TW332930B - The vertical cavity surface-emitting laser of GaN - Google Patents
The vertical cavity surface-emitting laser of GaNInfo
- Publication number
- TW332930B TW332930B TW086107863A TW86107863A TW332930B TW 332930 B TW332930 B TW 332930B TW 086107863 A TW086107863 A TW 086107863A TW 86107863 A TW86107863 A TW 86107863A TW 332930 B TW332930 B TW 332930B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- gan
- emitting laser
- cavity surface
- vertical cavity
- Prior art date
Links
Abstract
A vertical cavity surface-emitting laser of GaN, it includes: Form the 1st reflection layer at one side of substrate; Form buffer layer at the other side of substrate; Form N-GaN layer on buffer layer, and form 1st electrode on N-GaN; Form 1st current limiting layer on N-GaN; Form 1st cladding layer on 1st current limiting layer; Form active layer on 1st cladding layer; Form 2nd cladding layer on active layer; Form 2nd current limiting layer on 2nd cladding layer; Form P-GaN layer on 2nd current limiting layer, and already form 2nd electrode on P-GaN layer; Form 2nd reflection layer on P-GaN.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086107863A TW332930B (en) | 1997-06-06 | 1997-06-06 | The vertical cavity surface-emitting laser of GaN |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086107863A TW332930B (en) | 1997-06-06 | 1997-06-06 | The vertical cavity surface-emitting laser of GaN |
Publications (1)
Publication Number | Publication Date |
---|---|
TW332930B true TW332930B (en) | 1998-06-01 |
Family
ID=58262829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086107863A TW332930B (en) | 1997-06-06 | 1997-06-06 | The vertical cavity surface-emitting laser of GaN |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW332930B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8168456B2 (en) | 2004-10-01 | 2012-05-01 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
US8451875B2 (en) | 2004-10-01 | 2013-05-28 | Finisar Corporation | Vertical cavity surface emitting laser having strain reduced quantum wells |
-
1997
- 1997-06-06 TW TW086107863A patent/TW332930B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8168456B2 (en) | 2004-10-01 | 2012-05-01 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
US8451875B2 (en) | 2004-10-01 | 2013-05-28 | Finisar Corporation | Vertical cavity surface emitting laser having strain reduced quantum wells |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |