TW363249B - Manufacturing method for reducing the contact deformation - Google Patents
Manufacturing method for reducing the contact deformationInfo
- Publication number
- TW363249B TW363249B TW086100307A TW86100307A TW363249B TW 363249 B TW363249 B TW 363249B TW 086100307 A TW086100307 A TW 086100307A TW 86100307 A TW86100307 A TW 86100307A TW 363249 B TW363249 B TW 363249B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- metal silicide
- annealing
- reflection
- metal
- Prior art date
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A kind of manufacturing method on which there is a metal silicide layer on the surface of silicon contact region with cruds and to form a conductive layer on it. The selected thickness and material must make the conductive layer be a reflection resistant layer during the process of contact photolithography. The formed reflection resistant layer is to depose a metal layer on the doped contact region and convert part of metal layer into metal silicide by the annealing process. The second annealing converts the metal silicide to a low resistance phase. The third annealing employs the rapid thermal anneal, better within the nitride or ammonia, to convert part of surface of metal silicide into the titanium nitride whose thickness must be able to be the reflection resistant layer that the thickness equals to a quarter of wave length used by the photo phase corresponding to the reflection rate of titanium nitride in the process of forming the dielectric contact.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086100307A TW363249B (en) | 1997-01-13 | 1997-01-13 | Manufacturing method for reducing the contact deformation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086100307A TW363249B (en) | 1997-01-13 | 1997-01-13 | Manufacturing method for reducing the contact deformation |
Publications (1)
Publication Number | Publication Date |
---|---|
TW363249B true TW363249B (en) | 1999-07-01 |
Family
ID=57940879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086100307A TW363249B (en) | 1997-01-13 | 1997-01-13 | Manufacturing method for reducing the contact deformation |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW363249B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110880540A (en) * | 2018-09-06 | 2020-03-13 | 鼎元光电科技股份有限公司 | Photodiode and method for manufacturing the same |
-
1997
- 1997-01-13 TW TW086100307A patent/TW363249B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110880540A (en) * | 2018-09-06 | 2020-03-13 | 鼎元光电科技股份有限公司 | Photodiode and method for manufacturing the same |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |