TW375754B - Emitter structure of field emission display and method for fabricating thereof - Google Patents

Emitter structure of field emission display and method for fabricating thereof

Info

Publication number
TW375754B
TW375754B TW086111739A TW86111739A TW375754B TW 375754 B TW375754 B TW 375754B TW 086111739 A TW086111739 A TW 086111739A TW 86111739 A TW86111739 A TW 86111739A TW 375754 B TW375754 B TW 375754B
Authority
TW
Taiwan
Prior art keywords
insulating layer
fabricating
field emission
emission display
layer
Prior art date
Application number
TW086111739A
Other languages
Chinese (zh)
Inventor
Chin-Lung Ting
Jiun-Bin Weng
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW086111739A priority Critical patent/TW375754B/en
Application granted granted Critical
Publication of TW375754B publication Critical patent/TW375754B/en

Links

Landscapes

  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

An emitter structure for the field emission display and method for fabricating the same includes forming a first insulating layer on the cathode; depositing a first conductive layer on the first insulating layer; etching the first conductive film to form a tip structure which look like a bow structure from the side view and a triangular structure from the top view; subsequently, forming a second insulating layer on the first conductive layer, where the first conductive film is sandwiched between the first and the second insulating layers and the tip structure projects outside the scope of the second insulating layer and the first insulating layer; then depositing a second conductive layer on the second insulating layer as control gate.
TW086111739A 1997-08-15 1997-08-15 Emitter structure of field emission display and method for fabricating thereof TW375754B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086111739A TW375754B (en) 1997-08-15 1997-08-15 Emitter structure of field emission display and method for fabricating thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086111739A TW375754B (en) 1997-08-15 1997-08-15 Emitter structure of field emission display and method for fabricating thereof

Publications (1)

Publication Number Publication Date
TW375754B true TW375754B (en) 1999-12-01

Family

ID=57941920

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086111739A TW375754B (en) 1997-08-15 1997-08-15 Emitter structure of field emission display and method for fabricating thereof

Country Status (1)

Country Link
TW (1) TW375754B (en)

Similar Documents

Publication Publication Date Title
WO2003065425A3 (en) Emitter and method of making
AU8991598A (en) Self-assembled transport layers for oleds
KR100504472B1 (en) organic electroluminescence device and fabricating method for the same
CA2058513A1 (en) Soi-type thin film transistor and manufacturing method therefor
DE69724129D1 (en) LIGHT-EMITTING ORGANIC DEVICES WITH IMPROVED CATHODE
EP0946993B8 (en) Electrode deposition for organic light-emitting devices
WO2005017967A3 (en) Nanotube device structure and methods of fabrication
EP1037246A3 (en) Electron-emitting device and method of manufacturing the same as well as electron source and image forming apparatus comprising such electron-emitting devices
AUPP922399A0 (en) A method and apparatus (ij46p2)
WO2004057687A3 (en) Light-emitting arrangement
TW368685B (en) Method of fabricating bump electrode
EP0892588A3 (en) Organic electroluminescent display
EP1047095A3 (en) Field emission-type electron source and manufacturing method thereof
WO1999040600A3 (en) Gate electrode structure for field emission devices and method of making
EP1445782A3 (en) Method for manufacturing sealed monolithic electrochemical systems, and sealed monolithic electrochemical system
WO2002021558A3 (en) Vacuum gap dielectric field emission triode
EP1056110A4 (en) Electron emitting device, method of producing the same, and method of driving the same; and image display comprising the electron emitting device and method of producing the same
KR960005736A (en) Field emission display device and manufacturing method thereof
TW375754B (en) Emitter structure of field emission display and method for fabricating thereof
WO2003083889A1 (en) Method for patterning thick-film paste material layer, method for manufacturing cold-cathode field electron emission device, and method for manufacturing cold-cathode field electron emission display
CA2051778A1 (en) Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
EP1205979A4 (en) Single electron tunneling transistor having multilayer structure
CA2368337A1 (en) Thermistor and method of manufacture
EP0806785A3 (en) Method of manufacturing a field emission cold cathode capable of stably producing a high emission current
WO2003009327A1 (en) Field emission type cold cathode and production method therefor and flat image device provided with field emission type cold cathode

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees