TW324833B - Method for making transistor - Google Patents

Method for making transistor

Info

Publication number
TW324833B
TW324833B TW085114247A TW85114247A TW324833B TW 324833 B TW324833 B TW 324833B TW 085114247 A TW085114247 A TW 085114247A TW 85114247 A TW85114247 A TW 85114247A TW 324833 B TW324833 B TW 324833B
Authority
TW
Taiwan
Prior art keywords
making transistor
amorphous silicon
forming
vacuum
crystallized
Prior art date
Application number
TW085114247A
Other languages
Chinese (zh)
Inventor
Jun Togawa
Michio Ishikawa
Kazuyuki Ito
Yukinori Hashimoto
Takeshi Komezaki
Kyuzo Nakamura
Noriaki Tani
Original Assignee
Ulvac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Corp filed Critical Ulvac Corp
Application granted granted Critical
Publication of TW324833B publication Critical patent/TW324833B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A method for forming polycrystalline silicone thin film transistor, comprising forming an amorphous silicon on the substrate in vacuum state. The amorphous silicon is continuously radiated with laser beam in the vacuum to laser annealing and crystallized.
TW085114247A 1995-11-21 1996-11-20 Method for making transistor TW324833B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30303895A JPH09148246A (en) 1995-11-21 1995-11-21 Method for forming polycrystal silicon and formation device

Publications (1)

Publication Number Publication Date
TW324833B true TW324833B (en) 1998-01-11

Family

ID=17916182

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085114247A TW324833B (en) 1995-11-21 1996-11-20 Method for making transistor

Country Status (3)

Country Link
JP (1) JPH09148246A (en)
KR (1) KR100221352B1 (en)
TW (1) TW324833B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001023918A (en) 1999-07-08 2001-01-26 Nec Corp Semiconductor thin-film forming apparatus
JP3491571B2 (en) 1999-07-13 2004-01-26 日本電気株式会社 Method of forming semiconductor thin film
JP4914573B2 (en) 2005-02-25 2012-04-11 キヤノンアネルバ株式会社 Method of manufacturing field effect transistor having high dielectric gate insulating film and metal gate electrode

Also Published As

Publication number Publication date
KR100221352B1 (en) 1999-09-15
KR970027376A (en) 1997-06-24
JPH09148246A (en) 1997-06-06

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent