TW343376B - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
TW343376B
TW343376B TW086110808A TW86110808A TW343376B TW 343376 B TW343376 B TW 343376B TW 086110808 A TW086110808 A TW 086110808A TW 86110808 A TW86110808 A TW 86110808A TW 343376 B TW343376 B TW 343376B
Authority
TW
Taiwan
Prior art keywords
layer
oxide dielectric
electrode layer
substrate
semiconductor device
Prior art date
Application number
TW086110808A
Other languages
Chinese (zh)
Inventor
Masahiko Hiraya
Keiko Kushida
Kazumi Torii
Hiroshi Miki
Yuichi Matsui
Yoshihisa Fujisaki
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW343376B publication Critical patent/TW343376B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

A semiconductor device characterized in having a substrate, a lower electrode layer installed on the upper portion of the substrate, an oxide dielectric layer formed on the lower electrode layer, and an upper electrode layer installed on the oxide dielectric layer; the lower and upper electrode layers and the oxide dielectric layer constituting the oxide dielectric capacitor, the lower electrode layer including a conductive oxide layer comprised of two adjacent layers having the same crystal structure and containing the same element and being different from each other only in the oxygen ratio in the composition, the side layer of the inner substrate on the two adjacent layers containing oxygen deficiency.
TW086110808A 1996-08-07 1997-07-29 Semiconductor device and its manufacture TW343376B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1996/002226 WO1998006131A1 (en) 1996-08-07 1996-08-07 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
TW343376B true TW343376B (en) 1998-10-21

Family

ID=14153652

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086110808A TW343376B (en) 1996-08-07 1997-07-29 Semiconductor device and its manufacture

Country Status (2)

Country Link
TW (1) TW343376B (en)
WO (1) WO1998006131A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3681632B2 (en) 2000-11-06 2005-08-10 松下電器産業株式会社 Semiconductor device and manufacturing method thereof
WO2009122497A1 (en) 2008-03-31 2009-10-08 富士通マイクロエレクトロニクス株式会社 Ferroelectric memory and its manufacturing method, and ferroelectric capacitor manufacturing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2682392B2 (en) * 1993-09-01 1997-11-26 日本電気株式会社 Thin film capacitor and method of manufacturing the same
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
JP2703206B2 (en) * 1994-09-30 1998-01-26 三星電子株式会社 Ferroelectric capacitor and method of manufacturing the same
JP2735094B2 (en) * 1994-12-01 1998-04-02 日本電気株式会社 Thin film capacitor and method of manufacturing the same

Also Published As

Publication number Publication date
WO1998006131A1 (en) 1998-02-12

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