TW316949B - Magnetic field detecting device - Google Patents

Abstract

A magnetic field detecting device at least comprises of: (1) one conductive stack structure, formed on one semiconductor substrate, in which the conductive stack structure at least contains multiple adjacent ion doped layer, and ion density of each ion doped layer decreases from top to down; (2) one first conductive contact, located one first end of upmost layer of the multiple ion doped layers; (3) one second conductive contact, located on second end of upmost layer of the multiple ion doped layers, current via the first contact flows to the conductive stack structure, and out from the second conductive contact, one magnetic field with horizontal direction functions on the magnetic field detecting device.

Description

316949 A7 B7 __ 5. Description of the invention () 5.1 Field of the invention: The present invention relates to a magnetic field sensor, in particular to a magnetic field sensing device that can simultaneously measure the size and component of a magnetic field. 5.2 Background of the invention: The Hall sensor is a semiconductor element that uses the Hall effect to measure the size of the magnetic field. The Hall effect occurs when an electric field and a magnetic field act on a conductor plate at the same time, as shown in the first circle. When a current 丨 shown in a circle is applied in one direction, and a downward heavy field B is generated, a Hall electric field Eh is generated, the direction of which is shown in the circle, and its magnitude is obtained according to the following formula:

Eh = Rh, B / A where Rh stands for the Hall coefficient (Hai I coefficient), and A stands for the cross-sectional area of the guide plate "Viran Hall sensors are commonly used to measure the size of the magnetic field, but for the perpendicular to the Huo The magnetic field of the Seoul sensor cannot be easily measured by the following measurement. 5_3 Purpose and Summary of the Invention: Printed by the Employees ’Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back and fill in this page) In the above background of the invention, the conventional sensors have many shortcomings. The main purpose of the present invention is to provide a magnetic field sensing device that can simultaneously measure the magnitude of each component of the magnetic field. The present invention includes at least a conductive stack φ structure formed on a semiconductor substrate. The conductive stacking structure contains at least a number of the paper standards applicable to the Chinese national standard (CMS > A4 specification (210X297 mm), Central Bureau of Standards, Ministry of Economic Affairs, Beigong Consumer Cooperation Du Printing Equipment A7 ― 一 --_____ B7 V. Invention description () Immediately adjacent ion doped layer, and the ion concentration of each layer decreases from top to bottom. The first conductive contact point is located at the first end of the uppermost layer of the ion doped layer, and the second conductive contact point is located at the uppermost layer of the ion doped layer The second end. Current flows into the conductive stack structure through the first contact point and flows out from the second conductive contact point to measure the horizontal magnetic field acting on the magnetic field sensing device. The present invention further includes a plurality of adjacent conductive stack structures The isolation zone next to it is used to limit the current flowing through the conductive stack structure. Δ · 4 turns type brief description: the first ® shows the traditional Hall sensor β second circle type shows the implementation of the invention Examples of perspective two. Figure 1B shows the perspective circle of another embodiment of the present invention. The first circle C shows the cross-section of the sensor of the second country B. The second DB shows the cross-section of the sensor Circle, and the current is magnetized The path of the shadow. The second circle shows the sensor of another embodiment of the invention, which is used to measure the magnetic field in different directions at the same time. 5-5 Detailed description of the invention: The second figure A shows the perspective circle of the embodiment of the invention The stack 21 contains multiple layers (three layers in this embodiment) of ion-doped layers 20, 22, and 24, and their doping concentrations are sequentially reduced. That is to say, the first layer of paper is suitable for China. Standard (CNS) A4 specification (210X29? Mm) (please read the precautions on the back before filling in this page) Pack. Order 51β949 Printed Α7 Β7 by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Description of invention () The second layer 22 is high, and the doping concentration of the second layer 22 is higher than that of the third layer 24. In this embodiment, N-type impurities are used, and the impurity concentration of the first layer 20 is N ′ of the first layer 22 The doping concentration is n +, and the doping concentration of 4 of the third layer is N. The second B circle shows a perspective circle of another embodiment of the present invention, in addition to the above-mentioned stack 4 2 1 sensor, a trench is also used 1 2 or 囡 充 的 沟 榜 12 is used as the isolation area between the sensors of the stack 21. The second C circle display The sectional view of the stacked sensor 21 in the second image B is formed by a conventional process. In the tenth embodiment, the first ion implantation and diffusion are performed to form the first layer 20 with a concentration of N * + , And then perform the second ion implantation and diffusion to form a second layer 22 with a concentration of N +, and the third ion implantation and diffusion to form a third layer 24 with a concentration of n. In this embodiment, such as arsenic is used Or N-type impurities of phosphorus, the doping concentrations of N + +, N + and N are 5E15, 5E14 and 5E13 atoms / cm2, respectively. Refer to the second diagram A, the length of the stacked sensor 21 is 11, t; 1 3. Depth 15 is 100, 10, and 5 microns, respectively. After the isolation layer 14 (eg, pad oxide layer) is formed on part of the surface area of the substrate 16, a metal layer 17 is formed to form contact points 26 and 28 . The finished stacked sensor 21 is usually covered with a layer of high-μ protective material 18 so that the stacked sensor 21 will not be affected by adjacent sensors or semiconductor elements. This paper scale is applicable to China National Standard (CNS) M specifications (210 X 297 mm) C Please read the precautions on the back and then fill out this page j-book. Thread one five, invention description () A7 B7 Due to the first layer 20 has the greatest conductivity, so the current flowing into the contact point 26 will approach the surface portion through the first layer 20, and then flow out from the contact point 28. However, when a vertical magnetic field is applied, the path will be changed. ≫ The current in the first layer 20 will be affected by the Lorentz force relative to the magnetic field, making the electrons under the downward force , So that the current flows to the second layer 22; even when the magnetic field is strong enough, it will cause the current to flow to the third layer 24 »The second D shows the cross-sectional circle of the stacked sensor 21, the dotted parts 23 and 25 are The path of the current affected by the magnetic field, wherein the magnetic field strength of the current on path 25 is greater than the magnetic field strength of the current on path 23. Furthermore, since the impedance of the third layer 24 is the largest, the resistance of the current on the path 25 is greater than the resistance of the current on the path 23. For each magnetic field strength, there will be a corresponding impedance, and this impedance can be obtained from the voltage and current ratio between the connection points 26 and 28 "--------- install ---- --Order (please read the precautions on the back before filling in this page) After the impedance value printed by the Employee Consumer Cooperative of the Central Ministry of Economic Affairs of the Ministry of Economic Affairs, the stack sensor 21 can be used as a sensor to measure the external magnetic field Strength of. When a magnetic field is opposite to the magnetic field direction of the second graph A, it can be obtained by reversing the current direction. Furthermore, when the direction of a magnetic field and the magnetic field of the second circle A are 90 degrees, the stacked sensor 21 can be rotated horizontally by 90 degrees. However, a more convenient method is to use the knot shown in the third circle to simultaneously measure the B1 magnetic field and the B2 magnetic field direction. Among them, the sensors 40 and 42 are used to measure the two magnetic field directions. China National Standard (CNS) A4 specification (210X297mm) Line V, i, description of invention () and sensors 44 and 46 are used to measure two B2 magnetic field directions. As for other magnetic fields that are at an angle to the B1 magnetic field and the B2 magnetic field and are horizontal, they can also be measured by the sensors 40, 42, 44, and 46. Refer to the third figure, where the area 41 or 43 is a trench or a filled trench to serve as an isolation between the sensors, so that the current is limited to each sensor. In the present invention, the sensors 40, 42, 44, and 46 can be used to measure the magnetic field strength of about 0.5-10 gauss. The above are only preferred embodiments of the present invention and are not intended to limit the scope of the patent application for the present invention; all other equivalent changes or modifications that have been completed without departing from the guesswork disclosed by the present invention should be Included in the following patent application. ---------- Installation-- (Please read the precautions on the back before filling out this page) Order I. The paper standard printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs is applicable to the Chinese National Standard (CNS) A4 Specification (210X297 Gongluo)

Claims (1)

6. Patent application Fanyuan A8 B8 C8 D8 Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy 1. A magnetic field sensing device, at least comprising: a conductive stack structure formed on a semiconductor substrate, wherein the conductive stack structure contains at least There are a number of tight ion-doped layers, and the ion concentration of each ion-doped layer decreases from top to bottom; a first conductive contact point is located at the first curl of the uppermost layer of the bran-doped sub-layer; And a second conductive contact point, located at the second end of the uppermost layer of the plurality of ion-doped layers, current flows into the conductive stack 4 structure through the first contact point, and flows out from the second conductive contact point, a A horizontal magnetic field acts on the magnetic field sensing device. 2. A magnetic field sensing device as claimed in item 1 of the patent application park, wherein the above-mentioned ion doped layer is doped with N-type ions. 3. The magnetic field sensing device as described in item 1 of the patent application park, wherein the above conductive stack * structure includes at least a first layer located at the uppermost end of the conductive stack structure; a second layer located at the top of the conductive stack structure The middle position; and a third layer at the bottom end of the conductive stack structure. 4. The magnetic field sensing device as claimed in item 3 of the patent application, wherein the concentration of the first layer is about 5E15 atoms / cm2, the concentration of the second layer is about 5E14 atoms / cm2, and the concentration of the third layer is about It is 5E13 atoms / cm2. (Please read the precautions on the back before filling in this page). The size of this paper is applicable to China National Standard Falcon (CNS) 84 specifications (210 > < 297mm) ABCD 316949 VI. Application for patent scope 5. If applying Patent Fan Gu's item 3 magnetic field sensing device, wherein the length of the conductive stack structure is about 100 microns, the width of the conductive stack structure is about 10 microns' and the depth of the conductive stack structure is about 5 microns β 6. The magnetic field sensing device of patent application item 1 further includes a protective layer formed on the first conductive contact point and the second conductive contact point. 7_ The magnetic field sensing device as described in item 1 of the patent application group further includes a plurality of isolation regions near the conductive stack structure to limit the current flowing through the conductive stack structure. 8. A magnetic field sensing device, comprising at least: a conductive stack structure formed on half of the hip guide base, wherein the conductive stack structure includes at least a plurality of immediately adjacent ion-doped layers, and the ions of each ion-doped layer The concentration decreases from top to bottom; a first conductive contact is located at the first end of the uppermost layer of the plurality of ion-doped layers; a second conductive contact is located at the uppermost layer of the plurality of ion-doped layers The second Angstrom current flows into the conductive stack structure through the first contact point and flows out from the first conductive contact point. A horizontal magnetic field acts on the magnetic field sensing device; and a plurality of isolation regions are adjacent to the Next to the conductive stack structure, the current flowing through the conductive stack structure is limited. 14 This paper scale is applicable to China National Standards (CNS) 8.4 specifications (21〇 < 297mm) {Please read the precautions on the back before filling out this page} Consumer Cooperation Du Printed A8 B8 C8 D8 Printed and applied for by the Consumer Labor Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 9 Scope of Patent Application 9 For example, the magnetic field sensing device of patent application No. 8 in which the above-mentioned ion doped layer is N Ion doping. 10. A magnetic field sensing device as claimed in item 8 of the patent application park, wherein the above-mentioned conductive stack structure includes at least a first layer located at the uppermost end of the conductive stack structure; a second layer located at the top of the conductive stack structure The middle position; and a third layer 'is located at the bottom end of the conductive stack structure. 11. The magnetic field sensing device according to patent application No. 10, wherein the concentration of the first layer is about 5E15 atoms / cm2, the concentration of the second layer is about 5E14 atoms / cm2 'and the third layer The concentration is about 5E13 atoms / cm2. 12. The magnetic field sensing device according to item 10 of the patent application park, wherein the length of the hail-guiding stack structure is about 100 microns, the width of the conductive stack structure is about 10 microns, and the depth of the conductive stack structure is about It is 5 microns. 13_ The magnetic field sensing device as described in item 8 of the patent application scope further includes a protective layer formed on the first conductive contact point and the second conductive contact. 1 4 · A magnetic field sensing device, at least comprising : A plurality of conductive stack structures are formed on a semiconductor substrate, wherein the conductive stack structure includes at least a majority of ion-doped layers, and the ion concentration of each ion-doped layer decreases from top to bottom; Use the Chinese National Standard Rate (CNS) A4 specification (210X297mm) (please read the precautions on the back before filling in this education) • Packing. Order A8 δδ C8 ____________D8 for consumer cooperation of the Central Standards Bureau of the Ministry of Economic Affairs. Patent Fan Guo '" ~ --- a first conductive contact point, located at the first end of the uppermost layer of each of the plurality of ion-doped layers of the conductive stack structure; and a first conductive contact point, located at The second end of the uppermost layer of the plurality of ion-doped layers of each conductive stack structure, current flows into the conductive stack structure through the first contact point, and from the second conductive contact At the point of outflow, at least one horizontal magnetic field acts on the magnetic field sensing device ❶ 15. For example, in the magnetic field sensing device of patent application No. 14, the above-mentioned ion doped layer is doped with N-type ions. 16. For example, the magnetic field sensing device of patent application No. 14 in which the above conductive stack structure includes at least a first layer located at the uppermost end of the conductive stack structure; a second layer located at the middle of the poor conductive stack structure; And a third layer, located at the bottom end of the conductive stack structure. 17. For example, in the magnetic field sensing device of patent application No. 16, where the concentration of the first layer is about 5E15 atoms / cm2, the second The concentration of the layer is about 5E14 atoms / cm2, and the concentration of the third layer is about 5E13 atoms / cm;}. 1 8. The magnetic field sensing device according to item 16 of the patent application, wherein the above-mentioned conductive stack structure The length is about 100 micrometers, the certainty of the conductive stack structure is about 10 micrometers, and the depth of the conductive stack structure is about 5 micrometers. 19. The magnetic field sensing device according to item 14 of the patent application scope further includes- Protective layer formed on the first One conductive contact point and the second conductive contact point. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) I II 11 11 11 II |, 11! I ordered !. II in I ^ (please Read the precautions on the back first and then fill out this page j —---- 1 Coffee 49 A8 B8 C8 D8 々, patent application scope 20. For example, the magnetic field sensing device of the patent application scope item 14 contains more isolation areas, Adjacent to the plurality of conductive stack structures to limit the current flowing through the conductive stack structure. (Please read the precautions on the back before filling in this page). Packing. Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. The paper size is applicable to China National Standard (CNS) A4 (210X297mm)