Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32984394Aexternal-prioritypatent/JP3751329B2/en
Application filed by Komatsu Denshi Kinzoku KkfiledCriticalKomatsu Denshi Kinzoku Kk
Application grantedgrantedCritical
Publication of TW341716BpublicationCriticalpatent/TW341716B/en
An epitaxial wafer produced by a process of epitaxially growing an epitaxial layer on a substrate wafer, the substrate wafer having laser-scattering centers in a density of more than 5x106 /cm3, whereby the surface of the epitaxial layer consists of a non-defect layer, and the substrate wafer and a portion of the epitaxial layer adjacent the substrate wafer are capable of removing impurities.