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Publication of TW338194BpublicationCriticalpatent/TW338194B/en
The formation of crystalized films featuring the first step of the formation of the foil onto the base plate and the formation of the second engineering film of the crystalized surface of the foil with the characteristics of that: the second engineering is the crystalization conducted in the hydrogen-containing ambient and with the foil surface fused.
TW086101200A1996-03-061997-02-01High-energy supply, crystalized film formation and manufacturing method of foil electronic machines
TW338194B
(en)
Punched adhesive tape for semiconductor, method of manufacturing lead frame with the adhesive tape, lead frame with the adhesive tape, and semiconductor device comprising the lead frame.