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Priority claimed from JP33630995Aexternal-prioritypatent/JP3254997B2/en
Priority claimed from JP8011272Aexternal-prioritypatent/JPH09205070A/en
Application filed by Sony CorpfiledCriticalSony Corp
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Publication of TW374204BpublicationCriticalpatent/TW374204B/en
This invention aims to present a plasma CVD process and a semiconductor having metal film manufactured with; the same process wherein the semiconductor is formed in the process of forming the Ti metal film with few halogens residue and no corrosion at the underlayer conductor. The advantageous CVD conditions for reduction can be set through monitoring the variation of the spectrum of the hydrogen atomic beam of the plasma with a mixed gas composed of TiCl4 and H2 whereby the underlay silicon: substrate is prevented from corrosion and inhomogeneity. Thus, the high reliability semiconductor is obtainable provided, for the A1 metal wire formed on the metal film can be made free from the corrosion.
TW085115987A1995-12-251996-12-24A plasma CVD processing method and a semiconductor having metal film manufactured with the same
TW374204B
(en)