TW362236B - Ion-implantation system for fabricating semiconductor device - Google Patents
Ion-implantation system for fabricating semiconductor deviceInfo
- Publication number
- TW362236B TW362236B TW086104654A TW86104654A TW362236B TW 362236 B TW362236 B TW 362236B TW 086104654 A TW086104654 A TW 086104654A TW 86104654 A TW86104654 A TW 86104654A TW 362236 B TW362236 B TW 362236B
- Authority
- TW
- Taiwan
- Prior art keywords
- ion
- semiconductor device
- implantation system
- fabricating semiconductor
- tendetron
- Prior art date
Links
- 238000005468 ion implantation Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000010884 ion-beam technique Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960044634A KR100234533B1 (ko) | 1996-10-08 | 1996-10-08 | 반도체소자 제조용 이온주입 시스템 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW362236B true TW362236B (en) | 1999-06-21 |
Family
ID=19476670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086104654A TW362236B (en) | 1996-10-08 | 1997-04-11 | Ion-implantation system for fabricating semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5945682A (zh) |
| JP (1) | JPH10112278A (zh) |
| KR (1) | KR100234533B1 (zh) |
| TW (1) | TW362236B (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130436A (en) * | 1998-06-02 | 2000-10-10 | Varian Semiconductor Equipment Associates, Inc. | Acceleration and analysis architecture for ion implanter |
| KR100532364B1 (ko) * | 1998-09-08 | 2006-02-01 | 삼성전자주식회사 | 반도체 이온주입기의 가속에너지 실시간 감시장치 |
| US7544958B2 (en) * | 2007-03-23 | 2009-06-09 | Varian Semiconductor Equipment Associates, Inc. | Contamination reduction during ion implantation |
| JP6686962B2 (ja) * | 2017-04-25 | 2020-04-22 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0081371B1 (en) * | 1981-12-07 | 1988-05-11 | Vg Instruments Group Limited | Improvements in or relating to multiple collector mass spectrometers |
| US5389793A (en) * | 1983-08-15 | 1995-02-14 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
-
1996
- 1996-10-08 KR KR1019960044634A patent/KR100234533B1/ko not_active IP Right Cessation
-
1997
- 1997-04-11 TW TW086104654A patent/TW362236B/zh not_active IP Right Cessation
- 1997-04-25 JP JP9109682A patent/JPH10112278A/ja active Pending
- 1997-09-15 US US08/929,524 patent/US5945682A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5945682A (en) | 1999-08-31 |
| JPH10112278A (ja) | 1998-04-28 |
| KR100234533B1 (ko) | 1999-12-15 |
| KR19980026266A (ko) | 1998-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |