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Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
This invention relates to method of producing metal layer in integrated circuit, especially a kind of non-electric coating method for producing metal layer. It mainly applies oxidized metal, deteriorated metal zinc and non-electric galvanized metal, oxidization reaction of the metal series, to from traditional CVD or PVD production, metal layer is not produced easier, metal layer such as Cu, Ni, W or Co etc. Its substantial steps shall comprise: (1) first, producing first metal layer which is easily oxidized, restoration agent as subsequent zinc replace processing; (2) following, with zinc to replace processing, making deteriorated metal zinc to replace step 1 first metal layer; (3) finally, by using deterioration of zinc effect and non-electric galvanization process to restore, forming the required non-electric metal layer.
TW087103989A1998-03-181998-03-18Method of producing metal layer in integrated circuit
TW373269B
(en)