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Priority claimed from JP606995Aexternal-prioritypatent/JPH08185695A/en
Application filed by Mitsubishi Electric CorpfiledCriticalMitsubishi Electric Corp
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Publication of TW366591BpublicationCriticalpatent/TW366591B/en
The present invention relates to a semiconductor memory of fast access speed as SRAM and the memory capacity as that of DRAM. The structure of the invention has the SRAM memory unit array disposed with SRAM memory unit SMC and DRAM memory cell DMC being disposed as matrix DRAM memory cell array DA, having the memory cell arrays sharing the wordlines WL1-WLn in SA, DA.
TW084100899A1994-10-311995-01-27Semiconductor memory, the operation method and the manufacturing method
TW366591B
(en)