TW374204B - A plasma CVD processing method and a semiconductor having metal film manufactured with the same - Google Patents

A plasma CVD processing method and a semiconductor having metal film manufactured with the same

Info

Publication number
TW374204B
TW374204B TW085115987A TW85115987A TW374204B TW 374204 B TW374204 B TW 374204B TW 085115987 A TW085115987 A TW 085115987A TW 85115987 A TW85115987 A TW 85115987A TW 374204 B TW374204 B TW 374204B
Authority
TW
Taiwan
Prior art keywords
semiconductor
metal film
plasma cvd
corrosion
film manufactured
Prior art date
Application number
TW085115987A
Other languages
Chinese (zh)
Inventor
Takaaki Miyamoto
Shingo Kadomura
Atsushi Kawashima
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP33630995A external-priority patent/JP3254997B2/en
Priority claimed from JP8011272A external-priority patent/JPH09205070A/en
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of TW374204B publication Critical patent/TW374204B/en

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  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

This invention aims to present a plasma CVD process and a semiconductor having metal film manufactured with; the same process wherein the semiconductor is formed in the process of forming the Ti metal film with few halogens residue and no corrosion at the underlayer conductor. The advantageous CVD conditions for reduction can be set through monitoring the variation of the spectrum of the hydrogen atomic beam of the plasma with a mixed gas composed of TiCl4 and H2 whereby the underlay silicon: substrate is prevented from corrosion and inhomogeneity. Thus, the high reliability semiconductor is obtainable provided, for the A1 metal wire formed on the metal film can be made free from the corrosion.
TW085115987A 1995-12-25 1996-12-24 A plasma CVD processing method and a semiconductor having metal film manufactured with the same TW374204B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP33630995A JP3254997B2 (en) 1995-12-25 1995-12-25 Plasma CVD method and semiconductor device having metal film formed thereby
JP8011272A JPH09205070A (en) 1996-01-25 1996-01-25 Plasma cvd system and semiconductor device having metal film formed thereby

Publications (1)

Publication Number Publication Date
TW374204B true TW374204B (en) 1999-11-11

Family

ID=57941807

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085115987A TW374204B (en) 1995-12-25 1996-12-24 A plasma CVD processing method and a semiconductor having metal film manufactured with the same

Country Status (1)

Country Link
TW (1) TW374204B (en)

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