TW353197B - Method for forming fine pattern using chemically amplified resist - Google Patents

Method for forming fine pattern using chemically amplified resist

Info

Publication number
TW353197B
TW353197B TW084114059A TW84114059A TW353197B TW 353197 B TW353197 B TW 353197B TW 084114059 A TW084114059 A TW 084114059A TW 84114059 A TW84114059 A TW 84114059A TW 353197 B TW353197 B TW 353197B
Authority
TW
Taiwan
Prior art keywords
chemically amplified
amplified resist
fine pattern
forming fine
resist
Prior art date
Application number
TW084114059A
Other languages
Chinese (zh)
Inventor
Ki-Sung Ye
Young-Seok Ohu
Nak-Keun Sung
Chang-Hwan Lee
Ji-Yong Yu
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019940039002A external-priority patent/KR0144936B1/en
Priority claimed from KR1019950001778A external-priority patent/KR0175001B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW353197B publication Critical patent/TW353197B/en

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A method of forming a pattern using a chemically amplified resist, which comprises the following steps: applying a surface treating for enhancing adhesion of the material layer formed between a coated resist and the substrate; applying a high temperature bake process on the surface-treated substrate; and coating a resist on the baked structure.
TW084114059A 1994-12-29 1995-12-28 Method for forming fine pattern using chemically amplified resist TW353197B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019940039002A KR0144936B1 (en) 1994-12-29 1994-12-29 Micro pattern formation method using chemically amplified resist
KR1019950001778A KR0175001B1 (en) 1995-01-28 1995-01-28 Method for inhibiting acid neutralization in lithography process using chemical amplified resist

Publications (1)

Publication Number Publication Date
TW353197B true TW353197B (en) 1999-02-21

Family

ID=26630825

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084114059A TW353197B (en) 1994-12-29 1995-12-28 Method for forming fine pattern using chemically amplified resist

Country Status (2)

Country Link
JP (1) JPH08250415A (en)
TW (1) TW353197B (en)

Also Published As

Publication number Publication date
JPH08250415A (en) 1996-09-27

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees