TW308709B - Electron-beam processed films for microelectronics structures - Google Patents

Abstract

An improved method for producing substrates coated with dielectric films for use in microelectronic applications in which the films are processed by exposing the coated substrate surfaces to a flux of electron beam. Substrates cured via electron beam exposure possess superior dielectric properties, density, uniformity, thermal stability, and oxygen stability.

Description

A7 'B7 30S709 Five' Description of the Invention (This application declares the benefits of the US provisional case number 60 / 000,239 of the application filed on June 15, i995. The ten thousand types are incorporated in this article. 'The field of the art, the present invention relates to electron beam processing films used in microelectronic structures such as integrated circuits (integmed eimh, IC for short). More specifically, the present invention relates to processing The improvement of the method of this kind of film, the improvement is made: both :, dense film 'Some films also have low dielectric constant and low wet etching rate: 2. Background of the invention such as multi-chip modules, printed circuits Boards, high-speed logic devices, flat display devices, #body circuits and other microelectronic devices need to be deposited or spin-coated with dielectric films. Printed by the Consumer Cooperative of the Central Prototype Bureau of the Ministry of Economic Affairs-r > u .wmo W Yang, Li Zhonglu Electronics Microstructure Department, Ga. f. every about 1 984) [Josica];% A commonly used technology that produces such a required film onto a substrate involves 350X: and 90 (temperature range between TC, hold About 1 hour of thermal annealing or thermal hardening. See "Signal Rotation / 'Baking' Hardening Procedure" (1994 for the application of dielectric coating for interlayer and intermetal dielectric flattening on glass) (1994) ) (Thermosetting hard-coated film) and Kern, W., " Deposited Dielectrics for Very Large Integrated Circuits ", 8 (7) International Semiconductor 122 (July 1985) [" Ken, ']; Gorczyca, TB ·, et al.' Plasma-assisted chemical vapor deposition of dielectrics "8M) Very large

A7 'B7 3〇87〇9 V. Description of the invention (2) Mattson, B., " Chemical Vapor Deposition Films of Interlayer Dielectrics " Solid State Technology 60 (January 1980) [Mei Ti Mori] (Thermal Annealed Chemical Vapor Deposition (CVD) Film) a However, several shortcomings are related to heat treatment. In applications where spin-on glass film (hereinafter referred to as SOG) is spin-coated onto a substrate, the silicone-type SOGs are susceptible to damage by oxygen electropolymerization. In the subsequent IC treatment, s〇Gs, which have been damaged by oxygen plasma, have a tendency to expose moisture, often causing electrical and mechanical reliability failure. 3 In addition, the hardened S Ο G s is unstable to the emulsion polymerization Not only causes manufacturing difficulties such as peeling, but also causes physical, mechanical, and appearance defects in the final product such as increased porosity, increased shrinkage, and poor flatness = secondly, this hardening The high temperature use of acid salt s 0 G s also causes the oxidation and deterioration of silicide. This often leads to device failure caused by the deterioration of silicide or the profile distribution of shallow dopants in advanced IC. Furthermore, the presence of this oxidized surface layer adversely affects the overall electrical performance of the IC by increasing resistance or removing electrical contacts to the silicide, and by deteriorating interconnections between transistors. Printed by the Ministry of Economic Affairs, Central Bureau of Precincts, consumer cooperation. In applications where the substrate is coated with a CVD film, an additional annealing step at a high temperature of up to about 1000 c is also required to improve the quality of the c vd film. However, this causes complexity such as silicide degradation, heat carrier degradation, device instability, and device failure issues3. Although these difficulties are similar to those observed using heat treatment, the magnitude of these effects is larger because The temperatures involved are much higher. The ultra-thin gate oxides and nitrides grown on the substrate are one-of-a-kind, and the extension is applicable to the Chinese national rate specification (plus 297 public directors) 308709 A7 ______ B7 5. Description of the invention (3) The known problem is There is no ability to control the uniformity of their growth. Prior art methods to grow such oxides use single crystal rapid thermal processing systems (Rapid Thermal Processing systems, hereinafter referred to as RTP) or as in, for example, Sheets, R., "Microelectronics manufacturing and testing of rapid thermal processing systems , The furnace described in j 6 (July 1985). However, even if the pollutants are present in a quantity as low as a few parts per billion, the growth failure will occur in these methods. 3 This inability to produce such The uniform oxide 'nitride, during the operation of 丨 C, causes the subsequent burning of the oxide and nitride, and thus affects its overall reliability. For all advanced 1C, with a low current constant Dielectric materials are expected. Generally speaking, CVD films do not possess a low dielectric constant unless they are doped with a high content of fluorine. See Takeshi, S, et al., N2〇- 电 和Annealing stabilizes the dielectric constant of the doped fluorine dioxide oxide film " Dielectrics for VLSI / ULSI multilevel Interconnection Conferen ce, hereinafter referred to as DUMIC) (February 1995). However, this doped fluorine oxide is often unstable, and is easily degraded in a moisture environment and an oxygen plasma environment. Despite the use of rotation Coated polymer-containing films (spin_〇n containing films, hereinafter referred to as S〇Ps) can obtain a lower dielectric constant, but such films due to their poor thermal stability, they are often exposed to oxygen plasma The tendency of deterioration and their typical use in the deposition of metal layers in ICs: the tendency to decompose at temperature, which is a great battle for the integrated oil extraction of the process. Furthermore, the lowest dielectric that the ship has undergone through thermally hardened SOGs The constant is typically only ___ -6- The paper size is suitable for China * Standard l CNTS) A4 specification (210X 29 * 7 public sound) " ----------- ------- --1 ------ iT ------. ^-(Please read the back-notes & fill in this page) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs V. Invention Instructions (4 A7 -B7 Printed garments of the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs about 3.8-4.1. Such dielectric Jun due to mechanical and electrical effects are more stringently controlled Capacitor values, which become more critical as the device size decreases, may not be suitable for the end use of the next generation of microelectronics applications. Provide an improved method for quickly processing dielectric film coatings on substrates at low temperatures, this method Products that are thermally stable and insensitive to oxygen plasmas are expected. It is also expected to provide uniform and dense SOG or CVD materials with low dielectric constants. In addition, it would be desirable to grow an ultra-thin gate oxide uniformly on the substrate. SUMMARY OF THE INVENTION According to the present invention, it provides improvements in the hardening of a dielectric material on a substrate. The improvements include: (a) applying a dielectric material to a surface of the substrate; and (b) sufficient to harden the dielectric material Under conditions, the dielectric material is exposed to electron beam radiation. According to another aspect of the present invention, it provides improvements in the annealing of substrates coated with chemical vapor deposition materials, the improvements including-(a) applying chemical vapor deposition materials to a surface of the substrate; and (b) Under conditions sufficient to anneal the chemical vapor deposition material, the chemical vapor deposition material is exposed to electron beam radiation. According to another aspect of the present invention, JL # / · ^ I provides improvements in the growth of ultra-thin film oxides or nitrides on the substrate. The improvements include: ⑷ in the presence of a gaseous material, and Under a condition sufficient to separate the material into an oxidation or nitridation reaction on the surface of the substrate, a surface of the substrate is exposed to electron beam radiation. -7- The size of this paper is in Chinese --------- t! (Please read the back V and note the text% 'to write this page first)

'I 1 I I-ml. B7 Printed by the Consumer Labor Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (5) According to another aspect of the present invention, it is provided with an electron beam treatment coated according to the above process Membrane substrate. According to another aspect of the invention, there is provided a process for reducing the dielectric constant of a substrate coated with a dielectric film and a chemical vapor deposition film, the process comprising exposing the film to electrons under conditions sufficient to process the film Beam radiation. According to another aspect of the invention, there is provided a process for producing a fragment-rich film from a chemical vapor deposition coating, the process comprising 'exposure of the coating to electron beam radiation under conditions sufficient to treat the film. In another embodiment of the present invention, a microelectronic device containing a substrate coated with an electron beam treatment film is provided, wherein the dielectric constant of the electron beam treatment film is less than about 3. The electron beam treatment film of the present invention not only beneficially forms a dense and uniform coating on the substrate, but also beneficially forms an electron beam hardened S〇g film, which has a much lower composition than that reported by heat treatment at high temperature. The dielectric constant of the person. In addition, the time and temperature for processing such membranes are much reduced. BRIEF DESCRIPTION OF THE DRAWINGS With reference to the following detailed description of the present invention and the accompanying drawings, the present invention will be more fully understood, and more advantages will become apparent, in which: FIG. 1 is coated with silica The graph of Fourier Transform Infrared Spectra (FTIR) absorption of the wafer of alkane SOG absorbs the wavenumber (1 / cm). The crystal element is either hot plate baking, thermal hardening, or electron beam hardening. _ Figure 2 (a) and (b) are used at various electron beam doses and hardening temperatures ------__- 8-This paper scale is applicable to China National Standard (CNS) M specifications (public slow)- ——— 装 装 ———— 訂 ———— 線 · ”(Please read the notes on the back ¾. Know to write this page) Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 3〇87〇 9 • KV B7 — —— V. Description of the invention (6) FTIR spectrum absorption versus wavenumber (1 / cm) graph of electron beam hardened SOG-coated wafers. Figure 3 is a graph of the percentage of film shrinkage versus electron beam dose (microcoulombs / cm 2) of SOG-coated wafers hardened by heating and electron beam irradiation. Figure 4 is a graph of the film shrinkage percentage of electron beam hardened silicone SOG wafers versus electron beam energy (kiloelectron volts). Fig. 5 shows that the wafers coated with thermally hardened SOG, the thermal oxide wafers, and the wafers coated with electron beam hardened SOG are wetted at 50: 1 buffered oxide etch (hereinafter referred to as BOE) The etching rate (Angstroms / sec) is a graph of the electron beam dose (microcubic / cm2). Figures 6 (a)-(d) are graphs of the wet-etching rate (Angstroms / sec) of 50: 1 B. Ο E. wafers coated with electron beam hardened SOG as a function of the depth of the film thickness (Angstroms) . Fig. 7 shows the wet etching rate (Angstroms / sec) of the wafers coated with electron beam hardened SOG in 50 0 _ 1 BOE at various levels of electron beam energy (kiloelectron volts) as the depth of film thickness ( A) The graph of the function. Figure 8 is a graph of FTIR spectral absorption versus wavenumber (1 / cm) of a wafer coated with electron beam hardened SOG after completion of each processing stage. Figure 9 is a graph of FTIR spectral absorption versus wavenumber (丨 / cm) of thermally hardened SOG film and electron beam hardened SOG film both exposed to atmospheric conditions after hardening. Figure 1 (a) and (b) Wafers coated with electron beam hardening S0G are after electron beam hardening 'and after immersion in water followed by electron beam hardening, -9- This paper wave scale is applicable to China National Standard (CNS) A4 specification (210X297mm) I -------- 1 ------ ΪΤ ------ ^ (Please read the precautions on the back as if writing a book) A7_

The Ministry of Economic Affairs Central Bureau of Standards and Labor under the Consumer Cooperative Printed a graph of F Τ I R spectral absorption versus wave number (丨 / cm). Figure 11 Graph of F T I R spectral absorption versus wave number (i / cm) of aging treatment film using electron beam hardening in the presence of various milk bodies. Fig. 12 Cumulative probability of time to breakdown (QBD for short) with electron beam hardening gate oxide of SOG covered with tetraethyi orthosilicate (TEOS for short) ) The graph of the crash time (seconds). Figure 13 is the depth (microns) of the depth profile analysis of the secondary ion mass spectroscopy (hereinafter referred to as SIMS) through the thickness of the oxides of sodium, potassium, hydrogen, carbon, and oxygen impurities. The graph of concentration (atoms / cubic centimeter). DESCRIPTION OF PREFERRED EMBODIMENTS Unless otherwise indicated, all reference numerals in this document indicate weight. As used herein, "quote" should refer to the dose of electron beam radiation. Various materials can be applied to the substrate of the present invention via "spin coating", CVD, or growth techniques. Suitable dielectric materials or SOGs that can be spin coated onto the substrate include silicates, phosphosilicates , Siloxanes, Phosphosiloxanes and mixtures thereof. Siloxanes are preferred. The more preferred silicones are amorphous, cross-linked glass-type materials with the chemical formula SiOx, Where X is greater than or equal to 1 and less than or equal to 2, and has "pre-exposure" inclusions, which are from about 2% to about 90% based on the total weight of the silicone material, and Preferably, the organic group composition is from about 10% to about 25%, such as an alkyl group having from about 1 to about 10 carbons, an aromatic group having from about 4 to about 10 carbons, having from -10-This paper uses the Chinese National Standard (CNS) Α4 specification (2 丨 〇'〆297mm) --------- private clothing ----- 1T ------ α {(Please read the notes on the back I% to write this page first) A7- B7 Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Description of invention (8 aliphatic groups of about 4 to about 10 carbons, And its mixture Alternatively, silicone and silicate materials are also possible, based on the total molar percentage of the dielectric material, including from about 0% to about 10%, and preferably from about 2% to Approximately 4% of scales. The preferred silicone materials suitable for use in the present invention are commercially available from Rexon (8-11-1 with 51 corrections 311 ^), with, heart (; 1 ^ 355, @ The trade name of a suitable silicone material contains about 100 parts per billion or less, preferably 50 parts per billion or less, and more preferably 10 parts per billion or less. Trace element impurities such as sodium, potassium, gas, nickel, magnesium, chromium, copper, manganese, iron, and the like, and preferably have from about 300 to about 5,000, more preferably from about A molecular weight between 500 and about 1,000 molecular weight units. The dielectric material can be applied to the substrate via conventional spin coating, dip coating, sprinkling, or meniscus coating methods that are well known in the art The details of this type of method are described in, for example, "Processing Equipment and Automation Systems" published by Integrated Technology. The thickness of the dielectric film on the substrate can be applied to the substrate. However, typically, the thickness can vary from about 500 angstroms to about 0 angstroms, and preferably from about 3,000 angstroms to about 9000 angstroms. The amount of sOG liquid applied to the substrate can range from about 1 angstrom! It varies from milliliters to about 10 milliliters, and preferably from about 2 milliliters to about 8 milliliters. In a preferred embodiment, the silicone material is applied to the substrate from the center, and then at about 500 revolutions per minute and Between about 6000 revolutions per minute, preferably between about 1500 revolutions per minute and about 4000 revolutions per minute, the substrate is rotated at a varying speed for about 5 to about 60 seconds, preferably about 10 to about 3 〇Seconds, to dissolve __-_ 11 ~ This paper is suitable for CNS A4 specifications (21GX297mm). (Please read the back side of the * Notes first. Write this page on the board)-Order — Printed by the Central Sample Bureau of the Ministry of Economic Affairs, Beigong Consumer Cooperative, 3087〇9 A7- _________B7 V. Description of the invention (9) The liquid is evenly distributed on the surface of the far substrate. Suitable materials that can be deposited on the substrate via CVD include plasma-enhanced tetra-ethyl ortho silicate (hereinafter referred to as PETEOS), silane-based oxides such as silane and disilane, boron-zushi 8¾ salt glass (bo-ron-phosphosilicate glass, hereinafter referred to as BPSG) 'pulverized § £ salt glass (ie 11〇5 弩 1105 丨 1 丨. 316 Lu 1355, hereinafter referred to as 1 > 5〇), such as silicon nitride ( SiN) nitrides and non-stoichiometric mixtures containing the nitrides, anhydrous films, such as those deposited using silane (SiH4), ammonia (NH3), nitrogen and nitrous oxide (N2 0) and mixtures thereof Oxynitride, and boron-phosphorus glass from tetraethyl orthosilane (hereinafter referred to as BPTEOS), and mixtures thereof. Silicon oxide film is preferred. The CVD film can be applied to the substrate in the presence of a gas via a conventional CVD method well known in the art. The details of this type of method are well known in the art and are described in, for example, the works of Josica; Ken, and Mei Tiesen, which are incorporated herein by reference. The gas chosen for CVD applications depends on the type of film desired, but typically, such gases include a mixture of TEOS and oxygen, or oxygen, silane, and diborane (B # 6), phosphorus A mixture of alkane (PH3) and nitrous oxide (n2〇), and preferably TEOS. The number of CVD coatings deposited on the substrate surface is proportional to the desired film thickness and the film thickness can vary from about 1000 angstroms to about 3,000 angstroms, preferably from about 3,000 angstroms to about 800 〇Angstroms. The number of cvd applied to the substrate can be changed according to the desired film thickness. The gas flow rate required to obtain these thicknesses is shown in ------12-this paper ruler and money) Α4 · ΤΤΓ〇χ 暗%) — '' '·---------- ^- (Please read βί on the back of the page first / note ^-.% To write this page), -0 line ^ 〇87〇g A7-

The Central Bureau of Standards of the Ministry of Economic Affairs as: Printed by the Industrial and Consumer Cooperatives. Moon Heart: Josica; and Mei Tisen's works. Typically, 'apply an SOG or CVD film to and grow an ultra-thin oxide or compound film on a wafer or other planar substrate, such as a silicon wafer with circuit patterns on the surface Process into IC or other microelectronic devices. Typically, the diameter of the substrate varies from about 2 inches to about 12 inches. 'Although the present invention will still be effective for larger substrates. Alternatively, the substrate coated with pre-hardened SOG may be around 50 °. 〇 to about 25 (TC temperature is heated from about i to about 3 minutes. In a preferred embodiment, first pre-hardened S 〇G at about 50. (: heating for about 30 seconds to one minute, However, at about 150T: heating for about 30 seconds to one minute, and heating for about 30 seconds to one minute at about 25 ° C. As a result of this heating, the pre-hardened liquid SOG material portion The ground is cross-linked and cured. The SOG-coated substrate is present in a group of gases selected from the group consisting of oxygen, argon, nitrogen, helium, and mixtures thereof, preferably oxygen, A, nitrogen, and mixtures thereof. Next, the substrate surface is exposed to electron flux to harden it. Rat gas is better. The temperature at which electron beam exposure is performed will depend on the desired characteristics of the final film formation and the length of the desired processing time. In this technique Those with ordinary skills can easily optimize the exposure conditions to obtain the claimed results, but the temperature will generally be in the range of about 25 ° C to about 40 ° C. The pressure during electron beam hardening will From about 10 mTorr to about 200 mTorr, and preferably from about 10 mTorr It varies from about 40 mTorr. The time of electron beam exposure will be related to the current density and the electron beam dose applied to the substrate. Those with ordinary skills in this skill can easily make the exposure strip The paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210 x297 · ^ ¾-- f Jingxian aphid read the back < 'Note 1% write this page} II ------------- ------- V.-ί —II I-A7- A7- Employee's consumption cooperation of the Central Prototype Bureau of the Ministry of Economic Affairs. Printing 5. Description of invention (11) Optimization of the pieces to get the declared results , But generally speaking, up to about 50000 'is preferably from about 2500 to about 10000 microcoulombs / square. Under the application of electron beam dose, the exposure will vary from about 2 to about 4 5 eight minutes' and better It varies from about 5 to about 25 minutes. Electron beam acceleration: can be changed from about 1 to about 25 thousand electron volts. The dose amount and the selected acceleration voltage will be related to the characteristics and thickness of the film to be processed. The coated SOG substrate can be exposed to the electron beam in any processing chamber having a device that provides electron beam radiation to the substrate placed therein. The chamber is also equipped with a device that emits electrons into a gas atmosphere containing oxygen, argon, nitrogen, helium and a mixture therein, and preferably oxygen, argon, and nitrogen, and is also equipped with electron beam exposure. In the embodiment, the coated SOG substrate is placed in a processing chamber commercially available from Electron Vision, San Diego, Calif., Under the trade name "ElectronCure" TM, and the processing The operating principle and performance characteristics of the chamber are described in US Patent No. 5,00 1,178, which is incorporated herein by reference. This processing chamber advantageously provides " wide, large electron beams " ' The electron beam can affect an area from about 4 to about 144 square inches. Similarly, the CVD-coated film undergoes the same process as described for hardening the SOG-coated film, and is annealed under the same conditions. In applications where ultra-thin gate oxides or nitrides are grown on the substrate, the type of film grown depends on the composition of the substrate and the substance grown in the selected gas state. Any composition such as gallium arsenide (GaAs) or silicon-containing composition such as crystalline silicon, polycrystalline silicon, amorphous silicon, or epitaxial silicon, and preferably silicon dioxide (Si02), is a suitable substrate material. Oxide or -14- This paper scale is applicable to China National Standard (CNS) A4 specification (210X297mm) --------- private clothing ------ lτ ------ 0 (please Read the precautions on the back and% to write this page) 1. Employee Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs of the People's Republic of China, 'Invention Description' (12) The growth of nitrides in oxygen, ammonia, nitrogen, nitrous oxide, and reaction products And the mixture occurs in the form of gas, sublimated solid or vaporized liquid. Oxygen is preferred. According to the present invention, an oxide or nitride ultra-thin film layer is grown on the surface of the substrate while exposing it to an electron beam in the presence of gas. The electron beam exposure time lasts for a time sufficient to allow the gas to ionize simultaneously and react with the compounds present on the substrate surface. The thickness of the grown film can vary from about 10 angstroms to about 1000 angstroms, and preferably from about 50 angstroms to about 80 angstroms. Otherwise, the processes and conditions for growing such an oxide or nitride ultra-thin film layer are similar to those described for hardening SOG-coated substrates. As a result, both the uniformity of the composition and the thickness of the ultra-thin oxide or nitride film grown on the substrate are improved. As a result of exposing the coated substrate to electron beam radiation according to the present invention, the film produced thereon is unexpectedly modified to become a new, single chemical form. For example, ", FTIR" analysis reports that after the initial combination of s⑽ to be electron beam hardened, there are no longer c H groups attached to their main chain. However, primary ion mass spectrometry (Secondary I〇n Mm Speetroscope (hereinafter referred to as SIMS) analysis proved that carbon remained in the film. Compared with the hardened coating with an oxidized finish in a layer of 0.05 mm and 3 microns above the hardened coating or film 'in the hard-cut oxygen-fired sog and hard sop-containing coatings of the present invention The 瑗 is evenly distributed throughout the membrane. The substrate coated with the film processed according to the invention can be used for any dielectric and planarization applications in microelectronic manufacturing. The characteristics of the coatings treated according to the present invention are that they exhibit excellent dielectric properties. The paper standard is related to financial standards (private clothing ----- 1T ---- -^ (Please read the notes on the back first / Bian write this page) 3〇S7〇g

V. Description of the invention (13 Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs, without the need to add additional polymers to them. The dielectric properties of the SOG or SOP coatings hardened according to the present invention range from about 25 to about 33 The variation between is preferably between about 2.9 and about 3.0. Another unique feature of the films treated according to the present invention is that their density is significantly increased as a result of the electron beam processing step. The film coating processed by the child not only has a wet etching rate comparable to that recorded by thermal oxide in 50: 1 Buffered Oxide Etch (hereinafter referred to as boe), but also the film It is also resistant to oxygen plasma, can be chemically and mechanically polished, and has good uniformity 'and can tolerate the temperature prediction value associated with typical w filler treatment. More specifically, according to this The silicone coating hardened by the invention and then exposed to nitrogen at 425 C for 1 hour only shrinked by *%, and when the film was exposed at 700 C for up to 1 hour, no additional shrinkage occurred. Oxidation of the deposit In terms of things The present invention provides a method to produce a densified film without the use of high temperature annealing. More specifically, refractive index analysis shows that the result of annealing the CVD film composed of PETEOS according to the process of the present invention is "rich in silicon" Film, the result cannot be obtained by other methods known in the art, such as adjustment of the gas ratio during film deposition or thermal annealing. This is particularly advantageous because this " rich in silicon The " film is known to prevent field reversal and thermal electron degradation effects. Furthermore, not only does the process of the present invention occur at temperatures much lower than those used in prior art thermal hardening or annealing processes, but also hardens or anneals such films The time is also significantly reduced. _ The use of the present invention also results in an improved ultra-thin film oxide or nitride on the substrate-16- Wood paper scale is applicable to China National Standards (CNS) A4 specification (2lOX 297 public funds)- -------- private clothing ------, 玎 ------ #. Ί (please read the notes on the back _.¼ to write this page) A?------ ------- B7 5. Description of the invention (μ) ~~ " ~ '~~-Object coating, so this type of oxidation The growth of metal or nitride can be controlled. The present invention can be incorporated into several well-known processes, such as: post-processing that can be arbitrarily configured; 2) traditionally etched contact processing; and 3) intermetal dielectric Treatment >>: The non-limiting examples of the column illustrate the effect of exposing the coated substrate to electron beam radiation to produce a film with improved characteristics on the substrate. The films produced in the following examples were analyzed according to the following test methods 1) Film thickness: A calibrated Nanospec® AFT 010_180 computerized film thickness measurement system available from Nanometncs was used to make A wavelength from about 480 nm to 790 nm is scanned across the wafer 'and converted into angstroms (A) by its internal computer. Measurements at five different locations on the wafer are required, and then these five values are averaged. 2) Percentage of film shrinkage: This value is obtained from the thickness measurement value obtained according to the procedure described in the film thickness test and the ratio of those recorded after each processing step. 3) Wet touch rate determination: The details of performing this test are described in a report by Lexicon, Advanced Microelectronics Materials Division, Relative Etch Rate Measurement "(January 30, 1995). 4 ) Dielectric constant: The dielectric constant of the SOG film is determined by the standard capacitance-voltage (cv) curve technique 'use a metal-oxide semiconductor (MOS), which will be used like any other dielectric film, hereinafter referred to as MOS ) Capacitor structure. The dielectric constant is C (take large value) / C (oxide) derived from the CV curve, the measured film thickness, and the capacitor level _ -17-_ Falcon (CNS) A4 specification (210X297 public completion) ~ — * HI HI. ^-(Please read the notes on the back of the aphid first. ^ Write this page)

'1T Printed and printed A7-B7 of the Central Bureau of Standards, Employee and Consumer Cooperative of the Ministry of Economic Affairs. Printed and printed on the Peking Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. Description of the invention (15) The area of the board (chain point) is calculated. 1 〇 KHz _ 丨 〇 megahertz) Inductance capacitance and resistance (Induction Capatance and Resistance (hereinafter referred to as LCR) meter 'current and voltage source, ramp generator, and picoammeter HP 4061A semiconductor measurement system, To measure the CV west line of the dielectric film. The measurement, calculation, and drawing enhancement functions are performed on the dedicated HP microcomputer through the IEEE-488 standard interface bus. The substrate is detected on a manual detection platform placed in a metal black box. Further details of this step are described in the "SOG Dielectric Constant Theory" (i January 3, 995) reported by Lexicon, Advanced Microelectronics Materials. 5) Refractive index ... This value uses a corrected Aut〇EL ιι®307 square ellipsometer, which can be constructed from Rudolph Research. The calibration and measurement procedures are described in the "AutoEL II 307 Modified Ellipsometer Calibration and Maintenance" reported by Lexicon, Advanced Microelectronics Materials Department (June 5, 1995). 6) Fourier transform infrared spectroscopy: Fourier transform infrared spectroscopy shows the vibration of atoms in the molecule. Atoms of certain groups have characteristic vibration frequencies that exist in different compounds. Details such as the frequency position of infrared band characteristics of some organosilicon groups are described in, for example, Launer '" Infrared Light of Organosilicon Compounds Analysis: Spectral-Structure Interactions (1990 'Wuyue, Burnt Hills). 7) Contact impedance: The contact impedance procedure is described in Luo (L〇h), W_M_ et al., ”Modeling and measuring of contact impedance, 2nd, International Society of Electronics and Electrical Engineering Reports 512 (1987) March). -18 Each paper size is applicable to the Chinese National Standard (CNS) A4 specification ΥΤΪ0Χ297 mm) --------- 装 ------ 1T ------ ^ ί (please read ¾ first Matters needing attention ¾¼ write this page) A7 · B7 printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Invention description (16) 8) Device and field starting voltage and transistor voltage (Vts): These voltages are measured and obtained The measurement techniques are similar to those used in the examples, which are illustrated in Andoh, τ et al., "Design Methodology of Low Voltage MOSFETS", International Electronic Device Conference 〇994 1 February). 9) Time to collapse (QBD): This procedure is illustrated in Grove ((} r〇ve), Semiconductor Device Physics and Technology, Section 10 · 5 (New York, 1967): Chen, KL et al., International Electronic Devices Conference Technical Digest 484 (1986); and Ronuntree, RN, International Electronic Devices Conference Technical Digest 580 (1988). 10) Through-hole impedance: Through-hole impedance is used for very large / super The technology in the "Multiple Interconnect Seminar on Large Integrated Circuits (February 1 995)" was measured by the technique of "pre-sputtering degassing treatment for through-hole contacts with enhanced through-hole reliability during the planarization process on glass" 11) Impedance and Silicide Impedance: The instruction of Silicide Impedance is used in Shimizu, S. et al. &Quot; for 0.15-micron CMOS process with high performance and high reliability ", International Electronic Device Conference ( 1 February 994) 〇12) Secondary Ion Mass Spectroscopy (secondary Ion Mass Spectroscopy, hereinafter referred to as fcl SIMS): SIMS analysis is used to determine the presence of trace elements in the SG film. First, use a billion Cameca SIMS Set up and measure SOG film. The use of resistive anode encoder (hereinafter referred to as RAE) ion imaging detector receives input from the Camerka device and is used to produce ----- ---- Buttons ------ lsτ ------ ^, ί (please read the back first <: Note ¾.¼ write this page)

Printed by the Employee Consumer Cooperative of the Ministry of Economic Affairs of the Ministry of Economic Affairs 5. Description of the invention (17 direct technical salt of any element on the surface of the film 2, the eight soldiers and concubine ions are cloth images and the time when the element changes horizontally, Collect data such as trace ion element concentration as a function of horse film depth s :: analysis using ™ 6_ type quadrupole mass reader, in this instrument :: burst: to oxygen with a net impact energy of 6 eV One ion collision with cesium to obtain positive & _ negative-, and enter the ion mass spectrum. The analysis conditions are reported in Table 1. Table 1

The relative sensitivity factors (hereinafter referred to simply as RSFs) obtained from the analysis of dose I ion implantation standards are based. The secondary ion count of the analyst and the average matrix of the entire oxide 3〇si information into 1 ---------- install i-line. Ί (Please read the notes on the back r ™ \ write This page) _

3〇87〇9 A7- B7 5. Description of the invention (18 I-- (please read the notes on the back ^-.% To write this page first) ratio. The reproducibility of the analysis is at an ion count rate of 1 X 103 or more , Typically less than ± 10%. Sputtering depth is corrected by measuring the depth of the recessed hole using a Tencor P-ίο surface measuring instrument. Additional features of this technology are further explained by Charles Evans and the sponsor (Charles Evans and Associates) in the booklet (October 1993). Examples Example 1: Preparation of SOG-coated substrates will have 6-inch diameter wafers that are commercially available from Lexicon. The name "Accuglass " ® 3 1 1 silicone SG is sprayed on the surface of the wafer by spraying about 3 ml to about 4 liters of SOG, and then can be purchased from the Japanese printing company. The SOG coater track is coated with 72 T, 20-30 mm Hg, and 40% humidity of the rotating cover plate at about 35 ° revolutions per minute for 2 seconds. The coated wafers are similar Under the conditions, after rotating at about 3,000 rpm for about 20 seconds, the wafer was printed on a large-scale coating machine rail. Heating on the hot platform in the, respectively at 8 (TC, 12〇. (: And 175 ° C for three consecutive periods of 120 seconds. Example 2: The thermal hardening of the wafer coated with S Θ Θ 、 Printed by the Employee Consumer Cooperative of the Central Standardization Bureau of the Ministry of Economic Affairs, and then a wafer produced according to Example 1 is present in Black-Max-type Luzi available from MRL Industries, at 425 ° C and 1 atmosphere of nitrogen Under hardening L, when. The final formed coated wafer analyzed a film thickness of 3000 angstroms (after hardening), 7% film shrinkage, and a wet etching rate of about 37 angstroms / second. It is covered with sog The electronic transformation of wafers puts the wafers produced according to Example 1 into the electronic video company

The A7 B7 was printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. The description of the invention (19) was obtained. The trade name was ElectronCureTM in the processing chamber, and in the presence of various gases including nitrogen, oxygen, argon, and lan. And under a temperature from 25 to 40 (TC and a pressure ranging from 10 to 40 mTorr, it is exposed to a current of 8 to 20 mA, from 1000 to 1000 micrometers Coulomb / cm2 dose 'and electron beam with acceleration voltage from 5 to 25 thousand electron volts. Analysis of wafers coated with electron beam hardened SOG indicated that the film shrinkage of ι〇_3〇0 / 〇, and in 50: 1 (deionized water: hydrofluoric acid (HF)) solution of buffer oxide etching at a wet surname rate of 1 -1 1 Angstroms / sec, depending on the selected dose, energy and temperature. Figure 1 Shown are the thermal hardening according to Example 2, the electron beam hardening according to Example 3 'and the unhardened according to Example 1, ie, thermal baking, the FTir spectrum of the wafer. As shown in the FTIR spectrum of Figure 1, the c Η stretching mode The lack of increased absorption and the uniform distribution of carbon in the SIMS spectrum of Figure 13 as indicated by the Jun peak It was confirmed that the composition of the film after exposure to electron beam treatment has changed and water is not absorbed in it, which is obvious. Declaration 4: i Was hardened at varying temperature and electron beam dose according to Example 1 It is produced and hardened according to Example 3, except that in the presence of argon gas' at a temperature of 25C, 250C, or 40O-C, each wafer is exposed to 1000, with an energy of 10 thousand electron volts. One of the four doses of 3000, 5000, or 10000 microcumens per square centimeter. Figures 2⑷ and 2 (b) illustrate the FTIR performance of each wafer produced according to Example 4. As shown in Figure 2 (a) The increase in absorption between 3600 and 3700 cm -1 results in exposure to 100 and 300 microcoulombs at any of the three temperatures / --------- ^ .- -(Please read the notes on the back to fill in this page first)

A7- I ------- B7 ________ · V. Description of the invention (2〇) A square centimeter wafer shows hydroxyl stretching, which signifies the presence of residual water in the membrane. However, by increasing the amount of electron beam scraping to be equal to or greater than 5000 microcoulombs / cm2, the water in the film can be greatly reduced or completely eliminated, as shown in Figure 2 (b). Fuye's agent dung, energy, and electron beam hardening wafer Hlj under Wentang can reduce the film shrinkage of the wafer. The wafer is generated and hardened according to Examples 1 and 3, and then measured by baking and pen rice. The film thickness after hardening was analyzed for film shrinkage. Figure 3 graphically illustrates the film shrinkage as a function of electron beam dose at temperatures of 25 ° C, 250 ° C, and 400 ° C, compared to the shrinkage of the thermoset film. Figure 4 shows the film contraction versus electron beam energy. As is apparent from FIGS. 3 and 4, the shrinkage of the electron beam hardened film is generally larger than that of the thermoset film. Moreover, as the dose increases, the film shrinkage of the electron beam cured film also increases. In addition, the effect of temperature on film shrinkage has been observed only for films hardened at low electron beam doses; however, when the dose exceeds loooo microcoulombs / cm2 and the temperature is above 40 (rc The change is relatively insensitive. Sog, thermal oxide, and thermally hardened sog wafers are in a state of change # 丨 Comparison of the wet etching rate of electron beam hardened wafers at summer temperature Wafers were produced and hardened according to Examples 1 and 3, and then the wet etching rate was analyzed. On uncoated wafers, in a diffusion furnace such as that mentioned in Example 2, at 4 liters / minute In the presence of gas flow oxygen, a thermal oxide film grows at a temperature of about 1050t and atmospheric pressure. Wet etching rate of various films in 50 ·· 1 solution of buffer oxide etching___ -23 -This paper scale is applicable to the A4 specification (21GX2 & Gongchu) of Guanguan County (CNGX), printed by the Ministry of Economic Affairs Central Standards Bureau Employee Consumer Cooperative 308709 A? ___ 〇7 ______ ____ V. Invention description (21) By being immersed in it every time After 5 minutes in the liquid, depending on the wet etch rate of the film, measure the remaining film thickness and measure it. Figure 5 shows the wet etch rate except for the thermally hardened wafer and the thermal oxide wafer Wet etch rate of electron beam hardened wafers vs. dose. As can be seen from FIG. 5, the wet etch rate of wafers coated with electron beam hardened SG is 3 to 5 Angstroms / sec. In the range, it is very close to the etch rate of 3 Angstroms / sec measured by thermal oxide wafers, but is considerably lower than the etch rate of 37 Angstroms / sec measured by thermally hardened SOG wafers. The low etching rate of s〇G wafers indicates that this type of sOG film is much denser than the thermally grown oxide film. Figure 6 (a) to (d) It shows the changes of the wet etching rate and the thickness of the film thickness of the electron beam hardened film at the doses of 1000, 3,000, 5,000, and 10,000 microcoulombs per square centimeter, respectively. 囷 6 (a ) And it is obvious that the film hardened at a temperature ranging from 25.0 to 400 C and a dose of 10,000 microcoulombs per square centimeter, and The wet etching rate of the film hardened at a temperature of 25 C and 3,000 microcubits per square centimeter is fairly constant across the entire film thickness. This consistency in the number of wet etching rates is representative of Therefore, it is possible to produce a film with a highly uniform density using the above-mentioned electron process f conditions. As illustrated in Figures 6 (b) to 6 (d), for the temperature and 3 000 microcoulombs / For films that are hardened at a dose of square centimeters, and films that are hardened at any temperature and at a dose equal to or higher than 5000 microcoulombs / square centimeter, the wet etching rate increases as the film thickness increases up to about M00 Angstroms, Then remain relatively fixed. -*-— _ _ This paper scale is applicable to country t (cnS) --------- installed-Please read the notes on the back first ^ ·· The final copy of the book Amaranth) The Ministry of Economic Affairs Sample A7- Β * 7 printed by the Consumer Cooperatives of the Prospective Bureau V. Description of invention (22) Similarly, 'Figure 7 shows the electrons that change between 5 thousand eV and 25 thousand eV at a temperature of 400 ° C The beam energy and the wet etching rate of the hardened film at a dose of 1000 microkumbs / cm2 are also relatively fixed. I'J chemical-mechanical polishing, followed by an early lightning strike of oxygen plasma ashing 1 wafer F τ IR, the coated wafers are produced and hardened according to the process described in Examples 1 and 3, and then polished and cleaned with HF according to the process described in Example 1 3 followed by oxygen Plasma ashing. The details of oxygen plasma ashing are described in, for example, 'CK Wang (Wang) et al. &Quot; Research on Plasma Treatment on Siloxane SOG ", VIMIC Seminar (June 1994). Figure 8 shows these in The ftir spectrum of the film in each hardening stage: (丨): After using electron beam radiation hardening at a dose of 10,000 microcoulombs / cm 2 and a temperature of 20 (rc); (2): the hardened film of stage (1) is subjected to chemical -Mechanical polishing (chemical-mechanical polish, hereinafter referred to as C Μ P), followed by wet cleaning in HF solution and oxygen plasma ashing; (3): 3 days of exposure to the following stage (2) After atmospheric conditions: and (4) _ · Then the atmospheric exposure in the following stage (3), after exposure to electron beam radiation again under the conditions of the gnawing section (1). Figure 8 illustrates between 3600 and 3700 cm-1 The absorption at the wavelength increases, and the increase in the hydroxyl symbol in the film symbolizes the increase in the moisture absorption of the film. After the CMP and cleaning process in stage (2), the hydroxyl extension is particularly noticeable. However, this moisture Can be removed by re-exposure of the film to electron beam treatment, as in Displayed in 8. ^ 4 · Line booking (please read the precautions on the back to fill in this page) -25- A-? B7 3〇87〇9 5. Description of the invention (23 Example 8: Exposure to atmospheric environment and selectivity The FTIR results of the lightning ray after immersion in water *-~ The cured film was produced and cured after the wafers were produced according to the processes described in Examples 1, 2 and 3. Figure 9 compares the presence of oxygen at 425 1 hour of heat-hardening wafers at a temperature of ° C, and FTIR wafers hardened at a dose of 10,000 microcoulombs / cm 2 and an electron beam temperature of 20 ° C and exposed to atmospheric humidity for 7 days, FTIR Spectroscopy> The lack of electron beam hardened wafers at 3600-3700 (1 / cm) wavelength shows an increase in absorption. They show that, in contrast to thermally hardened films, they do not absorb moisture. Figure 10 (a) and (b) compare In the presence of argon, it is hardened with an electron beam at a dose of 10,000 microcoulomb / cm2 and a temperature of 400 ° C, and it is immersed in water with a temperature of 25Ό for 24 hours at various energy levels .. .................................... FTIR spectra of the film before and after. After immersion in water In the FTI R spectrum before and after the middle, the lack of visual difference shows that when immersed in water for 24 hours, the electron beam hardened film does not absorb moisture. Example 9: In nitrogen, argon, helium, and oxygen FTIR results of electron beam hardened film under ambient conditions. Wafers were generated and hardened according to the processes described in Examples 1, 2 and 3. Except that the film was in the presence of nitrogen, argon, helium, and oxygen, respectively, at 10,000 micrometers. The dose of coulomb / cm 2 and the temperature of 200 ° C are exposed to the energy of the electron beam. After these wafers were aged for 7 days by exposure to atmospheric moisture, FTIR analysis was performed. · A picture 11 shows all gases except helium at 3600-3700 (1 / cm) wave __ -26- This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) Read the back first, V notes, and write this page.) A7 B7 printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economics. 5. Description of the invention (a slight increase in the absorption of 24 advantages. Because of the & It hardens in the presence of oxygen without subsequent moisture absorption. Mechanically polished wafers are produced and hardened according to the process described in Example 4, and then polished according to the processes described in Examples 7 and 13. And cleaning. During cleaning after polishing, contaminants are removed from the surface of the film due to simple oxide etching in HF. This type of immersion typically convexly shows the low-density bonding wire in the electric propeller chamber, which needs to be covered The layer is deposited to smooth the bonding line. The thickness measurement of the CMP-treated film indicates that the electron beam hardened stone oxy-sinter material has an easy-to-control polishing rate, which is similar to the unmixed rate, and does not Will be at The cleaned film after polishing shows any areas with a high # engraving rate. Set Μ_11: a rear device that can be arbitrarily configured will be a 0.5-micron complementary agent from the Cypress Semiconductor Corporation. The semiconductor static random access memory can be arbitrarily configured post-process device wafers, coated twice according to the process described in Example 1, and then at uo, 2s〇, or 3 according to the procedure described in Example 4. 〇〇.〇 temperature, and 5000, 7500, and 10000 micro-coulombs / square centimeters of the hardening. Can be arbitrarily configured after the treatment of the full details are described in, for example, Cleeves (Cleeves) M. In the work, the International Electron Institute ’s technical report of the Very Large Integrated Circuit Technology Abstracts Proceedings No. 6 (1994).-'The thickness of the "double-layer coating" finally formed on the wafer is about 65. 〇 埃. In throwing -27 The paper standard is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -II II-· Reference-(please read the back, V note ^. ^ Written education) Ministry of Economic Affairs A7-B7 Printed by the Central Bureau of Standards Employees Consumer Cooperative Description of the invention (25) Please read the notes on the back 'After burning and drying the paper, the final formed wafer is ashed and then cleaned with HF' as explained in Examples 7 and 13. -TiW colloid layer is deposited directly on the polished SOG surface of the wafer. Then, before 45 (TC Tungsten chemical vapor deposition (hereinafter referred to as CVD W), the wafer is exposed to 60 (TC Rapid thermal anneal (rT a) for 1 minute. No peeling of the film or gas exposure was observed in the finally formed crystal circle. The electron beam hardened "double-layer coating" film is also set to 425. (: And 700 X: baked in an oven at a temperature of 30 minutes. The film shrinkage analysis of the baked film at 425X: temperature indicates that the thickness is 4% based on the thickness measured directly after rapid thermal annealing Shrinkage. No additional shrinkage occurs at temperatures as high as 70 ° C. Therefore, as can be seen from Example 11, the amount of film shrinkage is independent of temperature. Furthermore, the resulting wafer is crack-free and has good planarization.上 上! 1 2: Etched contact device wafer The Ministry of Economic Affairs, Central Bureau of Samples and Employee's Consumer Cooperative printed a traditional etched contact device wafer that will be 0 _ 5 micron complementary metal oxide semiconductor static random access memory, according to The procedure described in Example 11 was created to 'harden, polish, and clean, except for the simultaneous preparation of both single-coated and double-coated wafers. During the manufacturing steps required for the fabrication of all these devices' observed gas off or exposed film. complex 3 ... CMP wafer directly on the metal coating made of two layers ACCUglass® 311 s〇G a metal deposited directly, i.e., 'Ming' formed pattern Silicon On the circle, and electron beam hardening according to the conditions described in Example 4. The TE〇s of 9000 angstroms in the form of cVD 28 paper standard Guanjia standard (called A4i ^ x 297 Central Standards of the Ministry of Public Economy Printing by the Bureau ’s Consumer Labor Cooperation

AT B7 V. Description of the invention (26) Deposited onto the SOG layer thus formed, and then polished using Ipec Westech technology equipped with an IC 1000 / SUBA 4 polishing pad available from Rodel Machine, polish under the following conditions: wafer pressure of 7 pounds per square inch; wafer polishing temperature of 110 ° F: SC 1 12 slurry flowing at 130 ml / min, available from Rippey : Rotation speed of the platen (fixed polishing pad) at 28 rotations per minute; stage (fixed wafer) at 28 rotations per minute Rotational speed: 185 cm polishing position: and 5 cm platen at a speed of 2 cm / s oscillation. The wafer is polished and cleaned using H F and then ashed with oxygen. No adhesion problems or other unexpected interactions were seen between the SOG and TEOS layers. In order to expose the interface between the SOG layer and the TEOS layer to polishing stress, the wafer produced in this example was then polished under similar conditions. No peeling or other abnormalities were observed. Real Example 14: The number of sog layers on a metal with exposed interface changes Example 1 3 can be repeated on the wafer using-, two, or three layers of sog coating. These wafers also show Excellent flatness without cracking of the SOG layer. Real 15: Covering TEQS, forming wafers with varying number of SOG layers TEOS-covered wafers were produced and hardened according to the processes described in Examples 13 and 14, but with the use of about 12,000 angstroms The exception is the dosing of TE〇s oxide dielectrics on the active device with doses of 5,000 and 10,000 microcoulombs per square centimeter and energies of 9 and 15 thousand electron volts. The energy required for electrons to reach the surface of the wafer is estimated to be about 12 thousand electron volts. The selected electron number energy value is therefore expected to place the electrons within the surface of the TE〇s film and enter --- 29- This paper scale is applicable to the Chinese national standard (CNS --- gutter < (know first ¾ read the back Matters needing attention: 蜞 本本 X) Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs Α7 · " ------------- Β7 5. Description of the invention (27) into the silicon Ba circle itself .Then the hardened wafer is processed by contact etching, contact filling (w filler) and the local interconnect formation step described in Example η, and the device and the field start secretion and the Qbd of the oxide of the electrode are tested The details of these tests are described in Woolf, "" Secondary Metal Oxide Semiconductor Field-Effect Transistors ", Chapter 3, Very Large ㈣f 路 纪元 _ Processing (Dating). Field Start The results of the voltage test did not refer to the overheating of the voltage (Vts) of the channel transistors, / Fu Piao- 丄 "7 rounds but no small deviation # on the Vts of the P-channel transistors was shown. However, At a high energy of 15 thousand electron volts, the allowable range of the 30-mV offset and vt variation of the p-channel device I Vts is up to about 150 mV In particular, it is still relatively small. The dose increase of 15,000 volt I electron beam energy exceeds 10,000 microcoulombs per square centimeter resulting in systemic degradation of QBD ’, which means that The polar oxide may become damaged during the exposure of this number of electron beams. Complex 1 6: Test the characteristics of the structure of random access memorizer in the static bear which is a dielectric

Accuglass® S0G film "double-layer coating" according to the procedure described in Example 3, and under the conditions of 20 (TC, 10 thousand electron volts, and 10000 microcoulombs per square centimeter, Generated and hardened to a static random access memory (SRAM) test structure of polysilicon coated with 0.5 micron. Then, the conventional etching-based processing method of Example 丨 2 was used. , Or the post-process of Example 11 which can be arbitrarily configured, making a 0.6 micron contact in the structure coated with hardened SOG. In the post-processing structure, the SOG characteristics are different before the contact metallization, but after the contact is formed, the difference is different. The annealing temperature of 425.〇, 600. (:, and this paper scale are applicable to China National Standards (CNS) A4 specifications (210X297; t)) seed coat ir, — ^ (please read the back, V Cautions ¾¼ Write this page] Fifteen. Description of the invention (measured at 28 700 C. The silicide resistance is not affected by the S 0 G process because of this low temperature estimate. 1 In order to form the via hole by the traditional etching process, SOG layer as illustrated in Examples 13 and 14 TEOS Si〇2 covering 9000 Angstroms, and then polished off according to the process described in Example 1 J. In this layer of dielectric etched 7 holes 3 through holes filled with a blanket W and illustrated in, for example, Η 小島 (K〇J1ma) et al., The etching-out process in the very large-scale integrated circuit (June 1988) using multiple coatings rotating on glass was performed. As in, for example, Anler (Anner), " Introduction to Planar Processing " 79-90 (1990) shows that the electrical impedance test of structures with etched contacts shows that the contact resistance of the Hiroko beam hardened SOG layer is higher than Doped and reflowed 1 £ 〇5 Si〇2; ι contact resistance of the electrical layer. This is probably caused by a large over-etching in the contact etching, the over-etching will etch away most of the TiSi2 from the underlying oxide. &Quot; " As illustrated in FIG. 12, the QBD of the gate oxide is equivalent to the doped and reflowed TEOS Si〇2 with etched contacts, which means that during the rapid electron processing, it has a thin SOG layer. The damage of the wafer to the oxide is smaller than that of the wafer with TEOS Si02 oxide. A summary of the results is provided in Table 2 (please read the back page-the precautions ¾. Also write this page) Binding · Binding the Ministry of Economic Affairs Central Standards Bureau employee consumption cooperation du printing -31-each paper size applies to the Chinese national standards ( CNS) A4 specification (210X297 mm) V. Description of invention (29) A-7 B7 Central Ministry of Economic Affairs Employee Consumer Cooperative Printing and Controlling the etching type with SOG The post-processing type with SOG (700 " C Annealing ) Post-processing type with SOG (600 °: Annealing) Post-processing type with SOG (425 " C annealing) Contact type K) UJ N) Ό Ui 00 N + contact resistance (ohm) N) UJ LA 35Ι * U) Os P + class σν 00 Open circuit ο Automatic alignment (P +) 00 i'r 〇 \ Automatic alignment (N +) Pass ¥ Pass through automatic alignment contact leakage \ y \ ON Silicide impedance> 5000 g 205 270-Ten + 4XU This paper scale is applicable to Chinese National Standard (CNS) A4 specification (210X 297mm) --------- seed coat ------ 1T ------ ^ I (please read the notes on the back of Jing Jing ## to write this page) A7- B7 V. Description of Invention (30) Employees of Central Bureau of Standards, Ministry of Economic Affairs Fei Cooperative Printed Complex 7: Electron beam treatment CVD TEOS for multilayer dielectrics will have a thickness of between 1000 angstroms and 8000 angstroms, preferably from about 1500 angstroms to about 3000 angstroms, a layer of TEOS film at about 350 . (: Up to about 450. (: At a temperature of about 7 to 9 Torr, deposited on a polysilicon wafer by CVD. Then in the ElectronCureTM device purchased by Keyou Electronics, in the presence of nitrogen or argon , At a temperature of about 200 ° C to about 25 ° C and a pressure of about 10 mTorr to 40 mTorr, the Ding Eos film is exposed to about 5000 to about 10,000 microcoulombs / The dose of the square centimeter and the electron beam radiation flow rate of about 5 to about 15 thousand electron volts are about 10 minutes. The resulting film is rich in silicon and dense TEOS oxide. Then the silicate and phosphosilicate Salt, and / or silicone SG is spin-coated on the hardened TEOS wafer and hardened. The thickness of the selected S0g type and S0G coating depends on the desired flattening Alternatively, if necessary, the 'dielectric stack can be completed by CVD TEOS oxide deposition, or else the SOG can be left as the final layer in the interlayer dielectric stack .: Ultra-thin gate gasification formation In the presence of oxygen, at a pressure of about 10 to about 200 mTorr and about 25〇.〇 / ja degrees ^, the polycrystalline $ evening crystal. Exposure to the electron beam processing conditions of Example 15 continued for a period of time sufficient to grow the desired oxide thickness. The result is a uniformly dense and homogeneous film that is suitable for further processing required for microelectronic applications. -33- This paper standard it uses the Hi] home standard (CNS) A4 specification (21Qx 297 official approving clothes-(please read the notes on the back ^,-'don't write this page),-= 5

Claims (1)

2 4. 6. Printed by the Consumer Cooperative of the Ministry of Light Industry of the Ministry of Light Industry 7. • A method of curing a dielectric material on a substrate ⑷ applying a dielectric material to the surface of the substrate: Wanfa and Including: (b) The material is exposed to electron beam radiation under conditions sufficient to harden the dielectric material into a film. , Zhuo a 1 According to the method of claim 1 of the scope of patent application, acid salts, phosphosilicates, siloxane compounds are made. According to the method of item 2 of the patent application scope, before the electron beam radiation, 'Tu Shicheng, children's silicones are two ears: Ma Zun, with an organic group from about 2% to about 90%, = organic The group contains from then to about 10 secondary groups, the aromatic group with from about 0 carbons to the group has from about 4 to about 10 hard lipid groups, and mixtures thereof. According to the method of patent application No. H, where the dielectric material ranges from &apos;. Spoon 2: &gt; C to about 400. (: It is hardened at a temperature. According to the method of item 丨 of the patent application range, the dielectric material is hardened under a pressure of from about 100 mTorr to about 200 mTorr. According to the patent application The method of item 丨, wherein the substrate is exposed to electron beam radiation in the presence of a gas selected from the group consisting of oxygen, argon, nitrogen, helium, and mixtures thereof-a species coated with at least one layer according to patent application scope i Substrate of the film of the item. A microelectronic device containing a substrate according to item 7 of the patent application in which the dielectric material is made of phosphorosiloxanes and in which the dielectric material is exposed ^ ---- \ 碕 先READ |? »-Back [&lt;. Precautions Yan Yi ^) Order t -------34-The standard of the paper standard (CNS" A4 secret (210 to 297 public) A8 B8 C8 'D8 Patent application scope == Method of annealing a substrate coated with chemical vapor deposition material, the 丨 :): The chemical vapor deposition material is applied to the surface of the substrate; and sufficient conditions to anneal the chemical vapor deposition material into a film Below, the chemical vapor deposition material is exposed to electron beam radiation. 10. · According to the 9th method of patent application, the 80,000 method, in which the chemical vapor deposition: t-strontium strengthened tetraethyl orthosilicate oxonate, shixi burned oxides' boron silicate glass, phosphorus Silicate glass, nitride, anhydrous film, oxygenated compound, frit glass made of tetraethyl n- (iv), or a mixture thereof. Η. The method according to item 9 of the patent application scope, wherein the chemical gas phase The deposited material is applied to the mixture of ‘eye mesh ethyl orthostone Xi’ salt and oxygen or gas, Shi Xiyaki, and optionally a mixture of <-borane, phosphane, and nitrous oxide. Substrate. 12. A substrate coated with at least one layer of the film according to item 9 of the patent application. 13. A microelectronic device containing a substrate according to item 丨 2 of the patent application scope. 14_ A method of growing an ultra-thin film oxide or nitride on a substrate, the method comprising: in the presence of a material in a gaseous state, and under conditions sufficient to ionize the material and promote oxidation or nitridation reactions on the surface of the substrate Next, expose one surface of the substrate to electron beam radiation &gt; 15. According to the patent application No. 1! The method of item 4, in which the substrate is made of a piece of paper, and the Chinese national standard (CNS) A4 is used (210 X 297 Gongdong) ^-1 '(please read the precautions on the back side first) W) Printed by the Ministry of Economics, Central Standard Falcon Bureau, Unemployment Consumer Cooperative-35- Shenshi's patent scope is made of 16 gallium or silicon. According to the method of item 14 in the scope of the application of the 5th patent, among them, the product and the goods are dry. The co-drying sapwood contains gas and sub-gas, and the reaction product or mixture is coated with at least one substrate 18′-containing A microelectronic device based on the substrate of claim 17 of the patent application. 1 Gen According to the method of item 1 of the patent application scope, where the substrate is a silicon wafer --- Mount II Please read the back first, -C-Notes-? ~, Write this page) .II— · The oxygen, ammonia, ^, and oxygen layers in the sublimated solid or vaporized liquid type are printed according to the 17-1T film of the patent application item 14 of the patent scope. 36-This paper size is suitable for China National Standard (CNS) A4 specification (2 丨 0X297mm)