal rate of layer 4,., ㈣, the material layer is used: = 以 的 图 二: =; j} is faster than layer 4, and the removal rate of layer 21 is much higher than that of layer 3. The correct end time of the removal of the speed soap of the chemical mechanical grinding (that is, when the layer 21 P Quan Qiu began to remove the layer 3) is now ‘dang: easy to take ^ and layer 3 sickle speed handle real riding. Due to miscellaneous content, please read the item on the back, and then i f% gutter on this page

) A «(21〇X297 ^ iT A7 V production, --10 / V 0------------ V. Invention details (5) '~-Different, so several kinds of endpoint detection The test design can now operate effectively, depending on the current consumed by the grinding motor and monitoring the temperature of the grinding pad. When the rate decreases, these numbers will increase, indicating that greater friction has occurred between the wafer and the pad. Although the present invention has been shown and explained with particular reference to its preferred examples, experts in the bank should understand that various forms and details can be changed without departing from the spirit and scope of the present invention. (Please read the note on the back first Please fill in this page again)

CNS for this paper Langau) A4 ^ (21GX297 mm " T

Claims (1)

f *; ί \ 'J θ V-' 丨, one of the layers of the patent application range of surface materials is provided-the substrate, partially covered with a first iiiii product with a-^^ division rate is greater than the -removal rate A third layer is deposited with a third removal rate less than = 筮 _ the first-removal rate: g: ⑤ 笠, and the rate is greater than the above, the second layer thus forms the first panel j = two plates And the second layer provides an interface between the two layers that detects a change in the removal rate; the second material 'until the device detects i such as nitrogen, a branch of the first item on the side, and the shot-layer is a nitride stone 3 The method of producing patent application No. 1 is silicon, phosphosilicate glass, or borophosate glass. ^ The first layer is the method of applying for the first item of the patent, where the third layer is oxidized ^ The method of applying the first item of the scope of the patent, the fif is about ten times the removal rate of the first layer. The removal rate at U ί 〇 "? Ίρ ?, the removal rate of the third layer is about six. The process of filling-trenching when removing the Hi-circuit H. Changing the wire set for chemical mechanical polishing_ material removal A layer of thermal oxide is formed on one of the surfaces of the broken substrate. A layer of nitrided oxide is deposited on the layer of thermal oxide. 'Movement: Mechanically Grinding-Grooves' have a wall surface and a width of' n (please first (Please read the notes on the back and fill in this page) .I — H 'Installation ——- Printed by the Consumers' Cooperatives of the Central Government Bureau of the Ministry of Economic Affairs The scope of the patent application is reduced to a depth of the dream substrate; the thickness of the soul is too thick to start mixing the groove. The process of this item is between 300 and 150A. The process in which the thickness of the transition layer is deposited is about 7 of her process, wherein the width of the trench is about 1 in which the slope of the walls of the trench; Among them, the device for removing the high-speed ft device and includes a device for monitoring the current consumed by the grinding motor or monitoring the temperature of the grinding chel. η Please read the note of 1¾ first. I 1 Binding Line Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. Printed out of paper. Use the National Two Rate (CNS) A4 Specification (210 > < 297g)