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Priority to TW85103537ApriorityCriticalpatent/TW291596B/en
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Publication of TW291596BpublicationCriticalpatent/TW291596B/en
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
(AREA)
Semiconductor Integrated Circuits
(AREA)
Insulated Gate Type Field-Effect Transistor
(AREA)
Abstract
A metal oxide transistor structure with parallel diffusion path in electrostatic discharge protection circuit comprises of: (1) one n well formed in one silicon substrate; (2) one first drain diffusion region formed in the well; (3) one source diffusion region formed in the silicon substrate; (4) one second drain diffusion formed in the silicon substrate and the well; (5) one gate formed on the silicon substrate; (6) one first field oxide distributed at least in the second drain diffusion region, used to improve electrostatic discharge current uniformity.
TW85103537A1996-03-251996-03-25Metal oxide transistor structure with parallel diffusion path in electrostatic discharge protection circuit
TW291596B
(en)