318214 經濟部中央標準局貝工消费合作社印裝 A 7 B7 五、發明説明（I ) 詳細說明： 本發明是關於一種積體電路的製程，尤指一種改良之 半透明相位移光罩(attenuated phase shift mask ; APSM)的製 造方法，藉由使用高感度光阻和保護膜，可以減少製程步 驟和時間。 在積體電路的製程技術中，必須在晶圓上刻劃各種圖 案’以製備半導體元件，此刻劃圖案的技術便是微影技 術，微影技術是將光罩上的圖案投射到晶圓上，隨著積體 電路的集積密度增加，光罩的解析度就變得越來越重要， 傳統的光罩僅是晶圓上畫分爲透光或不透光的域，使晶 圓上的光阻依所需的圖案曝光，來達到刻劃圖案的目的， 如圖1A所示，在傳統光罩1鄰近的兩個透光區域a，經光照 射後在光罩上的電場相位2相同，但是其投射在晶圓的電 場分佈3，和投射在晶圓的電場強度分佈4，經過干渉效 應後，就無法產生很淸楚的圖案，使得在晶圓上圖案的解 析度變差。 圖1B則顯示一相位移光罩(PSM)5的圖案，在兩相鄰透 光區域之一側，加上一層相位移層b，使得兩者在光罩上的 電場相位6相反，進而造成其在晶圓上的電場分佈7亦相 反，經過干涉效應後，使在晶圓中間的電場強度分佈8爲 零，如此就能提高在晶圓上圖案的解析度，這便是相位移 光罩的原理。 另一種相位移光罩，是使用半透明的材料製作光罩， 如圖2所示，讓光在經過光罩11時部份通過，使透光與半 (請先閲讀背面之注意事項再填寫本頁)318214 Printed by the Beigong Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A 7 B7 V. Description of the invention (I) Detailed description: The present invention relates to a process of integrated circuits, especially an improved translucent phase shift mask (attenuated phase shift mask; APSM) manufacturing method, by using high-sensitivity photoresist and protective film, can reduce the process steps and time. In the process technology of integrated circuits, various patterns must be scribed on the wafer to prepare semiconductor devices. The technique of scoring the pattern is lithography, which is to project the pattern on the photomask onto the wafer As the accumulation density of integrated circuits increases, the resolution of the photomask becomes more and more important. The traditional photomask is only divided into transparent or opaque domains on the wafer, so that the wafer The photoresist is exposed according to the desired pattern to achieve the purpose of scribing the pattern. As shown in FIG. 1A, in the two light-transmitting areas a adjacent to the conventional mask 1, the electric field phase 2 on the mask after light irradiation The same, but the electric field distribution 3 projected on the wafer and the electric field intensity distribution 4 projected on the wafer, after the interference effect, can not produce a very clear pattern, making the resolution of the pattern on the wafer worse. Fig. 1B shows a pattern of a phase shift mask (PSM) 5, a phase shift layer b is added on one side of two adjacent light-transmitting areas, so that the phases of the electric field 6 on the mask are opposite, resulting in The electric field distribution 7 on the wafer is also opposite. After the interference effect, the electric field intensity distribution 8 in the middle of the wafer is zero, so that the resolution of the pattern on the wafer can be improved. This is the phase shift mask. Principle. Another type of phase shift mask is to use a translucent material to make the mask. As shown in Figure 2, let the light partially pass through the mask 11 to make the light transmissive and half (please read the precautions on the back before filling in (This page)
318214 經濟部中央樣準局貝工消費合作社印聚 A7 B7 五、發明説明（上） 透光部份其相位相差180，在光罩上的電場相位12，如圖2 所示。而造成晶圓上的電場強度分布13有明顯差異，可以 提高晶圓上圖案的解析度。但是半透明相位移光罩，在光 源下的透光率較習知完全不透光的光罩，其透光率高。在 光源波長爲600奈米(nm)時，氮氧矽化銷(MoSiON)的透光率 大於30%，在做步進對準時，由於明暗對比太弱，使光罩 對準時不容易對準，於是雙層半透明相位移光罩有實際上 的需要，用第二層光罩當作步進對準之用，使光罩對準能 更方便快速。第一層光罩是用半透明材料製成，在其上刻 劃要投影到晶圓的圖案。 按，傳統之雙層半透明相位移光罩的製程，具有相關 步驟，通常係使用石英、氮氧矽化鉬膜和鉻膜的結構，首 先，在絡膜上塗佈感光度較低的電子束光阻，然後對光阻 進行曝光。再對光阻作顯影處理、烤乾和修整。然後，依 照光阻的圖案對鉻膜作濕式蝕刻。在蝕刻後用去離子水(DI water)做光罩淸潔處理，再對氮氧矽化鉬膜進行乾式蝕刻， 而得到所需的圖案。接著去除鉻膜表面的光阻，並對光罩 表面做淸潔處理，接著塗佈第二光阻，對第二光阻作曝 光、顯影和烤乾，然後對絡膜作濕式蝕刻，得到想要的圖 案。最後，去除鉻膜上的光阻，並且對光罩做淸潔處理， 以及對光罩的缺陷做檢查和修整° 由於該傳統製程需經過兩次曝光’所需時間較長而且 無法中途檢查出光罩的缺陷’因此’乃導致光罩的良率相 對地較低。 (請先閲讀背面之注意事項再填寫本頁) ,4- -訂 本紙張尺度適用中國國家梯準（CNS ) A4规格（210X297公釐） 經濟部中央標準局貝工消費合作社印裝 A7 ---------- B7 _'__ 五、發明説明（2)) 本發明之主要目的在於製造多層半透明相位移光罩’ 改善傳統方法的光罩製作流程，可以縮短製程時間，同時 提高光罩的良率。 本發明之次要目的在於製造多層半透明相位移光罩’ 在製程流程中使用保護膜，可以減少一次光罩對準和曝 光，使光罩的製造程序大幅簡化。 本發明之又一目的在於製造多層半透明相位移光罩’ 改善傳統方法的光罩製作流程，在製程流程中使用高感度 光阻，可以減少曝光時間，以縮短製程時間。 (一) 圖示的簡單說明： 圖1A與圖1B是習知技術中穿透式光罩和相位移光罩的 特性比較示意圖。 圖2是顯示半透明相位移光罩的電場相位和在晶片上電 場強度分佈圖。 圖3A至31是本發明的製程技術示意圖。 (二) 編號說明： I- 傳統光罩 2_傳統光罩上的電場相位 3- 晶圓上的電場分布 4- 晶圓上的電場強度分布 5- 相位移光罩 6_相位移光罩上的電場相位 7#目位移光罩上的電場分布 8-晶圓上的電場強度分布 II- 半透明相位移光罩 I — m ii I! r I I 1--丨- 1 I (請先w讀背面之注^^項再填寫本頁) 訂 本紙乐尺度適用中國國家梯準（CNS ) A4規格（2丨〇Χ297公着） 經濟部中央標準局員工消費合作社印製 318214 at B7 五、發明説明（4·) 12- 半透明相位移光罩上的電場相位 13- 晶圓上的電場強度分布 31- 石英 32- 氮氧矽化鉬膜 33_鉻膜 34-第一光阻 36- 保護膜 37- 第二光阻 首先，請參閱圖3所示係爲本發明製作雙層半透明相位 移光罩之有關步驟，作一詳細敘述如下： 請參閱圖3Λ，該雙層半透明相位移光罩係使用石英材 料作爲基板31，然後在基板31的表面沉積一層氮氧矽化鉬 膜32和鉻膜33作爲光罩基體，其中該氮氧矽化鉬膜32是作 爲本發明的第一透射率層而鉻膜33是作爲第二透射率層。 沉積在石英基板31之上的氮氧矽化鉬膜32的膜厚係介 於1200到1600埃之間，氮氧矽化鉬膜32的沉積方法是使用 濺鍍方法。鉻膜33的沉積方法是使用濺鍍方法，沉積在氮 氧矽化鉬膜32之上的鉻膜33的膜厚約爲1000埃左右。 然後，在鉻膜33的表面塗佈一層第一光阻34，第一光 阻34可以使用高感度光阻聚r嫌（poly-(butene-l sulfone); PBS)，第一光阻34是使用旋塗式方法塗佈於鉻膜33表面， 第一光阻34的厚度係介於2500到4000埃之間。在這一步驟 中使用的第一光阻34可以是高感度光阻，由於在下面步驟 本紙張尺度適用中國國家榡準（CNS ) A4規格（2丨0X297公釐） (請先閲讀背面之注意事項再球寫本頁) ,4- 訂_ 經濟部中央樣準局貝工消費合作杜印裝 A7 - . B7 五、發明説明（5) ~ ~ 的乾式触刻過程是自我對準式，不必使用第一光阻34作爲 光罩’所以不必顧慮第一光阻34在後續製程中對乾式蝕刻 製程的承受能力。相對之，習知技術由於使用第一光阻續 行乾蝕刻’故必須使用能耐受乾蝕刻之光阻，而無法選用 高感度光阻。於本發明製程中使用高感度的第一光阻34， 曝光時間約爲較傳統製程減少一半以上(曝光時間視圖形而 定)。 然後’使用濕式方法對曝光後之第一光阻34作顯影處― 理’在第一光阻34得到所需的圖案。如圖3A所示，對第一 光阻34作顯影之液體爲DP-13。 在對第一光阻34作顯影處理時，可去除已被曝光的部 份，留下部份的第一光阻34A覆蓋住要被保護的鉻膜33，如 圖3B所示。接著，將第一光阻34A烤乾，再利用電漿修整 第一光阻34A的突出毛邊部份，使第一光阻34A的圖案更淸 楚，以便於在以後對鉻膜33進行蝕刻後，能夠得到更淸楚 的鉻膜圖案。 請參閱圖3C，依照第一光阻34A的圖案，對絡膜33作 第一次濕式蝕刻處理，得到與第一光阻34A相同圖案的鉻膜 33A，如圖3C所示。其中，濕式蝕刻處理是使用CR-7作爲 飽刻液。 請參閱圖3D，使用雙氧水(H202)加上硫酸(H2S04)的濕 式去光阻製程，將第一光阻34A從鉻膜33A的表面剝除。然 後，使用雙氧水(H202)、氨水(NH4OH)和水(H20)的混和溶 液，放入超音波振盪器中，對光罩的表面作淸潔處理，以318214 Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (Part 1) The phase difference of the light-transmitting part is 180, and the phase of the electric field on the reticle is 12, as shown in Figure 2. As a result, the electric field intensity distribution 13 on the wafer is significantly different, which can improve the resolution of the pattern on the wafer. However, the translucent phase shift mask has a higher light transmittance under the light source than conventional masks that are completely opaque. When the light source wavelength is 600 nanometers (nm), the transmittance of oxynitride pin (MoSiON) is greater than 30%. When doing step alignment, the contrast between light and dark is too weak, so it is not easy to align the mask. Therefore, the double-layer semi-transparent phase shift mask has practical needs, and the second layer mask is used for step alignment, so that the mask alignment can be more convenient and fast. The first photomask is made of translucent material, and the pattern to be projected onto the wafer is scribed on it. According to the traditional double-layer translucent phase shift mask process, there are related steps, usually using quartz, molybdenum oxynitride film and chromium film structure. First, coat the electron beam with lower sensitivity on the complex film Photoresist, and then expose the photoresist. The photoresist is then developed, baked, and trimmed. Then, the chromium film is wet-etched according to the pattern of the photoresist. After etching, deionized water (DI water) is used to clean the photomask, and then the molybdenum oxynitride film is dry-etched to obtain the desired pattern. Then remove the photoresist on the surface of the chromium film, clean the surface of the photomask, then apply the second photoresist, expose, develop and bake the second photoresist, and then wet etch the complex film to obtain The desired pattern. Finally, the photoresist on the chromium film is removed, and the photomask is cleaned, and the defects of the photomask are inspected and repaired. Because the traditional process requires two exposures, it takes a long time and the light cannot be checked midway. The defect of the mask 'therefore' is that the yield of the photomask is relatively low. (Please read the precautions on the back before filling out this page), 4--The standard paper size is applicable to China National Standard (CNS) A4 specification (210X297mm) Printed A7 by Beigong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs- -------- B7 _'__ Fifth, the description of the invention (2)) The main purpose of the present invention is to manufacture a multi-layer translucent phase shift photomask 'to improve the traditional photomask manufacturing process, which can shorten the process time and at the same time Improve the yield of the photomask. The secondary objective of the present invention is to manufacture a multi-layer translucent phase-shift photomask. The use of a protective film in the manufacturing process can reduce primary photomask alignment and exposure, and greatly simplify the photomask manufacturing process. Another object of the present invention is to manufacture a multi-layer semi-transparent phase shift mask 'to improve the mask manufacturing process of the conventional method. The use of high-sensitivity photoresist in the manufacturing process can reduce the exposure time and shorten the manufacturing time. (1) Brief description of the figures: Figures 1A and 1B are schematic diagrams comparing the characteristics of transmissive masks and phase shift masks in the conventional technology. Fig. 2 is a diagram showing the electric field phase of the translucent phase shift mask and the electric field intensity distribution on the wafer. 3A to 31 are schematic diagrams of the process technology of the present invention. (2) Number description: I- traditional mask 2_ electric field phase on traditional mask 3- electric field distribution on wafer 4- electric field intensity distribution on wafer 5- phase shift mask 6_ phase shift mask Electric field phase 7 # electric field distribution on mesh shift mask 8- electric field intensity distribution on wafer II- translucent phase shift mask I — m ii I! R II 1-- 丨-1 I (please read w first Note ^^ on the back and then fill out this page) The standard paper music standard is applicable to China National Standards (CNS) A4 specification (2 丨 〇297) Published by the Ministry of Economic Affairs Central Standards Bureau employee consumer cooperatives 318214 at B7 V. Invention description (4 ·) 12- Electric field phase on the translucent phase shift mask 13- Electric field intensity distribution on the wafer 31- Quartz 32- Molybdenum oxynitride film 33_ Chromium film 34- First photoresist 36- Protective film 37 -Second photoresist First, please refer to FIG. 3 for the steps involved in manufacturing a double-layer translucent phase shift mask of the present invention. A detailed description is as follows: Please refer to FIG. 3Λ, the double-layer translucent phase shift mask A quartz material is used as the substrate 31, and then a layer of molybdenum oxynitride film 32 and chromium film 33 is deposited on the surface of the substrate 31 Is a mask substrate, wherein the molybdenum silicide oxynitride film 32 of the present invention is to make the transmittance of the first layer is a chromium film 33 as a second transmittance layer. The thickness of the molybdenum oxynitride film 32 deposited on the quartz substrate 31 is between 1200 and 1600 angstroms. The deposition method of the molybdenum oxynitride film 32 is a sputtering method. The deposition method of the chromium film 33 is a sputtering method, and the thickness of the chromium film 33 deposited on the molybdenum oxynitride film 32 is about 1000 angstroms. Then, a layer of first photoresist 34 is coated on the surface of the chromium film 33. The first photoresist 34 can use high-sensitivity photoresist (poly- (butene-l sulfone); PBS), and the first photoresist 34 is The surface of the chromium film 33 is coated by a spin coating method, and the thickness of the first photoresist 34 is between 2500 and 4000 angstroms. The first photoresist 34 used in this step may be a high-sensitivity photoresist, because in the following steps, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0X297mm) (please read the note on the back first Matters will be written on this page), 4-Subscribe_Ministry of Economic Affairs, Central Bureau of Standards, Beigong Consumer Cooperation Du Printing Equipment A7-. B7 V. Invention description (5) ~ ~ The dry touch engraving process is self-aligned and does not need to The first photoresist 34 is used as a photomask, so there is no need to worry about the ability of the first photoresist 34 to withstand the dry etching process in the subsequent process. In contrast, the conventional technique uses a first photoresist for continuous dry etching. Therefore, a photoresist that can withstand dry etching must be used, and a high-sensitivity photoresist cannot be used. When the first photoresist 34 with high sensitivity is used in the process of the present invention, the exposure time is about more than half that of the conventional process (the exposure time depends on the shape of the view). Then, "wet-process the first photoresist 34 after exposure-processing" to obtain a desired pattern on the first photoresist 34. As shown in FIG. 3A, the liquid for developing the first photoresist 34 is DP-13. When developing the first photoresist 34, the exposed portion may be removed, leaving a portion of the first photoresist 34A to cover the chromium film 33 to be protected, as shown in FIG. 3B. Next, the first photoresist 34A is baked, and then the protruding burrs of the first photoresist 34A are trimmed with plasma to make the pattern of the first photoresist 34A more clear, so that the chromium film 33 can be etched later , You can get a more chromium film pattern. Referring to FIG. 3C, according to the pattern of the first photoresist 34A, the first wet etching process is performed on the complex film 33 to obtain a chromium film 33A having the same pattern as the first photoresist 34A, as shown in FIG. 3C. Among them, the wet etching process uses CR-7 as a saturating solution. Referring to FIG. 3D, a wet photoresist process using hydrogen peroxide (H202) and sulfuric acid (H2S04) is used to strip the first photoresist 34A from the surface of the chromium film 33A. Then, use a mixed solution of hydrogen peroxide (H202), ammonia (NH4OH) and water (H20), put it in the ultrasonic oscillator, and clean the surface of the photomask to
m m · --------/ 裝！ C請先閲讀背面之注項再填寫本頁) 、π. 1^1 In a 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（6) 避免在鉻膜33A表面留下微小粒子，造成在後續的乾式触刻 過程中在光罩上留下缺陷，以致於降低光罩的良率。在習 知技術中由於以第一光阻續行乾蝕刻，故在此階段無法進 行透澈的淸潔步驟。而本案能以前述h2o2+nh4oh+h2o之 溶液進行透澈淸洗，亦屬重大效益之一。 然後對鉻膜33A作缺陷的檢查與修整。利用顯微鏡檢查 光罩’檢查鉻膜33A的表面，並對缺陷作修整，這一步驟可 以減少在後續的乾式蝕刻過程中，在氮氧矽化鉬膜32上造 成的缺陷，以致於降低光罩的良率。 請參閱圖3E，將光罩表面做淸潔處理後，直接以鉻膜 33A圖案作爲遮蔽罩(mask)，使用低功率的反應式離子蝕刻 方法，對氮氧矽化鉬膜32做乾式蝕刻，得到所需的圖案， 如圖3E所示。其中，電漿的功率係介於50到100瓦特之間。 請參閱圖3F，使用一個保護膜(pellide)36，覆蓋在鉻膜 33A上，遮蓋住想要去除的鉻膜33A部份。保護膜36的結構 是使用鋁合金外框，在外框的表層放置一層塑膠膜，可以 防止光阻滲透過去，保護膜36的尺寸大小視光罩的大小而 定，只需要可遮住氮氧矽化鉬膜32B的區域。對準保護膜36 的方法，是使用一個基座，將保護膜36放置在基座上，在 基座上有保護膜36的固定位置，也有光罩的固定位置，再 將光罩具有圖案的一面，覆蓋在保護膜36上面，保護膜36 的外框具有一黏性材料，保護膜36對準光罩後，可將光罩 取出進行塗佈光阻的製程。然後，在保護膜36的周圍塗佈 第二光阻37，用來保護住想要在後續蝕刻過程中留下的部 本紙張尺度適用中國國家標準（CNS > A4規格（210X297公釐） !11-—11& 良— I — — II 丁 «3J-a (請先閲讀背面之注$項再填寫本頁) 經濟部中央樣準局負工消費合作社印^ A7 •_______B7___ 五、發明説明（q) 份鉻膜33。此一使用保護罩而在其周圍上光阻的步驟爲本 案一大重點，可免除微影製程所需更換光罩、對準、曝 光、顯影等繁複的眾多步驟’大幅提高生產效率。 請參閱圖3G，移去保護膜％，然後將第二光阻37烤 乾。 請參閱圖3H，照第二光阻37的圖案，對鉻膜33A作第 二次濕式飽刻處理，使用溶液作爲触刻液，得到所需 的圖案。所留下的路膜33B ’僅是在步進對準中用做對準之 用。 請參胃圖31，去除第二光阻及淸洗光罩表面，去除光 阻及表面的方法，與第一光阻的方法相同，然後對光 罩做淸潔處理，然後，留下僅是光罩部份的膜層。最後檢 查和修整光覃的缺陷。 其中，第一透射率層是使用相位移材料製作而成’當 光經過第一透射率層後，便會產生180度的相位移。光罩 所需的圖案是製作在第一透射率層之上，於是，在光罩圖 塞組锺先鹿域的相鄰處，在光罩上的相位相差180度，投 =二場強度分罐近零。謝乍第二漏麵的 目的是作爲對準之用，在對鉻膜％進行第一次餓刻時，同 時在銘膜33 Α的的表面製作對準記號’然後在以鉻膜33Α 對氮氧砂化鉬膜32進行餓刻時，也同時在氮氧砍化鉬膜32 的表面製作對準記號，再對銘膜33 Α進行第二次飩刻時， 僅留下具有對準記號部份的路膜33 B，在使用光罩對晶圓 進行微影過程時，便利用在路膜33B上的對準記號’作爲 -----„---!裝 |_ (請先閲讀背面之注項再填寫本頁) 訂 , I HL· 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央樣準爲貝工消费合作社印製 (請先聞讀背面之注意事項再填寫本頁)m m · -------- / Outfit! C, please read the notes on the back and then fill out this page), π. 1 ^ 1 In a The paper size is applicable to China National Standard (CNS) A4 specification (210X297mm) A7 B7 printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (6) Avoid leaving tiny particles on the surface of the chromium film 33A, causing defects to be left on the photomask during the subsequent dry etching process, so as to reduce the yield of the photomask. In the conventional technology, since the dry etching is continued with the first photoresist, it is not possible to perform a transparent cleaning step at this stage. In this case, the solution of h2o2 + nh4oh + h2o can be cleaned thoroughly, which is also one of the major benefits. Then, the chromium film 33A is inspected and repaired for defects. Use a microscope to inspect the photomask ', inspect the surface of the chromium film 33A, and repair the defects. This step can reduce the defects caused on the molybdenum oxynitride film 32 in the subsequent dry etching process, so as to reduce the photomask Yield. Please refer to FIG. 3E, after the photomask surface is cleaned, the chromium film 33A pattern is directly used as a mask, and the low power reactive ion etching method is used to dry etch the molybdenum oxynitride film 32 to obtain The required pattern is shown in Figure 3E. Among them, the power of the plasma is between 50 and 100 watts. Referring to FIG. 3F, a pellide 36 is used to cover the chromium film 33A to cover the portion of the chromium film 33A to be removed. The structure of the protective film 36 is to use an aluminum alloy frame. A plastic film is placed on the surface of the outer frame to prevent the photoresist from penetrating in the past. The size of the protective film 36 depends on the size of the photomask, and only needs to cover the silicon oxide silicon The area of the molybdenum film 32B. The method of aligning the protective film 36 is to use a base, place the protective film 36 on the base, and there are a fixed position of the protective film 36 and a fixed position of the photomask on the base, and then the photomask has a pattern On one side, covering the protective film 36, the outer frame of the protective film 36 has an adhesive material. After the protective film 36 is aligned with the photomask, the photomask can be taken out to apply a photoresist process. Then, the second photoresist 37 is coated around the protective film 36 to protect the paper size that you want to leave in the subsequent etching process. The Chinese national standard (CNS > A4 specification (210X297mm) is applicable! 11-—11 & Liang—I——II Ding «3J-a (please read the $ item on the back and then fill in this page) Printed by the Consumer Labor Cooperative of the Central Prototype Bureau of the Ministry of Economic Affairs ^ A7 • _______ B7___ V. Description of invention ( q) Part of the chromium film 33. This step of using a protective cover and applying a photoresist around it is a major focus of this case, which can eliminate the complicated steps of photomask replacement, alignment, exposure, and development required for the lithography process. Significantly improve production efficiency. Please refer to Figure 3G, remove the protective film%, and then bake the second photoresist 37. Please refer to Figure 3H, according to the pattern of the second photoresist 37, the second wet type of the chromium film 33A Saturation process, using the solution as a contact liquid, to obtain the desired pattern. The remaining film 33B 'is only used for alignment in step alignment. Please refer to the stomach Figure 31, remove the second light The method of blocking and washing the surface of the photomask, removing the photoresist and the surface, and the method of the first photoresist The same, then clean the photomask, and then leave only the film part of the photomask. Finally, inspect and repair the defects of Guangqin. Among them, the first transmittance layer is made of phase shift material. When the light passes through the first transmittance layer, it will produce a 180-degree phase shift. The required pattern of the photomask is made on the first transmittance layer. , The phase difference on the reticle is 180 degrees, the projection = the two-field intensity sub-tank is nearly zero. Xie Zha ’s second leaky surface is intended for alignment purposes. When performing the first hungry etching of the chromium film Make an alignment mark on the surface of the Ming film 33 Α 'and then etch the molybdenum oxynitride film 32 with the chromium film 33Α, and also make an alignment mark on the surface of the molybdenum oxynitride film 32, and then When the second engraving of the inscription film 33 Α is performed, only the path film 33 B with the alignment marks is left. When the photomask is used to perform the lithography process on the wafer, the pair of film films 33B is conveniently used. The quasi-mark "as -----" ---! Installed | _ (please read the notes on the back and then fill in this page). Order, I HL · This paper The Zhang scale applies the Chinese National Standard (CNS) A4 specification (210X297 mm). The central sample of the Ministry of Economic Affairs is printed by the Beigong Consumer Cooperative (please read the precautions on the back before filling this page)
光罩與晶圓的對準之用。因此，鉻膜33B的位置不需要相 當準確，在第二透射率層的第二次蝕刻時，僅需留下有對 準記號的部份，即可使用第二透射率層作爲對準光罩之 用。. 本發明係採用改良後新之製程，以改善多層半透明相 位移光罩的製造，該創新的製程較傳統方法來的快速，僅 需作光罩對準和曝光一次，而且可以使用高感度的光阻來 節省製程時間，在製程的流程中，可以檢查並修整光罩上 的缺陷，大幅增加光罩的良率。 本發明係透過具體實施例加以敘述，說明本發明的原 則和精神，應可瞭解本發明並不侷限於所揭露的具體實施 例，因此，在本發明之原則和範圍底下所作任何相關細節 上之變化，都應視爲本發明的進一步實施例。Alignment of photomask and wafer. Therefore, the position of the chromium film 33B does not need to be quite accurate. In the second etching of the second transmittance layer, only the portion with the alignment mark needs to be left, and the second transmittance layer can be used as the alignment mask For the purpose. The present invention adopts an improved new process to improve the manufacture of multi-layer translucent phase shift masks. This innovative process is faster than traditional methods. It only needs to align and expose the mask once, and can use high sensitivity. The photoresist can save the process time. In the process of the process, you can check and repair the defects on the photomask, which greatly increases the yield of the photomask. The present invention is described through specific embodiments to illustrate the principles and spirit of the present invention. It should be understood that the present invention is not limited to the disclosed specific embodiments. Therefore, any relevant details made under the principles and scope of the present invention Changes should be considered as further embodiments of the present invention.
本紙張尺度適用中國國家標準（CNS ) A4規格（2丨〇乂297公釐）The size of this paper is in accordance with the Chinese National Standard (CNS) A4 specification (2mm 297mm)