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Priority claimed from JP8263906Aexternal-prioritypatent/JP2850883B2/en
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Publication of TW329541BpublicationCriticalpatent/TW329541B/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
A method for forming a refractory metal silicide layer on a silicon surface comprising the following steps: A first layer made of a refractory metal is formed on the silicon surface; A second layer is formed which extends over the first layer and is made of a nitrogen containing refractory metal, wherein the composition ratio of nitrogen to the refractory metal is lower than 1:1; and The silicon surface and the first and the second layers are subjected to a heat treatment in an non-nitrogen gas atmosphere at a pressure not lower than super-high vacuum to form a refractory metal silicide layer on the interface between the silicon surface and the first layer.
TW085113222A1996-10-041996-10-28Refractory metal silicide layer forming method
TW329541B
(en)