Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW84111248ApriorityCriticalpatent/TW285767B/en
Application grantedgrantedCritical
Publication of TW285767BpublicationCriticalpatent/TW285767B/en
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
(AREA)
Abstract
An upright electrostatic discharge protection component which includes; 1. A first type semiconductor base; 2. An isolation apparatus set on the base and defined an active area on the base; 3. A gate pile layer set on the base inside the active area, and there are several grooves set on one side of the gate pile layer; 4. A pair of second type source/drain area set on the base of two sides of the gate pile layer, and one of the second type source/drain area will cover the perimeter of the grooves.