TW359885B - Method for producing wafer marking while avoiding the formation of debris - Google Patents

Method for producing wafer marking while avoiding the formation of debris

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Publication number
TW359885B
TW359885B TW087100029A TW87100029A TW359885B TW 359885 B TW359885 B TW 359885B TW 087100029 A TW087100029 A TW 087100029A TW 87100029 A TW87100029 A TW 87100029A TW 359885 B TW359885 B TW 359885B
Authority
TW
Taiwan
Prior art keywords
wafer
marking
laser beam
debris
tape
Prior art date
Application number
TW087100029A
Other languages
Chinese (zh)
Inventor
Guo-Yau Weng
Yu-Chi Lin
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW087100029A priority Critical patent/TW359885B/en
Application granted granted Critical
Publication of TW359885B publication Critical patent/TW359885B/en

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Abstract

In a typical semiconductor IC production process, a laser beam is used to inscribe a specific marking on the wafer for the identification of the batch information of the product. However, the debris generated by the direct bombardment of the high energy laser beam on the surface of the wafer is liable to form a source of contamination and affects the yield of the product. Therefor, in order to rectify the above defect, the present invention proposes an improved process for producing the semiconductor wafer marking, which comprises: defining a marking pattern on a glue tape by a laser beam, adhering the glue tape on the surface of the wafer, transferring the marking pattern on the tape to a wafer by a dry or wet process, and peeling off the tape thereby completing the production of the wafer marking. The invented method replaces the laser beam with an etching process thereby avoiding the formation of the debris on the wafer, reducing the source of contamination and increasing the yield of product.
TW087100029A 1998-01-02 1998-01-02 Method for producing wafer marking while avoiding the formation of debris TW359885B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087100029A TW359885B (en) 1998-01-02 1998-01-02 Method for producing wafer marking while avoiding the formation of debris

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087100029A TW359885B (en) 1998-01-02 1998-01-02 Method for producing wafer marking while avoiding the formation of debris

Publications (1)

Publication Number Publication Date
TW359885B true TW359885B (en) 1999-06-01

Family

ID=57940636

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087100029A TW359885B (en) 1998-01-02 1998-01-02 Method for producing wafer marking while avoiding the formation of debris

Country Status (1)

Country Link
TW (1) TW359885B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202010004567U1 (en) 2010-04-06 2010-07-22 Lightspeed International Co. Multifunction Webcam
US8557715B2 (en) 2006-07-07 2013-10-15 National Cheng Kung University Marking CO2 laser-transparent materials by using absorption-material-assisted laser processing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8557715B2 (en) 2006-07-07 2013-10-15 National Cheng Kung University Marking CO2 laser-transparent materials by using absorption-material-assisted laser processing
US8703410B2 (en) 2006-07-07 2014-04-22 National Cheng Kung University Substrate having a mark formed on a surface thereof by a CO2 laser beam
DE202010004567U1 (en) 2010-04-06 2010-07-22 Lightspeed International Co. Multifunction Webcam

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