1 5 經濟部$揉準局貞工消费合作-裝 2 2 317523 Α7 Β7 五、發明説明（1 ) 本案是關於一種晶圓的加工方法，特別是一種使晶圓 表面再生的新方法。 在晶圓製造廠*尤其是8吋的晶圓製造廠*在積體電 路（1C)的製程中，常需要利用一些晶圓在製程中做為品質 測試的對象。此類供測試用的8吋晶圓，通常是由1C製程 中之不良品或是已使用過之測試鈒（test grade)晶圓回收 *經再處理成為再製品以供二次使用。 傳統再生晶圓的方法，是利用腐蝕（etching)技術來 去除晶圓表層的1C薄膜，再經過拋光程序·使晶圓的表面 品質恢復到使用前的狀態。1C薄膜通常為砂的氧化層、氮 化層和金靥層等組合*其組成端視晶圓之上進行過何種1C 製程而定，對於氮化層則需在150XT.〜180°C之碟酸溶液中 去除，而金靨或氧化層一般可用硫酸或鹽酸等酸性溶液去 除。利用腐触技術得到的结果，可分成兩方面來討論：對 晶圓腐蝕再生的品質而言並不能獲得理想的结果，如圖1A 所示，若將腐触後的晶圆（1)的表層（11)放大觀察，會發 現8吋面積中的每點深度不可能都一樣而顯得極不平整； 如果發現表面有殘留之薄膜後而再次腐触的结果*可如圖 1B顯示者，表層（11)向下腐触到（12)仍然不能得至ίΐ平整的 结果或者更形惡劣。Μ腐蝕技術再生晶圓的其他週邊效應 ，遇包括由於薄膜之組成及每層厚度皆會影響腐触液的選 擇及腐触時間，在無法確切掌握上述條件下*常需要人力 去判別第一道腐触程序是否已經完成•造成效率和品質的 降低。此外•腐触過程所製造之化學廢液·對於環境的影 -2 - (請先閲讀背面之注意事項再填寫本頁) Λ 本紙張尺度適用中國國家揉率（CNS ) Α4規格（210X297公釐〉 83.3.10,000 1 5 經濟部β揉準局負工消費合作；^裝 A7 B7 317523 五、發明説明（2 ) 響很大，霜要投入大童的人力、物力去做防污染處理。 經過腐触過後之晶Η表面*由於腐_率的變化，不但 如前所述*容易造成表面精度之不良。而且，許多殘留的 污染物附著於晶片表面，也會造成後續製程之負荷與困擾 〇 由於晶圓之再生需要求極高的加工精度與表面品質， 因此若欲Μ研磨手段對晶圓加工，必須選擇較高號數的砂 輪。對任一曾經參與實驗及現場作業的人士都可瞭解，高 號數之砂輪其孔隙極小而極易被填塞•但偏偏再生晶圓上 具有金靥*該金鼷層之軟質材料即極易填塞到砂輪的孔隙 中* Μ至於砂輪在輪磨切削中造成逐漸上昇的阻抗，最後 晶圓被壓迫而發生脆裂。基於前述輪磨技術的困難性與危 險性*所有的業者寧可不甘冒晶圓脆裂的風險•仍繼續延 用腐触技術來再生晶圓。 本案的目的，在提供一種晶圓再生的新方法，其不會 造成環境的汚染，也不會造成晶圓脆裂*易於自動化生產 且可提高再生晶圓的精密度。 本案的再一目的*在提供再生晶圓超精密之輪磨方法 ，其砂輪不會填塞使輪磨作業可順利而快速的進行，並獲 得極平整的再生晶圓表層。 上述目的，可藉由下述方法達成：磨床主軸上裝設高 號數鐵石砂輪後，先將砂輪削正、削銳•而欲再生晶圓， 其正面與砂輪相對且被吸附於磨床真空吸盤上，Μ2000〜 3500r*Pm的砂輪轉速，及200〜30〇rPm的欲再生晶圓工件轉 一 3 — 本紙張Λ度適用中國國家梂率（CNS > A4«L格（210X297公釐〉 I—II ·.- -_-——Ί裝-------訂—----- (請先閏讀背面之注意事項再填寫本夏) 83. 3.10,000 A7 _B7_ 五、發明説明（3 ) 1 速*和2〜6 w m/min的砂輪進給速度，讓砂輪與晶圓相對 旋轉而磨去欲磨削的晶圓薄膜，並同時對砂輪施予電解削 銳0接著更換另一更高號數的鑽石砂輪* M2000〜3500rpm 的砂輪轉速，及200〜300r*F>m的欲再生晶圓工件轉速，和4 5 〜12 w m/min的砂輪進給轉速，研磨晶圓表面並同時以電 解方式讓黏附於磨粒間的切屑隨著金靥结合劑的氧化層一 起脫落，取下晶圓洗淨並乾燥與測量，測量值在許可範圍 内，即得再生晶圓。 本案的進一步說明，可參考以下附圖所述的實施例。 10 (圖式的簡單說明） 圖1A係習用腐触技術處理的晶圓表面局部放大圖。 圖1B係圖1A的再腐触晶圓表面。 圖2A與圖2B分別為本案晶圓研磨的兩種流程圖。 圖3係本案研磨實施例配置圖。 15 (元件表) (圖 1A- 一 1B) 1—晶圓 11— -表層 12——次表層 (圖 2A- 一 2B) 經 濟 部 21—選擇砂輪 22— -修磨砂輪 23-_平整觀察 中 2金： 揉 24— 真空吸附晶圓 25—- -粗磨晶圓上之1C薄膜 準 局 員 26—— 更換砂輪 27— -修磨砂輪 28一一平整觀察 工 消 J|L 29— 精密輪磨晶圓 30— •電解 4—測童 合 作 社 2Φ % (圖3) 5-- -晶圓 51 — -主軸 52—砂輪 -4 - 本紙張尺度適用中國國家標準（CNS ) Α4说格U10X297公釐） 83. 3.10,000 -----^--:^ 裝------訂 J-----JTJI (請先Η讀背面之注$項再填寫本頁) 1 5 經濟部中^揉準局貝工消费合作社卻裝 ^17523 Α7 Β7 五、發明説明（4 ) 53—真空吸盤 54—工作台 6—電解裝置 如圖2A及圖3所示，本案再生晶圓超精密輪磨加工第 一種方法，包括： 選擇砂輪（21) ·替如使其至少為600號从上至2000號 間的鎌鐵金靥结合之鐵石砂輪； 修磨砂輪（22)，讓砂輪在研磨前被削正、削銳，Μ便 行平整研磨； 平整観察（23)，觀察修磨的砂輪是否達到平整，若砂 輪未達到平整的要求時*則再次修磨*直至平整為止； 真空吸附晶圓（24)，使欲再生的晶圓（5)置於真空吸 盤（53)上，該吸盤係置於穩定的旋轉裝置上，替如是磨床 的旋轉工作台（54); 粗磨晶圓上之1C薄膜（25)，配合電解（30)之處理*使 晶圓（1)上欲被研磨的厚度藉由砂輪（51)與旋轉工作台（54 )的相對旋轉而磨除的同時，讓黏附在磨粒間的切暦随著 金靥结合劑氧化層一起脫落*而不填塞砂輪磨粒之間隙； 更換砂輪（26)，取下先前粗磨使用的砂輪*並換為適 合作鏡面研磨的鐵石砂輪*鑽石砂輪並選擇3000〜10000 號為宜； 修磨砂輪（27)，使砂輪在研磨前施Μ削正、削銳處理 *便於精磨； 平整観察（28)，觀察修磨的砂輪是否達到平整’若砂 輪未達到平整的要求’則再次修磨’直到平整為止； 精密輪磨晶圓（29)，配合雷解（30)之處理’對先前粗 一 5 — (請先閲讀背面之注意事項再嗔寫本頁) 本紙張尺度適用中國國家標率（CNS ) Α4规格（210Χ297公釐) 83. 3.10,000 1 5 經濟部中30標準局貝工消费合作社214裝 A7 _B7五、發明説明（5) 磨過的1C晶圓實施精磨的同時，讓粘附於砂輪磨粒間的切 盾隨著金屬結合劑氧化層一起脫落*而不會填塞砂輪磨粒 間隙，妨礙精磨；以及 量測（4)，取下晶圓洗淨、乾燥與測量，測虽加工後 的精度TTV、TIR及表面粗縫度與加工後表面殘留之變質層 (damage layer)等，若在許可範圍內，譬如TTV在2 “ 內，TIR在内，表面粗链度在8nmRaM內*加工後 表面殘留之變質層在5 w 内在再經過撤光程序即得再生 晶圓。取得之再生晶圓主要供晶圓製造廠嘗試新技術或新 製程時，作為内部之製造與測試所需。 前述之再生晶圓超精密輪磨加工方法，可在一磨床及 一電解裝置（6)的配合下實施。如圖3所示，磨床可選擇直 立式磨床實施*方便放置再生晶圓（5)到磨床上6該磨床 至少具有一供砂輪（52)設置的主軸（51) ·並有一連置一真 空吸盤（53)的可旋轉工作台（54) *該真空吸盤（53)之上緣 供放置欲再生晶圓（5)。藉由電解裝置（6)對磨床的主軸（ 51)施以正甯歷，及將負電壓接近砂輪（52) *讓固置在真 空吸盤（53)上的欲再生晶圓（5) *可Μ被砂輪（52)，如粗 磨用的鑽石砂輪或精磨用的鑽石砂輪施Μ兩次磨削，而獲 致平整又光滑的再生晶圓表面。 本案第二種實施例流程圖如圖2Β所示·前述用於研磨 再生晶圓（5)的磨床•如果採用雙铀或多軸式磨床，供設 置粗磨砂輪及精磨砂輪*則不必中途更換砂輪，先將各砂 輪修磨並調整好加工準備事項，則可以在粗磨完舉後*直 —6 — (請先閲讀背面之注意事項再填寫本頁) 裝. —訂 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 1 5 經濟部中|準局貝工消費合作社f 7523 A7 _B7_五、發明説明（6 ) 接進行精磨的工作，而一次完成研磨’當然在研磨中仍需 同時進行電解（30)。 在H 第~*種再生晶圓的研磨法及第二種再生晶圓研 磨法中被應用的磨床工作條件設定’可參考下述數據： 粗磨時* 2500〜3000ri>m的砂輪（52)轉速，及200〜300 rpm的欲再生晶圓（5)工件轉速，和2〜6«m/min的砂輪（52 )進給速度*讓砂輪（52)與晶圓（5)相對旋轉而磨去欲磨削 的晶圓（5)薄膜厚度，再更換鐵石砂輪為高號數的鐵石砂 輪作精磨，M2500〜3000rp>m的砂輪（52)轉速，及200〜300 rpm白勺欲再生晶圓（5)工件轉速，和4^~^12ium/min白勺砂輪進 給轉速，研磨晶圓。 以上兩種實施例的電解裝置（6)如圖3所示，正電壓加 置於磨床主軸（51)，及電解裝置（6)負電壓加置於砂輪（52 )的目的，是讓欲再生晶圓（5)在砂輪（52)研磨時，被削去 的氧化砂或多晶砂粉曆，或氮化層與金屬層能夠隨著電解 處理，而自砂輪（52)的磨粒間隙中脫落，使砂輪（52)的磨 粒不致被P且塞，而得Μ對晶圓（5)作持縝等功噩的磨削加 工，讓研磨晶圓（5)的時間及品質得以控制。至於供晶圓（ 5)放置的真空吸盤（53)，一般是以陶瓷形成，該吸盤若舉 Μ轉盤供多片待磨晶圓放置，則研磨的速度和效率可更進 一步提高*而磨床若是以夾具將單片晶圓夾住供研磨，則 效率雖不及轉盤事，但不失為一可行方式。 本案對於製造不良晶圓提供了非常良好的再生處理， 讓晶圓於再生之時沒有傳統技術的酸触不平，也沒有在酸 -7 - (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 本紙張尺度適用中國國家樣準（CNS ) A4規格（210X297公釐） 1 A7 B7 五、發明説明（7 ) 触時的污染發生，為—優良的晶圓處理技術，故提出以下 的專利請求，該請求僅僅是本案申請專利範圍的主要敍述 ，非用Μ限制本案的等效主張及對簡易變化實施的主張， 在此特別聲明。 5 10 (請先閲讀背面之注意事項再填寫本頁) .裝· 訂 15 經 2金 揉 準 局 貝 工 合 作 社 2难 製 8 本紙張尺度適用中國國家標準（CNS ) Α4規格（2丨〇χ297公釐）1 5 Ministry of Economic Affairs $ Zhongzhun Bureau Zhengong Consumer Cooperation-Equipment 2 2 317523 Α7 Β7 V. Description of the invention (1) This case is about a wafer processing method, especially a new method to regenerate the wafer surface. In the wafer manufacturing plant *, especially the 8-inch wafer manufacturing plant * in the integrated circuit (1C) process, it is often necessary to use some wafers as the object of quality testing in the process. These 8-inch wafers for testing are usually recovered from defective products in the 1C process or used test grade wafers. * Reprocessed into remanufactured products for secondary use. The traditional method of regenerating wafers is to use etching technology to remove the 1C film on the surface of the wafer, and then go through the polishing process to restore the surface quality of the wafer to the state before use. The 1C film is usually a combination of sand oxide layer, nitride layer and gold layer. Its composition depends on what 1C process has been carried out on the wafer. For the nitride layer, it needs to be 150XT. ~ 180 ° C It can be removed in the dish acid solution, and the gold luteum or the oxide layer can be generally removed with acidic solutions such as sulfuric acid or hydrochloric acid. The results obtained by the corrosion technology can be divided into two aspects to discuss: the quality of the wafer corrosion regeneration can not achieve the ideal results, as shown in Figure 1A, if the surface of the wafer (1) after corrosion (11) Enlarged observation, you will find that the depth of each point in the 8-inch area cannot be the same and appear extremely uneven; if you find that there is a residual film on the surface and then the corrosion result again * as shown in Figure 1B, the surface ( 11) Down to touch (12) still can not get a flat result or worse. Other peripheral effects of MW etching technology regenerated wafers, including the composition of the film and the thickness of each layer will affect the selection of the corrosion solution and the corrosion time. If you cannot accurately grasp the above conditions, you often need human to determine the first Has the rotting procedure been completed? Caused a reduction in efficiency and quality. In addition, the chemical waste liquid produced in the process of decay and the impact on the environment-2-(please read the precautions on the back before filling in this page) Λ This paper size is applicable to China National Crushing Rate (CNS) Α4 specification (210X297 mm 〉 83.3.10,000 1 5 Ministry of Economic Affairs β-Quasis Bureau's negative labor consumption cooperation; ^ install A7 B7 317523 V. Description of the invention (2) The sound is very loud, the frost needs to invest the child's manpower and material resources to do anti-pollution treatment. After the touch, the surface of the crystal H * changes not only as described above, but also easily causes poor surface accuracy. Moreover, many residual contaminants adhere to the surface of the wafer, which will also cause load and troubles in the subsequent process. The regeneration of wafers requires extremely high processing accuracy and surface quality, so if you want to use M grinding to process wafers, you must choose a higher number of grinding wheels. Anyone who has participated in experiments and field operations can understand, The high number of grinding wheels have very small pores and are easy to be filled. • However, there is gold on the reclaimed wafer. * The soft material of the gold layer is very easy to fill into the pores of the grinding wheel. * As for the grinding wheel cutting in the wheel grinding Causes a gradually increasing resistance, and finally the wafer is pressed to cause embrittlement. Based on the difficulty and danger of the aforementioned wheel grinding technology * All manufacturers would rather not take the risk of wafer embrittlement • Continue to use the corrosion technology to regenerate Wafer. The purpose of this case is to provide a new method of wafer regeneration that will not cause environmental pollution or cause wafer cracking. * It is easy to automate production and can improve the precision of recycled wafers. One objective * To provide a super-precision wheel grinding method for regenerated wafers, the grinding wheel will not be packed so that the wheel grinding operation can be carried out smoothly and quickly, and a very flat surface of the regenerated wafer is obtained. The above purpose can be achieved by the following methods Achieved: After installing a high-number iron stone grinding wheel on the grinding machine spindle, the grinding wheel is first cut and sharpened. To regenerate the wafer, the front face of the grinding wheel is opposite to the grinding wheel and is adsorbed on the grinding machine vacuum chuck. Rotation speed, and 200 ~ 30rPm of wafers to be regenerated turn 3 — This paper is suitable for China National Frame Rate (CNS > A4 «L grid (210X297mm) I—II · .- -_-— —Ί 装 ------- —----- (please read the notes on the back before filling in this summer) 83. 3.10,000 A7 _B7_ V. Description of the invention (3) 1 speed * and 2 ~ 6 wm / min wheel feed speed, Rotate the grinding wheel and the wafer relatively to grind off the wafer film to be ground, and apply electrolytic sharpening to the grinding wheel at the same time. Then replace another diamond diamond wheel with a higher number * M2000 ~ 3500rpm grinding wheel speed, and 200 ~ 300r * F> m the speed of the wafer workpiece to be regenerated, and the grinding wheel feed speed of 4 5 ~ 12 wm / min, grinding the surface of the wafer and at the same time electrolytically allowing the chips adhering between the abrasive particles to follow the gold-tether bond The oxide layer falls off together, the wafer is removed, washed and dried and measured, and the measured value is within the allowable range, that is, the regenerated wafer. For further description of this case, reference may be made to the embodiments described in the following drawings. 10 (Simple description of the drawing) Figure 1A is a partial enlarged view of the wafer surface treated by the corrosion technique. FIG. 1B is the re-corroded wafer surface of FIG. 1A. 2A and 2B are two flowcharts of wafer grinding in this case. Fig. 3 is a configuration diagram of a grinding example in this case. 15 (component table) (Figure 1A- 1B) 1-wafer 11-surface layer 12-sub-surface layer (Figure 2A-1 2B) Ministry of Economy 21-select grinding wheel 22--grinding wheel 23-_ flat observation 2 gold: knead 24—vacuum suction wafer 25—- 1C thin film bureau on rough grinding wafer 26—replace the grinding wheel 27—-grind the grinding wheel 28 one by one and observe the work leveling J | L 29—precision wheel grinding Wafer 30— • Electrolysis 4—Tester ’s Cooperative 2Φ% (Figure 3) 5-- -wafer 51 —-spindle 52—grinding wheel-4-This paper scale is applicable to the Chinese National Standard (CNS) Α4 said grid U10X297 mm) 83. 3.10,000 ----- ^-: ^ Installed ------ order J ----- JTJI (please read the $ item on the back and then fill in this page) 1 5 In the Ministry of Economy ^ According to the Beigong Consumer Cooperative Association, it is installed ^ 17523 Α7 Β7 V. Description of the invention (4) 53—Vacuum chuck 54—Workbench 6—Electrolysis device As shown in FIGS. 2A and 3, the regenerated wafer ultra-precision wheel mill in this case The first method of processing includes: Selecting the grinding wheel (21) · For example, to make it at least the 600th Si-iron-hetero-bonded iron grinding wheel from top to 2000; repair grinding wheel 22), allow the grinding wheel to be sharpened and sharpened before grinding, so M will be leveled and polished; flatness inspection (23), observe whether the grinding wheel is flat, if the grinding wheel does not reach the leveling requirement * then grinding again * Until flat; Vacuum suction wafer (24), put the wafer (5) to be regenerated on the vacuum chuck (53), the chuck is placed on a stable rotating device, such as the rotary table (54) of the grinding machine ); Roughly grind the 1C film (25) on the wafer, with the treatment of electrolysis (30) * Make the thickness of the wafer (1) to be polished by the relative rotation of the grinding wheel (51) and the rotary table (54) At the same time of grinding, let the cutting sticking between the abrasive grains fall off along with the oxide layer of the gold-adhesive bond * without filling the gap between the abrasive grains of the grinding wheel; replace the grinding wheel (26) and remove the grinding wheel used for the previous rough grinding * And replace it with an iron stone grinding wheel suitable for mirror grinding * Diamond grinding wheel and choose 3000 ~ 10000 No .; Grinding grinding wheel (27) to make the grinding wheel be sharpened and sharpened before grinding * It is convenient for fine grinding; Smooth observation ( 28), observe whether the grinding wheel is flat. If the grinding wheel is not flat Request 'then re-grind' until it is flat; precision wheel-grinding the wafer (29), in conjunction with the processing of thunder solution (30) 'to the previous rough one 5 — (please read the precautions on the back before writing this page) The paper scale is applicable to China National Standard Rate (CNS) Α4 specification (210Χ297mm) 83. 3.10,000 1 5 The Ministry of Economic Affairs Zhong 30 Standards Bureau Beigong Consumer Cooperative 214 Pack A7 _B7 Fifth, the description of the invention (5) The polished 1C crystal While carrying out the fine grinding of the circle, the cutting shield adhering to the abrasive grains of the grinding wheel is peeled off together with the oxide layer of the metal bond * without filling the gap between the abrasive grains of the grinding wheel and hindering the precise grinding; and measuring (4), removing Wafer cleaning, drying and measurement, measuring the accuracy TTV, TIR and roughness of the surface after processing and the residual damage layer on the surface after processing, if it is within the allowable range, such as TTV within 2 ", Including TIR, the roughness of the surface is within 8nmRaM * After processing, the modified layer remaining on the surface is regenerated within 5 w and then the wafer is regenerated. The reclaimed wafers obtained are mainly used by the wafer fabs to try new technologies or new processes as necessary for internal manufacturing and testing. The aforementioned super-precision wheel grinding process of regenerated wafers can be implemented with the cooperation of a grinder and an electrolysis device (6). As shown in Figure 3, the grinder can be implemented with an upright grinder. * It is convenient to place the regenerated wafer (5) on the grinder. 6 The grinder has at least one spindle (51) for the grinding wheel (52). (53) The rotatable table (54) * The upper edge of the vacuum chuck (53) is used to place the wafer (5) to be regenerated. The electrolysis device (6) applies a positive calendar to the main shaft (51) of the grinding machine, and brings the negative voltage close to the grinding wheel (52) * to allow the wafer to be regenerated (5) fixed on the vacuum chuck (53) * can Μ is grinded twice by grinding wheels (52), such as diamond grinding wheels for rough grinding or diamond grinding wheels for fine grinding, to obtain a flat and smooth surface of the reclaimed wafer. The flow chart of the second embodiment of this case is shown in FIG. 2B. • The aforementioned grinding machine for grinding regenerated wafers (5). • If a dual uranium or multi-axis grinding machine is used, it is not necessary to install a rough grinding wheel and a fine grinding wheel *. Replace the grinding wheel, first grind each grinding wheel and adjust the processing preparation items, you can after the rough grinding is completed * Straight-6-(please read the precautions on the back before filling in this page).-The size of the paper is applicable China National Standards (CNS) Α4 specification (210X297 mm) 1 5 Ministry of Economic Affairs China | Public Bureau Beigong Consumer Cooperatives f 7523 A7 _B7_ V. Description of invention (6) Then carry out the work of fine grinding and finish grinding at one time It is still necessary to conduct electrolysis (30) at the same time during grinding. Refer to the following data for the setting of grinding machine working conditions used in the H ~~ th regenerated wafer grinding method and the second regenerated wafer grinding method: During rough grinding * 2500 ~ 3000ri> m grinding wheel (52) Rotation speed, and the speed of the workpiece to be regenerated from 200 to 300 rpm (5), and the feed speed of the grinding wheel (52) from 2 to 6 «m / min * Make the grinding wheel (52) rotate relative to the wafer (5) and grind Remove the thickness of the wafer (5) film to be grinded, and then replace the iron stone wheel with a high-number iron stone wheel for precision grinding, M2500 ~ 3000rp> m wheel speed (52), and 200 ~ 300 rpm Round (5) workpiece rotation speed, and 4 ^ ~ ^ 12ium / min grinding wheel feed rotation speed, grinding wafer. The electrolysis device (6) of the above two embodiments is shown in FIG. 3, the purpose of adding a positive voltage to the grinding machine spindle (51), and a negative voltage of the electrolysis device (6) to the grinding wheel (52) is to let When the wafer (5) is ground by the grinding wheel (52), the oxidized sand or polycrystalline sand powder that has been cut off, or the nitride layer and the metal layer can follow the electrolytic treatment, but from the abrasive grain gap of the grinding wheel (52) Shedding off, so that the abrasive particles of the grinding wheel (52) will not be blocked by P, and M will make a careful grinding process on the wafer (5), so that the time and quality of grinding the wafer (5) can be controlled. As for the vacuum chuck (53) for the placement of the wafer (5), it is generally formed of ceramics. If the chuck uses an M turntable to place multiple wafers to be ground, the grinding speed and efficiency can be further improved * and if the grinder is Using a fixture to clamp a single wafer for polishing, although the efficiency is not as good as the turntable, it is a feasible way. This case provides a very good recycling process for manufacturing defective wafers, so that the wafers are not touched by traditional technology when they are regenerated, and they are not in acid-7-(please read the precautions on the back before filling this page) · The size of the paper format is applicable to China National Standards (CNS) A4 specification (210X297mm) 1 A7 B7 5. Invention description (7) Pollution at the time of contact, for-excellent wafer processing technology, the following patents are proposed Request, this request is only the main narrative of the scope of the patent application in this case. The equivalent claims and the claims on the implementation of simple changes are not restricted by Μ, and they are specifically stated here. 5 10 (Please read the precautions on the back before filling out this page). Packing and ordering 15 Jing 2 Jin Kou quasi-bureau co-operative cooperative 2 Difficult to make 8 This paper scale is applicable to China National Standard (CNS) Α4 specifications (2 丨 〇χ297 Mm)