TW337604B - Flash memory structure with self-aligning floating gate and process of producing the same - Google Patents

Flash memory structure with self-aligning floating gate and process of producing the same

Info

Publication number
TW337604B
TW337604B TW086108243A TW86108243A TW337604B TW 337604 B TW337604 B TW 337604B TW 086108243 A TW086108243 A TW 086108243A TW 86108243 A TW86108243 A TW 86108243A TW 337604 B TW337604 B TW 337604B
Authority
TW
Taiwan
Prior art keywords
conductive layer
self
flash memory
floating gate
producing
Prior art date
Application number
TW086108243A
Other languages
Chinese (zh)
Inventor
Jong Chen
Chorng-Rong Lin
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW086108243A priority Critical patent/TW337604B/en
Application granted granted Critical
Publication of TW337604B publication Critical patent/TW337604B/en

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Abstract

A flash memory with self-aligning floating gate, which comprises: a semiconductor substrate formed with a tunneling oxide thereon in which a first conductive layer is formed on the tunneling oxide; a plurality of plugs formed in the semiconductor substrate, the tunneling oxide and the first conductive layer, and going through the tunneling oxide and the first conductive layer, the plugs being approximately of a same height as the first conductive layer; a dielectric layer formed on the plugs and the first conductive layer; and a second conductive layer formed on the dielectric layer, in which the first conductive layer, the dielectric layer and the second conductive layer jointly form a stack gate structure.
TW086108243A 1997-06-14 1997-06-14 Flash memory structure with self-aligning floating gate and process of producing the same TW337604B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086108243A TW337604B (en) 1997-06-14 1997-06-14 Flash memory structure with self-aligning floating gate and process of producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086108243A TW337604B (en) 1997-06-14 1997-06-14 Flash memory structure with self-aligning floating gate and process of producing the same

Publications (1)

Publication Number Publication Date
TW337604B true TW337604B (en) 1998-08-01

Family

ID=58263219

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086108243A TW337604B (en) 1997-06-14 1997-06-14 Flash memory structure with self-aligning floating gate and process of producing the same

Country Status (1)

Country Link
TW (1) TW337604B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394230B (en) * 2009-07-30 2013-04-21 Winbond Electronics Corp Method for forming a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394230B (en) * 2009-07-30 2013-04-21 Winbond Electronics Corp Method for forming a semiconductor device

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