TW372335B - Manufacturing method for increasing selectivity of photo-resistance - Google Patents
Manufacturing method for increasing selectivity of photo-resistanceInfo
- Publication number
- TW372335B TW372335B TW086118962A TW86118962A TW372335B TW 372335 B TW372335 B TW 372335B TW 086118962 A TW086118962 A TW 086118962A TW 86118962 A TW86118962 A TW 86118962A TW 372335 B TW372335 B TW 372335B
- Authority
- TW
- Taiwan
- Prior art keywords
- resistance
- photo
- manufacturing
- etching
- increasing selectivity
- Prior art date
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
A kind of manufacturing method for increasing selectivity of photo-resistance. During the etching process of metal wires, to add a low dielectric constant material under the photo-resistance and after the photolithography process, employ the plasma with fluoride gas for etching the low dielectric constant material. The manufacturing method provided in this invention can enhance the precision of pattern shift at exposure to avoid the shrink of metal wiring width and reduce the process for removing photo-resistance after etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086118962A TW372335B (en) | 1997-12-16 | 1997-12-16 | Manufacturing method for increasing selectivity of photo-resistance |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086118962A TW372335B (en) | 1997-12-16 | 1997-12-16 | Manufacturing method for increasing selectivity of photo-resistance |
Publications (1)
Publication Number | Publication Date |
---|---|
TW372335B true TW372335B (en) | 1999-10-21 |
Family
ID=57941631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086118962A TW372335B (en) | 1997-12-16 | 1997-12-16 | Manufacturing method for increasing selectivity of photo-resistance |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW372335B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8748323B2 (en) | 2008-07-07 | 2014-06-10 | Macronix International Co., Ltd. | Patterning method |
-
1997
- 1997-12-16 TW TW086118962A patent/TW372335B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8748323B2 (en) | 2008-07-07 | 2014-06-10 | Macronix International Co., Ltd. | Patterning method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69635972D1 (en) | Plasma etching process | |
EP0651437A3 (en) | Plasma etch process. | |
KR960012358A (en) | High speed metal etching method with no residues left by high frequency high power inductively coupled plasma | |
CA2286326A1 (en) | Article, method, and apparatus for electrochemical fabrication | |
TW257875B (en) | Method of forming miniature pattern | |
WO2002091449A3 (en) | Etching a substrate in a process zone | |
WO2002071438A3 (en) | Capillary discharge plasma apparatus and method for surface treatment using the same | |
TW344863B (en) | Method for etching metal silicide with high selectivity to polysilicon | |
DE69401370D1 (en) | Etching process for semiconductors | |
DE69322058D1 (en) | Plasma etching process | |
JPS5656636A (en) | Processing method of fine pattern | |
WO2002041351A3 (en) | Method of fabricating capillary discharge plasma display panel using combination of laser and wet etchings | |
TW372335B (en) | Manufacturing method for increasing selectivity of photo-resistance | |
AU2737301A (en) | An insitu post etch process to remove remaining photoresist and residual sidewall passivation | |
WO2000039839A3 (en) | High aspect ratio sub-micron contact etch process in an inductively-coupled plasma processing system | |
EP1070157A4 (en) | Method for removing photoresist and plasma etch residues | |
KR970000198B1 (en) | Process for anisotropically etching semiconductor material | |
TW375778B (en) | Process for forming rugged polysilicon | |
TW350988B (en) | Manufacturing method of forming metal layout by means of hard mask | |
KR960008525B1 (en) | Manufacturing method of metal wiring layer pattern | |
TW290727B (en) | The manufacturing method for metal via hole | |
IT1271298B (en) | PHOTOLITHOGRAPHIC PROCESS FOR CONTACT FOR THE REALIZATION OF METAL LINES ON A SUBSTRATE | |
JPS5399873A (en) | Forming method of electrode of semiconductor device | |
KR980005631A (en) | Contact hole formation method | |
WO2003019640A3 (en) | Method of forming a thin layer and a contact outlet |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |