TW346659B - Process for producing metallic capacitor and structure thereof - Google Patents

Abstract

A process for producing a metallic capacitor which is produced on the surface of a semiconductor substrate by forming a metallic capacitor structure, the process comprising the following steps: (a) forming a first metallic layer covering the surface of the semiconductor substrate; (b) etching the first metallic layer by using a photolithography and etching technique thereby defining a lower layer electrode plate of a capacitor; (c) forming a dielectric layer covering the surface of the semiconductor substrate and the first metallic layer as a dielectric material of the metallic capacitor; (d) forming a second metallic layer covering the surface of the dielectric layer; (e) etching the second metallic layer by using a photolithography and etching technique thereby forming an upper layer electrode plate of the metallic capacitor; (f) depositing an interlayer metallic dielectric layer covering the whole surface; (g) planarizing the interlayer metallic dielectric layer; (h) using a a photolithography and etching technique to form a plurality of contact holes in the interlayer metallic dielectric layer thereby forming contact holes of the second metallic layer; (I) filling a conductive material into the contact holes; (j) forming a third metallic layer covering the surface of the interlayer metallic dielectric layer; and (k) etching the third metallic layer by using a a photolithography and etching technique thereby completing the production of the metallic capacitor.