TW285763B - - Google Patents
Info
- Publication number
- TW285763B TW285763B TW84100059A TW84100059A TW285763B TW 285763 B TW285763 B TW 285763B TW 84100059 A TW84100059 A TW 84100059A TW 84100059 A TW84100059 A TW 84100059A TW 285763 B TW285763 B TW 285763B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30504694A JP3384896B2 (en) | 1994-12-08 | 1994-12-08 | Semiconductor device and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW285763B true TW285763B (en) | 1996-09-11 |
Family
ID=17940466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW84100059A TW285763B (en) | 1994-12-08 | 1995-01-06 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3384896B2 (en) |
| TW (1) | TW285763B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633007A (en) * | 2012-08-17 | 2014-03-12 | 上海华虹宏力半导体制造有限公司 | Method for preventing electric leakage of shallow groove isolation edge silicon contact hole |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3941133B2 (en) | 1996-07-18 | 2007-07-04 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
| KR100236067B1 (en) * | 1996-09-02 | 1999-12-15 | 김영환 | Method for manufacturing semiconductor memory device |
| JP2000058782A (en) | 1998-08-06 | 2000-02-25 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| JP2000077520A (en) | 1998-08-28 | 2000-03-14 | Fujitsu Ltd | Manufacture of semiconductor device |
| KR100451759B1 (en) * | 1998-11-10 | 2004-11-16 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
| JP3205306B2 (en) | 1998-12-08 | 2001-09-04 | 松下電器産業株式会社 | Semiconductor device and method of manufacturing the same |
| JP4602818B2 (en) * | 2005-03-30 | 2010-12-22 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
| JP5003743B2 (en) * | 2009-10-20 | 2012-08-15 | 富士通セミコンダクター株式会社 | Semiconductor device and manufacturing method thereof |
-
1994
- 1994-12-08 JP JP30504694A patent/JP3384896B2/en not_active Expired - Fee Related
-
1995
- 1995-01-06 TW TW84100059A patent/TW285763B/zh active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633007A (en) * | 2012-08-17 | 2014-03-12 | 上海华虹宏力半导体制造有限公司 | Method for preventing electric leakage of shallow groove isolation edge silicon contact hole |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08162635A (en) | 1996-06-21 |
| JP3384896B2 (en) | 2003-03-10 |