TW284903B - The method for using PSG as dielectric to promote etching-back planarization - Google Patents

The method for using PSG as dielectric to promote etching-back planarization

Info

Publication number
TW284903B
TW284903B TW85100959A TW85100959A TW284903B TW 284903 B TW284903 B TW 284903B TW 85100959 A TW85100959 A TW 85100959A TW 85100959 A TW85100959 A TW 85100959A TW 284903 B TW284903 B TW 284903B
Authority
TW
Taiwan
Prior art keywords
psg
etching
dielectric
sog
promote
Prior art date
Application number
TW85100959A
Other languages
Chinese (zh)
Inventor
Jenn-Hwa Yu
Yuan-Chang Hwang
Shiun-Ming Jang
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to TW85100959A priority Critical patent/TW284903B/en
Application granted granted Critical
Publication of TW284903B publication Critical patent/TW284903B/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A method for using PSG as dielectric to promote etching-backplanarization, include: - Cover PSG on top of wafer with semiconductor element & isolating layer; - Cover SOG; - Proceed selective etching-back to SOG & PSG; With good etching selectivity between PSG & SOG and releasing O2 during etching to promote etching planarization.
TW85100959A 1996-01-26 1996-01-26 The method for using PSG as dielectric to promote etching-back planarization TW284903B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW85100959A TW284903B (en) 1996-01-26 1996-01-26 The method for using PSG as dielectric to promote etching-back planarization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW85100959A TW284903B (en) 1996-01-26 1996-01-26 The method for using PSG as dielectric to promote etching-back planarization

Publications (1)

Publication Number Publication Date
TW284903B true TW284903B (en) 1996-09-01

Family

ID=51397883

Family Applications (1)

Application Number Title Priority Date Filing Date
TW85100959A TW284903B (en) 1996-01-26 1996-01-26 The method for using PSG as dielectric to promote etching-back planarization

Country Status (1)

Country Link
TW (1) TW284903B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI660404B (en) * 2018-04-03 2019-05-21 華邦電子股份有限公司 Methods of forming semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI660404B (en) * 2018-04-03 2019-05-21 華邦電子股份有限公司 Methods of forming semiconductor devices

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