ΚΊ B7 ：128〇2 五、發明説明（/ ) - _ - 本發明係Μ於陰極射線管顥示器用之波束掃描速度調變 的領域並尤其係關於一可撓性専賴輔肋偏向線圈。 發明之背景 在陰棰射線管之波束偏向方面大家都知道掃描速度調變 並係被用來增強顯示畫面的感貴銳度。掃描速度調變之基 本構想就是令電子束在掃描至影像由明變暗或由暗變明的 過渡區時調變水平赛描速度。舉例說吧，當一掃描線在一 黑暗背景上掃擊一明亮垂直線條時*其目的即當其水平掃 描掃至明亮垂直線條所在之處…時，-螢藜亮度會立即提升至 一最大值，而後，在通過該線條”後，會立即下降至其最小 值位準。然而，其電子束電流之上升及下降時間卻不是瞬 間的。在未設有掃描速度調變的顯示器中，就會使邊緣模 糊之遇渡處具有灰色陰影而被感貴為一種軟化或缺乏銳度 〇 具有波束掃描速度調變時，就會設有電路，Κ預測即將 過渡至亮度區之位置*並改變其水平掃描速度，因而，在 郯近該過渡之暗區處使波束加速，亦即· Μ超過平均掃描 率之速率予Κ掃描。將此種電子束加速所爭取的時間運用 在該過渡之明亮側邊上•於此處使電子束減速至低於平均 掃描率•如此一來*加速與減速彼此抵銷，使得掃描水平 線所花費的缌時間才會保持常數。在過渡至明亮區Μ前增 加暗區中之電子束掃描速度的&應會產生撞擊璘質的電子 束電流較小，因此•才會產生較小的磷質激發•此舉使暗 f - 區成為更暗。亮區中之減媛掃描速度促使波束激發磷質歷 本纸張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） 裝 訂 線 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 經濟部中央標準局員工消费合作社印裝 ΚΊ ________ Β7 五、發明説明（D — ~ 一段稍長時間並會產生就在跨過過渡區後的位置更為光亮 。在邊緣過渡處之速度調變的全般效應乃在促使其過渡比 如係以固定速率掃描時顯得更為清晰。在自一明亮背景轉 為一暗區之過渡處，則為顛倒此種程序。其淨效應乃在增 加影像邊緣之慼覺銳度，如此一來|其畫面才會顯現為更 加清晰並具有更大解析度。 利用一額外可搡作線圈來施加此種波束速度調變，以改 變波束之水平偏向。由一驅動器電路Μ取自該亮度視頻信 號的資訊來驅動該額外線圈。。 - 該SVM (掃描速度調變；線圈"'可為一平繞®片線圈，在 某些早期SVM應用中 > 係將該叠片線圈裝設在純度/靜態 聚合磁鐵座上，以便在電子束脫離電子鎗之集焦（G4)柵極 後影響它們。印刷電路線圈亦頗有名並可將它們安放在靜 態聚合磁鐵下面或偏向轭下面。 將SVM線圈安放在電子鎗之緊鄰附近時會減小所加至電 子束的SVM線圈場強度。該等罨子鎗通常均包含可導磁的 鐵磁材料（例如網），此種材料會將SVM埸侷限於導磁材 料中。該等電子鎗亦包含非鐵磁傳導材料，SVM場會在此 種材料内感應渦流，Κ致於減弱其效應。簡言之，電子鎗 之鐵質及傳導材料具有部分消散SVM埸並防止電子-束與其 發生相互作用的傾向。 舉例說吧，可對抗一特殊SVM德圈裝設位置中所固有之 屏蔽及消散不利影響的方法為增加其SVM驅動電流*可是 1 - ，此舉卻裔要具有增加裝置功率消耗之改良性能電流驅動 -5 - 本紙張尺度適用中國國家標隼（CNS ) Α4規格（210Χ 297公釐） 裝 訂 線 (請先閱讀背面之注意事項再填寫本頁) ΚΊ Β7 經濟部中央標率局負工消費合作社印裝 五、發明説明 (^) - - 1 1 I 器 0 可 增 加 線 圈 之 圈 數 S W 達 成 合 意 SVM 僑 向 基 敏 度 9 但 1 1 1 是 f 此 種 電 感 增 加 可 能 會 產 生 使 該 SVM 線 圈 之 高 頻 性 能 降 1 I 低 至 低 於 顯 示 信 號 之 頻 譜 组 合 所 需 之 頻 率 的 結 果 〇 可 改 良 讀 先 1 1 SVM 偏 向 萑 敏 度 的 方 法 為 使 該 SVH 線 圈 之 定 位 位 置 儘 可 能 1 1 接 近 電 子 束 ， 因 為 f 磁 場 強 度 係 與 間 隔 距 離 的 •— 次 方 之 倒 背 * 1 1 之 1 數 成 比 例 而 減 小 0 但 是 > 例 如 管 頸 上 之 定 位 卻 可 能 產 生 其 注 意 1 | 他 頸 部 姐 件 之 機 械 安 装 問 題 9 該 等 其 他 頸 部 姐 件 的 可 能 安 事 項 1 1 放 位 置 係 與 此 種 S VH 線 圈 位 置 重 叠 〇 如 此 一 來 其 定 位 與 再 填 1 - 寫 裝 I —— 管 子 表 面 接 觸 之 任 何 SVM 縷 圈 就 該 線 圈 及 與 其 所 成 之 連 本 頁 接 兩 者 言 均 應 具 有 — 最 小 横 斷 面 _尺 寸 才 行 0 1 發 明 之 概 述 1 | 一 種 具 有 掃 描 波 束 速 度 調 變 之 陰 極 射 線 管 顯 示 乃 係 包 括 具 有 —_- 頸 部 之 陰 極 射 線 管 以 及 用 產 生 一 電 子 束 之 電 子 鎗 1 訂 0 將 一 偏 向 軛 安 裝 於 陰 極 射 線 管 上 >λ 供 電 子 束 偏 向 之 用 0 將 具 有 一 供 導 體 製 造 用 側 面 之 一 第 — 彈 性 支 座 與 具 有 一 1 I 供 導 體 製 造 用 側 面 之 — 第 二 彈 性 支 座 予 Μ 重 fi 及 封 包 起 來 1 » 以 順 應 其 頸 部 周 邊 0 將 — 第 — 線 圈 HgfT 圖 型 製 造 為 該 第 一 支 1 | 座 上 之 導 體 Μ 及 將 一 第 二 線 ΓΗΤΓ 圈 圖 型 製 造 為 該 第 二 支 座 上 之 線 導 體 0 — 導 電 連 接 將 第 — 線 圈 圖 型 與 第 二 線 圈 圖 型 聯 结 起 1 I 來 〇 — 連 接 器 耦 合 掃 描 速 度 調 變 電 流 > 以 使 該 第 線 圈 nsn 画 1 ’型 及 第 二 線 圈 圖 型 授 能 i 供 掃 描 波 束 速 度 調 m 之 用 〇 1 | 圖 式 之 簡 單 說’ 明 1 〇 ΓΒΤ 圆 1 A 表 示 SVH 偏 向 線 圈, 及 6 安 放 位 置 之 發 明 具 體 實 例 1 1 1 1 1 1 1 1 1 1 本纸張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐）ΚΊ B7: 128〇2 V. Description of the invention (/)-_-The present invention is in the field of beam scanning speed modulation for cathode ray tube displays and in particular relates to a flexible auxiliary deflection coil. Background of the Invention It is well known that the beam deflection of a cathode ray tube is modulated by the scanning speed and is used to enhance the expensive sharpness of the displayed image. The basic idea of scanning speed adjustment is to make the electron beam adjust the horizontal scanning speed when scanning to the transition area where the image changes from light to dark or from dark to light. For example, when a scan line sweeps a bright vertical line on a dark background * The purpose is to scan the horizontal brightness to where the bright vertical line is ..., the brightness of the quinoa will immediately increase to a maximum value , And then, after passing the line ", it will immediately fall to its minimum level. However, the rise and fall time of its electron beam current is not instantaneous. In a display without scan speed modulation, it will The intersection where the edge is blurred has a gray shadow and is perceived as a kind of softening or lack of sharpness. When the beam scanning speed is adjusted, a circuit is provided to predict the position of the transition to the brightness area * and change its level The scanning speed, therefore, accelerates the beam near the dark area of the transition, that is, the rate at which Μ exceeds the average scanning rate for K scanning. The time that this electron beam accelerates is used on the bright side of the transition On • Here, the electron beam is decelerated to below the average scan rate. • This way * acceleration and deceleration cancel each other out, so that the time spent scanning the horizontal line will remain constant. Increasing the scanning speed of the electron beam in the dark area before the bright area M should produce a smaller electron beam current that impacts the qualitative substance, so • it will produce a smaller phosphorous excitation. This will make the dark f-area become Darker. The reduced scan speed in the bright area causes the beam to excite the phosphor calendar. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economics ΚΊ ________ Β7 V. Description of Invention (D — ~ A little longer and will produce a brighter position after crossing the transition zone The general effect of the speed modulation at the edge transition is clearer when the transition is scanned at a fixed rate, for example. At the transition from a bright background to a dark area, this procedure is reversed. The net effect is to increase the sharpness of the edge of the image, so that the picture will appear clearer and have a higher resolution. Use an extra coil to apply This kind of beam speed modulation changes the horizontal deviation of the beam. A driver circuit M takes the information from the brightness video signal to drive the additional coil.-The SVM (scanning speed modulation; coil " 'can be a flat Wrapped® coils, in some early SVM applications > The laminated coils were mounted on a purity / static polymer magnet holder to affect the electron beams after they were released from the grid (G4) grid of the electron gun. Printing Circuit coils are also well-known and can be placed under a static polymer magnet or under a yoke. Placing the SVM coil in the immediate vicinity of the electron gun will reduce the field strength of the SVM coil applied to the electron beam. These hemp guns are usually All contain ferromagnetic materials (such as nets) that can conduct magnetism, which will limit the SVM field to magnetically conductive materials. These electron guns also contain non-ferromagnetic conductive materials, and the SVM field will induce eddy currents in this material. K causes its effect to be weakened. In short, the iron and conductive materials of the electron gun have a tendency to partially dissipate the SVM field and prevent the electron beam from interacting with it. For example, the way to counteract the negative effects of shielding and dissipation inherent in the installation location of a special SVM German circle is to increase its SVM drive current * but it is 1-, this move requires improved performance current that increases the power consumption of the device Driver-5-This paper scale is applicable to China National Standard Falcon (CNS) Α4 specification (210Χ 297mm) binding line (please read the precautions on the back before filling this page) ΚΊ Β7 Ministry of Economic Affairs Central Standard Rate Bureau Unemployment Consumer Cooperative Printed 5. Description of the invention (^)--1 1 I device 0 can increase the number of turns of the coil SW to achieve the desired SVM overseas base sensitivity of 9 but 1 1 1 is f. This increase in inductance may cause the SVM coil to The high-frequency performance is reduced by 1 I. The result is as low as the frequency required for the spectrum combination of the display signal. The method for improving the readout 1 1 SVM bias sensitivity is to make the positioning position of the SVH coil as close to the electron beam as possible 1 1 , Because the magnetic field strength of f is the distance from the separation distance to the back of the power * 1 1 The number of 1 is proportional to the decrease of 0 but> For example, the positioning on the neck of the tube may cause its attention 1 | Mechanical installation of his neck sister parts 9 Possible safety issues of these other neck sister parts 1 1 Placement It overlaps with the position of this S VH coil. As a result, its positioning and refilling 1-Writing I-Any SVM coil that touches the surface of the tube should be connected to this coil and the connection to this page. With-the smallest cross-section _ size 0 0 Summary of the invention 1 | A cathode ray tube display with scanning beam speed modulation includes a cathode ray tube with a _- neck and an electron gun for generating an electron beam 1 Order 0 Install a deflection yoke on the cathode ray tube > λ for electron beam deflection 0 will have one for the side of the conductor manufacturing — The elastic support and the side with a 1 I for the manufacture of the conductor — The second elastic support is made of Μ 重 fi and is packaged 1 »to conform to the periphery of its neck 0 will — the first — coil HgfT pattern is made as the first Support 1 | Conductor Μ on the seat and a second line ΓΗΤΓ loop pattern is made as a line conductor on the second support 0-conductive connection connects the first-coil pattern with the second coil pattern 1 I来 —The connector is coupled with a scanning speed modulation current > to enable the first coil nsn to draw a 1 'type and the second coil pattern to energize i for scanning beam speed adjustment m1. 1 〇ΓΒΤ circle 1 A represents the SVH deflection coil, and 6 specific examples of the invention of the placement 1 1 1 1 1 1 1 1 1 1 1 This paper scale is applicable to the Chinese National Standard (CNS) Α4 specification (210X297 mm)
五、發明説明（）- _ ~ 圖1B表示一變換發明性SVM線圈安放位置。 圖2A表示一發明具體實例之立體分解圖。 豳2B表示一變換發明性SVM線圈安放位置。 圖3 A表示一發明具體實例之導體型。 圖3B表示一供導體製造用支柱層。 圖3C表示圖2管頸之C/C處之一横斷面圖，以表示導體 圖型之周邊安放位置。 圖3D為圖3C之斷面線H/H處之一放大圖形。 圖4 A表示一變換發明具體寊&之一第一導體画型及支柱 層0 圖4B表示一變換發明具體實例之一第二導體圖型及支柱 層。 圖4C表示其定位如同圖3D之一横斷面圖。 詳细說明 經濟部中央榡準局員工消费合作杜印裝 (請先閏讀背面之注意事項再填寫本S ) 參照圖1A，一電視影像管乃係在其後端32處配有一電子 鎗，該電子鎗發射一股電子流*並係將該股電子流朝向其 對立或前端處之一磷幕34加速。該等電子均為移動電荷並 構成一股罨流，因而*將該等電子被入射磁場所餳向。以 —水平掃描率將該電子束偏向，Μ映顯連續線條，及Μ — 垂直掃描率予Μ偏向，Κ促使該等速鑛線條在該營幂上成. 為彼此垂直間隔。該項掃描界定一試映圖，並係將此試映 圖以每一連績線之間條場或速續掃描予Μ依次重覆的。 該罨視影像或陰極射線管，乃係在電子鎗後端32與螢幂 34之間具有一漏斗形或喇叭形部分38。將垂直偏向及水平 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 經濟部中央標準局員工消费合作杜印製 ΚΊ Β7 五、發明说明（） — — 偏向用之偏向線圈安裝於該管之一漏斗部分38上之一備向 扼裝置上*該等偏向線圈典型者均係被繞製在一塑膠轆形 式或襯底72上。該等垂直及水平镐向線圈均係沿著該漏斗 Μ與霣子束軸線42平行的方向延伸並沿著該管之喇叭形表 面38跟進。將該等垂JS偏向繞组按環形線圈方式包袤在一 透磁搛心上Μ及該等鞍形水平偏向繞姐則係鄰近該管之漏 斗38。 將一可撓性印刷電路掃描速度調變（或SVM)線圈50順著 -· —-— 管頸3 0安裝。在圖1Α中*將掃描速度調變線圈50之定位鄰 接於管頸的位置並以一靜態聚合磁锇糸统52装於其上方。 例如，在採用一ΡΙ88 C0TY Μ電子鎗總成之陰極射線管中 ，SVM線圈係安放在該缌成之主透鏡G5-G6外圍。SVM線 圈之線圈導體在徑间方向是對稱地繞著管子X軸周圍且平 行於管子Ζ軸方向可安裝。該掃描逑度調變線圈50亦可安 放於鄰近漏斗38之管頚部位30而偏向娓總成80之水平偏向 線圈則安裝於其上方，和圖1Β中所表示的一樣。將一股授 能電流經由一導電連接器88耦合至線圏50*此舉可產生水 平偏向掃描速度響應於顯示視頻邊緣過渡之。掃描波束速 度調變之原理Μ及該項授能電流之取得均係大家所熟悉的 ，因此，將不予說明。 - 圈2Α表示陰極射線管漏斗38 ·頸部30及霉子鎗结構之一 部分立體分解圖。此乃一項發明性具體實例*此處使可撓 性掃描速度調變線圈50與管，頸表掘吻合，而其中心軸則與 靜態聚合磁鐡52之Z軸相同。將該連接器導體表面88定位 本纸張尺度通用中國國家標準（CNS ) A4規格（2I0X297公釐） 11111 裝 —訂 線 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作杜印製 ΚΊ Β7 五、發明説明（） — _ ' 在Y軸上並可根據藉耦合至一 SVM驅動放大器所要求的情 況予Μ定向，以便伸向磷幂34或燈座32 (未在圖中表示） 。定位在+Υ或-Υ軸上時會提供該等線圈之正確角度安放位 置，此舉會產生最佳S敏度。將該靜態聚合磁鐵52安放在 管頸30上沿著Ζ軸之方向，用Μ完成靜態聚合，並叠裝在 SVM線圈50之外圍。圖2Β表示SVM線圈50安放於頸部之一 變換頸部位置，其位置鄰近於漏斗38，Μ便在鴒向軛80之 水平偏向線圈下面.*為例示SVM線圈之位置，故囫2Β省掉 該水平偏向線圈。 - 圖3Α表示用來製造電導體層Ll_及L3之軌跡及線圈圖型。 有多種技術可用於製造一具有一特定圖型之電導體。舉例 說吧，可採用一種印製方法，這裡係將一種導堪油墨或液 體沉積在一支柱層上，K產生所需要的軌跡及線圈圈型。 可將導電油墨或液體用和一種噴墨糸统中所用者相同的噴 霧方法予以沉積。亦可採用接觸印製技術*這裡係將表示 其合意軌跡及線圈圖型之一種導電油墨或液體轉移至一支 柱層。另外一種已知的方式為利用一導體層，這裡乃偽將 該導體予Μ選擇性除去並留有該期望軌跡圖型之其餘導體 0 在圃3Α中*就環路'1及環路3 •與環路2及環路.4等所 表示的軌跡及線圈圖型都很類似，因而*當予Κ製造為導 電層L1及L3並定位在一支柱層L2±時，圈型Ρ1之導體才會 重叠圖型P3之相同導體。例如*在圖3A中，環路1之導體 t - A2(即中心導體）重叠環路3之導體Α·2 ，同樣，躭環路 本紙張尺度適用中國國家樣隼（CNS ) Α4規格（2丨0Χ297公釐〉 辦衣 訂 線 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央榡準局員工消費合作社印製 ΚΊ Β7 五、發明説明（） - _ ~ 1言，導體B2重叠B’2 ，並由此類推，就環路2及4言， C2與C'2重«Μ及D2與1Γ2重β。 圈3Β表示支柱層L2。膜層L1與L3之間的電氣連接係經由 支柱層L2在Η10及Η20處之導電路徑提供。該等導霣路徑與 膜層L1之位點Η1及Η2連接，亦與膜層L3之位點Η11及H2ia 接。如此一來，才會將線圈環路1與線圈環路3電氣連接 成串聯* Μ及將線_環路2與線圈環路4霣氣連接成串聯 。在此種發明總成中，會將姐別Α之環路導體，亦即* A1-3與A’1-3 ，重II成一種多^詹结構，並且將六根導體所 產生之場予K有利地產生在和由_—單層结構之三根導體所 佔用者相同之一週邊區域中。如此一來* 一項就一已知偏 向S敏度言所必需之場強度才可由多重線圈層予Μ產生在 一狹小弦角内，此舉就此種SVM線圈结構言才會使其偏向 番敏度有利地達到最佳情況。此種有利造形亦適用於姐別 Β ，（：及D之環路導體，和圖3C中所表示的情形一樣。 在圖3Α中，尺寸Μ為該等中心導體之間的間隔（圖中所 示後面附有2者），並係被選擇為等於管頸周邊的大約三 分之一。此種近似尺寸必須考慮導賭層L1或L3之厚度再加 上支柱層L2之厚度。在此類線圈圖型實例中，其支柱餍 L2為可撓性並製作成圓柱形且其半徑等於管頸之半.徑。當 上述裝置裝於管子表面且與表面吻合時，環路1之中間導 體Α2與Β2的間隔尺寸Μ就會導致A2與Β2對Ζ軸形成120° 的張角，和圖3C中所表示的情形一樣。選擇該等環路之間 1 - 的間隔Μ ，以便將它們對稱地定位在管子Ζ軸周圍，因而 -10 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） I n I n n It I I I n 1^1 I I n n T I n n n I ___ (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印裝 Κ7 Β7 五、發明説明（） - _ - ，導體A2及D2在圓馬上的間隔和導體B2及C2之間的間隔相 同。如此一來，就圖3A中所示之軌跡圖型及圖3C中所示之 徑向位置言，一雙棰磁場會建立在管子Y軸上並與X及Z 軸兩者垂直。此種Y軸場會導致Z袖方向運動之電子束沿 水平或X軸偏向。選擇120°導體間隔時才會使該線圈所 產生之第三諧波場為零。將SVM線圈場之第三諧波設定為 零時才會消除SVM對三束電子束之間產生不同锔向角的機 率·亦即，SVM作業不會產生錯誤彩色邊緣。 圖3C為貫穿管頸之一徑向斷面.圖，為求例示之簡單計， 故省掉頸部内之電子鎗结構並將"'該可撓性線圈糸统之厚度 予Μ放大，K提供額外清晰度。未被偏向之轚子束係對管 子Ζ軸形成對稱且分別置於X袖方向。該斷面部分之定位 乃係諸如在截過線圈環路導體組A * B ，（：及D 。當將其 支座與管頸吻合時，中心導體（後面附帶2的）才會形成 如前面所逑之間隔。該等後面附2導_A2及A’2 ，與B2及V. Description of the invention ()-_ ~ FIG. 1B shows a shifting position of the inventive SVM coil. Figure 2A shows an exploded perspective view of a specific example of the invention. Bin 2B represents a shifting position of the inventive SVM coil. Fig. 3A shows a conductor type of a specific example of the invention. Fig. 3B shows a pillar layer for conductor production. Fig. 3C shows a cross-sectional view at C / C of the neck of Fig. 2 to show the location of the periphery of the conductor pattern. FIG. 3D is an enlarged view of the section line H / H in FIG. 3C. Fig. 4A shows a first embodiment of the first invention and a pillar layer of a specific embodiment of the transformation invention. Fig. 4B shows a second embodiment of the second conductor pattern and the pillar layer of a specific embodiment of the transformation invention. FIG. 4C shows a cross-sectional view positioned like one of FIG. 3D. The detailed description of the consumer cooperation cooperation printed by the Central Bureau of Economy of the Ministry of Economic Affairs (please read the precautions on the back before filling in this S). Referring to FIG. 1A, a TV video tube is equipped with an electron gun at the rear 32 The electron gun emits a stream of electrons * and accelerates the stream of electrons toward a phosphor screen 34 at its opposite or front end. These electrons are mobile charges and constitute a stream of flow, so * These electrons are directed by the incident magnetic field. Deflect the electron beam at a horizontal scan rate, M reflects continuous lines, and M at a vertical scan rate deflects M, and K promotes the isokinetic lines to be vertically spaced from each other on the camp. This scan defines a trial map, and the trial map is scanned in sequence or continuously from each consecutive line to M in order. The video or cathode ray tube has a funnel-shaped or trumpet-shaped portion 38 between the rear end 32 of the electron gun and the fluorescent power 34. Apply the vertical deviation and horizontal paper standards to the Chinese National Standard (CNS) Α4 specification (210X297mm). The Ministry of Economic Affairs Central Standards Bureau employee consumer cooperation du printed ΚΊ Β7. 5. Description of the invention () — The deflection coil for deflection is installed on A yoke device on a funnel portion 38 of the tube * These deflection coils are typically wound on a plastic reel or substrate 72. The vertical and horizontal pick-up coils extend in a direction that the funnel M is parallel to the beam axis 42 and follow along the trumpet surface 38 of the tube. The vertical JS bias windings are wrapped around a magnetically permeable core in the form of a loop coil and the saddle-shaped horizontal bias windings are adjacent to the funnel 38 of the tube. A flexible printed circuit scanning speed modulation (or SVM) coil 50 is installed along the neck 30. In FIG. 1A *, the positioning of the scanning speed modulation coil 50 is adjacent to the position of the neck of the tube, and a static polymeric magnetic osmium system 52 is mounted thereon. For example, in a cathode ray tube using a PI88 C0TY M electron gun assembly, the SVM coil is placed around the main lens G5-G6. The coil conductor of the SVM coil is installed symmetrically around the X axis of the tube and parallel to the Z axis of the tube. The scanning degree modulation coil 50 can also be placed on the pipe section 30 adjacent to the funnel 38 and the horizontal deflection coil deflecting to the assembly 80 is installed above it, as shown in FIG. 1B. Coupling an energized current to the coil 50 via a conductive connector 88 * This can produce a horizontal deviation to the scanning speed in response to the transition of the displayed video edge. The principle of scanning beam speed modulation Μ and the acquisition of the energizing current are familiar to everyone, and therefore will not be explained. -Circle 2A shows a partial exploded perspective view of the structure of the cathode ray tube funnel 38 · neck 30 and mold gun. This is an inventive specific example. Here, the flexible scanning speed modulation coil 50 is matched to the tube and neck surface, and its central axis is the same as the Z axis of the static polymerized magnet 52. Position the conductor surface 88 of this connector on this paper scale. General Chinese National Standard (CNS) A4 specification (2I0X297mm) 11111 Binding-binding line (please read the precautions on the back before filling this page) Employees of the Central Standards Bureau of the Ministry of Economic Affairs Consumer Cooperation Du Printed ΚΊ Β7 V. Description of the invention () — _ 'On the Y axis and can be oriented according to the conditions required by coupling to an SVM drive amplifier, so as to extend to the phosphor power 34 or lamp holder 32 (not Represented in the figure). Positioning on the + Υ or -Υ axis will provide the correct angular placement of these coils, which will produce the best S-sensitivity. The static polymerization magnet 52 is placed on the neck 30 in the direction of the Z axis, static polymerization is completed with M, and stacked on the periphery of the SVM coil 50. Fig. 2B shows that the SVM coil 50 is placed on one of the necks to change the neck position, the position is close to the funnel 38, and M is below the horizontal deflection coil of the yoke 80. * is an example of the position of the SVM coil, so the 2VM is omitted The horizontal deflection coil. -FIG. 3A shows the trajectory and coil pattern used to manufacture the electrical conductor layers L1_ and L3. There are various techniques that can be used to make an electrical conductor with a specific pattern. For example, a printing method may be used. Here, a conductive ink or liquid is deposited on a pillar layer, and K generates the desired track and coil pattern. The conductive ink or liquid can be deposited by the same spraying method used in an inkjet system. Contact printing technology can also be used. * Here, a conductive ink or liquid representing its desired trajectory and coil pattern is transferred to a pillar layer. Another known way is to use a conductor layer, here is to pseudo-selectively remove the conductor and leave the remaining conductors of the desired trajectory pattern 0 in the garden 3Α * loop 1 and loop 3 • It is very similar to the trajectory and coil pattern shown by Loop 2 and Loop .4, etc. * The conductor of the loop type P1 is only when the pre-K is made into conductive layers L1 and L3 and positioned on a pillar layer L2 ± The same conductor of pattern P3 will overlap. For example, in Figure 3A, the conductor t-A2 of the loop 1 (ie, the center conductor) overlaps the conductor A · 2 of the loop 3. Similarly, the paper size of the loop is applicable to the China National Falcon (CNS) A4 specification (2丨 0Χ297mm> Clothes line (please read the precautions on the back before filling in this page) Printed ΚΊ Β7 by the Consumer Cooperative of the Central Bureau of Economics of the Ministry of Economy V. Description of invention ()-_ ~ 1 words, conductor B2 overlaps B'2, and so on, for loops 2 and 4, C2 and C'2 weigh «M and D2 and 1Γ2 weigh β. Circle 3B represents the pillar layer L2. The electrical connection between the film layers L1 and L3 Provided by the conductive paths at the pillar layers L2 at H10 and H20. These conductive paths are connected to the positions H1 and H2 of the film layer L1, and also connected to the positions H11 and H2ia of the film layer L3. The coil loop 1 and the coil loop 3 are electrically connected in series * M and the wire_loop 2 and the coil loop 4 are connected in series. In this invention assembly, the loop of sister type A will be The conductors, that is, * A1-3 and A'1-3, weigh II into a multi-jam structure, and the field generated by the six conductors is advantageously generated in K and _ single The three conductors of the layer structure occupy the same peripheral area. In this way, a field strength necessary for a known deviation from the S sensitivity can be generated by the multiple coil layers within a narrow chord angle, This move only makes this SVM coil structure optimal for its bias sensitivity to achieve the best situation. This advantageous formation is also applicable to the sister B, (: and D loop conductor, and shown in Figure 3C The situation is the same. In Fig. 3A, the dimension M is the interval between the isocenter conductors (the two with the back attached in the figure), and is selected to be equal to about one third of the circumference of the neck. This approximation The size must consider the thickness of the guide layer L1 or L3 plus the thickness of the support layer L2. In this type of coil pattern example, the support L2 is flexible and made into a cylindrical shape with a radius equal to half of the neck. When the above device is installed on the surface of the pipe and coincides with the surface, the spacing size M of the intermediate conductors A2 and B2 of the loop 1 will cause A2 and B2 to form an opening angle of 120 ° to the Z axis, as shown in Figure 3C The situation is the same. Choose the interval 1-between the loops Μ , In order to position them symmetrically around the Z axis of the tube, so -10-this paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) I n I nn It III n 1 ^ 1 II nn TI nnn I ___ (Please read the precautions on the back before filling out this page) K7 Β7 printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Description of the invention ()-_-, the distance between conductors A2 and D2 on the circle and between conductors B2 and C2 The interval between them is the same. In this way, in terms of the trajectory pattern shown in FIG. 3A and the radial position shown in FIG. 3C, a pair of decanter magnetic fields are established on the Y axis of the tube and are combined with both X and Z vertical. This Y-axis field causes the electron beam moving in the direction of the Z sleeve to deflect along the horizontal or X-axis. When the 120 ° conductor spacing is selected, the third harmonic field generated by the coil is zero. Setting the third harmonic of the SVM coil field to zero will eliminate the possibility that the SVM will produce different curly angles between the three electron beams. That is, the SVM operation will not produce false color edges. Fig. 3C is a radial cross-section through the neck of the tube. The figure is a simple calculation for illustration, so the electron gun structure in the neck is omitted and the thickness of the flexible coil system is enlarged to M, K Provide additional clarity. The unbiased beams of zizi are symmetrical about the Z axis of the tube and are placed in the direction of the X sleeves respectively. The positioning of the cross-section is such as when passing through the coil loop conductor group A * B, (: and D. When the support is matched with the neck of the tube, the center conductor (with 2 attached behind) will be formed as before The distance between the two. These are followed by 2 leads _A2 and A'2, and B2 and
B'2才會如圖3C中所表示的繞著Z軸團成120°的張角。 同樣，就導體C2及C’2 ·與D2及D’2言，它們亦係繞著Z 袖周圍構成120°的張角。將該順應支座定位在管頸上， 因而，使該等後面.附2導體繞著+Y及-Y袖對稱放置。而且 ’由於該等環路之大小及安放在支座L2上的结果厂才會使 該等後面附2導體繞著+X及-χ*|對稱定位。利用導體88在 環路圖型中的物理位置來提供該等順應線圏在管頸上之角 度位置用的旋轉參考，此舉，才會產生不同導體姐別鏡著不 同管軸的合意對稱安放位置。 -11 - 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） 訂 線 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標孪局員工消费合作社印製 A7 B7 五、發明説明（） - _ - 圖3D為圖3C在其斷面線H/H處之一放大斷面圖。為求例 示之簡化計，此圖乃係不顧可撓性支柱L2及線圈導體層 LI，L3與管頸周邊之順應情形。此放大横斷面圖表示導體 B1-3與B’l-3之吻合對準。支柱層L1與支柱層L3之間的電 氣連接係由通過支柱層L2乏一専霣路徑提供，該導電路徑 則與墊座H1處之膜層1及墊座H11處之膜層2連接。有利 地加強此種發明之可撓性SVM線圈糸統的方法為將該可撓 性SVM線圈系铳包封在管頸之周邊四周。如此一來，該線 圈糸统才會與玻璃完成接觸並可能接近電子束。 就有利方式言，偏向S敏度藉苗此2袖為中心之導體 A2- A’2 ，B2-B’2，C2-C’2，D2-D'2等之 120° 角度位置 而增強。藉將該等導體安放在120°處時，該線圈系统所 產生之埸才會具有零值第三諧波成分。具有零值第三階波 場時，電子束才會獲得更多有用的SVM偏向，因為，SVM 驅動電流並未產生第三階諧波場，此種第三階諧波場會造 成外圍電子束相對於中心束為準之有害的微小偏向。 進一步加強偏向S敏度的方法為將該等線圈層予K定位 ，俾使該等Z軸導體A1-3與A’l-3 ，B1-3與B’l-3 ， C1-3與C’：l-3 ，D1-3與D'l-3等重β起來。圖3D表示導體 Β1-3與B’l-3之吻合重叠對準。此種特色會使其周濂埸限 制於一單獨膜層中。如此一來，其第三階場才會保持於零 ，但由於線圏環路連接成串聪，故霉感值匝數之平方成正 比增加。 t - 可製作多層線圈糸統，以達成期望電感值而第三諧波埸 -12 - 本紙張尺度適用中國國家樣準（CNS ) Α4規格（210X297公釐） ---------^-------1T------線， (請先Μ讀背面之注意事項再填寫本頁) 經濟部中央樣準局員工消費合作社印裝 A7 _____B7 五'發明説明（） - ~ 仍為零。圖4A表示一種線圈圖型，將此種圖型製造為一導 體作為多層線圈系统之一第一層。其大小參數係根據早先 的說明。將圖4A之線圈圖型pi製造為支柱層L10上之導電 層1 。導霣連接洞眼H10及H20伸過支柱層L10 。困4B表 示多層線圈糸统之一另外層之一線圈晒型P3，此處係將授 能電流由導髓88耦合至線圈環路3及4 。將線圈圖型P3製 造為支柱層L20上之一導電層L30並將支柱層L10與L20予 Μ重叠’因而，使H10及H20與墊座接觸區H11及H21對 準。跟著對準之後，將該等等i洞眼與接觭墊可導電地連 结起來，亦可將該等支柱層予K二個連接至另一個。玆將 該裝配完妥之多層線圈Μ放大横斷面圖表示在圖4C中（斷 面位置係根據圖3C之說明）。圈4C表示Β姐導體*導電洞 眼與墊座之對準情形，將該等部分均被重疊起來，因而， 使導體Β1重叠導體Β ' 1等。 可用許多方法製造本發明之SVM線圈總成，但是，在一 可撓性支柱層上採用光敏導體層之光刻技術卻可節省材料 成本並大量節省製造工具和裝配成本。舉例說吧，繞製 SVM線圈時箱要鏡線機及線圈支承結構，此外，接線必裔 具有终端，Μ提供連接之用。若有其他印刷電路線圈且需 與該等線圈之線路連接時，若有必箱跨過每一線圈現路而 與一中央饋霄點交叉。可是，這些線路連接都是不利的* 因為，它們會增加該線圈之横斷面尺寸，並且係代表另一 作業製造步猱及額外成本。， . 將本發明之SVM線圈系統製造在一可掼性支柱層上並Μ -13 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------批衣---q---IT------^ (請先閲讀背面之注意事項再填寫本頁) 第8 3 1 Ο 3 U 6號真利申請案B'2 will form a 120 ° opening angle around the Z axis as shown in Fig. 3C. Similarly, as far as the conductors C2 and C'2 and D2 and D'2 are concerned, they also form a 120 ° opening angle around the Z sleeve. Position the compliant support on the neck of the tube, so that the back-side 2 conductors are placed symmetrically around the + Y and -Y sleeves. Moreover, the size of the loops and the result of the placement on the support L2 are that the factory will make the following 2 conductors symmetrically positioned around + X and -χ * |. The physical position of the conductor 88 in the loop pattern is used to provide a rotational reference for the angular position of the compliant coil on the neck of the tube. This will produce a desired symmetrical placement of different conductors and different tube axes. position. -11-This paper scale is applicable to China National Standard (CNS) Α4 specification (210Χ 297mm) Threading (please read the precautions on the back before filling in this page) A7 B7 printed by the Employee Consumer Cooperative of the Central Standardization Bureau of the Ministry of Economic Affairs Description of the invention ()-_-Figure 3D is an enlarged cross-sectional view of one of the cross-sectional lines H / H in Figure 3C. For the sake of simplification for illustration, this figure is based on the compliance of the flexible strut L2 and the coil conductor layers LI, L3 and the periphery of the neck. This enlarged cross-sectional view shows the alignment of conductors B1-3 and B'l-3. The electrical connection between the pillar layer L1 and the pillar layer L3 is provided by a short path through the pillar layer L2, and the conductive path is connected to the membrane layer 1 at the pedestal H1 and the membrane layer 2 at the pedestal H11. A method for advantageously enhancing the flexible SVM coil system of this invention is to encapsulate the flexible SVM coil system around the periphery of the neck. As a result, the coil system will come into contact with the glass and may approach the electron beam. In an advantageous manner, the bias S-sensitivity is enhanced by the 120 ° angular position of the conductors A2-A'2, B2-B'2, C2-C'2, D2-D'2, etc., centered on the 2-sleeves. By placing these conductors at 120 °, the coil generated by the coil system will have a third harmonic component with zero value. When there is a zero-valued third-order wave field, the electron beam will obtain more useful SVM bias, because the SVM drive current does not generate a third-order harmonic field, and this third-order harmonic field will cause peripheral electron beams. The harmful slight deviation relative to the central beam. The method of further enhancing the bias S sensitivity is to position the coil layers K, so that the Z-axis conductors A1-3 and A'l-3, B1-3 and B'l-3, C1-3 and C ': L-3, D1-3 and D'l-3 equal weight β together. Fig. 3D shows the coincidence overlap alignment of conductors B1-3 and B'l-3. This feature will limit Zhou Zhou to a single layer. In this way, the third-order field will remain at zero, but because the coil loops are connected in series, the square of the number of turns of the mold inductance increases proportionally. t-Multilayer coil system can be made to achieve the desired inductance value and the third harmonic field -12-This paper scale is applicable to China National Standards (CNS) Α4 specification (210X297mm) --------- ^ ------- 1T ------ line, (please read the precautions on the back before filling in this page) A7 _____B7 Five 'Invention Description () -~ Is still zero. Fig. 4A shows a coil pattern which is manufactured as a conductor as the first layer of one of the multilayer coil systems. The size parameter is based on the earlier description. The coil pattern pi of FIG. 4A is manufactured as the conductive layer 1 on the pillar layer L10. The guide holes H10 and H20 extend through the pillar layer L10. Sleepy 4B indicates one of the other layers of the multi-layer coil system, one coil type P3, where the energizing current is coupled from the guide tube 88 to the coil loops 3 and 4. The coil pattern P3 is made as a conductive layer L30 on the pillar layer L20 and overlaps the pillar layers L10 and L20. Therefore, H10 and H20 are aligned with the pedestal contact areas H11 and H21. After the alignment, the i-holes and the pads can be conductively connected, and the two pillar layers can be connected to the other two. The enlarged cross-sectional view of the assembled multilayer coil M is shown in FIG. 4C (the cross-sectional position is according to the description of FIG. 3C). Circle 4C indicates the alignment of the conductor B * conductor hole and the pedestal, and all these parts are overlapped, so that the conductor B1 overlaps the conductor B'1 and so on. Many methods can be used to manufacture the SVM coil assembly of the present invention. However, the photolithography technique using a photosensitive conductor layer on a flexible support layer can save material costs and save a lot of manufacturing tools and assembly costs. For example, when winding the SVM coil, the box needs a mirror wire machine and a coil support structure. In addition, the wiring must have a terminal, and M provides the connection. If there are other printed circuit coils and need to be connected to the lines of these coils, if necessary, the box will cross each coil and cross a central feed point. However, these circuit connections are disadvantageous * because they increase the cross-sectional size of the coil and represent another manufacturing step and additional cost. ,. The SVM coil system of the present invention is manufactured on a supportable support layer and M -13-This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) --------- approved Clothing --- q --- IT ------ ^ (Please read the precautions on the back before filling out this page) No. 8 3 1 Ο 3 U 6 Zhenli application case
經濟部中央標準局員工消費合作社印製 一溴圈圈型製造於每一側面上。 在下列條件下來鑑定該S V Μ線圏系統之性能： 管型27V ' 電子鎗 Ρ I 8 8 , C I] Τ Υ Μ 超高壓三萬伏 耷頸直徑2 9公厘 偏向軛障礙三公厘（自基座至偏向軛背8 7公厘） 自基座至SVM線圈前緣84公厘 該SVM線圈糸统具有下列規格： 缉轉寬度：0 . 8公厘 導體間隔：0 . 5公匣 導體厚度：8至10徴米 支座厚度：0 . 1 2 5公厘 .. . 每一環路有3圈，共有兩層時 霄感（1千赫時）：3.8微亨利 電姐：1 . 7 8歐姆 侷向蚤敏度： 中心内之直流偏向番敏度：每安培2 . 7 5公厘 交流驅動信號* 1安培之脈衝，上升及下降時間1〇〇 驪秒 所造成之中心内之交流偏向番敏度：每安培0.73公厘 (請先閲讀背面之注意事項再填寫本頁.)The Ministry of Economic Affairs Central Bureau of Standards and Staff Employee Consumer Cooperatives printed a bromine ring on each side. The performance of the SV Μ coil system was evaluated under the following conditions: Tubular 27V 'electron gun PI 8 8, CI] Τ Υ Μ Ultra-high pressure 30,000 volts Neck diameter 2 9 mm Deviated to the yoke obstacle 3 mm (from the base To the back of the yoke yoke 8 7 mm) 84 mm from the base to the front edge of the SVM coil The SVM coil system has the following specifications: Forbidden width: 0.8 mm conductor spacing: 0.5 mm box conductor thickness: 8 Thickness of the bearing to 10 kilometers: 0. 1 2 5 mm ... Each ring has 3 circles, and there are two layers of time (1 kHz): 3.8 micro-Henry electric sister: 1.7 8 ohm board Flea sensitivity: DC bias sensitivity in the center: 2.7 5 mm AC drive signal per ampere * 1 amp pulse, rise and fall time of 100 liter seconds caused by AC bias in the center Degree: 0.73mm per ampere (Please read the notes on the back before filling this page.)
II 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐）II This paper scale is applicable to China National Standard (CNS) Α4 specification (210Χ297mm)