TW300307B - Customizable integrated circuit device - Google Patents

Customizable integrated circuit device Download PDF

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Publication number
TW300307B
TW300307B TW085107129A TW85107129A TW300307B TW 300307 B TW300307 B TW 300307B TW 085107129 A TW085107129 A TW 085107129A TW 85107129 A TW85107129 A TW 85107129A TW 300307 B TW300307 B TW 300307B
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customer
customizable
memory
customize
item
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TW085107129A
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Chinese (zh)
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Rotem Eran
Yoeli Uzi
Stephen Phillips Richard
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Chip Express Israel Ltd
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Priority claimed from IL11679296A external-priority patent/IL116792A/en
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Abstract

A customizable gate array device including a customizable gate array portion and a customizable memory portion.

Description

I A7 B7 五、發明説明(1) 發明領域 本發明係有關於一般客户可定製的積體電路裝置。 發明之背景 隨機存取記憶體(_)爲複雜電子電路中極重要的組件。今 日兩種主要的RAM爲:靜態RAM,其中寫入的數據長時間保留, 另一爲動態RAM,其密度較大,但不長期保留寫入數據,因此必 需周期性更新。 數據經埠口從RAM中寫入及讀取。單埠口 RAM只有一埠口, 因此在任何時間於單埠口 RAM晶胞中只能進行讀或寫中的一項操 作。在多種情況下,必需同時讀寫(或應用不同的時脈速度) ,因此需要使用雙埠口RAM。一典型的雙埠口RAM爲一快速CPU及 慢速裝置中進行一缓衝。CPU應用一速度(快或同步)對RAM讀 寫,再以另一速度(慢或同步)對RAM讀寫。亦存在N埠口RAM設 計,其中某些埠口只用於讀或寫,而某些埠口同時進行讀寫。 閘極陣列爲設計成客户可定製的積體電路,基本上,閘 極陣列的下(通常爲8 )層必須標準化,且形成電晶體陣列 (或陣列)。一閘極陣列的上(通常爲)層爲互連層,其形 成電晶體(閘極)層間的互連結。因爲只有互連結層必需爲 客户可定製,以使客户可定製作閘極陣列,當電路製造數少 ,以調整一新積體電路的費用,基本上使用閘極陣列。因爲 今曰大部份的電子系統包含某一實質量的RAM,通常使用 閘極陣列的系統設計者在其設計中使用多個RAM積 -3 — 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製I A7 B7 5. Description of the invention (1) Field of the invention The present invention relates to an integrated circuit device that can be customized by general customers. BACKGROUND OF THE INVENTION Random access memory (_) is a very important component in complex electronic circuits. Today, the two main types of RAM are: static RAM, where written data is retained for a long time, and the other is dynamic RAM, which has a higher density, but does not retain written data for a long time, so it must be periodically updated. Data is written and read from RAM via port. The port RAM has only one port, so only one operation of read or write can be performed in the RAM cell of the port at any time. In many cases, it is necessary to read and write at the same time (or apply different clock speeds), so dual-port RAM is required. A typical dual-port RAM is a fast CPU and a buffer for slow devices. The CPU should read and write RAM at one speed (fast or synchronous), and then read and write RAM at another speed (slow or synchronous). There are also N-port RAM designs, some of which are only used for reading or writing, while some are reading and writing at the same time. The gate array is an integrated circuit designed to be customized by the customer. Basically, the lower (usually 8) layer of the gate array must be standardized and a transistor array (or array) must be formed. The upper (usually) layer of a gate array is the interconnect layer, which forms the interconnect junction between the transistor (gate) layers. Because only the interconnect junction layer must be customized for the customer, so that the customer can customize the gate array. When the number of circuits is small, to adjust the cost of a new integrated circuit, the gate array is basically used. Because most electronic systems today include a certain amount of RAM, system designers who use gate arrays usually use multiple RAM products in their designs. 3-This paper standard applies to China National Standard (CNS) A4 specifications (210X297mm) (Please read the precautions on the back before filling in this page) Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs

經濟部中央標準局員工消費合作社印製 體電路。當如果需使用特殊類型的RAM ,或無法使用分開 的RAM積體電路時,則有多種處理方法。 第種且最不具效率的方法是使用本身可產生晶片的 _的閘極陣列之閘極。此方法相當浪費,因爲在閘極陣 列中的閘極基本上相當大,而記憶體晶胞基本上則很小。 第二種方法是在閘極陣列上提供未定形態之記憶體。 此方法的王要缺點爲很難事先知道記憶體的準確形態及大 小’其爲客户可定製裝置所必要知道者。 第二種解決方法是提供兩個各包含閘極的小電晶體, 因此可由使用適當的客户化設計,各閘極可轉換成小的記 憶體晶胞。因爲加入的電晶體相當小,對各晶胞所增加的 尺寸有限。 當需重覆存取固定數據時,R〇M特別有用。R〇M一般比 RAM密。美國專利5,3 1 1,46 4説明一從RAM晶胞中形成r〇m晶 胞的半導體記憶體晶胞。其中提供電路保證在電源切開 前,該寫入RAM的數據可保證提供—R〇M型式之功能。 發明概述 本發明之目的在於提供一改良之積想電路裝置。 因此依據本發明的較佳實施例,本發明提供一客户可 定製問極陣列裝置’其包含一客户可定1閉m部份及 二客户可定製記憶體部份。 最好’該客户可定製記憶體部份包含多個相同的記憶 本紙張尺度適用中國國家標準(CNS > A4规格(210X297公釐) (請先W請背面之注$項再填寫本頁) 訂 ^ 經濟部中央標準局員工消費合作杜印製 A7 B7 五、發明説明(3) 、晶胞及客户可定製記憶體晶胞連結,可使多個相同的記 憶體晶胞的功能可選擇爲一 RAM或一 ROM。 ,另外,客户可定製記憶體部份包含多個相同的記憶體 晶胞及客户可定製記憶體晶胞連結,使多個相同的記憶體 晶胞可經由多個可選擇的埠口數加以啓動。 最好,客户可定製虬極陣列解碼器包含客户可定製記 憶體晶胞連結,使多個相同的記憶體晶胞之功能可選擇爲 一 RAM或一ROM。 依據本發明的較佳實施例,其中亦部份一客户可定製 記憶體解碼器,其包含多個相同的記憶體晶胞,及客户可 定製記憶體連結,其可使多個相同的記憶體晶胞的功能可 加以選擇爲一或多個記憶體單元。 最好,該一或多個記憶體單元包含多個相同形式的記 憶體單元,多個不同形式的記憶體單元,多個相同尺寸的 記憶體單元,或多個不同尺寸的記憶體單元。 另外,依據本發明的較佳實施例,其亦提供二客户可 定製記憶體裝置,該裝置包含多個相同的記憶體晶胞,及 客户可定製晶胞連結,使得該多個相同的記憶體晶胞的功 能可選擇爲一 RAM或一 ROM。 在本發明的較佳實施例中提供一客户可定製記憶體解 碼器,其包含多個相同的記憶體晶胞及客户可定製記憶體 晶胞,可使多個相同的記憶體晶胞經多個數位可選擇的辞· 口啓動。 最好,客户可定製記憶體裝置亦包含客户可定製記憶 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -------------- (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作杜印製 A7 B7 五、發明説明(4) 體晶胞連結,使多個相同的記憶體晶胞的功能可選擇爲一 RAM或一 ROM 〇 最好,客户可定製記憶體部份包含一上至第一金屬層 的CMOS結構,且亦外第_金屬層,及在該第一金屬層上的 客户可定製之至少第二及第三金屬層。 依據本發明的較佳實施例,該客户可定製之第三及第 二金屬層包含在該金屬晶胞上形成的客户可定製連結。 依據本發明的較佳實施例,客户可定製記憶體部份爲 客户可定製之雷射。 最好’客户可定製閘極陣列部份爲客户可定製記憶體 部份均可爲客户以相同技術製造。 依據本發明的較佳實施例,客户可定製閘極陣列部份 及客户可定製記憶體部份均爲客户可定製之雷射。 最好’客户可定製閘極陣列部份及客户可定製記憶體 部份均可爲客户由客户可定製連結之蝕刻製造。 依據本發明的較佳實施例,客户可定製第二及第三金 屬層包含提供選擇連結之客户可訂定形態的金屬層。 最好’客户可定製記憶體部份包含至少兩個提供選擇 連結之客户可訂定形態之金屬層。 依據本發明的較佳實施例,客户可定製閘極陣列部份 及客户可定製記憶體部份均包含至少兩個提供選擇連結之 客户可訂定形態的金屬層。 最好,客户可定製記憶體包含至少—個客户可定製解 碼器且客户可定製記憶體包含至少一個客户可定製數據介 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公董) ----------^ ^------1T------1 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A7 —_-___B7 ___ 五、發明説明(5) 面。 依據本發明的較佳實施例,客户玎定製解碼器含兩位 址埠口,且组成兩獨立操作之解碼器部份,各部份從0開 始計數’且與兩位址卑口之一相關。 產生及客户製造客户可定製之積體電路裝置的方法由 本發明的較佳實施例提供圖形簡述 圖式之簡要説明 可由下文中的詳細説明及附圖瞭解本發明: \^圈1爲依據本發明的較佳實施例架構及操作的客户可 定製閘極陣列裝置之簡化説明; 圖2爲依據本發明的較佳實施例架構及操作的客户可 定製製RAM裝置之簡化説明; V揭3爲圖1或2中裝置之客户可定製記憶體部份的簡化 説明。 \^4A,4B及4C爲圖3之電路的客户可定製部份之簡化 説明,該電路包含一記憶體晶胞之客户可定製陣列,及客 户可定製解碼器部份; X/fe 5A及5B形成對應圖4A之電路的較佳連結,其中圖5』 爲一上至第一金屬層之非客户可定製(^〇3結構之佈局的簡 化説明,且包含該第一金屬層,且圖5B爲在5A所示結構上 形成的客户可定製第二及第三金屬層之佈局的簡化説明, 該結構包含在記憶體晶胞的主動區上形成客户可定製連锋 本紙張尺度逋用中國國家標準(CNS ) A4规格(210X297公釐> ' ------ ----------^^-------1T^ (請先閲讀背面之注項再填寫本頁) 經濟部中央揉準局員X消費合作社印製 A7 ' B7 五、發明説明(6 ) 〇 vy窗6A及6B共同形成一對應圖4B或4C之電路的較佳佈局 ,其中圖6A爲一上至第一金屬層之非客户可定製⑽的架構 的佈局之簡化説明,且包含該第一金屬層,且圖6B爲客户 可定製第二及第三金屬層的佈局,其形成於圖6A所示之結 構上,且包含客户可定製連結; 1肩7A,7B及7C爲圖4A,4B及4G的簡化説明,其可客户 可定製以提供4字元2位元單埠口 RAM; \/圖8爲圖5B佈局之説明,其後爲一客户可定製部份, 係由雷射切除,蝕刻,或客户可定製金屬沉積以產生_二 字元X 2位元的單埠口 RAM: ^周9 A及9 B爲圖6B佈局之説明,其後爲一客户可定製部 份,係由雷射切除,蝕刻,或客户可定製金屬沉積以產生 一對應相對的之圖4B及4C之電路之4字元X 2位元單蜂口 RAM之解碼器部份; V*^10A,10B及10G爲相對的圖4A,4B及4C之部份的簡 化説明,其爲客户可定製,以提供兩個2字元X 2位元單 埠口 RAM : 1 1爲圖5B佈局之説明,其後爲一客户可定製部份, 係由雷射切除,蝕刻,或客户可定製金屬沉積以產生兩個 2字元X 2位元的單埠口 RAM ; 12A及12B爲圖6B佈局之説明,其後爲—客户可 j 部份,係由雷射切除,蝕刻,或客户可定製金凰 二句况積以產 生一對應相對的之圖4B及4G之電路之兩個2字开v。 厂4 X 2位元 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐> ' —--- (請先閲讀背面之注意事項再填寫本頁) .衣. 訂 經濟部中央標準局員工消費合作社印製 Λ / Β7 五、發明説明(7) 單埠口 RAM之解碼器部份; U®13A,13B及13C爲相對的圖4A,48及4〇之部份的簡 化説明,其爲客户可定製,以提供兩個2字元χ i位元雙 埠口 RAM : I圖14爲圖5B佈局之説明,其後爲一客户可定製部份, 係由雷射切除,蝕刻,或客户可定製金屬沉積以產生兩個 2字元X 1位元的雙埠口 ram;The printed circuit of the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. When a special type of RAM is required, or when a separate RAM integrated circuit cannot be used, there are various processing methods. The first and least efficient method is to use the gates of the gate array that can generate the chip itself. This method is quite wasteful because the gate in the gate array is basically quite large, while the memory cell is basically small. The second method is to provide memory of undetermined shape on the gate array. The main disadvantage of this method is that it is difficult to know the exact shape and size of the memory in advance, which is necessary for the customer to customize the device. The second solution is to provide two small transistors each containing a gate, so that by using an appropriate custom design, each gate can be converted into a small memory cell. Because the added transistors are quite small, the size added to each unit cell is limited. ROM is particularly useful when you need to repeatedly access fixed data. R〇M is generally denser than RAM. U.S. Patent 5,3 1 1,46 4 describes a semiconductor memory cell in which a RAM cell is formed from a RAM cell. The provided circuit guarantees that the data written into the RAM can provide the function of -R〇M type before the power is turned off. SUMMARY OF THE INVENTION The object of the present invention is to provide an improved integrated circuit device. Therefore, according to the preferred embodiment of the present invention, the present invention provides a customer-customizable array array, which includes a customer-definable 1-m section and two customer-customizable memory sections. It is best that the customer's customizable memory section contains multiple identical memory books. The paper size is applicable to the Chinese national standard (CNS > A4 specification (210X297mm) (please fill in this item on the back first and then fill in this page ) Order ^ A7 B7 printed by the consumer cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs V. Description of the invention (3), the unit cell and the customer can customize the memory unit cell connection, so that the function of multiple same memory unit cells can be Choose between a RAM or a ROM. In addition, the customer-customizable memory section contains multiple identical memory cells and the customer-customizable memory cells are connected so that multiple identical memory cells can be accessed via Multiple selectable port numbers are activated. Preferably, the customer-definable gate array decoder includes customer-specific memory cell links, so that the function of multiple identical memory cells can be selected as a RAM Or a ROM. According to a preferred embodiment of the present invention, there is also a part of a customer-customizable memory decoder, which includes multiple identical memory cells, and a customer-customizable memory link, which enables The work of multiple identical memory cells It can be selected as one or more memory units. Preferably, the one or more memory units include a plurality of memory units of the same form, a plurality of memory units of different forms, and a plurality of memory units of the same size , Or multiple memory units of different sizes. In addition, according to the preferred embodiment of the present invention, it also provides two customer-customizable memory devices, the device includes multiple identical memory cells, and the customer can be customized The unit cell is connected so that the functions of the plurality of identical memory cells can be selected as a RAM or a ROM. In a preferred embodiment of the present invention, a customizable memory decoder is provided, which includes multiple The same memory cell and the customer can customize the memory cell, so that multiple identical memory cells can be activated through multiple digitally selectable ports. Preferably, the customer-customizable memory device also includes Customers can customize the memory of this paper. The standard of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) -------------- (please read the precautions on the back before filling this page). Employees at the Central Bureau of Standards of the Ministry of Economic Affairs Consumer Cooperation Du Printed A7 B7 V. Description of the invention (4) Body cell connection, so that the function of multiple same memory cells can be selected as a RAM or a ROM. The best, customers can customize the memory part It includes a CMOS structure up to the first metal layer, and also the second metal layer, and at least the second and third metal layers that can be customized by the customer on the first metal layer. For example, the customer-customizable third and second metal layers include customer-customizable links formed on the metal cell. According to a preferred embodiment of the present invention, the customer-customizable memory portion is customer-customizable. Customized laser. It is best to customize the gate array for the customer. The memory for the customer can be customized with the same technology. According to the preferred embodiment of the present invention, the customer-customizable gate array portion and the customer-customizable memory portion are customer-customizable lasers. The best 'customer-customizable gate array part and customer-customizable memory part can be manufactured by customers by customer-customized etching. According to a preferred embodiment of the present invention, the customer-customizable second and third metal layers include customer-definable metal layers that provide selective connections. Preferably, the customer-customizable memory portion includes at least two customer-definable metal layers that provide optional connections. According to a preferred embodiment of the present invention, the customer-customizable gate array portion and the customer-customizable memory portion both include at least two customer-definable metal layers that provide selective connections. Preferably, the customer-customizable memory contains at least one customer-customizable decoder and the customer-customizable memory contains at least one customer-customizable data. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 Dong) ---------- ^ ^ ------ 1T ------ 1 (please read the precautions on the back before filling out this page) Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs System A7 —_-___ B7 ___ V. Description of invention (5). According to the preferred embodiment of the present invention, the custom decoder includes two address ports and constitutes two independently operated decoder parts, each part counting from 0 'and one of the two address ports. Related. A method of producing and manufacturing a customer-customizable integrated circuit device is provided by a preferred embodiment of the present invention. A brief description of the drawings is provided. A brief description of the drawings can be understood from the detailed description and drawings below: \ ^ 圈 1 为 为Simplified description of the customer-customizable gate array device for the architecture and operation of the preferred embodiment of the present invention; FIG. 2 is a simplified description of the customer-customizable RAM device for the architecture and operation of the preferred embodiment of the present invention; V Rev. 3 is a simplified illustration of the customizable memory portion of the device in FIG. 1 or 2. \ ^ 4A, 4B and 4C are simplified illustrations of the customer-customizable part of the circuit of FIG. 3, the circuit includes a customer-customizable array of memory cells, and the customer-customizable decoder part; X / fe 5A and 5B form a better connection corresponding to the circuit of FIG. 4A, where FIG. 5 is a non-customizable (^ 〇3 structure of the simplified structure of the first metal layer to the first metal layer, and includes the first metal 5B is a simplified illustration of the layout of the customer-customizable second and third metal layers formed on the structure shown in 5A. The structure includes the formation of customer-customizable combos on the active area of the memory cell This paper scale uses the Chinese National Standard (CNS) A4 specification (210X297mm> '------ ---------- ^^ ------- 1T ^ (please first Read the notes on the back and then fill out this page) A7 'B7 printed by the Consumers' Bureau of the Central Ministry of Economic Affairs X Consumer Cooperative V. Invention description (6) 〇vy windows 6A and 6B together form a circuit corresponding to Figure 4B or 4C. Layout, where FIG. 6A is a simplified illustration of the layout of a non-customizable architecture up to the first metal layer ⑽, and includes the first metal layer, and FIG. 6B is a customer Users can customize the layout of the second and third metal layers, which are formed on the structure shown in FIG. 6A, and include customer-customizable links; 1 shoulders 7A, 7B, and 7C are simplified illustrations of FIGS. 4A, 4B, and 4G , Which can be customized by the customer to provide 4 characters and 2 bits of RAM; \ / Figure 8 is the layout of Figure 5B, followed by a customizable part of the customer, which is laser cut and etched, Or the customer can customize the metal deposition to produce _ two characters X 2 bits of the port RAM: ^ Week 9 A and 9 B are the description of the layout of Figure 6B, followed by a customer customizable part, by Laser ablation, etching, or customers can customize metal deposition to produce a decoder part corresponding to the 4-character X 2-bit single-cell RAM of the corresponding circuit of Figure 4B and 4C; V * ^ 10A, 10B And 10G are relative simplified illustrations of parts of FIGS. 4A, 4B and 4C, which can be customized by the customer to provide two 2-character X 2-bit port RAMs: 1 1 is an illustration of the layout of FIG. 5B, This is followed by a customer-customizable part, which is laser-cut and etched, or the customer can customize metal deposition to produce two 2-character X 2-bit RAMs; 12A and 12B are layouts shown in Figure 6B. Of Ming, followed by-the customer can use the j part, which is cut off by laser, or etched, or the customer can customize the golden phoenix two product to produce a corresponding two-word opening of the corresponding circuit of Figure 4B and 4G v. Factory 4 X 2 digits paper size is applicable to China National Standard (CNS) Α4 specification (210Χ297 mm> '----- (please read the precautions on the back before filling this page). Clothing. Order Ministry of Economic Affairs Printed Λ / Β7 by the Staff Consumer Cooperative of the Central Bureau of Standards V. Description of the invention (7) Decoder part of the port RAM; U® 13A, 13B and 13C are relative simplifications of parts 4A, 48 and 40 Description, it can be customized by the customer to provide two 2-character χ i-bit dual-port RAM: I Figure 14 is the layout of Figure 5B, followed by a customer-customizable part, which is made by laser Removal, etching, or customers can customize metal deposition to produce two 2-character X 1-bit dual-port ram;

Njg15A及15B爲圖6B佈局之說明,其後爲一客户可定製 部份,係由雷射切除,蝕刻,哎坌 4客尸可定製金屬沉積以產 生一對應相對的之圖4B及4C之曾w、 心電路〈兩個2字元X1位元 雙埠口 RAM之解碼器部份: \|Ί6Α,16B及16G爲相對的圄 圖4A,4B及4C之部份的簡 化説明,其爲客户可定製,以提 设供兩個2字元X 2位元 ROM ; 1 7爲圖5B佈局之説明,其德&amp; ☆、 设爲一客尸可定製部份, 係由雷射切除,蝕刻,或客户可定 I金屬沉積以產生兩個 2字元X 2位元R〇M ; \^18八及188爲圖68佈局之說明,甘祕&amp; 叫乃,其後爲一客户可定掣 部份,係由雷射切除,蝕刻,或客 尸了定氣金屬沉積以產 生一對應相對的之圖4B及4C之電路夕占加0 ▲ 略又兩個2字元X 2位元 ROM之解碼器部份; NJII19A,19B 及 19G 爲相對的圖 4Α, 4A,48及代之部份的簡 化説明,其爲客户可定製,以提供 啤個Z字兀X 2位元單 埠口 RAM及兩個2字元X 2位元R〇M . 本紙張尺度適用中國國家橾準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 __B7 _ 五、發明説明(8 ) 20爲圖5B佈局之説明,其後爲一客户可定製部份, 係由雷射切除,蝕刻,或客户可定製金屬沉積以產生一 2 字元X 2位元單埠口 RAM及兩個2字元X 2位元ROM ; 2 1 A及圖21B爲圖6B佈局之説明,其後爲一客户可定 製部份,係由雷射切除,蝕刻,或客户可定製金屬沉積以 產生一對應相對的之圖4B及4C之電路之一 2字元X 2位元 單埠口 RAM及一 2字元X 2位元之解碼器部份; ^圖22A,22B及22G爲圖4A,4B及4C的簡化説明,其爲 客户可定製以提供一 2字元X 1位元R〇M,一 2字元X 1 位元單埠口 RAM,及一 2字元X 2位元單埠口 RAM; \y個23爲圖5B佈局之説明,其後爲一客户可定製部份, 係由雷射切除’蚀刻,或客户可定製金屬沉積以產生一 2 字元X 1位元ROM,一 2字元X i位元單埠口 RAM,及一 2 字元X 2位元單埠口 RAM,以及 V圖24A及24B示圖6B之佈局説明,其後爲一客户可定製 部份,係由雷射切除,蝕刻,或客户可定製金屬沉積以產 生對應至相對的的4B,4C電路之—單一解碼器,形成部份 的2字元Xi位元R0M,及一對解碼器,形成部份的2字元 X i位元單蜂口 RAM,及2字元χ 1位元單埠口 ram。 較佳實施例之詳細説明 現在請參考圖1’其爲依據本發明較佳實施例架構的 客户可定製閘極陣列裝置。圖1的閑極陣列基本上包名 本紙張尺度適用中國國家標準(CNS ) A4规格(210X297公釐) ----------^ :衣------ΐτ------η. (請先閲讀背面之注意事項再填寫本頁) 10- A7 B7 300307 五、發明説明(9 ) 個客户可定製記憶體區塊10,其與一客户可定製晶胞陣列 12相連結。最好在裝置的周团放置多個客户可定製輸入/ 輸出晶胞1 4 ° (請先閲讀背面之注意事項再填寫本頁} 客户可定製晶胞陣列12可適用於客户可定製輸出位址 V 叫 晶胞之位址,較佳實施例可見於本案受讓人所有的美國專 利案4,924,207: 4,875,971; 4,933,738; 5,049,969: 5 ,260, 597及5 ,111 ,273中申請專利範圍的一或多項。另外 ,客户可定製晶胞陣列12可包含相同多個輸入,功能可選 擇的邏輯晶胞陣列。如本案受讓人所有的美國專利申請案 08/290,550 ’ 標題爲 Customizable Logic ArrayNjg15A and 15B are illustrations of the layout of FIG. 6B, followed by a customer-customizable part, which is excised and etched by laser. Oops 4 guest corpses can be customized for metal deposition to produce a corresponding corresponding FIG. 4B and 4C Zeng w. Heart Circuit <Decoder part of two 2-character X1 bit dual-port RAM: \ | Ί6Α, 16B and 16G are simplified illustrations of the relative parts of FIGS. 4A, 4B and 4C. Can be customized for customers to provide two 2-character X 2-bit ROM; 17 is a description of the layout of Figure 5B, its morality & ☆, set as a customizable part of a guest, by Lei Laser ablation, etching, or customer can specify I metal deposition to produce two 2-character X 2-bit R〇M; \ ^ 18 eight and 188 for the description of the layout of Figure 68, Gan Mi &amp; call is followed by A customer can fix the part by laser cutting, etching, or depositing a fixed gas metal to produce a corresponding circuit corresponding to Figures 4B and 4C. Xi Zhanjia 0 ▲ Two more 2-character X The decoder part of the 2-bit ROM; NJII19A, 19B and 19G are simplified illustrations of the relative parts of Figures 4A, 4A, 48 and generations, which can be customized by the customer to provide a Z-word X 2bit RAM and two 2-character X 2bit R〇M. The paper size is applicable to China National Standard (CNS) A4 (210X297mm) (Please read the notes on the back before filling in this Page) Printed by the Employees Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs __B7 _ 5. Description of the invention (8) 20 is a description of the layout of FIG. 5B, followed by a customer-customizable part, which is laser cut and etched, Or the customer can customize the metal deposition to produce a 2-character X 2-bit Gigabit RAM and two 2-character X 2-bit ROM; 2 1 A and FIG. 21B are illustrations of the layout of FIG. 6B, followed by a The customer can customize the part by laser cutting, etching, or the customer can customize the metal deposition to produce a corresponding one of the circuits of Figures 4B and 4C 2 characters X 2 bits port RAM and a 2 characters X 2 bits decoder part; ^ Figures 22A, 22B and 22G are simplified illustrations of Figures 4A, 4B and 4C, which can be customized by the customer to provide a 2 characters X 1 bit R〇M , A 2-character X 1 bit port RAM, and a 2-character X 2 bit port RAM; \ y 个 23 is the layout of Figure 5B, followed by a customer-customizable part, system Laser ablation 'etching, or customers can customize metal deposition to produce a 2-character X 1 bit ROM, a 2-character X i-bit port RAM, and a 2-character X 2 bit port RAM, and V Figures 24A and 24B show the layout of Figure 6B, followed by a customer-customizable part, which is laser cut, etched, or customer-customizable metal deposition to produce the corresponding 4B, 4C circuit-a single decoder, forming part of the 2 character Xi bit R0M, and a pair of decoders, forming part of the 2 character X i bit single cell RAM, and 2 characters x 1 bit The port ram. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Now please refer to FIG. 1 ', which is a customer-customizable gate array device structured according to the preferred embodiment of the present invention. The idle pole array of Fig. 1 basically contains the name of the paper. The paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ---------- ^: clothing ------ Ιτ --- --- η. (Please read the precautions on the back before filling in this page) 10- A7 B7 300307 5. Description of the invention (9) Customer-customizable memory block 10, which can be customized with a customer The array 12 is connected. It is best to place multiple customer-customizable input / output cells 1 4 ° in the circumference of the device (please read the precautions on the back before filling this page) Customer-customizable cell array 12 can be applied to customer-customizable The output address V is the address of the unit cell. The preferred embodiment can be found in the US patents 4,924,207: 4,875,971; 4,933,738; 5,049,969: 5,260,597 and 5,111,273 which are all patent applications owned by the assignee of this case. One or more. In addition, the customer-customizable cell array 12 can contain the same multiple inputs and selectable logic cell arrays. For example, the US patent application 08 / 290,550 of the assignee of this case is entitled Customizable Logic Array

Device 〃。上述專利申請案併爲本文之參考。 記憶體區塊1 〇的尺寸及大小,在陣列彳2中的晶胞,及 輸入/輸出晶胞14可爲任何適用的數目及尺寸。 現請參考圖2,其爲依據本發明較佳實施例架構及操 作的客户可定製RAM裝置。最好圖2的裝置包含一客卢β 尸可定 製記憶體區塊2 0,其與圖1實施例之區塊彳〇相似。 供與的記憶體相關的一對客户可定製乂解碼器 c c 2 4 及— 經濟部中央樣準局員Η消費合作社印製 對客户可定製相對的解碼器26,28。 輪出 1 由相對的客户可定製介面3 4,3 6而使一對輸入 晶胞組30,32與對應的γ解碼器26,28耦合。須知益 出晶胞组30,32可輪替的併爲介面34,36之一部份 輸入晶胞組4 0,4 2與對應的解碼器2 2,2 4耦合。 依據本發明的較佳實施例,如下文中該更詳細 ,圖2的裝置提供不同款式及尺寸的記憶體,如 ’叫 _ ; 年埠R / 本紙張尺度適用中國國家樣率(〇^&gt;八视^(210乂297公釐) ~ 經濟部中央橾準局員Η消費合作社印製 A7 B7 五·、發明説明(10) ,或多個ROM,及一或多個之單或多埠RAM或上述组件之結 合。 在請參考圖3 ,其爲圖1或圖2之裝置的客户可定 製記憶體部份的簡化圖。由圖中可知當輸入/輪出晶胞消 除時,則圖3的電話與圖2相同。在圖3中,記憶體區瑰 以參考數字50指示,χ解碼器以對應參考數字52,54指示 ’且Υ解碼器以對應參考數字56,58指示,而客户可定製 介面以參考數字6〇,6 2指示。 ^現請參考圖4Α,4Β及4C,其爲圖3中客户可定製部份 的簡化説明,包含—記憶體晶胞的客户可定製部份及一客 户可定製解碼器部份。圖3的電路包含額外客户可定製部 份’其爲圖4Α — 4C中所沒説明者,熟習本技術者可由下文 中的説明加以實現者。 圖4Α示記憶體區塊5〇部份,且圖48及4()示對應的χ解 碼器5 2,5 4 〇 現請參考圖4Α,記憶體區塊部份包含多個相同的客户 可定製RAM晶胞70,各晶胞包含一對反相器72,74,一位 元線電晶體7 6,及一BT丨N線電晶體7 8,記憶體區塊部份亦 包含選擇線80’ 81,及位元及BITN線82,83,其與RAM相 連通。 依較本發明的較佳實施例,接地連結84,85位在電晶 體7 6的連結8 6,至反相器7 2的輸入,電晶體7 8之連結8 8, 及至反相器74的輸入。這些客户可定製接地連結使ram晶 胞70可由客户製造入R〇M中。 本紙張尺度適用中國國家標準(CNS &gt; A4規格(21〇Χ297公釐) (請先閱讀背面之注意事項再填寫本頁)Device 〃. The above patent application is also a reference for this article. The size and size of the memory block 10, the unit cell in the array 2 and the input / output unit cell 14 may be any suitable number and size. Please refer now to FIG. 2, which is a customizable RAM device according to the architecture and operation of the preferred embodiment of the present invention. Preferably, the device of FIG. 2 includes a customizable β-block memory block 20, which is similar to the block block of the embodiment of FIG. A pair of customizable decoders cc 2 4 for the memory-related pair and printed by the Consumer Cooperative of the Central Sample Bureau of the Ministry of Economic Affairs. Customized decoders 26, 28 can be customized for clients. Round out 1 The interface 3 4, 3 6 can be customized by the opposite customer and a pair of input cell groups 30, 32 are coupled to the corresponding gamma decoders 26, 28. It should be noted that the unit cell groups 30, 32 are alternate and are part of the interface 34, 36. The input unit cell group 40, 42 is coupled to the corresponding decoder 22, 24. According to a preferred embodiment of the present invention, as described in more detail below, the device of FIG. 2 provides different styles and sizes of memory, such as' called _; annual port R / the size of the paper is suitable for China's national sample rate (〇 ^ &gt; Bashi ^ (210 ~ 297mm) ~ Central Government Bureau of the Ministry of Economic Affairs printed by the Consumer Cooperative A7 B7 V. Invention description (10), or multiple ROMs, and one or more single or multi-port RAM or The combination of the above components. Please refer to Figure 3, which is a simplified diagram of the customer-customizable memory portion of the device of Figure 1 or Figure 2. From the figure, it can be seen that when the input / round-out cell is eliminated, then Figure 3 The phone is the same as in Figure 2. In Figure 3, the memory area is indicated by reference number 50, the χ decoder is indicated by the corresponding reference number 52, 54 'and the y decoder is indicated by the corresponding reference number 56, 58 and the customer can The customized interface is indicated by the reference numbers 6〇, 6 2. ^ Please refer to FIGS. 4A, 4B and 4C now, which is a simplified illustration of the customer-customizable part in FIG. 3, including-the memory cell of the customer can be customized Part and a customer can customize the decoder. The circuit in Figure 3 includes additional customer-customizable parts It is not illustrated in FIGS. 4A-4C, and those skilled in the art can implement it by the following description. FIG. 4A shows the memory block 50, and FIGS. 48 and 4 () show the corresponding χ decoders. 5 2, 5 4 〇 Now please refer to FIG. 4A, the memory block part includes a plurality of identical customer-customizable RAM cells 70, each cell includes a pair of inverters 72, 74, one bit line power Crystal 76, and a BT-N line transistor 78, the memory block part also includes a selection line 80 '81, and bit and BITN lines 82, 83, which are connected to the RAM. According to the invention In the preferred embodiment, the ground connection 84, 85 is at the connection 8 6 of the transistor 76, the input to the inverter 72, the connection 88 to the transistor 78, and the input to the inverter 74. These customers can The customized ground connection allows the ram cell 70 to be manufactured by the customer into the R〇M. This paper size is applicable to the Chinese National Standard (CNS &gt; A4 specification (21〇Χ297mm) (Please read the precautions on the back before filling this page )

VV

12- 經濟部中央標準局員工消費合作杜印製 A7 ______ B7__ 五、發明説明(11) 更依據本發明的較佳實施例,相對地提供客户可定製 連結9 0,9 2以連結相鄰晶胞7 〇的對應接點8 6及8 8,在此以 參考數字94,96指示。當提供雙埠口 RAM連結90,92相接 觸,當提供當埠口 RAM或RUM時,相切開開。 另外,依據本發明的較佳實施例,對應的客户可定製 連結98及100沿著字元選擇線80及81提供。相對的亦沿著 連結各對相鄰晶胞94及各對相鄰晶胞96的BIT及BIT線82, 83 提供連結 102,1〇3,104,105。 客户可定製連結98-105可決定RAM或ROM的尺寸。當這 些連結原封不動時將不同的晶胞與多晶胞r0M或RAM互連結 Ο 據本發明的較佳實施例,在記憶體區塊5 〇外側,且 沿著與相對的X解碼器22及24之8C70的陣列之兩端之字元 選擇線80,81提供客户可定製連結1〇7及1〇8。當兩者均原 封不會或一或兩者被切開時,其形成—單埠口 R〇M,— RAh 或一雙埠口 RAM。 現請參考圖4B,其示客户可定製X解碼器52之部份。 多個位址線。在所示的實施例中,提供兩個預先編碼的位 址線’總共有四個解碼器位址輸入112,標示爲a〇l,AU ,A0L及A1R,及四個線部份,以參考數字114,116, 118 ,1 20表之。 在各解碼器位址輸入112處,一非反相位址線部份直 接延伸,且提供多個空間相隔的客户可定製連結122。在 各解碼器位址輸入112處’提供一反相器〗24,其下游延伸 本紙張尺度適用中國國家橾準(CNS ) A4规格(21〇ϋ97公釐) ' ----- (請先閲讀背面之注意事項再填寫本頁) -衣. 訂 13- 經濟部中央標準局員工消費合作社印製 A7 B7 i、發明説明(】2) 反相之位址線部份,以位址線部份亦提供多個相隔的客 户可定製連結彳2 2。 v本發明的特性爲在左及右解碼器位址輸入I”處提供 反相對稱,使得各—給定左解碼器位址112的非反相位址 線部份亦構成一給定右解碼器位址輸入112的反相位址線 部份,反之亦然。同樣地,一给定解碼器位址輸入112的 各反相位址線部份亦構成一給定右解碼器位址輸入112的 不反相位址線部份。 至多個AND閘之輸入,基本上有四個號碼,以參考數 字1 3 0 , 1 3 2 , ! 34及136指示,其與位址線部份之不同對相 連結。基本上六叩閘13〇與位址線部份116及120相連結, AND閘132基本上與位址線部份116,118相連結:基本上, AND閘134與位址線部份114及12〇相連結,且基本上,and 閘1 3 6與位址線部份1 1 4及1 1 8相連結。 AND 閘 130-136 的埠口 標示爲 W〇M,W1M,W2M,W3M,且 提供予四個記憶體晶胞70的對應對之字元選擇線8〇,81, 如圖4A中所示者。 本發明的特徵爲,圖4B的解碼器可爲在客户可定製達 結122處的雷射切除,蝕刻或客户可定製金屬沉積而形成 客户可定製之形態。因此構成一或二個解碼器,由於上述 不對稱特性,其可由零往上數。如果產生兩個解碼器,則 各解碼器均含一及三個埠口 AND閘〇 現在請參考圖4C,其示X解碼器54。可看到X解碼器。 基本上與X解碼器52相同(見圖4B),且元素之標示亦相 本紙張尺度適用中國國家標準(CNS ) A4規格(2丨OX297公釐) I--------------ir------1 (請先閱讀背面之注意事項再填寫本頁) A7 A7 經濟部中央標準局員工消費合作杜印製 五、發明説明(/ 同0唯一的不同處爲位址輸入標示ΑΟΤ,A1T,AOB,A1B&gt;3 輪出AND間在此標示爲WON,W1N,W2N,W3N。 如圖4A所不,AND閘WON,W1N,W2N及W3N的輸出提供 予四個對應之記憶體晶胞7 0對的字元選擇線8 0,8 1。 現在請參考阖5A,5B,其共同形成對應圖4 A之較佳付 局。圖5A粗略對等於圖4A部份,其示一記憶體晶胞陣列部 份。擴散層以參考數字20 0指示,多晶矽層以參考數字2〇 指不。金屬1層以參考數字20 4指示,且金屬1 VSS線以參 考數字20 5指示。接點以參考數字2()6指示,且穿口 1S以參 考數字208指示。客户可定製連結之一般位置以參考數字 2 1 0指示。 在請參考圖5B,其爲在圖5A結構上形成之客户可定 製第二及第三金屬佈局的簡化圖,包含在記憶體晶胞之主 動區上形成的客户可定製連結。金屬2層以參考數字21 2指 不,且金屬3層以參考數字2 14指示。金屬3 VDD線以參考 數字215指示。穿口 1S以參考數字216指示,穿口 2s以參考 數字21 8指示。客户可定製連結的一般位置以參考數字22 指不,與圖4中相同的連哼在圖5中以同—參考數字指示。 現在請參考圖6Α及6Β,其示對應圖48或4()之電路的輕 佳饰局,其中圖6 Α爲上至第一金屬層的非客户可定製cM〇: 結構的佈局,且包含第一金屬層;且圖δΒ爲圖^中所示福 構上形成的客户可定製第二及第三金屬層之佈局,其包告 客户可定製連結。 在圖6Α中,參考數字25〇指示擴散層,參考數字252指 本紙張尺度逋用中關家標準(CNS ) ( 21GX297公釐) ----------衣------訂------^ (請先閲讀背面之注意事項再填寫本頁) 15- 指 30Q307 五、發明説明(14 . 示多晶梦層。參者勃$ 數字254指示金屬1層。參考數字 示接點,且參考數虫。 敢字258爲穿口。參考數字260指示客卢 定製連結之一般位置。 尸巧 在圖6Β中,象去私^ 令考數字262指示金屬2層,參考數字 示金屬3層。參老紅 *考數字264指示金屬3 VDD,且參考數字 165指示金屬3 VS&lt;i〇 a &amp; bS 參考數字2 6 6指示穿口 1S,參考數字 268指示穿口 2S〇表去奴山 ^ 參考數字27 0指示客户可定製連結之—般 位置在圖4A— 4C中的特定連結,在囷6B中以相同的數字 表示。 現在請參考圖7A,7B及7G,其爲相對的的圖4A,4B及 4C ’客户可定製部份的簡化圖爲一客户可定製部份,係由 雷射切除,蝕刻,或客户可定製金屬沉積以產生一 4字元 2位元的單埠口 ram。 從圖7A中可看到’在各相鄰晶胞對之連結300,302, 3 0 4,3 0 6 ’ 3 0 8,3 1 〇 , 3 1 2 , 3 1 4 及 3 1 6 被切開。沿位元線 82’ 83的額外連結32〇,322,324,326亦被切開。 在圖7B及7C中,連結330,332,334,336被切開,須 知圖7C中的解碼器爲不必要者,其輸入含—固定値。圖7B 之解碼,器構成用於圖7A之實施例的X解碼器。 d在請參考圖8 ,其示圖5B之佈置,其後爲一客户可 定製部份,係由雷射切除,蝕刻,或客户可定製金屬沉積 以產生4字元X 2位元單埠口 RAM之記憶體部份。切開線 由圖7A之同一參考數字表示。 現在請參考圖9A及9B,其示圖6B之佈局,爲一客户可 本紙張尺度適用中國國家標準(CNS ) μ規格(210X297公釐) * 16- ^^^1-1 ί —a— m m II H4. t 7 J (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央榡準局員工消費合作杜印製 經濟部中央標準局員工消費合作社印製 五、發明説明(is) 定製料,係由雷射切除,蚀刻,或客户可定製金屬沉彩 以產生4字元X 2位元單埠口線之解碼器部份。 圖9A示對應圖78之電路的解碼器。切開連結由圖 同一參考數字指示。 圖9B示對應圖7C之電路之冗餘解碼器。切開連結33〇 ,332, 334及336之參考數字同於圖7(;者。切開連結314, 31 6之參考數字同於圖7a的參考數字。 現在請參考圖10A, 10B及10C,其爲相對的的4A,4B ,4C中,爲一客户可定製部份,係由雷射切除,蝕刻 客户可定製金屬沉積以產生2字元χ 2位元單埠口 ram。 從圖10A中可看到,在各相鄰晶胞對中的連結35〇, 3 5 2 ’ 3 5 4 ’ 3 5 6 ’ 3 5 8,3 6 0,3 6 2,3 6 4 及 3 6 6 被切開。沿石 兀線8 2,8 3的其他連結3 8 〇 , 3 8 2,3 8 4及3 8 6亦被切開,g 分開相鄰RAM晶胞對7 8,而形成分開的ram。 在圖10B,1〇c中,連結390, 392, 394,及396被切留 。須知圖10C的解碼器爲不必要者,其輸入含一固定値。 圖10B的解碼器構成用於圓ι〇Α之實施例的雙χ解碼器。 現在請參考圖11,其.中示圖5B之佈局,其後爲一客户 可定製部份,係由雷射切除,蝕刻,或客户可定製金屬识 積以產生兩個2字元χ2位元單埠口 RAM之記憶體部份。 切開連結的參考數字同於圖1〇切開連結的參考數字。 現在請參考圖12A,12B,其示圖6之佈局,其後爲一 客户可定製部份,係由雷射切除,蝕刻,或客户可定製金 屬沉積以產生兩個2字元X2位元單埠口 RAM之解碼器部 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ----------衣------1T------1 (請先閲讀背面之注意事項再填寫本頁) 17- 經濟部中央標準局肩工消費合作社印製 A7 -____B7 ^ __ 五、發明説明(16) 份0 圖12A示對應圖10B之電路的解碼器。切開連結的參y 數字同於圖1 0B。 圖12B示對應圖10C中電路的冗餘解碼器。切開連結 390’ 392’ 394及396的參考數字同於圖1〇c。切開連結36 ,366的參考數字同於圖1〇A。12- Printed A7 ______ B7__ by employees ’consumption cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (11) According to the preferred embodiment of the present invention, customers can provide customized links 9 0, 9 2 to connect adjacent ones The corresponding contacts 8 6 and 8 8 of the unit cell 70 are indicated by reference numerals 94, 96 here. When providing dual port RAM connection 90, 92 contact, when providing port RAM or RUM, the phase cut open. In addition, according to the preferred embodiment of the present invention, corresponding customer-customizable links 98 and 100 are provided along character selection lines 80 and 81. The opposite also provides connections 102, 103, 104, 105 along the BIT and BIT lines 82, 83 connecting each pair of adjacent unit cells 94 and each pair of adjacent unit cells 96. Customers can customize the link 98-105 to determine the size of RAM or ROM. When these links are left intact, different cells are interconnected with the polycell r0M or RAM. According to a preferred embodiment of the present invention, outside the memory block 50, and along the opposite X decoder 22 and The character selection lines 80, 81 at both ends of the array of 24-8C70 provide customers with customizable connections 107 and 108. When both are intact or one or both are cut open, they form-port port R〇M,-RAh or a dual port RAM. Now please refer to FIG. 4B, which shows that the customer can customize the part of the X decoder 52. Multiple address lines. In the illustrated embodiment, two pre-coded address lines are provided. There are a total of four decoder address inputs 112, labeled a〇l, AU, A0L, and A1R, and four line portions, for reference. The numbers 114, 116, 118, and 1 20 represent it. At each decoder address input 112, a non-inverted phase line portion extends directly and provides multiple customer-specific links 122 that are spaced apart. At the input 112 of each decoder address, 'provide an inverter〗 24, the downstream extension of this paper standard is applicable to the Chinese National Standard (CNS) A4 specification (21〇ϋ97mm)' ----- (please first Read the precautions on the back and then fill out this page) -Clothing. Order 13- A7 B7 printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs i. Invention description (】 2) Inverted part of the address line. Copies also provide multiple, customizable links 2 2 apart from customers. v The feature of the invention is to provide inverse symmetry at the left and right decoder address input I ", so that the non-inverted phase line portion of each given left decoder address 112 also constitutes a given right decoding The inverted phase address line portion of the decoder address input 112, and vice versa. Similarly, each inverted phase address line portion of a given decoder address input 112 also constitutes a given right decoder address input The non-inverted phase of the address line part 112. The input to multiple AND gates basically has four numbers, indicated by the reference numbers 1 3 0, 1 3 2,! 34 and 136, which are part of the address line part Different pairs are connected. Basically, the six knock gates 13 are connected to the address line sections 116 and 120, and the AND gate 132 is basically connected to the address line sections 116, 118: basically, the AND gate 134 is connected to the address The line parts 114 and 120 are connected, and basically, and gates 1 3 6 are connected to the address line parts 1 1 4 and 1 1 8. The ports of the AND gates 130-136 are marked as W〇M, W1M , W2M, W3M, and the corresponding pair of zigzag selection lines 80, 81 provided to the four memory cells 70, as shown in FIG. 4A. The present invention is characterized by the decoder of FIG. 4B For laser ablation at the customer-customizable junction 122, etching or customer-customizable metal deposition to form a customer-customizable morphology. Therefore, one or two decoders are formed. Count up. If two decoders are generated, each decoder includes one and three ports AND gate. Now please refer to FIG. 4C, which shows the X decoder 54. You can see the X decoder. The decoder 52 is the same (see Figure 4B), and the labeling of the elements is also in accordance with the paper standard. The Chinese National Standard (CNS) A4 specification (2 丨 OX297mm) I -------------- ir ------ 1 (Please read the precautions on the back before filling in this page) A7 A7 Printed by the Consumer Standards Department of the Ministry of Economic Affairs of the People's Republic of China. 5. Description of the invention (/ The only difference with 0 is the address input label ΑΟΤ, A1T, AOB, A1B> 3 rounds AND is marked here as WON, W1N, W2N, W3N. As shown in Figure 4A, the output of the AND gate WON, W1N, W2N and W3N is provided to the four corresponding memories The cell 70 has a pair of character selection lines 8 0, 8 1. Now please refer to 5A, 5B, which together form a better payoff corresponding to FIG. 4A. 5A is roughly equal to the part of FIG. 4A, which shows a memory cell array part. The diffusion layer is indicated by reference numeral 200, and the polysilicon layer is indicated by reference numeral 20. The metal 1 layer is indicated by reference numeral 204, and The metal 1 VSS line is indicated by reference number 20 5. The contact point is indicated by reference number 2 () 6, and the opening 1S is indicated by reference number 208. The general position of the customer's customizable connection is indicated by reference number 2 1 0. Please refer to FIG. 5B, which is a simplified diagram of customer-customizable second and third metal layouts formed on the structure of FIG. 5A, including customer-customizable links formed on the active area of the memory cell. The metal 2 layer is indicated by the reference number 21 2 and the metal 3 layer is indicated by the reference number 2 14. The metal 3 VDD line is indicated with reference number 215. Piercing 1S is indicated by reference numeral 216, and penetrating 2s is indicated by reference numeral 218. The general location of the link that the customer can customize is indicated by the reference number 22, and the same link as in Figure 4 is indicated by the same reference number in Figure 5. Now please refer to FIGS. 6A and 6B, which show a light and good decoration corresponding to the circuit of FIG. 48 or 4 (), wherein FIG. 6A is a non-customizable cM〇: structure layout up to the first metal layer, and Contains the first metal layer; and FIG. ΔB is the layout of the second and third metal layers that can be customized by the customer formed on the structure shown in FIG. ^, Which includes that the customer can customize the connection. In FIG. 6Α, the reference numeral 25〇 indicates the diffusion layer, and the reference numeral 252 refers to the Zhongguanjia Standard (CNS) (21GX297mm) for the paper size ---------- clothing ----- -Subscribe ------ ^ (Please read the precautions on the back before filling in this page) 15- Refers to 30Q307 V. Description of the invention (14. Shows polycrystalline dream layer. Participant Bo $ 254 indicates 1 layer of metal. The reference number shows the contact, and the number of worms. The dare word 258 is the mouth. The reference number 260 indicates the general location of the custom connection of Kelu. The figure in Figure 6B, like deprivation ^ Let the test number 262 indicate the metal 2 layer , The reference number shows 3 layers of metal. Sen Laohong * test number 264 indicates metal 3 VDD, and reference number 165 indicates metal 3 VS &lt; i〇a &amp; bS Reference number 2 6 6 indicates the opening 1S, reference number 268 indicates the wear口 2S〇 表 去 奴 山 ^ Reference number 27 0 indicates that the customer can customize the specific location of the link in Figures 4A-4C, which is represented by the same number in Figure 6B. Now please refer to Figures 7A, 7B and 7G, which is relative to Figures 4A, 4B and 4C. The simplified diagram of the customer-customizable part is a customer-customizable part, which is cut by the laser , Etching, or customers can customize metal deposition to produce a 4-character 2-bit ram port. From Figure 7A, you can see the 'connection 300, 302, 3 0 4 between each adjacent cell pair, 3 0 6 '3 0 8, 3 1 〇, 3 1 2, 3 1 4 and 3 1 6 are cut. The extra links 32 〇, 322, 324, 326 along the bit line 82' 83 are also cut. In 7B and 7C, the connections 330, 332, 334, and 336 are cut. It should be noted that the decoder in FIG. 7C is unnecessary, and its input includes a fixed value. The decoder in FIG. 7B is configured for the embodiment of FIG. 7A. X decoder. D Please refer to Figure 8, which shows the arrangement of Figure 5B, followed by a customer-customizable part, which is laser-cut, etched, or customer-customizable metal deposition to produce 4-character X The memory part of the 2-bit port RAM. The cut line is indicated by the same reference number in Figure 7A. Now please refer to Figures 9A and 9B, the layout of which is shown in Figure 6B, as a customer can apply this paper standard to the Chinese national standard (CNS) μ specifications (210X297mm) * 16- ^^^ 1-1 ί —a— mm II H4. T 7 J (Please read the precautions on the back before filling in this page) Printed by the quasi-bureau's employee consumer cooperation. Printed by the Ministry of Economic Affairs Central Standards Bureau employee consumer cooperative. V. Invention description (is) Customized material, which is cut off by laser, etched, or customers can customize the metal sink color to produce 4 characters Unit X 2-bit decoder part of the port line. Figure 9A shows the decoder corresponding to the circuit of Figure 78. The cut link is indicated by the same reference number in the figure. FIG. 9B shows a redundant decoder corresponding to the circuit of FIG. 7C. The reference numbers of the cut links 33, 332, 334, and 336 are the same as those in FIG. 7 (; those. The reference numbers of the cut links 314, 31, 6 are the same as those in FIG. 7a. Now please refer to FIGS. 10A, 10B, and 10C, which are The relative 4A, 4B, 4C is a customer-customizable part, which is cut by laser, and the customer-customizable metal deposition is etched to produce 2 characters x 2 bits of ram. From Figure 10A It can be seen that the connection 35〇 in each adjacent unit cell pair, 3 5 2 '3 5 4' 3 5 6 '3 5 8, 3 6 0, 3 6 2, 3 6 4 and 3 6 6 are cut Other connections 3 8 〇, 3 8 2, 3 8 4 and 3 8 6 along the Shiwu line 8 2, 8 3 are also cut, g separating the adjacent RAM unit cell pair 7 8 to form a separate ram. In Fig. 10B, 10c, the connections 390, 392, 394, and 396 are cut off. It should be noted that the decoder of Fig. 10C is unnecessary, and its input contains a fixed value. The decoder of Fig. 10B is constructed for use in a circle. The dual x decoder of the embodiment of Α. Now please refer to FIG. 11, which shows the layout of FIG. 5B, followed by a customer-customizable part, which is laser-cut, etched, or customer-customizable metal Learn the product to produce two 2 words χ2 bits of the memory portion of the port RAM. The reference numbers for the cut link are the same as the reference numbers for the cut link in Figure 10. Now please refer to Figures 12A and 12B, which shows the layout of Figure 6, followed by a customer The customized part is laser cut, etched, or the customer can customize the metal deposition to produce two 2-character X2-bit decoders of the port RAM. The paper size is applicable to China National Standard (CNS) A4 specifications (210X297mm) ---------- clothing ----- 1T ------ 1 (please read the precautions on the back before filling in this page) 17- Central Bureau of Standards, Ministry of Economic Affairs Printed by Shoulder Consumer Cooperative A7 -____ B7 ^ __ V. Description of the invention (16) copies 0 Figure 12A shows the decoder corresponding to the circuit of Figure 10B. The cut-out connection parameters are the same as Figure 1 0B. Figure 12B shows the corresponding Figure 10C The redundant decoder of the middle circuit. The reference numbers of the cut connections 390'392 '394 and 396 are the same as in Figure 10c. The reference numbers of the cut connections 36 and 366 are the same as in Figure 10A.

現在請參考圖13A,13B及13G,其爲相對的圖4A,4B 及4G之簡化示意圖,爲一客户可定製部份,係由雷射切除 ’蚀刻,或客户可定製金屬沉積以產生兩個2字元X 1位 元雙埠口 RAM。 從圖13A中可看出,在各相鄰晶胞對中的連結4〇〇, 402’ 404’ 406,408,410,412 及 414 被切開。沿位元線 82及83中的額外連結被切開,以分開相鄰RAM晶胞對7〇, 而形成分開的RAM。 J圖13B’ 13C中,連結440,442,444被切開,各解 碼器的功能如同兩個分開的解碼器。 現在請參考圖14,其示圖5B之佈局,其後爲一客户可 定製部份,係、由雷射切除,蝕刻’或客户可定製金屬沉積 以產生兩個2字元χ1位元雙埠口 _之記憶體部份。切 開連結之參考數字同於圖13A者。 現在請參考圖15A及15B,其示圖6B之佈局,其後爲一 客户可定製部份,係由雷射切除,蝕刻, 气各尸可定製金 屬沉積以產生用於兩個2字元χ彳位元雙埠口_之解碼器 。含圖6Β之形態的兩解碼器亦加以使用,各解碼器的—部 本紙張尺度適用t賴家標準(210&gt;&lt;297公瘦)---——___ -18- -本— (請先閲讀背面之注意事項再填寫本頁) 訂 ,^ A7 A7 經濟部中央標準局員工消費合作杜印製 -----—__B7 五、發明説明(17) 份與兩雙埠口 RAM之各部份共用。 圖15A對應圖13B之電路的解碼器。切開連結44〇, 442’ 444’及444的參考數字與圖ι3Β相同。切開連結412 的參考數字同於圖13A。 圖15B示對應圖13C之電路的解碼器。切開連結440, 42’ 444及446的參考數字同於圖i3c。切開連結414的參考 數字同於圖13A。 在請參考圖16A,16B及16C,其爲相對的的圖4A, 4Β及4C的簡化圖,控制兩個2字元X 2位元ROM。 從圖16A中可看出在各對相鄰晶胞中的連結45〇,Now please refer to FIGS. 13A, 13B and 13G, which are simplified schematic diagrams of the relative FIGS. 4A, 4B and 4G. It is a customer-customizable part, which is laser ablation 'etching or customer-customizable metal deposition to produce Two 2-character X 1-bit dual-port RAM. As can be seen from Fig. 13A, the links 400, 402 ', 404', 406, 408, 410, 412, and 414 in each adjacent unit cell pair are cut. The additional links along bit lines 82 and 83 are cut to separate adjacent pairs 70 of RAM cells to form separate RAMs. In Figs. 13B 'to 13C, the links 440, 442, and 444 are cut, and each decoder functions like two separate decoders. Now refer to FIG. 14, which shows the layout of FIG. 5B, followed by a customer-customizable part, which is laser-cut, etched, or customer-customizable metal deposition to produce two 2-character χ1 bits The memory part of Shuangbukou_. The reference numbers for the broken links are the same as those in Figure 13A. Now please refer to FIGS. 15A and 15B, which shows the layout of FIG. 6B, followed by a customer-customizable part, which is laser cut and etched, and each metal body can be customized for metal deposition to produce two 2 words The decoder of the dual port of yuan x bit. Two decoders with the form shown in Fig. 6B are also used. The paper standard of each decoder is applicable to the Laijia standard (210 &gt; &lt; 297 male thin) -------___ -18- -this- (please Read the precautions on the back before filling out this page). Order, ^ A7 A7 Du Printed by the Consumer Cooperation Cooperation of the Central Standards Bureau of the Ministry of Economic Affairs -----__ B7 V. Invention Instructions (17) Each of the two dual-port RAM Partly shared. Figure 15A corresponds to the decoder of the circuit of Figure 13B. The reference numbers of the cut links 44, 442 ', 444' and 444 are the same as in Fig. 3B. The reference numbers for the cut link 412 are the same as in FIG. 13A. Fig. 15B shows a decoder corresponding to the circuit of Fig. 13C. The reference numbers of the cut links 440, 42 '444 and 446 are the same as in Figure i3c. The reference numbers for the cut link 414 are the same as in Fig. 13A. Please refer to FIGS. 16A, 16B, and 16C, which are relative simplified diagrams of FIGS. 4A, 4B, and 4C, and control two 2-character X 2-bit ROMs. It can be seen from FIG. 16A that the links 45〇 in each pair of adjacent unit cells,

452,454,456,458,460及462被切開。另外沿位元線8J 及84之連結480,482,484及486亦被切開,以分開相鄰 RAM晶胞對70,而形成分開的R〇M。 在圖16B及16串,連結490,492,494及496被切開, 須知圖16C的解碼器爲不必要者,其輸入含一固定値。圖 16B的解碼器構成用於圖之實施例的兩個X解碼器。 現在請參考圖17,其示圖5 B之佈局,其後爲—客户可 定製部份’係由雷射切除·,蚀刻,或客户可定製金屬沉積 以產生兩個2字元X 2位元ROM之記憶體部份。切開連結 的參考數字與圖16中的參考數字相同。 現在請參考圖18A及18B,其示圖6B之佈局,其後爲_ 客户可定製部份,係由雷射切除,蝕刻,或宏 价尸°』定製金 屬沉積以產生兩個2字元X 2位元ROM之解碼器部份 圖18A示對應圖16B之電路的解碼器。切開連择的參考 ( CNS ) ΑΛ^Μ- ( 210X297^ ) ~ ^~~~ --------- ~ 19- ------------^ π-- (請先閲讀背面之注$項再填寫本頁) 、·ιτ 經濟部中央橾準局員X消費合作杜印製 Α7 Β7 五、發明説明(18 ) 數字同於圖16B。 圖18A示一對應圖16G之電路的冗餘解碼器。切開連結 490,492,494及496的參考數字同於圖16〇。切開連結 460,462的參考數字同於圖16A。 \^在請參考圖19A,19B及·19C,其爲相對的之圖4A, 4B及4C的簡化圖’爲一客户可定製部份,係由雷射切除, 蝕刻,或客户可定製金屬沉積以產生一 2字元X 2位元單 埠口 RAM及一 2字元X 2位元的r0M。 由圖19中可知在各相鄰晶胞對中的連結55〇,552, 554, 556, 558, 560, 562, 564, 566在RAM晶胞對569及 570中被切開’其共同形成2字元X 2位元單璋口 RAM,且 在各相鄰晶胞對中的連結552,554,556,562,564及55£ 在RAM晶胞對571及572中被切開,其共同形成2字元X2位 元ROM。另外沿位元線82,83中的連結580,582,584亦被 切開爲分開的相鄰RAM晶胞對70,以分開的記憶體。 在圖19B及19C中,連結590,592,594及596被切開, 須知圖19C的解碼器爲不必要者,其輸入被固定。圖^“的 解碼器構成用於圖19A之實施的兩個X解碼器。 在請參考圖20’其示圖5b之佈局,其後爲一客户可 定製部份,係由雷射切除,蝕刻,或客户可定製金屬沉積 以產生一 2字元X 2位元之單埠口 RAM之記憶體部份,及_ : 字元Χ2位元之ROM。切開連結的參考數字同於圖19Α。 現在清參考圖21Α及21Β,其示圖6Β之佈局,其後爲— 客户可定製部份,係由雷射切除,蝕刻,或客户可定製 (請先閲讀背面之注$項再填寫本頁) .1Τ 20· 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(19) 屬沉積以產生一 2字元X 2位元單埠口 RAM之解碼器部份 及一 2字元X 2位元ROM ° 圖12A示對應圖19B之電路的解碼器,切開連結的參考 數字同於圖1 9B ° 圓21B示對應圖19C之電路的冗餘解碼器。切開連結 590,592,594及596的參考數字同於圖19C。切開連結56 及566的參考數字同於圖19A。 現在請參考圖22A’ 22B及22C,其爲相對的之圖4A, 4B及4C的簡化圖,爲一客户可定製部份,係由雷射切除, 蝕刻,或客户可定製金屬沉積以產生一 2字元X 1位元R〇丨 ,一 2字元X 1位元單埠口 RAM,及一 2字元X2位元單埠口 RAM 〇 W從圖 22A 中可看出,連結 6〇〇,602,604,606,608, 610,612,614及615在RAM晶胞對626及627中被切開,且 連結 616,617,618,619,620,621,622,623 及 624 在 RAM晶胞對628及629中被切開。另外,沿著位元線82及83 的連結630’ 632,634及636亦被切開而分開相鄰ram晶胞 對7 0,以形成分開的記憶,體。 在圖22B及22C中連結640,642,644及646被切開,圖 22B的解碼器功能如兩分開的解碼器,而圖22C的解碼器揭 供一單一解碼器648,及一冗餘解碼器649,其輸入固定。 現在請參考圖23,其示圖5B之佈局,其後爲一客户可 定製部份,係由雷射切除,蝕刻,或客户可定製金屬沉稍 以產生一 2字元X 1位元線之記憶體部份,一 2字元X 1 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 訂 -21- A7 B7 300307 五、發明説明(20 ) 位元單埠口 RAM,及一 2字元X 2位元單埠口 RAM 〇該切W 連結之參考數字與圖22A同。 現在請參考圓24A,24B,其示圖6B之佈局,其後爲一 客户可定製部份,係由雷射切除,蝕刻,或客户可定製金 屬沉積以產生用於_2字元χ工位元R〇M之解碼器,一 2字 元父1位元單埠口 RAM,及—2字元X2位元單埠口 RAM。偵 用兩如圖6B之形態的解碼器。_解碼器的兩部份與2字亓 X 2位元單4 口 RAM共用,且另_解碼器的一部份用於R〇 。另-解碼器的另部份爲不必要者,其輸入已被固定。 圖24A示對應圖22B之電路的解碼器。切開連結δ4〇, 42, Μ4及6 4 6的參考數字同於圖22Β者。切開連結614與雇 22中所用者相同。 β24Β示對應囷22C之電路的解碼器。切開6“,⑷, 644, 6則於圖22C中用者。切開連結615,⑴及川與握 22A相同。 須知對於嫻熟本技術者並不限於上&amp;特定實施例q 發明的觀點係爲下列申請專利範圍所限制。 (請先閲讀背面之注意事項再填寫本頁) 訂 r 經濟.部中央標準局員工消費合作杜印製 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 22-452, 454, 456, 458, 460 and 462 were cut. In addition, the connections 480, 482, 484 and 486 along the bit lines 8J and 84 are also cut to separate the adjacent RAM unit cell pair 70 to form a separate ROM. In Figs. 16B and 16 strings, the connections 490, 492, 494 and 496 are cut. It should be noted that the decoder of Fig. 16C is unnecessary, and its input contains a fixed value. The decoder of FIG. 16B constitutes two X decoders for the embodiment of the figure. Now refer to FIG. 17, which shows the layout of FIG. 5 B, followed by-the customer-customizable part is cut by laser, etching, or the customer can customize metal deposition to produce two 2-characters X 2 The memory part of the bit ROM. The reference number of the cut link is the same as the reference number in FIG. Now please refer to FIGS. 18A and 18B, which shows the layout of FIG. 6B, followed by _customizable parts, which are laser cut, etched, or macro corpse ° custom metal deposition to produce two 2 words Decoder part of cell X 2-bit ROM FIG. 18A shows a decoder corresponding to the circuit of FIG. 16B. The reference for splitting and selecting (CNS) ΑΛ ^ Μ- (210X297 ^) ~ ^ ~~~ --------- ~ 19- ------------ ^ π-- ( Please read the note $ item on the back and then fill out this page), · ιτ Central Ministry of Economic Affairs Bureau X consumer cooperation du printing Α7 Β7 5. Invention description (18) The numbers are the same as in Figure 16B. FIG. 18A shows a redundant decoder corresponding to the circuit of FIG. 16G. The reference numbers of the cut links 490, 492, 494 and 496 are the same as in Figure 16. The reference numbers of the cut links 460, 462 are the same as in Fig. 16A. \ ^ Please refer to Figures 19A, 19B and · 19C, which are relative to Figures 4A, 4B and 4C simplified diagram 'is a customer-customizable part, which is laser cut, etched, or customer-customizable The metal is deposited to produce a 2-character X 2-bit port RAM and a 2-character X 2-bit r0M. It can be seen from FIG. 19 that the links 55〇, 552, 554, 556, 558, 560, 562, 564, and 566 in each adjacent cell pair are cut in the RAM cell pairs 569 and 570. Yuan X 2-bit single-port RAM, and the links 552, 554, 556, 562, 564, and 55 in each adjacent unit cell pair are cut in the RAM unit cell pairs 571 and 572, which together form the 2 character Meta X2 bit ROM. In addition, the links 580, 582, 584 along the bit lines 82, 83 are also cut into separate adjacent RAM cell pairs 70 to separate the memory. In FIGS. 19B and 19C, links 590, 592, 594, and 596 are cut. It should be noted that the decoder of FIG. 19C is unnecessary, and its input is fixed. The decoder in Figure ^ "constitutes two X decoders used in the implementation of Figure 19A. Please refer to Figure 20 'for the layout of Figure 5b, followed by a customizable part, which is cut by the laser, Etching, or customers can customize metal deposition to produce a 2-character X 2-bit memory port RAM, and _: character Χ2-bit ROM. The reference numbers for the cut link are the same as in Figure 19Α Now refer to Figures 21A and 21B, which shows the layout of Figure 6B, followed by-customer-customizable part, which is laser-cut, etched, or customer-customizable (please read the note $ item on the back before (Fill in this page) .1Τ 20 · A7 B7 printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Description of invention (19) It belongs to the decoder part and one that is deposited to produce a 2-character X 2-bit RAM in the port 2-character X 2-bit ROM ° Figure 12A shows the decoder corresponding to the circuit of Figure 19B, the reference numbers for the cut-out link are the same as in Figure 19B ° Circle 21B shows the redundant decoder corresponding to the circuit of Figure 19C. Cut the link 590, The reference numbers for 592, 594 and 596 are the same as in Figure 19C. The reference numbers for the cut links 56 and 566 are the same as in Figure 19A. Now please Refer to Figures 22A ', 22B and 22C, which are the relative simplified figures of Figures 4A, 4B and 4C. It is a customer-customizable part, which is laser cut, etched, or customer-customizable metal deposition to produce a 2-character X 1-bit R〇 丨, 2-character X 1-bit port RAM, and 2-character X 2-bit port RAM. As can be seen from FIG. 22A, link 60. , 602, 604, 606, 608, 610, 612, 614 and 615 were cut in the RAM cell pair 626 and 627, and connected 616, 617, 618, 619, 620, 621, 622, 623 and 624 in the RAM crystal The cell pairs 628 and 629 are cut apart. In addition, the connection 630 '632, 634 and 636 along the bit lines 82 and 83 are also cut apart to separate the adjacent ram cell pair 70 to form a separate memory and body. In FIGS. 22B and 22C, connections 640, 642, 644, and 646 are cut. The decoder of FIG. 22B functions as two separate decoders, and the decoder of FIG. 22C provides a single decoder 648 and a redundant decoder. 649, its input is fixed. Now please refer to FIG. 23, which shows the layout of FIG. 5B, followed by a customer-customizable part, which is laser-cut, etched, or customer-customizable gold Shen Xiao to generate a 2-character X 1-bit line memory portion, a 2-character X 1 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the notes on the back first (Fill in this page again) Ding-21- A7 B7 300307 V. Description of the invention (20) Bit-bit port RAM, and a 2-character X 2-bit bit port RAM. The reference number of the link and Figure 22A with. Now please refer to the circle 24A, 24B, which shows the layout of FIG. 6B, followed by a customer-customizable part, which is laser cut, etched, or customer-customizable metal deposition to produce _2 characters χ The decoder of station R〇M, a 2-character parent 1 bit port RAM, and-2 characters X2 bit port RAM. Detect two decoders of the form shown in Figure 6B. _Two parts of the decoder are shared with 2-word X 2 bit single 4-port RAM, and another part of the decoder is used for R〇. Another-the other part of the decoder is unnecessary, and its input has been fixed. Fig. 24A shows a decoder corresponding to the circuit of Fig. 22B. The reference numbers of the cut links δ4〇, 42, M4 and 6 4 6 are the same as those in FIG. 22B. The cut link 614 is the same as the one used in employment 22. β24B shows a decoder corresponding to the circuit of 22C. Cut 6 ", ⑷, and 64 6 are used in FIG. 22C. Cut link 615, (1) and Chuan 22A are the same. It should be noted that those skilled in the art are not limited to the above &amp; specific embodiment. The scope of the patent application is limited. (Please read the precautions on the back before filling out this page) Order r Economy. Ministry of Central Standards Bureau employee consumption cooperation Du printed this paper standard is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) twenty two-

Claims (1)

A8 B8 C8 D8 經濟部中央標準局員工消費合作社印製 六、申請專利範圍 1 I V - 種 客 户 可 定 製 閘 極 陣 列 裝 置 9 包 含 * 1 I 一客 户 可 定 製 閘 極 陣 列 部 份 * 及 1 I 一客 户 可 定 製 記 憶 aA 體 部 份 〇 1 I 請 1 1 々.一 種 客 户 可 定 製 記 憶 體 裝 置 9 包 含 先 閱 1 I 讀 1 多個 相 同 的 記 憶 體 晶 胞 及 背 面 1 1 之 1 客户 可 定 製 記 憶 體 晶 胞 連 結 使 該 多 個 相 同 記 憶 體 晶 注 意 1 I 胞 致能, 使 其 功 能 可 加 以 選 擇 而 如 同 .— 或 多 個 記 憶 體 單 元 事 項 1 | 填 〇 寫 本 I (如 中 請 專 利 範 圍 第 2 項 之 客 户 可 定 製 記 憶 體 裝 置 9 頁 1 1 其 中該一 或 多 個 記 憶 體 單 元 包 含 多 個 相 同 形 式 的 記 憶 體 單 1 1 元 〇 1 1 &gt;4/如 中 請 專 利 範 圍 第 2 項 之 客 户 可 定 製 記 憶 體 裝 置 9 1 訂 1 其 中該一 或 多 個 記 憶 體 單 元 包 含 多 個 不 同 形 式 的 記 憶 體 單 1 1 I 元 〇 1 1 如 中 請 專 利 範 圍 第 2 項 之 客 户 可 定 製 記 憶 體 裝 置 9 1 1 其 中該一 或 多 個 記 憶 體 單 元 包 含 多 個 相 同 尺 寸 的 記 憶 體 單 I 元 0 1 I y如 中 請 專 利 範 圍 第 2 項 之 客 户 可 定 製 記 憶 體 裝 置 9 1 1 I 其 中該一 或 多 個 記 憶 體 單 元 包 含 多 個 不 同 尺 寸 的 記 憶 體 單 1 1 元 〇 1 1 種 客 户 可 定 製 記 憶 體 裝 置 包 含 1 1 多個 相 同 的 記 憶 體 晶 胞 及 1 | 客户 可 定 製 記 憶 體 晶 胞 連 結 9 使 該 多 個 相 同 記 憶 體 晶 1 1 I 胞 致能, 使 其 功 能 可 加 以 選 擇 而 如 同 一 RAM或- -ROM 〇 1 1 1 本紙張尺度適用中國國家標準(CNS ) Μ規格(210X297公釐〉 23- 經濟部中央標隼局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 ^ 一種客户可定製記憶體裝置包含: 多個相同的記憶體晶胞;及 客户可定製記憶體晶胞連結,使該多個相同記憶體晶 胞致能,使其功能可經由多個數目可選擇的埠口加以致動 〇 I.如申請專利範圍第8項之客户可定製記憶體裝置包 含: 客户可定製記憶體晶胞連結,使該多個相同記憶體晶 胞致能’使其功能可加以選擇而如同一 RAM或一 ROM。 t/.如申請專利範圍第1項之客户可定製閘極陣列裝置 ,其中該客户可定製記憶體切開包含: 多個相同的記憶體晶胞;及 客户可定製記憶體晶胞連結,使該多個相同記憶體晶 胞致能,使其功能可加以選擇而如同一 RAM或一 ROM。 'UK .如申請專利範圍第1項之客户可定製閘極陣列裝 置,其中該客户可定製記憶體切開包含: 多個相同的記憶體晶胞;及 客户可定製記憶體晶,胞連結,使該多個相同記憶體晶 胞致能,使其功能可經由多個數目可選擇的埠口加以致 動0 .如申請專利範圍第1 1項之記憶體閘極陣列裝置, 亦包含: 客户可定製記憶體晶胞連結*使該多個相同記憶體晶 胞致能,使其功能可加以選擇而如同一 RAM或一 ROM。 本紙張尺度適用中國國家標準(CNS ) Α4規格(21〇&gt;&lt;297公釐) (請先閱讀背面之注意事項再填寫本頁) 、1T 24- 經濟部中央標準局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 t 如申請專利範圍第1項之裝置,其中該客户可定製 記憶體部份包含: 一上至第一金屬層的非客户可定製CMOS結構,其亦包 含該第一金屬層;及 在該第一金屬層上形成的客户可定製之至少第二及第 三金屬層。 如申請專利範圍第7項之裝置,其中該客户可定製 記憶體部份包含: 一上至第一金屬層的非客户可定製CMOS結構,其亦包 含該第一金屬層;及 在該第一金屬層上形成的客户可定製之至少第二及第 三金屬層。 Θ如申請專利範圍第8之裝置,其中該客户可定製 記憶體部份包含: 一上至第一金屬層的非客户可定製CMOS結構,其亦包 含該第一金屬層;及 在該第一金屬層上形成的客户可定製之至少第二及第 三金屬層。 〇.如申請專利範圍第13項之裝置,其中該客户可定 製之至少第二及第三金屬層包含在該記憶體晶胞上形成的 客户可定製連結。 1^.·如申請專利範圍第1 4項之裝置,其中該客户可定 製之至少第二及第三金屬層包含在該記憶體晶胞上形成的 客户可定製連結。 本紙張尺度適用中國國家標準(CNS〉A4说格(210X297公釐〉 ---------^--- (請先閲讀背面之注意事項再填寫本頁) 訂 25- 經濟部中央標準局員工消費合作社印製 A8 Βδ . C8 D8 六、申請專利範圍 如申請專利範固第15項之裝置,其中該客户可定 製之至少第二及第三金屬層包含在該記憶體晶胞上形成的 客户可定製連結。 如申請專利範固第13項之裝置,其中該客户可定 製之至少第二及第三金屬層包含在該記憶體晶胞的主動區 上形成的客户可定製連結。 如申請專利範固第1項之裝置,其中該客户可定製 記憶體部份爲客户可定製之雷射。 如申請專利範圍第1項之裝置,其中該客户可定製 閘極部份及該客户可定製記憶體部份皆可由客户應用相同 技術製造。 如申請專利範圍第21項之裝置,其中該客户可定 製閘極部份及該客户可定製記憶體部份兩者均爲客户可定 製造之雷射。 如申請專利範圍第1項之裝置,其中該客户可定製 記憶體部份可爲客户應用該客户可定製連結之蝕刻製造。 如申請專利範圍第1項之裝置,其中該客户可定製 閘極陣列部份及該客户可定製記憶體部份兩者均由客户應 用該客户可定製連結製造。 如申請專利範圍第13項之裝置,其中該客户可定 製之至少第二及第三金屬層包含提供選擇連結的客户訂定 形態之金屬層。 .如申睛專利範固第1項之裝置,其中該客户可定製 記憶體部份至少二個提供選擇連結的客户訂定形態之金屬 本紙張尺度逋用中國國家標準(CNS ) A4規格(2丨〇&gt;&lt;297公釐) &quot; ~ / η - (請先閲讀背面之注意事項再填寫本頁) -訂 A8 B8 C8 D8 六、申請專利範圍 層0 如申請專利範圍第1項之裝置,其中該客户可定製 閘極陣列部份及該客户可定製記憶體部份均包含至少兩個 提供選擇連結之客户可定形態的金屬層。 Vi.如申請專利範園第1項之裝置,其中該客户可定製 記憶體包含至少一個客户可定製的解碼器。 制.如申請專利範圍第1項之裝置,其中該客户可定製 記憶體包括至少一個客户可定製資料介面。 从.如申請專利範圍第28項之裝置,其中該至少一客 户可定製解碼器含兩位址埠口,且可分成兩獨立操作的解 碼器部份,各解碼器部份從0開始計數,且與兩位址部份 中的一部份相關。 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS〉A4規格(210X297公釐) 27-A8 B8 C8 D8 Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 6. Patent application scope 1 IV-Customer-customizable gate array device 9 Contains * 1 I-Customer-customizable gate array part * and 1 I A customer can customize the memory aA body part 〇1 I please 1 1 々. A customer-customizable memory device 9 includes first reading 1 I reading 1 multiple same memory cells and back 1 1 1 customer Customize the memory cell connection to enable the multiple identical memory cells to enable 1 I cell, so that its function can be selected as if. — Or multiple memory cell matters 1 | Fill in the Script I (if a patent is requested in this case) Scope item 2 of the customer can customize the memory device Page 9 1 1 where the one or more memory units contain multiple A single memory bank of the same form 1 1 yuan 〇1 1 &gt; 4 / as stated in the patent scope of the second item of the customer can customize the memory device 9 1 order 1 where the one or more memory units contain multiple different Memory card in the form of 1 1 I yuan 〇 1 1 As claimed in the patent scope of the second item, the customer can customize the memory device 9 1 1 where the one or more memory units include multiple memory cells of the same size I Yuan 0 1 I y as requested by the customer in item 2 of the patent scope to customize the memory device 9 1 1 I where the one or more memory units include multiple memory units of different sizes 1 1 Yuan 〇 1 1 The customer-customizable memory device includes 1 1 multiple identical memory cells and 1 | The customer-customizable memory unit 9 connects the multiple identical memories 1 1 I cell enable, so that its function can be selected like the same RAM or -ROM 〇1 1 1 This paper standard is applicable to China National Standards (CNS) Μ specification (210X297 mm) 23- Central Bureau of Standards and Economics, Ministry of Economic Affairs Printed by staff consumer cooperatives A8 B8 C8 D8 6. Patent application scope ^ A customer-customizable memory device includes: multiple identical memory cells; and customer-customizable memory cells are connected to make the multiple identical The memory cell is enabled so that its function can be actuated through a number of selectable ports. For example, the customer-customizable memory device of patent application item 8 includes: The customer can customize the memory crystal The cell connection enables the same memory cells to enable their functions to be selected like the same RAM or a ROM. t /. The customer-specific gate array device as claimed in item 1 of the patent scope, wherein the customer-specific memory cut includes: multiple identical memory cells; and the customer-customizable memory cell connection To enable the multiple identical memory cells to enable their functions to be selected like the same RAM or a ROM. 'UK. For example, if the customer applies for the first item of the patent scope, the customer can customize the gate array device, wherein the customer can customize the memory cut including: multiple identical memory cells; and the customer can customize the memory cells, cells Linking to enable the multiple identical memory cells to enable their functions to be activated through multiple selectable ports. For example, the memory gate array device of patent application item 11 also includes : Customers can customize the memory cell connection * to enable the multiple same memory cells to enable their functions to be selected like the same RAM or a ROM. This paper scale is applicable to China National Standard (CNS) Α4 specification (21〇 &lt; 297mm) (please read the precautions on the back before filling this page), 1T 24-printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A8 B8 C8 D8 6. Scope of patent application t For the device of patent application item 1, where the customer-customizable memory section includes: a non-customer-customizable CMOS structure up to the first metal layer, which also Including the first metal layer; and at least second and third metal layers customizable on the first metal layer. For example, in the device of claim 7, the customer-customizable memory section includes: a non-customer-customizable CMOS structure up to the first metal layer, which also includes the first metal layer; and At least the second and third metal layers customizable by the customer formed on the first metal layer. Θ The device as claimed in patent scope No. 8, where the customer-customizable memory portion includes: a non-customer-customizable CMOS structure up to the first metal layer, which also includes the first metal layer; and At least the second and third metal layers customizable by the customer formed on the first metal layer. 〇. The device as claimed in item 13 wherein the customer-customizable at least second and third metal layers include customer-customizable links formed on the memory cell. 1 ^ .. The device as claimed in item 14 of the patent application, wherein at least the second and third metal layers customizable by the customer include customer-customizable links formed on the memory cell. The size of this paper is applicable to the Chinese National Standard (CNS> A4 Said (210X297mm) --------- ^ --- (please read the precautions on the back before filling out this page) Order 25- Central Ministry of Economic Affairs A8 Βδ. C8 D8 is printed by the Consumer Cooperative of the Bureau of Standards. 6. The scope of patent application is the device of patent application item 15, in which at least the second and third metal layers customizable by the customer are included in the memory cell The customer-formed link formed on the device can be customized. For example, the device of patent application item 13 in which the customer-customizable at least second and third metal layers are included on the active area of the memory cell can be customized Custom link. For example, the device of patent application item 1 in which the customer can customize the memory part is a laser that the customer can customize. For the device of patent application item 1, in which the customer can customize The gate part and the customer-customizable memory part can be manufactured by the customer using the same technology. For example, in the device of patent application item 21, the customer-customizable gate part and the customer-customizable memory Both are available to customers Manufactured lasers. For example, the device in the patent application scope item 1, where the customer-customizable memory part can be manufactured by the customer using the customer-customizable connection etching. For the patent-application scope item 1, which The customer-customizable gate array part and the customer-customizable memory part are both manufactured by the customer using the customer-customizable link. For example, if the device of patent application item 13 is included, the customer can customize At least the second and third metal layers include a metal layer of a customer-defined form that provides a selective connection. For example, the device of item 1 of Shenyan Patent Fangu, where the customer can customize at least two of the memory parts to provide options The linked customer-defined form of metal-based paper uses the Chinese National Standard (CNS) A4 specification (2 丨 〇 &lt; 297mm) &quot; ~ / η-(Please read the precautions on the back before filling in this Page)-Order A8 B8 C8 D8 6. Patent application layer 0 If the device of patent application item 1, wherein the customer-customizable gate array part and the customer-customizable memory part both contain at least two Pc The optional metal layer of the customer can be shaped. Vi. For example, the device of patent application No. 1 in which the customer-customizable memory contains at least one customer-customizable decoder. The device of item 1, wherein the customer-customizable memory includes at least one customer-customizable data interface. From the device of claim 28, wherein the at least one customer-customizable decoder includes two addresses Port, and can be divided into two independently operated decoder parts, each decoder part starts counting from 0, and is related to a part of the two-bit address part. (Please read the precautions on the back before filling in this Page) The paper standard printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs conforms to the Chinese National Standard (CNS> A4 Specification (210X297mm) 27-
TW085107129A 1996-01-16 1996-06-14 Customizable integrated circuit device TW300307B (en)

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IL11679296A IL116792A (en) 1996-01-16 1996-01-16 Customizable integrated circuit device
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