TW332930B - The vertical cavity surface-emitting laser of GaN - Google Patents

The vertical cavity surface-emitting laser of GaN

Info

Publication number
TW332930B
TW332930B TW086107863A TW86107863A TW332930B TW 332930 B TW332930 B TW 332930B TW 086107863 A TW086107863 A TW 086107863A TW 86107863 A TW86107863 A TW 86107863A TW 332930 B TW332930 B TW 332930B
Authority
TW
Taiwan
Prior art keywords
layer
gan
emitting laser
cavity surface
vertical cavity
Prior art date
Application number
TW086107863A
Other languages
Chinese (zh)
Inventor
Guang-Gwo Shyy
Ming-Hwang Horng
Yi-Ren Zou
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW086107863A priority Critical patent/TW332930B/en
Application granted granted Critical
Publication of TW332930B publication Critical patent/TW332930B/en

Links

Abstract

A vertical cavity surface-emitting laser of GaN, it includes: Form the 1st reflection layer at one side of substrate; Form buffer layer at the other side of substrate; Form N-GaN layer on buffer layer, and form 1st electrode on N-GaN; Form 1st current limiting layer on N-GaN; Form 1st cladding layer on 1st current limiting layer; Form active layer on 1st cladding layer; Form 2nd cladding layer on active layer; Form 2nd current limiting layer on 2nd cladding layer; Form P-GaN layer on 2nd current limiting layer, and already form 2nd electrode on P-GaN layer; Form 2nd reflection layer on P-GaN.
TW086107863A 1997-06-06 1997-06-06 The vertical cavity surface-emitting laser of GaN TW332930B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086107863A TW332930B (en) 1997-06-06 1997-06-06 The vertical cavity surface-emitting laser of GaN

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086107863A TW332930B (en) 1997-06-06 1997-06-06 The vertical cavity surface-emitting laser of GaN

Publications (1)

Publication Number Publication Date
TW332930B true TW332930B (en) 1998-06-01

Family

ID=58262829

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086107863A TW332930B (en) 1997-06-06 1997-06-06 The vertical cavity surface-emitting laser of GaN

Country Status (1)

Country Link
TW (1) TW332930B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8168456B2 (en) 2004-10-01 2012-05-01 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US8451875B2 (en) 2004-10-01 2013-05-28 Finisar Corporation Vertical cavity surface emitting laser having strain reduced quantum wells

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8168456B2 (en) 2004-10-01 2012-05-01 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US8451875B2 (en) 2004-10-01 2013-05-28 Finisar Corporation Vertical cavity surface emitting laser having strain reduced quantum wells

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees