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Application filed by Mosel Vitelic IncfiledCriticalMosel Vitelic Inc
Priority to TW086116011ApriorityCriticalpatent/TW357410B/en
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Publication of TW357410BpublicationCriticalpatent/TW357410B/en
A method of prevention over etch back in performance of code etch on an element, during production of a semiconductor of Video Read Only Memory (VROM), including the element a gate electrode, a drain electrode a source electrode and a first dielectric layer, which covers the gate electrode, the drain electrode and the source electrode, including the method at least: forming of a second dielecric layer on the first dielectric layer; forming of a third dielecric layer on the second dielectric layer; and etching the third dielectric layer with an etching agent, which has a rough etching rate of 10:1 with respect to the third dielectric layer and the second dielectric layer.
TW086116011A1997-10-281997-10-28Method of prevention overetch back
TW357410B
(en)