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A nitride semiconductor light-emitting device comprising: an active layer of a quantum well structure comprising a nitride semiconductor containing indium and gallium, and having first and second main surfaces; a first p-type clad layer comprising a p-type nitride semiconductor containing aluminum and gallium, and provided in contact with the second main surface of the active layer; a second p-type clad layer comprising a p-type nitride semiconductor containing aluminum and gallium, having a larger band gap than that of the first p-type clad layer, and provided on the first p-type clad layer; and an n-type semiconductor layer provided in contact with the first main surface of the active layer.
Group iii nitride based light emitting diode structures with a quantum well and superlattice, group iii nitride based quantum well structures and group iii nitride based superlattice structures
Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device