經濟部中央標準局貝工消費合作社印製 A7 B7 五、發明説明（1 ) 發明背景 本發明係關於一種用於一半導體裝置之光罩，其有肋於 在半導體製造期間*測量一圖型化線的寬度。 習知前案的敘述 為於晶圖上形成一預設圖型，通常利用一石版印刷 (lithography)製程。其準確性由測量圖型化線之寬度而 決定。 為能更了解本發明之背景，現Μ圖1A至1C說明一傳統上 以石版印刷形成一圖型的製程。 首先，在晶圖1上形成某厚度之聚矽膜2 *該膜在稍後 的製程中成型（patterned)，其上並覆Κ 一光阻膜3 ，接 著，Μ —厚度為Xm，具有預設圖型的光罩4使該膜3曝露 於一光源下，如圖1 A所示。 接下來以一顯影製程將暘茈於光下的光敏膜去除•而顯 影出厚度為Xp的光敏膜圖型3’，如圖1B所示。 最後Μ該光敏膜圖型3’作為一蝕刻光罩，K蝕刻之聚矽 膜2 ，而形成厚度為Xe的聚矽膜圖型2’，如圖1C所示。 經過上述製程，即可得出光罩的鉻圖型寬度與光敏膜的 匾型3’寬度之差Xn-Xp 。此外·同樣地，該光罩的絡圖型 寬和經蝕刻罩Μ該光敏膜而蝕刻聚矽膜後形成的圖型寬度 之差Xm-Xe亦會產生。前者之差稱為光石版印刷 (photolithography)的偏差，而後者則稱為蝕刻之偏差。 上述與光罩圖型之差係視輻射能量的變化和蝕刻氣體的種 類而定。 -4- 本紙張尺度適用中國國家揉準（CNS ) A4规格（210X297公釐） I 10¾ I (請先閱讀背面之注意事項再填寫本頁) 訂 線 經濟部中央橾準局員工消费合作杜印製 荦H 05323號專利申請茱 ^ 中文說明書修正頁（名5年9月> ^ j 7 1 ：； ,Ιί ------·«------ 五、發明説明（>) 為测最光敏瞑圈型内和其他經由光敏膜画型所形成的其 他圖型之嫌寬（上述兩者之寬度皆不同於光罩之路圖型的 鸾度），通常使用一種掃描霣子顯微鏑（K下稱”SEM”）（一 禰捆最精確尺寸，以下稱為” CD”，之裝置）。 但是，使用SEM在一晶圖片上測量CD平均約需5小時 1〇分鏞，更糟地是•因為澜量配備會損埭光敏膜’故而通 常_測得精確。 發明概述 因此，本發明之一目的在克眼習知裝置所遭遇的上述問 靆，並提供一種能Μ簡單和安全的方法測量光敏_圖型之 線寬的光罩。 梅據本發明，上述目的可由提供一用Μ澜量半専體元件 線寬的光蓽而完成*其包含：第一_肋型部份，其中配 置有多侗分開設置的第一鞴肋圈型*該輔肋型與欲最測 的主鵂圖型之線寬相同；和設置於該第一輔肋圔型部份下 方之第二輔肋圈型部份，其中配置Μ多個與該第一_肋圖 型相同埭寬之分開設置的第二輔助圈型，其配置方法使其 與第一輔肋圓型相距不一，該第二輔助圖型至少之一的一 脚與第一輔肋_梨之一的一側相符。 «式之概述 太發明之上述目的和其他優點可由本發明之較佳霣施例 的詳捆說明和所附麵式而更為明顏，其中： _1Α至1C之截面示意臞乃例示一使用傅統光罩的石版印 刷術製程； …- ___- 5 ~ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） ---------1 '裝------訂 ~ ^ (請先閱讀背面之注意事項再填寫本頁) 免8 31 Ο 5 3 2 3號專利申請菜 中文銳明書修正頁（85年9月> Α7 Β7 ^ H-1 p ic r，補充 五、 發明説明（ 經濟部中央標準局員工消費合作杜印製 _ 2顯示根 阐3A至3(:之 於—晶圓上之 發明之詳细 Μ下，本發 符號各表示相 謫先參考圚 叻鬮塑，以肋 上部群姐2 0中 叻_型Κ相距 群組30中之輔 群組的輔肋圈 型之間距C 。 十分接近。 此外，上部 梨1 0 ’輿欲形 根撺本發明 輔肋圖型10， 更深入看輔肋 ” 0”的匾域上 群姐的輔肋圔 一垂直例在檷 10 ’之垂直惻 撺本發明 平面示意 輞肋圈型 敘述 明之較佳 似之姐件 2 ，該画 於測量線 或是下部 常數距讎 肋圖型則 型之間距 為考慮一 ，具有輔肋園型配置之光罩钃； 圖顬示多姐利甩圖2之光罩而顯影 圈。 貢施例將Μ附画解釋之，相似參考 〇 顬示設於一光運的預設匾域上之輔 寬。如圖所示，該輔助圈型可配置 群姐30中，在該上部群姐20中，輔 Α而平行配置。相反地，位於下部 Μ常數距離C而平行配置。該上部 Α之設計不同於下部群姐的_肋_ 步進器的解析能力·此兩群姐距黻 群姐20的輔肋匾型10與下部群姐30的輔肋圖 成於一晶粒上之函型具相同的線寬。 的光罩上，形成有檷記圖型40,以鑑別每個 10，的配置順序，如圓2之數宇所顧示者， 画型10，10’間的配置闢係可知在標記圖型 ，上部群姐的輔助圈型10—側之配置與下部 型10’ 一側對齊，如此使上部_肋國型1〇的 記_型的+1和-1區域時，輿下部輔肋圈型 分開Δχ *在+2和-2®域上分開2Δχ，等等 --------,-裝------訂-----η 球 (請先閱讀背面之注意事項再填寫本頁) 6_ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 五、發明説明（0) Α7 Β7 ή μ1 現參考圖3A至3C所示，該圈顯示利用圈2之光罩而Μ刻 線形成之多姐圖型。 圖3 Α顯示輔助匾型之配置圖，該圖型在當與光罩具相同 線寬的圖型形成時產生*此時只有K顯微鏡才能確定上部 輔肋圓型11的一側在檷記圖型40的區域”0”處與下部輔助 圖型11’之一側相符。因此，很容易可辨認出光罩的圖型 與晶圓上所形成的圖型無異。 _3B顯示上部輔肋圖型11和下部輔肋圖型11'間之對齊 係發生於該檷記圖型40的區域”0”之左手側，即區域 ”-1”上。此時，可知晶囫上所形成之圖型較光罩之圖型為 鸾。換句話說，由於區域”-1”上相符之故，形成於晶圓上 之圓型線寬為Δχ *大於光罩的圖型線寬。 _3C顯示上部輔肋圖型11與下部轄肋圖型11’間之相符 經濟部中央標準局員工消費合作社印製 上之圈 習為腌範 域成之 於因實及 區形成 對，些神 個所形 例此這精 二上所 施因而之 第圓上 實。故請 的晶圓 和知，申 邊一晶 點可述和 手知，。優顯描述 右可說小的明實描 之，地為明為詳所 "時细寬發後地明 "0此詳線本容能發 域。。型之内可本 區上窄圖示述儘離 的2"為罩揭上已脫 40"+型光所過例不 _型域圖較處譎施當 Η區之，此在實改 記在上 士定修 檷說罩2Δ述\特和 於是光為所之的化 生就較寬上蕤明變 發也塑線如此發之 。 係，圖型 於本例_ --------r 袭------1Τ------, $ (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0'〆297公釐）A7 B7 printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (1) Background of the invention The present invention relates to a photomask for a semiconductor device, which is ribbed to measure a pattern during semiconductor manufacturing The width of the line. The description of the prior art case is to form a predetermined pattern on the crystal map, usually using a lithography process. Its accuracy is determined by measuring the width of the patterned line. To better understand the background of the present invention, FIGS. 1A to 1C illustrate a process of forming a pattern by lithography. First, a polysilicon film 2 of a certain thickness is formed on the crystal pattern 1 * This film is patterned in a later process, and it is coated with a photoresist film 3, and then, M—thickness is Xm, with a pre Set a patterned photomask 4 to expose the film 3 to a light source, as shown in FIG. 1A. Next, the photosensitive film exposed to light is removed by a developing process, and a photosensitive film pattern 3 'with a thickness of Xp is displayed, as shown in FIG. 1B. Finally, the photosensitive film pattern 3 'serves as an etch mask, K-etched polysilicon film 2 to form a polysilicon film pattern 2' with a thickness of Xe, as shown in FIG. 1C. Through the above process, the difference Xn-Xp between the width of the chrome pattern of the photomask and the width of the plaque 3 'of the photosensitive film can be obtained. In addition, similarly, a difference Xm-Xe between the pattern width of the photomask and the pattern width formed by etching the polysilicon film through the etching mask M and the photosensitive film will also occur. The difference between the former is called the deviation of photolithography, and the latter is called the deviation of etching. The difference between the above and the reticle pattern depends on the change in radiant energy and the type of etching gas. -4- This paper scale applies to China National Standard (CNS) A4 (210X297mm) I 10¾ I (please read the precautions on the back and then fill out this page). Co-ordination of employees of the Ministry of Economic Affairs, Central Bureau of Prospects Patent application No. H 05323 Zhu ^ Chinese specification amendment page (name 5 years September> ^ j 7 1:; Ιί ------ · «------ V. Description of invention (> ) In order to measure the suspicion width of the other patterns formed by the most sensitive photocircle pattern and other patterns formed by the photosensitive film (the width of the above two are different from the entanglement of the pattern of the photomask road), usually a scanning dip Submicroscopic dysprosium (hereinafter referred to as "SEM") (the most accurate size of a bundle, hereinafter referred to as "CD", the device). However, it takes an average of about 5 hours and 10 minutes to measure CD on a single crystal picture using SEM Yung, worse is that because the amount of equipment will damage the photosensitive film, it is usually accurate to measure. SUMMARY OF THE INVENTION Therefore, one of the purposes of the present invention is to overcome the above-mentioned problems encountered by the conventional device, and provide a Μ Simple and safe method to measure the photomask of the line width of photosensitive_pattern. This can be accomplished by providing a photonic device with a line width of half the size of the element * It includes: a first rib type part, in which a first rib ring type with a plurality of separate sets is arranged * the auxiliary rib type and The line width of the main pattern to be measured is the same; and the second auxiliary rib ring-shaped portion provided below the first auxiliary rib-shaped portion, in which a plurality of configurations are the same as the first rib pattern The width of the second auxiliary ring type is set separately, and its configuration method makes it different from the first auxiliary rib round type, at least one leg of the second auxiliary pattern is the first auxiliary rib_pear one One side matches. «Summary of the formula The above objects and other advantages of the invention are more apparent from the detailed description of the preferred embodiment of the present invention and the attached surface, where: _1Α to 1C cross-section Illustrate a lithography process using Fu Tong mask;…-___- 5 ~ This paper scale is applicable to China National Standard (CNS) Α4 specification (210X 297 mm) --------- 1 'installed --- --- Subscribe ~ ^ (Please read the precautions on the back before filling in this page) Exempt 8 31 Ο 5 3 2 No. 3 Patent Application Dish Chinese Ruiming Book Amendment Page (8 September 5 > Α7 Β7 ^ H-1 p ic r, Supplement V. Description of the invention (The Central Government Bureau of Economic Affairs Employee Consumption Cooperation Du Printed _ 2 shows root interpretation 3A to 3 (: for-on the wafer Under the detailed description of the invention, each symbol in this hair symbol indicates that the reference is made first, and the distance between the auxiliary ribs of the auxiliary ribs in the auxiliary group in the group 30 of the upper ribs is 20. It is very close. In addition, the upper pear 1 0's desire shape roots the auxiliary rib pattern 10 of the present invention, a deeper look at the auxiliary rib on the plaque field of the auxiliary rib "0" is a vertical example of the vertical rib on the 10 " Vertical 撻 撺 The flat schematic rim ring type description of the present invention is better described as the sister part 2, which is drawn on the measurement line or the lower constant distance rib pattern. The distance between the types is considered one, with a secondary rib configuration Mask 钃; The picture shows Duo Jieli throwing the mask of Figure 2 and developing the circle. Gong Shi explained the attached picture of M, similar to the reference. The auxiliary width set on the preset plaque field of Yi Guang Yun. As shown in the figure, the auxiliary circle type can be arranged in the group sister 30, and in the upper group sister 20, auxiliary A is arranged in parallel. Conversely, they are located in parallel at a constant distance C in the lower part. The design of the upper Α is different from the resolution ability of the lower group sister's _rib_ stepper.The two group sisters are separated from the auxiliary rib plaque 10 of the black group sister 20 and the auxiliary rib of the lower group sister 30 into a single grain. The above function has the same line width. A mask pattern 40 is formed on the reticle to identify the arrangement order of each 10, as shown by the number 2 of circle 2, the arrangement between the patterns 10 and 10 'can be seen in the marked pattern , The configuration of the auxiliary group 10 side of the upper group sister is aligned with the side of the lower type 10 ', so that when the +1 and -1 regions of the upper _rib country type 10 are marked, the lower auxiliary rib type Separate Δχ * Separate 2Δχ on the +2 and -2® fields, etc. --------,-install ------ order ----- η ball (please read the notes on the back first (Fill in this page again) 6_ This paper scale is applicable to the Chinese National Standard (CNS) Α4 specification (210X297 mm) 5. Description of the invention (0) Α7 Β7 ή μ1 Now refer to Figures 3A to 3C, the circle shows the use of circle 2 Multi-sister pattern formed by reticle and M engraved line. Figure 3 Α shows the configuration of the auxiliary plaque, which is generated when a pattern with the same line width as the mask is formed * At this time, only the K microscope can determine that the side of the upper auxiliary rib circular shape 11 is in the picture map The area "0" of the pattern 40 corresponds to one side of the lower auxiliary pattern 11 '. Therefore, it is easy to recognize that the pattern of the photomask is the same as the pattern formed on the wafer. _3B shows that the alignment between the upper auxiliary rib pattern 11 and the lower auxiliary rib pattern 11 'occurs on the left-hand side of the area "0" of the Pianji pattern 40, that is, on the area "-1". At this time, it can be seen that the pattern formed on the crystal embankment is Luan than that of the photomask. In other words, due to the coincidence in the area "-1", the circular line width formed on the wafer is Δχ * larger than the pattern line width of the photomask. _3C shows the correspondence between the upper auxiliary rib pattern 11 and the lower jurisdiction rib pattern 11 '. The circle printed on the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economics is that the imagination is due to the facts and the formation of pairs. This is the first circle on the second form of reality. Therefore, the wafer and knowledge of the application, the one crystal point of Shen Bian can be described and known. You Xian description You can say a small description on the right, the ground is clear and detailed. "When the hair is thin and wide, the ground is clear". 0 This detailed line can be used to develop the domain. . Within the model, the narrow icon in this area can be described as 2 " The cover has been taken off 40 " + type light has not been used. The type domain map is more arbitrarily applied as the H area. The sergeant Xiu Xiu said that the cover is 2Δnar \ tehe, so the metamorphosis of the light is wider, and the hair is changed and the hair is made like this. Department, the figure is in this example _ -------- r 袭 ------ 1Τ ------, $ (please read the precautions on the back before filling this page) This paper size is applicable China National Standard (CNS) A4 specification (2 丨 0'〆297mm)