312645 2TWf.D0 C7ionalhan/002 Λ7 B7 經濟部中央標準局員工消費合作枉印製 五、發明説明（I ) 本發明是有關於一種金屬化學機械硏磨法 (Chemical-Mechanical Pol ishing ; CMP)平坦化技術，特 別是有關於一種利用兩個液泵（Pump )、兩桶硏磨液 (SUrry )來達成兩階段（Two step )之溫度、酸鹼度 (PH )及氧化劑（oxidizer )等製程技術。 在半導體製程技術中，表面平坦化是處理高密度微影 的一項重要技術，因沒有高低落差的平坦表面才能避免曝 光散射，而達成精密的導線圖案轉移（P a 11 e r η Transfer )。平坦化技術主要有旋塗式玻璃法（Spm-On Glass ; S0G)與化學機械硏磨法（CMP)等二種；但在半導體 製程技術進入毫微米（Sub-Half-Mi cron)之後，旋塗式玻 璃法已無法滿足所需求的平坦度，所以CMP技術是現在唯 一能提供超大型積體電路（Very-Large Semiconductor Integration;VLSI)，甚至極大型積體電路（Ultra-Large Semiconductor Integration ; ULSI)製程，“全面性平坦 化（Global Planar izat ion)”的一種技術。CMP技術來自於 IBM公司，已成功地應用在IBM微電子部門所開發的諸多 產品上。因爲CMP技術極可能是將來半導體業者唯一必須 仰賴的平坦化製程，所以目前各半導體相關之工廠與硏究 機構’大多全力的開發CMP技術，以便維持往後競爭優勢。 關於習知CMP平坦化製程技術，請同時參照第1A與1B 圖’圖1A與1B分別繪示一種習知CMP平坦化製程裝置的 俯視與側視圖。其中CMP裝置包括：一硏磨台i〇(p〇ilshing Table);—握柄ll(Holder) ’用以抓住被硏磨的晶片12 ; 3 本紙張尺度適用中國國家標率（CNS ) Λ4規格（2丨0>< 297公筇） (請先閱讀背面之注意事項再填寫本頁) 訂 3126 祁 4 2 2 Γ W f. D 0 C / J 〇 n a t h a η / 0 0 2 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（> ) 一硏磨墊13(P〇1 ishing Pad)，舖在硏磨台10上；一管件 (Tube )丨4，用以輸送硏磨液19到硏磨墊13上；以及 一液泵15，用以將硏磨液19抽送到管件14中。當CMP進 行時，硏磨台10與握柄11分別沿一定的方向旋轉，如圖 中之箭號18a與18b所示，且握柄11抓住晶片12的背面 16，將晶片Π的正面17壓在硏磨墊13上。管件14係將 液泵15所打進來的硏磨液19，持續不斷地供應到硏磨墊 Π上。所以，CMP程序就是利用硏磨液19中的化學助劑， 在晶片12的正面17上產生化學反應，使之形成一易硏磨 層，再配合晶片12在硏磨墊13上藉由硏磨液19中之硏磨 粒（AbrasiveParticles )輔助之機械硏磨，將易硏磨層 之凸出部份硏除；反覆上述化學反應與機械硏磨，即可形 成平坦的表面。基本上，CMP技術是利用機械硏磨的原 理，配合適當的化學助劑（Reagent)與硏磨粒，將表面高 低起伏不一的輪廓，一併加以“磨平”的平坦化技術；若各 製程參數控制得宜，CMP法可以提供被硏磨表面高達94% 以上的平坦度。 在上述CMP平坦化技術中，硏磨液是一重要關鍵之 一，因爲硏磨液中之化學助劑決定化學反應，而硏磨粒 (Abrasive Particles )則決定硏除狀況。不同材料的 CMP程序，使用不同的硏磨液，而硏磨液溫度的高低，直 接影響到CMP平坦化製程的移除率（Removal Rate );因 此，硏磨液之溫度爲CMP製程之一重要參數。此外，硏磨 液的酸鹼度PH値亦是CMP製程之一重要參數，因爲硏磨液 4 (請先閱讀背面之注意事項再填寫本頁)312645 2TWf.D0 C7ionalhan / 002 Λ7 B7 Employee consumption cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs. Fifth, the description of the invention (I) The present invention relates to a metal-chemical mechanical polishing method (Chemical-Mechanical Pol ishing; CMP) flattening Technology, in particular, a process technology that uses two liquid pumps (Pump) and two barrels of grinding fluid (SUrry) to achieve two-step temperature, acidity and alkalinity (PH), and oxidizer. In semiconductor process technology, surface planarization is an important technique for processing high-density lithography. Because there is no flat surface with high or low drop to avoid exposure and scattering, precise wire pattern transfer (P a 11 e r η Transfer) can be achieved. The planarization technology mainly includes spin-on glass method (Spm-On Glass; S0G) and chemical mechanical polishing method (CMP), etc .; but after the semiconductor process technology enters the nanometer (Sub-Half-Mi cron), spin The coated glass method can no longer meet the required flatness, so CMP technology is now the only one that can provide very large integrated circuits (Very-Large Semiconductor Integration; VLSI), and even very large integrated circuits (Ultra-Large Semiconductor Integration; ULSI ) Process, a technology of "Global Planar izat ion". CMP technology comes from IBM and has been successfully applied to many products developed by IBM Microelectronics. Because CMP technology is likely to be the only planarization process that the semiconductor industry must rely on in the future, most of the semiconductor-related factories and research institutes ’are mostly developing CMP technology in order to maintain future competitive advantages. Regarding the conventional CMP planarization process technology, please refer to FIGS. 1A and 1B at the same time. FIGS. 1A and 1B respectively illustrate the top and side views of a conventional CMP planarization process device. Among them, the CMP device includes: a grinding table i〇 (p〇ilshing Table);-grip ll (Holder) 'to grasp the wafer 12 being ground; 3 the paper scale is applicable to China National Standard Rate (CNS) Λ4 Specifications (2 丨 0 < 297 Gongqi) (please read the precautions on the back before filling in this page) Order 3126 Qi 4 2 2 Γ W f. D 0 C / J 〇natha η / 0 0 2 A7 B7 Economy Printed by the Employees ’Consumer Cooperative of the Central Bureau of Standards of the Ministry V. Invention description (>) A grinding pad 13 (P〇1 ishing Pad), paved on the grinding table 10; a tube (Tube) 丨 4, used to transport the grinding The grinding fluid 19 is applied to the grinding pad 13; and a liquid pump 15 is used to pump the grinding fluid 19 into the pipe member 14. When the CMP is performed, the grinding table 10 and the grip 11 rotate in a certain direction, as shown by arrows 18a and 18b in the figure, and the grip 11 grasps the back surface 16 of the wafer 12, and the front surface 17 of the wafer Π Press on the grinding pad 13. The pipe 14 continuously supplies the grinding fluid 19 driven by the liquid pump 15 to the grinding pad Π. Therefore, the CMP process is to use the chemical additives in the polishing liquid 19 to generate a chemical reaction on the front surface 17 of the wafer 12 to form an easy polishing layer, and then cooperate with the wafer 12 on the polishing pad 13 by polishing The mechanical grinding aided by AbrasiveParticles in Liquid 19 removes the protruding part of the easy grinding layer; by repeating the above chemical reaction and mechanical grinding, a flat surface can be formed. Basically, the CMP technology is a flattening technology that uses the principle of mechanical grinding, with appropriate chemical additives (Reagent) and abrasive grains, to "smooth" the uneven contours of the surface; if each The process parameters are properly controlled, and the CMP method can provide a flatness of up to 94% of the surface to be abraded. In the above CMP planarization technology, the grinding fluid is an important key, because the chemical additives in the grinding fluid determine the chemical reaction, and the grinding particles (Abrasive Particles) determine the removal status. Different CMP procedures for different materials use different grinding fluids, and the temperature of the grinding fluid directly affects the removal rate of the CMP planarization process (Removal Rate); therefore, the temperature of the grinding fluid is one of the important CMP processes parameter. In addition, the PH value of the grinding fluid is also an important parameter of the CMP process, because the grinding fluid 4 (please read the notes on the back before filling this page)
本紙張尺度適用中國國家橾準（CNS ) A4規格（210X 297公釐） 312645 22TWf.D〇C/j〇nathan/002 A7 B7 經濟部中央標攀局員工消費合作社印製 五、發明説明（多） 中之化學助劑決定了化學反應，而化學反應又與酸鹼度PH 値有密切關係。通常對金屬硏磨液而言，其硏磨粒主要由 鋁氧粉（Ai2〇3)所形成，而在實際應用上，由於金屬硏磨液 含有氧化劑（Oxidizer )'，所以氧化劑的濃度 (Concent rat ion )亦是CMP製程之一重要參數。金屬硏 磨之CMP程序須面臨硏磨粒容易沉澱的問題，一般使用硏 磨液之前，會以電動攪拌棒將硏磨液筒中的硏磨液攪拌均 勻，再接到CMP裝置開始硏磨。 接著，參照第2A至2C圖，圖2A至2C圖是繪示一種 習知金屬插塞中間凹進（Plug Recessed )之CMP平坦化 製程的側視圖。圖中僅就根本發明有關製程加以簡介，其 他與本發明無關部份，在此不再贅敘。首先請參照第2A 圖，第一金屬層21之上，沉積一層介電材質22，通常此 層介電材質22爲二氧化矽（Si〇2 )，經過微影蝕刻製程 後，如圖2A所示；接著沉積一層第二金屬層23，例如金 屬鎢（Tungsten )或鋁（A1 )或銅（Cu )，如圖2B所 示；接著進行金屬化學機械硏磨，將金屬層23磨平；理想 上是將金屬鎢磨平至二氧化矽介電層爲止，但由於硏磨墊 具有彈性及硏磨液化學戟刻（Chemical Etching )等製程 技術因素，導至金屬插塞中間凹進現象，即金屬鎢中間呈 現碟形狀（Duhmg )凹形現象，如圖2C箭頭24所指示。 有鑑於此，本發明的主要目的就是在提供一種金屬平 坦化技術，解決金屬插塞中間凹進現象，改善金屬鎢中間 呈現碟形狀凹形效應。 (請先閱讀背面之注意事項再填寫本頁) • m ♦ 5m* „ ·- ---h---!--^------訂--- £ 度適用中國國家橾準（CNS ) Λ4規格（2丨〇'乂 297公釐） 312645 TWf.DOC/Jonathan/002 八7 B7 五 經濟部中央標隼局員工消費合作社印裝 發明説明（y) 根據本發明之上述目的’提出一種金屬平坦化技術； 該技術包括利用兩個液泵、兩桶硏磨液來達成兩階段之溫 度、酸鹼度PH及氧化劑等製程技術。 根據本發明之一較佳實施例，提出一種金屬平坦化技 術；該技術係利用一加熱器（Heater )、一保溫棉、兩個 液泵、兩桶硏磨液來達成兩階段之溫度製程技術。 根據本發明之另一較佳實施例，提出一種金屬平坦化 技術；該技術係利用兩個液泵、兩桶硏磨液來達成兩階段 之PH製程技術；並將強調第一階段爲腐蝕（Corrosi〇n ) 區域，而第二階段爲保護（Passivation )區域。 根據本發明之又一較佳實施例，提出一種金屬平坦化 技術；該技術係利用兩個液泵、兩桶硏磨液來達成兩階段 之氧化劑製程技術；其中強調第一階段爲較佳氧化劑濃度 (Optimum Oxidizer Concen’tration )，而第二階段爲較 高氧化劑濃度（Higher Oxidizer Concentration )。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一些較佳實施例，並配合所附圖式，作 詳細說明如下： 圖式之簡單說明： 第1A-1B圖分別繪示一種習知化學機械硏磨平坦化製 程裝置的俯視與側視圖； 第2A-2C圖是繪示一種習知金屬插塞中間凹進之CMP 平坦化製程的側視圖； 第3圖係依照本發明之第一較佳實施例，一種利用兩 6 (請先閱讀背面之注意事項再填寫本頁) U ..丁 i i ¢.*1—IM u^i f^i— nn vm I'J —-、vs n Hal ^JK i 丨^! 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐〉 31264¾ 2TWf.DQC/Jonaihan/002 A7 B7 經濟部中央橾準局員工消費合作社印製 五、發明説明（Γ) 桶硏磨液及兩個液泵來達成兩階段之溫度製程技術配置 示意圖； 第4圖係依照本發明之第二實施例，一種PH値之製程 技術示意圖； 第5圖是繪示一種習知金屬CMP平坦化製程的反應機 製； 第6圖係依照本發明之第三實施例，一種氧化劑製程 技術之示意圖。 第一實施例 本較佳實施例，係利用一加熱器、一保溫棉、兩個液 泵、雨桶硏磨液來達成兩階段之溫度製程技術。首先，請 參照第3圖，其係依照本發明第一較佳實施例之溫度製程 技術，圖3中第一硏磨液31，裝設有一加熱攪拌器（未劃 出），用以加熱該第一硏磨液31，藉由管件32連接到第 一液泵33，此第一液泵33用以將第一硏磨液31抽送到管 件32中’而管件32將第一硏磨液31直接注入到硏摩墊34 上；此第一硏磨液31爲一完整硏磨劑，本發明是以一加熱 攪拌器（未劃出）加熱第一硏磨液31，使其溫度較高，化 學反應速率較快，移除率較快，並以電腦自動化控制狀態 (Phase ) 1,2,3，使其硏磨時間佔全部硏磨時間的60% 以上’是謂第一階段（FirstStep )。圖3中第二硏磨液 35 ’裝設有一加熱攪拌器（未劃出），用以加熱該第二硏 磨液’藉由管件36連接到第二液泵37，此第二液泵37用 以將第二硏磨液3.5抽送到管件36中，而管件36將第二硏 7 I,---rlt—Λ T- (請先閱讀背面之注意事項再填寫本頁)This paper scale is applicable to China National Standard (CNS) A4 specification (210X 297mm) 312645 22TWf.D〇C / j〇nathan / 002 A7 B7 Printed by the Ministry of Economy Central Standardization Bureau employee consumer cooperative. The chemical additives in) determine the chemical reaction, and the chemical reaction is closely related to the pH value. Generally for metal grinding fluids, the grinding grains are mainly formed by aluminum oxide powder (Ai203). In practical applications, since the metal grinding fluid contains an oxidizer (Oxidizer), the concentration of oxidizer (Concent rat ion) is also an important parameter of the CMP process. The CMP process of metal grinding must face the problem of easy precipitation of grinding particles. Generally, before using the grinding liquid, the grinding liquid in the grinding liquid cylinder will be evenly stirred with an electric stirring rod, and then it is connected to the CMP device to start grinding. Next, referring to FIGS. 2A to 2C, FIGS. 2A to 2C are side views illustrating a conventional CMP planarization process for recessing (Plug Recessed) in a metal plug. The figure only introduces the manufacturing process of the fundamental invention, and other parts not related to the present invention will not be repeated here. First, please refer to FIG. 2A, a layer of dielectric material 22 is deposited on the first metal layer 21, usually this layer of dielectric material 22 is silicon dioxide (Si〇2), after the lithography etching process, as shown in FIG. 2A Then, a second metal layer 23 is deposited, such as metal tungsten (Tungsten) or aluminum (A1) or copper (Cu), as shown in FIG. 2B; then metal chemical mechanical grinding is performed to smooth the metal layer 23; ideal The above is to grind the metal tungsten to the silicon dioxide dielectric layer, but due to the elasticity of the polishing pad and the chemical technology of the polishing liquid (Chemical Etching), it leads to the phenomenon of recession in the middle of the metal plug, that is The tungsten metal has a concave shape (Duhmg) in the middle, as indicated by arrow 24 in FIG. 2C. In view of this, the main purpose of the present invention is to provide a metal flattening technology to solve the phenomenon of recessing in the middle of the metal plug and to improve the dish-shaped concave effect in the middle of the metal tungsten. (Please read the precautions on the back before filling in this page) • m ♦ 5m * „·---- h ---!-^ ------ book --- £ degrees apply to Chinese national standards ( CNS) Λ4 specification (2 丨 〇 '297 mm) 312645 TWf.DOC / Jonathan / 002 8 7 B7 Fifth Ministry of Economy Central Standard Falcon Bureau Employee Consumer Cooperative Printed Invention Instructions (y) According to the above purpose of the present invention A metal flattening technology; the technology includes two liquid pumps and two barrels of grinding fluid to achieve two-stage temperature, pH and oxidant process technology. According to a preferred embodiment of the present invention, a metal flattening technology is proposed Technology; this technology uses a heater (Heater), a thermal insulation cotton, two liquid pumps, two barrels of grinding fluid to achieve a two-stage temperature process technology. According to another preferred embodiment of the present invention, a metal Flattening technology; this technology uses two liquid pumps and two barrels of grinding fluid to achieve a two-stage PH process technology; it will emphasize that the first stage is the corrosion (Corrosion) area, and the second stage is protection (Passivation) ) Area. According to yet another preferred embodiment of the present invention , Proposed a metal planarization technology; this technology uses two liquid pumps and two barrels of grinding fluid to achieve a two-stage oxidant process technology; which emphasizes that the first stage is a better oxidant concentration (Optimum Oxidizer Concen'tration), and The second stage is a higher oxidant concentration (Higher Oxidizer Concentration). In order to make the above and other objects, features, and advantages of the present invention more obvious and understandable, some preferred embodiments are described below in conjunction with the accompanying drawings, The detailed descriptions are as follows: Brief description of the drawings: Figures 1A-1B respectively illustrate the top and side views of a conventional chemical mechanical grinding flattening process device; Figures 2A-2C illustrate a conventional metal plug Side view of the CMP flattening process with a recess in the middle; Figure 3 is the first preferred embodiment according to the present invention, a kind of using two 6 (please read the precautions on the back before filling this page) U .. 丁 ii ¢ . * 1—IM u ^ if ^ i— nn vm I'J —-, vs n Hal ^ JK i 丨 ^! This paper size is applicable to China National Standard (CNS) A4 specification (210X297mm> 31264¾ 2TWf.DQC / Jonaihan / 002 A7 B7 Economy Printed by the Central Consumer Service Cooperative Staff V. Invention Description (Γ) A schematic diagram of the technical configuration of the barrel grinding fluid and two liquid pumps to achieve a two-stage temperature process; Figure 4 is a second embodiment according to the invention, a The schematic diagram of the process technology of PH value; FIG. 5 is a reaction mechanism of a conventional metal CMP planarization process; FIG. 6 is a schematic diagram of an oxidizer process technology according to the third embodiment of the present invention. First Embodiment The preferred embodiment uses a heater, a thermal insulation cotton, two liquid pumps, and a rain barrel grinding fluid to achieve a two-stage temperature process technology. First, please refer to FIG. 3, which is a temperature process technology according to the first preferred embodiment of the present invention. The first grinding fluid 31 in FIG. 3 is equipped with a heating agitator (not shown) to heat the The first grinding fluid 31 is connected to the first liquid pump 33 through the pipe 32. The first liquid pump 33 is used to pump the first grinding fluid 31 into the pipe 32 'and the pipe 32 carries the first grinding fluid 31 It is directly injected onto the friction pad 34; this first grinding liquid 31 is a complete grinding agent, and the present invention heats the first grinding liquid 31 with a heating stirrer (not shown) to make its temperature higher, The chemical reaction rate is faster, the removal rate is faster, and the state of computer automation control (Phase) 1,2,3, so that the grinding time accounts for more than 60% of the total grinding time 'is the first step (FirstStep) . In FIG. 3, the second grinding fluid 35 is provided with a heating agitator (not shown) for heating the second grinding fluid. The second fluid pump 37 is connected to the second fluid pump 37 through a pipe 36. Used to pump the second grinding fluid 3.5 to the pipe fitting 36, and the pipe fitting 36 will pump the second grinding fluid 7 I, --- rlt--Λ T- (please read the precautions on the back before filling this page)
、1T A! 本紙張尺度適用中國國家;^準（CNS ) A4規格（2〖〇X297公釐） 1 4 2 2 Γ W Γ. D 0 C / J ο n a t h a η / Ο Ο 2 Λ7 B7 _ 五、發明説明（έ ) 磨液3 5直接注入到硏磨墊3 4上；此第二硏磨液3 5爲一完 整硏磨劑，溫度較低，可以降低化學效應，因此可以改善 插塞中間凹進現象，並以電腦自動化控制狀態（Phase ) 4,5,6，該硏磨時間佔全部硏磨時間的40%以下，是謂第二 階段（Second Step )。由於金屬硏磨液的硏磨粒非常容 易沉澱，因此大多數商用硏磨液均未含氧化劑，待使用時 再將商用硏磨液和氧化劑依一定比例混合在玻璃容器 內，成爲一完整硏磨劑。 上述第一較佳實施例中，以兩桶硏磨液及兩個液泵來 達成兩階段之溫度製程方法，是以一加熱攪拌器分別加熱 第一硏磨液31及第二硏磨液35,其溫控誤差可小於rc， 不須改變CMP機台硬體設備，故成本低；而第一硏磨液3} 及第二硏磨液35均爲完整硏磨劑，不須相互混合，即可直 接注入到硏磨墊34上。又傳送硏磨液之管件可包一保溫棉 (未劃出），以防熱能散失掉。 第二實施例 本發明之另一較佳實施例，提出一種金屬平坦化技 術；該技術係利用兩個液泵、雨桶硏磨液來達成兩階段之 PH製程技術；並將強調第一階段爲腐鈾區域，而第二階段 爲保護區域。請同時參照第3圖與第4圖，第4圖其顯示 的是在金屬鋁化學機械硏磨中，PH效應與移除率之關係 圖’橫軸是PH値’縱軸代表移除率（A/min )，金屬鋁並 摻雜1%矽及0_5%銅；圖中第一階段41其硏磨液pH値較 小，酸性較強，化學反應速率較快，移除率較快，趨向腐 8 本紙張尺度適用中國國家標準（CNS ) Α4ϋΓ[7Γ^97公楚） (讀先閱讀背面之注意事項再填寫本頁) t * >k，4 丨 訂 經濟部中央標準局員工消費合作社印製 312645 22TWf.DOC/Jonaihan/002 A7 B7 經濟部中央標隼局員工消費合作社印— 五、發明説明（q ) 蝕區域；而第二階段42其硏磨液PH値較大，酸性較弱’ 化學反應速率較慢，移除率亦較慢，趨向保護作用區域。 上述第二較佳實施例中，以兩桶硏磨液及兩個液泵來達成 兩階段之PH製程方法，可以有效改善金屬插塞中間凹進現 象，即金屬中間呈現碟形狀凹形現象；而且在CMP製程中 其移除率先快後慢。 第三實施例 . 根據本發明之又一較佳實施例，提出一種金屬平坦化 技術；該技術係利用兩個液泵、兩桶硏磨液來達成兩階段 之氧化劑製程技術；其中強調第一階段爲較佳氧化劑濃 度，其中最大移除率在B點；而第二階段爲較高氧化劑濃 度。請同時參照第3圖與第5A-5D圖及第6圖；第5A-5D 圖其顯示一種習知金屬CMP平坦化製程的反應機製’在金 屬硏磨液中含氧化劑，此氧化劑主要功用是將金屬表面 (surface )氧化成保護薄膜（PassivatingFilm )，再 經機械作用（Mechanical Act ion )將此保護薄膜硏磨掉。 第5A圖中，絕緣層51上沉積一層金屬層52，這裡的金屬 可以爲鎢或鋁或銅，或是金屬鋁摻雜矽及銅，此層金屬層 52表面被氧化劑氧化成一保護薄膜53，首先是經由機械 作用，將較高部份之保護薄膜硏磨掉，如第5B圖所示；由 於在被硏磨掉的金屬層上面部份沒有保護薄膜’金屬表面 將被化學鈾刻，並且將再被氧化劑氧化成一保護薄膜’如 第5C圖所示。重復上述之平坦化製程，最後將得到如第 5D圖所示之平面。最後，請參照第6圖’圖6係依照本發 9 ί---^----Γκν—— (請先閱讀背面之注意事項再填寫本頁) 、π £|_ 本紙張尺度適用中國國家標準（CNS ) Α4規格（2丨0'乂297公嫠） 1 4 2 2 丨 Vv {『）o c / J ο n a t h a η Λ) Ο 2 A7 B7 經濟部中央標準局員工消費合作社印裝 五、發明説明（§ ) 明之第三實施例，其顯示的是在金屬鋁化學機械硏磨中， 一種氧化劑製程技術之關係圖，橫軸是氧化劑（H2〇2)濃 度百分比率，縱軸代表移除率（A/min )，金屬鋁並摻雜 1%矽及0.5%銅；圖中A點至B點爲第一階段，此第一階段 含蓋B點，在B點之前，其氧化速率（Ondation Rate ) 小於機械硏磨速率；而B點其氧化速率等於機械硏磨速 率，爲最大移除率之最佳氧化劑濃度，此B點爲兩階段氧 化劑製程技術之分界點；而B點至C點表示第二階段，此 第二階段爲較高氧化劑濃度，其氧化速率大於機械硏磨速 率；在B點之後，即第二階段製程中，可降低化學蝕刻機 率，意即減低化學反應速率。 上述第三較佳實施例中，以兩桶硏磨液及兩個液泵來 達成兩階段之氧化劑製程方法，可以有效改善金屬插塞中 間凹進現象，即金屬中間呈現碟形狀凹形現象。 在上述第一、第二及第三實施例中，第一硏磨液31 及第二硏磨液35均爲完整硏磨劑，不須相互混合即可直接 注入到硏磨墊34上，因此不須考慮在化學機械硏磨過程中 混合液的PH値是否均勻或穩定。 綜合上述實施例可知，本發明僅利用簡單的兩桶硏磨 液及兩個液泵來達成兩階段之製程方法，便可以獲得許多 優點，諸如成本低、製程簡單、賦予CMP製程多元化的選 擇。而本發明所提出任一兩階段製程，在第一階段之製程 皆是在提高化學效應，以提高移除率，增加生產量 (Throughput );而第二階段之製程皆是在降低化學效 本纸張尺度適用中國國家標準（CNS ) Λ4規格（2丨0X297公釐） (請先閱讀背而之注意事項再填寫本頁)、 1T A! This paper scale is suitable for China; ^ quasi (CNS) A4 specification (2 〖〇X297mm) 1 4 2 2 Γ W Γ. D 0 C / J ο natha η / Ο Ο 2 Λ7 B7 _ 5 2. Description of the invention (έ) The grinding fluid 35 is directly injected onto the grinding pad 3 4; this second grinding fluid 35 is a complete grinding agent, the temperature is lower, it can reduce the chemical effect, so it can improve the middle of the plug The recessed phenomenon is controlled by computer automation (Phase) 4,5,6. The grinding time accounts for less than 40% of the total grinding time, which is called the second step (Second Step). Since the abrasive grains of the metal grinding fluid are very easy to precipitate, most commercial grinding fluids do not contain oxidizing agents. When used, the commercial grinding fluid and the oxidizing agent are mixed in a glass container at a certain ratio to become a complete grinding. Agent. In the above first preferred embodiment, two barrels of grinding liquid and two liquid pumps are used to achieve a two-stage temperature process method, which is to heat the first grinding liquid 31 and the second grinding liquid 35 with a heating stirrer, respectively. , The temperature control error can be less than rc, without changing the CMP machine hardware equipment, so the cost is low; and the first grinding fluid 3} and the second grinding fluid 35 are complete grinding agent, do not need to be mixed with each other, That is, it can be directly injected onto the grinding pad 34. The pipe fittings that transport the grinding fluid can be wrapped with a thermal insulation cotton (not shown) to prevent the heat energy from being lost. Second Embodiment Another preferred embodiment of the present invention proposes a metal planarization technology; this technology uses two liquid pumps and rain bucket grinding liquid to achieve a two-stage PH process technology; the first stage will be emphasized It is a decayed uranium area, and the second phase is a protected area. Please refer to Figures 3 and 4 at the same time. Figure 4 shows the relationship between the PH effect and the removal rate in the metal aluminum chemical mechanical grinding. The horizontal axis is the PH value and the vertical axis represents the removal rate ( A / min), metal aluminum doped with 1% silicon and 0_5% copper; in the first stage 41 of the figure, the pH value of the grinding liquid is smaller, the acidity is stronger, the chemical reaction rate is faster, the removal rate is faster, and the trend is Corruption 8 This paper scale is applicable to the Chinese National Standard (CNS) Α4ϋΓ [7Γ ^ 97 Gongchu) (read the precautions on the back and then fill out this page) t * > k, 4 Printed 312645 22TWf.DOC / Jonaihan / 002 A7 B7 Printed by Employee Consumer Cooperative of the Central Standard Falconry Bureau of the Ministry of Economic Affairs-V. Description of Invention (q) Eroded area; and the PH value of the grinding fluid in the second stage 42 is larger and the acidity is weak 'The chemical reaction rate is slow and the removal rate is also slow, tending to protect the area. In the above-mentioned second preferred embodiment, two barrels of grinding fluid and two liquid pumps are used to achieve a two-stage PH process method, which can effectively improve the recessed phenomenon in the middle of the metal plug, that is, the dish shape is concave in the middle of the metal; Moreover, in the CMP process, the removal rate is fast and then slow. Third embodiment. According to another preferred embodiment of the present invention, a metal planarization technology is proposed; this technology uses two liquid pumps and two barrels of grinding fluid to achieve a two-stage oxidant process technology; which emphasizes the first The stage is a better oxidant concentration, where the maximum removal rate is at point B; and the second stage is a higher oxidant concentration. Please refer to Figure 3, Figures 5A-5D and Figure 6 at the same time; Figures 5A-5D show the reaction mechanism of a conventional metal CMP planarization process. The metal oxidizer contains an oxidant. The main function of this oxidant is The metal surface (surface) is oxidized into a protective film (Passivating Film), and then the protective film is polished off by mechanical action (Mechanical Act ion). In FIG. 5A, a metal layer 52 is deposited on the insulating layer 51. The metal here may be tungsten, aluminum, or copper, or metal aluminum-doped silicon and copper. The surface of this metal layer 52 is oxidized by an oxidant to form a protective film 53, First of all, by mechanical action, the higher part of the protective film is polished off, as shown in Figure 5B; because there is no protective film on the metal layer that has been polished away, the metal surface will be engraved by chemical uranium, and It will be oxidized to a protective film by the oxidant as shown in Figure 5C. Repeat the above planarization process, and finally you will get the plane shown in Figure 5D. Finally, please refer to Figure 6 'Figure 6 is in accordance with this issue 9 ί --- ^ ---- Γκν—— (Please read the precautions on the back before filling out this page), π £ | _ This paper size applies to China National Standard (CNS) Α4 specifications (2 丨 0 '297 gong) 1 4 2 2 丨 Vv {『) oc / J ο natha η Λ) Ο 2 A7 B7 Printed and printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs Description of the invention (§) The third embodiment of the invention, which shows a relationship diagram of an oxidant process technology in metal aluminum chemical mechanical grinding, the horizontal axis is the percentage ratio of oxidant (H2〇2) concentration, and the vertical axis represents removal Rate (A / min), aluminum metal doped with 1% silicon and 0.5% copper; point A to point B in the figure is the first stage, this first stage covers point B, and the oxidation rate before point B ( Ondation Rate) is less than the mechanical grinding rate; and the oxidation rate at point B is equal to the mechanical grinding rate, which is the optimal oxidant concentration for the maximum removal rate. This point B is the demarcation point of the two-stage oxidant process technology; The point indicates the second stage, which is a higher oxidant concentration, and its oxidation rate is greater than that of mechanical grinding Rate; After point B, i.e. the second stage of the manufacturing process, reduce the rate of chemical etching machine, which means reducing the chemical reaction rate. In the above third preferred embodiment, two barrels of grinding fluid and two liquid pumps are used to achieve a two-stage oxidant process, which can effectively improve the concave phenomenon in the middle of the metal plug, that is, the dish shape concave phenomenon in the middle of the metal. In the above-mentioned first, second and third embodiments, the first grinding liquid 31 and the second grinding liquid 35 are all complete grinding agents and can be directly injected onto the grinding pad 34 without mixing with each other. It is not necessary to consider whether the pH value of the mixed solution is uniform or stable during the chemical mechanical grinding process. Based on the above embodiments, it can be seen that the present invention only uses a simple two-barrel grinding liquid and two liquid pumps to achieve a two-stage process method, and can obtain many advantages, such as low cost, simple process, and multiple choices for CMP . In any two-stage process proposed by the present invention, the first-stage process is to increase the chemical effect to increase the removal rate and increase the throughput (Throughput); and the second-stage process is to reduce the chemical cost The paper standard is applicable to the Chinese National Standard (CNS) Λ4 specification (2 丨 0X297mm) (please read the precautions before filling this page)
2TWf.DOC/Jonathan/002 A7 B7 五、發明説明（1 ) 應，以有效改善金屬插塞中間凹進現象，即金屬中間呈現 碟形狀凹形現象。 雖然本發明已以一些較佳實施例揭露如上，然其並非 用以限定本發明，任何熟習此技藝者，在不脫離本發明之 精神和範圍內，當可作些許之更動與潤飾，因此本發明之 保護範圍當視後附之申請專利範圍所界定者爲準。 -------·'----„—Γ i衣— (請先閱讀背面之注意事項再填寫本頁) 經濟部中央樣隼局員工消費合作社印製 適 Λ1 尺 張 紙 本 一準 一榡 一家 格 規 公2TWf.DOC / Jonathan / 002 A7 B7 5. Description of the invention (1) It should effectively improve the concave phenomenon in the middle of the metal plug, that is, the dish shape concave phenomenon in the middle of the metal. Although the present invention has been disclosed as above with some preferred embodiments, it is not intended to limit the present invention. Anyone who is familiar with this skill can make some changes and retouching without departing from the spirit and scope of the present invention. The scope of protection of an invention shall be deemed as defined by the scope of the attached patent application. ------- · '---- „— Γ i 衣 — (please read the precautions on the back before filling in this page) Printed a suitable Λ1 foot sheet of paper by the Central Sample Falcon Bureau Consumer Cooperative of the Ministry of Economic Affairs A quasi-one family company