TW359869B - Thermodynamically stable layers in semiconductor devices - Google Patents
Thermodynamically stable layers in semiconductor devicesInfo
- Publication number
- TW359869B TW359869B TW086109685A TW86109685A TW359869B TW 359869 B TW359869 B TW 359869B TW 086109685 A TW086109685 A TW 086109685A TW 86109685 A TW86109685 A TW 86109685A TW 359869 B TW359869 B TW 359869B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- chosen
- dielectric layer
- layer
- layers
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052723 transition metal Inorganic materials 0.000 abstract 1
- 150000003624 transition metals Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
In a semiconductor device such as a capacitor having two electrode layers and a dielectric layer, the electrode layers are chosen such that the interfaces between the electrode layers and the dielectric layer are thermodynamically stable in the desired temperature range. In an embodiment of the invention, one of the electrode layers consists of polysilicon. The second electrode layer and the dielectric layer may be chosen such that they have an element in common, such as a metal. The second electrode layer may be composed of the pure element or a compound of the element which is electrically conductive, such as a nitride of the element. Similarly, the dielectric layer, which must be insulating, may be composed of the element or a compound thereof, such as an oxide of the element. The element may be chosen from the transition metals in the periodic table and compounds thereof chosen for the electrode and dielectric layers. Preferably, the element is chosen from the metals in Group VB of the periodic table. In a preferred embodiment, the first electrode layer is polysilicon, the dielectric layer is tantalum pentoxide, and the second electrode layer is tantalum nitride.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67863496A | 1996-07-10 | 1996-07-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW359869B true TW359869B (en) | 1999-06-01 |
Family
ID=24723629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086109685A TW359869B (en) | 1996-07-10 | 1997-07-09 | Thermodynamically stable layers in semiconductor devices |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH10135429A (en) |
| KR (1) | KR980012543A (en) |
| TW (1) | TW359869B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6939760B2 (en) | 2002-07-02 | 2005-09-06 | Elpida Memory, Inc. | Method for semiconductor device manufacturing to include multistage chemical vapor deposition of material oxide film |
-
1997
- 1997-07-09 TW TW086109685A patent/TW359869B/en active
- 1997-07-10 JP JP9219704A patent/JPH10135429A/en not_active Withdrawn
- 1997-07-10 KR KR1019970031870A patent/KR980012543A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6939760B2 (en) | 2002-07-02 | 2005-09-06 | Elpida Memory, Inc. | Method for semiconductor device manufacturing to include multistage chemical vapor deposition of material oxide film |
Also Published As
| Publication number | Publication date |
|---|---|
| KR980012543A (en) | 1998-04-30 |
| JPH10135429A (en) | 1998-05-22 |
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