TW363249B - Manufacturing method for reducing the contact deformation - Google Patents

Manufacturing method for reducing the contact deformation

Info

Publication number
TW363249B
TW363249B TW086100307A TW86100307A TW363249B TW 363249 B TW363249 B TW 363249B TW 086100307 A TW086100307 A TW 086100307A TW 86100307 A TW86100307 A TW 86100307A TW 363249 B TW363249 B TW 363249B
Authority
TW
Taiwan
Prior art keywords
layer
metal silicide
annealing
reflection
metal
Prior art date
Application number
TW086100307A
Other languages
Chinese (zh)
Inventor
Chih-Hsiang Cheng
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW086100307A priority Critical patent/TW363249B/en
Application granted granted Critical
Publication of TW363249B publication Critical patent/TW363249B/en

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Abstract

A kind of manufacturing method on which there is a metal silicide layer on the surface of silicon contact region with cruds and to form a conductive layer on it. The selected thickness and material must make the conductive layer be a reflection resistant layer during the process of contact photolithography. The formed reflection resistant layer is to depose a metal layer on the doped contact region and convert part of metal layer into metal silicide by the annealing process. The second annealing converts the metal silicide to a low resistance phase. The third annealing employs the rapid thermal anneal, better within the nitride or ammonia, to convert part of surface of metal silicide into the titanium nitride whose thickness must be able to be the reflection resistant layer that the thickness equals to a quarter of wave length used by the photo phase corresponding to the reflection rate of titanium nitride in the process of forming the dielectric contact.
TW086100307A 1997-01-13 1997-01-13 Manufacturing method for reducing the contact deformation TW363249B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086100307A TW363249B (en) 1997-01-13 1997-01-13 Manufacturing method for reducing the contact deformation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086100307A TW363249B (en) 1997-01-13 1997-01-13 Manufacturing method for reducing the contact deformation

Publications (1)

Publication Number Publication Date
TW363249B true TW363249B (en) 1999-07-01

Family

ID=57940879

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086100307A TW363249B (en) 1997-01-13 1997-01-13 Manufacturing method for reducing the contact deformation

Country Status (1)

Country Link
TW (1) TW363249B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110880540A (en) * 2018-09-06 2020-03-13 鼎元光电科技股份有限公司 Photodiode and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110880540A (en) * 2018-09-06 2020-03-13 鼎元光电科技股份有限公司 Photodiode and method for manufacturing the same

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees