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A method of cleaning wafers after planarization process for cleaning surface of wafers after CMP (chemical mechanical polishing) using chemical solutions (NH4H, HCl or H2O2) common in RCA cleaning steps for initial cleaning of wafers and with scrubbing, JET or megasonic for removal of the slurry, metal ions (sodium, potassium, etc.) and particles or powders generated in the polishing.
TW084112198A1995-11-171995-11-17Method of cleaning wafers after planarization process
TW366515B
(en)