TW337604B - Flash memory structure with self-aligning floating gate and process of producing the same - Google Patents
Flash memory structure with self-aligning floating gate and process of producing the sameInfo
- Publication number
- TW337604B TW337604B TW086108243A TW86108243A TW337604B TW 337604 B TW337604 B TW 337604B TW 086108243 A TW086108243 A TW 086108243A TW 86108243 A TW86108243 A TW 86108243A TW 337604 B TW337604 B TW 337604B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive layer
- self
- flash memory
- floating gate
- producing
- Prior art date
Links
Landscapes
- Non-Volatile Memory (AREA)
Abstract
A flash memory with self-aligning floating gate, which comprises: a semiconductor substrate formed with a tunneling oxide thereon in which a first conductive layer is formed on the tunneling oxide; a plurality of plugs formed in the semiconductor substrate, the tunneling oxide and the first conductive layer, and going through the tunneling oxide and the first conductive layer, the plugs being approximately of a same height as the first conductive layer; a dielectric layer formed on the plugs and the first conductive layer; and a second conductive layer formed on the dielectric layer, in which the first conductive layer, the dielectric layer and the second conductive layer jointly form a stack gate structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086108243A TW337604B (en) | 1997-06-14 | 1997-06-14 | Flash memory structure with self-aligning floating gate and process of producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086108243A TW337604B (en) | 1997-06-14 | 1997-06-14 | Flash memory structure with self-aligning floating gate and process of producing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
TW337604B true TW337604B (en) | 1998-08-01 |
Family
ID=58263219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086108243A TW337604B (en) | 1997-06-14 | 1997-06-14 | Flash memory structure with self-aligning floating gate and process of producing the same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW337604B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI394230B (en) * | 2009-07-30 | 2013-04-21 | Winbond Electronics Corp | Method for forming a semiconductor device |
-
1997
- 1997-06-14 TW TW086108243A patent/TW337604B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI394230B (en) * | 2009-07-30 | 2013-04-21 | Winbond Electronics Corp | Method for forming a semiconductor device |
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Legal Events
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MK4A | Expiration of patent term of an invention patent |