TW288204B - - Google Patents
Info
- Publication number
- TW288204B TW288204B TW083109442A TW83109442A TW288204B TW 288204 B TW288204 B TW 288204B TW 083109442 A TW083109442 A TW 083109442A TW 83109442 A TW83109442 A TW 83109442A TW 288204 B TW288204 B TW 288204B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/40—ROM only having the source region and drain region on different levels, e.g. vertical channel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16427893A | 1993-12-09 | 1993-12-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW288204B true TW288204B (en:Method) | 1996-10-11 |
Family
ID=22593770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083109442A TW288204B (en:Method) | 1993-12-09 | 1994-10-12 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0657893A3 (en:Method) |
| JP (1) | JPH07202137A (en:Method) |
| KR (1) | KR950021687A (en:Method) |
| CA (1) | CA2117933A1 (en:Method) |
| TW (1) | TW288204B (en:Method) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5869373A (en) * | 1997-03-27 | 1999-02-09 | United Microelectronics Corp. | Nand-structured and amorphous silicon based read-only memory device and method of fabricating the same |
| JP2001275283A (ja) * | 2000-03-28 | 2001-10-05 | Mitsubishi Electric Corp | 車両用交流発電機の固定子 |
| DE10348954B3 (de) * | 2003-10-18 | 2005-01-05 | Clariant Gmbh | Verfahren zur Herstellung von Beschichtungsformulierungen für wasser- und ölabweisende Beschichtungen |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56150859A (en) * | 1980-04-25 | 1981-11-21 | Hitachi Ltd | Semiconductor rom device |
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1994
- 1994-10-12 CA CA002117933A patent/CA2117933A1/en not_active Abandoned
- 1994-10-12 TW TW083109442A patent/TW288204B/zh active
- 1994-11-30 EP EP94308848A patent/EP0657893A3/en not_active Withdrawn
- 1994-12-08 KR KR1019940033214A patent/KR950021687A/ko not_active Withdrawn
- 1994-12-09 JP JP6331012A patent/JPH07202137A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07202137A (ja) | 1995-08-04 |
| EP0657893A2 (en) | 1995-06-14 |
| EP0657893A3 (en) | 1995-11-22 |
| CA2117933A1 (en) | 1995-06-10 |
| KR950021687A (ko) | 1995-07-26 |