TW376587B - SiC/Si heterostructure semiconductor switch and process for making the same - Google Patents

SiC/Si heterostructure semiconductor switch and process for making the same

Info

Publication number
TW376587B
TW376587B TW087103603A TW87103603A TW376587B TW 376587 B TW376587 B TW 376587B TW 087103603 A TW087103603 A TW 087103603A TW 87103603 A TW87103603 A TW 87103603A TW 376587 B TW376587 B TW 376587B
Authority
TW
Taiwan
Prior art keywords
sic
semiconductor switch
making
same
heterostructure semiconductor
Prior art date
Application number
TW087103603A
Other languages
Chinese (zh)
Inventor
Yean-Kuen Fang
kun-xian Wu
Ze-Jing Chen
Original Assignee
Nat Science Council
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Science Council filed Critical Nat Science Council
Priority to TW087103603A priority Critical patent/TW376587B/en
Application granted granted Critical
Publication of TW376587B publication Critical patent/TW376587B/en

Links

Abstract

The present invention relates to an SiC/Si heterostructure semiconductor switch having a low power consumption and a high ON/OFF current ratio, the structure thereof comprising Al/p-SiC/GCL/n-Si/Al wherein the graded-composition layer (GCL) is located on a buffer layer between the SiC layer and the n-Si substrate.
TW087103603A 1998-03-11 1998-03-11 SiC/Si heterostructure semiconductor switch and process for making the same TW376587B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087103603A TW376587B (en) 1998-03-11 1998-03-11 SiC/Si heterostructure semiconductor switch and process for making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087103603A TW376587B (en) 1998-03-11 1998-03-11 SiC/Si heterostructure semiconductor switch and process for making the same

Publications (1)

Publication Number Publication Date
TW376587B true TW376587B (en) 1999-12-11

Family

ID=57942020

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087103603A TW376587B (en) 1998-03-11 1998-03-11 SiC/Si heterostructure semiconductor switch and process for making the same

Country Status (1)

Country Link
TW (1) TW376587B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8134176B2 (en) 2005-07-28 2012-03-13 Showa Denko K.K. Light-emitting diode and light-emitting diode lamp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8134176B2 (en) 2005-07-28 2012-03-13 Showa Denko K.K. Light-emitting diode and light-emitting diode lamp

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees