經濟部中央樣準局貝工消费合作社印裂 B7 五、發明説明（） 〔相互參考對相關申請〕 本案係一申請案號：08/634，449提出於1 99 6年4月1 8日的一部分接攮案，且此申請專利範園 主張美國臨時申請案號：6 0 / 0 0 5，0 1 3提出於1 995年1 ◦月10日。 〔發明背景〕 1 ·發明領域： 本發明閭於一新的室流出物監測糸統與一半導體處理 系統，其包括一吸收光譜學測量系統用Μ測1一氣態分子 種類。本發明亦相«於在本發明的室流出物監測糸統與本 發明的一半導體處理系統中檢測一氣態分子種類的一方法 0 2 ·相關技術說明： 於半導體積體霣路（ICs)之製造中，重要的是於 該處理室中分子雜質有一非常低分壓。特別地，水蒸氣係The Central Sample Bureau of the Ministry of Economic Affairs printed the B7. 5. Description of the invention () [Reference to related applications] This case is an application No .: 08/634, 449 filed on April 18, 1996 A part of the case was filed, and this application for a patent Fan Yuan advocated the provisional US application number: 6 0/0 0 5, 0 1 3 was filed on January 10, 1995. [Background of the invention] 1. Field of the invention: The present invention resides in a new chamber effluent monitoring system and a semiconductor processing system, which includes an absorption spectroscopy measurement system for measuring a gaseous molecular species with M. The present invention is also comparable to a method for detecting a gaseous molecular species in the chamber effluent monitoring system of the present invention and a semiconductor processing system of the present invention. 0 2 · Description of related technologies: In semiconductor integrated circuits (ICs) In manufacturing, it is important that the molecular impurities in the processing chamber have a very low partial pressure. In particular, the water vapor system
If 特別地不利於在該處理工具中製造元件。例如，水蒸氣於 一鋁蝕刻室中必須被消除或最小化為了達到再製造胜刻製 程。而且，當在處理期間常常遇到水蒸氣·該元件金龎曆 之腐蝕係被加速，本質上減少產霣。 分子雜質能被引入該處理室以許多方式。例如，分子 雜質能出現於該處理氣體被引入該室在處理期間。同時， 分子雑質諸如水氣係出現於空氣中*該室係被曝露在該處 理工具保養期間。空氣與水亦能被引人該盧理室每當一基 本紙張又度適用中國國家揉準（CNS ) A4规格（210X297公釐） i In I I I 、I ^ n i— 線( (請先M讀背面之注意事項再填寫本頁) 經濟部中央揉準局負工消費合作社印装 A7 B7 五、發明説明（> ) 質係被引入該室。分子雜質亦能被排放從該等基質它們本 身在引入該處理室後或可能從它們本身處裡情形產生。例 如，在等離子體處理與快速熱處理期間，分子雜質能成為 反應附帶產生之形式或，如在水蒸氣之事例中，能從加熱 該基質與室表面而排放。 分子雜質其係被引入該處理室利用一基質，係通常被 移去由利用一純氣體淨化該室、由抽氣該室、或由連鑛》 壓及抽氣循環。 於室抽氣之事例中，該室內基本臞力係被使用當作該 等分子雜質清除程度的一測1。相反地，當依靠該室淨化 技術，該室係被填滿利用一肫氣髓於一段時間，其係通常 由該操作者經驗決定。 大氣汚染從該處理室清除之程度亦可經由該室内水蒸 氣澹度之測量而決定。此一技術係特別地有用於污染起源 於曝露該處理室至外部大氣在保養期間與從引導一基質進 入該室之事例中。水蒸氣可附著於一處理室内部表面和該 基質之表面。其係出現於大氣中從約1—2%的一ft中， 和係通常最困難的，大氣成分由抽氣或淨化移去。 於當前生產製造之水平中，微粒監測係通常被使用於 監測微粒於於原位中之污染。其係已知於該處理工具之排 氣管媒中設置微粒監測。（見，例如，P‘Borden ，『監測興空製程設備：於原位監測中一設計與規格』， 「微污染J ，9 (1)，第 43 - 47 頁（1991 年） 本紙張尺度逍用中困國家揉準（CNS ) A4规格（210X297公釐） ----------^------訂I.^-----線「 (請先H讀背面之注意事項再填寫本頁) 經濟部中央揉準局貝工消费合作杜印製 317642_^_ 五、發明説明（々） )。雖然這樣的微粒監測或許有用的對於追蹤製程事件， 其導致微粒產生，它們不可被使用於監測分子濃度。 在該等分析工具中，其可被使用於分子汚染之测量係 質量光譜儀中的一型，通常被懕用如一殘留氣體分析儀（ RGA)。（見，例如，D*Lichtman* 『殘留 氣體分析：過去、現在和未來』*J«Vac‘Sci* Technol·， A 8 (3) (1990 年））。霣 量光譜儀一般要求壓力於約1 0 托之範園中，然而半 導鼉處理工具之操作壓力係通常在壓力從約0·1至76 0托之範園中。所以，質ft光譜儀霱要抽氣系統與專用的 真空泵浦。質置光譜儀之结構係通常昂貴且大型。並且· 差動抽氣室其内部該貢量光譜儀係被放置，提供一高程度 殘留水蒸氣，其係很難移去且數種限制該霣量光譜儀之靈 敏度用Μ水蒸氣測置。 光發射光譜學係廣泛地被使用於監測等離子體製程。 本質上，光發射光譜儀可被使用於處理工具中監測分子污 染。然而*該光發射光譜係非常複雜，和此方法不可被使 用於非等離子體製程。 其他光譜之技術已管廣泛被使用於研究狀態以探討製 程化學。見，例如，Dreyfus e t al.，『 低壓等離子體之光診斷』，「純和應用化學J ，57 (9 )卷，第 1265-1276 頁（1985 年））。然而 ，埴些技術一般箱要特殊地被修改處理室和有不常被施加 本紙張尺度適用中國國家梂準（CNS ) A4规格（210X297公釐） ----------Λ------订------線^ (請先閱讀背面之注f項再填寫本頁) 經濟部中央揉準局負工消费合作社印篥 A7 B7 五、發明説明（4 ) 於汚染之研究。例如，由腔内笛射光譜學於原位濕氣監拥 中之可能性己曾被提及通常於此技術的一回顧中。（見， 例如：G*W* Atkinson，Γ水经過腔內笛射光 譜學之高S敏度檢测J ， 「撤污染J ·94會刊規範通訊 ，1 9 9 4 年））〇 最後地，傳統氣Η分析儀已曾被施加至原位分子測量 中，通常用Μ製程執行在或接近大氣壓力。（見，例如： Smoak e t a 1 ·，『氣》控制改菩在產品上J ，「半導體國際」，第87—92頁（1990年6月） )。依據疽樣的技術，處理氣體之一部分係被抽入一探嫌 *然後傅通該樣本至該分析儀，然而，使用一探棒於濕氣 之測量中係不希望的，因為濕氣致使吸附於探棒之表面上 。並且，此途徑通常不實用，例如它需要考慮空間以容纳 該等傳統氣體分析儀。那是眾人皆知的，即，自由空間在 —半導體製造淨化室内部係典型的在一最小的。 一測量該瞬間濕氣灌度與一處理環境之乾嫌降低特性 之方法係被掲示於美國専利攉5，241 ，851 ，Ta pp e t a 1·依據此方法，一濕氣分析儀輪流地從 一處理室取樣該流出物和此無體由一摞準氣體產生器產生 。該檷準氣體產生器之輪出偁被諝整直到該分析儀在滾出 物與檷準氣體流之間指示無任何不同。因為該濕氣成分於 該檷準氣體產生器之輸出中係已知，於該流出物流之程度 可被決定。此糸統，無論如何，係不方便且複雑的，因為 本紙張尺度逍用中國國家梂準（CNS ) Α4规格（210X297公釐） (請先Μ讀背面之注$項再填寫本頁) 訂 n7642五、發明説明（<) A7 B7 它需要 之間實 產生器 為 技術之 測系統 光譜學 時性和 本 一標準氣體產 。並且 理室， 該半導 施切換 至該處 了符合 缺點， ，和特 糸統用 生器和複管路在流出物與檷準氣體流 *有一回流之危險*其從該標準氣艚 經濟部中央標準局貝工消费合作社印装 (請先《讀背面之注f項再填寫本頁) 専致污染。 髑處理工莱 本發明之一目的為 別地一 K檢測 於一半導體處 發明之一另外 測與半導體處理糸統 本發明之其他目 說明、被附加於此之 楚0 [本發明之概要〕 依據本發明之一 提供。該糸統包含一 管線包括一樣本區* 樣本區。 該糸統另外包含 態分子種類。該測量 本區以光通訊，此光 一光束進入該樣本區 且該光束穿遇該樣本 新的半導» 氣態分子雜 理工具中氣 目的為了提 中檢测氣態 的與方面由 附圔與申請 之要求 了提供 處理糸 質，其 態分子 供在本 分子種 常見技 專利範 以及為了克服先前 一新的室流出物監 統，其包括一吸收 將顧及 雜質之 到精準、即 原位決定。 發明的室流出物監 類的一方法_。 蓊中的一個其詳细 圔之回顧將變得濟 第一方面，一室流出物監測系统係被 室有一排氣管線被連接於此。該排氣 其中基本上所有一室流出物亦通遇該 一吸收光譜學測量系統用K檢測一氣 糸統包含一光源與一主偵檢器與該樣 通通一或更多光透射窗。此光源發射 通過一或更多光透射留中的一個，並 區和饑開該樣本區通過一或更多光透 8. 本紙張尺欢逋用中國困家揉準（CNS ) A4规格（210X297公釐） 經濟部中央棵準局員工消费合作杜印装 A7 _B7_ 五、發明说明（k ) 射窗中的一個。該主偵檢器響應於正黻開該樣本區之光束 0 本發明之一第二方面中，一半導體處理糸統係被提供 。該半導體處理糸統包含一處理室用K處理一半導體基霣 。該處理室包含一排氣管線被埋接於此。該排氣管線包括 一樣本區，其中基本上所有一室流出物通過該樣本區。 該處理系铳另外包含一吸收光譜學測量糸統用以測量 一氣態分子種類如上所述並參考該室流出物監測系统。 本發明之一第三方面係於一室流出物中檢測一氣態分 子種類的一方法。於本發明之方法中，一室係被提供，其 有一排氣管媒被連接於此。此排氣管線包括一樣本區。基 本上所有一室流出物係被排除從該室通過該排氣管線並且 係被通過該樣本區。 一氣態分子種類係被檢測由一吸收光讃學方法，藉由 發射一光束從一光源進入該樣本區通過一或更多光透射窗 。該光束穿過該樣本區和離開該樣本區通過一或更多光透 射窗中的一個，和該光束雛開該晶胞通通一或更多光透射 窗中的一個係被檢測。 該等新的糸統與方法顧及精準、即時性與於一室流出 物中氣態分子種類之原位檢測。特別地應用可被發現於半 導鼉製造製程控制中與於危驗的氣體洩漏檢测。例如，視 一半導體製程環境之濕氣澹度與乾煉降低特性而定的時候 可被監測。 -9- 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐) ----------Λ-------訂------線 1 (請先閱讀背面之注$項再填寫本頁) 317642 A7 B7 五、發明説明（·/ ) 〔附圈之簡略說明〕 本發明之目的與優點將爱得清楚，從隨後之較佳實施 例中的詳细說明並配合補充圔式，其中如數字的禰示等於 元件，和其中 圜1A與1 B係依據本發明之室流出物監測糸統之側 截面匾。 圖2A與2B係依據本發明之室滾出物監測系統之横 截面圖。 圖3係一依捶例1水蒸氣溏度與蝕刻處理時間闞係曲 線之圖形；和 圈4係一依據例2—氣化碳灌度與蝕刻處理時間《係 曲線之形。 〔本發明較佳實施例之詳细說明〕 本發明之上面目的已曾被實現，經由使用一光譜方法 以測量分子氣態種類於一室流出物中•其中基本上從該室 之流出物氣體全部流量係直接通過一光譜樣本區。此情形 下，測量随著流出物中實際的雑質含量改變可被造成非常 快的。 當被使用於此，該項「分子氣態種類J 、 「分子雜霣 」和「污染物J係被考慮相等的項目，和遛用一分子氣體 或氣態種類，其係該吸收光謅學測量之目的。而且，當被 使用於此，該項「基本上流出物之全部流量J意思約9 0 一 1 0 0%從該室全部流出物流量之體積。 本紙張尺度遑用中國國家揉率（CNS ) Α4规格（210X297公釐） ----------^------tr------4 (請先Μ讀背面之注$項再填寫本K ) 經濟部中央揉率局貝工消费合作社印裝If is particularly unfavorable for manufacturing components in the processing tool. For example, water vapor in an aluminum etching chamber must be eliminated or minimized in order to achieve a remanufacturing process. Moreover, when water vapor is often encountered during the treatment, the corrosion of the element is accelerated, which substantially reduces production. Molecular impurities can be introduced into the processing chamber in many ways. For example, molecular impurities can occur when the process gas is introduced into the chamber during the process. At the same time, molecular carcinogens such as water vapor are present in the air * The chamber is exposed to maintenance of the treatment tool. Air and water can also be attracted. The Luli room applies the Chinese National Standard (CNS) A4 specification (210X297 mm) whenever a basic paper is used. I In III, I ^ ni— line ((please read the back of M first (Notes to fill out this page) A7 B7 printed by the Ministry of Economic Affairs Central Bureau of Accreditation Consumer Cooperative V. Description of invention (>) The quality system was introduced into this room. Molecular impurities can also be discharged from these substrates themselves After being introduced into the processing chamber, it may arise from their own situation. For example, during plasma treatment and rapid thermal treatment, molecular impurities can become a form of incidental reaction or, as in the case of water vapor, the substrate can be heated It is discharged from the surface of the chamber. Molecular impurities are introduced into the treatment chamber using a substrate, and are usually removed by purifying the chamber with a pure gas, by evacuating the chamber, or by continuous ore pressure and extraction cycles. In the case of room pumping, the basic buoyancy of the room is used as a measure of the degree of removal of these molecular impurities. 1. Conversely, when relying on the room purification technology, the room is filled with a gut In a while The time is usually determined by the operator's experience. The degree of atmospheric pollution removed from the treatment chamber can also be determined by measuring the water vapor depletion in the chamber. This technique is particularly useful for pollution originating from exposure of the treatment chamber To the outside atmosphere during maintenance and from the case of introducing a substrate into the chamber. Water vapor can adhere to the surface of the interior of a processing chamber and the surface of the substrate. It appears in the atmosphere from about 1-2% of a ft In general, the most difficult part is to remove atmospheric components by pumping or purification. At the current manufacturing level, particulate monitoring systems are often used to monitor particulate contamination in situ. It is known from this process Particulate monitoring is installed in the exhaust pipe medium of the tool. (See, for example, P'Borden, "Monitoring Xingkong Process Equipment: Design and Specifications for In-Situ Monitoring", "Micro Pollution J, 9 (1), 43 -47 pages (1991) A4 size (CNX) A4 specification (210X297mm) for the use of this paper standard for easy use in troubled countries ---------- ^ ------ Subscribe I. ^- --- Line "(please read the notes on the back before filling in this page) Ministry of Economic Affairs The quasi-administrative shellfish consumer cooperation Du Printing 317642 _ ^ _ V. Description of the invention (々)). Although such particle monitoring may be useful for tracking process events that lead to the generation of particles, they cannot be used to monitor molecular concentrations. Among other analysis tools, it can be used as a type of mass spectrometer in the measurement of molecular contamination, and is generally used as a residual gas analyzer (RGA). (See, for example, D * Lichtman * "Residual Gas Analysis: Past , Present and future "* J« Vac'Sci * Technol ·, A 8 (3) (1990)). Engraved spectrometers generally require pressure in a fan garden of about 10 Torr, however, the operation of semi-conducting processing tools The pressure system is usually in a fan garden with a pressure from about 0.1 to 760 torr. Therefore, the mass ft spectrometer must have a suction system and a dedicated vacuum pump. The structure of a quality spectrometer is usually expensive and large. And · The differential spectrometer inside the tributary spectrometer is placed to provide a high degree of residual water vapor, which is difficult to remove and several types of sensitivity limiting the spectrometer are measured with M vapor. The Department of Light Emission Spectroscopy is widely used to monitor plasma processes. Essentially, light emission spectrometers can be used in processing tools to monitor molecular contamination. However, the optical emission spectrum is very complicated, and this method cannot be used for non-plasma processes. Other spectroscopy techniques have been widely used in research states to discuss process chemistry. See, for example, Dreyfus et al., "Light Diagnosis of Low-pressure Plasma", "Pure and Applied Chemistry J, Volume 57 (9), pp. 1265-1276 (1985)). However, these technologies generally require The processing room has been specially modified and the paper standard is not often applied. The Chinese National Standard (CNS) A4 specification (210X297mm) ---------- Λ ------ order- ---- Line ^ (Please read note f on the back and then fill in this page) The Ministry of Economic Affairs Central Bureau of Accreditation Consumer Cooperatives Yinzhu A7 B7 V. Invention description (4) For the study of pollution. For example, by the cavity The possibility of internal irradiance spectroscopy in in situ moisture monitoring has been mentioned and is usually mentioned in a review of this technique. (See, for example: G * W * Atkinson, Γ water passes through the cavity irradiance spectroscopy The high sensitivity test of J, "Removal of Pollution J. 94 Journal Proceedings, 1 994 years)) Finally, the traditional gas analyzer has been applied to in-situ molecular measurement, usually used The Μ process is performed at or close to atmospheric pressure. (See, for example: Smoak eta 1 ·, "Qi" control changes to products J, "Semiconductor International", pp. 87-92 Page (June 1990)). According to the gangrene-like technique, a part of the treated gas is drawn into a probe * and then the sample is passed to the analyzer. However, the use of a probe in the measurement of moisture is undesirable because the moisture causes adsorption On the surface of the probe. Also, this approach is usually not practical, for example, it needs to consider space to accommodate such conventional gas analyzers. That is well known, that is, the free space in the semiconductor manufacturing clean room is typically the smallest in the system. A method of measuring the instantaneous moisture content and the reduction of the dryness of the treatment environment is shown in U.S.A. 5,241,851, Ta pp eta 1. According to this method, a moisture analyzer takes turns from The processing chamber samples the effluent and this innocence is generated by a stack of quasi-gas generators. The wheel output of the quasi-gas generator is predetermined until the analyzer indicates no difference between the roll-out and the quasi-gas flow. Since the moisture composition is known in the output of the quasi-gas generator, the degree of the effluent stream can be determined. This system, in any case, is inconvenient and complicated, because the size of this paper is easy to use China National Standards (CNS) Α4 specifications (210X297 mm) (please read the note $ item on the back and fill in this page) n7642 V. Description of the invention (<) A7 B7 It requires a real-time generator for the technical measurement system spectroscopy timing and the standard gas production. And the laboratory, the switch from the semi-conductor to the site meets the shortcomings, and the special generator and the complex pipeline in the effluent and quasi-gas flow * There is a risk of backflow * It is from the Ministry of Economy Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards (please read "Note f on the back and then fill in this page") to cause pollution. An object of the present invention is to additionally test a semiconductor at a semiconductor site. Another test and semiconductor processing system. Other descriptions of the present invention are attached here. [Summary of the Invention] Basis One of the inventions provides. The system includes a pipeline including a sample area. The system also contains molecular species. In this measurement area, optical communication is used. A beam of light enters the sample area and the beam passes through the sample's new semiconductor. It is required to provide treatment materials, the state of which molecules are provided in this molecular common technology patent range and in order to overcome the previous new chamber effluent monitoring, which includes an absorption will take into account the impurities to the precise, ie in situ decision. Invented a method for monitoring chamber effluents. A detailed review of one of the vines will become economical. First, the one-chamber effluent monitoring system is connected to an exhaust line in the chamber. In the exhaust, substantially all of the effluent from one chamber also passes through the absorption spectroscopy measurement system to detect a gas with K. The system includes a light source and a main detector and communicates with one or more light transmission windows. This light source emits one of the light transmission through one or more, and the area and the sample area through the one or more light transmission. 8. This paper ruler Huan used Chinese sleepers (CNS) A4 specifications (210X297 Mm) Employee's consumption cooperation of the Central Bureau of Economic Development of the Ministry of Economic Affairs A7 _B7_ V. Invention description (k) One of the shooting windows. The main detector responds to the beam that is opening the sample area. In a second aspect of the invention, a semiconductor processing system is provided. The semiconductor processing system includes a processing chamber for processing a semiconductor substrate with K. The processing chamber includes an exhaust line buried therein. The exhaust line includes a sample zone where substantially all effluent from one chamber passes through the sample zone. The treatment system additionally includes an absorption spectroscopy measurement system for measuring a gaseous molecular species as described above and with reference to the chamber effluent monitoring system. A third aspect of the invention is a method for detecting a gaseous molecular species in a chamber effluent. In the method of the present invention, a chamber is provided with an exhaust pipe medium connected thereto. This exhaust line includes a local area. Essentially all effluent from one chamber is excluded from the chamber through the exhaust line and is passed through the sample area. A gaseous molecular species is detected by an absorption photometric method, by emitting a light beam from a light source into the sample area through one or more light transmission windows. The light beam passes through the sample area and exits the sample area through one of one or more light transmission windows, and the light beam opens the cell to one of the one or more light transmission windows to be detected. These new systems and methods allow for precise, real-time and in-situ detection of gaseous molecular species in the effluent of a chamber. Special applications can be found in gas leak detection in semiconductor manufacturing process control and in hazardous inspections. For example, it can be monitored depending on the humidity and dry reduction characteristics of a semiconductor process environment. -9- This paper scale is suitable for China National Standard (CNS) A4 specification (210X297mm) ---------- Λ ------- order ------ line 1 (please Read the note $ item on the back first and then fill out this page) 317642 A7 B7 V. Description of the invention (· /) [A brief description of the attached circle] The purpose and advantages of the present invention will be clearly understood, from the following preferred embodiments The detailed description and supplementary formulas are shown, in which, for example, numerals are equal to the components, and in which 1A and 1B are side cross-sectional plaques of the chamber effluent monitoring system according to the present invention. Figures 2A and 2B are cross-sectional views of a chamber rollout monitoring system according to the present invention. Figure 3 is a graph showing the curve of the water vapor density and etching time according to Example 1; and circle 4 is a graph based on Example 2—gasification of carbonized gas and etching time. [Detailed description of preferred embodiments of the present invention] The above object of the present invention has been achieved by using a spectroscopic method to measure molecular gaseous species in the effluent of a chamber • where substantially all of the effluent gas from the chamber The flow rate passes directly through a spectral sample area. In this case, the measurement can be made very fast as the actual carbohydrate content in the effluent changes. When used here, the items "molecular gaseous species J," molecular heterozygote "and" pollutant J series are considered equal items, and the use of a molecular gas or gaseous species, which is measured by the absorption photometry Purpose. And, when used here, the term "essentially the total flow rate of the effluent J means about 90 to 100% of the volume of the total flow rate of the effluent from the chamber. This paper scale uses the Chinese national rubbing rate ( CNS) Α4 specification (210X297mm) ---------- ^ ------ tr ------ 4 (please read the $ item on the back and then fill in this K) Economy Printed and printed by Beigong Consumer Cooperatives
經濟部中央橾準局員工消费合作社印«L A7 _B7____ 五、發明説明（2) 本發明將現在說明並參考圖1 A與2A，其說明側 截面與横截面圖，分別地，一發明的室流出物監測系统。 系统1包含一半専《處理室2，其內部一半導體基霣 3係被設置在一基質固定座4上。一氣體入口5係被提供 用Μ傳送一處理氣觼或多種氣體至處理室2。流出物從處 理室2係被排出通過一排氣開口6於處理室2内然後通通 一排氣管媒7。 依據本發明的一方面，該處理糸統係缠合於執行異空 製程，諸如蝕刻、狼敗、離子佈植或化學氣態沈積（CV D)製程。於此一事例中，處理室2係一真空室，和一真 空泵浦（無顯示）可被連接至該排氣管線7。該真空泵浦 可被連接至另一泵浦及/或至一氣賭滌氣器（無顯示）。 例如真空泵浦，其能被懕用於埴些製程中係機械旋轉與增 壓泵浦、擴散泵浦、冷凝泵浦、吸著泵浦和渦輪分子泵浦 。另外地，該處理糸統可執行製程例如大氣壓力CVD * 在處理室2.内部處係被保持在約大氣壓力有一稍微冥空。 該製程經常需要活性或非活性（惰性）氣體種類，其 可在一等雕子體或非等離子*狀態中。例如活性氣Η *其 可被使用於本發明的系統包括矽烷（S i Η4 )、氯化氫 (HC 1)和氛（C 12 )，被提供該濕氣程度係低於1 000 p pm。然而，該等活性氣體係不限定這些。任何 惰性氣«諸如，例如：氧、氮、氤和氫可被使用於本發明 的系统中。 -1卜 本紙張尺度逍用中困國家揉準（CNS ) A4说格（210X297公釐） II— I— til— 1111.1^ I It II ^ —PI— ^ ^ (請先《讀背面之注f項再填寫本頁) 經濟部中央橾準局貝工消费合作社印装 A7 __B7__ 五、發明説明（7 ) 為了檢测與测量分子氣態雜霣濃度於該處理工具中， 本發明的半等鱧處理系統進一步包括一吸收光譜學澜壘糸 統8用以測量一氣態分子種類。該吸收光譜學測量糸統包 含一光源9與一偵檢器1 0，其可以係一光二極熥，和排 氣管線7内一樣本區K光通訊。 闞注之任何分子雜質可被檢測，僅需要利用一遘當的 光源。例如，水蒸氣、氧化氮、一氧化碳和甲烷或其他烴 可被檢測，藉由測量從一二極體雷射源發出的光之衰減， 其發射一不純的波長度特性之光。 雷射光源其發光在特殊波段，該處闢注之分子吸收最 強烈Μ致增進測置靈敏度。特別地，光源其發射在波長比 約2微米長係較佳的，因為«注的很多分子雜質於此波段 內具有強吸收帶。 任何合適的被長可調光源可被使用。目前可利用之光 涯，二極體雷射光源係較佳的，因為它們的窄媒寛度（小 於約10_3 cm_1)和可靠地高強度（約0.1至數《瓦） 在該發出波長。 例如二棰體雷射包括鉛鹽與砷化鎵型二極«雷射。該 鉛鹽型雷射要求低溫用Μ操作和發射紅外線光（既，波長 比3微米長），同時該砷化鎵型二極»霤射可操作在接近 室溫及發射於接近紅外線波段（0 ♦ 8 — 2微米）中。 近來，二極體雷射除了砷化鎵（或其他JI 一 V裡合對 例如磷化砷）已管說明外（見，『中紅外線波長增強微置 -12- 本纸張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） ----------Λ-------tr------ (請先閱讀背面之注$項再填寫本頁) 經濟部中央揉準局員工消费合作社印装 A7 B7 五、發明説明u〇) 氣體傳感』R*Mart inel 1 i ，「雷射聚焦世界 J ，：1996年3月，第77頁）想包括銻。疽些二極» 發射一波長比2微米适大的光當操作在一 8 7 · 810時。 然而這樣的一低溫係不方便，它與鉛蘧雷射所需要的低溫 比較（少於一 170Ό)係較合宜地。相似的S射操作在 4微米與亦曾被提出（見*『雷射與光霄子學J ，1996 年3月）。上述之二極鼉雷射類型將最好操作在至少一4 〇〇之溫度。使用一溫差電冷卻器用以溫度控制在這樣的 溫度造成這些光源比該等較低溫二極《糸統籣軍。為了讓 這些雷射的使用更令人滿意，改良該光特性超通目前水平 係重要的。例如*單撗式二極熥（即*二極體它們的發射 在固定溫度和驅動霣流係在一單被長與發射在其他波長至 少40dB較小強度）將會利用的。 合適的光源供使用於本發明係不被限定上述二極艚笛 射。例如，其他類型的雷射其係相似的大小與可由篛單霣 子機構調諧，諸如光繼霤射與量子串级笛射，係被期待的 。這些的雷射之使用當它們變成可利用於商品化係被期待 的。 光束1 2係由該已描述之光源9產生，係被發送進入 樣本區1 1穿過至少一光透射窗1 3 ,其可被設置於排氣 管線7之壁內。該测量系統可被規劃以致光束12係由一 光反射面14反射在該樣本區內和臁開樣本區11其穿邊 之留與進入該樣本區所穿通之窗係相同的。另外地，該光 -13- 本紙張尺度埴用中國困家揉f ii cNS7^4规格（210X297公釐） ----------β-------tr------之 (請先閱讀背面之注$項再填寫本頁) 經濟部中央揉準局貝工消费合作社印製 317642 A7 B7 五、發明説明（丨丨） 束穿過該等窗進入與離開該樣本匾可不同和可被設置在該 排氣管線之不同邊。該測董糸統亦可被規劃Μ致該光束直 線通通該樣本區從一光入口窗通《—光出口窗而在該樣本 區内不被反射。 光反射面14可被形成分開從或整塊利用排氣管镍7 之一壁。光反射面1 4最好係一抛光金屬。當此表面一高 反射性時係期望的，該表面可被鍍膜利用一或更多層的一 反射性材料例如黃金，其它金屬層或一高度反射的介電質 鍍膜為了加強其反射性。並且，為了最小化該不利效懕， 藉由製造沈積成型在該光反射面上，一加热器用Κ加熱該 光反射面亦可被提供。 接著參考圖1 Β *當該光譜學測董係被製造在該排氣 管線之一部分，其係不被連接至該室以一直媒，而是於管 媒中一彎曲之後被連接至該腔，其已管確定的，該排氣在 彎曲處之一小部分排除係其特別之優點，其内部該測量區 中流體流霣係相當程度被加強。於該排氣管線中從該樣本 區前階段的一鼙曲，専致渦流，對於響應前階段澹度改變 其係相當地慢。 在此一事例中，一流體穩定排氣量可被排除通過流體 穩定管線1 5。如此做*該渦流可被有效地消除或最小化 。流出物之量從通過流體穩定管線15排除係從該室全部 流出物流量之體積低於約1 0%。 參考圈2Α中，該吸收光譜學测量系統可進一步包括 -1 4 - 本紙張尺度適用中國國家橾準( CNS ) A4规格（210X297公釐） ----------^------1T-------之 (請先Μ讀背面之注$項再填寫本頁) 經濟部中央揉準局貝工消费合作社印«. A7 _____B7_ 五、發明説明（/>) 至少一第一鏡子16用以反射光束12從光源9通通光透 射窗13進入樣本區1 1 ,和至少一第二鏡子17，18 用Μ反射光束1 2離開樣本匾1 1至主偵檢器1 0。鏡子 1 6係最好成曲線形，為了使平行該光束當該光從二極鱷 雷射源係分散。同樣地，鏡子17，18係最好成曲線形 為了聚焦該平行光束於偵檢器1〇上。 本發明的一另外實施例，被說明於圃2 Β中，光透射 窗1 3之角度可被調整Κ致該笛射光之入射角度可被增加 或被減少，和正常窗偏離一角度。此特性係實際優點；因 為該雷射光回至該雷射之反射可被調整與被最小化。這種 反射回來可增加雷射雜訊（例如，由回授進入該腔）或引 起干援條紋（例如，由成形一校準器有該雷射網格）其減 少測量靈敏度。 設置窗1 3在一角度其中表達一進一步優點，一第二 偵檢器1 9可方便被利用用以檢測該入射光束之被反射部 分。應注意到，該圖形沒有畫刻度，和實際上窗1 3可被 製造如被要求一樣小。而且，在入射光束與從鏡子14被 反射光束之間係該角度，實際上，比被標示的小。因此， 對準該窗13之角度的重要性係大於可能出現從鼸2Α與 2 Β的一非常草率檢査。 光透射窗13可另外被提供利用一鍍膜層於一表面上 ，反面面向該樣本區用Κ反射光束1 2之一部分。減損從 發射部分之光束其被反射部分所產生信號，可等致更精準 -15- 本纸張Λ度適用中國國家梂準（CNS ) Α4规格（210X297公釐） ----------^------訂------線叫 (請先Η讀背面之注f項再填寫本頁) 317&42 ΑΊ Β7 五、發明説明（θ) 吸收涵置。在該商品化可利用鍍膜材料中，金屬的鍍膜係 較佳的。合通的鍍膜窗係商品化可獲得從各種供應商，諸 如：Oriel ，Mel les，Griot 和 Newp o r t ° 一第二偵檢器1 9，其亦可係一光二極髓，用以測量 該光束之一部分20，其係從光透射窗1 3反射，和機構 一樣用K減少從主偵檢器1 0 —測置得到之反射信號*可 選擇地被提供於該糸統中。一蓮算放大器於一規豳中諸如 已說明於該文獻（見，例如，Moore，J · H· et a 1 ·，『建造科學的装置』，Addison We s ley，倫敦，（1983年））可動作如該機構用Μ 減少該反射信號。 經濟部中央標準局貞工消費合作社印装 (請先閱讀背面之注$項再填寫本頁) 該被反射光於該樣本區中翮注之分子不顯示任何吸收， 和因此提供一反射信號。藉由減少該反射信號，因此光通 過該晶胞（其係經由該主偵檢器測1)，光源中之變化能 被補償。此亦顧及到被增強S敢度對於由該處理室2中該 分子種類所引起信號改變。而「雙光束J技術使用減少一 反射光束係大家皆知的，它們通常要求一専用光束分開器 ，即，一光元件它的唯一功能係分開該光束。依據本發明 *該入口窗至該室可提供此功能不需要給任何添加組成物 。傳送對被反射光之比率在此窗口可被控制*薄由使用一 適當的鍍膜用於該窗。 該光源最好係一二極«雷射被維持在一準確的被控制 -16- 本纸張逍用中國國家揉準（CNS ) Α4规格（210X297公釐） 經濟部中央標準局員工消費合作社印製 A7 _B7_ 五、發明説明（ι+) 溫度。該二極體笛射之溫度係通常被控制在至少正或負0 • It：之一精確度。合遒的二極«笛射與溫度控制器係眾 人皆知於該技術中且係可從數個製造商獲得。鉛鼸雪射係 可獲得從雷射光子學股份有限公司之雷射分析部門•和砷 化鎵雷射係可獲得從慼拥器無限公司。一缠合的溫度控制 器偽該Lake Shore DRC — 910A溫度控 制器（用於低溫）或任何數種横式從I LX Light wa r e公司。用於近室溫揉作。 光源電子控制該霣流被施加至該二極髖雷射K致該二 極《雷射發射一特定波長之光，其係由該分子雜霣吸收期 望被測置。如電流被施加至該二極邇笛射增加，波長增加 或減少視該二極18類型而定。雷射電流控制器係已知於該 技術中且商品化可獲得。一合適的控制器係該ILX L ightware LDX — 3620 0 一偵檢器，例如一光二極體，響應於由該二極體雷射 所發射出相同波長的光。合適的偵檢器係巳知於該技術中 且商品化可獲得*諸如該Graseby HgCdTe Mo d e 1 7 1 0 11 2用於紅外線檢測，或該E G& G I n G a A s C30641用於近紅外線檢測*利 用一10百萬赫玆（MHZ)頻寬放大器。偵檢器10W 應於光束1 2其係從一表面被反射，該表面在該排氣管線 內而且光束離開該樣本區通過一或更多光透射窗13中的 一個。偵檢器霣子接收該輸出從該偵檢器和產生一輸出其 -17- 本纸張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） ----------Λ-------訂-------線 f (請先閱讀背面之注$項再填寫本頁) A7 _B7_ 五、發明説明Ο <) 係闞於光在該想要的波長之吸收。該吸收，即，該被檢澜 光強度於闞注的分子雜質出規對該強度其可被見到於它們 缺少中之比率，由一«臞使用巳知校準資料可被轉換或該 分子雜質之濃度。 各種方法用以控制該由二極體雪射所發射的光之波長 可被使用。例如，該笛射波長能被鎖至該想要值由一回授 糸统或能重複地掃描涵蓋一波段•其包括該想要的波長為 了產生一光譜。之後光譜能被平均κ增進靈敏度。這二者 技術係已知。（見*例如*Feher e t a 1 · · 『大氣微量氣體組成之可調二播體笛射監测J ，Spec t o c h i m i c a Acta，. A51，第 1579 -1599 頁（1995 年）與 Websteret a 1· *『紅外镍雷射吸收：理論與應用•雷射遠程化學分 經濟部中央揉準局負工消费合作社印製 (請先《讀背面之注$項再填寫本頁) 析』，R-M*Measuews (Ed·) ，Wi 1 e y，紐約（1988年））。一另外方法用K穩定波長係 被掲示於聯合待定申請J ，序號08/7 1 1 ，780， 與此一起提出相同資料。Attorney Do eke t ，編號0 1 6499 - 205，其係特此合併參考。Printed by the Ministry of Economic Affairs of Central Central Bureau of Employee Consumer Cooperatives «L A7 _B7____ V. Description of the invention (2) The present invention will now be described and referred to FIGS. 1 A and 2A, which illustrate side cross-sections and cross-sectional views, respectively, an invention room Effluent monitoring system. The system 1 includes a half of the processing chamber 2 in which a semiconductor substrate 3 is arranged on a substrate holder 4. A gas inlet 5 is provided to deliver a process gas or multiple gases to the process chamber 2 using M. The effluent is discharged from the processing chamber 2 through an exhaust opening 6 in the processing chamber 2 and then passes through an exhaust pipe medium 7. According to an aspect of the present invention, the treatment system is entangled in performing an evacuation process, such as etching, wolf failure, ion implantation, or chemical gas deposition (CV D) process. In this case, the processing chamber 2 is a vacuum chamber, and a vacuum pump (not shown) may be connected to the exhaust line 7. The vacuum pump can be connected to another pump and / or to a scrubber (not shown). Vacuum pumps, for example, can be used in some processes to mechanically rotate and boost pumps, diffusion pumps, condensate pumps, sorption pumps, and turbomolecular pumps. In addition, the processing system can perform processes such as atmospheric pressure CVD * at the interior of the processing chamber 2. It is maintained at about atmospheric pressure with a slight void. This process often requires reactive or inactive (inert) gas species, which can be in a first-class sculpture or non-plasma * state. For example, the active gas H * which can be used in the system of the present invention includes silane (Si H4), hydrogen chloride (HC 1), and atmosphere (C 12), which are provided with a moisture level below 1 000 p pm. However, these reactive gas systems are not limited to these. Any inert gas such as, for example, oxygen, nitrogen, 氤, and hydrogen can be used in the system of the present invention. -1 The size of the paper sheet is used in the troubled countries (CNS) A4 said grid (210X297 mm) II— I— til— 1111.1 ^ I It II ^ —PI— ^ ^ (please read the note f on the back Item and then fill out this page) A7 __B7__ printed by the Beigong Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economy V. Description of the invention (7) In order to detect and measure the concentration of gaseous heterodyne in the molecule in the processing tool, the semi-isolar treatment of the present invention The system further includes an absorption spectroscopy Lanlei system 8 for measuring a gaseous molecular species. The absorption spectroscopy measurement system includes a light source 9 and a detector 10, which can be a photodiode, and K-optical communication in the same area as in the exhaust line 7. Any molecular impurities that can be detected can be detected by using only an appropriate light source. For example, water vapor, nitrogen oxide, carbon monoxide and methane or other hydrocarbons can be detected by measuring the attenuation of light emitted from a diode laser source, which emits an impure wavelength characteristic light. The laser light source emits light in a special wavelength band, where the absorbed molecular absorption is the strongest, which improves the measurement sensitivity. In particular, the light source has better emission at a wavelength longer than about 2 microns because many molecular impurities have strong absorption bands in this band. Any suitable tunable light source can be used. Currently available light sources, diode laser light sources are preferred because of their narrow medium width (less than about 10_3 cm_1) and reliable high intensity (about 0.1 to several watts) at this emission wavelength. For example, the dichroic laser includes lead salt and gallium arsenide type diode «laser. The lead-salt laser requires low-temperature operation with M and emission of infrared light (that is, the wavelength is longer than 3 microns), and the gallium arsenide type diode can be operated at near room temperature and emitted in the near infrared band (0 ♦ 8-2 microns). Recently, the diode laser has been explained in addition to gallium arsenide (or other JI-V compound pairs such as arsenic phosphide) (see, "Mid-Infrared Wavelength Enhancement Micro-Decision-12- This paper scale is applicable to Standard (CNS) A4 specification (210X297mm) ---------- Λ ------- tr ------ (please read the $ item on the back and then fill in this page) A7 B7 printed by the Employees ’Consumer Cooperative of the Ministry of Economic Affairs of the Ministry of Economic Affairs V. Description of invention u〇) Gas sensor R * Mart inel 1 i," Laser Focus World J ,: March 1996, page 77) Want to include Antimony. These dipoles »emit a light with a wavelength greater than 2 microns when operating at 8 7 · 810. However, such a low temperature system is inconvenient and it is compared with the low temperature required by lead laser (less than A 170Ό) is more convenient. A similar S-laser operation at 4 microns has also been proposed (see * "Laser and Guangxiaozixue J", March 1996). The above-mentioned two-pole laser type will be the most It is easy to operate at a temperature of at least 4000. The use of a thermoelectric cooler for temperature control at such a temperature causes these light sources to be cooler than the dipoles. The use of these lasers is more satisfactory, and it is important to improve the optical characteristics beyond the current level. For example, * single diodes (that is, * diodes whose emission is at a fixed temperature and drives the dichroic system in a single It is longer and emits at least 40dB less intensity at other wavelengths) will be used. Suitable light sources for use in the present invention are not limited to the above-mentioned dipole blaze. For example, other types of lasers are similar in size and It can be tuned by a simple single-body mechanism, such as light-following shots and quantum cascade shots, which are expected. The use of these lasers is expected when they become available for commercial systems. Beam 1 2 is derived from this The described light source 9 is generated and is sent into the sample area 11 through at least one light transmission window 13 which can be placed in the wall of the exhaust line 7. The measurement system can be planned so that the beam 12 is made of a The light reflecting surface 14 reflects in the sample area and the open sample area 11 and the edge of the opening is the same as the window through which the sample area is penetrated. In addition, the light -13 Kneading f ii cNS7 ^ 4 specification (210X297mm)- --------- β ------- tr ------ (Please read the note $ item on the back and then fill in this page) Printed by Beigong Consumer Cooperatives, Central Bureau of Economic Development, Ministry of Economic Affairs Manufacturing 317642 A7 B7 V. Description of the invention (丨 丨) The beam entering and leaving the sample plaque through the windows may be different and may be placed on different sides of the exhaust line. The measurement system can also be planned. The light beam passes straight through the sample area from a light entrance window to a light exit window without being reflected in the sample area. The light reflecting surface 14 may be formed to separate or integrally use a wall of the exhaust pipe nickel 7. The light reflecting surface 14 is preferably a polished metal. When this surface is highly reflective, it is desirable that the surface can be coated with one or more layers of a reflective material such as gold, other metal layers or a highly reflective dielectric coating to enhance its reflectivity. And, in order to minimize the adverse effect, by manufacturing a deposit formed on the light reflecting surface, a heater heating the light reflecting surface with K can also be provided. Next, referring to FIG. 1 Β * When the spectroscopic measurement system is manufactured in a part of the exhaust line, it is not connected to the chamber to be a medium, but is connected to the cavity after a bend in the pipe medium, It has been determined that the elimination of a small part of the exhaust gas at the bend is a special advantage, and the fluid flow in the measurement area is strengthened to a considerable extent. A slight curve in the exhaust line from the previous stage of the sample zone, causing vortex flow, is quite slow to respond to changes in the previous stage's temperature. In this case, a fluid stabilizing exhaust volume can be excluded through the fluid stabilizing line 15. In doing so * the eddy current can be effectively eliminated or minimized. The amount of effluent excluded from the fluid stabilization line 15 is that the volume of total effluent flow from the chamber is less than about 10%. In the reference circle 2Α, the absorption spectroscopy measurement system may further include -1 4-This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) ---------- ^ --- --- 1T ------- (Please read the note $ item on the back first and then fill in this page) Printed by Beigong Consumer Cooperative of Central Bureau of Economic Development of Ministry of Economic Affairs «. A7 _____B7_ V. Description of the invention (/ > ) At least one first mirror 16 is used to reflect the light beam 12 from the light source 9 through the light transmission window 13 into the sample area 1 1, and at least one second mirror 17, 18 uses the M reflected light beam 12 to leave the sample plaque 1 1 to the main inspection器 1 0。 10. The mirror 16 series is preferably curvilinear, in order to make the beam parallel to the beam when the light is dispersed from the dipole laser source system. Similarly, the mirrors 17, 18 are preferably curved to focus the parallel beam on the detector 10. A further embodiment of the present invention is illustrated in FIG. 2B. The angle of the light transmission window 13 can be adjusted K so that the incident angle of the flute light can be increased or decreased, and the normal window deviates by an angle. This feature is a practical advantage; because the reflection of the laser light back to the laser can be adjusted and minimized. Such reflection back can increase the laser noise (for example, by feeding back into the cavity) or cause interference stripes (for example, by forming a calibrator with the laser grid) which reduces the measurement sensitivity. Setting the window 13 at an angle expresses a further advantage, and a second detector 19 can be conveniently used to detect the reflected portion of the incident beam. It should be noted that the figure is not scaled, and in fact the window 13 can be made as small as required. Moreover, the angle between the incident light beam and the reflected light beam from the mirror 14 is actually smaller than the marked one. Therefore, the importance of aligning the angle of the window 13 is greater than the possibility of a very sloppy inspection of the 2nd and 2B. The light transmission window 13 may additionally be provided with a coating layer on a surface, the reverse side of which faces the sample area to reflect a portion of the beam 12 with K. The signal generated by the reflected part of the light beam from the emitting part is reduced, which can be more accurate -15- This paper is suitable for China National Standards (CNS) Α4 specification (210X297 mm) -------- -^ ------ Subscribe ------ Line call (please read the note f item on the back and then fill in this page) 317 & 42 ΑΊ Β7 V. Description of Invention (θ) Absorption Containment. Among the commercially available coating materials, metal coatings are preferred. The commercialized coated windows are commercially available from various suppliers, such as: Oriel, Mel les, Griot and Newport. A second detector 19, which can also be a photodiode, used to measure the beam A part 20, which is reflected from the light transmission window 13 and, like the mechanism, uses K to reduce the reflected signal * measured from the main detector 10-which is optionally provided in the system. A lotus arithmetic amplifier is described in this document in one standard (see, for example, Moore, J.H. et a 1 ·, "Building a Scientific Device", Addison Wesley, London, (1983)) Actionable as the mechanism uses M to reduce the reflected signal. Printed by the Zhengong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the item on the back of the page before filling in this page). The molecules that are reflected in the sample area do not show any absorption, and therefore provide a reflected signal. By reducing the reflected signal, so that light passes through the unit cell (which is measured by the main detector 1), changes in the light source can be compensated. This also takes into account that the enhanced S daring to the signal changes caused by the molecular species in the processing chamber 2. "It is well known that the dual beam J technology uses a reduced reflected beam. They usually require a special beam splitter, that is, a light element whose sole function is to separate the beam. According to the present invention * the entrance window to the chamber This function can be provided without adding any additional components. The ratio of transmitted to reflected light can be controlled in this window * thin by using an appropriate coating for the window. The light source is preferably a diode «laser quilt Maintained at an accurate controlled -16- This paper is printed in China National Standard (CNS) Α4 specification (210X297 mm). The A7 _B7_ is printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy. 5. Description of the invention (ι +) temperature The temperature of the diode shot is usually controlled to at least plus or minus 0 • It: one of the accuracy. The dipole «shot and temperature controllers are well known in the technology and are available Obtained from several manufacturers. The lead ray snow system can be obtained from the laser analysis department of Laser Photonics Co., Ltd. and the gallium arsenide laser system can be obtained from Qi Yongqi Unlimited Company. An entangled temperature control The device pseudo the Lake Shore DRC — 910A temperature controller (for low temperature) or any of several horizontal styles from I LX Light wa re. It is used for kneading at near room temperature. The electronic control of the light source is applied to the dipole hip laser K to cause the Diode "The laser emits light of a specific wavelength, which is absorbed by the molecular heterodyne and is expected to be measured. If a current is applied to the dipole, the laser beam increases, and the wavelength increases or decreases depending on the type of the diode 18 The laser current controller is known in the technology and is commercially available. A suitable controller is the ILX Lightware LDX — 3620 0 A detector, such as a photodiode, is responsive to the diode Body lasers emit light of the same wavelength. Suitable detectors are known in the technology and are commercially available * such as the Graseby HgCdTe Mo de 1 7 1 0 11 2 for infrared detection, or the E G & amp GI n G a A s C30641 is used for near-infrared detection * Using a 10 million Hertz (MHZ) bandwidth amplifier. Detector 10W should be reflected by a beam 12 which is reflected from a surface where the surface is exhausted Inside the pipeline and the beam leaves the sample area through one or more light transmission windows 13 One. Detector Yuanzi receives the output from the detector and produces an output of -17- This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -------- --Λ ------- Subscribe ------- Line f (please read the $ item on the back and then fill in this page) A7 _B7_ V. Description of Invention Ο <) Kan Yuguang is here The absorption of the desired wavelength. The absorption, that is, the intensity of the detected blue light in the molecular impurities out of the standard is the ratio of the intensity that can be seen in their lack. The calibration data is used by a The concentration of the molecular impurities can be converted. Various methods can be used to control the wavelength of the light emitted by the diode snow. For example, the lasing wavelength can be locked to the desired value by a feedback system or can be repeatedly scanned to cover a band • It includes the desired wavelength in order to generate a spectrum. The spectrum can then be averaged to increase sensitivity. These two technologies are known. (See * e.g. * Feher eta 1 · "Adjustable two-body gas monitoring of atmospheric trace gas composition J, Spec tochimica Acta, .A51, pages 1579 -1599 (1995) and Websteret a 1 · *" Infrared Nickel Laser Absorption: Theory and Application • Printed by the Negative Labor Consumer Cooperative of the Central Rectification Bureau of the Ministry of Economics of the Laser Remote Chemistry Division ·), Wi 1 ey, New York (1988)). An alternative method using the K-stabilized wavelength system is shown in the joint pending application J, serial number 08/7 1 1, 780, along with which the same information is presented. Attorney Do eke t, number 0 1 6499-205, which is hereby incorporated by reference.
進一步改.良於靈敏度可被達到，藉由調變該二極«電 流與波長和解調變該偵檢器信號在該調變頻率或它的較高 諧波中的一個。此技術係巳知如諧波檢測光譜學。（見， Feher e t a 1 ·，『大氣微量氣艚組成之可調 二極歷S射監测.J ，Spectrochimica A -18 - 本纸張尺度適用中國國家揉準（CNS ) A4规格（21 OX297公釐） ^17642 A7 B7 五、發明説明（丨k ) (婧先《讀背面之注意事項再填寫本頁) eta， A51，第 1579 -1599 頁（1995 年）與Websteret a 1 ·『紅外線雷射吸收： 理論與懕用於笛射逭程化學分析中』，R*M*Meas uews (Ed·) *Wi ley，紐約（1988 年） )0 如被揭示於聪合待定申請中，序號08/7 1 1 ，6 46，與此一起提出相同賁料。At torney Do cket，編號016499 - 203·其係特此合併參 考，於一特別有效的諧波檢測吸收系統中，該光源諝變振 幅可被設至一值*其接近在該吸收特性被檢测之中心的一 諧波信號之最大值。此糸統中，該光源與偵檢器係被包含 在一室内，其與該樣本區隔離，和該室壓力係被控制至一 壓力大於大氣壓力。藉由增壓該室|該被檢測信號可被最 大化*因此提供精準測置於一樣本中在十億分之幾（PP b ) —樣低的範圃。 經濟部中央橾準局貝工消費合作杜印裝 本發明另一實施例中，多數鏡子（或一鏡子有多面） 可被設置在該排氣管媒7中，此容許該光束穿過該樣本區 多次。藉以增加該有效路徑長度於此方法中*該測量糸統 之靈敏度係因此被增加。 多通光之各種形式係被掲示於《合未定申諝序號0 8 /711 ，504,與此一起提出相同黄料。Attor ney Docket編號016499-204，其係 特此合併參考。如被揭示於此聯合未定申請中，多通晶胞 -19- 本纸張尺度逍用中國國家搮準（CNS ) A4規格（210X297公釐） 經濟部中央橾準局貝工消费合作社印製 A7 _B7_ 五、發明説明（\y) 係能增進測量系統之靈敏度，鶊由延長該有效路徑長度該 光束行程。在這些晶胞中，該平面多通晶胞可被製造任意 地小，於平行與垂直於該光傅遞平面之方向中。因為它的 大小，該平面多通晶格特別地好，缠合用於使用在目前的 半専體處理工具中。 該特定晶胞特性在那個申請中係一多邊形平面多通晶 胞。該晶胞包含一樣本區由多數壁围繞有光反射面。由於 有規律形狀，該光束可由每一壁反射，在離開該晶胞前。 因為該光束可維持在相同平面，該晶胞的大小可被保持至 一最小。 下面例子說明本發明糸統與方法係特別地方便於氣應 分子種類之檢测中。 例1 : 如下所述，濕氣濃度於一半等體處理糸统中當触刻係 被監测時，使用該操作程序如下所述。 如該半導體裝置糸統*一被施加材料精準5000 (Further improvement. Good sensitivity can be achieved by modulating the current and wavelength of the diode and demodulating the detector signal at one of the modulation frequency or its higher harmonics. This technology is known as harmonic detection spectroscopy. (See, Feher eta 1 ·, "Adjustable dipole calendar S-shot monitoring of atmospheric trace gas sacs. J, Spectrochimica A -18-This paper scale applies to China National Standard (CNS) A4 (21 OX297 %) ^ 17642 A7 B7 V. Description of the invention (丨 k) (Jing first "Read the notes on the back and then fill out this page) eta, A51, pages 1579 -1599 (1995) and Websteret a 1" Infrared Laser Absorption: Theories and experiments are used in the chemical analysis of flute emission process, R * M * Meas uews (Ed ·) * Wi ley, New York (1988)) 0 As disclosed in the pending application of Satoshi, serial number 08 / 7 1 1, 6 46, together with the same materials. At torney Do cket, No. 016499-203. This is hereby incorporated by reference. In a particularly effective harmonic detection and absorption system, the amplitude of the light source can be set to a value * which is close to the detection of the absorption characteristic The maximum value of the harmonic signal in the center. In this system, the light source and the detector system are contained in a chamber, which is isolated from the sample area, and the chamber pressure is controlled to a pressure greater than atmospheric pressure. By pressurizing the chamber | the detected signal can be maximized * and thus provides accurate measurements in a few parts per billion (PP b) —a low range. In another embodiment of the present invention, most mirrors (or a mirror with multiple sides) can be placed in the exhaust pipe medium 7, which allows the light beam to pass through the sample Multiple times. By increasing the effective path length in this method * the sensitivity of the measurement system is therefore increased. The various forms of multi-pass light are shown in "Undecided Application No. 0 8/711, 504, together with the same yellow material. Attor ney Docket No. 016499-204, which is hereby incorporated by reference. As revealed in this joint pending application, Duotong Cell -19- This paper size is printed in Chinese National Standard (CNS) A4 (210X297 mm). The A7 is printed by the Ministry of Economic Affairs, Central Bureau of Standardization, Beigong Consumer Cooperative. _B7_ Fifth, the invention description (\ y) can improve the sensitivity of the measurement system, and the beam path can be extended by extending the effective path length. In these unit cells, the planar multi-pass unit cell can be made arbitrarily small, in a direction parallel and perpendicular to the optical transfer plane. Because of its size, the planar multi-pass lattice is particularly good, and entanglement is used in current half-grain processing tools. The specific unit cell characteristic in that application is a polygonal planar multi-pass unit cell. The unit cell contains a light reflecting surface surrounded by a majority of walls. Due to the regular shape, the beam can be reflected by each wall before leaving the unit cell. Because the beam can be maintained in the same plane, the size of the unit cell can be kept to a minimum. The following example illustrates that the system and method of the present invention are particularly convenient for detecting the type of aerobic molecules. Example 1: As described below, when the moisture concentration is monitored in the half-body treatment system when the engraving system is monitored, use this operating procedure as described below. If the semiconductor device * is applied with a precision of 5000 (
Applied Materials Precisi on 5000)等離子鼉触刻糸統係被使用與一TDL A S测ft糸統埋接。該測1糸統係安裝用於水蒸氣测《Κ 決定該處理室之乾嫌降低特性。 該測量系铳樣本區係被設置於蝕刻工具之排氣管線內 ，該等光透射入口與出口窗係被設置直接披此交叉於該排 氣管線之壁内*和該樣本區被放置它們之間，K致該光由 -20- 本紙張尺度逍用中國國家揉準（CNS ) A4规格（210X297公釐） ----------5------1T------線「 (請先^讀背面之注$項再4寫本頁) S17642 A7 B7 五、發明説明（丨多） 笛射二極體發射穿越直線通通該入口窗至該出口窗。 該二極髓係由感測器無限公司製造，且係I nGaA s P / I η P之組合。該二極體係被製造為了發光於該波 長波段中包括1·3686撤米，該處一強吸收由水蒸氣 發生。該二極S8應係分佈回授類型（DFB)，確保軍横 式發射*即，為了確保該二極體發射在一單頻率，如被描 述於M*Feher e t al ，Spectroch imica Acta A51，第 1579-1599 頁（1995)。該二極髓係被安裝在一熱«耦冷卻器上 ，其係被控制至 ，由一Hytek 5 6 1 0超小型比例溫度控制器。該笛射霣流係被控制由 一 ILX Lightwave I L X 362.0° 該二極體係被放在一 0 * 5时直徑偏離中心線拋物線 鏡子之聚焦位置，其對準該二極髓霤射光束。該鏡子有一 抛光鋁表面。該偵檢器係一EG&G C30642，其 係一2奄米有效直徑InGaAs光二極體。該偵檢器輸 出係被放大由一類比横組（Analog Module s )公司的前置放大器。該系統係非常小巧的。和（除了 該«流控制器）可被供應於一每邊約6吋之立方《中。 由雷射二極體發射之光的波長係被鎖定該特擻值（即 :1 · 3686微米）使用一回授信號至該雷射二棰體。 為了準確地同步該波長，一信號對應於該吸收信號之第三 導數係被使用。濕氣测量係被開始於該基質進入該處理室 -2 1- 本纸張尺度適用中國國家揉準（CNS ) A4规格（21〇Χ297公釐） ----------^------IT------4 {請先聞讀背面之注$項再填寫本頁) 經濟部中央標準局負工消費合作社印製 經濟部中央橾準局貝工消費合作社印策 A7 _B7 _ 五、發明説明（(/) 之入口上和係被中斷於完成該處理，和測量係被平均涵薏 一第二區間。該資料係即刻被計算，利用該结果被回授至 該蝕刻工具處理控制器。 載入該半専髓基霣進入該處理室後，該系統係被排氣 直到該水蒸氣分壓係20«托〇此時，30 s c cm三氧 化砸（BCI3) ，40 seem 氯，250 see m氦和9 ·4 seem三氢甲烷（CHC13 )係被引 進該處理室。一分鐘後，該氣篇流係中斷且該濕氣程度渐 漸的回復至接近它的先前程度接著與殘餘的BC 13反應 0 圖3係一水蒸氣壓力與廑理時間的《係曲線臞。該灘 氣分應降低於可测出程度，因為BC1 3與水蒸氣快速反 應如下： BC13 2BCl3+3H20 = B2〇3 (固H) 6HC1 因此，加BC13太早於該處理中，當濕氣分壓係太 高，係缺點因為一過多量粒子將被形成◊粒子係眾人皆知 具有害效應於該半専《元件上。在其他方面，水蒸氣在數 個蝕刻製程期間出現，例如鋁蝕刻，係無法忍受，BC 1 3係因此必須為了消除水蒸氣之最後殘留，本發明的糸統 可被使用於決定當該濕氣分懕係足夠低K允許BC 13螬 加和同時證明BC 1 3的增加係足Μ完全移走殘餘水蒸氣 〇 例2 : i - 2 2 - 本纸張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） (請先閱讀背面之注$項再楱寫本頁) 訂 ___-_B7__ 五、發明説明（，）. 使用相同蝕刻工具如上所述並參考例1 ，一氧化碳（ C0)係被監測於一等離子體ASH處理中，其中光姐材 料從一被蝕刻基質係剖離的。於該测量糸統中，一铅籩二 極體由雷射光子學（Laser Photon i cs) 股份有限公司製造，係被安裝於一霤射分析（Laser Ana 1 yt i c s)液態氮冷卻冷頭中。一 1吋直徑 、非球面、減反射鍍膜、F/1硒化鋅（ZnSe)透鏡 係被使用以準直該光束。該偵檢器係一Graseby HgCdTe模式1710112，有一10百萬赫玆（ MHZ)頻寬放大器。雷射電流係由一 I LX L i g h wave I LX — 3620控制，和該溫度係由一La k e Shore 乃11(：一910八控制器控制.。由該 雷射二極髖發射之光的波長係鎖定該特激值用於一氧化碳 ，即，4 · 7微米，使用一回授信號至該雷射二極«。一 信號對應於該吸收信號之第三導數係被使用。 經濟部中央揉準局貝工消费合作社印— (請先Μ讀背面之注$項再填寫本頁) 載入該半導體基霣進入該蝕刻室之後，氧氣在一 6 0 seem流量率係被引入該室。該壓力係被維持在1·5 托在處理期間，和該一«化碳拥量係被執行遍及全部處理 。測量係被平均涵蓋一第二區間。 從該一氧化碳測量之结果係陳述於圃4中，顯示一氧 化碳氣態壓力與處理時間之闞係曲線黼。該讕指出該處理 之终點發生於約6分鐘K後，在此點該一氧化碳於該處理 室内降下。 -23- 本紙張尺度適用中國國家搮準（CNS ) A4规格（210X297公釐) 317642 A7 Β7 五、發明説明（>/) 上例顯示本發明糸統與方法係相當缠合用K監测氣態 分子種類於一排氣管線中。 除了上面懕用，本發明係特別地可應用於使用在一負 載鎖定室中。每當一晶片板係被傅人一半導艚處理室·一 般首先被放置於一負載鎖定室内，其係被淨化及/或真空 循環為了移走大氣空氣與其他污染物。該晶Η板係然後從 該負載所定室轉至它本身處理室。淨化及/或真空循環程 度被要求能由真空循環中所獲得之壓力決定。然而，此不 是一特定類別測置且無指出是否該殘餘懕力係主要由水蒸 氣所產生（通常基質暴露於空氣的一结果），或對其他種 類排氣從該基質（通常從先前處理步驟）。因此，其係特 別地便利於監測在負載鎖定室中之水蒸氣。疸樣的.一方法 係特別地有用翮於負載鎖定僅依靠淨化，因此真空測量係 不適宜的。 Μ濟部中央標準局貝工消费合作杜印«. (請先閱讀背面之注意事項再球寫本頁) 由設置一二極體雷射条統於一負載鎖定室之該排氣管 線上，其係可以測量水蒸氣於該負載鎖定流出物中在淨化 循環後。假如該被要求湄氣程度於該處理中係已知，該淨 化時間可被最佳化以剛好滿足提供該必要的濟潔。因為轉 換步驟在製程之間係已知去計算對於半導體工業中可利用 處理室時間之一有效部分，有效的成本優點由此程序可被 霣現。 於一相似方式中，一濕氣感测器被放在任何室之排氣 上，可被使用於一初始的淨化或輿空循環之長度最佳化， -24- 本紙張尺度適用中國國家標準（CNS ) Λ4规格（210X297公釐） 經濟部中央橾準局貝工消費合作社印製 A7 B7 五、發明説明ο 其係通常被使用於從該乾淨房間、一先前的處理步睡、一 負載鎖定室或一轉移室載入晶片板後消除大氣成分。 然而本發明已曾被描述參考一半導通處理工具，一般 的技藝之人們將迅速地重視本發明糸统，亦可遘合於種種 不同的應用。例如，期望該室流出物監测糸統亦可被使甩 當作一安全元件於處理危險氣體或蒸氣中。 眾人皆知的是於該積體電路（ic)製造處理中，一 大量的危險與毒性氣體係被需要的。通常地，這些的氣髏 係被保持於箱内，其係連鑛地被抽空。此箱排氣，即，流 出物，係被抽通過一排氣管線通常至一滌氣器糸統。本發 明的室流出物監測糸統特別地好，適合用於和疽些氣《箱 使用。藉由設置一吸收光譜學拥1糸統於該箱排氣.中，一 洩漏檢測糸統提供瞬間回授係被提供。特別地，一系統用 於高頻（HF)之檢测，其有一吸收在一 1 330«微米 波長，與相當方便的I nGaAs Ρ二氧化物發射一致的 ，係被期望的。 此實施例係最好與一視覺及/或轚音警報系统共同使 用。該警報糸統可被動作於某一事件發生時，諸如：該被 檢測吸收或氣體濃度超過一被預定限制。此外*該偵檢器 可被連接至一閥控制糸統，其將自動地《(上該氣鱷匾柱型 箱或其他閥去停止氣II流動。填些技藝將迅速地能夠設計 與结合適當的警報系統和控制於本發明糸统中由使用眾人 皆知的元件，霣路及/或處理器與機構用於它們的控制。 -25- 本紙張尺度適用中國國家揉準（CNS ) A4规格（210X297公釐） ----------1-------tr------考， (請先閲讀背面之注項再4寫本頁) A7 __ B7___ 五、發明説明（>3 ) 此内容之進一步討論係被省略，因為其係被認為在人們普 通的技蕕範圃内。 在本發明之另外實施例中，該箱流出物監測糸統可被 施加至淨化室環境之監測。因為空氣從該淨化室排出係通 常再回到該淨化室，危險氣體洩漏或危險蒸氣出現於該淨 化室中係特別地有問題的。因此，使用一吸收光嫌學測量 糸統於該淨化室排氣中可提供一特別地有利洩漏檢測糸統 。如上所述參考該氣體箱，此系統可與一警報系統共同使 用0 .然而本發明已曾詳细描述並參考其特定實施例，其將. 可見到一技藝各棰改變與修正可被造成•和相同被應用， 不離開該附加申請專利之範園。 (锖先W讀背面之注意事項再填寫本頁) 訂 4 經濟部中央揉準局貝工消费合作社印聚 -26- 本紙張尺度逋用中國國家揉準（CNS ) Λ4规格（210X297公釐）Applied Materials Precisi on 5000) Plasma rayon touch engraving system is embedded with a TDL A S measurement system. The measurement system is installed for water vapor measurement "K" to determine the reduction characteristics of the treatment chamber. The measurement sample area is set in the exhaust line of the etching tool, the light transmission inlet and the exit window are set directly across the wall of the exhaust line * and the sample area is placed between them In the meantime, K caused this light to be -20- This paper scale is used in China National Standard (CNS) A4 specification (210X297mm) ---------- 5 ------ 1T --- --- Line "(please first read the note item on the back and then write 4 on this page) S17642 A7 B7 Fifth, the description of the invention (multiple) The whistle-emitting diode launches through the straight line through the entrance window to the exit window. The Diode pulp is manufactured by Sensor Infinite Corporation and is a combination of InGaAs s P / I η P. The dipole system is manufactured to emit light in the wavelength band including 1.3686 meters, where a strong absorption Occurred by water vapor. The diode S8 should be distributed feedback type (DFB) to ensure military-type emission * That is, to ensure that the diode emits at a single frequency, as described in M * Feher et al, Spectroch imica Acta A51, pp. 1579-1599 (1995). The diode marrow system is installed on a thermally coupled cooler, which is controlled by a Hytek 5 6 1 0 A small proportional temperature controller. The whistle jet system is controlled by an ILX Lightwave ILX 362.0 °. The dipole system is placed at a focus position of a parabolic mirror whose diameter is off the center line when the diameter is 0 * 5, which is aligned with the dipole. A beam of polished light. The mirror has a polished aluminum surface. The detector is an EG & G C30642, which is a 2 mm effective diameter InGaAs photodiode. The detector output is amplified by an analog horizontal group (Analog Module s) company's preamplifier. The system is very compact. And (except for the «flow controller) can be supplied in a cube about 6 inches on each side. The light emitted by the laser diode The wavelength is locked to the special value (ie: 1. 3686 microns). A feedback signal is used to the laser diode. To accurately synchronize the wavelength, a third derivative of the signal corresponding to the absorbed signal is used The moisture measurement system is started when the substrate enters the processing chamber-2 1- The paper size is applicable to China National Standardization (CNS) A4 specifications (21〇Χ297mm) ---------- ^ ------ IT ------ 4 (please read the $ item on the back and then fill in this page) The Ministry of Central Standards Bureau negative labor consumer cooperatives printed the Ministry of Economic Affairs Central Central Bureau of Precision Industry Beigong Consumer Cooperatives printed policy A7 _B7 _ V. The description of the invention ((/) and the system was interrupted to complete the process, and the measurement system was average Contains a second interval. The data is calculated immediately and the result is fed back to the etching tool processing controller. After loading the semi-medullary base into the processing chamber, the system is exhausted until the The water vapor partial pressure system is 20 ° C. At this time, 30 sc cm trioxide (BCI3), 40 seem chlorine, 250 see m helium and 9.4 seem trihydromethane (CHC13) are introduced into the processing chamber. After one minute, the gas flow system was interrupted and the moisture level gradually returned to its previous level and then reacted with the residual BC 13 0 Figure 3 is a "curve curve" of water vapor pressure and processing time. The beach gas content should be reduced to a measurable level, because the rapid reaction of BC1 3 with water vapor is as follows: BC13 2BCl3 + 3H20 = B2〇3 (solid H) 6HC1 Therefore, adding BC13 is too early in this treatment when the moisture content The pressure is too high, which is a disadvantage because a large amount of particles will be formed ◊ The particle system is well known to have harmful effects on the half-component. In other aspects, water vapor appears during several etching processes, such as aluminum etching, which is unbearable. Therefore, the BC 1 3 series must be used to eliminate the last residue of water vapor. The system of the present invention can be used to determine when the moisture The fraction is low enough that K allows BC 13 to add and at the same time proves that the increase of BC 1 3 is sufficient to completely remove the residual water vapor. Example 2: i-2 2-This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) (Please read the $ item on the back and then write this page) Order ___-_ B7__ Fifth, the invention description (,). Use the same etching tool as described above and refer to Example 1, carbon monoxide (C0) system It was monitored in a plasma ASH process in which the photo sister material was dissociated from an etched matrix. In this measurement system, a lead-bearing diode is manufactured by Laser Photon i cs. Co., Ltd. and is installed in a liquid nitrogen cooling cold head of Laser Ana 1 yt ics. . A 1 inch diameter, aspherical, anti-reflective coating, F / 1 zinc selenide (ZnSe) lens system is used to collimate the beam. The detector is a Graseby HgCdTe mode 1710112, with a 10 million Hertz (MHZ) bandwidth amplifier. The laser current is controlled by an I LX L igh wave I LX — 3620, and the temperature is controlled by a La ke Shore 11 (: a 910 eight controller .. the wavelength of light emitted by the laser dipole hip) The special excitation value is locked for carbon monoxide, ie, 4 · 7 microns, and a feedback signal is used to the laser diode. A signal corresponding to the third derivative of the absorption signal is used. Central Ministry of Economic Affairs Sealed by Pui Pong Consumer Cooperative — (please read the $ item on the back before filling in this page) After loading the semiconductor substrate into the etching chamber, oxygen flow rate is introduced into the chamber at a rate of 60 seem. The pressure The system was maintained at 1.5 Torr during the treatment period, and the carbonization amount was carried out throughout the treatment. The measurement system was averagely covered a second interval. The results from the carbon monoxide measurement are stated in Garden 4, A curve showing the gaseous pressure of carbon monoxide and the treatment time. It indicates that the end point of the treatment occurs after about 6 minutes K, at which point the carbon monoxide is lowered in the treatment chamber. Standard (CNS) A4 specification (210X29 7 mm) 317642 A7 Β7 5. Description of the invention (> /) The above example shows that the system of the present invention is quite entangled with the method system. K is used to monitor the gaseous molecular species in an exhaust line. In addition to the above, the system of the present invention It is particularly applicable to use in a load-locking chamber. Whenever a wafer plate is semi-conducted, it is generally placed first in a load-locking chamber, which is cleaned and / or vacuum-circulated for removal Atmospheric air and other pollutants. The crystal H plate system is then transferred from the load-defined chamber to its own processing chamber. The degree of purification and / or vacuum cycle is required to be determined by the pressure obtained in the vacuum cycle. However, this is not a A specific category is measured and there is no indication whether the residual force is mainly generated by water vapor (usually a result of substrate exposure to air), or other types of exhaust gas from the substrate (usually from previous processing steps). Therefore, its It is particularly convenient to monitor the water vapor in the load lock chamber. The jaundice-like method is particularly useful because the load lock only relies on purification, so vacuum measurement is not suitable. Ministry of Central Standards Bureau Beigong Consumer Cooperation Du Yin «. (Please read the precautions on the back before writing this page) By setting a diode laser strip on the exhaust line of a load lock chamber, it is Water vapor can be measured in the load-locked effluent after the purification cycle. If the required Mae gas level is known in the process, the purification time can be optimized to just satisfy the necessary cleanliness. Because The conversion step is known between the processes to calculate an effective part of the available processing chamber time in the semiconductor industry, and the effective cost advantage can be realized by this procedure. In a similar way, a moisture sensor is Placed on the exhaust of any room, it can be used to optimize the length of an initial purification or air circulation. -24- This paper scale is applicable to the Chinese National Standard (CNS) Λ4 specification (210X297 mm). Printed A7 B7 by the Beigong Pengong Consumer Cooperative V. Description of the invention ο It is usually used to remove large plates after loading the wafer board from the clean room, a previous processing step, a load lock room or a transfer room Ingredients. However, the present invention has been described with reference to half of the conduction processing tools, and those of ordinary skill will quickly attach importance to the system of the present invention, and can also adapt it to various applications. For example, it is expected that the chamber effluent monitoring system can also be used as a safety element in handling hazardous gases or vapors. It is well known that in this integrated circuit (IC) manufacturing process, a large number of dangerous and toxic gas systems are needed. Normally, these gas skeletons are kept in boxes, and their connected mines are evacuated. The tank exhaust, that is, the effluent, is drawn through an exhaust line, usually to a scrubber system. The room effluent monitoring system of the present invention is particularly good, and is suitable for use with gas. By installing an absorption spectroscopy system in the exhaust of the tank, a leak detection system provides instant feedback to the system. In particular, a system for high frequency (HF) detection, which has an absorption at a wavelength of 1 330 «microns, is consistent with the quite convenient emission of InGaAs Ρ dioxide, is expected. This embodiment is preferably used in conjunction with a visual and / or buzzer alarm system. The alarm system can be activated when an event occurs, such as: the detected absorption or gas concentration exceeds a predetermined limit. In addition * the detector can be connected to a valve control system, which will automatically "(on the gas crocodile column box or other valve to stop the flow of gas II. Filling in some skills will quickly be able to design and combine the appropriate The alarm system and controls in the system of the present invention are known by the use of well-known components, and the road and / or processor and mechanism are used for their control. -25- This paper standard is applicable to China National Standard (CNS) A4 (210X297mm) ---------- 1 ------- tr ------ test, (please read the notes on the back and then write this page 4) A7 __ B7___ 5 3. Description of the invention (> 3) Further discussion of this content has been omitted because it is considered to be within the common skill of people. In another embodiment of the present invention, the tank effluent monitoring system can be used The monitoring applied to the clean room environment. Because the air discharged from the clean room is usually returned to the clean room, the leakage of dangerous gases or the appearance of hazardous vapors in the clean room is particularly problematic. Therefore, the use of a light absorption The scientific measurement system can provide a particularly advantageous leak detection system in the exhaust of the clean room. As mentioned above with reference to the gas tank, this system can be used in conjunction with an alarm system. However, the present invention has been described in detail and refers to its specific embodiment, which will. It can be seen that a variety of changes and corrections can be caused The same as is applied without leaving the scope of the additional patent application. (Read the precautions on the back and then fill out this page.) Order 4 The Ministry of Economic Affairs Central Bureau of Customs and Industry Beigong Consumer Cooperative Printed Poly-26- This paper size Use China National Standard (CNS) Λ4 specification (210X297mm)